Illustrative purposes only
IXFH10N80P
Power MOSFET, N Channel, 800 V, 10 A, 1.1 ohm, TO-247, Through Hole
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Product variants: No other variants available. No other names.
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: Polar HiPerFET
- Power Dissipation: 300W
- Transistor Mounting: Through Hole
- Transistor Polarity: N Channel
- Power Dissipation Pd: 300W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 1.1ohm
- Transistor Case Style: TO-247
- Drain Source Voltage Vds: 800V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 10A
- Drain Source On State Resistance: 1.1ohm
- Gate Source Threshold Voltage Max: 5.5V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 2.3 € |
| Current stock | 240 |
| Lead time | 7 days |