IXFH10N100P

Power MOSFET, N Channel, 1 kV, 10 A, 1.4 ohm, TO-247AD, Through Hole

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Manufacturer: IXYS SEMICONDUCTOR
Product type: Single MOSFETs
SVHC: Lead (21-Jan-2025)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: Polar HiPerFET
Qualification: -
Power Dissipation: 380W
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-247AD
Drain Source Voltage Vds: 1kV
Operating Temperature Max: 150°C
Continuous Drain Current Id: 10A
Drain Source On State Resistance: 1.4ohm
Gate Source Threshold Voltage Max: 6.5V

Delivery and price
Units per pack	250
Price	3.53 €
Current stock	500+
Lead time	30 days

Datasheet

## **Polar[TM ] HiPerFET[TM] Power MOSFET** 

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 

## **IXFH10N100P** 

**V =   1000V DSS I =   10A D25 R ≤ 1.4 Ω DS(on) t ≤ 300ns rr** 

## **TO-247 AD** 

|**Symbol**|**Test Conditions**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**|
|---|---|---|---|---|
|**VDSS**|TJ|= 25°C to 150°C|1000|V|
|**VDGR**|TJ|= 25°C to 150°C, RGS= 1MΩ|1000|V|
|**VGSS**|Continuous||±30|V|
|**VGSM**|Transient||±40|V|
|**ID25**|TC|= 25°C|10|A|
|**IDM**|TC|= 25°C, Pulse Width Limited by TJM|25|A|
|**IA**|TC|= 25°C|5|A|
|**EAS**|TC|= 25°C|500|mJ|
|**dv/dt**|IS|≤IDM,  VDD ≤VDSS, TJ ≤150°C|15|V/ns|
|**PD**|TC|= 25°C|380|W|
|**TJ**|||-55 ... +150|°C|
|**TJM**|||150|°C|
|**Tstg**|||-55 ... +150|°C|
|**TL**|Maximum Lead Temperature for Soldering                     300||Maximum Lead Temperature for Soldering                     300|°C|
|**TSOLD**1.6 mm (0.062in.) from Case for 10s                              260                   °C|1.6 mm (0.062in.) from Case for 10s                              260                   °C|1.6 mm (0.062in.) from Case for 10s                              260                   °C|1.6 mm (0.062in.) from Case for 10s                              260                   °C|1.6 mm (0.062in.) from Case for 10s                              260                   °C|
|**Md**|Mounting Torque<br>1.13/10||1.13/10|Nm/lb.in.|
|**Weight**||6|6|g|



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G<br>D   Tab<br>S<br>G  =  Gate   D      =   Drain<br>S  =  Source   Tab  =   Drian<br>**----- End of picture text -----**<br>


## **Features** 

International Standard Package Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance 

## **Advantages** 

High Power Density Easy to Mount Space Savings 

## **Applications** 

Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls 

|**Symbol**<br>(T= 25°C, Unless Otherwise Specified)<br>**Min.      Typ.      Max.**|**Min.      Typ.      Max.**<br>~~ae~~|**Min.      Typ.      Max.**<br>~~ae~~|
|---|---|---|
|(TJ= 25°C, Unless Otherwise Specified)<br>**Min.      Typ.      Max.**|**Min.      Typ.      Max.**<br>~~ae~~|**Min.      Typ.      Max.**<br>~~ae~~|
|**BVDSS**<br>VGS = 0V, ID= 1mA<br>1000<br>~~|~~|~~ae~~<br>~~|~~|V<br>~~ae~~|
|**VGS(th)**<br>VDS = VGS, ID= 1mA<br>3.5 6.5<br>~~||~~|6.5<br>~~ae~~<br>~~||~~|6.5<br>V<br>~~ae~~|
|**IGSS**<br>VGS =±30V, VDS= 0V<br>±<br>~~||~~|±<br>~~||~~|±100<br>nA|
|**IDSS**<br>VDS =  VDSS, VGS= 0V<br>25<br>TJ= 125°C<br>1.25  mA<br>~~|~~|25<br>1.25  mA<br>~~|=~~|25<br>μA<br>1.25  mA|
|**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25,  Note 1<br>1.4|1.4<br>~~||~~|1.4Ω|



DS99922A(03/13) 

© 2013 IXYS CORPORATION, All Rights Reserved 

## **IXFH10N100P** 

|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|
|---|---|---|---|
|(TJ= 25°C Unless Otherwise Specified)**Min.**||**Typ.**|**Max.**|
|**gfs**<br>VDS = 20V, ID= 0.5 • ID25, Note 1                   4.2||6.5|S|
|**Ciss**<br>**Coss**<br>**Crss**|<br>VGS = 0V, VDS= 25V, f = 1MHz<br> <br>|3030<br>200<br>34|pF<br>pF<br>pF|
|**RGi**<br>Gate Input Resistance<br>||1.8|Ω|
|**td(on)**<br> <br>**tr**<br>   <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG<br>= 3.3Ω(External)||38<br>45<br>47<br>75|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**<br>VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br> <br>**Qgd**<br>||56<br>19<br>30|nC<br>nC<br>nC|
|**RthJC**<br>**RthCS**<br>||<br>0.21|0.33 °C/W<br>°C/W|



## **Source-Drain Diode** 

|**Source-Drain Diode**|**Source-Drain Diode**|**Source-Drain Diode**|
|---|---|---|
|**Characteristic Values**<br>|||
|TJ= 25°C Unless Otherwise Specified)**Min.**|**Typ.**|**Max.**|
|**IS**<br>VGS= 0V||10<br>A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM||40<br>A|
|**VSD**<br>IF= IS, VGS= 0V, Note 1||1.5<br>V|
|**trr**<br>**I**<br> <br>IF= 5A, -di/dt = 100A/μs<br>VR= 100V, VGS = 0V|<br>7.3|300 ns<br>A|
|**RM**|||



|**IXFH10N100P**||
|---|---|
|e<br>∅P<br> **TO-247 (IXFH) Outline**<br> **1       2       3**<br>Terminals: 1 - Gate<br>2 - Drain<br>3 - Source<br>Dim.<br>Millimeter<br>Inches<br>Min.<br>Max.<br>Min.<br>Max.<br>A<br>4.7<br>5.3<br>.185<br>.209<br>A1<br>2.2<br>2.54<br>.087<br>.102<br>A2<br>2.2<br>2.6<br>.059<br>.098<br>b<br>1.0<br>1.4<br>.040<br>.055<br>b1<br>1.65<br>2.13<br>.065<br>.084<br>b2<br>2.87<br>3.12<br>.113<br>.123<br>C<br>.4<br>.8<br>.016<br>.031<br>D<br>20.80<br>21.46<br>.819<br>.845<br>E<br>15.75<br>16.26<br>.610<br>.640<br>e<br>5.20<br>5.72<br>0.205 0.225<br>L<br>19.81<br>20.32<br>.780<br>.800<br>L1<br>4.50<br>.177<br>∅P<br>3.55<br>3.65<br>.140<br>.144<br>Q<br>5.89<br>6.40<br>0.232 0.252<br>R<br>4.32<br>5.49<br>.170<br>.216<br>S<br>6.15 BSC<br>242 BSC||
|||



Note        1:  Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

## **IXFH10N100P** 

**Fig. 1. Output Characteristics @ TJ = 25ºC** 

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10<br>VGS = 15V<br>9<br>      10V<br>8<br>7<br>9V<br>6<br>5<br>4<br>3<br>8V<br>2<br>1<br>7V<br>0<br>0 2 4 6 8 10 12 14<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>20<br>18 V GS = 15V<br>           10V<br>16<br>14<br>12<br>10<br>8 9V<br>6<br>4<br>8V<br>2<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


## **Fig. 3. Output Characteristics @ TJ = 125ºC** 

## **Fig. 4. RDS(on) Normalized to ID = 5A Value vs. Junction Temperature** 

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10 3.2<br>9 V          9V  GS = 15V  2.8 VGS = 10V<br>8<br>7 2.4 I D = 10A<br>6<br>2.0<br>8V<br>5 I D = 5A<br>1.6<br>4<br>3 1.2<br>2<br>7V<br>0.8<br>1<br>0 0.4<br>0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 5A Value vs. Fig. 6. Maximum Drain Current vs.<br> Drain Current Case Temperature<br>2.8 11<br>2.6 V GS = 10V 10<br>2.4 TJ = 125 º C 9<br>8<br>2.2<br>7<br>2.0<br>6<br>1.8<br>5<br>1.6<br>4<br>1.4<br>3<br>1.2 T J  = 25ºC 2<br>1.0 1<br>0.8 0<br>0 2 4 6 8 10 12 14 16 18 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


© 2013 IXYS CORPORATION, All Rights Reserved 

**IXFH10N100P** 

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Fig. 7. Input Admittance<br>10<br>9<br>8<br>7<br>6<br>TJ = 125ºC<br>5<br>4 25ºC<br>3<br>- 40ºC<br>2<br>1<br>0<br>5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>30<br>25<br>20<br>15<br>10 TJ = 125ºC<br>5 TJ  = 25ºC<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1<br>VSD - Volts<br> - Amperes<br>IS<br>**----- End of picture text -----**<br>


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Fig. 8. Transconductance<br>14<br>T J = - 40ºC<br>12<br>10<br>25ºC<br>8<br>125ºC<br>6<br>4<br>2<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br>


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Fig. 10. Gate Charge<br>16<br>14  VDS = 500V<br> I D = 5A<br>12  I  G = 10mA<br>10<br>8<br>6<br>4<br>2<br>0<br>0 10 20 30 40 50 60 70 80<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

**Fig. 12. Forward-Bias Safe Operating Area** 

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**----- Start of picture text -----**<br>
10,000 100<br>f = 1 MHz<br>RDS(on) Limit<br>Ciss 10<br>25µs<br>1,000<br>100µs<br>1<br>1ms<br>100 Coss<br>10ms<br>0.1 TJ = 150ºC 100ms<br>TC = 25ºC    DC<br>Crss Single Pulse<br>10 0.01<br>0 5 10 15 20 25 30 35 40 10 100 1,000<br>VDS - Volts VDS - Volts<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXFH10N100P** 

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**----- Start of picture text -----**<br>
Fig. 13. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2013 IXYS CORPORATION, All Rights Reserved 

IXYS REF: F_10N100P (65)03-12-13-A 

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Updated at April 29, 2026

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