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IXFH10N80P
Power MOSFET, N Channel, 800 V, 10 A, 1.1 ohm, TO-247, Through Hole
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- SVHC: Lead (21-Jan-2025)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: Polar HiPerFET
- Qualification: -
- Power Dissipation: 300W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-247
- Drain Source Voltage Vds: 800V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 10A
- Drain Source On State Resistance: 1.1ohm
- Gate Source Threshold Voltage Max: 5.5V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 2.24 € |
| Current stock | 25+ |
| Lead time | 30 days |
Datasheet
## **Polar[TM ] HiPerFET Power MOSFET** **IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P** N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ||**TO-263 (IXFA)**|**TO-263 (IXFA)**<br>G<br>D (Tab)<br>S<br>2<br>~~”~~|**TO-263 (IXFA)**<br>G<br>D (Tab)<br>S<br>2<br>~~”~~|S<br>G<br>D<br>**TO-220 (IXFP)**||D (Tab)<br>-|D (Tab)<br>-|D (Tab)<br>-|| |---|---|---|---|---|---|---|---|---|---| |**Symbol**||**Test Conditions**|||**Maximum Ratings**||||| |**VDSS**||TJ = 25C to 150C||||800|||V| |**VDGR**||TJ = 25C to 150C, RGS= 1M||||800|||V| |**VGSS**||Continuous||||30|||V| |**VGSM**||Transient||||40|||V| |**ID25**||TC = 25C||||10|||A| |**IDM**||TC = 25C, Pulse Width Limited by T||C, Pulse Width Limited by TJM||30|||A| |**IA**||TC = 25C||||5|||A| |**EAS**||TC = 25C||||600|||mJ| |**dV/dt**||IS<br>IDM, VDD VDSS, TJ 150C||||10|||V/ns| |**PD**||TC = 25C||||300|||W| |**TJ**||||-55 ... +150|||||C| |**TJM**||||||150|||C| |**Tstg**<br>**TL**<br>**TSOLD**||-55 ... +150<br>Maximum Lead Temperature for Soldering 300<br>1.6 mm (0.062in.) from Case for 10s 260|||||||C<br>°C<br>°C| |**FC**||Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb||Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb|Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb|||Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb|Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb| |**Md**<br>**Weight**<br>TO-3P||Mounting Torque (TO-220, TO-247 & TO-3P)<br>TO-263<br>TO-220<br>TO-3P<br>5.5 g|||1.13 / 10 Nm/lb.in<br>2.5<br>3.0 g<br>5.5 g|||1.13 / 10 Nm/lb.in<br>g<br>3.0 g<br>5.5 g|| |||TO-247||6.0 g|6.0 g|6.0 g||6.0 g|6.0 g| |**Symbol**<br>**Test Conditions Characteristic Values**<br>(TJ= 25C Unless Otherwise Specified)||||**Test Conditions Characteristic Values**<br>**Min. Typ. Max.**||||**Test Conditions Characteristic Values**<br>**Min. Typ. Max.**|| |**BVDSS**<br>**VGS(th)**||VGS = 0V, ID= 250A<br>VDS = VGS, ID= 2.5mA||800<br>3.0|5.5 V|5.5 V|5.5 V|5.5 V|V<br>5.5 V| |**IGSS**||VGS =30V, VDS= 0V|||100 nA||||100 nA| |**IDSS**||VDS = VDSS, VGS= 0V|= 0V||25|25|25|25|25A| |||T|TJ= 150C<br>500||500|500|500|500A|| |**RDS(on)**||VGS = 10V, ID= 0.5|= 0.5**•**ID25, Note 1|1.1|1.1|1.1|1.1|1.1|1.1| **V = 800V DSS I = 10A D25 R 1.1 DS(on) t 250ns rr** **==> picture [110 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> TO-3P (IXFQ)<br>G<br>D<br>S<br>D (Tab)<br>TO-247 (IXFH)<br>G<br>D S D (Tab)<br>**----- End of picture text -----**<br> G = Gate D = Drain S = Source Tab = Drain ## **Features** - International Standard Packages - Avalanche Rated Low Package Inductance Easy to Drive and to Protect ## **Advantages** - Easy to Mount - Space Savings - High Power Density ## **Applications** - Switched-Mode and Resonant-Mode - Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls © 2018 IXYS CORPORATION, All Rights Reserved DS99432G(6/18) **IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P** |**Symbol**<br>**Test Conditions Characteristic Values**<br>|**Symbol**<br>**Test Conditions Characteristic Values**<br>|**Symbol**<br>**Test Conditions Characteristic Values**<br>| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**| |**gfs**<br>VDS= 20V, ID= 0.5**•**ID25, Note 1 7|11|S| |**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|2050<br>172<br>16|pF<br>pF<br>pF| |**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 5(External)|21<br>22<br>62<br>22|ns<br>ns<br>ns<br>ns| |**Qg(on)**<br> <br>**Qgs**<br>VGS= 10V, VDS= 0.5**•**VDSS, ID= 0.5**•**ID25<br> <br>**Qgd**<br>|40<br>12<br>14|nC<br>nC<br>nC| |**RthJC**<br> <br>**RthCS**<br>(TO-220)<br> <br>**RthCS**<br>(TO-247 & TO-3P)<br>|<br>0.50<br>0.25|0.42C/W<br> C/W<br> C/W| ## **Source-Drain Diode** |**Symbol**<br>**Test Conditions Characteristic Values**<br> |**Symbol**<br>**Test Conditions Characteristic Values**<br> |**Symbol**<br>**Test Conditions Characteristic Values**<br> | |---|---|---| |(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**| |**IS**<br>VGS= 0V||10 A| |**ISM**<br>Repetitive, Pulse WidthLlimited by TJM||30 A| |**VSD**<br>IF= IS, VGS= 0V, Note 1||1.5 V| |**trr**<br> <br>**IRM** <br>**QRM**<br> <br>IF= 10A, VGS= 0V<br>-di/dt = 100A/s<br>VR= 100V|200<br>3.0<br>0.6|250 ns<br>A<br>μC| Note 1. Pulse test, t 300 s, duty cycle d 2 % IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 ## **IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P** **==> picture [163 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25 [o] C<br>**----- End of picture text -----**<br> **==> picture [254 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>V GS = 10V<br>9 8V<br>7V<br>8<br>6V<br>7<br>6<br>5<br>4<br>3<br>2<br>1 5V<br>0<br>0 2 4 6 8 10 12 14<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 3. Output Characteristics @ TJ = 125[o] C** **==> picture [254 x 396] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>V GS = 10V<br>9<br> 7V<br>8<br>6V<br>7<br>6<br>5<br>4<br>3<br>5V<br>2<br>1<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 5A Value vs.<br> Drain Current<br>3.0<br>V GS = 10V<br>2.6<br>TJ = 125 [o] C<br>2.2<br>1.8<br>TJ = 25 [o] C<br>1.4<br>1.0<br>0.6<br>0 2 4 6 8 10 12 14 16 18<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **==> picture [264 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>18<br>VGS = 10V<br>16 8V<br>14 7V<br>12<br>10<br>8 6V<br>6<br>4<br>2<br>5V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 4. RDS(on) Normalized to ID = 5A Value vs. Junction Temperature** **==> picture [255 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 3.2<br>VGS = 10V<br>2.8<br>2.4<br>I D = 10A<br>2.0<br>I D = 5A<br>1.6<br>1.2<br>0.8<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Fig. 6. Maximum Drain Current vs. Case Temperature** **==> picture [258 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>8<br>6<br>4<br>2<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> © 2018 IXYS CORPORATION, All Rights Reserved ## **IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P** **==> picture [263 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance<br>10<br>9<br>8<br>7<br>6<br>5<br>T J = 125 [o] C 25 [o] C<br>4 - 40 [o] C<br>3<br>2<br>1<br>0<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 9. Forward Voltage Drop of Intrinsic Diode** **==> picture [254 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>25<br>20<br>15<br>TJ = 125 [o] C<br>10<br>T J = 25 [o] C<br>5<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1<br>VSD - Volts<br> - Amperes<br>IS<br>**----- End of picture text -----**<br> **==> picture [263 x 423] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 8. Transconductance<br>18<br>T J = - 40 [o] C<br>16<br>14<br>25 [o] C<br>12<br>10 125 [o] C<br>8<br>6<br>4<br>2<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>ID - Amperes<br>Fig. 10. Gate Charge<br>10<br>9 V DS = 400V<br>8 I D = 3.5A<br> I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 5 10 15 20 25 30 35<br>QG - NanoCoulombs<br> - Siemens<br>f s<br>g<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **==> picture [258 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> 10,000<br>f = 1 MHz<br>Ciss<br>1,000<br>C oss<br>100<br>Crss<br>10<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> **Fig. 12. Forward-Bias Safe Operating Area** **==> picture [252 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>25μs<br>100μs<br>1ms<br>R DS(on) Limit<br>10<br>1<br> T J = 150 [o] C<br> T C = 25 [o] C<br> Single Pulse<br>0.1<br>10 100 1,000<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. ## **IXFA10N80P IXFH10N80P IXFP10N80P IXFQ10N80P** **==> picture [538 x 279] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 13. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - K / W<br> (th)JC<br>Z<br>**----- End of picture text -----**<br> © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_10N80P(5J)8-18-09-A **==> picture [185 x 29] intentionally omitted <==** **----- Start of picture text -----**<br> IXFA10N80P IXFP10N80P<br>IXFQ10N80P IXFH10N80P<br>**----- End of picture text -----**<br> **==> picture [345 x 149] intentionally omitted <==** **----- Start of picture text -----**<br> TO-263 Outline TO-220 Outline<br>it | | Fai | -000 | 008 | 0.00 [0.20] | 71 Toba<br>i<br>tiaezehly w Ui|} [—7028T-.035 [0.70 | 0.90 | |<br>Jos Lop) Lol | Pea poss f060) 1181 1521] | |<br>©, [aE rc [018 | 024 | 0.451 0.60 | o |m<br>ieee] 33 ji<br>1 - Gate<br>LAW EC 3 ee ca<br>2,4 - Drain 1 - Gate<br>3 - Source chops = -o0ene[ L1 | .039 | .060 | 1.00 | 1.52 | 2,4 - Drain<br>Poa Toot =ti]) t=] 3 - Source<br>**----- End of picture text -----**<br> **==> picture [154 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> TO-247 Outline<br>—<br>ate LeP=FEI | USk@n<br>el EL<br>ot OvfES &<br>L<br>123<br>u ss omnt<br>el<br>t<br>1 - Gate<br>2,4 - Drain<br>c w aL | 3 - Source<br>**----- End of picture text -----**<br> **==> picture [135 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> TO-3P Outline E<br>| A op<br>r\)<br>(/ REL ak<br>oO<br>! D1<br>1 3<br>Lif aim Le<br>mi<br>j<br>lp eS 1 - Gate<br>2,4 - Drain<br>at 3 - Source<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 29, 2026
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