IXFA3N120

Power MOSFET, N Channel, 1.2 kV, 3 A, 4.5 ohm, TO-263 (D2PAK), Surface Mount

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Manufacturer: IXYS SEMICONDUCTOR
Product type: Single MOSFETs
SVHC: Lead (21-Jan-2025)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: HiPerFET
Qualification: -
Power Dissipation: 200W
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-263 (D2PAK)
Drain Source Voltage Vds: 1.2kV
Operating Temperature Max: 150°C
Continuous Drain Current Id: 3A
Drain Source On State Resistance: 4.5ohm
Gate Source Threshold Voltage Max: 5V

Delivery and price
Units per pack	250
Price	4.65 €
Current stock	200+
Lead time	30 days

Datasheet

## **HiPerFET[TM] Power MOSFETs** 

## **IXFA 3N120 IXFP 3N120** 

**V =1200 V** DSS **I = 3 A** D25 **R = 4.5 Ω** DS(on) 

N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt 

## **t ≤ 300 ns** rr 

Preliminary Data Sheet 

|||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|**Symbol**|**Test Conditions**|**Maximum Ratings**||**TO-220 (IXFP)**||||||||
|**VDSS**<br>**VDGR**<br>**VGS**<br>**VGSM**|TJ = 25°C to 150°C<br>TJ = 25°C to 150°C; RGS= 1 MΩ<br>Continuous<br>Transient|1200<br>1200<br>±20<br>±30|V<br>V<br>V<br>V|||G|D S<br>D (TAB)<br>~~S~~F|||||
|**ID25**|TC = 25°C|3|A|||||||||
|**IDM**|TC = 25°C, pulse width limited by TJM|12|A|**TO-263 (IXFA)**||||||||
|**IAR**<br>**EAR**<br>**EAS**|TC = 25°C<br>TC = 25°C|3<br>20<br>700|A<br>mJ<br>mJ||||G<br>S<br>D (TAB)<br>@|||||
|**dv/dt**|IS<br>≤IDM, di/dt≤100 A/µs, VDD ≤VDSS,|10<br>V/ns|V/ns|||||||||
||TJ ≤150°C, RG= 4.7Ω|||G = Gate|||D     = Drain||D     = Drain|||
|**PD**|TC = 25°C|200|W|S = Source|||TAB = Drain|||||
|**TJ**||-55 to +150|°C|||||||||
|**TJM**||150|°C|||||||||
|**Tstg**||-55 to +150|°C|||||||||
|**TL**|1.6 mm (0.063 in) from case for 10 s                         300|1.6 mm (0.063 in) from case for 10 s                         300|°C|**Features**||||||||
|**Md**|Mounting torque (TO-220)|1.13/10   Nm/lb.in.|1.13/10   Nm/lb.in.|Low gate charge and capacitances|Low gate charge and capacitances||||Low gate charge and capacitances|||
|**Weight**|TO-220                                                                                  4<br>TO-263                                                                                  2|TO-220                                                                                  4<br>TO-263                                                                                  2|g<br>g|- easier to drive<br>- faster switching<br>International standard packages|||||International standard packages|International standard packages|International standard packages|



- faster switching International standard packages Low R DS (on) Rated for unclamped Inductive load Switching (UIS) Molding epoxies meet UL 94 V-0 flammability classification 

|**min.**|**typ.**|**max.**|
|---|---|---|
|**VDSS**<br>VGS = 0 V, ID= 1 mA<br>1200<br>**VGS(th)**<br>VDS = VGS, ID= 1.5 mA<br>2.5||V<br>5.0<br>V|
|**IGSS**<br>VGS =±20 VDC, VDS= 0||±100<br>nA|
|**IDSS**<br>VDS = VDSS<br>TJ=   25°C<br>VGS = 0 V<br>TJ= 125°C||50<br>µA<br>2<br>mA|
|**RDS(on)**<br>VGS = 10 V, ID= 0.5 ID25<br>Pulse test, t≤300µs, duty cycle d≤2 %||4.5<br>Ω|



## **Advantages** 

Easy to mount Space savings High power density 

© 2004 IXYS All rights reserved 

DS99036B(07/04) 

**IXFA 3N120 IXFP 3N120** 

## **Symbol** 

## **Test Conditions** 

## **Characteristic Values** 

||||(TJ= 25°C, unless|(TJ= 25°C, unless|otherwise specified)|otherwise specified)|otherwise specified)|otherwise specified)|
|---|---|---|---|---|---|---|---|---|
|||||**min.**||**typ.**|**max.**||
|**gfs**|VDS|= 20 V; ID= 0.5 • ID25, pulse test||1.5||2.5||S|
|**Ciss**||||||1050||pF|
|**Coss**||VGS|= 0 V, VDS= 25 V, f = 1 MHz|||100||pF|
|**Crss**||||||25||pF|
|**td(on)**||||||17||ns|
|**tr**||VGS|= 10 V, VDS= 0.5 • VDSS, ID= 0.5 • ID25|||15||ns|
|**td(off)**||RG= 4.7Ω(External),||||32||ns|
|**tf**||||||18||ns|
|**Qg(on)**||||||39||nC|
|**Qgs**||VGS|= 10 V, VDS= 0.5 • VDSS, ID= 0.5 • ID25|||9||nC|
|**Qgd**||||||22||nC|
|**RthJC**|||||||0.62|K/W|
|**RthCK**||(TO-220)||||0.25||K/W|



|**Source-Drain**|**Diode**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|
|---|---|---|---|---|---|---|
||(TJ= 25°C,|unless|otherwise specified)||||
|**Symbol**|**Test Conditions**|**min.**||**typ.**|**max.**||
|**IS**|VGS = 0 V||||3|A|
|**ISM**|Repetitive; pulse width limited by TJM||||12|A|
|**VSD**|IF= IS,  VGS= 0 V,||||1.5|V|
||Pulse test, t≤300µs, duty cycle d≤2 %||||||
|**trr**|||||300|ns|
|**QRM**|IF= IS, -di/dt = 100 A/µs, VR= 100 V|||0.4||µC|
|**IRM**||||1.2||A|



## **TO-220 (IXFP) Outline** 

**==> picture [160 x 341] intentionally omitted <==**

**----- Start of picture text -----**<br>
Pins: 1 - Gate 2 - Drain<br>3 - Source 4 - Drain<br>Bottom Side<br>**----- End of picture text -----**<br>


## **TO-263 (IXFA) Outline** 

1. Gate 2. Drain 3. Source 4. Drain Bottom Side 

|Dim.|Millimeter|Millimeter|Inches|Inches|
|---|---|---|---|---|
||Min.|Max.|Min.|Max.|
|A|4.06|4.83|.160|.190|
|A1|2.03|2.79|.080|.110|
|b|0.51|0.99|.020|.039|
|b2|1.14|1.40|.045|.055|
|c|0.46|0.74|.018|.029|
|c2|1.14|1.40|.045|.055|
|D|8.64|9.65|.340|.380|
|D1|7.11|8.13|.280|.320|
|E|9.65|10.29|.380|.405|
|E1|6.86|8.13|.270|.320|
|e|2.54|BSC|.100|BSC|
|L|14.61|15.88|.575|.625|
|L1|2.29|2.79|.090|.110|
|L2|1.02|1.40|.040|.055|
|L3|1.27|1.78|.050|.070|
|L4|0|0.38|0|.015|
|R|0.46|0.74|.018|.029|



- IXYS reserves the right to change limits, test conditions,  and  dimensions. IXYS MOSFETs  and IGBTs are covered  by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728  B1 6,583,505 6,710,463 

**IXFA 3N120 IXFP 3N120** 

## **Fig. 1. Output Characteristics @ 25 Deg. C** 

**==> picture [209 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
3<br>VG S  = 1 0V<br>            7V<br>2.5<br>6V<br>2<br>1.5<br>1 5V<br>0.5<br>0<br>0 2 4 6 8 10 12<br>V DS - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**==> picture [244 x 212] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 3. Output Characteristics<br>@ 125 Deg. C<br>3<br>VG S  = 1 0V<br>            7V<br>2.5<br>6V<br>2<br>1.5<br>5V<br>1<br>0.5<br>0<br>0 5 10 15 20 25<br>V DS - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 5. RDS(on) Normalized to ID25 Value vs. ID** 

**==> picture [209 x 165] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.8<br>2.5 VG S = 1 0V<br>2.2 TJ = 1 25º C<br>1.9<br>1.6<br>1.3 T J = 25º C<br>1<br>0.7<br>0 1 2 3 4 5 6 7<br>I D - Amperes<br> - Normalized<br>D S (on)<br>R<br>**----- End of picture text -----**<br>


## **Fig. 2. Extended Output Characteristics** 

**@ 25 deg. C** 

**==> picture [208 x 165] intentionally omitted <==**

**----- Start of picture text -----**<br>
7<br>VG S  = 1 0V<br>6<br>7V<br>5<br>4<br>6V<br>3<br>2<br>1 5V<br>0<br>0 5 10 15 20 25 30<br>V DS - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**==> picture [244 x 209] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 4. RDS(on) Normalized to ID25 Value vs.<br>Junction Temperature<br>2.8<br>2.5 V G S  = 1 0V<br>2.2<br>1.9<br>1.6 I  D  = 3A<br>1.3<br>I D = 1 .5A<br>1<br>0.7<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Normalized<br>D S (on)<br>R<br>**----- End of picture text -----**<br>


**Fig. 6. Drain Current vs. Case Temperature** 

**==> picture [213 x 165] intentionally omitted <==**

**----- Start of picture text -----**<br>
3.5<br>3<br>2.5<br>2<br>1.5<br>1<br>0.5<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


© 2004 IXYS All rights reserved 

DS99036B(07/04) 

**IXFA 3N120 IXFP 3N120** 

**Fig. 7. Input Admittance** 

**==> picture [216 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
6<br>5<br>4<br>3<br>2  TJ = 1 20º C<br>           25º C<br>1          -40º C<br>0<br>3.5 4 4.5 5 5.5 6 6.5<br>V GS - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 9. Source Current vs. Source-To-Drain Voltage** 

**==> picture [216 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
9<br>8<br>7<br>6<br>5<br>4<br>3 TJ = 1 25º C<br>2<br>1 º<br>T J = 25 C<br>0<br>0.4 0.5 0.6 0.7 0.8 0.9<br>VSD - Volts<br> - Amperes<br>S<br>I<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

**==> picture [220 x 165] intentionally omitted <==**

**----- Start of picture text -----**<br>
10000<br>f = 1 M Hz<br>C iss<br>1000<br>C oss<br>100<br>Crss<br>10<br>0 5 10 15 20 25 30 35 40<br>V DS - Volts<br>Capacitance - pF<br>**----- End of picture text -----**<br>


## **Fig. 8. Transconductance** 

**==> picture [210 x 166] intentionally omitted <==**

**----- Start of picture text -----**<br>
8<br>7<br>6 TJ = -40 º C<br>         25º C<br>5       1 25º C<br>4<br>3<br>2<br>1<br>0<br>0 1.5 3 4.5 6 7.5 9<br>I D - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br>


**Fig. 10. Gate Charge** 

**==> picture [212 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>VD S  = 600V<br>8 I D = 1 .5A<br>I G = 1 0mA<br>6<br>4<br>2<br>0<br>0 8 16 24 32 40 48<br>Q G - nanoCoulombs<br> - Volts<br>G S<br>V<br>**----- End of picture text -----**<br>


**Fig. 12. Maximum Transient Thermal Resistance** 

**==> picture [219 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.7<br>0.6<br>0.5<br>0.4<br>0.3<br>0.2<br>0.1<br>0<br>1 10 100 1000<br>Pulse Width - milliseconds<br>(ºC/W)<br> -<br>(th) J C<br>R<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, test conditions,  and  dimensions. 

**==> picture [157 x 46] intentionally omitted <==**

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Updated at April 29, 2026

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