IXFH12N90P

Power MOSFET, N Channel, 900 V, 12 A, 0.9 ohm, TO-247, Through Hole

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Manufacturer: IXYS SEMICONDUCTOR
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:900V; On Resistance Rds(on):0.9ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Di
MSL: -
SVHC: Lead (21-Jan-2025)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: -
Qualification: -
Power Dissipation: 380W
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-247
Drain Source Voltage Vds: 900V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 12A
Drain Source On State Resistance: 0.9ohm
Gate Source Threshold Voltage Max: 3.5V

Delivery and price
Units per pack	300
Price	4.71 €
Current stock	10+
Lead time	30 days

Datasheet

## **Polar[TM ] HiPerFET[TM] Power MOSFET** 

## **IXFH12N90P IXFV12N90P IXFV12N90PS** 

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 

|||||~~|~~|
|---|---|---|---|---|
|**Symbol**<br>**VDSS**<br>**VDGR**|**Test Conditions**<br>TJ = 25C to 150C<br>TJ = 25C to 150C, RGS= 1M|**Maximum Ratin**<br>900<br>900|**Maximum Ratings**|V<br>V<br>~~|~~|
|**VGSS**<br>**VGSM**|Continuous<br>Transient|30<br>40||V<br>V|
|**ID25**|TC = 25C|12||A|
|**IDM**|TC = 25C, Pulse Width Limited by TJM|24||A|
|**IA**|TC = 25C|6||A|
|**EAS**|TC = 25C|500||mJ|
|**dv/dt**|IS<br>IDM,  VDD VDSS, TJ 150C|15||V/ns|
|**PD**<br>TC = 25C<br>380<br>W<br>**TJ**<br>-55 ... +150<br>C<br>**TJM**<br>150<br>C<br>**Tstg**<br>-55 ... +150<br>C<br>**TL**<br>Maximum Lead Temperature for Soldering<br>300<br>C<br>~~OCre~~|||||
|**TSOLD**|Plastic Body for 10s|260||C|
|**Md**|Mounting torque (TO-247)<br>1.13/10|1.13/10|Nm/lb.in||
|**FC**|Mounting force (PLUS220)<br>11..65/2.5..14.6|11..65/2.5..14.6||N/lb|
|**Weight**|TO-247<br>PLUS220 types|6<br>4                        g|4                        g|g<br>4                        g|



**V =   900V DSS I =   12A D25 R  1.0  DS(on) t  300ns rr** 

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**----- Start of picture text -----**<br>
PLUS220 (IXFV)<br>><br>G<br>DS<br>D (Tab)<br>PLUS220SMD(IXFV_S)<br>G<br>S<br>D (Tab)<br>TO-247 (IXFH)<br>G<br>D<br>S<br>— D (Tab) “2A<br>G =  Gate D      = Drain<br>S =  Source Tab  = Drain<br>**----- End of picture text -----**<br>


## **Features** 

- International Standard Packages 

- Avalanche Rated 

- Low Package Inductance 

- Fast Intrinsic Diode 

## **Advantages** 

|**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min.      Typ.      Max.**|**Min.      Typ.      Max.**|**Min.      Typ.      Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.      Typ.      Max.**|**Min.      Typ.      Max.**|**Min.      Typ.      Max.**|
|**BVDSS**<br>VGS = 0V, ID= 1mA<br>900|~~|~~|V|
|**VGS(th)**<br>VDS = VGS, ID= 1mA<br>3.5<br>6.5|6.5<br>~~|~~<br>~~|~~|6.5<br>V|
|**IGSS**<br>VGS =30V, VDS= 0V<br>||100<br>nA|
|**IDSS**<br>VDS = VDSS, VGS= 0V<br>25<br>TJ= 125C<br>1   mA|25<br>1   mA<br>~~=~~|25<br>A<br>1   mA|
|**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25,  Note 1|1.0<br>~~_—_~~|1.0|



- Easy to Mount 

- Space Savings 

- High Power Density 

## **Applications:** 

- Switch-Mode and Resonant-mode Power Supplies 

- DC-DC Converters 

- Laser Drivers 

- AC and DC Motor Drives 

- Robotics and Servo Controls 

DS100056A(11/15) 

© 2015 IXYS CORPORATION, All Rights Reserved 

## **IXFH12N90P   IXFV12N90P IXFV12N90PS** 

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**----- Start of picture text -----**<br>
|||||||||||
|---|---|---|---|---|---|---|---|---|---|
|Symbol|Test Conditions                                            Characteristic Values|
|(TJ = 25C, Unless Otherwise Specified)|Min.        Typ.      Max.|PLUS220 Outline|
|3|
|gfs|VDS|= 20V, ID = 0.5 • ID25, Note 1                  5.0            8.2|S|
|RGi|Gate input resistance|1.7||ioye|
|Ciss|3080|pF|
|CCossrss|VGS|= 0V, VDS = 25V, f = 1MHz|200            33|pFpF|uti|HeibTTF1ilil|Hhi}||:|rc|
|t|32|ns|i|
|d(on)|Resistive Switching Times|
|t|34                   ns|
|r|VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25|1. GATE|
|ttd(off)|RG  = 2 (External)|50                                           68|ns              ns|LLto|2, 4. DRAIN3. SOURCE|
|f|
|Q|56|nC|
|g(on)|SVM|
|[sym ||INCHES|
|Qgs|VGS|= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25|18|nC|
|Qgd|27|nC|
|RthJC|0.33|C/W|
|R|a|thCS|(TO-247, PLUS220)|0.25|C/W|13.00|
|10.00|
|LOOBSC|
|Symbol|Test Conditions                                            Characteristic Values|13.00|
|(TJ = 25C, Unless Otherwise Specified|Min.         Typ.      Max.|
|IS|VGS = 0V|12|A|
|ISM|Repetitive, pulse width limited by TJM|48    A|TO-247 Outline|
|VSD|IF = IS, VGS = 0V, Note 1|1.5|V|=|E|1|t|4|
|trr|300|ns|JeyedeRoRo|i|=:|
|QRM|IF = 6A, -di/dt = 100A/s|0.9|C|PP|
|IRM|VR = 100V, VGS|= 0V|7.8|A|D|"|||;|Fy|
|!|5u1u1|
|L|
|Note 1:  Pulse test, t  300s; duty cycle, d  2%.|

**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
||||||||
|---|---|---|---|---|---|---|
|TO-247 Outline|
|=|E|1|t|4|er|A|
|JeyedeRoRo|i|=:|HW|
|PP|
|D|"|||;|Fy|
|!|5u1u1|
|L|
|v1|||al|e|
|>|||L|e|"|
|1. GATE|
|2. DRAIN|
|3. SOURCE|
|Dim.|Millimeter|Inches|
|Min.|Max.|Min.|Max.|
|A|4.7|5.3|.185|.209|
|A1|2.2|2.54|.087|.102|
|A2|2.2|2.6|.059|.098|
|b|1.0|1.4|.040|.055|
|b1|1.65|2.13|.065|.084|
|b2|2.87|3.12|.113|.123|
|C|.4|.8|.016|.031|
|D|20.80|21.46|.819|.845|
|E|15.75|16.26|.610|.640|
|e|5.20|5.72|0.205|0.225|
|L|19.81|20.32|.780|.800|
|L1|4.50|.177|
|P|3.55|3.65|.140|.144|
|Q|5.89|6.40|0.232|0.252|
|R|4.32|5.49|.170|.216|
|S|6.15     BSC|242    BSC|

**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
PLUS220SMD Outline<br>=. is eu<br>|<br>| p |<br>7) rs is<br>oso oy \ T<br>ytLTi : Ton<br>tt His ef“a!ou I}<br>Lgil-oril | tT wll<br>Ps<br>rated tol 1. GATE<br>2, 4. DRAIN<br>3. SOURCE<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXFH12N90P   IXFV12N90P IXFV12N90PS** 

**Fig. 1. Output Characteristics @ TJ = 25ºC** 

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12<br>V GS = 10V<br>         8V<br>10<br>8 7V<br>6<br>4 6V<br>2<br>5V<br>0<br>0 1 2 3 4 5 6 7 8 9 10 11<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 3. Output Characteristics @ TJ = 125ºC** 

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12<br>VGS = 10V<br>         8V<br>10<br>8<br>7V<br>6<br>4<br>2 6V<br>0<br>0 2 4 6 8 10 12 14 16 18 20 22 24 26<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 6A Value vs.<br> Drain Current<br>2.8<br>VGS = 10V<br>TJ = 125ºC<br>2.4<br>2.0<br>1.6<br>1.2 TJ = 25ºC<br>0.8<br>0 2 4 6 8 10 12 14 16 18 20 22 24<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>24<br>V GS = 10V<br>         8V<br>20<br>16<br>12 7V<br>8<br>6V<br>4<br>5V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 4. RDS(on) Normalized to ID = 6A Value vs. Junction Temperature** 

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**----- Start of picture text -----**<br>
3.2<br>VGS = 10V<br>2.8<br>2.4<br>I D = 12A<br>2.0<br>I D = 6A<br>1.6<br>1.2<br>0.8<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br>Fig. 6. Maximum Drain Current vs.<br>Case Temperature<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


© 2015 IXYS CORPORATION, All Rights Reserved 

**IXFH12N90P   IXFV12N90P IXFV12N90PS** 

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Fig. 7. Input Admittance<br>14<br>12<br>10 TJ = 125ºC<br>          25ºC<br>        - 40ºC<br>8<br>6<br>4<br>2<br>0<br>4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5<br>VGS - Volts<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>35<br>30<br>25<br>20<br>15<br>10 TJ = 125ºC<br>TJ  = 25ºC<br>5<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1<br>VSD - Volts<br>Fig. 11. Capacitance<br>10,000<br>Ciss<br>1,000<br>100 Coss<br>f = 1 MHz  Crss<br>10<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br> - Amperes<br>ID<br> - Amperes<br>IS<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


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Fig. 8. Transconductance<br>14<br>T J = - 40ºC<br>12<br>10 25ºC<br>8 125ºC<br>6<br>4<br>2<br>0<br>0 2 4 6 8 10 12 14<br>ID - Amperes<br>Fig. 10. Gate Charge<br>16<br> VDS = 450V<br>14<br> I D = 6A<br>12  I G = 10mA<br>10<br>8<br>6<br>4<br>2<br>0<br>0 10 20 30 40 50 60 70 80<br>QG - NanoCoulombs<br> - Siemens<br>f s<br>g<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br>


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Fig. 12. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS REF: F_12N90P(65)10-22-08 

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Updated at April 27, 2026

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