IXFH18N100Q3

Power MOSFET, N Channel, 1 kV, 18 A, 0.66 ohm, TO-247, Through Hole

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Manufacturer: IXYS SEMICONDUCTOR
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:1kV; On Resistance Rds(on):0.66ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:6.5V;
MSL: -
SVHC: No SVHC (17-Jan-2023)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: -
Qualification: -
Power Dissipation: 830W
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-247
Drain Source Voltage Vds: 1kV
Operating Temperature Max: 150°C
Continuous Drain Current Id: 18A
Drain Source On State Resistance: 0.66ohm
Gate Source Threshold Voltage Max: 6.5V

Delivery and price
Units per pack	250
Price	10.21 €
Current stock	200+
Lead time	30 days

Datasheet

**Q3-Class HiperFET[TM] Power MOSFET** 

## **IXFT18N100Q3 IXFH18N100Q3** 

|**Q3-Class**|**Q3-Class**||**IXFT18N100Q3**|**IXFT18N100Q3**|**IXFT18N100Q3**|**IXFT18N100Q3**|**IXFT18N100Q3**|**IXFT18N100Q3**|**IXFT18N100Q3**||**VDSS**<br>**=   1000V**|**VDSS**<br>**=   1000V**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**HiperFET[TM]**|||**IXFH18N100Q3**||||||||**ID25**<br>**=   18A**||
|**Power MOSFET**|||||||||||**RDS(on)** **660m**||
|N-Channel Enhancement Mode<br>Avalanche Rated<br>Fast Intrinsic Rectifier|||||||D<br>G<br>S<br>@&||||**TO-268**<br>**(IXFT)**<br>S<br>G<br>~~2~~||
|**Symbol**|**Test Conditions**||**Maximum Ratings**||||||||D(Tab)||
|**VDSS**|TJ = 25C to 150C|||||1000||||V|||
|**VDGR**|TJ = 25C to 150C, RGS= 1M|||||1000||||V|**TO-247**<br>**(IXFH)**||
|**VGSS**|Continuous|||||30||||V|||
|**VGSM**|Transient|||||40||||V|||
|**ID25**<br>**IDM**|TC = 25C<br>18<br>TC = 25C, Pulse Width Limited by TJM|||18|18|18<br>60|18|||A<br>A|G<br>S<br>D(Tab)<br>D||
|**IA**|TC = 25C|||||18||||A|||
|**EAS**|TC = 25C|||||1.5||||J|G  = Gate           D      =  Drain|G  = Gate           D      =  Drain|
|**dv/dt**I|IS IDM, VDD VDSS, TJ 150°C                                      50                V/ns||150°C                                      50                V/ns|150°C                                      50                V/ns|150°C                                      50                V/ns|150°C                                      50                V/ns|150°C                                      50                V/ns|150°C                                      50                V/ns|||S  = Source       Tab   =  Drain||
|**PD**|TC = 25C|||||830||||W|||
|**TJ**|||-55 ... +150||-55 ... +150|||C|||||
|**TJM**||||||150||C|||**Features**||
|**Tstg**|||-55 ... +150||-55 ... +150|||C|||Low Intrinsic Gate Resistance||
|**TL**|Maximum Lead Temperature for Soldering                    300|||Maximum Lead Temperature for Soldering                    300|Maximum Lead Temperature for Soldering                    300|Maximum Lead Temperature for Soldering                    300||||°C|International Standard Packages||
|**TSOLD**|1.6 mm (0.062in.) from Case for 10s                              260|1.6 mm (0.062in.) from Case for 10s                              260||1.6 mm (0.062in.) from Case for 10s                              260|1.6 mm (0.062in.) from Case for 10s                              260|1.6 mm (0.062in.) from Case for 10s                              260|1.6 mm (0.062in.) from Case for 10s                              260|||°C|Low Package Inductance||
|**Md**<br>**Weight**|Mounting Torque  (TO-247)<br>**Weight**TO-268||1.13 / 10<br>4.0|1.13 / 10<br>4.0||||Nm/lb.in.<br>g|||Fast Intrinsic Rectifier<br>Low RDS(on)and QG||
|TO-247|TO-247||6.0|6.0|6.0|6.0||||g|||
||||||||||||**Advantages**||
||||||||||||High Power Density||
||||||||||||Easy to Mount||
|**Symbol**|**Test Conditions                                             Characteristic Values**|**Test Conditions                                             Characteristic Values**|**Test Conditions                                             Characteristic Values**|||||**Test Conditions                                             Characteristic Values**|||Space Savings||
|(TJ= 25C Unless Otherwise Specified)|||**Min.       Typ.      Max.**||**Min.       Typ.      Max.**|**Min.       Typ.      Max.**||**Min.       Typ.      Max.**|||||
|**BVDSS**|VGS = 0V, ID= 1mA||1000|||~~|~~||||V|**Applications**||
|**VGS(th)**<br>**IGSS**<br>**IDSS**<br>T|VDS = VGS, ID= 4mA<br>VGS =30V, VDS= 0V<br>VDS = VDSS, VGS= 0V<br>T|3.5<br>TJ= 125C<br>1.25  mA||1.25  mA|6.5    V<br>100  nA<br>25<br>1.25  mA<br>~~|~~<br>~~|_~~||||6.5    V<br>100  nA<br>25A<br>1.25  mA||DC-DC Converters<br>Battery Chargers<br>Switch-Mode and Resonant-Mode<br>Power Supplies<br>DC Choppers|Switch-Mode and Resonant-Mode|
|**RDS(on)**|VGS = 10V, ID= 0.5 • ID25, Note 1||||660  m|660  m<br>~~|~~||660  m|660  m||Temperature and Lighting Controls||



- DC-DC Converters 

- Battery Chargers  Switch-Mode and Resonant-Mode Power Supplies  DC Choppers  Temperature and Lighting Controls 

DS100390A(1/20) 

© 2020 IXYS CORPORATION,  All Rights Reserved 

**IXFT18N100Q3 IXFH18N100Q3** 

|**Symbol**<br>**Test Conditions                                           Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                           Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                           Characteristic Values**<br>|
|---|---|---|
|(TJ= 25C Unless Otherwise Specified)**Min.**|**Typ.**|**Max.**|
|**gfs**<br>VDS = 20V, ID= 0.5 • ID25, Note 1                   9|16|S|
|**Ciss**<br> <br>**Coss**<br>VGS = 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|4890<br>400<br>34|pF<br>pF<br>pF|
|**RGi**<br>Gate Input Resistance<br>|0.20||
|**td(on)**<br> <br>**tr**<br>   <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 3(External)|37<br>32<br>40<br>13|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**<br>VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br> <br>**Qgd**<br>|90<br>33<br>37|nC<br>nC<br>nC|
|**RthJC**<br>**RthCS**<br>TO-247|<br>0.21|0.15 C/W<br>C/W|



## **Source-Drain Diode** 

|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|
|---|---|---|
|(TJ= 25C Unless Otherwise Specified)**Min.**|**Typ. **|**Max.**|
|**IS**<br>VGS= 0V||18<br>A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM||72<br>A|
|**VSD**<br>IF= IS, VGS= 0V, Note 1||1.4<br>V|
|**trr**<br> <br>**IRM** <br>**QRM**<br> <br>IF= 9A, -di/dt = 100A/s<br>VR= 100V, VGS = 0V|<br>11.0 <br>1.5|300     ns<br> A<br>µC|



Note      1.  Pulse test, t  300s, duty cycle, d  2%. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

## **IXFT18N100Q3 IXFH18N100Q3** 

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Fig. 1. Output Characteristics @ TJ = 25 [o] C<br>18<br>VGS = 10V<br>16<br>14<br>8V<br>12<br>10<br>8<br>6<br>4 7V<br>2<br>6V<br>0<br>0 1 2 3 4 5 6 7 8 9 10 11<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 3. Output Characteristics @ TJ = 125 [o] C<br>18<br>VGS = 10V<br>16<br>14<br>7V<br>12<br>10<br>8<br>6<br>4 6V<br>2<br>5V<br>0<br>0 2 4 6 8 10 12 14 16 18 20 22 24 26<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 9A Value vs.<br>Drain Current<br>2.8<br>2.6 V GS = 10V<br>2.4 T J  = 125 [o] C<br>2.2<br>2.0<br>1.8<br>1.6<br>1.4 TJ = 25 [o] C<br>1.2<br>1.0<br>0.8<br>0 4 8 12 16 20 24 28 32 36<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>40<br>35 V GS = 10V<br>30 9V<br>25<br>20<br>8V<br>15<br>10<br>5 7V<br>0 6V<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 4. RDS(on) Normalized to ID = 9A Value vs.<br> Junction Temperature<br>3.4<br>VGS = 10V<br>3.0<br>2.6<br>2.2 I D = 18A<br>1.8 I  D = 9A<br>1.4<br>1.0<br>0.6<br>0.2<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br>Fig. 6. Maximum Drain Current vs.<br>Case Temperature<br>20<br>18<br>16<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


© 2020 IXYS CORPORATION,  All Rights Reserved 

## **IXFT18N100Q3 IXFH18N100Q3** 

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**----- Start of picture text -----**<br>
Fig. 7. Input Admittance Fig. 8. Transconductance<br>35 40<br>30 VDS = 20V  35 VDS = 20V  T J = - 40 [o] C<br>30<br>25<br>25 25 [o] C<br>20<br>20<br>15 T J = 125 [o] C  125 [o] C<br>15<br>25 [o] C<br>10 - 40 [o] C<br>10<br>5 5<br>0 0<br>4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 0 5 10 15 20 25 30 35<br>VGS - Volts ID - Amperes<br> - Amperes  - Siemens<br>ID gf s<br>**----- End of picture text -----**<br>


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Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>60<br>50<br>40<br>30<br>TJ = 125 [o] C<br>20<br>TJ  = 25 [o] C<br>10<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2<br>VSD - Volts<br>Fig. 11. Capacitance<br>10,000<br>Ciss<br>1,000<br>C oss<br>100<br>f = 1 MHz  Crss<br>10<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br> - Amperes<br>IS<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


**Fig. 10. Gate Charge** 

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**----- Start of picture text -----**<br>
16<br>14  VDS = 500V<br> I D = 9A<br>12  I  G = 10mA<br>10<br>8<br>6<br>4<br>2<br>0<br>0 10 20 30 40 50 60 70 80 90 100 110 120 130<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br>


**Fig. 12. Forward-Bias Safe Operating Area** 

**==> picture [258 x 186] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>RDS(on) Limit<br>25µs<br>10 100µs<br>1<br>T J = 150 [o] C<br>T C  = 25oC    1ms<br>Single Pulse<br>0.1<br>10 100 1,000<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

**IXFT18N100Q3 IXFH18N100Q3** 

**==> picture [540 x 326] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 13. Maximum Transient Thermal Impedance<br>1<br>Fig. 13 Maximum Transient Thermal Impedance<br>0.4 sdasd<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2020 IXYS CORPORATION,  All Rights Reserved 

IXYS REF: F_18N100Q3(Q7) 9-28-11 

## **IXFT18N100Q3 IXFH18N100Q3** 

**==> picture [92 x 208] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-268 Outline __;<br>= BS<br>| n<br>.<br>er.<br>Ob iF<br>ap hls<br>ral<br>1 - Gate<br>2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
TO-247 Outline<br>ee LEbeoy1)Sw t<br>R l| © lt [s] 02 (©)<br>of a Wd<br>, ss |<br>Tt<br>H ot L ei<br>L<br>wi<br>¢ b2 1 - Gate<br>2,4 - Drain<br>\oOMA 3 - Source<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXFT18N100Q3 IXFH18N100Q3** ~~sd~~ 

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 

© 2020 IXYS CORPORATION,  All Rights Reserved

Updated at April 29, 2026

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