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IXFH120N20P
Power MOSFET, N Channel, 200 V, 120 A, 0.022 ohm, TO-247, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation
- MSL: -
- SVHC: Lead (21-Jan-2025)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 714W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-247
- Drain Source Voltage Vds: 200V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 120A
- Drain Source On State Resistance: 0.022ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 5.65 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **Polar[TM ] HiPerFET[TM] Power MOSFET** ## **IXFH120N20P IXFK120N20P** **V = 200V DSS I = 120A D25 R ≤ 22m Ω DS(on) t ≤ 200ns rr** N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ## **TO-247 (IXFH)** |**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**| |---|---|---|---| |**VDSS**|TJ = 25°C to 175°C|200|V| |**VDGR**|TJ = 25°C to 175°C, RGS= 1MΩ|200|V| |**VGSS**|Continuous|±20|V| |**VGSM**|Transient|±30|V| |**ID25**|TC = 25°C|120|A| |**ILRMS**|Lead Current Limit, RMS|75|A| |**IDM**|TC = 25°C, Pulse Width Limited by TJM|300|A| |**IA**<br>TC = 25°C<br>60<br>A<br>**EAS**<br>TC = 25°C<br>2<br>J<br>~~a~~|||| |**PD**|TC = 25°C|714|W| |**dV/dt**|IS<br>≤IDM, VDD ≤VDSS, TJ ≤175°C 10 V/ns|175°C 10 V/ns|175°C 10 V/ns| |**TJ**||-55 ... +175|°C| |**TJM**||175|°C| |**Tstg**||-55 ... +175|°C| |**TL**<br>**TSOLD**<br>**Md**|1.6mm (0.062 in.) from Case for 10s<br>Plastic Body for 10s<br>Mounting Torque<br>1.13/10|300<br>260<br>1.13/10|°C<br>°C<br>Nm/lb.in.| |**Weight**|TO-247<br>TO-264|6<br>10|g<br>10g| **==> picture [113 x 148] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>D<br>S Tab<br>TO-264 (IXFK)<br>G<br>D<br>S<br>Tab<br>G = Gate D = Drain<br>S = Source Tab = Drain<br>**----- End of picture text -----**<br> ## **Features** International Standard Packages Avalanche Rated Fast Intrinsic Diode Low QG Low R DS(on) Low Drain-to-Tab Capacitance Low Package Inductance ## **Advantages** |**Symbol**<br>(T= 25°C Unless Otherwise Specified)**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25°C Unless Otherwise Specified)**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= 250μA 200||V| |**VGS(th)**<br>VDS = VGS, ID= 4mA 2.5|5.0|5.0<br>V| |**IGSS**<br>VGS =±20V, VDS= 0V|±|±200<br>nA| |**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 150°C<br>500 μA|25<br>500 μA|25<br>μA<br>500 μA| |**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25, Note 1|22 m|22 mΩ| Easy to Mount Space Savings ## **Applications** DC-DC Coverters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC and DC Motor Drives Uninterrupted Power Supplies High Speed Power Switching Applications © 20109 IXYS CORPORATION, All Rights Reserved DS99223F(02/10) ## **IXFH120N20P IXFK120N20P** |IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.<br>Note 1. Pulse test, t≤300μs, duty cycle, d≤2%.<br>**Source-Drain Diode**<br>**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C, Unless Otherwise Specified)**Min. Typ. Max.**<br>**IS**<br>VGS = 0V<br>120<br>A<br>**ISM**<br>Repetitive, Pulse Width Limited by TJM<br>300<br>A<br>**VSD**<br>IF= IS, VGS= 0V, Note 1<br>1.5<br>V<br>**trr**<br>100 200 ns<br>**QRM**<br>0.4<br>μC<br>**IRM**<br>6.0<br>A<br>IF= 25A, -di/dt = 100A/μs<br>V**R**= 100V, V**GS**= 0V<br>**Symbol**<br>**Test Conditions Characteristic Values**<br>(TJ= 25°C Unless Otherwise Specified)**Min. Typ. Max.**<br>**gfs**<br>VDS= 10V, ID= 0.5 • ID25, Note 1 40 63<br>S<br>**Ciss**<br>6000<br>pF<br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br>1300<br>pF<br>**Crss**<br>265<br>pF<br>**td(on)**<br>30<br>ns<br>**tr**<br>35<br>ns<br>**td(off)**<br>100<br>ns<br>**tf**<br>31<br>ns<br>**Qg(on)**<br>152<br>nC<br>**Qgs**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>40<br>nC<br>**Qgd**<br>75<br>nC<br>**RthJC**<br>0.21°C/W<br>**RthCS**<br>TO-247<br>0.21°C/W<br>TO-264 0.15°C/W<br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 3.3Ω(External)<br>**TO-264 (IXFK) Outline**<br>~~-~~<br>~~|-~~<br>~~=~~|~~e~~<br>∅P<br> **TO-247 (IXFH) Outline**<br> **1 2 3**<br>Terminals: 1 - Gate<br>2 - Drain<br>3 - Source<br>Dim.<br>Millimeter<br>Inches<br>Min.<br>Max.<br>Min.<br>Max.<br>A<br>4.7<br>5.3<br>.185<br>.209<br>A1<br>2.2<br>2.54<br>.087<br>.102<br>A2<br>2.2<br>2.6<br>.059<br>.098<br>b<br>1.0<br>1.4<br>.040<br>.055<br>b1<br>1.65<br>2.13<br>.065<br>.084<br>b~~2~~<br>2.87<br>3.12<br>.113<br>.123<br>C<br>.4<br>.8<br>.016<br>.031<br>D<br>20.80<br>21.46<br>.819<br>.845<br>E<br>15.75<br>16.26<br>.610<br>.640<br>e<br>5.20<br>5.72<br>0.205 0.225<br>L<br>19.81<br>20.32<br>.780<br>.800<br>L1<br>4.50<br>.177<br>∅P<br>3.55<br>3.65<br>.140<br>.144<br>Q<br>5.89<br>6.40<br>0.232 0.252<br>R<br>4.32<br>5.49<br>.170<br>.216<br>S<br>6.15 BSC<br>242 BSC<br>~~ae~~tt<br>~~-~~<br>~~=~~|| |---|---|---| |||| ||**TO-264 (IXFK) Outline**<br>Millimeter<br>Inches<br>Min.<br>Max.<br>Min.<br>Max.<br>A<br>4.82<br>5.13<br>.190<br>.202<br>A1<br>2.54<br>2.89<br>.100<br>.114<br>A2<br>2.00<br>2.10<br>.079<br>.083<br>b<br>1.12<br>1.42<br>.044<br>.056<br>b1<br>2.39<br>2.69<br>.094<br>.106<br>b2<br>2.90<br>3.09<br>.114<br>.122<br>c<br>0.53<br>0.83<br>.021<br>.033<br>D<br>25.91<br>26.16<br>1.020<br>1.030<br>E<br>19.81<br>19.96<br>.780<br>.786<br>e<br>5.46 BSC<br>.215 BSC<br>J<br>0.00<br>0.25<br>.000<br>.010<br>K<br>0.00<br>0.25<br>.000<br>.010<br>L<br>20.32<br>20.83<br>.800<br>.820<br>L1<br>2.29<br>2.59<br>.090<br>.102<br>P<br>3.17<br>3.66<br>.125<br>.144<br>Q<br>6.07<br>6.27<br>.239<br>.247<br>Q1<br>8.38<br>8.69<br>.330<br>.342<br>R<br>3.81<br>4.32<br>.150<br>.170<br>R1<br>1.78<br>2.29<br>.070<br>.090<br>S<br>6.04<br>6.30<br>.238<br>.248<br>T<br>1.57<br>1.83<br>.062<br>.072<br>Dim.<br>1 - Gate<br>2 - Drain<br>3 - Source<br>4 - Drain<br>d|| Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. **==> picture [522 x 208] intentionally omitted <==** **----- Start of picture text -----**<br> Dim. Millimeter Inches<br>Min. Max. Min. Max.<br>A 4.82 5.13 .190 .202<br>A1 2.54 2.89 .100 .114<br>A2 2.00 2.10 .079 .083<br>b 1.12 1.42 .044 .056<br>b1 2.39 2.69 .094 .106<br>b2 2.90 3.09 .114 .122<br>c 0.53 0.83 .021 .033<br>D 25.91 26.16 1.020 1.030<br>E 19.81 19.96 .780 .786<br>e 5.46 BSC .215 BSC<br>J 0.00 0.25 .000 .010<br>K 0.00 0.25 .000 .010<br>L 20.32 20.83 .800 .820<br>L1 2.29 2.59 .090 .102<br>P 3.17 3.66 .125 .144<br>Q 6.07 6.27 .239 .247<br>Q1 8.38 8.69 .330 .342<br>R 3.81 4.32 .150 .170<br>R1 1.78 2.29 .070 .090<br>S 6.04 6.30 .238 .248<br>IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. T 1.57 1.83 .062 .072<br>IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2<br>by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2<br>4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537<br>**----- End of picture text -----**<br> **IXFH120N20P IXFK120N20P** **==> picture [257 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics<br>@ 25ºC<br>120<br>VGS = 10V<br> 9V<br>100<br> 8V<br>80<br>60<br>7V<br>40<br>6V<br>20<br>5V<br>0<br>0 0.5 1 1.5 2 2.5<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **Fig. 3. Output Characteristics @ 150ºC** **==> picture [246 x 392] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>VGS = 10V<br> 9V<br>100<br> 8V<br>80<br>7V<br>60<br>6V<br>40<br>20<br>5V<br>0<br>0 1 2 3 4 5 6<br>VD S - Volts<br>Fig. 5. RDS(on) Normalized to 0.5 ID25<br>Value vs. Drain Current<br>4<br>T J = 175ºC<br>3.5<br>3<br>2.5<br>VGS = 10V<br>VGS = 15V<br>2<br>1.5<br>1 T J = 25ºC<br>0.5<br>0 30 60 90 120 150 180 210 240 270 300<br>I D - Amperes<br> - Amperes<br>D<br>I<br> - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br> **==> picture [255 x 421] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 2. Extended Output Characteristics<br>@ 25ºC<br>270<br>VGS = 10V<br>240<br>9V<br>210<br>180<br>150<br>8V<br>120<br>90 7V<br>60<br>30 6V<br>0<br>0 2 4 6 8 10 12 14 16<br>VD S - Volts<br>Fig. 4. RDS(on) Normalized to 0.5 ID25<br>Value vs. Junction Temperature<br>3 V GS = 10V<br>2.5<br>I D = 120A<br>2<br>I D = 60A<br>1.5<br>1<br>0.5<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ - Degrees Centigrade<br> - Amperes<br>D<br>I<br> - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br> **Fig. 6. Drain Current vs. Case Temperature** **==> picture [246 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 90<br>80 External Lead Current Limit<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>-50 -25 0 25 50 75 100 125 150 175<br>TC - Degrees Centigrade<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> © 20109 IXYS CORPORATION, All Rights Reserved **IXFH120N20P IXFK120N20P** **Fig. 7. Input Admittance** **==> picture [245 x 392] intentionally omitted <==** **----- Start of picture text -----**<br> 180<br>150<br>120<br>90<br>60 T J = 150ºC<br> 25ºC<br>30 º<br> -40 C<br>0<br>4 4.5 5 5.5 6 6.5 7 7.5 8 8.5<br>VG S - Volts<br>Fig. 9. Source Current vs.<br>Source-To-Drain Voltage<br>350<br>300<br>250<br>200<br>150<br>100<br>TJ = 150ºC<br>50<br>TJ = 25ºC<br>0<br>0.4 0.6 0.8 1 1.2 1.4 1.6<br>VS D - Volts<br> - Amperes<br>D<br>I<br> - Amperes<br>S<br>I<br>**----- End of picture text -----**<br> **Fig. 8. Transconductance** **==> picture [246 x 179] intentionally omitted <==** **----- Start of picture text -----**<br> 90<br>80<br>70<br>60<br>50<br>40 25TJ = -40ººCC<br>30 150ºC<br>20<br>10<br>0<br>0 30 60 90 120 150 180 210<br>I D - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br> **Fig. 10. Gate Charge** **==> picture [243 x 179] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>9 VDS = 100V<br>8 ID = 60A<br>IG = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 20 40 60 80 100 120 140 160<br>Q G - nanoCoulombs<br> - Volts<br>G S<br>V<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **Fig. 12. Forward-Bias Safe Operating Area** **==> picture [526 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 100,000 1000<br>f = 1MHz T J = 175ºC<br>R Limit T C = 25ºC<br>DS(on)<br>Ciss<br>10,000 25µs<br>C oss 100 100µs<br>1,000 1ms<br>Crss<br>10ms<br>DC<br>100 10<br>0 5 10 15 20 25 30 35 40 10 100 1000<br>VDS - Volts VD S - Volts<br> - Amperes<br>D<br>I<br>Capacitance - picoFarads<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. **IXFH120N20P IXFK120N20P** **Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce** **==> picture [521 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 1.00<br>0.10<br>0.01<br>1 1 0 1 00 1000<br>Puls e W idth - millis ec onds<br>ºC / W<br> -<br>( t h ) J C<br>R<br>**----- End of picture text -----**<br> © 20109 IXYS CORPORATION, All Rights Reserved IXYS REF: F_120N20P(8S)5-05-04 **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
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