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IXFH22N65X2
Power MOSFET, X2-Class, N Channel, 650 V, 22 A, 0.145 ohm, TO-247, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.145ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Powe
- MSL: MSL 1 - Unlimited
- SVHC: Lead (17-Jan-2023)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: HiPerFET
- Qualification: -
- Power Dissipation: 390W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-247
- Drain Source Voltage Vds: 650V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 22A
- Drain Source On State Resistance: 0.145ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 2.78 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **X2-Class HiPerFET[TM] IXFA22N65X2 Power MOSFET IXFP22N65X2 IXFH22N65X2** N-Channel Enhancement Mode Avalanche Rated |**Symbol**|**Test Conditions**|**Maximum Ratings**|| |---|---|---|---| |**VDSS**<br>**VDGR**<br>**VGSS**|TJ = 25C to 150C<br>TJ = 25C to 150C, RGS= 1M<br>Continuous|650<br>650<br>30|V<br>V<br>V| |**VGSM**<br>Transient<br>40<br>V<br>~~OO~~|||| |**ID25**<br>**IDM**|TC = 25C<br>TC = 25C, Pulse Width Limited by TJM|22<br>44|A<br>A| |**IA**|TC = 25C|5|A| |**EAS**|TC = 25C|1|J| |**dv/dt**I|IS IDM, VDD VDSS, TJ 150°C 50 V/ns|150°C 50 V/ns|150°C 50 V/ns| |**PD**<br>**TJ**|TC = 25C|390<br>-55 ... +150|W<br>C| |**TJM**||150|C| |**Tstg**||-55 ... +150|C| |**TL**|Maximum Lead Temperature for Soldering 300|Maximum Lead Temperature for Soldering 300|°C| |**TSOLD**|1.6 mm (0.062in.) from Case for 10s 260|1.6 mm (0.062in.) from Case for 10s 260|°C| |**FC**|Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb||Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb| |**Md**|Mounting Torque (TO-220 & TO-247)|1.13 / 10 Nm/lb.in|| |**Weight**|TO-263<br>2.5|2.5|g| |TO-220|TO-220<br>3.0|3.0|g| |TO-247|TO-247<br>6.0 g|6.0 g|6.0 g| **V = 650V DSS I = 22A D25 R 145m DS(on)** **==> picture [110 x 231] intentionally omitted <==** **----- Start of picture text -----**<br> TO-263 (IXFA)<br>G<br>S<br>D (Tab)<br>TO-220 (IXFP)<br>G<br>D<br>S<br>D (Tab)<br>TO-247 (IXFH)<br>G<br>D S D (Tab)<br>**----- End of picture text -----**<br> G = Gate D = Drain S = Source Tab = Drain ## **Features** - International Standard Packages - Low RDS(ON) and QG Avalanche Rated Low Package Inductance ## **Advantages** |**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= 250μA<br>650|~~|~~|V| |**VGS(th)**<br>VDS = VGS, ID= 1.5mA<br>3.5 5.0 V|5.0 V<br>~~|~~<br>~~—_~~|5.0 V| |**IGSS**<br>VGS =30V, VDS= 0V<br>|<br>~~—_~~<br>~~—~~|100 nA| |**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125C<br>1.5 mA|10<br>1.5 mA<br>~~—=~~|10A<br>1.5 mA| |**RDS(on)**<br>VGS = 10V, ID= 0.5**•**ID25, Note 1|145 m<br>~~_~~|145 m| - High Power Density - Easy to Mount - Space Savings ## **Applications** - Switch-Mode and Resonant-Mode - Power Supplies DC-DC Converters - PFC Circuits - AC and DC Motor Drives - Robotics and Servo Controls DS100682C(6/18) © 2018 IXYS CORPORATION, All Rights Reserved **IXFA22N65X2 IXFP22N65X2 IXFH22N65X2** |**Symbol**<br>**Test Conditions Characteristic Values**<br>|**Symbol**<br>**Test Conditions Characteristic Values**<br>|**Symbol**<br>**Test Conditions Characteristic Values**<br>| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**| |**gfs**<br>VDS= 10V, ID= 0.5 • ID25, Note 1 8|14|S| |**RGi**<br>Gate Input Resistance<br>|1.0|| |**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|2190<br>1450<br>1.3|pF<br>pF<br>pF| |**Co(er)**<br> <br>**Co(tr)**<br> <br>**Effective Output Capacitance**<br>Energy related<br>Time related<br>VGS= 0V<br>VDS= 0.8 • VDSS|92<br>330|pF<br>pF| |**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 10(External)|30<br>37<br>42<br>18|ns<br>ns<br>ns<br>ns| |**Qg(on)**<br> <br>**Qgs**<br>VGS= 10V, VDS= 0.5**•**VDSS, ID= 0.5**•**ID25<br> <br>**Qgd**<br>|37<br>12<br>14|nC<br>nC<br>nC| |**RthJC**<br> <br>**RthCS**<br>TO-220<br>TO-247|<br>0.50<br>0.21|0.32C/W<br> C/W<br> C/W| ## **Source-Drain Diode** |**Symbol**<br>**Test Conditions Characteristic Values**|**Symbol**<br>**Test Conditions Characteristic Values**|**Symbol**<br>**Test Conditions Characteristic Values**| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**| |**IS**<br>VGS= 0V||22 A| |**ISM**<br>Repetitive, pulse Width Limited by TJM||88 A| |**VSD**<br>IF= IS, VGS= 0V, Note 1||1.4 V| |**trr**<br> <br>**QRM**<br> <br>**IRM**<br> <br>IF= 11A, -di/dt = 100A/μs<br>VR= 100V|145<br>890<br>12|ns<br>nC<br>A| Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 ## **IXFA22N65X2 IXFP22N65X2 IXFH22N65X2** **==> picture [263 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>60<br>VGS = 10V<br>50<br>9V<br>40<br>30 8V<br>20<br>7V<br>10<br>6V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [163 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25 [o] C<br>**----- End of picture text -----**<br> **==> picture [255 x 394] intentionally omitted <==** **----- Start of picture text -----**<br> 20 VGS = 10V<br> 9V<br>8V<br>16<br>12<br>7V<br>8<br>6V<br>4<br>5V<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5<br>VDS - Volts<br>Fig. 3. Output Characteristics @ TJ = 125 [o] C<br>20 VGSGS = 10V 10V<br>8V<br>16<br>7V<br>12<br>6V<br>8<br>4 5V<br>4V<br>0<br>0 1 2 3 4 5 6 7<br>VDS - VoltsDS - Volts - Volts<br> - Amperes<br>ID<br> - Amperes<br>IDD<br>**----- End of picture text -----**<br> **Fig. 4. RDS(on) Normalized to ID = 11A Value vs. Junction Temperature** **==> picture [532 x 400] intentionally omitted <==** **----- Start of picture text -----**<br> 3.8<br>20 VGSGS = 10V 10V<br>3.4 VGS = 10V<br>8V 3.0<br>16<br>7V 2.6 I D = 22A<br>12 2.2<br>1.8<br>6V I D = 11A<br>8<br>1.4<br>1.0<br>4 5V<br>0.6<br>4V<br>0 0.2<br>0 1 2 3 4 5 6 7 -50 -25 0 25 50 75 100 125 150<br>VDS - VoltsDS - Volts - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 11A Value vs. Fig. 6. Normalized Breakdown & Threshold Voltages<br> Drain Current vs. Junction Temperature<br>5.0 1.3<br>4.5 VGS = 10V<br>1.2<br>4.0 T J = 125 [o] C<br>1.1 BV DSS<br>3.5<br>3.0 1.0<br>2.5 TJ = 25 [o] C 0.9<br>2.0<br>0.8<br>VGS(th)<br>1.5<br>0.7<br>1.0<br>0.5 0.6<br>0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>ID - Amperes TJ - Degrees Centigrade<br> - Normalized<br> - Amperes<br>IDD<br>DS(on)<br>R<br> - Normalized<br> - Normalized GS(th)<br>DS(on) / V<br>R DSS<br>BV<br>**----- End of picture text -----**<br> © 2018 IXYS CORPORATION, All Rights Reserved ## **IXFA22N65X2 IXFP22N65X2 IXFH22N65X2** **==> picture [263 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Maxing Drain Current vs. Case Temperature<br>24<br>20<br>16<br>12<br>8<br>4<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **==> picture [263 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 8. Input Admittance<br>20<br>16<br>12 TJ = 125 [o] C<br> 25 [o] C<br> - 40 [o] C<br>8<br>4<br>0<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5<br>VGS - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **==> picture [533 x 428] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode<br>24 70<br>T J = - 40 [o] C<br>60<br>20<br>50<br>16 25 [o] C<br>40<br>125 [o] C<br>12<br>30<br>T J = 125 [o] C<br>8<br>20<br>TJ = 25 [o] C<br>4 10<br>0 0<br>0 2 4 6 8 10 12 14 16 18 20 22 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1<br>I D - Amperes V SD - Volts<br>Fig. 11. Gate Charge Fig. 12. Capacitance<br>10 100000<br> VDS = 325V<br>8 I D = 11A 10000<br> I G = 10mA<br>1000 Ciss<br>6<br>100<br>4 Coss<br>10<br>2<br>1 f = 1 MHz Crss<br>0 0.1<br>0 5 10 15 20 25 30 35 40 1 10 100 1000<br>QG - NanoCoulombs VDS - Volts<br> - Siemens - Amperes<br>f s S<br>g I<br> - Volts<br>GS<br>V<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. ## **IXFA22N65X2 IXFP22N65X2 IXFH22N65X2** **==> picture [534 x 448] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area<br>20 100<br>RDS(on) Limit<br>18<br>25μs<br>16<br>10<br>14<br>100μs<br>12<br>10 1<br>8<br>6 1ms<br>4 0.1 TJ = 150oC<br>10ms<br> TC = 25 [o] C<br>2 Single Pulse<br>0 0.01<br>0 100 200 300 400 500 600 10 100 1,000<br>VDS - Volts VDS - Volts<br>Fig. 15. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1<br>Pulse Width - Second<br> - MicroJoules - Amperes<br>OSS ID<br>E<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_22N65X2(X4-S602) 12-14-15 ## **IXFA22N65X2 IXFP22N65X2 IXFH22N65X2** **==> picture [65 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> TO-263 Outline<br>ein<br>1 - Gate<br>2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br> **==> picture [146 x 390] intentionally omitted <==** **----- Start of picture text -----**<br> TO-220 Outline<br>,<br>pe<br>a 7<br>Pp +o lw oF<br>7<br>o fa<br>(23<br>7 el<br>ul<br>y<br>Fy _ cok ob<br>300<br>1 - Gate<br>2,4 - Drain<br>3 - Source<br>t=<br>TO-247 Outline<br>“4<br>ote p—:—+2) ,<br>740 TWil<br>° | © it [s] 02<br>of Il Wo<br>ei<br>pe ss cont<br>T<br>|<br>> al<br>ck b2 1 - Gate<br>2,4 - Drain<br>¥ a Le] 3 - Source<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
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