ISL9R860P2

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November 2013<br>**----- End of picture text -----**<br>


**ISL9R860P2, ISL9R860S3ST 8 A, 600 V, STEALTH™ Diode** 

## **Features** 

- Stealth Recovery trr = 28 ns (@ IF = 8 A) 

- Max Forward Voltage, VF = 2.4 V (@ TC = 25°C) 

- 600 V Reverse Voltage and High Reliability 

- Avalanche Energy Rated 

- RoHS Compliant 

## **Applications** 

- S MPS FWD 

- Hard Switched PFC Boost Diode 

- UPS Free Wheeling Diode 

## **Description** 

The ISL9R860P2, ISL9R860S3ST is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRR and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. 

- Motor Drive FWD 

- Snubber Diode 

## **Package** 

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Package Symbol<br>JEDEC TO-220AC -2L JEDEC TO-263AB(D [2] -PAK)<br>K<br>ANODE CATHODE<br>CATHODE CATHODE (FLANGE)<br>(FLANGE)<br>N/C<br>A<br>ANODE<br>**----- End of picture text -----**<br>


## **Device Maximum Ratings TC= 25°C unless otherwise noted** 

|**Device Maximum Ratings TC= 25°C unless otherwise notedC= 25°C unless otherwise noted= 25°C unless otherwise noted**||
|---|---|
|Parameter|Ratings|
|Peak Repetitive Reverse Voltage|600|
|WorkingPeak Reverse Voltage|600|
|DC BlockingVoltage|600|
|Average Rectified Forward Current(TC= 147oC)|8|
|Repetitive Peak Surge Current(20kHz Square Wave)|16|
|Nonrepetitive Peak Surge Current(Halfwave 1 Phase 60Hz)|100|
|Power Dissipation|85|
|Avalanche Energy (1 A, 40 mH)|20|
|Operatingand Storage Temperature Range|-55 to 175|
|Maximum Temperature for Soldering<br>Leads at 0.063in (1.6mm) from Case for 10s<br>Package Body for 10s, See Techbrief TB334|300<br>260|



www.fairchildsemi.com 

©2001 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S3ST Rev. C1 

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## **Package Marking and Ordering Information** 

|**Package Marking and Ordering Information**|**Package Marking and Ordering Information**|**Package Marking and Ordering Information**|**Package Marking and Ordering Information**|**Package Marking and Ordering Information**|**Package Marking and Ordering Information**|**Package Marking and Ordering Information**|
|---|---|---|---|---|---|---|
|**Part Number **|**Top Mark**<br>~~ee~~|**Package**<br>~~ee~~|**Packing Method**<br>~~ee~~|**Reel Size **<br>~~ee~~|**Tape Width **<br>~~ee~~|**Quantity**|
|ISL9R860P2|ISL9R860P2<br>~~ee~~|TO-220AC-2L<br>~~ee~~|Tube<br>~~ee~~|N/A<br>~~ee~~|N/A<br>~~ee~~|50|
|ISL9R860S3ST|ISL9R860S3ST <br>~~ee~~|TO-263AB(D2-PAK)<br>~~ee~~|-PAK)<br>Reel<br>~~ee~~|13" Dia<br>~~ee~~|24mm<br>~~ee~~|800|
|**Electrical CharacteristicsTC = 25°C unless otherwise noted**<br>**Off State Characteristics**<br>**On State Characteristics**<br>**Dynamic Characteristics**<br>**Switching Characteristics**<br>**Thermal Characteristics**<br>Symbol<br>Parameter<br>Test Conditions<br>Min<br>Typ<br>Max<br>Unit<br>IR<br>Instantaneous Reverse Current<br>VR= 600 V<br>TC= 25°C<br>-<br>-<br>100<br>µA<br>TC= 125°C<br>-<br>-<br>1.0<br>mA<br>VF<br>Instantaneous Forward Voltage<br>IF = 8 A<br>TC= 25°C<br>-<br>2.0<br>2.4<br>V<br>TC= 125°C<br>-<br>1.6<br>2.0<br>V<br>CJ<br>Junction Capacitance<br>VR = 10 V, IF= 0 A<br>-<br>30<br>-<br>pF<br>trr<br>Reverse Recovery Time<br>IF= 1 A, diF/dt = 100 A/µs, VR= 30 V<br>-<br>18<br>25<br>ns<br>IF= 8 A, diF/dt = 100 A/µs, VR= 30 V<br>-<br>21<br>30<br>ns<br>trr<br>Reverse Recovery Time<br>IF= 8 A,<br>diF/dt = 200 A/µs,<br>VR= 390 V, TC= 25°C<br>-<br>28<br>-<br>ns<br>Irr<br>Reverse Recovery Current<br>-<br>3.2<br>-<br>A<br>Qrr<br>Reverse Recovery Charge<br>-<br>50<br>-<br>nC<br>trr<br>Reverse Recovery Time<br>IF= 8 A,<br>diF/dt = 200 A/µs,<br>VR= 390 V,<br>TC= 125°C<br>-<br>77<br>-<br>ns<br>S<br>Softness Factor (tb/ta)<br>-<br>3.7<br>-<br>Irr<br>Reverse Recovery Current<br>-<br>3.4<br>-<br>A<br>Qrr<br>Reverse Recovery Charge<br>-<br>150<br>-<br>nC<br>trr<br>Reverse Recovery Time<br>IF= 8 A,<br>diF/dt = 600 A/µs,<br>VR= 390 V,<br>TC= 125°C<br>-<br>53<br>-<br>ns<br>S<br>Softness Factor (tb/ta)<br>-<br>2.5<br>-<br>Irr<br>Reverse Recovery Current<br>-<br>6.5<br>-<br>A<br>Qrr<br>Reverse Recovery Charge<br>195<br>-<br>nC<br>dIM/dt<br>Maximum di/dt during tb<br>-<br>500<br>-<br>A/µs<br>RθJC<br>Thermal Resistance Junction to Case<br>-<br>-<br>1.75<br>°C/W<br>RθJA<br>Thermal Resistance Junction to Ambient TO-220<br>-<br>-<br>62<br>°C/W<br>RθJA<br>Thermal Resistance Junction to Ambient TO-263<br>62<br>°C/W<br>~~a a~~<br>~~ee~~<br>~~**e**e~~<br>~~e~~<br>~~hE~~<br>~~LUE~~<br>~~_————~~<br>~~=~~<br>~~——~~<br>~~—————~~|||||||



©2001 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S3ST Rev. C1 

www.fairchildsemi.com 

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Typical Performance Curves<br>**----- End of picture text -----**<br>


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16<br>100<br>175 [o] C<br>14 175 [o] C<br>12 HA 150 [o] C === 150 [o] C<br>25 [o] C<br>10 nae 125 [o] C Leff. | 10 ———<br>125 [o] C<br>8<br>100 [o] C<br>6 100 [o] C<br>1<br>4<br>25 [o] C<br>2<br>0 a> y/, ~4000nn A, | 0.1 ——T_|_———  ff_—————<br>0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 100 200 300 400 500 600<br>VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>Figure 1. Forward Current vs Forward Voltage Figure 2. Reverse Current vs Reverse Voltage<br>80 90<br>VR = 390V, TJ = 125°C VR = 390V, TJ = 125°C<br>70 a ae 80 a ee ee<br>tb AT d i F/dt  = 200A/µs, 500A/µs, 800A/µs 70 tb AT IF = 16A, 8A, 4A<br>60<br>7 SR ee<br>60<br>50 | i|A | | 7 NEOAWN +<br>50<br>40<br>Joo 40 PARAAEKE<br>30<br>30<br>20 weWg —T | | | NK So —|7<br>20<br>10<br>SSS ___—_— 10 | YE<br>ta AT d i F/dt = 200A/µs, 500A/µs, 800A/µs ta AT IF = 16A, 8A, 4A<br>0 SSS 0 ==>SS<br>0 2 4 6 8 10 12 14 16 100 200 300 400 500 600 700 800 900 1000<br>IF, FORWARD CURRENT (A) d i F/dt, CURRENT RATE OF CHANGE (A/µs)<br>Figure 3. ta and tb Curves vs Forward Current Figure 4. ta and tb Curves vs d i F/dt<br>14<br>11<br>VR = 390V, TJ = 125°C d i F/dt = 800A/µs VR = 390V, TJ = 125°C<br>10 ee 12 Pf EEE<br>9<br>ee ae 10 rT tT IF = 16A yA<br>8<br>7 Freee d i F/dt = 500A/µs 8 Cor IF = 8A ger<br>ree aa<br>6 = 6 | I F  = 4A<br>5 reT ILLES eT| eer |<br>d i F/dt = 200A/µs 4<br>4<br>Eeea ee CO 2 RTVA  TT<br>32 es 0 Pt ttEELLL<br>0 2 4 6 8 10 12 14 16 100 200 300 400 500 600 700 800 900 1000<br>IF, FORWARD CURRENT (A) d i F/dt, CURRENT RATE OF CHANGE (A/µs)<br>Figure 5. Maximum Reverse Recovery Current Figure 6. Maximum Reverse Recovery Current<br> vs Forward Current vs d i F/dt<br>, FORWARD CURRENT (A)IF , REVERSE CURRENT (µA) IR<br>t, RECOVERY TIMES (ns)<br>t, RECOVERY TIMES (ns)<br>, MAX REVERSE RECOVERY CURRENT (A)I rr , MAX REVERSE RECOVERY CURRENT (A)I rr<br>**----- End of picture text -----**<br>


©2001 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S3ST Rev. C1 

www.fairchildsemi.com 

**3** 

## **Typical Performance Curves** (Continued) 

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6 350<br>VR = 390V, TJ = 125°C VR = 390V, TJ = 125°C<br>300<br>5 Pe ttt TT) Uy IF = 16A Le<br>250<br>4 NOT IF = 16A Hee<br>IF = 8A 200 I F  = 8A<br>3 SS Seen e_ageeeee<br>~Sw 150 Ta<br>2 Ree IF = 4A eee IF = 4A<br>100<br>1 SILI SSPRS 50 eerPCETT<br>100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000<br>d i F/dt, CURRENT RATE OF CHANGE (A/µs) d i F/dt, CURRENT RATE OF CHANGE (A/µs)<br>Figure 7. Reverse Recovery Softness Factor vs d i F/dt/dt Figure 8. Reverse Recovery Charge vs d i F/dt<br>1200<br>1000 a ae 10<br>8<br>800<br>HN 6<br>600<br>a 4<br>400<br>MELEATE EU<br>2<br>200<br>MELINA<br>0<br>140 145 150 155 160 165 170 175<br>0<br>WEL 0.1 [UTE] 1 [SST] 10 LUT 100<br>TC, CASE TEMPERATURE  ( [o] C)<br>VR, REVERSE VOLTAGE (V)<br>Figure 9. Junction Capacitance vs Reverse Voltage Figure 10. DC Current Derating Curve<br>DUTY CYCLE - DESCENDING ORDER<br>0.5<br>1.0 0.2<br>0.1<br>0.05<br>0.02<br>0.01<br>P DM<br>Pe<br>0.1<br>t 1<br>t2<br>NOTES:<br>DUTY FACTOR: D = t1/t2<br>EY SINGLE PULSE el l<br>PEAK TJ = PDM x ZθJA x RθJA + TA<br>0.01 7% CTE CL |<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1]<br>t, RECTANGULAR PULSE DURATION (s)<br>, REVERSE RECOVERY CHARGE (nC)<br>RR<br>Q<br>S, REVERSE RECOVERY SOFTNESS FACTOR<br>, JUNCTION CAPACITANCE (pF)J<br>C , AVERAGE FORWARD CURRENT  (A)<br>IF(AV)<br>, NORMALIZED<br>ZJAθ<br>THERMAL IMPEDANCE<br>**----- End of picture text -----**<br>


Figure 7. Reverse Recovery Softness Factor vs d i F/dt/dt 

Figure 11.  Normalized Maximum Transient Thermal Impedance 

www.fairchildsemi.com 

©2001 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S3ST Rev. C1 

**4** 

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Test Circuits and Waveforms<br>**----- End of picture text -----**<br>


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VGE AMPLITUDE AND<br>RAND tG CONTROL d2 CONTROL I i F/dtF t1 L DUT CURRENT IF ddt i F ta t rr tb<br>RG SENSE 0<br>+<br>VGE t1 MOSFET - VDD 0.25 IIRM RM<br>nn! | XS<br>t2<br>Figure 12.  trr Test Circuit Figure 13. trr Waveforms and Definitions<br>I = 1A<br>L = 40mH<br>R < 0.1Ω<br>VDD = 50V<br>EAVL = 1/2LI [2]  [VR(AVL)/(VR(AVL) - VDD)]<br>Q1 = IGBT (BVCES > DUT VR(AVL)) L R VAVL<br>CURRENT +<br>SENSE IL IL<br>JL e Q1 t DUT -VDD I V a .<br>t0 t1 t2 t<br>Figure 14.  Avalanche Energy Test Circuit Figure 15. Avalanche Current and Voltage<br>Waveforms<br>**----- End of picture text -----**<br>


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©2001 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com<br>ISL9R860P2, ISL9R860S3ST Rev. C1<br>**----- End of picture text -----**<br>


## **Mechanical Dimensions** 

## **Figure 16.  TO-220 2L - 2LD,TO220,JEDEC TO-220 VARIATION AC** 

_Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products._ 

_Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-0B2._ 

©2001 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S3ST Rev. C1 

www.fairchildsemi.com 

**6** 

BE 4 7100 _ i037 ——~= —___L «a -—— 12.70Ii —| | te 1 24 8,38 | | 10.00 | J ___|\ __| 1,78 MAX (6.40) | | ral fil | | i. | 11 ~~ 3.80 | 3 _t | HJ 18178 —| |— 1,05 0,99 J 5.08 —| 0.51 LAND PATTERN RECOMMENDATION [B[o25 @ le [Aw] UNLESS NOTED, ALL DIMS TYPICAL 4,83 4/08 }—=— 6,22 MIN —= 1.85 114 a_ 

## **Package Dimensions** 

## **Figure 17. TO-263 2L (D2PAK) - 2LD,TO263, SURFACE MOUNT** 

_Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products._ 

_Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002._ 

©2001 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S3ST Rev. C1 

www.fairchildsemi.com 

**7** 

## **TRADEMARKS** 

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 

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|---|---|---|---|---|---|---|
|AccuPower™|F-PFS™|Sync-Lock™|
|AX-CAP|[®]|*|FRFET|[®]|®|®*|
|BitSiC™|Global Power Resource|[SM]|PowerTrench|[®]|
|E|GENERALSYSTEM|
|Build it Now™|GreenBridge™|PowerXS™|
|CorePLUS™|Green FPS™|Programmable Active Droop™|TinyBoost|[®]|
|CorePOWER™|Green FPS™ e-Series™|QFET|[®]|TinyBuck|[®]|
|CROSSVOLT|™|G|max|™|QS™|TinyCalc™|
|CTL™|GTO™|Quiet Series™|TinyLogic|[®]|
|TINYOPTO™|
|Current Transfer Logic™|IntelliMAX™|RapidConfigure™|
|DEUXPEED|[®]|ISOPLANAR™|™|TinyPower™|
|Dual Cool™|Marking Small Speakers Sound Louder|TinyPWM™|
|EcoSPARK|[®]|and Better™|Saving our world, 1mW/W/kW at a time™|TinyWire™TranSiC™|
|EfficentMax™|MegaBuck™|SignalWise™|TriFault Detect™|
|ESBC™|MICROCOUPLER™|SmartMax™|TRUECURRENT|[®]|*|
|®|MicroFET™MicroPak™|SMART START™Solutions for Your Success™|SerDes™|
|Fairchild|[®]|MicroPak2™|SPM|[®]|
|Fairchild Semiconductor|[®]|MillerDrive™|STEALTH™|174...|
|FACT Quiet Series™|MotionMax™|SuperFET|[®]|UHC|[®]|
|FACT|[®]|mWSaver|[®]|SuperSOT™-3|Ultra FRFET™|
|FAST|[®]|OptoHiT™|SuperSOT™-6|UniFET™|
|FastvCore™|OPTOLOGIC|[®]|SuperSOT™-8|VCX™|
|FETBench™|OPTOPLANAR|[®]|SupreMOS|[®]|VisualMax™|
|FPS™|SyncFET™|VoltagePlus™|
|XS™|

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*Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. 

As used here in: 

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A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 

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Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. 

## **PRODUCT STATUS DEFINITIONS Definition of Terms** 

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||||
|---|---|---|
|Datasheet Identification|Product Status|Definition|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications|
|may change in any manner without notice.|
|Datasheet contains preliminary data; supplementary data will be published at a later|
|Preliminary|First Production|date. Fairchild Semiconductor reserves the right to make changes at any time without|
|notice to improve design.|
|No Identification Needed|Full Production|Datasheet contains final specifications. Fairchild Semiconductor reserves the right to|
|make changes at any time without notice to improve the design.|
|Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild|
|Semiconductor. The datasheet is for reference information only.|

**----- End of picture text -----**<br>


Rev. I66 

©2001 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S3ST Rev. C1 

www.fairchildsemi.com 

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