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IXFH120N15P
Power MOSFET, PolarFET, N Channel, 150 V, 120 A, 0.016 ohm, TO-247, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation
- MSL: -
- SVHC: Lead (21-Jan-2025)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 600W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-247
- Drain Source Voltage Vds: 150V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 120A
- Drain Source On State Resistance: 0.016ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 300 |
| Price | 4.64 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **PolarHT[TM] HiPerFET Power MOSFET** N-Channel Enhancement Mode Avalanche Energy Rated Fast Intrinsic Diode ## **IXFH 120N15P IXFT 120N15P** **V = 150 V DSS I = 120 A D25 R ≤ 16 m Ω DS(on) t ≤ 200 ns rr** |**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**|**TO-247 (IXFH)**|**TO-247 (IXFH)**|||||| |---|---|---|---|---|---|---|---|---|---|---| |**VDSS**|TJ = 25°C to 175°C|150|V|||||||| |**VDGR**|TJ = 25°C to 175°C; RGS= 1 MΩ|150|V|||||||| |||||||||||| |**VDSS**<br>**VGSM**<br>**ID25**|Continuous<br>Transient<br>TC = 25°C|±20<br>±30<br>120|V<br>V<br>A|G D S|||D (TAB)|||| |**IL(RMS)**|External lead current limit|75|A|||||||| |**IDM**|TC = 25°C, pulse width limited by TJM|260|A|||||||| |**IAR**|TC = 25°C|60|A|**TO-268 (IXFT)**||||||| |**EAR**|TC = 25°C|60|mJ|||||||| |**EAS**|TC = 25°C|2.0|J|||||||| |~~a~~|~~a~~|~~a~~|~~a~~||G|||||| |**dv/dt**|IS<br>≤IDM, di/dt≤100 A/µs, VDD ≤VDSS,<br>TJ ≤150°C, RG= 4Ω|10|V/ns||S||)||D (TAB)|| |**PD**|TC = 25°C|600|W|G = Gate|D = Drain|||||| |**TJ**||-55 ... +175|°C|S = Source|TAB = Drain|TAB = Drain||||| |**TJM**||175|°C|||||||| |**Tstg**||-55 ... +150|°C|||||||| |**TL**|1.6 mm (0.062 in.) from case for 10 s|300|°C|||||||| |**TSOLD**|Plastic case for 10 s|260|°C|**Features**||||||| |**Md**|Mounting torque<br>(TO-3P)|1.13/10|Nm/lb.in.|l International standard packages|||International standard packages|||| |**Weight**|TO-247|6.0|g|l Unclamped Inductive Switching (UIS)||||||Unclamped Inductive Switching (UIS)| ||TO-268|5.0|g|rated||||||| > l Unclamped Inductive Switching (UIS) rated > l Low package inductance - easy to drive and to protect |(T= 25°C, unless otherwise specified)<br>**Min. Typ.**|**Min. Typ.**|**Max.**| |---|---|---| |(TJ= 25°C, unless otherwise specified)<br>**Min. Typ.**<br>~~|~~|**Min. Typ.**<br>~~||~~|**Max.**| |**BVDSS**<br>VGS = 0 V, ID= 250µA<br>150<br>~~|~~<br>~~|~~|~~||~~<br>~~||~~|V| |**VGS(th)**<br>VDS = VGS, ID= 4 mA<br>3.0<br>~~|~~<br>~~|~~<br>~~|~~|~~| |~~<br>~~||~~<br>~~||~~|5.0<br>V| |**IGSS**<br>VGS =±20 VDC, VDS= 0<br>~~|~~<br>~~|~~|~~| |~~<br>~~||~~|±100<br>nA| |**IDSS**<br>VDS = VDSS<br>VGS= 0 V<br>TJ= 175°C<br>~~|~~|~~| |~~~|25<br>µA<br>500<br>µA| |**RDS(on)**<br>VGS = 10 V, ID= 0.5 ID25<br>Pulse test, t≤300µs, dutycycle d≤2 %<br>|~~—~~|16<br>mΩ| DS99210E(12/05) © 2006 IXYS All rights reserved **IXFH 120N15P IXFT 120N15P** **==> picture [339 x 245] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||| |---|---|---|---|---|---| |Symbol|Test Conditions Characteristic Values| |(TJ = 25|°|C, unless otherwise specified)| |Min.|Typ.|Max.| |gfs|VDS= 10 V; ID = 0.5 ID25, pulse test|40|60|S| |Ciss|4900|pF| |Coss|VGS = 0 V, VDS = 25 V, f = 1 MHz|1300|pF| |Crss|330|pF| |t|33|ns| |d(on)| |tr|VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A|42|ns| |td(off)|RG = 4|Ω|(External)|85|ns| |tf|26|ns| |Q|150|nC| |g(on)| |Qgs|VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25|40|nC| |Q|80|nC| |gd| |RthJC|0.25|°|C/W| |RthCS|(TO-3P)|0.21|°|C/W| **----- End of picture text -----**<br> **==> picture [339 x 147] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||| |---|---|---|---|---|---|---| |Source-Drain Diode Characteristic Values| |(TJ = 25|°|C, unless otherwise specified)| |Symbol|Test Conditions|Min.|Typ.|Max.| |IS|VGS = 0 V|120|A| |ISM|Repetitive|260|A| |VSD|IF = IS, VGS = 0 V,|1.5|V| |Pulse test, t|≤|300|µ|s, duty cycle d|≤|2 %| |trr|IF = 25 A, -di/dt = 100 A/|µ|s|200|ns| |QRM|VR = 100 V, VGS = 0 V|600|nC| |IRM|6|Α| **----- End of picture text -----**<br> ## **TO-247 (IXFH) Outline** **==> picture [120 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||| |---|---|---|---|---|---| |Terminals:|1 - Gate|2 - Drain| |3 - Source|Tab - Drain| |Dim.|Millimeter|Inches| |Min.|Max.|Min.|Max.| |A|4.7|5.3|.185|.209| |A1|2.2|2.54|.087|.102| |A2|2.2|2.6|.059|.098| |b|1.0|1.4|.040|.055| |b1|1.65|2.13|.065|.084| |b2|2.87|3.12|.113|.123| |C|.4|.8|.016|.031| |D|20.80|21.46|.819|.845| |E|15.75|16.26|.610|.640| |e|5.20|5.72|0.205|0.225| |L|19.81|20.32|.780|.800| |L1|4.50|.177| |∅|P|3.55|3.65|.140|.144| |Q|5.89|6.40|0.232|0.252| |R|4.32|5.49|.170|.216| |S|6.15|BSC|242|BSC| **----- End of picture text -----**<br> ## **TO-268 (IXFT) Outline** **==> picture [123 x 125] intentionally omitted <==** **==> picture [110 x 13] intentionally omitted <==** **----- Start of picture text -----**<br> Terminals: 1 - Gate 2 - Drain<br>3 - Source Tab - Drain<br>**----- End of picture text -----**<br> **==> picture [511 x 200] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||||| |---|---|---|---|---|---|---|---|---| |IXYS reserves the right to change limits, test conditions, and dimensions.| |IXYS MOSFETs and IGBTs are covered by|4,835,592|4,931,844|5,049,961|5,237,481|6,162,665|6,404,065 B1|6,683,344|6,727,585| |one or moreof the following U.S. patents:|4,850,072|5,017,508|5,063,307|5,381,025|6,259,123 B1|6,534,343|6,710,405B2|6,759,692| |4,881,106|5,034,796|5,187,117|5,486,715|6,306,728 B1|6,583,505|6,710,463|6,771,478 B2| **----- End of picture text -----**<br> **IXFH 120N15P IXFT 120N15P** **Fig. 1. Output Characteristics @ 25ºC** **==> picture [231 x 185] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>VGS = 10V<br> 9V<br>100<br>80 8V<br>60 7V<br>40<br>6V<br>20<br>5V<br>0<br>0 0.5 1 1.5 2 2.5<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **Fig. 3. Output Characteristics @ 150ºC** **==> picture [228 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>VGS = 10V<br> 9V<br>100<br>8V<br>80<br>7V<br>60<br>6V<br>40<br>20<br>5V<br>0<br>0 1 2 3 4 5<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **Fig. 5. RDS(on) Normalized to 0.5 ID25 Value vs. Drain Current** **==> picture [232 x 180] intentionally omitted <==** **----- Start of picture text -----**<br> 4<br>3.5 T J = 175ºC<br>3<br>2.5<br>2 VGS = 10V<br>VGS = 15V<br>1.5<br>1<br>T J = 25ºC<br>0.5<br>0 30 60 90 120 150 180 210 240 270 300<br>I D - Amperes<br> - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br> **Fig. 2. Extended Output Characteristics @ 25ºC** **==> picture [229 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 280<br>VGS = 10V<br>240<br>200 9V<br>160<br>8V<br>120<br>80<br>7V<br>40<br>6V<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **Fig. 4. RDS(on) Normalized to 0.5 ID25 Value vs. Junction Temperature** **==> picture [233 x 404] intentionally omitted <==** **----- Start of picture text -----**<br> 2.8<br>2.6 V GS = 10V<br>2.4<br>2.2<br>2<br>I D = 120A<br>1.8<br>1.6 I D = 60A<br>1.4<br>1.2<br>1<br>0.8<br>0.6<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ - Degrees Centigrade<br>Fig. 6. Drain Current vs. Case<br>Temperature<br>90<br>80 External Lead Current Limit<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>-50 -25 0 25 50 75 100 125 150 175<br>TC - Degrees Centigrade<br> - Normalized<br>D S ( o n )<br>R<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> © 2006 IXYS All rights reserved **IXFH 120N15P IXFT 120N15P** **Fig. 7. Input Admittance** **==> picture [228 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> 210<br>180<br>150<br>120<br>90<br>60 TJ = 150ºC<br> 25ºC<br>30 -40ºC<br>0<br>4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9<br>VG S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **Fig. 9. Source Current vs. Source-To-Drain Voltage** **==> picture [231 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> 300<br>250<br>200<br>150<br>100<br>TJ = 150ºC<br>50<br>TJ = 25ºC<br>0<br>0.4 0.6 0.8 1 1.2 1.4 1.6 1.8<br>VS D - Volts<br> - Amperes<br>S<br>I<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **==> picture [233 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 10,000<br>Ciss<br>1,000<br>Coss<br>f = 1MHz C rss<br>100<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br>Capacitance - picoFarads<br>**----- End of picture text -----**<br> **Fig. 8. Transconductance** **==> picture [231 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> 90<br>80<br>70<br>60<br>50<br>40 T J = -40ºC<br> 25ºC<br>30<br> 150ºC<br>20<br>10<br>0<br>0 30 60 90 120 150 180 210 240 270<br>I D - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br> **Fig. 10. Gate Charge** **==> picture [228 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>9 VDS = 75V<br>8 I D = 60A<br>IG = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 20 40 60 80 100 120 140 160<br>Q G - nanoCoulombs<br> - Volts<br>G S<br>V<br>**----- End of picture text -----**<br> **Fig. 12. Forward-Bias Safe Operating Area** **==> picture [234 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>T J = 175ºC<br>R Limit T C = 25ºC<br>DS(on)<br>25µs<br>100<br>100µs<br>1ms<br>10ms<br>DC<br>10<br>10 100 1000<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. **IXFH 120N15P IXFT 120N15P** **Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is ta n c e** **==> picture [490 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 1 . 0 0<br>0 . 1 0<br>0 . 0 1<br>0 . 1 1 1 0 1 0 0 1 0 0 0<br>Pu ls e W id th - millis e c o n d s<br>ºC / W<br> -<br>( t h ) J C<br>R<br>**----- End of picture text -----**<br> © 2006 IXYS All rights reserved **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
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