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IXFB210N30P3
Power MOSFET, N Channel, 300 V, 210 A, 0.0145 ohm, TO-264, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:210A; Drain Source Voltage Vds:300V; On Resistance Rds(on):0.0145ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; P
- MSL: -
- SVHC: Lead (21-Jan-2025)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 1.89kW
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-264
- Drain Source Voltage Vds: 300V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 210A
- Drain Source On State Resistance: 0.0145ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 16.89 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **Polar3[TM ] HiPerFET[TM] Power MOSFET** **==> picture [222 x 132] intentionally omitted <==** **----- Start of picture text -----**<br> ||||| |---|---|---|---| |V|= 300V| |DSS| |I|= 210A| |D25| |R||14.5m|| |D|DS(on)| |t||250ns| |rr| |G| |S| |PLUS264|[TM]| **----- End of picture text -----**<br> ## **IXFB210N30P3** N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier **==> picture [353 x 283] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||| |---|---|---|---|---|---|---| |Symbol|Test Conditions|Maximum Ratings| |VDSS|TJ|= 25C to 150C|300|V| |VDGR|TJ|= 25C to 150C, RGS = 1M|300|V| |VGSS|Continuous|20|V| |VGSM|Transient|30|V| |ID25|TC|= 25C (Chip Capability)|210|A| |I|External Lead Current Limit 160|A| |L(RMS)| |IDM|TC|= 25C, Pulse Width Limited by TJM|550|A| |IA|TC|= 25C|105|A| |EAS|TC|= 25C|4|J| |dv/dt|IS| IDM, VDD| VDSS, TJ| 150C|35|V/ns| |PD|TC|= 25C|1890|W| |TJ|-55 ... +150|C| |TJM|150|C| |Tstg|-55 ... +150|C| |TL|Maximum Lead Temperature for Soldering 300|°C| |TSOLD|1.6 mm (0.062in.) from Case for 10s 260|°C| |FC|Mounting Force|30..120/6.7..27|N/lb| |Weight|10 g| **----- End of picture text -----**<br> **==> picture [118 x 71] intentionally omitted <==** **----- Start of picture text -----**<br> ||| |---|---| |G| |D| |S| |Tab| |G = Gate|D = Drain| |S = Source|Tab = Drain| **----- End of picture text -----**<br> ## **Features** - Dynamic dv/dt Rating - Avalanche Rated - Fast Intrinsic Rectifier - Low R DS(on) - Low Drain-to-Tab Capacitance - Low Package Inductance ## **Advantages** - Easy to Mount - Space Savings ## **Applications** **==> picture [353 x 129] intentionally omitted <==** **----- Start of picture text -----**<br> |||||| |---|---|---|---|---| |Symbol|Test Conditions|Characteristic Values| |(TJ = 25C Unless Otherwise Specified)|Min. Typ. Max.| |BVDSS|VGS|= 0V, ID = 3mA 300|V| ||||| |VGS(th)|VDS|= VGS, ID = 8mA 2.5 5.0 V| ||| |IGSS|VGS|= 20V, VDS = 0V|200 nA| ||| |IDSS|VDS|= VDSS, VGS = 0V|50|A| |TJ = 125C|1.5 mA|_| |RDS(on)|VGS|= 10V, ID = 0.5 • IDSS, Note 1|14.5 m| ||| **----- End of picture text -----**<br> - DC-DC Converters - Battery Chargers - Switch-Mode and Resonant-Mode - Power Supplies - Uninterrupted Power Supplies - AC Motor Drives - High Speed Power Switching - Applications DS100463B(1/20) © 2020 IXYS CORPORATION, All Rights Reserved ## **IXFB210N30P3** |**Symbol**<br>**Test Conditions**<br>**Characteristic Values**|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**| |---|---|---| |(TJ= 25C Unless Otherwise Specified)**Min.**|**Typ.**|**Max.**| |**gfs**<br>VDS= 10V, ID= 60A, Note 1 60|100|S| |**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|16.2<br>2550<br>42|nF<br>pF<br>pF| |**RGi**<br>Gate Input Resistance<br>|1.0|| |||| |**td(on)**<br> <br>**t**r<br> <br>**td(off)**<br> <br>**t**f<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • IDSS<br>RG= 1(External)|46<br>25<br>94<br>13|ns<br>ns<br>ns<br>ns| |**Qg(on)**<br> <br>**Qgs**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • IDSS<br> <br>**Q**<br>|268<br>80<br>72|nC<br>nC<br>nC| |**gd**<br>||| |**RthJC**<br> <br>**RthCS**<br>|<br>0.13|0.066C/W<br>C/W| ## **Source-Drain Diode** |**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>| |---|---|---| |(TJ= 25C Unless Otherwise Specified)**Min.**|**Typ.**|**Max.**| |**IS**<br>VGS= 0V||210 A| |**ISM**<br>Repetitive, Pulse Width Limited by TJM||840 A| |**VSD**<br>IF= 100A, VGS= 0V, Note 1||1.5 V| |**trr**<br> <br>**QRM**<br> <br>**IRM** <br>IF= 105A, -di/dt = 100A/s<br>VR= 100V, VGS= 0V|<br>4.1<br>28|250 ns<br>C<br> A| Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 **IXFB210N30P3** **==> picture [264 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25ºC<br>VGS = 10V<br>200<br> 8V<br>160 7V<br>120<br>80<br>6V<br>40<br>5V<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 3. Output Characteristics @ TJ = 125ºC** **==> picture [256 x 399] intentionally omitted <==** **----- Start of picture text -----**<br> VGS = 10V<br>200<br> 8V<br> 7V<br>160<br>120 6V<br>80<br>5V<br>40<br>4V<br>0<br>0 1 2 3 4 5 6 7<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 105A Value vs.<br>Drain Current<br>2.6<br>2.4 V GS = 10V<br>T J = 125ºC<br>2.2<br>2.0<br>1.8<br>1.6<br>1.4<br>1.2 TJ = 25 º C<br>1.0<br>0.8<br>0 50 100 150 200 250 300<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **==> picture [264 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>300 V GS = 10V<br> 8V<br>250<br>7V<br>200<br>150<br>100 6V<br>50<br>5V<br>0<br>0 5 10 15 20<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 4. RDS(on) Normalized to ID = 105A Value vs. Junction Temperature** **==> picture [257 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0<br>V GS = 10V<br>2.6<br>2.2<br>I D = 210A<br>1.8<br>I D = 105A<br>1.4<br>1.0<br>0.6<br>0.2<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Fig. 6. Maximum Drain Current vs. Case Temperature** **==> picture [256 x 185] intentionally omitted <==** **----- Start of picture text -----**<br> 180<br>160<br>External Lead Current Limit<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> © 2020 IXYS CORPORATION, All Rights Reserved **IXFB210N30P3** **==> picture [264 x 427] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance<br>200<br>180<br>160<br>140<br>120<br>100<br>80 T J = 125ºC<br>25ºC<br>60 - 40ºC<br>40<br>20<br>0<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0<br>VGS - Volts<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>300<br>250<br>200<br>150<br>100 T J = 125ºC<br>TJ = 25ºC<br>50<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3<br>VSD - Volts<br> - Amperes<br>ID<br> - Amperes<br>IS<br>**----- End of picture text -----**<br> **==> picture [265 x 427] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 8. Transconductance<br>200<br>TJ = - 40ºC<br>160<br>25ºC<br>120 125ºC<br>80<br>40<br>0<br>0 20 40 60 80 100 120 140 160 180 200 220<br>ID - Amperes<br>Fig. 10. Gate Charge<br>10<br>9 VDS = 150V<br> I D = 105A<br>8<br> I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 30 60 90 120 150 180 210 240 270<br>QG - NanoCoulombs<br> - Siemens<br>f s<br>g<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **Fig. 12. Forward-Bias Safe Operating Area** **==> picture [532 x 185] intentionally omitted <==** **----- Start of picture text -----**<br> 100,000 1000<br>f = 1 MHz<br>RDS(on) Limit<br>Ciss<br>25µs<br>10,000 100<br>100µs<br>1,000 Coss 10<br>1ms<br>100 1 TJ = 150ºC 10ms100ms<br>TC = 25ºC DC<br>Crss Single Pulse<br>10 0.1<br>0 5 10 15 20 25 30 35 40 1 10 100 1,000<br>VDS - Volts VDS - Volts<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. **IXFB210N30P3** **==> picture [539 x 272] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 13. Maximum Transient Thermal Impedance<br>0.1<br>0.01<br>0.001<br>0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - K / W<br> (th)JC<br>Z<br>**----- End of picture text -----**<br> © 2020 IXYS CORPORATION, All Rights Reserved IXYS REF: F_210N30P3(K9) 6-22-12 **IXFB210N30P3** **==> picture [177 x 219] intentionally omitted <==** **----- Start of picture text -----**<br> PLUS264 [TM] (IXFB) Outline<br>et<br>| i<br>iy Or<br>le<br>eee<br>4<br>_<br>lot<br>he<br>1 - Gate<br>2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. **IXFB210N30P3** ~~sd~~ Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 IXYS CORPORATION, All Rights Reserved
Updated at April 29, 2026
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