IXFH20N50P3

Power MOSFET, N Channel, 500 V, 20 A, 0.3 ohm, TO-247, Through Hole

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Manufacturer: IXYS SEMICONDUCTOR
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power
MSL: -
SVHC: No SVHC (17-Jan-2023)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: -
Qualification: -
Power Dissipation: 380W
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-247
Drain Source Voltage Vds: 500V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 20A
Drain Source On State Resistance: 0.3ohm
Gate Source Threshold Voltage Max: 5V

Delivery and price
Units per pack	250
Price	2.67 €
Current stock	10+
Lead time	30 days

Datasheet

## **Polar3[TM ] HiperFET[TM] Power MOSFET** 

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 

**IXFA20N50P3 IXFP20N50P3 IXFQ20N50P3 IXFH20N50P3** 

**V =   500V DSS I =   20A D25 R  300m  DS(on)** 

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TO-263 (IXFA) TO-220 (IXFP)<br>G<br>S<br>G<br>D (Tab) D<br>S<br>D (Tab)<br>**----- End of picture text -----**<br>


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TO-3P (IXFQ)<br>G<br>D<br>S<br>D (Tab)<br>TO-247 (IXFH)<br>G<br>D<br>S D (Tab)<br>**----- End of picture text -----**<br>


|**Symbol**|**Test Conditions**|**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**||**TO-247 (IXFH)**|**TO-247 (IXFH)**|**TO-247 (IXFH)**|||
|---|---|---|---|---|---|---|---|---|---|---|
|**VDSS**|TJ = 25C to 150C||500||V||||||
|**VDGR**|TJ = 25C to 150C, RGS= 1M||500||V||||||
|**VGSS**<br>**VGSM**|Continuous<br>Transient||30<br>40||V<br>V|G|||||
|**ID25**|TC = 25C|20|20||A|S<br>D|||D (Tab)||
|**IDM**|TC = 25C, Pulse Width Limited by TJM||40||A||||||
|**IA**<br>**EAS**|TC = 25C<br>TC = 25C||10<br>300||A<br>mJ|G  = Gate           D      =  Drain<br>S  = Source       Tab   =  Drain|G  = Gate           D      =  Drain<br>S  = Source       Tab   =  Drain|G  = Gate           D      =  Drain<br>S  = Source       Tab   =  Drain|||
|**dv/dt**I|IS IDM, VDD VDSS, TJ 150°C                                      35                V/ns||150°C                                      35                V/ns|150°C                                      35                V/ns|||||||
|**PD**|TC = 25C||380||W||||||
|**TJ**||-55 ... +150||C|||||||
|**TJM**|||150|C||**Features**|||||
|**Tstg**||-55 ... +150||C|||||||
|**TL**<br>**TSOLD**|Maximum Lead Temperature for Soldering                    300<br>Plastic Body for 10s<br>260                    °C||Maximum Lead Temperature for Soldering                    300<br>260                    °C|260                    °C|°C<br>260                    °C|Fast Intrinsic Rectifier<br>Avalanche Rated|||||
|**FC**<br>**Md**|Mounting Force   (TO-263)                       10..65 / 2.2..14.6<br>Mounting Torque (TO-220, TO-3P & TO-247)       1.13 / 10|||N/lb<br>Nm/lb.in||Low RDS(ON)and QG<br>Low Package Inductance|||||
|**Weight**|**Weight**TO-263|2.5|2.5||g||||||
|TO-220<br>TO-3P|TO-220<br>TO-3P|3.0<br>5.5|3.0<br>5.5||g<br>g|**Advantages**|||||
|TO-247                                                                                          6.0                         g|TO-247                                                                                          6.0                         g|TO-247                                                                                          6.0                         g|TO-247                                                                                          6.0                         g|TO-247                                                                                          6.0                         g|TO-247                                                                                          6.0                         g|High Power Density|||||
|||||||Easy to Mount|||||
|**Symbol**|**Test Conditions                                             Characteristic Values**|**Test Conditions                                             Characteristic Values**||**Test Conditions                                             Characteristic Values**||Space Savings|||||
|(TJ= 25C Unless Otherwise Specified)|C Unless Otherwise Specified)|**Min.       Typ.      Max.**|**Min.       Typ.      Max.**|**Min.       Typ.      Max.**|||||||
|**BVDSS**|VGS = 0V, ID= 1mA|500|||||V|**Applications**|||||
|**VGS(th)**<br>**IGSS**<br>**IDSS**<br>T|VDS = VGS, ID= 1.5mA<br>VGS =30V, VDS= 0V<br>VDS = VDSS, VGS= 0V<br>T|3.0<br>5.0    V<br>100  nA<br>25<br>TJ= 125C<br>1.25<br>||<br>||~~_~~|||5.0    V<br>100  nA<br>25A<br>1.25mA|Switch-Mode and Resonant-Mode<br>Power Supplies<br>DC-DC Converters<br>Laser Drivers<br>AC and DC Motor Drives|||||
|**RDS(on)**|VGS = 10V, ID= 0.5 • ID25, Note 1<br>300  m||300  m|300  m|300  m|Robotics and Servo Controls||||Robotics and Servo Controls|



- Switch-Mode and Resonant-Mode 

- Power Supplies  DC-DC Converters  Laser Drivers  AC and DC Motor Drives  Robotics and Servo Controls 

DS100414B(6/18) 

© 2018 IXYS CORPORATION,  All Rights Reserved 

**IXFA20N50P3 IXFA20N50P3 IXFQ20N50P3 IXFH20N50P3** 

|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|
|---|---|---|
|(TJ= 25C Unless Otherwise Specified)**Min.**|**Typ. **|**Max.**|
|**gfs**<br>VDS= 20V, ID= 0.5 • ID25, Note 1                    11|18|S|
|**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|1800<br>230<br>8.3|pF<br>pF<br>pF|
|**RGi**<br>Gate Input Resistance<br>|2.3||
|**td(on)**<br> <br>**tr**<br>   <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 5(External)|10<br>5<br>43<br>9|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br> <br>**Qgd**<br>|36<br>7<br>13|nC<br>nC<br>nC|
|**RthJC**<br>**RthCS**<br>TO-220<br> <br>TO-247 & TO-3P<br>|<br>0.50<br>0.25|0.36 C/W<br>C/W<br>C/W|



## **Source-Drain Diode** 

|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br> |**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br> |**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br> |
|---|---|---|
|(TJ= 25C Unless Otherwise Specified)**Min.**|**Typ. **|**Max.**|
|**IS**<br>VGS= 0V||20<br>A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM||80<br>A|
|**VSD**<br>IF= IS, VGS= 0V, Note 1||1.4<br>V|
|**trr**<br> <br>**IRM** <br>**QRM**<br> <br>IF= 10A, -di/dt = 100A/s<br>VR= 100V, VGS = 0V|<br>8.0 <br>0.6|250     ns<br> A<br>μC|



Note      1.  Pulse test, t  300s, duty cycle, d  2%. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

## **IXFA20N50P3 IXFA20N50P3 IXFQ20N50P3 IXFH20N50P3** 

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Fig. 1. Output Characteristics @ TJ = 25 [o] C<br>20<br>V GS = 10V<br>18          7V<br>16<br>6V<br>14<br>12<br>10<br>8<br>5.5V<br>6<br>4<br>2 5V<br>0<br>0 1 2 3 4 5 6 7<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 3. Output Characteristics @ TJ = 125 [o] C<br>20<br>VGS = 10V<br>18           7V<br>16<br>14 6V<br>12<br>10<br>5V<br>8<br>6<br>4.5V<br>4<br>2 4V<br>0<br>0 2 4 6 8 10 12 14 16<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 10A Value vs.<br>Drain Current<br>3.8<br>VGS = 10V<br>3.4<br>3.0 TJ = 125 [o] C<br>2.6<br>2.2<br>1.8<br>1.4 TJ = 25 [o] C<br>1.0<br>0.6<br>0 5 10 15 20 25 30 35 40 45<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>45<br>V GS = 10V<br>40           8V<br>35<br>7V<br>30<br>25<br>20 6V<br>15<br>10<br>5 5V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 4. RDS(on) Normalized to ID = 10A Value vs.<br>Junction Temperature<br>3.4<br>VGS = 10V<br>3.0<br>2.6<br>I D = 20A<br>2.2<br>1.8 I D = 10A<br>1.4<br>1.0<br>0.6<br>0.2<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br>Fig. 6. Maximum Drain Current vs. Case Temperature<br>24<br>20<br>16<br>12<br>8<br>4<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


© 2018 IXYS CORPORATION,  All Rights Reserved 

**IXFA20N50P3 IXFA20N50P3 IXFQ20N50P3 IXFH20N50P3** 

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Fig. 7. Input Admittance<br>20<br>18<br>16<br>14<br>12<br>10<br>8 TJ = 125 [o] C<br>25 [o] C<br>6 - 40 [o] C<br>4<br>2<br>0<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5<br>VGS - Volts<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>60<br>50<br>40<br>30<br>20<br>TJ = 125 [o] C<br>TJ = 25 [o] C<br>10<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1<br>VSD - Volts<br> - Amperes<br>ID<br> - Amperes<br>IS<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

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10,000<br>1,000 Ciss<br>100 Coss<br>10<br>Crss<br>f = 1 MHz<br>1<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


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Fig. 8. Transconductance<br>30<br>TJ = - 40 [o] C<br>25<br>25 [o] C<br>20<br>15 125 [o] C<br>10<br>5<br>0<br>0 2 4 6 8 10 12 14 16 18 20 22<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br>


**Fig. 10. Gate Charge** 

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**----- Start of picture text -----**<br>
10<br>9  VDS = 250V<br> I D = 10A<br>8  I  G  = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 5 10 15 20 25 30 35 40<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br>


**Fig. 12. Forward-Bias Safe Operating Area** 

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100<br>RDS(on) Limit<br>100μs<br>10<br>1<br>TJ = 150 [o] C 1ms<br>TC = 25 [o] C<br>Single Pulse<br>0.1<br>10 100 1,000<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXFA20N50P3 IXFA20N50P3 IXFQ20N50P3 IXFH20N50P3** 

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Fig. 13. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2018 IXYS CORPORATION,  All Rights Reserved 

IXYS REF: F_20N50P3(W5) 11-14-11 

## **IXFA20N50P3 IXFA20N50P3 IXFQ20N50P3 IXFH20N50P3** 

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TO-263 Outline TO-220 Outline<br>tiazehtks wl|) 67028F035 10.70 | 0.90|<br>jos Loar) Lol | 6a oss 1060) 1181 1521] | |<br>Gy, (Jay rc [018 | 024 | 0.451 0.60 | o jo<br> eiamial ae I<br>1 - Gate i 3 L eth<br>2,4 - Drain 1 - Gate<br>3 - Source cwea "oes L1 | .039 | .060 | 1.00 | 1.52 | 2,4 - Drain<br>Pog Tot =|) t= 3 - Source<br>**----- End of picture text -----**<br>


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TO-247 Outline<br>—<br>ate pei<br>Le aa<br>|] On[ES &<br>at<br>,<br>12<br>u 3 samt<br>el<br>‘<br>1 - Gate<br>EV. 2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


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TO-3P Outline<br>| E A oP<br>rT \) REL ek<br>| D1<br>Lif aia<br>mi<br>lee ef 1 - Gate<br>2,4 - Drain<br>at 3 - Source<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

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Updated at April 27, 2026

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