IXFH12N100F

Power MOSFET, N Channel, 1 kV, 12 A, 1.05 ohm, TO-247AD, Through Hole

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Manufacturer: IXYS SEMICONDUCTOR
Product type: Single MOSFETs
No. of Pins: 3Pins
Channel Type: N Channel
Power Dissipation: 300W
Transistor Mounting: Through Hole
Transistor Polarity: N Channel
Power Dissipation Pd: 300W
Rds(on) Test Voltage: 10V
On Resistance Rds(on): 1.05ohm
Transistor Case Style: TO-247AD
Drain Source Voltage Vds: 1kV
Operating Temperature Max: 150°C
Continuous Drain Current Id: 12A
Drain Source On State Resistance: 1.05ohm
Gate Source Threshold Voltage Max: 3V

Delivery and price
Units per pack	250
Price	8.13 €
Current stock	10+
Lead time	30 days

Datasheet

## **HiPerRF[TM]** 

## **Power MOSFETs** 

**F-Class: MegaHertz Switching** 

N-Channel Enhancement Mode Avalanche Rated, Low Q , Low g Intrinsic Rg, High dV/dt, Low trr 

## **IXFH12N100F IXFT12N100F** 

**V =    1000V DSS I =    12A D25 R ≤ 1.05 Ω DS(on) t ≤ 250ns** rr 

## **TO-247 (IXFH)** 

|**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**|
|---|---|---|---|
|**VDSS**|TJ = 25°C to 150°C|1000|V|
|**VDGR**|TJ = 25°C to 150°C, RGS= 1MΩ|1000|V|
|**VGSS**|Continuous|±20|V|
|**VGSM**|Transient|±30|V|
|**ID25**|TC = 25°C|12|A|
|**IDM**<br>TC = 25°C, pulse width limited by TJM<br>48<br>A<br>~~ee~~||||
|**IAR**|TC = 25°C|12|A|
|**EAS**|TC = 25°C|1                      J|1                      J|
|**dV/dt**|IS<br>≤IDM,  di/dt<br>< 100A/μs, VDD ≤VDSS|DSS20               V/ns|20               V/ns|
|T|TJ ≤150°C, RG= 2Ω|||
|**PD**|TC = 25°C|300|W|
|**TJ**||-55 ... +150|°C|
|**TJM**||150|°C|
|**Tstg**||-55 ... +150|°C|
|**TL**|Maximum lead temperature for soldering|300|°C|
|**TSOLD**|Plastic body for 10s|260|°C|
|**Md**|Mounting torque (TO-247)<br>1.13/10|1.13/10|Nm/lb.in.|
|**Weight**|TO-247|6|g|
||TO-268<br>4                        g|4                        g|4                        g|



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## **TO-268 (IXFT)** 

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G<br>S<br>TAB<br>**----- End of picture text -----**<br>


G =  Gate D      = Drain S =  Source TAB  = Drain 

## **Features** 

RF capable MOSFETs Double metal process for low gate resistance 

Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated 

Low package inductance - easy to drive and to protect Fast intrinsic rectifier 

## **Applications** 

DC-DC converters 

|**Symbol**<br>(T= 25°C, unless otherwise specified)<br>**Min.       Typ.     Max.**|**Min.       Typ.     Max.**|**Min.       Typ.     Max.**|
|---|---|---|
|(TJ= 25°C, unless otherwise specified)<br>**Min.       Typ.     Max.**|**Min.       Typ.     Max.**|**Min.       Typ.     Max.**|
|**BVDSS**<br>VGS = 0V, ID= 1mA<br>1000|~~,~~|V<br>~~,~~|
|**VGS(th)**<br>VDS = VGS, ID= 4mA<br>3.0<br>5.5|5.5<br>~~,~~<br>~~a~~|5.5<br>V<br>~~,~~<br>~~a~~|
|**IGSS**<br>VGS =±20V, VDS= 0V<br>±|±<br>~~a~~<br>~~|~~|±100<br>nA<br>~~a~~<br>~~|~~|
|**IDSS**<br>VDS =  VDSS<br>50<br>VGS =  0V<br>TJ= 125°C<br>1.5   mA|50<br>1.5   mA<br>~~|~~|50<br>μA<br>1.5   mA<br>~~|~~|
|**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25,  Note 1<br>1.05|1.05|1.05<br>Ω|



Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers 13.5 MHz industrial applications Pulse generation Laser drivers RF amplifiers 

## **Advantages** 

Space savings High power density 

DS98856A(01/03) 

© 2003 IXYS CORPORATION, All Rights Reserved 

## **IXFH12N100F IXFT12N100F** 

|<br>|<br>|<br>|<br>|
|---|---|---|---|
|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>||||
|(TJ= 25°C unless otherwise specified)**Min.**||**Typ.**|**Max.**|
|**gfs**<br>VDS = 10V, ID= 0.5 • ID25, Note 1<br>8<br><br>||12<br>|S<br>|
|**Ciss**<br>**Coss**<br>**C**|<br>VGS = 0V, VDS= 25V, f = 1MHz<br> <br>|2700<br>305<br>93|pF<br>pF<br>pF|
|**rss**<br>**td(on)**<br> <br>**tr**<br>  <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 2Ω(External)||12<br>9.8<br>31<br>12|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**<br>VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br> <br>**Qgd**<br>||77<br>16<br>42|nC<br>nC<br>nC|
|**RthJC**<br>**RthCS**<br>(TO-247)<br>||<br>0.21|0.42 °C/W<br>°C/W|



|**Source-Drain Diode**<br>**Characteristic Values**<br>|**Source-Drain Diode**<br>**Characteristic Values**<br>|**Source-Drain Diode**<br>**Characteristic Values**<br>|
|---|---|---|
|TJ= 25°C unless otherwise specified)**Min.**|**Typ.**|**Max.**|
|**IS**<br>VGS= 0V||12<br>A|
|**ISM**<br>Repetitive,  pulse width limited by TJM||48<br>A|
|**VSD**<br>IF= IS, VGS= 0V, Note 1||1.5<br>V|
|**trr**<br> <br>**QRM**<br>0.8<br>**IRM**<br>7.0<br>IF= 12A, -di/dt = 100A/μs<br>VR= 100V, VGS = 0V||250 ns<br>μC<br>A|



Note: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 

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**TO-247 (IXFH) Outline** 

|**IXFH12N100F**<br>**IXFT12N100F**||
|---|---|
|Dim.<br>Millimeter<br>Inches<br>Min.<br>Max.<br>Min.<br>Max.<br>A<br>4.7<br>5.3<br>.185<br>.209<br>A1<br>2.2<br>2.54<br>.087<br>.102<br>A2<br>2.2<br>2.6<br>.059<br>.098<br>b<br>1.0<br>1.4<br>.040<br>.055<br>b1<br>1.65<br>2.13<br>.065<br>.084<br>b2<br>2.87<br>3.12<br>.113<br>.123<br>C<br>.4<br>.8<br>.016<br>.031<br>D<br>20.80<br>21.46<br>.819<br>.845<br>E<br>15.75<br>16.26<br>.610<br>.640<br>e<br>5.20<br>5.72<br>0.205 0.225<br>L<br>19.81<br>20.32<br>.780<br>.800<br><br><br><br>e<br>∅P<br>**TO-247 (IXFH) Outline**||
|||
|L1<br>4.50<br>.177<br>∅P<br>3.55<br>3.65<br>.140<br>.144<br>Q<br>5.89<br>6.40<br>0.232 0.252<br>R<br>4.32<br>5.49<br>.170<br>.216<br>S<br>6.15     BSC<br>242    BSC||



## **TO-268 Outline** 

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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Updated at February 9, 2023

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