ISL9R3060G2

## STEALTH Diode 30 A, 600 V 

## ISL9R3060G2, ISL9R3060P2 

## **Description** 

The ISL9R3060G2, ISL9R3060P2 is a STEALTH diode optimized for low loss performance in high frequency hard switched applications. The STEALTH family exhibits low reverse recovery current (Irr) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low Irr and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. 

## **Features** 

- Stealth Recovery, trr = 36 ns (@ IF = 30 A) 

- Max Forward Voltage, VF = 2.4 V (@ TC = 25°C) 

- 600 V Reverse Voltage and High Reliability 

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www.onsemi.com<br>JEDEC STYLE<br>ANODE<br>2 LEAD TO−247−2L<br>CATHODE<br>CATHODE<br>(BOTTOM +<br>SIDE METAL)<br>JEDEC<br>TO−220AC−2L CATHODE<br>(FLANGE)<br>»<br>CATHODE<br>ANODE<br>**----- End of picture text -----**<br>


- Avalanche Energy Rated 

- This Device is Pb−Free and is RoHS Compliant 

## **MARKING DIAGRAM** 

## **Applications** 

- SMPS 

- Hard Switched PFC Boost Diode 

- UPS Free Wheeling Diode 

- Motor Drive FWD 

- SMPS FWD 

- Snubber Diode 

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$Y&Z&3&K<br>R3060X2<br>$Y = ON Semiconductor Logo<br>&Z = Assembly Plant Code<br>&3 = Numeric Date Code<br>&K = Lot Code<br>R3060X2 = Specific Device Code<br>X =G/P<br>**----- End of picture text -----**<br>


K 

A 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 2 of this data sheet. 

Publication Order Number: **ISL9R3060P2/D** 

**1** 

© Semiconductor Components Industries, LLC, 2001 **March, 2020 − Rev. 5** 

## **ISL9R3060G2, ISL9R3060P2** 

## **DEVICE MAXIMUM RATINGS** (TC = 25 ° C unless otherwise noted) 

|**DEVICE MAXIMUM RATINGS**(TC= 25°C unless otherwise noted)||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage|VRRM|600|V|
|Working Peak Reverse Voltage|VRWM|600|V|
|DC Blocking Voltage|VR|600|V|
|Average Rectified Forward Current|IF(AV)|30|A|
|Repetitive Peak Surge Current (20 kHz Square Wave )|IFRM|70|A|
|Nonrepetitive Peak Surge Current (Halfwave, 1 Phase, 60 Hz)|IFSM|325|A|
|Power Dissipation|PD|200|W|
|Avalanche Energy (1 A, 40 mH)|EAVL|20|mJ|
|Operating and Storage Temperature Range|TJ,TSTG|−55 to 175|°C|
|Maximum Temperature for Soldering Leads at 0.063 in (1.6 mm) from Case for 10 s|TL|300|°C|
|Maximum Temperature for Soldering Package Body for 10 s|TPKG|260|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **PACKAGE MARKING AND ORDERING INFORMATION** 

|**Part Number**|**Top Mark**|**Package**|**Packing**<br>**Methode**|**Reel Size**|**Tape Width**|**Quantity**|
|---|---|---|---|---|---|---|
|R3060G2|ISL9R3060G2|TO−247−2L|Tube|N/A|N/A|30|
|R3060G2|ISL9R3060P2|TO−220AC−2L|Tube|N/A|N/A|50|



## **ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) 

|**ELECTRICAL**|**CHARACTERISTICS**(TC= 25°C unl|ess otherwise noted)|ess otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**||**Min.**|**Typ.**|**Max.**|**Unit**|
|**OFF STATE CHARACTERISTICS**||||||||
|IR|Instantaneous Reverse Current|VR= 600 V|TC=  25°C|−|−|100|�A|
||||TC=  125°C|−|−|1|mA|
|**ON CHARACTERISTICS**||||||||
|VF|Instantaneous Forward Voltage|IF= 30 A|TC=  25°C|−|2.1|2.4|V|
||||TC=  125°C|−|1.7|2.1|V|
|**DYNAMIC CHARACTERISTICS**||||||||
|CJ|Junction Capacitance|VR= 10 V, IF= 0 A||−|120|−|pF|
|**SWITCHING CHARACTERISTICS**||||||||
|Trr|Reverse Recovery Time|IF= 1 A, diF/dt = 100 A/�s, VR= 30 V||−|27|35|ns|
|||IF= 30 A, diF/dt = 100 A/�s, VR= 30V||−|36|45|ns|
|Trr|Reverse Recovery Time|IF= 30 A<br>diF/dt = 200 A/�s<br>VR= 390 V<br>TC= 25°C||−|36|−|ns|
|IRR|Reverse Recovery Current|||−|2.9|−|A|
|QRR|Reverse Recovery Charge|||−|55|−|nC|
|Trr|Reverse Recovery Time|IF= 30 A<br>dIF/dt = 200 A/�s<br>VR= 390 V,<br>TC= 125°C||−|110|−|ns|
|S|Softness Factor (tb/ta)|||−|1.9|−|−|
|IRR|Reverse Recovery Current|||−|6|−|A|
|QRR|Reverse Recovery Charge|||−|450|−|nC|



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**2** 

**ISL9R3060G2, ISL9R3060P2** 

**ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) (continued) 

|**ELECTRICAL**|**CHARACTERISTICS**(TC= 25°C unl|ess otherwise noted) (continued)|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|**SWITCHING CHARACTERISTICS**|||||||
|Trr|Reverse Recovery Time|IF= 30 A<br>dIF/dt = 1000 A/�s<br>VR= 390 V<br>TC= 125°C|−|60|−|ns|
|S|Softness Factor (tb/ta)||−|1.25|−|−|
|IRR|Reverse Recovery Current||−|21|−|A|
|QRR|Reverse Recovery Charge||−|730|−|nC|
|dIM/dt|Maximum di/dt during tb||−|800|−|A/�s|
|**THERMAL CHARACTERISTICS**|||||||
|R�JC|Thermal Resistance Junction to Case||−|−|0.75|°C/W|
|R�JA|Thermal Resistance Junction to Ambient|TO−247|−|−|30|°C/W|
|R�JA|Thermal Resistance Junction to Ambient|TO−220|−|−|62|°C/W|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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**3** 

**ISL9R3060G2, ISL9R3060P2** 

## **TYPICAL PERFORMANCE CURVES** 

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60<br>175 [o] C<br>50<br>150 [o] C 25 [o] C<br>40<br>125 [o] C<br>30<br>20<br>100 [o] C<br>10<br>0<br>0 0.5 1.0 1.5 2.0 2.5 3.0<br>VF, Forward Voltage (V)<br>, Forward Current (A)<br>IF<br>**----- End of picture text -----**<br>


**Figure 1. Forward Current vs. Forward Voltage** 

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100 VR = 390V, TJ  = 125�C<br>90 t b  AT di F /dt = 200A/�s, 500A/�s, 800A/�s<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10 ta AT diF /dt = 200A/�s, 500A/�s, 800A/�s<br>0<br>0 10 20 30 40 50 60<br>IF, Forward Current (A)<br>t, Recovery Times (ns)<br>**----- End of picture text -----**<br>


**Figure 3. ta and tb Curves vs. Forward Current** 

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, Max Reverse Recovery Current (A)<br>IRR<br>**----- End of picture text -----**<br>


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20<br>VR = 390V, TJ  = 125�C diF /dt = 800A/�s<br>18<br>16<br>14 diF /dt = 500A/�s<br>12<br>10<br>8<br>diF /dt = 200A/�s<br>6<br>4<br>0 10 20 30 40 50 60<br>IF, Forward Current (A)<br>**----- End of picture text -----**<br>


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5000<br>175 [o] C<br>1000<br>150 [o] C<br>125 [o] C<br>100<br>100 [o] C<br>75 [o] C<br>10<br>1<br>25 [o] C<br>0.1<br>100 200 300 400 500 600<br>VR, Reverse Voltage (V)<br>Figure 2. Reverse Current vs. Reverse Voltage<br>120<br>VR = 390V, TJ  = 125�C<br>100<br>tb AT IF = 60A, 30A, 15A<br>80<br>60<br>40<br>20<br>ta AT IF = 60A, 30A, 15A<br>0<br>200 400 600 800 1000 1200 1400 1600<br>diF/dt, Current Rate of Change (A/ � s)<br>Figure 4. ta and tb Curves vs. diF/dt<br>30<br>VR = 390V, TJ  = 125�C IF = 60A<br>25<br>IF = 30A<br>20 I F  = 15A<br>15<br>10<br>5<br>0<br>200 400 600 800 1000 1200 1400 1600<br>diF/dt, Current Rate of Change (A/ � s)<br>A)<br>�<br>, Reverse Current (<br>IR<br>t, Recovery Times (ns)<br>, Max Reverse Recovery Current (A)<br>IRR<br>**----- End of picture text -----**<br>


**Figure 2. Reverse Current vs. Reverse Voltage** 

**Figure 5. Maximum Reverse Recovery Current vs. Forward Current** 

**Figure 6. Maximum Reverse Recovery Current vs. diF/dt** 

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**4** 

**ISL9R3060G2, ISL9R3060P2** 

## **TYPICAL PERFORMANCE CURVES** 

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2.5<br>IF = 60A VR = 390V, TJ  = 125�C<br>2.0 IF = 30A<br>1.5<br>IF = 15A<br>1.0<br>0.5<br>S, Reverse Recovery Softness Factor 200 400 600 800 1000 1200 1400 1600<br>**----- End of picture text -----**<br>


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diF/dt, Current Rate of Change (A/ � s)<br>**----- End of picture text -----**<br>


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1200<br>VR = 390V, TJ  = 125�C IF = 60A<br>1000<br>800 I F  = 30A<br>600<br>IF = 15A<br>400<br>200<br>200 400 600 800 1000 1200 1400 1600<br>diF/dt, Current Rate of Change (A/ � s)<br>, Reverse Recovery Charge (nC)<br>RR<br>Q<br>**----- End of picture text -----**<br>


**Figure 7. Reverse Recovery Softness Factor vs. diF/dt** 

**Figure 8. Reverse Recovery Charge vs. diF/dt** 

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1000<br>800<br>600<br>400<br>200<br>0<br>0.1 1 10 100<br>VR, Reverse Voltage (V)<br>, Junction Capacitance (pF)<br>J<br>C<br>**----- End of picture text -----**<br>


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90<br>75<br>60<br>45<br>30<br>15<br>0<br>25     50     75    100     125    150   175<br>TC, Case Temperature ( � C)<br>IF(AV), Average Forward Current (A)<br>**----- End of picture text -----**<br>


**Figure 9. Junction Capacitance vs. Reverse Voltage** 

**Figure 10. Forward Current Derating Curve** 

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DUTY CYCLE − DESCENDING ORDER<br>0.5<br>1.0 0.2<br>0.1<br>0.05<br>0.02<br>0.01<br>P DM<br>0.1<br>t1<br>t2<br>NOTES:<br>SINGLE PULSE DUTY FACTOR: D = t PEAK T J  = P DM  x Z � JA1/t  x R 2 � JA + T A<br>0.01<br>10−5 10−4 10−3 10−2 10−1 100 101<br>t, Rectangular Pulse Duration (s)<br>, Normalized Thermal Impedance<br>JA<br>�<br>Z<br>**----- End of picture text -----**<br>


**Figure 11. Normalized Maximum Transient Thermal Impedance** 

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**5** 

**ISL9R3060G2, ISL9R3060P2** 

## **TEST CIRCUITS AND WAVEFORMS** 

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VGE AMPLITUDE AND<br>RG CONTROL dlF/dt L<br>t1 AND t2 CONTROL IF<br>DUT CURRENT<br>RG SENSE<br>VGE +<br>VDD<br>t1 MOSFET −<br>t2<br>**----- End of picture text -----**<br>


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IF dIdtF ta Trr tb<br>0<br>0.25I RM<br>IRM<br>**----- End of picture text -----**<br>


**Figure 12. Trr Test Circuit** 

**Figure 13. Trr Waveforms and Definitions** 

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I = 1 A<br>L = 40 mH<br>R < 0.1  �<br>VDD = 50 V<br>EAVL = 1/2LI2 [VR(AVL)/(VR(AVL)−VDD)]<br>Q1 = IGBT (BVCES > DUT VR(AVL))<br>L R<br>CURRENT +<br>SENSE VDD<br>Q1<br>VDD<br>DUT −<br>**----- End of picture text -----**<br>


**Figure 14. Avalanche Energy Test Circuit** 

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VAVL<br>IL IL<br>I V<br>t0 t1 t2 t<br>**----- End of picture text -----**<br>


**Figure 15. Avalanche Current and Voltage Waveforms** 

STEALTH is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. 

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**6** 

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MECHANICAL CASE OUTLINE<br>PACKAGE DIMENSIONS<br>TO−220−2LD<br>CASE 340BA<br>ISSUE O<br>DATE 31 AUG 2016<br>4.036<br>10.360 3.636<br>A<br>10.109 0.36 M B A C<br>B 8.89<br>2.860 1.400 6.477<br>6.86<br>2.660 1.146 6.121<br>7°<br>3 3°<br>15.215<br>14.757<br>i te_ 8.7878.587 53°° a 53°° oT<br>1 2<br>0.60 MAX<br>13.894 2.755<br>1.65 3.962<br>12.941 2.555<br>1.25 3.720<br>1.91 0.889<br>0.787<br>t ad, 0.36 M C A B o | T<br>0.457<br>2.640<br>0.357<br>2.440<br>RAE 5.180 5<br>4.980<br>5° 5° NOTES:<br>3° 3°   A. PACKAGE REFERENCE: JEDEC TO220       VARIATION AC.<br>  B. ALL DIMENSIONS ARE IN MILLIMETERS.<br>  C. DIMENSION AND TOLERANCE AS PER ASME<br>Y14.5−2009.<br>oan 4.672<br>  D. DIMENSIONS ARE EXCLUSIVE OF BURRS,<br>4.472<br>**----- End of picture text -----**<br>


- D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON13831G** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: TO−220−2LD PAGE 1 OF 1** ~~Se~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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© Semiconductor Components Industries, LLC, 2019 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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TO−247−2LD<br>CASE 340CL<br>ISSUE A<br>**----- End of picture text -----**<br>


DATE 03 DEC 2019 

## **GENERIC** 

**MARKING DIAGRAM*** ~~|~~ ) ( AYWWZZ XXXX = Specific Device Code XXXXXXX A = Assembly Location XXXXXXX Y = Year WW = Work Week ZZ = Assembly Lot Code ~~|~~ *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. 

## **DOCUMENT NUMBER:** 

## **98AON13850G** 

**DESCRIPTION: TO−247−2LD** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

**PAGE 1 OF 1** 

ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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© Semiconductor Components Industries, LLC, 2018 

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