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IXFH24N90P
Power MOSFET, N Channel, 900 V, 24 A, 0.42 ohm, TO-247, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:900V; On Resistance Rds(on):0.42ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power D
- MSL: -
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 660W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-247
- Drain Source Voltage Vds: 900V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 24A
- Drain Source On State Resistance: 0.42ohm
- Gate Source Threshold Voltage Max: 3.5V
| Delivery and price | |
|---|---|
| Units per pack | 300 |
| Price | 8.42 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
Preliminary Technical Information ## **Polar[TM ] Power MOSFET** ## **HiPerFET[TM]** N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ## **IXFH24N90P IXFT24N90P** **V = 900V DSS** **I = 24A D25 R ≤ 420m Ω DS(on) t ≤ 300ns rr** **TO-247 (IXFH)** **==> picture [519 x 336] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||||| |---|---|---|---|---|---|---|---| |Symbol|Test Conditions|Maximum Ratings| |VDSS|TJ|= 25°C to 150°C|900|V| |Oe|VDGR|TJ|= 25°C to 150°C, RGS = 1MΩ|900|V|TAB| |VGSS|Continuous|± 30|V| |VGSM|Transient|± 40|V| |ID25|TC|= 25°C|24|A|TO-268 (IXFT)| |IDM|TC|= 25°C, pulse width limited by TJM|48|A| |IA|TC|= 25°C|12|A| |EAS|TC|= 25°C|1|J|G|S|TAB| |Co|dV/dt|IS|≤ IDM, VDD|≤ VDSS, TJ|≤ 150°C|15|V/ns| |PD|TC|= 25°C|660|W|G = Gate|D = Drain| |TJ|-55 ... +150|°C|S = Source|TAB = Drain| |TJM|150|°C| |Tstg|-55 ... +150|°C|Features| |TL|Maximum lead temperature for soldering|300|°C|International standard packages| |TSOLD|Plastic body for 10s|260|°C|Avalanche RatedLow package inductance| |Md|Mounting torque (TO-247)|1.13/10|Nm/lb.in.|Fast intrinsic diode| |Weight|TO-247|6|g|Advantages| |TO-268|4 g| **----- End of picture text -----**<br> Easy to mount Space savings High power density **==> picture [351 x 133] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||| |---|---|---|---|---|---| |Symbol|Test Conditions Characteristic Values| |(TJ = 25°C, unless otherwise specified)|Min. Typ. Max.| |BVDSS|VGS|= 0V, ID = 1mA|900|V| |=| |VGS(th)|VDS|= VGS, ID = 1mA|3.5|6.5|V| |||| |IGSS|VGS|= ± 30V, VDS = 0V|± 200|nA| |IDSS|VDS|= VDSS|25|μA| |VGS|= 0V|TJ = 125°C|2 mA|oe| |RDS(on)|VGS|= 10V, ID = 0.5 • ID25, Note 1|420|mΩ| **----- End of picture text -----**<br> ## **Applications:** Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor drives Robotics and servo controls DS100059(10/08) © 2008 IXYS CORPORATION, All rights reserved **IXFH24N90P IXFT24N90P** |**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C unless otherwise specified)**Min. Typ. Max.**<br>**gfs**<br>VDS = 20V, ID= 0.5 • ID25, Note 1<br>10 16<br>S<br>**RGi**<br>Gate input resistance<br>1.1<br>Ω<br>**Ciss**<br>7200<br>pF<br>**Coss**<br>VGS = 0V, VDS= 25V, f = 1MHz<br>490<br>pF<br>**Crss**<br>60<br>pF<br>**td(on)**<br>46<br>ns<br>**tr**<br>**Resistive Switching Times**40 ns<br>**td(off)**<br>VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>68<br>ns<br>**tf**<br>RG<br>= 2Ω(External)<br>38<br>ns<br>**Qg(on)**<br>130<br>nC<br>**Qgs**<br>VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>50<br>nC<br>**Qgd**<br>58<br>nC<br>**RthJC**<br>0.19 °C/W<br>**RthCS**<br>(TO-247)<br>0.25<br>°C/W<br>**Source-Drain Diode**<br>**Characteristic Values**<br> <br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C unless otherwise specified)**Min. Typ. Max.**<br>**gfs**<br>VDS = 20V, ID= 0.5 • ID25, Note 1<br>10 16<br>S<br>**RGi**<br>Gate input resistance<br>1.1<br>Ω<br>**Ciss**<br>7200<br>pF<br>**Coss**<br>VGS = 0V, VDS= 25V, f = 1MHz<br>490<br>pF<br>**Crss**<br>60<br>pF<br>**td(on)**<br>46<br>ns<br>**tr**<br>**Resistive Switching Times**40 ns<br>**td(off)**<br>VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>68<br>ns<br>**tf**<br>RG<br>= 2Ω(External)<br>38<br>ns<br>**Qg(on)**<br>130<br>nC<br>**Qgs**<br>VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>50<br>nC<br>**Qgd**<br>58<br>nC<br>**RthJC**<br>0.19 °C/W<br>**RthCS**<br>(TO-247)<br>0.25<br>°C/W<br>**Source-Drain Diode**<br>**Characteristic Values**<br> <br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C unless otherwise specified)**Min. Typ. Max.**<br>**gfs**<br>VDS = 20V, ID= 0.5 • ID25, Note 1<br>10 16<br>S<br>**RGi**<br>Gate input resistance<br>1.1<br>Ω<br>**Ciss**<br>7200<br>pF<br>**Coss**<br>VGS = 0V, VDS= 25V, f = 1MHz<br>490<br>pF<br>**Crss**<br>60<br>pF<br>**td(on)**<br>46<br>ns<br>**tr**<br>**Resistive Switching Times**40 ns<br>**td(off)**<br>VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>68<br>ns<br>**tf**<br>RG<br>= 2Ω(External)<br>38<br>ns<br>**Qg(on)**<br>130<br>nC<br>**Qgs**<br>VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>50<br>nC<br>**Qgd**<br>58<br>nC<br>**RthJC**<br>0.19 °C/W<br>**RthCS**<br>(TO-247)<br>0.25<br>°C/W<br>**Source-Drain Diode**<br>**Characteristic Values**<br> <br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C unless otherwise specified)**Min. Typ. Max.**<br>**gfs**<br>VDS = 20V, ID= 0.5 • ID25, Note 1<br>10 16<br>S<br>**RGi**<br>Gate input resistance<br>1.1<br>Ω<br>**Ciss**<br>7200<br>pF<br>**Coss**<br>VGS = 0V, VDS= 25V, f = 1MHz<br>490<br>pF<br>**Crss**<br>60<br>pF<br>**td(on)**<br>46<br>ns<br>**tr**<br>**Resistive Switching Times**40 ns<br>**td(off)**<br>VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>68<br>ns<br>**tf**<br>RG<br>= 2Ω(External)<br>38<br>ns<br>**Qg(on)**<br>130<br>nC<br>**Qgs**<br>VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>50<br>nC<br>**Qgd**<br>58<br>nC<br>**RthJC**<br>0.19 °C/W<br>**RthCS**<br>(TO-247)<br>0.25<br>°C/W<br>**Source-Drain Diode**<br>**Characteristic Values**<br> <br>|Dim.<br>Millimeter<br>Min.<br>Ma<br>A<br>4.7<br>5<br>A1<br>2.2<br>2.5<br>A2<br>2.2<br>2<br>b<br>1.0<br>1<br>b1<br>1.65<br>2.1<br>b2<br>2.87<br>3.1<br>C<br>.4<br><br>D<br>20.80<br>21.4<br>E<br>15.75<br>16.2<br>e<br>5.20<br>5.7<br>L<br>19.81<br>20.3<br>L1<br>4.5<br>∅P<br>3.55<br>3.6<br>Q<br>5.89<br>6.4<br>R<br>4.32<br>5.4<br><br> <br>**TO-247 (IXFH) Out**|Inches<br>x.<br>Min.<br>Max.<br>.3<br>.185<br>.209<br>4<br>.087<br>.102<br>.6<br>.059<br>.098<br>.4<br>.040<br>.055<br>3<br>.065<br>.084<br>2<br>.113<br>.123<br>.8<br>.016<br>.031<br>6<br>.819<br>.845<br>6<br>.610<br>.640<br>2<br>0.205 0.225<br>2<br>.780<br>.800<br>0<br>.177<br>5<br>.140<br>.144<br>0<br>0.232 0.252<br>9<br>.170<br>.216<br> <br> <br>e<br>∅P<br>**line**|| |---|---|---|---|---|---|---| |||||||| |TJ= 25°C unless otherwise specified)**Min.**||**Typ.**|**Max.**<br>24<br>A|S<br>6.15 BS|<br>242 BSC|| |**I**<br>V0V||||||| |**S**<br>GS=||||||| |**ISM**<br>Repetitive, pulse width limited by TJM||||||| |**VSD**<br>IF= IS, VGS= 0V, Note 1||||||| |**trr**<br>**QRM**<br>|<br> <br>IF= 12A, -di/dt = 100A/μs<br>VR= 100V, VGS = 0V|<br>1.1<br>||||| **==> picture [353 x 132] intentionally omitted <==** **----- Start of picture text -----**<br> Source-Drain Diode Characteristic Values<br>TJ = 25°C unless otherwise specified) Min. Typ. Max.<br>IS VGS = 0V 24 A<br>ISM Repetitive, pulse width limited by TJM 96 A<br>VSD IF = IS, VGS = 0V, Note 1 1.5 V<br>tQrrRM IF = 12A, -di/dt = 100A/μs 1.1 300 μnsC<br>IRM VR = 100V, VGS = 0V 11 A<br>**----- End of picture text -----**<br> ## **TO-268 Outline** **==> picture [144 x 289] intentionally omitted <==** Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. ## **PRELIMINARY TECHNICAL INFORMATION** The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 **IXFH24N90P IXFT24N90P** **==> picture [506 x 211] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics<br>@ 25ºC @ 25ºC<br>24 50<br>22 V 9VGS = 10V 45 V 9V GS 9V GS = 10V<br>20<br>40<br>18<br>35<br>16<br>14 8V 30<br>12 25 8V<br>10<br>20<br>8<br>7V 15<br>6<br>10<br>4 7V<br>2 6V 5<br>6V<br>0 0<br>0 1 2 3 4 5 6 7 8 9 10 0 3 6 9 12 15 18 21 24<br>VDS - Volts VDS - VoltsDS - Volts - Volts<br> - Amperes<br>ID - AmperesIDD<br>**----- End of picture text -----**<br> **==> picture [250 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>45 GS = 10V<br>V 9V GS 9V GS<br>40<br>35<br>30<br>25 8V<br>20<br>15<br>10<br>7V<br>5<br>6V<br>0<br>0 3 6 9 12 15 18 21 24 27 30<br>VDS - VoltsDS - Volts - Volts<br>ID - AmperesIDD<br>**----- End of picture text -----**<br> **Fig. 3. Output Characteristics @ 125ºC** **==> picture [251 x 385] intentionally omitted <==** **----- Start of picture text -----**<br> 24<br>22 VGS = 10V<br> 9V<br>20<br>18<br>16 8V<br>14<br>12<br>10 7V<br>8<br>6<br>4 6V<br>2 5V<br>0<br>0 2 4 6 8 10 12 14 16 18 20 22 24<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 12A Value<br>vs. Drain Current<br>2.8<br>2.6 VGS = 10V<br>TJ = 125ºC<br>2.4<br>2.2<br>2.0<br>1.8<br>1.6<br>1.4<br>1.2<br>TJ = 25ºC<br>1.0<br>0.8<br>0 4 8 12 16 20 24 28 32 36 40 44 48<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Fig. 4. RDS(on) Normalized to ID = 12A Value vs. Junction Temperature** **==> picture [252 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 3.2<br>3.0 V GS = 10V<br>2.8<br>2.6<br>2.4<br>2.2 I D = 24A<br>2.0<br>1.8 I D = 12A<br>1.6<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Fig. 6. Maximum Drain Current vs. Case Temperature** **==> picture [251 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 26<br>24<br>22<br>20<br>18<br>16<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> © 2008 IXYS CORPORATION, All rights reserved **IXFH24N90P IXFT24N90P** ## **Fig. 7. Input Admittance** **==> picture [247 x 388] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>25<br>20 T J = 125ºC<br> 25ºC<br> - 40ºC<br>15<br>10<br>5<br>0<br>4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0<br>VGS - Volts<br>Fig. 9. Forward Voltage Drop of<br>Intrinsic Diode<br>80<br>70<br>60<br>50<br>40<br>30<br>T J = 125ºC<br>20<br>T J = 25ºC<br>10<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2<br>VSD - Volts<br> - Amperes<br>ID<br> - Amperes<br>IS<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **==> picture [255 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 100,000<br>f = 1MHz<br>Ciss<br>10,000<br>1,000 Coss<br>100<br>C rss<br>10<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> ## **Fig. 8. Transconductance** **==> picture [246 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>TJ = - 40ºC<br>25<br>25ºC<br>20<br>125ºC<br>15<br>10<br>5<br>0<br>0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br> **Fig. 10. Gate Charge** **==> picture [246 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br> VDS = 450V<br>14<br> I D = 12A<br>12 I G = 10mA<br>10<br>8<br>6<br>4<br>2<br>0<br>0 20 40 60 80 100 120 140 160 180<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br> **Fig. 12. Maximum Transient Thermal Impedance** **==> picture [248 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 1.00<br>0.10<br>0.01<br>0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_24N90P (85)10-23-08 **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
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