Image not available
Illustrative purposes only
IXFA7N100P
Power MOSFET, N Channel, 1 kV, 7 A, 1.9 ohm, TO-263 (D2PAK), Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: Lead (21-Jan-2025)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: Polar HiPerFET
- Qualification: -
- Power Dissipation: 300W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-263 (D2PAK)
- Drain Source Voltage Vds: 1kV
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 7A
- Drain Source On State Resistance: 1.9ohm
- Gate Source Threshold Voltage Max: 6V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 2.8 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
## **Polar[ TM ] HiPerFET[TM] Power MOSFET** ## **IXFA7N100P IXFP7N100P IXFH7N100P** N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier |**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**| |---|---|---|---| |**VDSS**|TJ = 25C to 150C|1000|V| |**VDGR**<br>TJ = 25C to 150C, RGS= 1M<br>1000<br>V<br>~~a~~|||| |**VGSS**|Continuous|30|V| |**VGSM**|Transient|40|V| |**ID25**<br>**IDM**|TC = 25C<br>TC = 25C, Pulse Width Limited by TJM|7<br>18|A<br>A| |**IA**|TC = 25C|7|A| |**EAS**|TC = 25C|300|mJ| |**dv/dt**<br>**PD**|IS<br>IDM, VDD VDSS, TJ 150C<br>TC = 25C|10<br>300|V/ns<br>W| |**TJ**<br>**TJM**||-55 ... +150<br>150|C<br>C| |**Tstg**||-55 ... +150|C| |**TL**<br>**TSOLD**|Maximum Lead Temperature for Soldering<br>Plastic Body for 10s|300<br>260|°C<br>°C| |**FC**<br>**Md**|Mounting Force (TO-263) 10..65 / 2.2..14.6<br>Mounting Torque (TO-220 & TO-247)<br>1.13 / 10||N/lb<br>Nm/lb.in| |**Weight**|TO-263|2.5|g| |TO-247|TO-220<br>TO-247|3.0 g<br>6.0 g|3.0 g<br>6.0 g| **V = 1000V DSS I = 7A D25 R 1.9 DS(on)** **==> picture [111 x 246] intentionally omitted <==** **----- Start of picture text -----**<br> TO-263 (IXFA)<br>G<br>S<br>D (Tab)<br>TO-220 (IXFP)<br>G<br>D<br>S<br>D (Tab)<br>TO-247 (IXFH)<br>G<br>D<br>S D (Tab)<br>**----- End of picture text -----**<br> G = Gate D = Drain S = Source Tab = Drain ## **Features** - International Standard Packages - Fast Intrinsic Rectifier - Avalanche Rated - Low RDS(ON) and QG - Low Package Inductance ## **Advantages** **Symbol Test Conditions Characteristic Values** High Power Density (TJ = 25C, Unless Otherwise Specified) **Min. Typ. Max.** Easy to Mount **BVDSS** VGS = 0V, ID = 250A 1000 V Space Savings **VGS(th)** VDS = VGS, ID = 1mA 3.0 6.0 V **Applications IGSS** VGS = 30V, VDS = 0V 100 nA Switch-Mode and Resonant-Mode **IDSS** VDS = VDSS, VGS = 0V 15 A Power Supplies TJ = 125C 1 mA DC-DC Converters Laser Drivers **RDS(on)** VGS = 10V, ID = 0.5 **•** ID25, Note 1 1.9 AC and DC Motor Drives Robotics and Servo Controls DS99924D(11/18) © 2018 IXYS CORPORATION, All Rights Reserved **IXFA7N100P IXFP7N100P IXFH7N100P** |**Symbol**<br>**Test Conditions Characteristic Values**<br>|**Symbol**<br>**Test Conditions Characteristic Values**<br>|**Symbol**<br>**Test Conditions Characteristic Values**<br>| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**| |**gfs**<br>VDS= 20V, ID= 0.5**•**ID25, Note 1 3.6|6.0|S| |**RGi**<br>Gate Input Resistance<br>|1.8|| |**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|2590<br>158<br>26|pF<br>pF<br>pF| |**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 10(External)|25<br>49<br>42<br>44|ns<br>ns<br>ns<br>ns| |**Qg(on)**<br> <br>**Qgs**<br>VGS= 10V, VDS= 0.5**•**VDSS, ID= 0.5**•**ID25<br> <br>**Qgd**<br>|47<br>21<br>21|nC<br>nC<br>nC| |**RthJC**<br> <br>**RthCS**<br>TO-220<br> <br>TO-247<br>|<br>0.50<br>0.21|0.42C/W<br> C/W<br> C/W| ## **Source-Drain Diode** |**Symbol**<br>**Test Conditions Characteristic Values**|**Symbol**<br>**Test Conditions Characteristic Values**|**Symbol**<br>**Test Conditions Characteristic Values**| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**| |**IS**<br>VGS= 0V, Note1||7 A| |**ISM**<br>Repetitive, Pulse Width Limited by TJM||28 A| |**VSD**<br>IF= IS, VGS= 0V, Note 1||1.3 V| |**trr**<br> <br>**QRM**<br> <br>**IRM**<br> <br>IF= 3.5A, -di/dt = 100A/μs<br>VR= 100V|<br>0.4<br>4.0|300 ns<br>C<br>A| Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 **IXFA7N100P IXFP7N100P IXFH7N100P** **Fig. 1. Output Characteristics @ TJ = 25[o] C** **==> picture [249 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 7<br>VGS = 10V<br>6 8V<br>7V<br>5<br>4<br>3<br>2 6V<br>1<br>5V<br>0<br>0 2 4 6 8 10 12 14<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 3. Output Characteristics @ TJ = 125[o] C** **==> picture [254 x 396] intentionally omitted <==** **----- Start of picture text -----**<br> 7<br>V GS = 10V<br>6 8V<br>7V<br>5<br>4<br>3 6V<br>2<br>1 5V<br>0<br>0 3 6 9 12 15 18 21 24 27<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 3.5A Value vs.<br> Drain Current<br>2.6<br>2.4 V GS = 10V<br>T J = 125 [o] C<br>2.2<br>2.0<br>1.8<br>1.6<br>1.4<br>1.2<br>TJ = 25 [o] C<br>1.0<br>0.8<br>0 2 4 6 8 10 12 14<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **==> picture [264 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>14<br>V GS = 10V<br>12<br>10 8V<br>8<br>7V<br>6<br>4<br>2 6V<br>0<br>0 5 10 15 20 25 30 35<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 4. RDS(on) Normalized to ID = 3.5A Value vs. Junction Temperature** **==> picture [255 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0<br>2.6 VGS = 10V<br>2.2 I D = 7A<br>1.8<br>I D = 3.5A<br>1.4<br>1.0<br>0.6<br>0.2<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Fig. 6. Maximum Drain Current vs. Case Temperature** **==> picture [251 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> 8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> © 2018 IXYS CORPORATION, All Rights Reserved **IXFA7N100P IXFP7N100P IXFH7N100P** **==> picture [261 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance<br>14<br>12<br>10 TJ = 125 [o] C<br> 25 [o] C<br>8 - 40 [o] C<br>6<br>4<br>2<br>0<br>4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [261 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>30<br>25<br>20<br>15<br>10<br>TJ = 125 [o] C<br>5 TJ = 25 [o] C<br>0<br>0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2<br>VSD - Volts<br> - Amperes<br>IS<br>**----- End of picture text -----**<br> **==> picture [262 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 8. Transconductance<br>14<br>TJ = - 40 [o] C<br>12<br>10 25 [o] C<br>8 125 [o] C<br>6<br>4<br>2<br>0<br>0 2 4 6 8 10 12 14 16<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br> **Fig. 10. Gate Charge** **==> picture [248 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br> VDS = 500V<br>14<br> I D = 3.5A<br>12 I G = 10mA<br>10<br>8<br>6<br>4<br>2<br>0<br>0 10 20 30 40 50 60 70<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br> **Fig. 14. Forward-Bias Safe Operating Area** **Fig. 11. Capacitance** **==> picture [535 x 185] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10,000<br>Ciss<br>RDS(on) Limit<br>10<br>25μs<br>1,000<br>100μs<br>1ms<br>1<br>C oss<br>100<br>0.1<br>Crss TJ = 150 [o] C 10ms<br>100ms<br> TC = 25 [o] C<br>f = 1 MHz Single Pulse DC<br>10 0.01<br>0 5 10 15 20 25 30 35 40 10 100 1,000<br>VDS - Volts VDS - Volts<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. **IXFA7N100P IXFP7N100P IXFH7N100P** **==> picture [538 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 13. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - K / W<br> (th )JC<br>Z<br>**----- End of picture text -----**<br> © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_7N100P(56) 5-28-14-A **IXFA7N100P IXFP7N100P IXFH7N100P** **==> picture [65 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> TO-263 Outline<br>f—8,<br>4<br>| 9<br>of rie<br>ae<br>1 - Gate<br>2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br> **==> picture [155 x 395] intentionally omitted <==** **----- Start of picture text -----**<br> TO-220 Outline<br>: ,<br>[p30 RAL<br>a T<br>Ile.12.3 7M |<br>on |<br>ul<br>L<br>oa pon ee oe]<br>owe<br>1 - Gate<br>2,4 - Drain<br>3 - Source<br>ta<br>TO-247 Outline<br>= - pe<br>— FS |<br>rn<br>il Wy<br>[+f Off |<br>V2 sans oom<br>T<br>H 7<br>bt 1 - Gate2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 29, 2026
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →