IXFH20N80Q

## **HiPerFET[TM] Power MOSFETs Q-Class** 

N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt 

## **IXFH20N80Q IXFK20N80Q IXFT20N80Q** 

**V =    800  V** DSS **I =      20  A** D25 **R =   0.42 Ω** DS(on) 

**t ≤ 250 ns** rr 

Preliminary Data 

|**Symbol**|**Test Conditions**|**Test Conditions**|**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**|**TO-247 AD (IXFH)**|**TO-247 AD (IXFH)**||||
|---|---|---|---|---|---|---|---|---|---|---|
|**VDSS**|TJ|= 25°C to 150°C||800|V||||||
|**VDGR**|TJ|= 25°C to 150°C; RGS= 1 MΩ||800|V||||(TAB)||
|**VGS**|Continuous|||±20|V||||||
|**VGSM**|Transient|||±30|V||||||
|**ID25**|TC|= 25°C||20|A|**TO-268 (D3) ( IXFT)**|||||
|**IDM**|TC|= 25°C, pulse width limited by TJM||80|A||||||
|**IAR**|TC|= 25°C||20|A||||||
|**EAR**|TC|= 25°C||45|mJ|G|||||
|**EAS**|TC|= 25°C||1.5|J||S||||
|**dv/dt**|IS|≤IDM, di/dt≤100 A/µs, VDD ≤VDSS,||5|V/ns||||||
|TJ ≤150°C, RG= 2Ω<br>**PD**<br>TC = 25°C<br>360<br>W<br>**TJ**<br>-55 ... +150<br>°C<br>**TJM**<br>150<br>°C<br>**Tstg**<br>-55 ... +150<br>°C<br>~~a~~||||||**TO-264 AA (IXFK)**<br>G<br>D<br>SF||SF|SF|SF|
|**TL**|1.6 mm (0.063 in) from case for 10 s|1.6 mm (0.063 in) from case for 10 s||300|°C||S||D (TAB)|D (TAB)|
|**Md**|Mounting torque||TO-247|1.13/10|Nm/lb.in.|G = Gate<br>S = Source|TAB = Drain||||
||||TO-264|0.9/6|Nm/lb.in.||||||
|**Weight**||TO-247|TO-247|6|g||||||
|||TO-268|TO-268|4|g||||||
|||TO-264|TO-264|10|g||||||



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TO-264 AA (IXFK)<br>G<br>SF D<br>S D (TAB)<br>G = Gate<br>S = Source TAB = Drain<br>**----- End of picture text -----**<br>


## **Features** 

|**Symbol**|**Test Conditions**||**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|
|---|---|---|---|---|---|---|---|
|||(TJ= 25°C, unless otherwise specified)|C, unless otherwise specified)|C, unless otherwise specified)||||
||||**min.**||**typ.**|**max.**||
|**VDSS**|VGS = 0 V, ID= 250µA||800||||V|
|**VGS(th)**|VDS = VGS, ID= 4 mA||2.5|||4.5|V|
|**IGSS**|VGS =±20 VDC, VDS= 0|||||±200|nA|
|**IDSS**|VDS = VDSS|TJ= 25°C||||25|µA|
||VGS = 0 V|TJ= 125°C||||1|mA|
|**RDS(on)**|VGS = 10 V, ID= 0.5 • ID25|||||0.42|Ω|
||Pulse test, t≤300µs, duty cycle d|s, duty cycle d≤2 %||||||



IXYS advanced low Qg process International standard packages Epoxy meet UL 94 V-0, flammability classification 

Low R low Q DS (on) g Avalanche energy and current rated Fast intrinsic rectifier 

## **Advantages** 

Easy to mount Space savings High power density 

© 2002 IXYS All rights reserved 

DS98616A(12/02) 

## **IXFH20N80Q IXFK20N80Q IXFT20N80Q** 

## **TO-247 AD (IXFH) Outline** 

## **Symbol** 

## **Test Conditions** 

## **Characteristic Values** 

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|||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|(TJ = 25°C, unless otherwise specified)|min.|typ.|max.|E|Ar|
|Pa|A2|th|
|4|toa|s|
|gfs|VDS|= 10 V; ID = 0.5 • ID25, pulse test|11|19|S|otfrR|HQt—N|
|1       2       3|
|Ciss|5100|pF|L1|||op|Terminals:1 - Gate|
|Coss|VGS|= 0 V, VDS = 25 V, f = 1 MHz|500|pF|L|_|2 - Drain3 - Source|
|Crss|170|pF|Tab - Drain|
|Al|||
|t|28|ns|
|d(on)|5|||b2|
|tr|VGS|= 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25|27|ns|bl|d|||bec|
|Dim.|Millimeter|Inches|
|td(off)|RG = 1.5 Ω (External),|74|ns|Min.|Max.|Min.|Max.|
|tf|14|ns|AA1|4.72.2|2.545.3|.087.185|.102.209|
|Q|150|200|nC|A2|2.2|2.6|.059|.098|
|g(on)|b|1.0|1.4|.040|.055|
|Qgs|VGS|= 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25|34|nC|bb12|1.652.87|2.133.12|.065.113|.084.123|
|Qgd|80|nC|C|.4|.8|.016|.031|
|D|20.80|21.46|.819|.845|
|RthJC|0.35|K/W|E|15.75|16.26|.610|.640|
|e|5.20|5.72|0.205|0.225|
|L|19.81|20.32|.780|.800|
|L1|4.50|.177|
|RthCK|TO-247TO-264|0.250.15|K/WK/W|∅QP|3.555.89|3.656.40|0.232.140|0.252.144|
|R|4.32|5.49|.170|.216|
|S|6.15|BSC|242|BSC|
|=|
|Source-Drain Diode|Characteristic Values|
|(TJ = 25|°|C, unless otherwise specified)|TO-264 AA Outline|
|Symbol|Test Conditions|min.|typ.     max.|
|EA|
|IS|VGS|= 0 V|20|A|R|4)rsoHays|G|be|eT|AZ|
|ISM|Repetitive; pulse width limited by TJM|80|A|D||iaa|éa|
|a1|2|3|
|VSD|IF = IS, VGS = 0 V,|1.5|V|t|ui|
|Pulse test, t|≤|300|µ|s, duty cycle|d ≤|2 %|
|trr|250|ns|||
|QRM|IF = IS -di/dt = 100 A/|µ|s, VR = 100 V|1|µ|C|or|ee|Al|
|IRM|}|9|A|b|Cc|
|Rickseite|
|Foqe=—_4__._-op|
|Dim.|Millimeter|Inches|
|Min.|Max.|Min.|Max.|
|A|4.82|5.13|.190|.202|
|A1|2.54|2.89|.100|.114|
|TO-268 Outline|oy);|MININCHES||MAX|[MINMILLIMETERS||MAX|A2b|1.122.00|1.422.10|.044.079|.056.083|
|:|are|Al|106|[114|270|||2.90|b1b2|2.392.90|2.693.09|.094.114|.106.122|
|—|<|4|b|045|057|LIS|145|c|0.53|0.83|.021|.033|
|ae|C2 Z|m|A2|||_001_|||ol|||002|||025|D|25.91|26.16|1.020|1.030|
|E|19.81|19.96|.780|.786|
|o|7|4|c2_|_057|||.063|[||145|||160|e|5.46 BSC|.215 BSC|
|J|0.00|0.25|.000|.010|
|TT|T|Ae|EReSeHEpa|
|19|3|_|=|D1|438_[|500|||12.40|||12.70|K|0.00|0.25|.000|.010|
|ud|i|fn|H|‘4|Te=|||H|aa|i|E|624|632|||15.85|||16.05|L|20.32|20.83|.800|.820|
|L1|2.29|2.59|.090|.102|
|_|alle pe|ol.|Ei|||524|[535|||1330|||13.60|
|P|3.17|3.66|.125|.144|
|Q|6.07|6.27|.239|.247|
|f||PH|||736|||752|||18.70|||1910 ||Q1|8.38|8.69|.330|.342|
|(al|S}|1L|047094|[055106|2.40120|2.701.40|R|3.81|4.32|.150|.170|
|Pa|op|JN|Sp|ae|L2_|_.039|[||045|||100|115|R1|1.78|2.29|.070|.090|
|ities|Se|+|L3|O10|BSC|0.25 BSC|S|6.04|6.30|.238|.248|
|T|1.57|1.83|.062|.072|

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Tab - Drain 

IXYS reserves the right to change limits, test conditions,  and  dimensions. 

IXYS MOSFETs  and IGBTs are covered by one or more of the following U.S. patents: 

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025