IXFH22N60P3

Power MOSFET, N Channel, 600 V, 22 A, 0.39 ohm, TO-247, Through Hole

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Manufacturer: IXYS SEMICONDUCTOR
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.39ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power
MSL: -
SVHC: No SVHC (17-Jan-2023)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: -
Qualification: -
Power Dissipation: 500W
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-247
Drain Source Voltage Vds: 600V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 22A
Drain Source On State Resistance: 0.39ohm
Gate Source Threshold Voltage Max: 5V

Delivery and price
Units per pack	300
Price	2.97 €
Current stock	10+
Lead time	30 days

Datasheet

## **Polar3[TM ] HiperFET[TM] Power MOSFET** 

**IXFA22N60P3 IXFP22N60P3 IXFQ22N60P3 IXFH22N60P3** 

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 

|**TO-263 (IXFA)**<br>G<br>S<br>~~=~~|**TO-263 (IXFA)**<br>G<br>S<br>~~=~~|**TO-263 (IXFA)**<br>G<br>S<br>~~=~~|**TO-220 (IXFP)**|**TO-220 (IXFP)**||||||
|---|---|---|---|---|---|---|---|---|---|
||D (Tab)|||S<br>G<br>D|D (Tab)||||2|
|**Symbol**|**Test Conditions**|||||**Maximum Ratings**||||
|**VDSS**|TJ = 25C to 150C||||||600||V|
|**VDGR**|TJ = 25C to 150C, RGS= 1M||||||600||V|
|**VGSS**|Continuous||||||30||V|
|**VGSM**|Transient||||||40||V|
|**ID25**|TC = 25C||||22|22|22||A|
|**IDM**|TC = 25C, Pulse Width Limited by T|||C, Pulse Width Limited by TJM|||55||A|
|**IA**<br>**EAS**|TC = 25C<br>TC = 25C||||||11<br>400||A<br>mJ|
|**dv/dt**I|IS IDM, VDD VDSS, TJ||150°C                                      35                V/ns|150°C                                      35                V/ns|150°C                                      35                V/ns|150°C                                      35                V/ns|150°C                                      35                V/ns|150°C                                      35                V/ns||
|**PD**|TC = 25C||||||500||W|
|**TJ**|||||-55 ... +150||-55 ... +150|C||
|**TJM**<br>**Tstg**|||||-55 ... +150||150<br>-55 ... +150|C<br>C||
|**TL**|Maximum Lead Temperature for Soldering                    300|Maximum Lead Temperature for Soldering                    300||Maximum Lead Temperature for Soldering                    300|Maximum Lead Temperature for Soldering                    300|Maximum Lead Temperature for Soldering                    300|Maximum Lead Temperature for Soldering                    300||°C|
|**TSOLD**|1.6 mm (0.062in.) from Case for 10s                              260||1.6 mm (0.062in.) from Case for 10s                              260|1.6 mm (0.062in.) from Case for 10s                              260|1.6 mm (0.062in.) from Case for 10s                              260|1.6 mm (0.062in.) from Case for 10s                              260|1.6 mm (0.062in.) from Case for 10s                              260||°C|
|**FC**|Mounting Force (TO-263)                         10..65 / 2.2..14.6|||Mounting Force (TO-263)                         10..65 / 2.2..14.6|||||N/lb|
|**Md**|Mounting Torque (TO-247, TO-220 & TO-3P)       1.13 / 10|||||Mounting Torque (TO-247, TO-220 & TO-3P)       1.13 / 10||Nm/lb.in||
|**Weight**<br>TO-220<br>TO-3P|**Weight**TO-263<br>TO-220<br>TO-3P||||2.5<br>3.0<br>5.5|2.5<br>3.0<br>5.5|2.5<br>3.0<br>5.5||g<br>g<br>g|
|TO-247                                                                                          6.0                         g|TO-247                                                                                          6.0                         g|TO-247                                                                                          6.0                         g|TO-247                                                                                          6.0                         g|TO-247                                                                                          6.0                         g|TO-247                                                                                          6.0                         g|TO-247                                                                                          6.0                         g|TO-247                                                                                          6.0                         g|TO-247                                                                                          6.0                         g|TO-247                                                                                          6.0                         g|
|**Symbol**|**Test Conditions                                             Characteristic Values**||**Test Conditions                                             Characteristic Values**|**Test Conditions                                             Characteristic Values**|**Test Conditions                                             Characteristic Values**|||**Test Conditions                                             Characteristic Values**||
|(TJ= 25C Unless Otherwise Specified)<br>**Min.       Typ.      Max.**<br>**BVDSS**<br>VGS = 0V, ID= 1mA<br>600<br>**VGS(th)**<br>VDS = VGS, ID= 1.5mA<br>3.0<br>**IGSS**<br>VGS =30V, VDS= 0V<br>**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125C|||||**Min.       Typ.      Max.**<br>600<br>3.0<br>1.25||**Min.       Typ.      Max.**<br>5.0    V<br>100  nA<br>25<br>1.25<br>~~|~~<br>~~|~~<br>~~|_~~||V<br>5.0    V<br>100  nA<br>25A<br>1.25mA|
|**RDS(on)**|VGS = 10V, ID= 0.5 • ID25, Note 1||||||390  m|390  m|390  m|



**V =   600V DSS I =   22A D25 R  390m  DS(on)** 

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TO-3P (IXFQ)<br>G<br>D<br>S<br>D (Tab)<br>TO-247 (IXFH)<br>G<br>D<br>S D (Tab)<br>**----- End of picture text -----**<br>


G  = Gate           D      =  Drain S  = Source       Tab   =  Drain 

## **Features** 

- Fast Intrinsic Rectifier 

- Avalanche Rated  Low RDS(ON) and QG  Low Package Inductance 

## **Advantages** 

- High Power Density 

- Easy to Mount  Space Savings 

## **Applications** 

- Switch-Mode and Resonant-Mode 

- Power Supplies  DC-DC Converters 

- Laser Drivers 

- AC and DC Motor Drives 

- Robotics and Servo Controls 

DS100321D(6/18) 

© 2018 IXYS CORPORATION,  All Rights Reserved 

## **IXFA22N60P3  IXFP22N60P3 IXFQ22N60P3 IXFH22N60P3** 

|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|
|---|---|---|
|(TJ= 25C Unless Otherwise Specified)**Min.**|**Typ. **|**Max.**|
|**gfs**<br>VDS = 20V, ID= 0.5 • ID25, Note 1                   14|24|S|
|**Ciss**<br> <br>**Coss**<br>VGS = 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|2600<br>265<br>3.4|pF<br>pF<br>pF|
|**RGi**<br>Gate Input Resistance<br>|2.1||
|**td(on)**<br> <br>**tr**<br>   <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 1(External)|28<br>17<br>54<br>19|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**<br>VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br> <br>**Qgd**<br>|38<br>10<br>11|nC<br>nC<br>nC|
|**RthJC**<br>**RthCS**<br>(TO-220)<br> <br>(TO-247 & TO-3P)<br>|<br>0.50<br>0.25|0.25 C/W<br>C/W<br>C/W|



## **Source-Drain Diode** 

|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br> |**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br> |**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br> |
|---|---|---|
|(TJ= 25C Unless Otherwise Specified)**Min.**|**Typ. **|**Max.**|
|**IS**<br>VGS= 0V||22<br>A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM||88<br>A|
|**VSD**<br>IF= IS, VGS= 0V, Note 1||1.4<br>V|
|**trr**<br> <br>**IRM** <br>**QRM**<br> <br>IF= 11A, -di/dt = 100A/s<br>VR= 100V, VGS = 0V|<br>8.0 <br>0.8|250     ns<br> A<br>μC|



Note      1.  Pulse test, t  300s, duty cycle, d  2%. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

## **IXFA22N60P3  IXFP22N60P3 IXFQ22N60P3 IXFH22N60P3** 

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Fig. 1. Output Characteristics @ TJ = 25 [o] C<br>22<br>20 VGS = 10V<br>          7V<br>18<br>16<br>6V<br>14<br>12<br>10<br>8<br>6<br>4<br>2 5V<br>0<br>0 1 2 3 4 5 6 7 8 9<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


## **Fig. 3. Output Characteristics @ TJ = 125[o] C** 

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22<br>20 V GS = 10V<br>          7V<br>18<br>16 6V<br>14<br>12<br>10<br>8<br>5V<br>6<br>4<br>2<br>4V<br>0<br>0 2 4 6 8 10 12 14 16 18 20 22<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 11A Value vs.<br>Drain Current<br>3.4<br>V GS = 10V<br>3.0<br>TJ = 125 [o] C<br>2.6<br>2.2<br>TJ = 25 [o] C<br>1.8<br>1.4<br>1.0<br>0.6<br>0 5 10 15 20 25 30 35 40 45<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>45<br>40 V GS = 10V<br>35<br>7V<br>30<br>25<br>20<br>6V<br>15<br>10<br>5<br>5V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 4. RDS(on) Normalized to ID = 11A Value vs.<br>Junction Temperature<br>3.4<br>VGS = 10V<br>3.0<br>2.6<br>2.2<br>I D = 22A<br>1.8<br>I  D  = 11A<br>1.4<br>1.0<br>0.6<br>0.2<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br>Fig. 6. Maximum Drain Current vs. Case Temperature<br>24<br>20<br>16<br>12<br>8<br>4<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


© 2018 IXYS CORPORATION,  All Rights Reserved 

## **IXFA22N60P3  IXFP22N60P3 IXFQ22N60P3 IXFH22N60P3** 

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Fig. 7. Input Admittance Fig. 8. Transconductance<br>35 45<br>TJ = - 40 [o] C<br>40<br>30<br>35<br>25 TJ = 125 [o] C 25 [o] C<br>        25 [o] C 30<br>    - 40 [o] C<br>20 25 125 [o] C<br>15 20<br>15<br>10<br>10<br>5<br>5<br>0 0<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 5 10 15 20 25 30 35<br>VGS - Volts ID - Amperes<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge<br>40 10<br>9  VDS = 300V<br>35<br> I D = 11A<br>8<br>30  I G = 10mA<br>7<br>25<br>6<br>20 5<br>4<br>15<br>3<br>10 TJ = 125 [o] C<br>T J  = 25 [o] C 2<br>5<br>1<br>0 0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 5 10 15 20 25 30 35 40<br>VSD - Volts QG - NanoCoulombs<br> - Siemens<br> - AmperesID gf s<br> - Volts<br> - Amperes GS<br>IS V<br>**----- End of picture text -----**<br>


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Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area<br>10,000 100<br>f = 1 MHz  Ciss RDS(on) Limit<br>25μs<br>1,000 100μs<br>10<br>100 Coss<br>1<br>10<br>TJ = 150 [o] C<br>Crss<br>TC = 25 [o] C<br>Single Pulse  1ms<br>1 0.1<br>0 5 10 15 20 25 30 35 40 10 100 1,000<br>VDS - Volts VDS - Volts<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

**IXFA22N60P3  IXFP22N60P3 IXFQ22N60P3 IXFH22N60P3** 

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Fig. 13. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - K/ W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2018 IXYS CORPORATION,  All Rights Reserved 

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IXFA22N60P3  IXFP22N60P3<br> IXFQ22N60P3 IXFH22N60P3<br>**----- End of picture text -----**<br>


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TO-263 Outline TO-220 Outline<br>tiazehtks wl|) 67028F035 10.70 | 0.90|<br>jos Loar) Lol | 6a oss 1060) 1181 1521] | |<br>Gy, (Jay rc [018 | 024 | 0.451 0.60 | o jo<br> eiamial ae I<br>1 - Gate i 3 L eth<br>2,4 - Drain 1 - Gate<br>3 - Source cwea "oes L1 | .039 | .060 | 1.00 | 1.52 | 2,4 - Drain<br>Pog Tot =|) t= 3 - Source<br>**----- End of picture text -----**<br>


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TO-247 Outline<br>—<br>ate pei<br>Le aa<br>|] On[ES &<br>at<br>,<br>12<br>u 3 samt<br>el<br>‘<br>1 - Gate<br>EV. 2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


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TO-3P Outline<br>| E A oP<br>rT \) REL ek<br>| D1<br>Lif aia<br>mi<br>lee ef 1 - Gate<br>2,4 - Drain<br>at 3 - Source<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS REF: F_22N60P3(W6)03-26-12-A 

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Updated at April 27, 2026

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