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IXFB132N50P3
Power MOSFET, N Channel, 500 V, 132 A, 0.039 ohm, TO-264, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:132A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.039ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Po
- SVHC: Lead (21-Jan-2025)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 1.89kW
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-264
- Drain Source Voltage Vds: 500V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 132A
- Drain Source On State Resistance: 0.039ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 13.91 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **Polar3[TM ] HiPerFET[TM] Power MOSFET** ## **IXFB132N50P3** N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier **==> picture [352 x 265] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||| |---|---|---|---|---|---|---| |Symbol|Test Conditions|Maximum Ratings| |VDSS|TJ|= 25C to 150C|500|V| |VDGR|TJ|= 25C to 150C, RGS = 1M|500|V| |VGSS|Continuous|30|V| |VGSM|Transient|40|V| |ID25|TC|= 25C|132|A| |IDM|TC|= 25C, Pulse Width Limited by TJM|330|A| |IA|TC|= 25C|66|A| |EAS|TC|= 25C|2|J| |dv/dt|IS| IDM, VDD| VDSS, TJ| 150C|35|V/ns| |PD|TC|= 25C|1890|W| |TJ|-55 ... +150|C| |TJM|150|C| |Tstg|-55 ... +150|C| |TL|Maximum Lead Temperature for Soldering 300|°C| |TSOLD|Plastic Body for 10s|260 °C| |FC|Mounting Force|30..120/6.7..27|N/lb| |Weight|10 g| **----- End of picture text -----**<br> **==> picture [124 x 243] intentionally omitted <==** **----- Start of picture text -----**<br> ||||| |---|---|---|---| |V|= 500V| |DSS| |I|= 132A| |D25| |R||39m|| |DS(on)| |t||250ns| |rr| |PLUS264|[TM]| |G| |D| |S| |Tab| |G = Gate|D = Drain| |S = Source|Tab = Drain| **----- End of picture text -----**<br> ## **Features** - Avalanche Rated - Low Package Inductance - Fast Intrinsic Rectifier - Low RDS(on) and QG ## **Advantages** - Easy to Mount - Space Savings ## **Applications** > DC-DC Converters **==> picture [352 x 126] intentionally omitted <==** **----- Start of picture text -----**<br> |||||| |---|---|---|---|---| |Symbol|Test Conditions|Characteristic Values| |(TJ = 25C Unless Otherwise Specified)|Min. Typ. Max.| |BVDSS|VGS|= 0V, ID = 3mA 500|Pe|V| |VGS(th)|VDS|= VGS, ID = 8mA 3.0 5.0 V| |IGSS|VGS|= 30V, VDS = 0V|—|200 nA| |IDSS|VDS|= VDSS, VGS = 0V|50|A| |TJ = 125C|3 mA||| |RDS(on)|VGS|= 10V, ID = 0.5 • IDSS, Note 1|39 m| ||| **----- End of picture text -----**<br> - Battery Chargers - Switch-Mode and Resonant-Mode - Power Supplies - Uninterrupted Power Supplies - AC Motor Drives - High Speed Power Switching - Applications DS100315C(2/15) © 2015 IXYS CORPORATION, All Rights Reserved ## **IXFB132N50P3** **Symbol Test Conditions** ## **Characteristic Values** |(TJ= 25C Unless Otherwise Specified)**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |**gfs**<br>VDS= 10V, ID= 60A, Note 1 68 110|= 60A, Note 1 68 110|S| |**Ciss**<br>18.6<br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br>1710<br>**Crss**<br>12|18.6<br>1710<br>12|nF<br>pF<br>pF| |**RGi**<br>Gate Input Resistance<br>1.16|1.16|| |**td(on)**<br> <br>**t**r<br>18<br>**td(off)**<br>90<br>**t**f<br>15<br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • IDSS<br>RG= 1(External)|42<br>18<br>90<br>15|ns<br>ns<br>ns<br>ns| |**Qg(on)**<br>267<br>**Qgs**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • IDSS<br>95<br>**Qd**<br>63|267<br>95<br>63|nC<br>nC<br>nC| |**Qgd**<br>63|63|nC| |**RthJC**<br>0.066<br>**RthCS**<br>0.13|0.066<br>0.13|0.066C/W<br>C/W| **==> picture [115 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> PLUS264 [TM] (IXFB) Outline<br>**----- End of picture text -----**<br> ## **Source-Drain Diode** |**Symbol**<br>(T= 25C Unless Otherwise Specified)**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25C Unless Otherwise Specified)**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**IS**<br>VGS= 0V|132 A|132 A| |**ISM**<br>Repetitive, Pulse Width Limited by TJM|530 A|530 A| |**VSD**<br>IF= 100A, VGS= 0V, Note 1|1.5 V|1.5 V| |**trr**<br>250 ns<br>**QRM**<br>1.9<br>**IRM**16.4<br>IF= 66A, -di/dt = 100A/s<br>VR= 100V, VGS= 0V|250 ns<br>1.9<br>16.4|250 ns<br>C<br> A| Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 **IXFB132N50P3** **==> picture [264 x 215] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25ºC<br>140<br>V GS = 10V<br> 8V<br>120<br>7V<br>100<br>80<br>60<br>40<br>6V<br>20<br>5V<br>0<br>0 1 2 3 4 5 6<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [264 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>250<br>VGS = 10V<br> 8V<br>200<br>150<br>7V<br>100<br>50<br>6V<br>5V<br>0<br>0 5 10 15 20 25<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [534 x 427] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 4. RDS(on) Normalized to ID = 66A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125ºC<br>Junction Temperature<br>140 3.2<br>V GS = 10V V GS = 10V<br>120 2.8<br>7V<br>100 2.4<br>I D = 132A<br>80 2.0<br>I D = 66A<br>60 6V 1.6<br>40 1.2<br>20 0.8<br>5V<br>0 0.4<br>0 2 4 6 8 10 12 14 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 66A Value vs. Fig. 6. Maximum Drain Current vs.<br>Drain Current Case Temperature<br>3.0 140<br>V GS = 10V<br>2.6 TJ = 125ºC 120<br>100<br>2.2<br>80<br>1.8<br>60<br>1.4 TJ = 25ºC<br>40<br>1.0<br>20<br>0.6 0<br>0 50 100 150 200 250 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br> © 2015 IXYS CORPORATION, All Rights Reserved **IXFB132N50P3** **==> picture [264 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance<br>160<br>140<br>120 T J = 125ºC<br> 25ºC<br>100 - 40 º C<br>80<br>60<br>40<br>20<br>0<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [264 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>300<br>250<br>200<br>150<br>TJ = 125ºC<br>100<br>TJ = 25ºC<br>50<br>0<br>0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3<br>VSD - Volts<br> - Amperes<br>IS<br>**----- End of picture text -----**<br> **==> picture [264 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 8. Transconductance<br>200<br>TJ = - 40ºC<br>180<br>160<br>140 25ºC<br>120<br>125ºC<br>100<br>80<br>60<br>40<br>20<br>0<br>0 20 40 60 80 100 120 140 160<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br> **Fig. 10. Gate Charge** **==> picture [252 x 185] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>9 VDS = 250V<br> I D = 66A<br>8<br> I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 40 80 120 160 200 240 280<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **==> picture [258 x 179] intentionally omitted <==** **----- Start of picture text -----**<br> 100,000<br>Ciss<br>10,000<br>1,000<br>Coss<br>100<br>10<br>f = 1 MHz Crss<br>1<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> **Fig. 12. Forward-Bias Safe Operating Area** **==> picture [257 x 179] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>RDS(on) Limit<br>25µs<br>100<br>100µs<br>10<br>T J = 150ºC<br>T C = 25ºC<br>Single Pulse 1ms<br>1<br>10 100 1,000<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. ## **IXFB132N50P3** **==> picture [260 x 211] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 13. Resistive Turn-on Rise Time vs.<br> Junction Temperature<br>28<br> RG = 1Ω , VGS = 10V<br>26<br> VDS = 250V<br>24<br>22<br>20 I D = 66A<br>18<br>I D = 100A<br>16<br>14<br>12<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees Centigrade<br> - Nanosecondsr<br>t<br>**----- End of picture text -----**<br> **==> picture [269 x 430] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 15. Resistive Turn-on Switching Times vs.<br> Gate Resistance<br>300 120<br>t r t d(on) - - - -<br>250 TJ = 125ºC, VGS = 10V 100<br>VDS = 250V<br>200 80<br>I D = 100A<br>150 I D = 66A 60<br>100 40<br>50 20<br>0 0<br>1 2 3 4 5 6 7 8 9 10<br>RG - Ohms<br>Fig. 17. Resistive Turn-off Switching Times vs.<br> Drain Current<br>35 130<br> t f t d(off) - - - -<br>30 RG = 1Ω, VGS = 10V 120<br> VDS = 250V<br>25 110<br>TJ = 125ºC<br>20 100<br>15 90<br>TJ = 25ºC<br>10 80<br>5 70<br>30 40 50 60 70 80 90 100<br>ID - Amperes<br> d ( o n )t<br> - Nanoseconds<br>t r<br> - Nanoseconds<br> d ( o f f )t<br> - Nanosecondsf<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br> **==> picture [261 x 211] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 14. Resistive Turn-on Rise Time vs.<br> Drain Current<br>30<br>28 RG = 1Ω , VGS = 10V<br> V DS = 250V<br>26<br>24<br>22 T J = 125ºC<br>20<br>18<br>16 TJ = 25ºC<br>14<br>12<br>10<br>30 40 50 60 70 80 90 100<br>ID - Amperes<br> - Nanosecondsr<br>t<br>**----- End of picture text -----**<br> **==> picture [267 x 427] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 16. Resistive Turn-off Switching Times vs.<br> Junction Temperature<br>24 115<br>t f td(off) - - - -<br>22 110<br>RG = 1Ω, VGS = 10V<br>VDS = 250V<br>20 105<br>18 100<br>I D = 100A<br>16 95<br>14 90<br>I D = 66A<br>12 85<br>10 80<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees Centigrade<br>Fig. 18. Resistive Turn-off Switching Times vs.<br> Gate Resistance<br>300 480<br> t f t d(off) - - - -<br>250 TJ = 125ºC, VGS = 10V 400<br> V DS = 250V I D = 100A<br>200 320<br>150 240<br>I D = 66A<br>100 160<br>50 80<br>0 0<br>1 2 3 4 5 6 7 8 9 10<br>RG - Ohms<br>t<br>d ( o f f )<br> - Nanosecondsf<br>t<br> - Nanoseconds<br> d ( o f f )t<br> - Nanosecondsf<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br> © 2015 IXYS CORPORATION, All Rights Reserved ## **IXFB132N50P3** **==> picture [526 x 210] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 19. Maximum Transient Thermal Impedance<br>0.1<br>0.01<br>0.001<br>0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> **Fig. 20. Cauer Thermal Network** i Ri (CW) Ci (J/C) 1 0.0011707 0.0031990 2 0.0252980 0.0449880 3 0.0280620 0.7284100 4 0.0091690 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_132N50P3(K9-W38) 6-02-14-A **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
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