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IXFB44N100P
Power MOSFET, N Channel, 1 kV, 44 A, 0.22 ohm, PLUS264, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- SVHC: Lead (21-Jan-2025)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: Polar HiPerFET Series
- Qualification: -
- Power Dissipation: 1.25kW
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: PLUS264
- Drain Source Voltage Vds: 1kV
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 44A
- Drain Source On State Resistance: 0.22ohm
- Gate Source Threshold Voltage Max: 6.5V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 17.52 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
## **Polar[TM ] Power MOSFET** ## **HiPerFET[TM]** N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ## **IXFB44N100P** **V = 1000V DSS I = 44A D25 R ≤ 220m Ω DS(on) t ≤ 300ns rr** |**Symbol**|**Test Conditions**|**Test Conditions**|**Maximum Ratings**|| |---|---|---|---|---| |**VDSS**|TJ|= 25°C to 150°C|1000|V| |**VDGR**|TJ|= 25°C to 150°C, RGS= 1MΩ|1000|V| |**VGSS**|Continuous||±30|V| |**VGSM**|Transient||±40|V| |**ID25**|TC|= 25°C|44|A| |**IDM**|TC|= 25°C, pulse width limited by TJM|110|A| |**IAR**|TC|= 25°C|22|A| |**EAS**|TC|= 25°C|2|J| |**dV/dt**|IS|≤IDM, VDD ≤VDSS, TJ ≤150°C|15|V/ns| |**PD**|TC|= 25°C|1250|W| |**TJ**|||-55 ... +150|°C| |**TJM**|||150|°C| |**Tstg**|||-55 ... +150|°C| |**TL**|1.6mm (0.062 in.) from case for 10s||300|°C| |**TSOLD**|Plastic body for 10s 260||Plastic body for 10s 260°|°C| |**FC**|Mounting torque<br>30..120/6.7..27||30..120/6.7..27|N/lb.| |**Weight**||10 g|10 g|10 g| ## **PLUS264[TM] (IXFB)** G (TAB) D S G = Gate D = Drain S = Source TAB = Drain ## **Features** Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect ## **Advantages** Plus 264[TM] package for clip or spring mounting Space savings High power density ## **Applications** |(TJ= 25°C, unless otherwise specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**<br>~~—S~~|**Min. Typ. Max.**| |---|---|---| |**BVDSS**<br>VGS = 0V, ID= 3mA<br>1000|~~—S~~|V| |**VGS(th)**<br>VDS = VGS, ID= 1mA<br>3.5 6.5 V|6.5 V<br>~~—S~~|6.5 V| |**IGSS**<br>VGS =±30V, VDS= 0V<br>±|±<br>~~—~~|±200 nA<br>~~—~~| |**IDSS**<br>VDS = VDSS<br>50<br>VGS = 0V<br>TJ= 125°C<br>3 mA|50<br>3 mA<br>~~_~~|50<br>μA<br>3 mA<br>~~_~~| |**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25,Note 1<br>220 m|220 m<br>|||220 mΩ| DS99867A(04/08) © 2008 IXYS CORPORATION, All rights reserved ## **IXFB44N100P** |(TC unless otherwise specified)**Min. Typ. Max.**|(TC unless otherwise specified)**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---|---| |(TJ= 25°C unless otherwise specified)**Min. Typ. Max.**||**Min. Typ. Max.**|**Min. Typ. Max.**| |**gfs**<br>VDS = 20V, ID= 0.5 • ID25, Note 1<br>20 35||20 35|S| ||||| |**Ciss**<br>**Coss**<br>**Crss**|19<br>VGS = 0V, VDS= 25V, f = 1MHz<br>1060<br>41|19<br>1060<br>41|nF<br>pF<br>pF| |**RGi**<br>Gate input resistance<br>1.70||1.70<br>~~|~~|Ω| |**td(on)**<br>**Resistive Switching Times**<br>60<br>**tr**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>68<br>**td(off)**<br>RG<br>= 1Ω(External)<br>90<br>**tf**<br>56||60<br>68<br>90<br>56|ns<br>ns<br>ns<br>ns| |**Qg(on)**<br>305<br>**Qgs**<br>VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>104<br>**Qgd**<br>126<br>\||305<br>104<br>126|nC<br>nC<br>nC| |**RthJC**<br>**RthCS**<br>0.13||0.10<br>0.13|0.10<br>°C/W<br>°C/W| **PLUS264[TM] (IXFB) Outline** |T= 25°C unless otherwise specified)**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |TJ= 25°C unless otherwise specified)**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**IS**<br>VGS= 0V|44|44<br>A| |**ISM**<br>Repetitive, pulse width limited by TJM||176 A| |**VSD**<br>IF= IS, VGS= 0V, Note 1|1.5|1.5<br>V| |**trr**<br>**QRM**<br>2.5<br>**IRM**<br>17<br>IF= 22A, -di/dt = 100A/μs<br>VR= 100V|300<br>2.5<br>17|300<br>ns<br>μC<br>A| Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. ## **PRELIMINARY TECHNICAL INFORMATION** The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 **IXFB44N100P** **Fig. 1. Output Characteristics @ 25ºC** **==> picture [249 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 45<br>VGS = 10V<br>40 9V<br>35<br>30<br>8V<br>25<br>20<br>15<br>10<br>7V<br>5<br>0<br>0 1 2 3 4 5 6 7 8 9 10 11<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 3. Output Characteristics @ 125ºC** **==> picture [251 x 386] intentionally omitted <==** **----- Start of picture text -----**<br> 45<br>VGS = 10V<br>40 8V<br>35<br>30<br>25<br>20<br>7V<br>15<br>10<br>5 6V<br>0<br>0 2 4 6 8 10 12 14 16 18 20 22 24<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 22A Value<br>vs. Drain Current<br>2.6<br> V GS = 10V T J = 125ºC<br>2.4<br>2.2<br>2.0<br>1.8<br>1.6<br>1.4 TJ = 25ºC<br>1.2<br>1.0<br>0.8<br>0 10 20 30 40 50 60 70 80 90<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Fig. 2. Extended Output Characteristics @ 25ºC** **==> picture [250 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 90<br>V GS = 10V<br>80 9V<br>70<br>60<br>50<br>40<br>30 8V<br>20<br>10 7V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 4. RDS(on) Normalized to ID = 22A Value vs. Junction Temperature** **==> picture [252 x 383] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0<br>2.8<br> VGS = 10V<br>2.6<br>2.4<br>2.2<br>2.0<br>I D = 44A<br>1.8<br>1.6<br>I D = 22A<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br>Fig. 6. Maximum Drain Current vs.<br>Case Temperature<br>50<br>45<br>40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> © 2008 IXYS CORPORATION, All rights reserved **IXFB44N100P** **==> picture [262 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance<br>50<br>45<br>40<br>35 T J = 125ºC<br> 25ºC<br>30 - 40ºC<br>25<br>20<br>15<br>10<br>5<br>0<br>5 5.5 6 6.5 7 7.5 8 8.5 9<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> ## **Fig. 9. Forward Voltage Drop of Intrinsic Diode** **==> picture [254 x 388] intentionally omitted <==** **----- Start of picture text -----**<br> 130<br>120<br>110<br>100<br>90<br>80<br>70<br>60<br>50<br>TJ = 125ºC<br>40<br>30 TJ = 25ºC<br>20<br>10<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2<br>VSD - Volts<br>Fig. 11. Capacitance<br>100,000<br> f = 1 MHz<br>10,000 Ciss<br>1,000<br>Coss<br>100<br>Crss<br>10<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br> - Amperes<br>IS<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> **==> picture [120 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 8. Transconductance<br>**----- End of picture text -----**<br> **==> picture [249 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 60<br>55 TJ = - 40ºC<br>50<br>45 25ºC<br>40<br>35 125ºC<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>0 5 10 15 20 25 30 35 40 45 50<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br> **Fig. 10. Gate Charge** **==> picture [248 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>14 VDS = 500V<br> I D = 22A<br>12 I G = 10mA<br>10<br>8<br>6<br>4<br>2<br>0<br>0 50 100 150 200 250 300 350 400 450<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br> **Fig. 12. Maximum Transient Thermal Impedance** **==> picture [250 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 1.000<br>0.100<br>0.010<br>0.001<br>0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_44N100P(97)4-01-08-D **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 29, 2026
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