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IXFH24N50
Power MOSFET, HiPerFET, N Channel, 500 V, 24 A, 0.23 ohm, TO-247, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.23ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation P
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 300W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-247
- Drain Source Voltage Vds: 500V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 24A
- Drain Source On State Resistance: 0.23ohm
- Gate Source Threshold Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 9.74 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **HiPerFET[TM] Power MOSFETs** **IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50** N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS[TM] Family |**Symbol**|**Test Conditions**|**Test Conditions**||**Maximum Ratings**|**Maximum Ratings**| |---|---|---|---|---|---| |**VDSS**|TJ|= 25°C to 150°C||500|V| |**VDGR**|TJ|= 25°C to 150°C; RGS= 1 MΩ||500|V| |**VGS**|Continuous|||±20|V| |**VGSM**|Transient|||±30|V| |**ID25**|TC|= 25°C|21N50|21|A| ||||24N50|24|A| ||||26N50|26|A| |**IDM**|TC|= 25°C, pulse width limited by TJM|21N50|84|A| ||||24N50<br>26N50|96<br>104|A<br>A| |**IAR**|TC|= 25°C|21N50|21|A| ||||24N50|24|A| ||||26N50|26|A| |**EAR**<br>TC = 25°C<br>30<br>mJ<br>**dv/dt**<br>IS<br>≤IDM, di/dt≤100 A/µs, VDD ≤VDSS,<br>5<br>V/ns<br>co|||||| ||TJ ≤|≤150°C, RG= 2Ω|||| |**PD**|TC|= 25°C||300|W| |**TJ**<br>**TJM**<br>**Tstg**<br>**TL**|1.6 mm (0.062 in.) from case for 10 s|1.6 mm (0.062 in.) from case for 10 s|-55 ... +150<br>150<br>-55 ... +150<br>300||°C<br>°C<br>°C<br>°C| |**Md**|Mounting torque||1.13/10 Nm/lb.in.|1.13/10 Nm/lb.in.|| |**Weight**|||TO-204 = 18 g, TO-247 = 6 g|TO-204 = 18 g, TO-247 = 6 g|| **V I R** DSS D25 DS(on) **500 V 21 A 0.25 Ω 500 V 24 A 0.23 Ω 500 V 26 A 0.20 Ω** **t ≤ 250 ns** rr **==> picture [160 x 237] intentionally omitted <==** **----- Start of picture text -----**<br> TO-247 AD (IXFH)<br>(TAB)<br>TO-268 (D3) Case Style<br>G<br>S<br>(TAB)<br>TO-204 AE (IXFM)<br>G<br>D<br>G = Gate, D = Drain,<br>S = Source, TAB = Drain<br>**----- End of picture text -----**<br> ## **Features** - International standard packages - Low RDS (on) HDMOS[TM] process - Rugged polysilicon gate cell structure - Unclamped Inductive Switching (UIS) rated - Low package inductance - easy to drive and to protect - Fast intrinsic Rectifier ## **Applications** - DC-DC converters - Synchronous rectification **Symbol Test Conditions** ## **Characteristic Values** |||||(TJ= 25°C, unless otherwise specified)|C, unless otherwise specified)<br>**min.**|C, unless otherwise specified)<br>**typ.**<br>**max.**|C, unless otherwise specified)<br>**typ.**<br>**max.**|C, unless otherwise specified)<br>**typ.**<br>**max.**|C, unless otherwise specified)<br>**typ.**<br>**max.**| |---|---|---|---|---|---|---|---|---|---| |**VDSS**|VGS|= 0 V, I|= 0 V, ID= 250µA||500||||V| |**VGS(th)**|VDS|= V|= VGS, ID= 4 mA||2|||4|V| |**IGSS**|VGS|=|=±20 VDC, VDS= 0|||||±100|nA| |**IDSS**|VDS <br>VGS|= 0.8 • V<br> = 0 V|= 0.8 • VDSS<br>= 0 V|TJ= 25°C<br>TJ= 125°C||||200<br>1|µA<br>mA| - Battery chargers - Switched-mode and resonant-mode power supplies - DC choppers - AC motor control - Temperature and lighting controls - Low voltage relays ## **Advantages** - Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) - High power surface mountable package - High power density © 1999 IXYS All rights reserved 91525H (9/99) **IXFH21N50 IXFH24N50 IXFH26N50 IXFM21N50 IXFM24N50 IXFM26N50 IXFT24N50 IXFT26N50** |**Symbol**|**Test Conditions**||**Characteristic Values**<br>|**Characteristic Values**<br>|**Characteristic Values**<br>|**Characteristic Values**<br>|**Characteristic Values**<br>|**TO-247 AD (IXFH) Outline**|**TO-247 AD (IXFH) Outline**|**TO-247 AD (IXFH) Outline**|**TO-247 AD (IXFH) Outline**|**TO-247 AD (IXFH) Outline**||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |(TJ= 25°C,|unless otherwise specified)||**Min.**||**Typ.**|**Max.**||||||||| |**RDS(on)**|VGS = 10 V, ID= 0.5 ID25|21N50<br>24N50||||0.25<br>0.23|Ω<br>Ω|||||||| |||26N50||||0.20|Ω|||||||| ||Pulse test, t≤300µs, duty cycled≤2 %||||||||1 2 3||||Terminals:<br>1 - Gate|| |**gfs**|VDS = 10 V; ID= 0.5 ID25, pulse test||11||21||S||||||2 - Drain<br>3 - Source|| ||||||||||||||Tab -|Drain| |**Ciss**|||||4200||pF|||||||| |**Coss**|VGS = 0 V, VDS= 25 V, f = 1 MHz||||450||pF|||||||| |**Crss**|||||135||pF|||||||| |**td(on)**|||||16|25|ns||Dim.|Millimeter<br>Min.<br>Max.||Inches<br>Min.<br>Max.||| |**tr**|VGS = 10 V, VDS= 0.5 VDSS, ID|= 0.5 ID25|||33|45|ns||A|4.7|5.3|.185|.209|| |**td(off)**|RG = 2Ω(External)||||65|80|ns||A1<br>A2|2.2<br>2.2|2.54<br>2.6|.087<br>.059|.102<br>.098|| |**tf**<br>**Qg(on)**|||||30<br>135|40<br>160|ns<br>nC||b<br>b1<br>b2|1.0<br>1.65<br>2.87|1.4<br>2.13<br>3.12|.040<br>.065<br>.113|.055<br>.084<br>.123|| |**Qgs**<br>**Qgd**|VGS = 10 V, VDS= 0.5 VDSS, ID|= 0.5 ID25|||28<br>62|40<br>85|nC<br>nC||C<br>D<br>E|.4<br>20.80<br>15.75|.8<br>21.46<br>16.26|.016<br>.819<br>.610|.031<br>.845<br>.640|| |**RthJC**||||||0.42|K/W||e<br>L|5.20<br>19.81|5.72<br>20.32|0.205<br>.780|0.225<br>.800|| |**RthCK**|(TO-247 Case Style)||||0.25||K/W||L1||4.50||.177|| ||||||||||∅P|3.55|3.65|.140|.144|| |**Source-Drain Diode**|||**Characteristic Values**||||||Q|5.89|6.40|0.232|0.252|| |||(TJ= 25°C,|unless|otherwise specified)|||||R<br>S|4.32<br>6.15|5.49<br>BSC|.170<br>242|.216<br>BSC|| |**Source-Drain Diode**|**Source-Drain Diode**||**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**| |---|---|---|---|---|---|---| |||(TJ= 25°C,|unless otherwise specified)|||| |**Symbol**|**Test Conditions**||**Min.**|**Typ.**|**Max.**|| |**IS**|VGS = 0 V|21N50|||21|A| |||24N50|||24|A| |||26N50|||26|A| |**ISM**|Repetitive;|21N50|||84|A| ||pulse width limited by TJM|24N50|||96|A| |||26N50|||104|A| |**VSD**|IF= IS, VGS= 0 V,||||1.5|V| ||Pulse test, t≤300µs, duty cycled≤2 %|||||| |**trr**||TJ= 25°C|||250|ns| |**QRM**<br>**IRM**|IF= IS<br>-di/dt = 100 A/µs,<br>VR= 100 V|TJ= 125°C<br>TJ= 25°C<br>TJ= 125°C<br>TJ= 25°C||1<br>2<br>10|400|ns<br>µC<br>µC<br>A| |||TJ= 125°C||15||A| **==> picture [103 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> TO-204 AE (IXFM) Outline<br>**----- End of picture text -----**<br> **==> picture [170 x 250] intentionally omitted <==** **----- Start of picture text -----**<br> Pins: 1 - Gate, 2 - Source, Case - Drain<br>Dim. Millimeter Inches<br>Min. Max. Min. Max.<br>A 6.4 11.4 .250 .450<br>A1 1.53 3.42 .060 .135<br>∅ b 1.45 1.60 .057 .063<br>∅ D 22.22 .875<br>e 10.67 11.17 .420 .440<br>e1 5.21 5.71 .205 .225<br>L 11.18 12.19 .440 .480<br>∅ p 3.84 4.19 .151 .165<br>∅ p1 3.84 4.19 .151 .165<br>q 30.15 BSC 1.187 BSC<br>R 12.58 13.33 .495 .525<br>R1 3.33 4.77 .131 .188<br>s 16.64 17.14 .655 .675<br> Min. Recommended Footprint<br>**----- End of picture text -----**<br> Note 1: Add "S" suffix for TO-247 SMD package option (ex: IXFH24N50S) **==> picture [336 x 161] intentionally omitted <==** **----- Start of picture text -----**<br> TO-268 Outline<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: **==> picture [236 x 16] intentionally omitted <==** **----- Start of picture text -----**<br> 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715<br>4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025<br>**----- End of picture text -----**<br> **IXFH21N50 IXFH24N50 IXFH26N50 IXFM21N50 IXFM24N50 IXFM26N50 IXFT24N50 IXFT26N50** ## Fig. 1 Output Characteristics **==> picture [210 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>45 VGS = 10V<br>7V 6V<br>40<br>35 TJ = 25°C<br>30<br>25<br>20<br>5V<br>15<br>10<br>5<br>0<br>0 5 10 15 20 25 30 35<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> Fig. 3 RDS(on) vs. Drain Current **==> picture [211 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 1.6<br>TJ = 25°C<br>1.5<br>1.4<br>1.3<br>VGS = 10V<br>1.2<br>VGS = 15V<br>1.1<br>1.0<br>0.9<br>0 5 10 15 20 25 30 35 40 45 50<br>ID - Amperes<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> Fig. 5 Drain Current vs. Case Temperature **==> picture [211 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>26N50<br>25<br>24N50<br>20 21N50<br>15<br>10<br>5<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees C<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> ## Fig. 2 Input Admittance **==> picture [220 x 604] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>45<br>40 TJ = 25°C<br>VDS = 10V<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>VGS - Volts<br>Fig. 4 Temperature Dependence<br> of Drain to Source Resistance<br>2.50<br>2.25<br>2.00<br>1.75<br>ID = 12A<br>1.50<br>1.25<br>1.00<br>0.75<br>0.50<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees C<br>Fig. 6 Temperature Dependence of<br>Breakdown and Threshold Voltage<br>1.2<br>V<br>GS(th) BVDSS<br>1.1<br>1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>0.5<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees C<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br> - Normalized<br>G(th)<br>BV/V<br>**----- End of picture text -----**<br> © 1999 IXYS All rights reserved **IXFH21N50 IXFH24N50 IXFH26N50 IXFM21N50 IXFM24N50 IXFM26N50 IXFT24N50 IXFT26N50** ## Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area **==> picture [211 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>9 VDS = 250V<br>8 ID = 12.5A<br>IG = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 25 50 75 100 125 150 175 200<br>Gate Charge - nCoulombs<br> - Volts<br>GE<br>V<br>**----- End of picture text -----**<br> Fig.9 Capacitance Curves **==> picture [235 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>Limited by RDS(on) 10µs<br>100µs<br>10<br>1ms<br>10ms<br>1<br>100ms<br>0.1<br>1 10 100 500<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> Fig.10 Source Current vs. Source to Drain Voltage **==> picture [213 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>45<br>40<br>35<br>30<br>25<br>20<br>TJ = 125°CJ = 125°C= 125°C<br>15<br>TJ = 25°CJ = 25°C= 25°C<br>10<br>5<br>0<br>0.00 0.25 0.50 0.75 1.00 1.25 1.50<br>VSD - VoltSD - Volt - Volt<br> - Amperes<br>IDD<br>**----- End of picture text -----**<br> **==> picture [485 x 383] intentionally omitted <==** **----- Start of picture text -----**<br> 4500<br>Ciss 45<br>4000<br>40<br>3500<br>35<br>3000<br>30<br>f = 1 Mhz<br>2500<br>VDS = 25V 25<br>2000 20<br>TJ = 125°CJ = 125°C= 125°C<br>1500 15<br>TJ = 25°CJ = 25°C= 25°C<br>1000 10<br>Coss<br>500 Crss 5<br>0 0<br>0 5 10 15 20 25 0.00 0.25 0.50 0.75 1.00 1.25 1.50<br>VDS - Volts VSD - VoltSD - Volt - Volt<br>Fig.11 Transient Thermal Impedance<br>1<br>D=0.5<br>0.1<br>D=0.2<br>D=0.1<br>D=0.05<br>0.01 D=0.02<br>D=0.01<br>Single pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Time - Seconds<br> - Amperes<br>IDD<br>Capacitance - pF<br>Thermal Response - K/W<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Updated at April 27, 2026
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