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IXFH110N10P
Power MOSFET, PolarFET, N Channel, 100 V, 110 A, 0.015 ohm, TO-247, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:110A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation
- MSL: -
- SVHC: Lead (21-Jan-2025)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 480W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-247
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 110A
- Drain Source On State Resistance: 0.015ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 300 |
| Price | 3.31 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **PolarHT[TM] HiPerFET IXFH 110N10P IXFV 110N10P Power MOSFET IXFV 110N10PS** N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated **V = 100 V DSS I = 110 A D25 R ≤ 15 m Ω DS(on) t ≤ 150 ns rr** |**Symbol**|**Test Conditions**||**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**|**TO-247 (IXFH)**|**TO-247 (IXFH)**||| |---|---|---|---|---|---|---|---|---|---|---| |**VDSS**<br>TJ = 25°C to 175°C<br>100<br>V<br>**VDGR**<br>TJ = 25°C to 175°C; RGS= 1 MΩ<br>100<br>V<br>**VGSS**<br>Continuous<br>±20<br>V<br>**VGSM**<br>Transient<br>±30<br>V<br>~~a~~||||||||G<br>D<br>S<br>(TAB)<br>oO<br>~~<br>ZY<br>ie<br>aeaa<br>nad<br>a<br>Seaeae<br>*<br>ee<br>ee||| |**ID25**|TC = 25°C||110|||A||||| |**ID(RMS)**<br>**IDM**|External lead current limit<br>TC = 25°C, pulse width limited by TJM||75<br>250|||A<br>A|**PLUS220 (IXFV)**|||| |**IAR**<br>**EAR**<br>**EAS**<br>**dv/dt**|TC = 25°C<br>TC = 25°C<br>TC = 25°C<br>IS<br>≤IDM, di/dt≤100 A/µs, VDD ≤VDSS,||60<br>40<br>1.0<br>10|||A<br>mJ<br>J<br>V/ns||G<br>S<br>D<br>D (TAB)<br>ZA p \||| ||TJ ≤150°C, RG= 4Ω|||||||||| |**PD**|TC = 25°C||480|||W|**PLUS220SMD (IXFV...S)**|||| |**TJ**<br>**TJM**<br>**Tstg**<br>**TL**<br>**TSOLD**|1.6 mm (0.062 in.) from case for 10 s<br>Plastic body for 10 s||-55 ... +175<br>175<br>-55 ... +150<br>300<br>260|||°C<br>°C<br>°C<br>°C<br>°C||G<br>S<br>D (TAB)<br>‘ = *<br>é||| |**Md**|Mounting torque<br>(TO-247)||1.13/10||Nm/lb.in.|||||| |**FC**|Mounting Force<br>(PLUS220)|11..65 / 2.5..15||||N/lb||G = Gate<br>D = Drain<br>S = Source<br>TAB = Drain||| |**Weight**|TO-247<br>PLUS220|||6<br>4||g<br>g|**Features**<br>l Fast intrinsic diode|||| ||||||||l|International standard packages||| |**Symbol**<br>**Test Conditions**<br>(TJ= 25°C, unless otherwise specified)||**Characteristic Values**<br>**Min. Typ.**<br>**Max.**|||||l <br>l|Unclamped Inductive Switching (UIS)<br>rated<br> Low package inductance||| |**BVDSS**|VGS = 0 V, ID= 250µA|100||||V||- easy to drive and to protect||| |**VGS(th)**|VDS = VGS, ID= 4 mA|2.5|||5.0|V||||| |**IGSS**|VGS =±20 VDC, VDS= 0|||±100||nA|**Advantages**<br>l<br>Easy to mount|||| |**IDSS**|VDS = VDSS<br>VGS= 0 V<br>TJ= 150°C||||25<br>250|µA<br>µA|l<br>l|Space savings<br>High power density||| |**RDS(on)**|VGS = 10 V, ID= 0.5 ID25||||15|mΩ||||| ||Pulse test, t≤300µs, duty cycle d≤2 %|||||||||| - l Unclamped Inductive Switching (UIS) rated DS99212E(01/06) © 2006 IXYS All rights reserved **IXFH 110N10P IXFV110N10P IXFV 110N10PS** |J<br>**Min.**|**Typ.**|**Typ.**|**Max.**| |---|---|---|---| |**Min.**<br>**gfs**<br>VDS= 10 V; ID= 0.5 ID25, pulse test<br>30|**Typ.**<br>40||**Max.**<br>S| |**Ciss**<br>**Coss**<br>VGS= 0 V, VDS= 25 V, f = 1 MHz<br>**Crss**|3550<br>1370<br>440||pF<br>pF<br>pF| ||||| |**td(on)**<br>**tr**<br>VGS= 10 V, VDS= 0.5 VDSS, ID= 60 A<br>**td(off)**<br>RG= 4Ω(External)<br>**tf**|21<br>25<br>65<br>25||ns<br>ns<br>ns<br>ns| |**Qg(on)**<br>**Qgs**<br>VGS= 10 V, VDS= 0.5 VDSS, ID= 0.5 ID25<br>**Qgd**|110<br>25<br>62||nC<br>nC<br>nC| |**RthJC**<br>**RthCS**<br>**(TO-247)**|0.21||0.31°C/W<br>°C/W| |**Source-Drain Diode Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**Symbol**<br>**Test Conditions**<br>**Min.**<br>**Typ.**<br>**Max.**|||| |**IS**<br>VGS= 0 V|||110<br>A| |**ISM**<br>Repetitive|||250<br>A| |**VSD**<br>IF= IS, VGS= 0 V,<br>Pulse test, t≤300µs, duty cycle d≤2 %|||1.5<br>V| |**trr**<br>IF= 25 A, -di/dt = 100 A/µs<br>**QRM**<br>VR= 50 V, VGS= 0 V||0.6|150<br>ns<br>µC| **==> picture [135 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> PLUS220SMD (IXFV_S) Outline<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 **IXFH 110N10P IXFV110N10P IXFV 110N10PS** **==> picture [250 x 219] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics<br>@ 25ºC<br>110<br>100 VGS = 10V<br> 9V<br>90<br>80<br>70<br>8V<br>60<br>50<br>40<br>7V<br>30<br>20 6V<br>10<br>5V<br>0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **Fig. 3. Output Characteristics @ 150ºC** **==> picture [234 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 110<br>100 VGS = 10V<br> 9V<br>90<br>80<br>8V<br>70<br>60<br>7V<br>50<br>40<br>30 6V<br>20<br>5V<br>10<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5 4<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **Fig. 5. RDS(on) Normalized to 0.5 ID25 Value vs. Drain Current** **==> picture [239 x 180] intentionally omitted <==** **----- Start of picture text -----**<br> 3<br>2.8<br>2.6<br>2.4 TJ = 175ºC<br>2.2<br>2<br>1.8<br>1.6 VGS = 10V<br>1.4 VGS = 15V<br>1.2<br>1 TJ = 25ºC<br>0.8<br>0.6<br>0 25 50 75 100 125 150 175 200 225 250<br>I D - Amperes<br> - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br> **Fig. 2. Extended Output Characteristics @ 25ºC** **==> picture [239 x 406] intentionally omitted <==** **----- Start of picture text -----**<br> 220<br>200 VGS = 10V<br>180<br>160 9V<br>140<br>120<br>8V<br>100<br>80<br>60 7V<br>40<br>6V<br>20<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>VD S - Volts<br>Fig. 4. RDS(on) Normalized to 0.5 ID25<br>Value vs. Junction Temperature<br>2.4<br>2.2 V GS = 10V<br>2<br>1.8<br>ID = 110A<br>1.6<br>1.4 I D = 55A<br>1.2<br>1<br>0.8<br>0.6<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ - Degrees Centigrade<br> - Amperes<br>D<br>I<br> - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br> **Fig. 6. Drain Current vs. Case Temperature** **==> picture [238 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>70 External Lead Current Limit<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>-50 -25 0 25 50 75 100 125 150 175<br>TC - Degrees Centigrade<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> © 2006 IXYS All rights reserved **IXFH 110N10P IXFV110N10P IXFV 110N10PS** **Fig. 7. Input Admittance** **==> picture [232 x 404] intentionally omitted <==** **----- Start of picture text -----**<br> 250<br>225 T J = -40ºC<br>200 25 º C<br> 150ºC<br>175<br>150<br>125<br>100<br>75<br>50<br>25<br>0<br>4 5 6 7 8 9 10 11<br>VG S - Volts<br>Fig. 9. Source Current vs.<br>Source-To-Drain Voltage<br>350<br>300<br>250<br>200<br>150<br>100<br>TJ = 150ºC<br>50 º<br>T J = 25 C<br>0<br>0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2<br>VS D - Volts<br> - Amperes<br>D<br>I<br> - Amperes<br>S<br>I<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **==> picture [232 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>Ciss<br>1000<br>Coss<br>Crss<br>f = 1MHz<br>100<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br>Capacitance - picoFarads<br>**----- End of picture text -----**<br> **Fig. 8. Transconductance** **==> picture [231 x 405] intentionally omitted <==** **----- Start of picture text -----**<br> 70<br>60<br>50<br>40 TJ = -40ºC<br> 25ºC<br>30 150ºC<br>20<br>10<br>0<br>0 50 100 150 200 250 300<br>I D - Amperes<br>Fig. 10. Gate Charge<br>10<br>9 VDS = 50V<br>8 ID = 55A<br>IG = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 20 40 60 80 100 120<br>Q G - nanoCoulombs<br> - Siemens<br>f s<br>g<br> - Volts<br>G S<br>V<br>**----- End of picture text -----**<br> **Fig. 12. Forward-Bias Safe Operating Area** **==> picture [232 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>TJ = 175ºC<br>TC = 25ºC<br>R Limit<br>DS(on)<br>25µs<br>100 100µs<br>1ms<br>10ms<br>DC<br>10<br>1 10 100 1000<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. **IXFH 110N10P IXFV110N10P IXFV 110N10PS** ## **Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is ta n c e** **==> picture [491 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 1 . 0 0<br>0 . 1 0<br>0 . 0 1<br>0 . 1 1 1 0 1 0 0 1 0 0 0<br>Pu ls e W id th - millis e c o n d s<br>ºC / W<br> -<br>( t h ) J C<br>R<br>**----- End of picture text -----**<br> © 2006 IXYS All rights reserved **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
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