ISL9R460PF2
Fast / Ultrafast Diode, 600 V, 4 A, Single, 2.4 V, 22 ns, 50 A
- Manufacturer: ONSEMI
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- No. of Pins: 2 Pin
- Product Range: ISL9R
- Diode Case Style: TO-220F
- Diode Configuration: Single
- Forward Voltage Max: 2.4V
- Forward Surge Current: 50A
- Reverse Recovery Time: 22ns
- Average Forward Current: 4A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 600V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 1.01 € |
| Current stock | 10+ |
| Lead time | 30 days |
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ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. **==> picture [75 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> November 2014<br>**----- End of picture text -----**<br> ## **ISL9R460PF2 4 A, 600 V, STEALTH[TM] Diode** ## **Features** - Stealth Recovery trr = 17 ns (@ IF = 4 A) - Max Forward Voltage, VF = 2.4 V (@ TC = 25°C) - 600 V Reverse Voltage and High Reliability - Avalanche Energy Rated - RoHS Compliant ## **Applications** - S MPS - Hard Switched PFC Boost Diode ## **Description** The ISL9R460PF2 is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (Irr) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low Irr and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. - UPS Free Wheeling Diode - Motor Drive FWD - SMPS FWD - Snubber Diode ## **Package** **==> picture [101 x 88] intentionally omitted <==** **----- Start of picture text -----**<br> TO-220F-2L<br>CATHODE ANODE<br>**----- End of picture text -----**<br> **==> picture [51 x 106] intentionally omitted <==** **----- Start of picture text -----**<br> Symbol<br>, K<br>A<br>**----- End of picture text -----**<br> ## **Device Maximum Ratings** TC= 25°C unless otherwise noted |**Device Maximum Ratings **TC= 25°C unless otherwise notedC= 25°C unless otherwise noted= 25°C unless otherwise noted|| |---|---| |**Parameter**|**Ratings**| |Peak Repetitive Reverse Voltage|600| |Working Peak Reverse Voltage|600| |DC Blocking Voltage|600| |Average Rectified Forward Current (TC= 108°C)|4| |Repetitive Peak Surge Current (20kHz Square Wave)|8| |Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)|50| |Power Dissipation|22| |Avalanche Energy (0.5 A, 80 mH)|10| |Operating and Storage Temperature Range|-55 to 175| |Maximum Temperature for Soldering<br>Leads at 0.063in (1.6mm) from Case for 10s<br>Package Bodyfor 10s, See Techbrief TB334|300<br>260| CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. ©2003 Fairchild Semiconductor Corporation ISL9R460PF2 Rev. C2 www.fairchildsemi.com **1** |**Package Marking and Ordering Information**<br>~~——————~~|**Package Marking and Ordering Information**<br>~~——————~~|**Package Marking and Ordering Information**<br>~~——————~~|**Package Marking and Ordering Information**<br>~~——————~~|**Package Marking and Ordering Information**<br>~~——————~~|**Package Marking and Ordering Information**<br>~~——————~~|**Package Marking and Ordering Information**<br>~~——————~~| |---|---|---|---|---|---|---| |**Part Number**<br>~~——————~~|**Top Mark**<br>~~——————~~|**Package**<br>~~——————~~|**Packing Method**<br>~~——————~~|**Reel Size**<br>~~——————~~|**Tape Width**<br>~~——————~~|**Quantity**<br>50<br>~~——————~~| |ISL9R460PF2<br>~~——————~~|ISL9R460PF2<br>~~——————~~|TO-220F-2L<br>~~——————~~|Tube<br>~~——————~~|N/A<br>~~——————~~|N/A<br>~~——————~~|| |**Electrical Characteristics**TC= 25°C unless otherwise noted<br>**Off State Characteristics**<br>**On State Characteristics**<br>**Dynamic Characteristics**<br>**Switching Characteristics**<br>**Thermal Characteristics**<br>**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**<br>IR<br>Instantaneous Reverse Current<br>VR= 600 V<br>TC= 25°C<br>-<br>-<br>100<br>µA<br>TC= 125°C<br>-<br>-<br>1.0<br>mA<br>VF<br>Instantaneous Forward Voltage<br>IF= 4 A<br>TC= 25°C<br>-<br>2.0<br>2.4<br>V<br>TC= 125°C<br>-<br>1.6<br>2.0<br>V<br>CJ<br>Junction Capacitance<br>VR= 10 V, IF= 0 A<br>-<br>19<br>-<br>pF<br>trr<br>Reverse Recovery Time<br>IF= 1 A, diF/dt = 100 A/µs, VR= 30 V<br>-<br>17<br>20<br>ns<br>IF= 4 A, dIF/dt = 100 A/µs, VR= 30 V<br>-<br>19<br>22<br>ns<br>trr<br>Reverse RecoveryTime<br>IF= 4 A,<br>diF/dt = 200 A/µs,<br>VR= 390 V, TC= 25°C<br>-<br>17<br>-<br>ns<br>Irr<br>Reverse RecoveryCurrent<br>-<br>2.6<br>-<br>A<br>Qrr<br>Reverse Recovered Charge<br>-<br>22<br>-<br>nC<br>trr<br>Reverse RecoveryTime<br>IF= 4 A,<br>diF/dt = 200 A/µs,<br>VR= 390 V,<br>TC= 125°C<br>-<br>77<br>-<br>ns<br>S<br>Softness Factor(tb/ta)<br>-<br>4.2<br>-<br>Irr<br>Reverse RecoveryCurrent<br>-<br>2.8<br>-<br>A<br>Qrr<br>Reverse Recovered Charge<br>-<br>100<br>-<br>nC<br>trr<br>Reverse RecoveryTime<br>IF= 4 A,<br>diF/dt = 400 A/µs,<br>VR= 390 V,<br>TC= 125°C<br>-<br>54<br>-<br>ns<br>S<br>Softness Factor(tb/ta)<br>-<br>3.5<br>-<br>Irr<br>Reverse RecoveryCurrent<br>-<br>4.3<br>-<br>A<br>Qrr<br>Reverse Recovered Charge<br>110<br>-<br>nC<br>dIM/dt<br>Maximum di/dt duringtb<br>-<br>500<br>-<br>A/µs<br>RθJC<br>Thermal Resistance Junction to Case<br>-<br>-<br>5.7<br>°C/W<br>RθJA<br>Thermal Resistance Junction to Ambient TO-220F<br>-<br>-<br>70<br>°C/W<br>~~——————~~<br>~~a~~<br>~~a~~<br>~~ee~~<br>~~aee~~<br>~~ee ee~~<br>~~— >~~<br>~~Ol~~<br>~~whUO!~~<br>~~C—O~~<br>~~i. FS~~<br>~~——~~<br>~~===~~<br>~~—~~<br>~~Fe~~<br>~~|~~<br>~~| ——— } } } }—~~||||||| ©2003 Fairchild Semiconductor Corporation ISL9R460PF2 Rev. C2 www.fairchildsemi.com **2** **==> picture [286 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> Typical Performance Curves TC = 25°C unless otherwise noted<br>**----- End of picture text -----**<br> **==> picture [443 x 579] intentionally omitted <==** **----- Start of picture text -----**<br> 8 600<br>7 ee<br>150 [o] C 25 [o] C 100 150 [o] C<br>6<br>PE ee<br>125 [o] C<br>5<br>| | | Ys ——<br>4 n/a 10 100 [o] C<br>100 [o] C<br>3 2 75 [o] C<br>//) ee a ———<br>2 1<br>LYASE<br>1 [jy 25 [o] C<br>0 lA | | |i| 0.1 oF== SS<br>0 0.5 1 1.5 2 2.5 3 100 200 300 400 500 600<br>VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>Figure 1. Forward Current vs Forward Voltage Figure 2. Reverse Current vs Reverse Voltage<br>90 120<br>VR = 390V, TJ = 125 [o] C VR = 390V, TJ = 125 [o] C<br>80<br>tb AT d i F/dt = 200A/µs, 500A/µs, 800A/µs 100<br>70 ——tttite wi tit<br>tb AT IF = 8A, 4A, 2A<br>60 80<br>Tet \<br>50<br>ae ot C iLN aan<br>60<br>40 pa ONT<br>| |e SNK<br>30 40<br>Toe Se CO NGSKN<br>20<br>ta AT IF = 8A, 4A, 2A<br>eee 20 ee ee<br>10 aeSSSeee =ee<br>ta AT d i F/dt = 200A/µs, 500A/µs, 800A/µs<br>0 1 a 2 3 4 5 6 7 8 0100 EEE 200 300 400 500 600 700 800 900 1000<br>IF, FORWARD CURRENT (A) d i F/dt, CURRENT RATE OF CHANGE (A/ µs )<br>Figure 3. ta and tb Curves vs Forward Current Figure 4. ta and tb Curves vs d i F/dt<br>8 8<br>VR = 390V, TJ = 125 [o] C VR = 390V, TJ = 125 [o] C<br>7<br>7 d i F/dt = 800A/µs IF = 8A<br>yp 6 a a<br>6 Paseeee eee IF = 4A 248<br>IF = 2A<br>5<br>5 TTT Ee CoA<br>= d i F/dt = 500A/µs 4 BE Zanaee<br>4 a Jj<br>3<br>Ai<br>3 2<br>TPT AP<br>PT d i F/dt = 200A/µs ii it<br>2 1<br>1 a 2 3 4 5 6 7 8 100 4gR 200 300 400 00202000 500 600 700 800 900 1000<br>IF, FORWARD CURRENT (A) d i F/dt, CURRENT RATE OF CHANGE (A/ µ s)<br>Figure 5. Maximum Reverse Recovery Current vs Figure 6. Maximum Reverse Recovery Current vs<br>Forward Current d i F/dt<br>A)<br>µ<br>, FORWARD CURRENT (A)IF , REVERSE CURRENT ( IR<br>t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns)<br>, MAX REVERSE RECOVERY CURRENT (A) , MAX REVERSE RECOVERY CURRENT (A)<br>Irr Irr<br>**----- End of picture text -----**<br> ©2003 Fairchild Semiconductor Corporation ISL9R460PF2 Rev. C2 www.fairchildsemi.com **3** ## **Typical Performance Curves** TC = 25°C unless otherwise noted **==> picture [440 x 566] intentionally omitted <==** **----- Start of picture text -----**<br> 6 180<br>NX VR = 390V, TJ = 125 [o] C VR = 390V, TJ = 125 [o] C fl IF = 8A<br>160<br>5<br>SSH, 140 ope ESE<br>4 N UNN IF = 4A S IF = 8A E LEE IF = 4A<br>120<br>3 SSNCBSNOS ULLE +<br>100<br>IF = 2A IF = 2A<br>2 CTPSSSAEO PEETe<br>80<br>1 PLLEL LPR 60 RRP<br>100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000<br>diF/dt, CURRENT RATE OF CHANGE (A/µs) diF/dt, CURRENT RATE OF CHANGE (A/ µ s)<br>Figure 8. Reverse Recovery Charge<br>Figure 7. Reverse Recovery Softness<br>vs diF/dt vs diF/dt<br>1800 5<br>1600<br>1400 A000 FETE ON 4 Ty<br>SNC ] | df tid<br>1200<br>TET ATTA FEF 3 PON]<br>1000<br>B00 SS<br>800<br>rT NINE CCIE 2 Pf |Ny<br>600<br>400 OS01000 1 TT FT [NO\<br>200<br>0 B10TUNIESE 0 Ty Py IN<br>0.03 0.1 1.0 10 100 100 110 120 130 140 150<br>VR , REVERSE VOLTAGE (V) TC, CASE TEMPERATURE ( [O] C)<br>Figure 9. Junction Capacitance vs Reverse Voltage Figure 10. DC Current Derating Curve<br>2<br>DUTY CYCLE - DESCENDING ORDER<br>1 0.5<br>0.2<br>0.1<br>0.05<br>0.02<br>0.01 SS ee es _e PDM<br>SSee<br>0.1<br>messcl<br>t 1<br>t 2<br>| NOTES:<br>LTA LI oT TTETT DUTY FACTOR: D = t 1 /t 2<br>SINGLE PULSE PEAK TJ = PDM x Z θ JC x R θ JC + TC<br>0.01 7 A 1 LUEEE<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1]<br>t, RECTANGULAR PULSE DURATION (s)<br>, REVERSE RECOVERY CHARGE (nC)<br>RR<br>Q<br>S, REVERSE RECOVERY SOFTNESS FACTOR<br>, JUNCTION CAPACITANCE (pF)CJ , AVERAGE FORWARD CURRENT (A)IF(AV)<br>, NORMALIZED<br>ZJC θ<br>THERMAL IMPEDANCE<br>**----- End of picture text -----**<br> **Figure 11. Normalized Maximum Transient Thermal Impedance** ©2003 Fairchild Semiconductor Corporation ISL9R460PF2 Rev. C2 www.fairchildsemi.com **4** ## **Test Circuit and Waveforms** **==> picture [416 x 303] intentionally omitted <==** **----- Start of picture text -----**<br> VGE AMPLITUDE AND<br>RG CONTROL d i F/dt L<br>t1 AND t2 CONTROL IF DUT CURRENT IF ddt i F ta trr tb<br>RG SENSE 0<br>+<br>bo Ty<br>VGE t1 MOSFET - VDD I0.25 IRM RM<br>t2<br>Figure 12. Itrr Test Circuit Figure 13. trr Waveforms and Definitions<br>I = 0.5A<br>L = 80mH<br>R < 0.1Ω<br>VDD = 200V<br>EAVL = 1/2LI [2] [VR(AVL) /(VR(AVL) - VDD)]<br>Q1 = IGBT (BVCES > DUT VR(AVL)) L R VAVL<br>CURRENT +<br>SENSE VDD IL IL<br>Q1 I V<br>VDD<br>JL et DUT - 7a ‘.<br>t0 t1 t2 t<br>**----- End of picture text -----**<br> **Figure 14. Avalanche Energy Test Circuit** **==> picture [184 x 18] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 15. Avalanche Current and Voltage<br>Waveforms<br>**----- End of picture text -----**<br> ©2003 Fairchild Semiconductor Corporation ISL9R460PF2 Rev. C2 www.fairchildsemi.com **5** ## **Mechanical Dimensions** ## **Figure 16. TO-220F 2L - 2LD; TO220; MOLDED; FULL PACK** _Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products._ _Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-002._ ©2003 Fairchild Semiconductor Corporation ISL9R460PF2 Rev. 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Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. ## **PRODUCT STATUS DEFINITIONS** **Definition of Terms** |**Definition of Terms**||| |---|---|---| |**Datasheet Identification**|**Product Status**|**Definition**| |Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications<br>may change in any manner without notice.| |Preliminary|First Production|Datasheet contains preliminary data; supplementary data will be published at a later<br>date. Fairchild Semiconductor reserves the right to make changes at any time without<br>notice to improve design.| |No Identification Needed|Full Production|Datasheet contains final specifications. Fairchild Semiconductor reserves the right to<br>make changes at any time without notice to improve the design.| |Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild<br>Semiconductor. The datasheet is for reference information only.| Rev. I71 **5** ©2003 Fairchild Semiconductor Corporation ISL9R460PF2 Rev. C2 www.fairchildsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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