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IXFH14N100Q2
Power MOSFET, N Channel, 1 kV, 14 A, 0.9 ohm, TO-247, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- No. of Pins: 3Pins
- Channel Type: N Channel
- Power Dissipation: 500W
- Transistor Mounting: Through Hole
- Transistor Polarity: N Channel
- Power Dissipation Pd: 500W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.9ohm
- Transistor Case Style: TO-247
- Drain Source Voltage Vds: 1kV
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 14A
- Drain Source On State Resistance: 0.9ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 7.11 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## Preliminary Technical Information ## **HiPerFET[TM] Power MOSFETs Q2-Class** N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr ## **IXFH14N100Q2** **V = 1000V** DSS **I = 14A** D25 **R ≤ 950m Ω** DS(on) **t ≤ 300ns** rr ## **TO-247 (IXFH)** |**Symbol**<br>~~——~~|**Test Conditions**<br>**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**| |---|---|---|---| |**VDSS**|TJ= 25°C to 150°C|1000|V| |**VDGR**|TJ= 25°C to 150°C, RGS= 1MΩ|1000|V| |**VGSS**|Continuous|±30|V| |**VGSM**|Transient|±40|V| |**ID25**|TC= 25°C|14|A| |**IDM**|TC= 25°C, pulse width limited by TJM|56|A| |**IA**|TC= 25°C|14|A| |**EAS**|TC= 25°C|2.5|J| |**dV/dt**|IS ≤IDM, VDD ≤VDSS, TJ ≤150°C|20|V/ns| |**PD**|TC= 25°C|500|W| |**TJ**|-55 ... +150|-55 ... +150|°C| |**TJM**|150|150|°C| |**Tstg**|-55 ... +150|-55 ... +150|°C| |**TL**|1.6mm (0.063 in) from case for 10s|300|°C| |**Md**|Mounting torque|1.13/10 Nm/lb.in.|1.13/10 Nm/lb.in.| |**Weight**||6|g| **==> picture [116 x 20] intentionally omitted <==** **----- Start of picture text -----**<br> G ES ae (TAB)<br>D S a<br>**----- End of picture text -----**<br> G = Gate D = Drain S = Source TAB = Drain ## **Features** > e Double metal process for low gate resistance International standard package Epoxy meet UL 94 V-0, flammability classification Avalanche energy and current rated Fast intrinsic Rectifier ## **Applications** ## DC-DC converters |**Symbol**<br>(T= 25°C, unless otherwise specified)<br>**Min. Typ.**|**Min. Typ. Max.**|**Max.**| |---|---|---| |(TJ= 25°C, unless otherwise specified)<br>**Min. Typ.**|**Min. Typ.** **Max.**|**Max.**| |**VDSS**<br>VGS= 0V, ID= 250μA<br>1000<br>**VGS(th)**<br>VDS= VGS, ID= 4mA<br>3.0 5.5|3.0 5.5|V<br>3.0 5.5<br>V| |**IGSS**<br>VGS=±30V, VDS= 0V<br>±|±|±200<br>nA| |**IDSS**<br>VDS= VDSS<br>25<br>VGS= 0V<br>TJ= 125°C<br>1 mA|25<br>1 mA|25<br>μA<br>1 mA| |**RDS(on)**<br>VGS= 10V, ID= 0.5 • ID25,Note 1<br>950|950|950<br>mΩ| Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers Pulse generation Laser drivers ## **Advantages** Easy to mount Space savings High power density DS99073A(5/08) © 2008 IXYS CORPORATION, All rights reserved **IXFH14N100Q2** **==> picture [543 x 413] intentionally omitted <==** **----- Start of picture text -----**<br> Symbol Test Conditions Characteristic Values<br>° TO-247 (IXFH) Outline<br>(TJ = 25 C, unless otherwise specified) Min. Typ. Max.<br>gfs VDS = 10V, ID = 0.5 • ID25, Note 1 15 28 S<br>Ciss 2800 pF<br>Coss VGS = 0V, VDS = 25V, f = 1MHz 287 pF 1 2 3 ∅ P<br>Crss 100 pF<br>td(on) Resistive Switching Times 12 ns<br>tr VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 10 ns<br>td(off) RG = 2Ω (External) 28 ns<br>tf 12 ns e<br>Q 83 nC Terminals: 1 - Gate 2 - Drain<br>g(on)<br>Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 20 nC Dim. Millimeter Inches<br>Qgd 40 nC Min. Max. Min. Max.<br>A 4.7 5.3 .185 .209<br>RthJC 0.25 °C/W A1 2.2 2.54 .087 .102<br>RthCK 0.21 °C/W Ab 2 1.0 2.2 1.4 2.6 .040 .059 .055 .098<br>b1 1.65 2.13 .065 .084<br>b 2 2.87 3.12 .113 .123<br>C .4 .8 .016 .031<br>D 20.80 21.46 .819 .845<br>E 15.75 16.26 .610 .640<br>e 5.20 5.72 0.205 0.225<br>Source-Drain Diode L 19.81 20.32 .780 .800<br>Symbol Test Conditions Characteristic Values L1 4.50 .177<br>(TJ = 25°C, unless otherwise specified) Min. Typ. Max. ∅Q P 5.89 3.55 3.65 6.40 0.232 0.252 .140 .144<br>IS VGS = 0V 14 A R 4.32 5.49 .170 .216<br>ISM Repetitive, pulse width limited by TJM 56 A<br>VSD IF = IS, VGS = 0 V, Note 1 1.5 V<br>tQrrRM IF = 25A, -di/dt = 100 A/μs, VR = 100 V 300 ns 0.8 μC<br>IRM 7 A<br>**----- End of picture text -----**<br> Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. ## **PRELIMINARY TECHNICAL INFORMATION** The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 **IXFH14N100Q2** ## **Fig. 1. Output Characteristics @ 25ºC** **==> picture [241 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 14<br>VGS = 10V<br>12<br>7V<br>10<br>8<br>6<br>6V<br>4<br>2<br>5V<br>0<br>0 2 4 6 8 10 12 14<br>VDS - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> ## **Fig. 3. Output Characteristics @ 125ºC** **==> picture [244 x 380] intentionally omitted <==** **----- Start of picture text -----**<br> 14<br>VGS = 10V<br>12 7V<br>10<br>6V<br>8<br>6<br>4<br>2<br>5V<br>0<br>0 4 8 12 16 20 24 28<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to 0.5 ID25 Value vs. ID<br>2.6<br>2.4 V GS = 10V TJ = 125ºC<br>2.2<br>2.0<br>1.8<br>1.6<br>1.4<br>1.2 TJ = 25ºC<br>1.0<br>0.8<br>0 3 6 9 12 15 18 21 24 27<br>I D - Amperes<br> - Amperes<br>D<br>I<br> - Normalized<br>D S (on)<br>R<br>**----- End of picture text -----**<br> **Fig. 2. Extended Output Characteristics @ 25ºC** **==> picture [244 x 382] intentionally omitted <==** **----- Start of picture text -----**<br> 27<br>VGS = 10V<br>24<br> 8V<br>21<br>18<br>7V<br>15<br>12<br>9<br>6V<br>6<br>3<br>5V<br>0<br>0 3 6 9 12 15 18 21 24 27 30<br>VDS - Volts<br>Fig. 4. RDS(on) Normalized to 0.5 ID25 Value vs.<br>Junction Temperature<br>3.2<br>VGS = 10V<br>2.8<br>2.4<br>2.0 I D = 14A<br>1.6 I D = 7A<br>1.2<br>0.8<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Amperes<br>D<br>I<br> - Normalized<br>D S (on)<br>R<br>**----- End of picture text -----**<br> **Fig. 6. Drain Current vs. Case Temperature** **==> picture [240 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> © 2008 IXYS CORPORATION, All rights reserved **IXFH14N100Q2** ## **Fig. 7. Input Admittance** **==> picture [242 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>18<br>16<br>14<br>12 TJ = 125ºC<br> 25ºC<br>10 - 40ºC<br>8<br>6<br>4<br>2<br>0<br>4.0 4.5 5.0 5.5 6.0 6.5 7.0<br>VGS - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **Fig. 9. Source Current vs. Source-To-Drain** **Voltage** **==> picture [240 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 45<br>40<br>35<br>30<br>25<br>20<br>15 TJ = 125ºC<br>10 T J = 25ºC<br>5<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3<br>VSD - Volts<br> - Amperes<br>S<br>I<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **==> picture [242 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>Ciss<br>1000<br>Coss<br>100<br>Crss<br>f = 1MHz<br>10<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br>Capacitance - pF<br>**----- End of picture text -----**<br> ## **Fig. 8. Transconductance** **==> picture [244 x 382] intentionally omitted <==** **----- Start of picture text -----**<br> 28<br>T J = - 40ºC<br>24<br>20<br>25ºC<br>16<br>12 125ºC<br>8<br>4<br>0<br>0 4 8 12 16 20 24 28<br>I D - Amperes<br>Fig. 10. Gate Charge<br>10<br>9 V DS = 500V<br>I D = 7A<br>8 I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 10 20 30 40 50 60 70 80 90<br>Q G - nanoCoulombs<br> - Siemens<br>f s<br>g<br> - Volts<br>G S<br>V<br>**----- End of picture text -----**<br> **Fig. 12. Maximum Transient Thermal Impedance** **==> picture [255 x 162] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001<br>0.01 0.1 1 10 100 1000<br>Pulse Width - milliseconds<br>(ºC/W)<br> -<br>(th) J C<br>Z<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_14N100Q2 (7F)5-28-08-B
Updated at February 9, 2023
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