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IXFH12N100
Power MOSFET, N Channel, 1 kV, 12 A, 1.05 ohm, TO-247, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- No. of Pins: 3Pins
- Channel Type: N Channel
- Power Dissipation: 300W
- Transistor Mounting: Through Hole
- Transistor Polarity: N Channel
- Power Dissipation Pd: 300W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 1.05ohm
- Transistor Case Style: TO-247
- Drain Source Voltage Vds: 1kV
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 12A
- Drain Source On State Resistance: 1.05ohm
- Gate Source Threshold Voltage Max: 4.5V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 5.42 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **HiPerFET[TM] Power MOSFETs** N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS[TM] Family |**IXFH/IXFM **|**10 **|**N100**|**V**DSS<br>**1000 V**||**I**D25<br>**10 A **|**R**DS(on)<br> **1.20Ω**| |---|---|---|---|---|---|---| |**IXFH/IXFM **|**12 **|**N100**|**1000 V**||**12 A **|**1.05Ω**| ||||**t**rr **≤250 ns**||**250 ns**|| |**Symbol**|**Test Conditions**|**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**| |---|---|---|---|---| |**VDSS**|TJ = 25°C to 150°C||1000|V| |**VDGR**|TJ = 25°C to 150°C; RGS= 1 MΩ||1000|V| |**VGS**<br>**VGSM**|Continuous<br>Transient||±20<br>±30|V<br>V| |**ID25**|TC = 25°C|10N100|10|A| |||12N100|12|A| |**IDM**|TC = 25°C, pulse width limited by TJM|10N100<br>12N100|40<br>48|A<br>A| |**IAR**|TC = 25°C|10N100|10|A| |||12N100|12|A| |**EAR**<br>TC = 25°C<br>30<br>mJ<br>**dv/dt**<br>IS ≤IDM, di/dt≤100 A/µs, VDD ≤VDSS,<br>5<br>V/ns<br>ee||||| ||TJ ≤150°C, RG= 2Ω|||| |**PD**|TC = 25°C||300|W| |**TJ**||-55 ... +150|-55 ... +150|°C| |**TJM**|||150|°C| |**Tstg**<br>**TL**|1.6 mm (0.062 in.) from case for 10 s|-55 ... +150|-55 ... +150<br>300|°C<br>°C| |**Md**|Mounting torque|1.13/10 Nm/lb.in.|1.13/10 Nm/lb.in.|| |**Weight**||TO-204 = 18 g, TO-247 = 6 g||| ## **TO-247 AD (IXFH)** **==> picture [22 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> (TAB)<br>**----- End of picture text -----**<br> ## **TO-204 AA (IXFM)** **==> picture [110 x 40] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>D<br>G = Gate, D = Drain,<br>S = Source, TAB = Drain<br>**----- End of picture text -----**<br> ## **Features** International standard packages Low RDS (on) HDMOS[TM] process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier ## **Symbol Test Conditions** ## **Characteristic Values** |||(TJ= 25°C, unless otherwise specified)|C, unless otherwise specified)|C, unless otherwise specified)|C, unless otherwise specified)|C, unless otherwise specified)|C, unless otherwise specified)| |---|---|---|---|---|---|---|---| ||||**min.**||**typ.**|**max.**|| |**VDSS**|VGS = 0 V, ID= 3 mA||1000||||V| |**VGS(th)**|VDS = VGS, ID= 4 mA||2.0|||4.5|V| |**IGSS**|VGS =±20 VDC, VDS= 0|||||±100|nA| |**IDSS**|VDS = 0.8 • VDSS|TJ=<br>25°C||||250|µA| ||VGS = 0 V|TJ= 125°C||||1|mA| |**RDS(on)**|VGS = 10 V, ID= 0.5 • ID25|10N100||||1.20|Ω| |||12N100||||1.05|Ω| ||Pulse test, t≤300µs, duty cycle|s, duty cycled≤2 %|||||| ## **Applications** DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Low voltage relays ## **Advantages** Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density © 2004 IXYS All rights reserved DS91531F(01/04) **IXFH 10N100 IXFH 12N100 IXFM 10N100 IXFM 12N100** |**Symbol**|**Test**|**Conditions**|**Conditions**|**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)|**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)|**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)|**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)|**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)|**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)| |---|---|---|---|---|---|---|---|---|---| ||||||**min.**||**typ.**|**max.**|| |**gfs**|VDS|= 10 V; ID= 0.5 • ID25, pulse test|||6||10||S| |**Ciss**|||||||4000||pF| |**Coss**||VGS|= 0 V, VDS= 25 V, f = 1 MHz||||310||pF| |**Crss**|||||||70||pF| |**td(on)**|||||||21|50|ns| |**tr**||VGS|= 10 V, VDS= 0.5|• VDSS, ID= 0.5 • ID25|||33|50|ns| |**td(off)**||RG= 2Ω(External),|||||62|100|ns| |**tf**|||||||32|50|ns| |**Qg(on)**|||||||122|155|nC| |**Qgs**||VGS|= 10 V, VDS= 0.5|• VDSS, ID= 0.5 • ID25|||30|45|nC| |**Qgd**|||||||50|80|nC| |**RthJC**||||||||0.42|K/W| |**RthCK**|||||||0.25||K/W| ## **TO-247 AD (IXFH) Outline** |||||1 2|3|||| |---|---|---|---|---|---|---|---|---| |Terminals:||1||- Gate||2 -|Drain|| |||3||- Source||Tab - Drain||| ||Dim.|||Millimeter|||Inches|| |||||Min.||Max.|Min.|Max.| ||A|||4.7||5.3|.185|.209| ||A1|||2.2||2.54|.087|.102| ||A2|||2.2||2.6|.059|.098| ||b|||1.0||1.4|.040|.055| ||b1|||1.65||2.13|.065|.084| ||b2|||2.87||3.12|.113|.123| ||C|||.4||.8|.016|.031| ||D|||20.80|21.46||.819|.845| ||E|||15.75|16.26||.610|.640| ||e|||5.20||5.72|0.205|0.225| ||L|||19.81|20.32||.780|.800| ||L1|||||4.50||.177| ||∅P|||3.55||3.65|.140|.144| ||Q|||5.89||6.40|0.232|0.252| ||R|||4.32||5.49|.170|.216| ||S|||6.15|BSC||242|BSC| |**Source-Drain**|**Diode**||**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**||∅P|3.55|3.65|.140|.144|| |---|---|---|---|---|---|---|---|---|---|---|---|---|---| |||(TJ= 25°C,|unless otherwise specified)|||||Q|5.89|6.40|0.232|0.252|| |**Symbol**|**Test Conditions**||**min.**|**typ.**|**max.**|||R|4.32|5.49|.170|.216|| |||||||||S|6.15|BSC|242|BSC|| |**IS**|VGS = 0 V|10N100|||10|A|||||||| |||12N100|||12|A|||||||| |||13N100|||12.5|A|**TO-204 AA (IXFM) Outline**||||||| |**ISM**|Repetitive;|10N100|||40|A|||||||| ||pulse width limited by TJM|12N100|||48|A|||||||| |||13N100|||50|A|||||||| |**VSD**|IF= IS, VGS= 0 V,||||1.5|V|||||||| ||Pulse test, t≤300µs, duty|cycled≤2 %|||||||||||| |**trr**|IF= IS<br>-di/dt = 100 A/µs,|TJ=<br>25°C<br>TJ= 125°C|||250<br>400|ns<br>ns|||||||| |**QRM**|VR= 100 V|TJ=<br>25°C<br>TJ= 125°C||1<br>2||µC<br>µC|Pins||1 - Gate<br>2 - Source<br>Case - Drain||||| |**IRM**||TJ=<br>25°C<br>TJ= 125°C||10<br>15||A<br>A||Dim.<br>A|Millimeter<br>Min.<br>Max.<br>6.4<br>11.4||Inches<br>Min.<br>Max.<br>.250<br>.450||| |||||||||A1||3.42||.135|| |||||||||∅b|.97|1.09|.038|.043|| |||||||||∅D||22.22||.875|| |||||||||e|10.67|11.17|.420|.440|| |||||||||e1|5.21|5.71|.205|.225|| |||||||||L|7.93||.312||| |||||||||∅p|3.84|4.19|.151|.165|| |||||||||∅p1|3.84|4.19|.151|.165|| |||||||||q|30.15 BSC||1.187 BSC||| |||||||||R||13.33||.525|| |||||||||R1||4.77||.188|| |||||||||s|16.64|17.14|.655|.675|| |IXYS reserves the right to change limits, test co||nditions, and dimensions.|||||||||||| IXYS reserves the right to change limits, test conditions, and dimensions. 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: **IXFH 10N100 IXFH 12N100 IXFM 10N100 IXFM 12N100** Fig. 1 Output Characteristics **==> picture [209 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>18 TJ = 25°C VGS = 10V<br>7V<br>16<br>6V<br>14<br>12<br>10<br>8<br>6<br>5V<br>4<br>2<br>0<br>0 5 10 15 20<br>VDS - Volts<br>Fig. 3 RDS(on) vs. Drain Current<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [215 x 390] intentionally omitted <==** **----- Start of picture text -----**<br> 1.5<br>TJ = 25°C<br>1.4<br>1.3<br>1.2<br>VGS = 10V<br>1.1 VGS = 15V<br>1.0<br>0.9<br>0 5 10 15 20 25<br>ID - Amperes<br>Fig. 5 Drain Current vs.<br>Case Temperature<br>20<br>18<br>16<br>14<br>12N100<br>12<br>10<br>10N100<br>8<br>6<br>4<br>2<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees C<br> - Normalized<br>DS(on)<br>R<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> Fig. 2 Input Admittance **==> picture [210 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>18<br>16<br>14<br>12<br>TJ = 25°C<br>10<br>8<br>6<br>4<br>2<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> Fig. 4 Temperature Dependence of Drain to Source Resistance **==> picture [220 x 390] intentionally omitted <==** **----- Start of picture text -----**<br> 2.50<br>2.25<br>2.00<br>1.75<br>1.50<br>ID = 6A<br>1.25<br>1.00<br>0.75<br>0.50<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees C<br>Fig. 6 Temperature Dependence of<br>Breakdown and Threshold Voltage<br>1.2<br>V<br>GS(th) BVDSS<br>1.1<br>1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>0.5<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees C<br> - Normalized<br>DS(on)<br>R<br> - Normalized<br>G(th)<br>BV/V<br>**----- End of picture text -----**<br> © 2004 IXYS All rights reserved **IXFH 10N100 IXFH 12N100 IXFM 10N100 IXFM 12N100** ## Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area **==> picture [464 x 373] intentionally omitted <==** **----- Start of picture text -----**<br> 10 10µs<br>9 VDS = 500V<br>87 IIDG = 6A = 10mA 10 Limited by RDS(on) 100µs<br>6<br>1ms<br>5<br>4<br>1 10ms<br>3<br>100ms<br>2<br>1<br>0 0.1<br>0 25 50 75 100 125 150 1 10 100 1000<br>Gate Charge - nCoulombs VDS - Volts<br>Fig.8 Capacitance Curves Fig.9 Source Current vs. Source<br>to Drain Voltage<br>20<br>Cississ 18<br>16<br>14<br>f = 1MHz 12<br>VDS = 25VDS = 25V = 25V 10<br>8 TJ = 125°C<br>6<br>Cossoss 4 TJ = 25°C<br>2<br>Crssrss<br>0 0<br>0 5 10 15 20 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VDS - VoltsDS - Volts - Volts VSD - Volts<br> - Amperes<br>ID<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [183 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 4500<br>4000 Cississ<br>3500<br>3000<br>f = 1MHz<br>2500<br>VDS = 25VDS = 25V = 25V<br>2000<br>1500<br>1000<br>Cossoss<br>500<br>Crssrss<br>0<br>0 5 10 15 20<br>VDS - VoltsDS - Volts - Volts<br>Capacitance - pF<br>**----- End of picture text -----**<br> Fig.10 Transient Thermal Impedance **==> picture [476 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>D=0.5<br>0.1<br>D=0.2<br>D=0.1<br>D=0.05<br>0.01 D=0.02<br>D=0.01<br>Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Time - Seconds<br>Thermal Response - K/W<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
Updated at February 9, 2023
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