IXFB30N120P

Power MOSFET, N Channel, 1.2 kV, 30 A, 0.35 ohm, PLUS264, Through Hole

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Manufacturer: IXYS SEMICONDUCTOR
Product type: Single MOSFETs
SVHC: Lead (21-Jan-2025)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: Polar HiPerFET
Qualification: -
Power Dissipation: 1.25kW
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Transistor Case Style: PLUS264
Drain Source Voltage Vds: 1.2kV
Operating Temperature Max: 150°C
Continuous Drain Current Id: 30A
Drain Source On State Resistance: 0.35ohm
Gate Source Threshold Voltage Max: 6.5V

Delivery and price
Units per pack	50
Price	28.27 €
Current stock	100+
Lead time	30 days

Datasheet

## **Polar[TM ] HiPerFET[TM] Power MOSFET** 

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 

## **IXFB30N120P** 

**V =   1200V DSS I =   30A D25 R ≤ 350m Ω DS(on) t ≤ 300ns rr** 

## **PLUS264[TM]** 

|**Symbol**|**Test Conditions**|**Test Conditions**|**Maximum Ratings**||
|---|---|---|---|---|
|**VDSS**|TJ|= 25°C to 150°C|1200|V|
|**VDGR**|TJ|= 25°C to 150°C, RGS= 1MΩ|1200|V|
|**VGSS**|Continuous||±30|V|
|**VGSM**|Transient||±40|V|
|**ID25**|TC|= 25°C|30|A|
|**IDM**|TC|= 25°C, Pulse Width Limited by TJM|75|A|
|**IA**|TC|= 25°C|15|A|
|**EAS**|TC|= 25°C|2.0|J|
|**dv/dt**|IS|≤IDM,  VDD ≤VDSS, TJ ≤150°C|15|V/ns|
|**PD**|TC|= 25°C|1250|W|
|**TJ**|||-55 ... +150|°C|
|**TJM**|||150|°C|
|**Tstg**|||-55 ... +150|°C|
|**TL**|1.6mm (0.062 in.) from Case for 10s||300|°C|
|**TSOLD**|Plastic Body for 10s                                                        260                   °C||Plastic Body for 10s                                                        260                   °C|Plastic Body for 10s                                                        260                   °C|
|**FC**|Mounting Torque<br>30..120/6.7..27||30..120/6.7..27|N/lb.|
|**Weight**||10                     g|10                     g|10                     g|



G D S Tab G  = Gate D      = Drain S   = Source Tab  = Drain 

## **Features** 

Fast Intrinsic Diode Avalanche Rated Low RDS(ON) and QG Low Package Inductance 

## **Advantages** 

Plus 264[TM] Package for Clip or Spring Mounting High Power Density Easy to Mount Space Savings 

**Applications** 

|**Symbol**<br>(T= 25°C, Unless Otherwise Specified)<br>**Min.      Typ.     Max.**|**Min.      Typ.     Max.**<br>~~—~~|**Min.      Typ.     Max.**<br>~~—~~|
|---|---|---|
|(TJ= 25°C, Unless Otherwise Specified)<br>**Min.      Typ.     Max.**|**Min.      Typ.     Max.**<br>~~—~~|**Min.      Typ.     Max.**<br>~~—~~|
|**BVDSS**<br>VGS = 0V, ID= 3mA<br>1200|~~—~~|V<br>~~—~~|
|**VGS(th)**<br>VDS = VGS, ID= 1mA<br>3.5 6.5|6.5<br>~~—~~<br>~~=~~|6.5<br>V<br>~~—~~<br>~~=~~|
|**IGSS**<br>VGS =±30V, VDS= 0V<br>±|±<br>~~=~~|±300<br>nA<br>~~=~~|
|**IDSS**<br>VDS =  VDSS, VGS=  0V<br>50<br>TJ= 125°C<br>5.0   mA|50<br>5.0   mA<br>~~_~~|50<br>μA<br>5.0   mA|
|**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25,  Note 1<br>350|350|350 mΩ|



High Voltage Switch-Mode and Resonant-Mode Power Supplies High Voltage Pulse Power Applications High Voltage Discharge Circuits in Laser Pulsers Spark Igniters, RF Generators High Voltage DC-DC Coverters[:] High Voltage DC-AC Inverters 

DS99825B(02/10) 

© 2010 IXYS CORPORATION, All Rights Reserved 

## **IXFB30N120P** 

|(TC Unless Otherwise Specified)**Min.      Typ.           Max.**|**Min.      Typ.           Max.**|**Min.      Typ.           Max.**|
|---|---|---|
|(TJ= 25°C Unless Otherwise Specified)**Min.      Typ.           Max.**|**Min.      Typ.           Max.**|**Min.      Typ.           Max.**|
|**gfs**<br>VDS = 20V, ID= 0.5 • ID25, Note 1<br>13          22|13          22|S|
|**Ciss**<br>22.5<br>**Coss**<br>VGS = 0V, VDS= 25V, f = 1MHz<br>950<br>**Crss**<br>28|22.5<br>950<br>28<br>~~|~~|nF<br>pF<br>pF|
|**RGi**<br>Gate Input Resistance<br>1.64|1.64<br>~~|~~|Ω|
|**td(on)**<br>57<br>**tr**<br>60<br>**td(off)**<br>95<br>**tf**<br>56<br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 1Ω(External)|57<br>60<br>95<br>56|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br>310<br>**Qgs**<br>VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>104<br>**Qgd**<br>137<br>\|310<br>104<br>137|nC<br>nC<br>nC|
|**RthJC**<br>**RthCS**<br>0.13|0.10<br>0.13|0.10<br>°C/W<br>°C/W|



**PLUS264[TM] (IXFB) Outline** 

## **Source-Drain Diode** 

|**Symbol**<br>(T= 25°C, Unless Otherwise Specified)<br>**Min.      Typ.     Max.**|**Min.      Typ.     Max.**|**Min.      Typ.     Max.**|
|---|---|---|
|(TJ= 25°C, Unless Otherwise Specified)<br>**Min.      Typ.     Max.**|**Min.      Typ.     Max.**|**Min.      Typ.     Max.**|
|**IS**<br>VGS= 0V|30|30<br>A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM|120|120<br>A|
|**VSD**<br>IF= IS, VGS= 0V, Note 1|1.5|1.5<br>V|
|**trr**<br>**QRM**<br>1.6<br>**IRM**<br>14<br>IF= 0.5 • ID25, VGS= 0V<br>-di/dt = 100A/μs<br>VR= 100V|300<br>1.6<br>14|300 ns<br>μC<br>A|



Note 1:  Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXFB30N120P** 

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**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = @ 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>30 70<br>VGSGS = 10V<br>VGS = 10V  9VV<br>25 60<br>8V 50<br>20<br>40 8V<br>15<br>30<br>10 7V<br>20<br>7V<br>5<br>10<br>6V 6V<br>0 0<br>0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25<br>VDS - Volts VDS - VoltsDS - Volts - Volts<br> - AmperesID  - AmperesIDD<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
70<br>VGSGS = 10V<br>9VV<br>60<br>50<br>40 8V<br>30<br>20<br>7V<br>10<br>6V<br>0<br>0 5 10 15 20 25 30<br>VDS - VoltsDS - Volts - Volts<br>ID - AmperesIDD<br>**----- End of picture text -----**<br>


**Fig. 3. Output Characteristics @ TJ = 125ºC** 

**==> picture [253 x 385] intentionally omitted <==**

**----- Start of picture text -----**<br>
30<br>VGS = 10V<br>             8V<br>25<br>20 7V<br>15<br>10<br>6V<br>5<br>5V<br>0<br>0 2 4 6 8 10 12 14 16 18 20 22<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 15A Value vs.<br>Drain Current<br>2.6<br>2.4  V GS = 10V  T J  = 125ºC<br>2.2<br>2<br>1.8<br>1.6<br>1.4<br>1.2<br>1 TJ = 25ºC<br>0.8<br>0 10 20 30 40 50 60 70<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Fig. 4. RDS(on) Normalized to ID = 15A Value vs. Junction Temperature** 

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**----- Start of picture text -----**<br>
3.0<br> VGS = 10V<br>2.6<br>2.2<br>I  D  = 30A<br>1.8<br>I D = 15A<br>1.4<br>1.0<br>0.6<br>0.2<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Fig. 6. Maximum Drain Current vs. Case Temperature** 

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**----- Start of picture text -----**<br>
35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


© 2010 IXYS CORPORATION, All Rights Reserved 

**IXFB30N120P** 

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**----- Start of picture text -----**<br>
Fig. 7. Input Admittance<br>30<br>25<br>20 TJ = 125ºC<br>          25ºC<br>        - 40ºC<br>15<br>10<br>5<br>0<br>4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0<br>VGS - Volts<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>90<br>80<br>70<br>60<br>50<br>40<br>TJ = 125ºC<br>30<br>TJ  = 25ºC<br>20<br>10<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3<br>VSD - Volts<br> - Amperes<br>ID<br> - Amperes<br>IS<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 8. Transconductance<br>35<br>T J = - 40ºC<br>30<br>25ºC<br>25<br>125ºC<br>20<br>15<br>10<br>5<br>0<br>0 5 10 15 20 25 30<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br>


**Fig. 10. Gate Charge** 

**==> picture [250 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
16<br>14  VDS = 600V<br> I  D = 15A<br>12  I  G  = 10mA<br>10<br>8<br>6<br>4<br>2<br>0<br>0 50 100 150 200 250 300 350 400 450<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

**Fig. 12. Forward-Bias Safe Operating Area** 

**==> picture [533 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
100,000 100<br>f = 1 MHz RDS(on) Limit<br>100µs<br>10,000 Ciss<br>10<br>1,000 1ms<br>Coss<br>10ms<br>1<br>100 100ms<br>TJ = 150ºC<br>Tc = 25ºC<br>C rss Single Pulse DC<br>10 0.1<br>0 5 10 15 20 25 30 35 40 10 100 1,000 10,000<br>VDS - Volts VDS - Volts<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

**IXFB30N120P** 

**Fig. 12. Maximum Transient Thermal Impedance** 1.000 

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**----- Start of picture text -----**<br>
Fig. 13. Maximum Transient Thermal Impedance<br>0.200<br>0.100<br>0.010<br>0.001<br>0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2010 IXYS CORPORATION, All Rights Reserved 

IXYS REF: F_30N120P(97)2-12-10-D 

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Updated at April 29, 2026

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