ISL9R30120G2

## **Is Now Part of** 

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## **ISL9R30120G2** 

## **30 A, 1200 V STEALTH™ Diode** 

## **Features** 

- Stealth Recovery trr = 269 ns (@ IF = 30 A) 

- Max Forward Voltage, VF = 3.3 V (@ TC = 25°C) 

- 1200 V Reverse Voltage and High Reliability 

- Avalanche Energy Rated 

- RoHS Compliant 

## **Applications** 

- Switch Mode Power Supplies 

- Hard Switched PFC Boost Diode 

## **Description** 

The ISL9R30120G2 is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRR and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. 

- UPS Free Wheeling Diode 

- Motor Drive FWD 

- SMPS FWD 

- Snubber Diode 

## **Symbol** 

## **Package** 

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JEDEC STYLE 2 LEAD TO-247<br>CATHODE<br>(BOTTOM SIDE<br>METAL)<br>**----- End of picture text -----**<br>


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ANODE<br>CATHODE K<br>A<br>**----- End of picture text -----**<br>


## **Device Maximum Ratings** TC = 25°C unless otherwise noted 

|**Device Maximum Ratings  **TCC = 25°C unless otherwise noted||
|---|---|
|Parameter|Rating|
|Repetitive Peak Reverse Voltage|1200|
|WorkingPeak Reverse Voltage|1200|
|DC BlockingVoltage|1200|
|Average Rectified Forward Current(TC= 80oC)|30|
|Repetitive Peak Surge Current(20 kHz Square Wave)|70|
|Nonrepetitive Peak Surge Current(Halfwave 1 Phase 60 Hz)|325|
|Power Dissipation|166|
|Avalanche Energy (1 A, 40 mH)|20|
|Operatingand Storage Temperature Range|-55 to 175|
|Maximum Temperature for Soldering<br>Leads at 0.063 in (1.6 mm) from Case for 10 s<br>Package Body for 10s, See Application Note AN-7528|300<br>260|



CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. 

©2002 Fairchild Semiconductor Corporation ISL9R30120G2 Rev. C2 

www.fairchildsemi.com 

**1** 

**Package Marking and Ordering Information** 

|**Electrical CharacteristicsTC = 25°C unless otherwise noted**<br>**Off State Characteristics**<br>**On State Characteristics**<br>**Dynamic Characteristics**<br>**Switching Characteristics**<br>TopMark<br>Part Number<br>Package<br>Tape Width<br>Quantity<br>R30120G2<br>ISL9R30120G2<br>TO-247<br>N/A<br>30<br>Symbol<br>Parameter<br>Test Conditions<br>Min<br>Typ<br>Max<br>Unit<br>IR<br>Instantaneous Reverse Current<br>VR= 1200 V<br>TC= 25°C<br>-<br>-<br>100<br>µA<br>TC= 125°C<br>-<br>-<br>1.0<br>mA<br>VF<br>Instantaneous Forward Voltage<br>IF= 30 A<br>TC= 25°C<br>-<br>2.8<br>3.3<br>V<br>TC= 125°C<br>-<br>2.6<br>3.1<br>V<br>CJ<br>Junction Capacitance<br>VR= 10 V, IF= 0 A<br>-<br>115<br>-<br>pF<br>trr<br>Reverse Recovery Time<br>IF= 1 A, dI/dt = 100 A/µs, VR= 15 V<br>-<br>45<br>56<br>ns<br>IF= 30 A, dI/dt = 100 A/µs, VR= 15 V<br>-<br>80<br>100<br>ns<br>trr<br>Reverse Recovery Time<br>IF= 30 A,<br>dIF/dt = 200 A/µs,<br>VR= 780 V, TC= 25°C<br>-<br>269<br>-<br>ns<br>Irr<br>Reverse Recovery Current<br>-<br>7.5<br>-<br>A<br>Qrr<br>Reverse Recovered Charge<br>-<br>930<br>-<br>nC<br>trr<br>Reverse Recovery Time<br>IF= 30 A,<br>dIF/dt = 200 A/µs,<br>VR= 780 V,<br>TC= 125°C<br>-<br>529<br>-<br>ns<br>S<br>Softness Factor (tb/ta)<br>-<br>6.2<br>-<br>-<br>Irr<br>Reverse Recovery Current<br>-<br>11<br>-<br>A<br>Qrr<br>Reverse Recovered Charge<br>-<br>3.0<br>-<br>µC<br>PackingMethod<br>Tube<br>~~4~~<br>~~CO~~<br>~~fo~~<br>~~EEE |~~<br>~~acer~~<br>~~ee ee ee~~<br>~~i~~<br>~~OS~~<br>~~— (ake~~<br>~~ee~~<br>~~|~~<br>~~e-- WO~~<br>~~———~~<br>~~===~~|
|---|
|trr<br>Reverse Recovery Time<br>IF= 30 A,<br>dIF/dt = 1000 A/µs,<br>VR= 780 V,<br>TC= 125°C<br>-<br>260<br>-<br>ns<br>S<br>Softness Factor (tb/ta)<br>-<br>4.8<br>-<br>-<br>Irr<br>Reverse Recovery Current<br>-<br>30<br>-<br>A<br>Qrr<br>Reverse Recovered Charge<br>-<br>3.4<br>-<br>µC<br>dIM/dt<br>Maximum di/dt during tb<br>-<br>520<br>-<br>A/µs<br>~~=——~~<br>~~Ee~~|
|**Thermal Characteristics**|
|RθJC<br>Thermal Resistance Junction to Case<br>TO-247<br>-<br>-<br>0.75<br>°C/W<br>RθJA<br>Thermal Resistance Junction to Ambient TO-247<br>-<br>-<br>30<br>°C/W<br>~~|~~<br>~~HFtH~~|



©2002 Fairchild Semiconductor Corporation ISL9R30120G2 Rev. C2 

www.fairchildsemi.com 

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Typical Performance Curves<br>**----- End of picture text -----**<br>


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60 1000<br>150 [o] C<br>50 See) 150 [o] C S e 100 o 125 [o] C eesaa==<br>40 SEER: 125 [o] C 100 [o] C<br>AR 10 ==se===———<br> 75 [o] C<br>30<br>1<br>100 [o] C<br>20<br>TI FA |) Ge<br>25 [o] C 0.1  25 [o] C<br>10 a ASS = =se===——-<br>0 SE | | 0.01 <== ===><br>0.5 1 1.5 2 2.5 3 3.5 4 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2<br>VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (KV)<br>Figure 1. Forward Current vs Forward Voltage Figure 2. Reverse Current vs Reverse Voltage<br>750 750<br>VR = 780V, TC = 125 [o] C VR = 780V, TC = 125 [o] C<br>625 625<br>tb at dIF/dt = 200A/µs, 500A/µs, 800A/µs tb at IF = 60A, 30A, 15A<br>500 500<br>375 375<br>Ps= Se<br>250 250<br>= Se<br>125 Zan t a  at dI F /dt = 200A/µs, 500A/µs, 800A/µs 125 ta at IF = 60A, 30A, 15A<br>0 A= 3 s 0<br>0 10 20 30 40 50 60 200 400 600 800 1000 1200<br>IF , FORWARD CURRENT (A) dIF /dt, CURRENT RATE OF CHANGE (A/µs)<br>Figure 3. ta and tb Curves vs Forward Current Figure 4. ta and tb Curves vs dIF/dt<br>40 40<br>VR = 780V, TC = 125 [o] C VR = 780V, TC = 125 [o] C<br>35<br>30 dI F /dt = 800A/µs —7<br>foo 30 eee<br>dIF/dt = 500A/µs<br>20 25<br>IF = 60A<br>dIF/dt = 200A/µs 20<br>10 (Em } IF = 30A aT<br>15<br>IF = 15A<br>0 a = 10 GfVaraLiman<br>0 10 20 30 40 50 60 200 400 600 800 1000 1200<br>IF, FORWARD CURRENT (A) dIF /dt, CURRENT RATE OF CHANGE (A/µs)<br>Figure 5. Maximum Reverse Recovery Current vs  Figure 6. Maximum Reverse Recovery Current vs<br>Forward Current dIF/dt<br>, FORWARD CURRENT (A)IF , REVERSE CURRENT (µA)  IR<br>t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns)<br>, MAX REVERSE RECOVERY CURRENT (A) , MAX REVERSE RECOVERY CURRENT (A)<br>IRR IRR<br>**----- End of picture text -----**<br>


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www.fairchildsemi.com 

©2002 Fairchild Semiconductor Corporation ISL9R30120G2 Rev. C2 

## **Typical Performance Curves** (Continued) 

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9 6.0<br>VR = 780V, TC = 125 [o] C VR = 780V, TC = 125 [o] C<br>5.6<br>8 IF = 60A<br>Se IF = 60A 5.0 SS<br>7 | —_ ea<br>4.5<br>6 4.0<br>. | | IF = 30A | tf— aee IF = 30A<br>3.5<br>5<br>ES tt<br>3.0<br>4 IF = 15A IF = 15A<br>ot 2.5 a<br>3 2.0<br>200 | | 400 600 rE 800 1000 1200 200 — 400 600 800 1000 1200<br>dIF/dt, CURRENT RATE OF CHANGE (A/µs) dIF/dt, CURRENT RATE OF CHANGE (A/µs)<br>Figure 7. Reverse Recovery Softness Factor vs  Figure 8. Reverse Recovery Charge vs dIF/dt<br>dIF/dtF/dt/dt<br>1600 -14 400<br>f = 1MHZ IF = 30A, VR = 780V, dIF /dt = 500A/µs<br>1400<br>SU<br>1200 ENEUTC -16 IRM(REC) 350<br>C CT<br>1000 CHINE<br>800 211) FCA CT -18 300<br>600400 211)211)SCANSS -20 250<br>200 tRR<br>HEE FET TSS CT<br>0 21NA -22 200<br>0.03 0.1 1 10 ee 100 25 50 75 100 125 150<br>VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE ( [o] C)<br>, REVERSE RECOVERED CHARGE (µC)<br>RR<br>Q<br>S, REVERSE RECOVERY SOFTNESS FACTOR<br>t, RECOVERY TIMES (ns)<br>C, JUNCTION CAPACITANCE (pF)J  , MAX REVERSE RECOVERY CURRENT (A)<br>IRM(REC)<br>**----- End of picture text -----**<br>


**Figure 7. Reverse Recovery Softness Factor vs dIF/dtF/dt/dt** 

**Figure 9.  Junction Capacitance vs Reverse Voltage** 

**Figure 10. Maximum Reverse Recovery Current and trr vs Case Temperature** 

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80<br>60<br>40<br>20<br>0<br>25 50 75 100 125 150 175<br>Case temperature, TC [ [o] C]<br> [A]<br>F(AV)<br>Average Forward Current, I<br>**----- End of picture text -----**<br>


**Figure 11.  DC Current Derating Curve** 

www.fairchildsemi.com 

©2002 Fairchild Semiconductor Corporation ISL9R30120G2 Rev. C2 

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Typical Performance Curves  (Continued)<br>**----- End of picture text -----**<br>


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DUTY CYCLE - DESCENDING ORDER<br>0.5<br>1.0 0.2<br>0.1<br>0.05 0.020.01 |a| TTT | feegpriiiy TT ETT TTT TE EE llI<br>oe P DM<br>tet l<br>0.1<br>t1<br>meee |<br>t2<br>os 200 NOTES:<br>SINGLE PULSE DUTY FACTOR: D = t1/t2<br>PEAK T J  = P DM  x Z θ JA  x R θ JA  + T A<br>0.01 VAAisin) TEINUMM CLIT | TTI TTI l|<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1]<br>t, RECTANGULAR PULSE DURATION (s)<br>Figure 12.  Normalized Maximum Transient Thermal Impedance<br>Test Circuit and Waveforms<br>VGE AMPLITUDE AND<br>RG CONTROL dIF/dt L<br>t1 AND t2 CONTROL IF IF dIdtF ta trr tb<br>DUT CURRENT<br>RG SENSE 0<br>VGE SU t1 po MOSFET = -+VDD  aae 0.25 IIRM RM<br>> t2 ~ <« =—<br>Figure 13.  trr Test Circuit Figure 14. trr Waveforms and Definitions<br>I = 1A<br>L = 40mH<br>R < 0.1 Ω<br>VDD = 50V<br>EAVL = 1/2LI [2]  [VR(AVL)/(VR(AVL) - VDD)]<br>Q1 = IGBT (BVCES > DUT VR(AVL)) L R VAVL<br>CURRENT +<br>SENSE VDD IL IL<br>Q1 I V<br>VDD<br>JL ft DUT - 7 a _ \<br>t0 t1 t2 t —<br>Figure 15.  Avalanche Energy Test Circuit Figure 16. Avalanche Current and Voltage<br>NORMALIZED<br>JA,<br>θ<br>Z<br>THERMAL IMPEDANCE<br>**----- End of picture text -----**<br>


**Figure 16. Avalanche Current and Voltage Waveforms** 

©2002 Fairchild Semiconductor Corporation ISL9R30120G2 Rev. C2 

www.fairchildsemi.com 

**5** 

## **Mechanical Dimensions** 

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TO-247 2L<br>**----- End of picture text -----**<br>


**Figure 17. TO-247,Molded, 2LD, Jedec Option AB** _Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products._ 

_Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-002._ 

www.fairchildsemi.com 

**6** 

©2002 Fairchild Semiconductor Corporation ISL9R30120G2 Rev. C2 

## **TRADEMARKS** 

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 

AccuPower™ F-PFS™ Sync-Lock™ AX-CAP[®] * FRFET[®] ® ®* BitSiC™ Global Power Resource[SM] PowerTrench[®] E GENERALSYSTEM Build it Now™ GreenBridge™ PowerXS™ CorePLUS™ Green FPS™ Programmable Active Droop™ TinyBoost[®] CorePOWER™ Green FPS™ e-Series™ QFET[®] TinyBuck[®] _CROSSVOLT_ ™ G _max_ ™ QS™ TinyCalc™ CTL™ GTO™ Quiet Series™ TinyLogic[®] TINYOPTO™ Current Transfer Logic™ IntelliMAX™ RapidConfigure™ DEUXPEED[®] ISOPLANAR™ ™ TinyPower™ Dual Cool™ Marking Small Speakers Sound Louder TinyPWM™ EcoSPARK[®] and Better™ Saving our world, 1mW/W/kW at a time™ TinyWire™TranSiC™ EfficentMax™ MegaBuck™ SignalWise™ TriFault Detect™ ESBC™ MICROCOUPLER™ SmartMax™ TRUECURRENT[®] * ® MicroFET™MicroPak™ SMART START™Solutions for Your Success™ SerDes™ Fairchild[®] MicroPak2™ SPM[®] Fairchild Semiconductor[®] MillerDrive™ STEALTH™ 74... FACT Quiet Series™ MotionMax™ SuperFET[®] UHC[®] FACT[®] mWSaver[®] SuperSOT™-3 Ultra FRFET™ FAST[®] OptoHiT™ SuperSOT™-6 UniFET™ FastvCore™ OPTOLOGIC[®] SuperSOT™-8 VCX™ FETBench™ OPTOPLANAR[®] SupreMOS[®] VisualMax™ FPS™ SyncFET™ VoltagePlus™ XS™ 

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 

## **DISCLAIMER** 

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. 

As used here in: 

1. Life support devices or systems are devices or systems which, (a) are 2. intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 

A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 

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Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. 

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. 

## **PRODUCT STATUS DEFINITIONS Definition of Terms** 

|**Datasheet Identification**|**Product Status**|**Definition**|
|---|---|---|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications<br>may change in any manner without notice.|
|Preliminary|First Production|Datasheet contains preliminary data; supplementary data will be published at a later<br>date. Fairchild Semiconductor reserves the right to make changes at any time without<br>notice to improve design.|
|No Identification Needed|Full Production|Datasheet contains final specifications. Fairchild Semiconductor reserves the right to<br>make changes at any time without notice to improve the design.|
|Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild<br>Semiconductor. The datasheet is for reference information only.|



Rev. I66 

©2002 Fairchild Semiconductor Corporation ISL9R30120G2 Rev. C2 

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**7** 

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