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IXFH12N100P
Power MOSFET, N Channel, 1 kV, 12 A, 1.05 ohm, TO-247, Through Hole
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- SVHC: Lead (21-Jan-2025)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: Polar HiPerFET
- Qualification: -
- Power Dissipation: 436W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-247
- Drain Source Voltage Vds: 1kV
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 12A
- Drain Source On State Resistance: 1.05ohm
- Gate Source Threshold Voltage Max: 6.5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 4.02 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
## **Polar[TM ] HiPerFET[TM] IXFH12N100P Power MOSFETs IXFV12N100P IXFV12N100PS** N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier |**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**| |---|---|---|---| |**VDSS**|TJ = 25°C to 150°C|1000|V| |**VDGR**|TJ = 25°C to 150°C, RGS= 1MΩ|1000|V| |**VGSS**|Continuous|±30|V| |**VGSM**|Transient|±40|V| |**ID25**|TC = 25°C|12|A| |**IDM**|TC = 25°C, Pulse Width Limited by TJM|24|A| |**IAR**|TC = 25°C|6|A| |**EAS**|TC = 25°C|750|mJ| |**dv/dt**|IS<br>≤IDM, VDD ≤VDSS, TJ ≤150°C|15|V/ns| |**PD**|TC = 25°C|463|W| |**TJ**||-55 ... +150|°C| |**TJM**||150|°C| |**Tstg**||-55 ... +150|°C| |**TL**|Maximum Lead Temperature for Soldering|300|°C| |**TSOLD**|Plastic Body for 10s|260|°C| |**Md**|Mounting Torque (TO-247)<br>1.13/10|1.13/10|Nm/lb.in.| |**FC**|Mounting Force (PLUS220) 11..65/2.5..14.6|11..65/2.5..14.6|N/lb.| |**Weight**|TO-247|6|g| ||PLUS220 types|4 g|4 g| **V = 1000V DSS I = 12A D25 R ≤ 1.05 Ω DS(on) t ≤ 300ns rr** **==> picture [108 x 245] intentionally omitted <==** **----- Start of picture text -----**<br> PLUS220 (IXFV)<br>GDS<br>D (Tab)<br>PLUS220SMD (IXFV_S)<br>G<br>S<br>D (Tab)<br>TO-247 (IXFH)<br>G<br>D S D (Tab)<br>**----- End of picture text -----**<br> G = Gate D = Drain S = Source Tab = Drain ## **Features** Low RDS(on) and QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier ## **Advantages** |**Symbol**<br>(T= 25°C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25°C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= 1mA<br>1000<br>~~|~~|~~a~~<br>~~|~~|V| |**VGS(th)**<br>VDS = VGS, ID= 1mA<br>3.5<br>6.5<br>~~|~~<br>~~|~~|6.5<br>~~a~~<br>~~|~~<br>~~|~~|6.5<br>V| |**IGSS**<br>VGS =±30V, VDS= 0V<br>±<br>~~|~~<br>~~|~~|±<br>~~|~~<br>~~|~~|±100<br>nA| |**IDSS**<br>VDS = VDSS, VGS= 0V<br>20<br>TJ= 125°C<br>1.0 mA<br>~~|~~|20<br>1.0 mA<br>~~|_~~|20<br>μA<br>1.0 mA| |**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25, Note 1<br>1.05<br>|1.05<br>~~_~~<br>~~=~~|1.05<br>Ω| High Power Density Easy to Mount Space Savings ## **Applications** Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters } Laser Drivers AC and DC Motor Drives : Robotics and Servo Controls DS99920B(03/11) © 2011 IXYS CORPORATION, All Rights Reserved ## **IXFH12N100P IXFV12N100P IXFV12N100PS** |(TC Unless Otherwise Specified)||| |---|---|---| |(TJ= 25°C Unless Otherwise Specified)**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**gfs**<br>VDS = 20V, ID= 0.5 • ID25, Note 1 4.8 8.8|, Note 1 4.8 8.8|S| |**RGi**<br>Gate Input Resistance<br>1.9|1.9|Ω| |**Ciss**<br>4080<br>**Coss**<br>VGS = 0V, VDS= 25V, f = 1MHz<br>246<br>**Crss**<br>40|4080<br>246<br>40|pF<br>pF<br>pF| |**td(on)**<br>30<br>**tr**<br> 25 ns<br>**td(off)**<br>60<br>**tf**<br>36<br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 2Ω(External)|30<br>25 ns<br>60<br>36|ns<br>25 ns<br>ns<br>ns| |**Qg(on)**<br>80<br>**Qgs**<br>VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>24<br>**Qgd**<br>35|80<br>24<br>35|nC<br>nC<br>nC| |**RthJC**<br>**RthCS**<br>(TO-247&PLUS220)<br>0.25<br>~~a~~|0.27<br>0.25<br>~~a~~|0.27 °C/W<br>°C/W<br>~~a~~| **==> picture [76 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> PLUS220 Outline<br>**----- End of picture text -----**<br> |T= 25C Unless Otherwise Specified)**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |TJ= 25°C Unless Otherwise Specified)**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**IS**<br>VGS= 0V|12|12<br>A| |**ISM**<br>Repetitive, Pulse Width Limited by TJM||48 A| |**VSD**<br>IF= IS, VGS= 0V, Note 1|1.5|1.5<br>V| |**trr**<br>**QRM**<br>0.8<br>**IRM**<br>7.9<br>IF= 6A, -di/dt = 100A/μs<br>VR= 100V, VGS = 0V|300<br>0.8<br>7.9|300 ns<br>μC<br>A| Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. **==> picture [96 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> PLUS220SMD Outline<br>**----- End of picture text -----**<br> |∅P<br> **TO-247 Outline**<br> **1 2 3**<br>~~E~~<br>~~A~~2<br>~~Pa~~<br>4<br>~~Tt~~o~~ais~~<br>~~®t Of~~<br>D “| ; FT<br>~~u1~~<br>! ~~7~~|∅P<br> **TO-247 Outline**<br> **1 2 3**<br>~~E~~<br>~~A~~2<br>~~Pa~~<br>4<br>~~Tt~~o~~ais~~<br>~~®t Of~~<br>D “| ; FT<br>~~u1~~<br>! ~~7~~|∅P<br> **TO-247 Outline**<br> **1 2 3**<br>~~E~~<br>~~A~~2<br>~~Pa~~<br>4<br>~~Tt~~o~~ais~~<br>~~®t Of~~<br>D “| ; FT<br>~~u1~~<br>! ~~7~~|∅P<br> **TO-247 Outline**<br> **1 2 3**<br>~~E~~<br>~~A~~2<br>~~Pa~~<br>4<br>~~Tt~~o~~ais~~<br>~~®t Of~~<br>D “| ; FT<br>~~u1~~<br>! ~~7~~|∅P<br> **TO-247 Outline**<br> **1 2 3**<br>~~E~~<br>~~A~~2<br>~~Pa~~<br>4<br>~~Tt~~o~~ais~~<br>~~®t Of~~<br>D “| ; FT<br>~~u1~~<br>! ~~7~~|∅P<br> **TO-247 Outline**<br> **1 2 3**<br>~~E~~<br>~~A~~2<br>~~Pa~~<br>4<br>~~Tt~~o~~ais~~<br>~~®t Of~~<br>D “| ; FT<br>~~u1~~<br>! ~~7~~|∅P<br> **TO-247 Outline**<br> **1 2 3**<br>~~E~~<br>~~A~~2<br>~~Pa~~<br>4<br>~~Tt~~o~~ais~~<br>~~®t Of~~<br>D “| ; FT<br>~~u1~~<br>! ~~7~~|∅P<br> **TO-247 Outline**<br> **1 2 3**<br>~~E~~<br>~~A~~2<br>~~Pa~~<br>4<br>~~Tt~~o~~ais~~<br>~~®t Of~~<br>D “| ; FT<br>~~u1~~<br>! ~~7~~||~~a~~<br>+f| |---|---|---|---|---|---|---|---|---|---| |L|||||||||| ||||||||||| |||i|~~e~~<br>|<br>b~~2~~<br>L~~O~~||||||c| |Terminals: 1 - Gate|||||||2 - Drain||| |Dim.<br>A<br>A1<br>A2<br>b<br>b1<br>b~~2~~||3 - Source<br>Millimeter<br>Min.<br>Max.<br>4.7<br>5.3<br>2.2<br>2.54<br>2.2<br>2.6<br>1.0<br>1.4<br>1.65<br>2.13<br>2.87<br>3.12|||||Inches<br>Min.<br>Max.<br>.185<br>.209<br>.087<br>.102<br>.059<br>.098<br>.040<br>.055<br>.065<br>.084<br>.113<br>.123||| |C<br>D<br>E<br>e<br>L<br>L1||.4<br>20.80<br>15.75<br>5.20<br>19.81||.8<br>21.46<br>16.26<br>5.72<br>20.32<br>4.50||.016<br>.819<br>.610<br>0.205 <br>.780|||.031<br>.845<br>.640<br> 0.225<br>.800<br>.177| |∅P||3.55||3.65|||.140||.144| |Q||5.89||6.40||0.232|||0.252| |R||4.32||5.49|||.170||.216| |S||6.15||BSC|||242||BSC| IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 **IXFH12N100P IXFV12N100P IXFV12N100PS** **==> picture [263 x 211] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25ºC<br>12<br>V GS = 10V<br> 8V<br>10<br>7V<br>8<br>6V<br>6<br>4<br>2 5V<br>0<br>0 1 2 3 4 5 6 7 8 9 10 11 12<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [263 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>24<br>VGS = 10V<br> 8V<br>20<br>16 7V<br>12<br>6V<br>8<br>4 5V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 3. Output Characteristics @ TJ = 125ºC** **Fig. 4. RDS(on) Normalized to ID = 6A Value vs. Junction Temperature** **==> picture [528 x 390] intentionally omitted <==** **----- Start of picture text -----**<br> 12 3.2<br>VGS = 10V<br> 7V 2.8 V GS = 10V<br>10<br>2.4<br>8<br>6V 2.0 I D = 12A<br>6<br>1.6 I D = 6A<br>4 5V<br>1.2<br>2<br>0.8<br>0 0.4<br>0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 6A Value vs. Fig. 6. Maximum Drain Current vs.<br> Drain Current Case Temperature<br>2.8 14<br>2.6<br>VGS = 10V TJ = 125ºC 12<br>2.4<br>2.2 10<br>2.0<br>8<br>1.8<br>6<br>1.6<br>1.4 4<br>1.2 T J = 25ºC<br>2<br>1.0<br>0.8 0<br>0 2 4 6 8 10 12 14 16 18 20 22 24 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br> © 2011 IXYS CORPORATION, All Rights Reserved **IXFH12N100P IXFV12N100P IXFV12N100PS** **==> picture [536 x 427] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance Fig. 8. Transconductance<br>16 18<br>TJ = - 40ºC<br>14 16<br>14<br>12<br>TJ = 125ºC 25ºC<br> 25ºC 12<br>10 - 40ºC<br>10 125ºC<br>8<br>8<br>6<br>6<br>4<br>4<br>2 2<br>0 0<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 2 4 6 8 10 12 14 16 18<br>VGS - Volts ID - Amperes<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge<br>40 16<br>35 14 V DS = 500V<br> I D = 6A<br>30 12 I G = 10mA<br>25 10<br>20 8<br>T J = 125ºC<br>15 6<br>TJ = 25ºC<br>10 4<br>5 2<br>0 0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 10 20 30 40 50 60 70 80 90 100 110<br>VSD - Volts QG - NanoCoulombs<br> - Siemens<br> - Amperes f s<br>ID g<br> - Volts<br> - AmperesIS VGS<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **==> picture [255 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 10,000<br>C iss<br>1,000<br>Coss<br>100<br>f = 1 MHz C rss<br>10<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> **==> picture [264 x 210] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 12. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_12N100P(75-744)4-01-08-A **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 29, 2026
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