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IXFH16N80P
Power MOSFET, N Channel, 800 V, 16 A, 0.6 ohm, TO-247, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd
- MSL: -
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 460W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-247
- Drain Source Voltage Vds: 800V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 16A
- Drain Source On State Resistance: 0.6ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 4.07 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
## **PolarHV[TM] Power MOSFET** **==> picture [123 x 75] intentionally omitted <==** **----- Start of picture text -----**<br> V = 800 V<br>DSS<br>I = 16 A<br>D25<br>R ≤ 600 m Ω<br>DS(on)<br>t ≤ 250 ns<br>rr<br>**----- End of picture text -----**<br> **IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS** N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated **==> picture [158 x 163] intentionally omitted <==** **----- Start of picture text -----**<br> TO-247 (IXFH)<br>G D S<br>TO-268 (IXFT)<br>G<br>S<br>D (TAB)<br>**----- End of picture text -----**<br> |Fast Recovery Diode<br>Avalanche Rated|Fast Recovery Diode<br>Avalanche Rated|||:DS|:DS|:DS|:DS|**TO-247 (IXFH)**| |---|---|---|---|---|---|---|---|---| |**Symbol**|**Test Conditions**|||**Maximum Ratings**||||| |**VDSS**|TJ= 25°C to 150°C||||800||V|| |**VDGR**<br>**VGSS**|TJ= 25°C to 150°C; RGS= 1 MΩ<br>Continuous||||800<br>±30||V<br>V|G D S| |**VGSM**|Transient||||±40||V|**TO-268 (IXFT)**| |**ID25**|TC= 25°C||||16||A|| |**IDM**|TC= 25°C, pulse width limited by TJM||||40||A|| |**IAR**|TC= 25°C||||8||A|G| |**EAR**|TC= 25°C||||30||mJ|| |**EAS**|TC= 25°C||||1.0||J|**PLUS220 (IXFV)**| |**dv/dt**|IS≤IDM, di/dt≤100 A/μs, VDD|≤VDSS|||10||V/ns|| ||TJ ≤150°C, RG= 5Ω|||||||| |**PD**|TC= 25°C||||460||W|G| |**TJ**|||-55 ... +150||||°C|S<br>D| |**TJM**|||||150||°C|| |**Tstg**|||-55 ... +150||||°C|**PLUS220SMD (IXFV...S)**| |**TL**|1.6 mm (0.062 in.) from case for 10 s||||300||°C|| |**TSOLD**|Plastic body for 10 s||||260||°C|| |**Md**|Mounting torque (TO-247)|||1.13/10||Nm/lb.in.||| |**Symbol**<br>**Test Conditions**<br>**FC**<br>Mounting force (PLUS220)<br>**Weight**<br>TO-247<br>TO-268<br>PLUS220 & PLUS220SMD<br>~~So~~|||**Characteristic Values**<br>11..65/2.5..15<br>N/lb<br>6.0<br>g<br>5.0<br>g<br>4.0<br>g|||||G = Gate<br>S = Source<br>G<br>S<br>**Features**<br>“S$| |(TJ= 25°C, unless otherwise specified)|C, unless otherwise specified)||**Min. Typ.**|**Min. Typ.**||**Max.**||Fast Recovery diode| |**BVDSS**<br>**VGS(th)**|VGS = 0 V, ID= 250μA<br>VDS = VGS, ID= 4 mA||800<br>3.0|~~—~~||5.0|V<br>V|Unclamped Inductive Switching (UIS)<br>rated<br>International standard packages<br>Low package inductance| |**IGSS**|VGS =±30 V, VDS= 0 V||||±100||nA|- easy to drive and to protect| |**IDSS**|VDS = VDSS|||||25|μA|**Advantages**| ||VGS= 0 V|TJ= 125°C||||250|μA|Easy to mount| |**RDS(on)**|VGS = 10 V, ID= 0.5 ID25<br>Pulse test, t≤300μs, duty cycle d≤2 %|||||600|mΩ|Space savings<br>High power density| **==> picture [147 x 73] intentionally omitted <==** **----- Start of picture text -----**<br> PLUS220 (IXFV)<br>G<br>D S D (TAB)<br>**----- End of picture text -----**<br> **PLUS220SMD (IXFV...S)** **==> picture [124 x 77] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>S D (TAB)<br>G = Gate D = Drain<br>S = Source TAB = Drain<br>“S$ ,<br>**----- End of picture text -----**<br> Fast Recovery diode Unclamped Inductive Switching (UIS) rated International standard packages Low package inductance - easy to drive and to protect Easy to mount Space savings High power density DS99599E(07/06) © 2006 IXYS All rights reserved **IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS** |**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br><br><br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br><br><br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br><br><br>| |---|---|---| |**Min.**|**Typ.**|**Max.**| |**gfs**<br>VDS = 20 V; ID= 0.5 ID25, pulse test<br>9|16|S| |**Ciss**<br>**Coss**<br>VGS = 0 V, VDS= 25 V, f = 1 MHz<br>**Crss**|4600<br>330<br>23|pF<br>pF<br>pF| |**td(on)**<br>**tr**<br>VGS = 10 V, VDS= VDSS,ID= 0.5 ID25<br>**td(off)**<br>RG<br>= 5Ω(External)<br>**tf**|27<br>32<br>75<br>29|ns<br>ns<br>ns<br>ns| |**Qg(on)**<br>**Qgs**<br>VGS = 10 V, VDS= 0.5 VDSS, ID= 0.5 ID25<br>**Qgd**|71<br>21<br>23|nC<br>nC<br>nC| |**RthJC**<br>**RthCS**<br>(TO-247)<br>|<br>0.21|0.27°C/W<br> °C/W| |**Source-Drain Diode**<br>**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**Symbol**<br>**Test Conditions**<br>**Min.**<br>**Typ.**<br>**Max.**||| |**IS**<br>VGS= 0 V||16<br>A| |**ISM**<br>Repetitive||48<br>A| |**VSD**<br>IF= IS, VGS= 0 V, pulse test||1.5<br>V| |**trr**<br>IF= 25A, -di/dt = 100 A/μs<br>**IRM**<br>VR= 100V; VGS= 0 V<br>**QRM**|150<br>7<br>0.7|250<br>ns<br>A<br>μC| IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 **IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS** **==> picture [495 x 219] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics<br>@ 25ºC @ 25ºC<br>16 24<br>VGS = 10V 22 VGS = 10V<br>14 7V 7V<br>20<br>12 18<br>10 6V 16 6V<br>14<br>8 12<br>10<br>6<br>8<br>4 6<br>5V 4<br>2 5V<br>2<br>0 0<br>0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 14 16 18 20<br>VDS - Volts VDS - Volts<br> - Amperes - Amperes<br>ID ID<br>**----- End of picture text -----**<br> **Fig. 3. Output Characteristics @ 125ºC** **Fig. 4. RDS(on) Normalized to ID = 8A Value vs. Junction Temperature** **==> picture [491 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 16 3.1<br>VGS = 10V<br>14 7V 2.8 VGS = 10V<br> 6V<br>2.5<br>12<br>2.2<br>10<br>1.9<br>8 5V I D = 16A<br>1.6<br>I D = 8A<br>6<br>1.3<br>4<br>1<br>2 0.7<br>0 0.4<br>0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **==> picture [506 x 224] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 5. RFig. 7. Input AdmittanceDS(on) Normalized to ID = 8A Value Fig. 6Fig. 8. Transconductance Maximum Drain Current vs.<br>vs. Drain Current Case Temperature<br>50 50<br>2.6 20<br>452.4 VGS = 10V 1845<br>40 TJ = 125ºC 1640 TJ = -40º C<br>2.2 25º C<br>35 35<br>2 14 125º C<br>30 30<br>12<br>1.8<br>25 1025<br>201.6 T 25 J = 125 ººC C 820<br>151.4 -40º C 615<br>101.2 TJ = 25ºC 410<br>51 2 5<br>0<br>0.80 0<br>40 2 4.54 6 5 8 5.510 12 614 166.5 18 207 227.524 -50 0 -255 100 1525 20 5025 7530 35100 4012545 15050<br>VIDG S - Ampere - Volt s TC - Degrees CentigradeI D - Amperes<br> - Normalized - Siemens<br> - Amperes - Amperes<br>I DDS(on) IDg f s<br>R<br>**----- End of picture text -----**<br> © 2006 IXYS All rights reserved **IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS** **Fig. 8. Transconductance** **Fig. 7. Input Admittance** **==> picture [236 x 404] intentionally omitted <==** **----- Start of picture text -----**<br> 28<br>24<br>20<br>TJ = - 40ºC<br> 25ºC<br>16 125ºC<br>12<br>8<br>4<br>0<br>0 2 4 6 8 10 12 14 16 18 20 22 24<br>ID - Amperes<br>Fig. 10. Gate Charge<br>10<br>9 VDSDS = 400V 400V<br> I D = 8A D = 8A = 8A<br>8<br> I G = 10mA G = 10mA = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 10 20 30 40 50 60 70 80<br>QG - NanoCoulombsG - NanoCoulombs - NanoCoulombs<br> - Siemens<br>f s<br>g<br> - Volts<br>GS<br>VGS<br>**----- End of picture text -----**<br> **==> picture [233 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>18<br>16<br>TJ = 125ºC<br>14<br> 25ºC<br> - 40ºC<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>3 3.5 4 4.5 5 5.5 6<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 9. Forward Voltage Drop of Intrinsic Diode** **==> picture [491 x 403] intentionally omitted <==** **----- Start of picture text -----**<br> 50 10<br>45 9 VDSDS = 400V 400V<br> I D = 8A D = 8A = 8A<br>40 8<br> I G = 10mA G = 10mA = 10mA<br>35 7<br>30 6<br>25 5<br>20 TJ = 125ºC 4<br>15 TJ = 25ºC 3<br>10 2<br>5 1<br>0 0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 10 20 30 40 50 60 70<br>VSD - Volts QG - NanoCoulombsG - NanoCoulombs - NanoCoulombs<br>Fig. 12. Maximum Transient Thermal<br>Fig. 11. Capacitance Resistance<br>10,000 1.00<br> f = 1 MHz<br>Ciss<br>1,000<br>0.10<br>Coss<br>100<br>Crss<br>10 0.01<br>0 5 10 15 20 25 30 35 40 0.0001 0.001 0.01 0.1 1 10<br>VDS - Volts Pulse Width - Seconds<br> - Volts<br> - AmperesIS VGS<br> - ºC / W<br>(th)JC<br>R<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. F_16N80P (67) 04-28-06.xls **IXFH 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS** **==> picture [273 x 317] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||| |---|---|---|---|---|---| |TO-247 AD (IXFH) Outline|TO-268 (IXFT) Outline| |A|||r| |th|G)|t|os|f||| |>|tT|1 2 3|SS —F|I| |||oP| |ut||||||||||| |tT|t|Lu| |62| |b|Le|—as| |Dim.|Millimeter|Inches| |Min.|Max.|Min.|Max.| |A|4.7|5.3|.185|.209| |A1|2.2|2.54|.087|.102| |A2|2.2|2.6|.059|.098| |b|1.0|1.4|.040|.055| |b1|1.65|2.13|.065|.084| |b2|2.87|3.12|.113|.123| |C|.4|.8|.016|.031| |D|20.80|21.46|.819|.845| |E|15.75|16.26|.610|.640| |e|5.20|5.72|0.205|0.225| |L|19.81|20.32|.780|.800| |L1|4.50|.177| |∅|P|3.55|3.65|.140|.144| |Q|5.89|6.40|0.232|0.252| |R|4.32|5.49|.170|.216| |S|6.15|BSC|242|BSC| **----- End of picture text -----**<br> **==> picture [104 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> PLUS220 (IXFV) Outline<br>**----- End of picture text -----**<br> **==> picture [136 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> PLUS220SMD (IXFV_S) Outline<br>**----- End of picture text -----**<br> © 2006 IXYS All rights reserved **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 29, 2026
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