ISL9R18120S3ST

## STEALTH Diode 

## **18 A, 1200 V** 

## ISL9R18120G2, ISL9R18120S3S 

## **Description** 

The ISL9R18120G2, ISL9R18120S3S is a STEALTH diode optimized for low loss performance in high frequency hard switched applications. The STEALTH family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRR and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. 

## **Features** 

- Stealth Recovery trr = 300 ns (@ IF = 18 A) 

- Max Forward Voltage, VF = 3.3 V (@ TC = 25°C) 

- 1200 V Reverse Voltage and High Reliability 

- Avalanche Energy Rated 

- These Devices are Pb−Free and are RoHS Compliant 

## **Applications** 

## **www.onsemi.com** 

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CATHODE ANODE<br>(BOTTOM SIDE CATHODE<br>METAL)<br>$Y&Z&3&K<br>R18120G2<br>TO−247−2LD<br>0 CASE 340CL<br>CATHODE<br>(FLANGE)<br>$Y&Z&3&K<br>R18120S3S<br>N/C<br>ANODE<br>D [2] PAK−3 (TO−263, 3−LEAD) a s<br>CASE 418AJ<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

- Hard Switched PFC Boost Diode 

- UPS Free Wheeling Diode 

- Motor Drive FWD 

- SMPS FWD 

- Snubber Diode 

$Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code R18120G2, R18120S3S = Specific Device Code 

## **SYMBOL** 

K A 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 2 of this data sheet. 

Publication Order Number: **ISL9R18120S3S/D** 

**1** 

© Semiconductor Components Industries, LLC, 2002 **March, 2020 − Rev. 3** 

## **ISL9R18120G2, ISL9R18120S3S** 

## **DEVICE MAXIMUM RATINGS** (TC = 25 ° C unless otherwise noted) 

|**DEVICE MAXIMUM RATINGS**(TC= 25°C unless otherwise noted)||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Ratings**|**Unit**|
|Repetitive Peak Reverse Voltage|VRRM|1200|V|
|Working Peak Reverse Voltage|VRWM|1200|V|
|DC Blocking Voltage|VR|1200|V|
|Average Rectified Forward Current (TC= 92°C)|IF(AV)|18|A|
|Repetitive Peak Surge Current (20 kHz Square Wave)|IFRM|36|A|
|Non−repetitive Peak Surge Current (Halfwave 1 Phase 60 Hz)|IFSM|200|A|
|Power Dissipation|PD|125|W|
|Avalanche Energy (1 A, 40 mH)|EAVL|20|mJ|
|Operating and Storage Temperature Range|TJ,TSTG|−55 to +175|°C|
|Maximum Temperature for Soldering<br>Leads at 0.063 in (1.6 mm) from Case for 10 s<br>Package Body for 10 s|TL<br>TPKG|300<br>260|°C<br>°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **PACKAGE MARKING AND ORDERING INFORMATION** 

|**Device**|**Device Marking**|**Package**|**Packing Method**|**Tape Width**|**Quantity**|
|---|---|---|---|---|---|
|ISL9R18120G2|R18120G2|TO−247−2LD|Tube|N/A|30|
|ISL9R18120S3ST|R18120S3S|TO−263−3LD (D2−PAK)|Reel|24 mm|800|



## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|Thermal Resistance Junction to Case|R�JC|TO−247, TO−263|−|−|1.0|°C/W|
|Thermal Resistance Junction to Ambient|R�JA|TO−247|−|−|30|°C/W|
|Thermal Resistance Junction to Ambient|R�JA|TO−263|−|−|62|°C/W|



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**2** 

## **ISL9R18120G2, ISL9R18120S3S** 

**ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) 

|**Parameter**|**Symbol**|**Test Conditions**||**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|**Off State Characteristics**||||||||
|Instantaneous Reverse Current|IR|VR= 1200 V|TC= 25°C|−|−|100|�A|
||||TC= 125°C|−|−|1.0|mA|
|**On State Characteristics**||||||||
|Instantaneous Forward Voltage|VF|IF= 18 A|TC= 25°C|−|2.7|3.3|V|
||||TC= 125°C|−|2.5|3.1|V|
|**Dynamic Characteristics**||||||||
|Junction Capacitance|CJ|VR= 10 V, IF= 0 A||−|69|−|pF|
|**Switching Characteristics**||||||||
|Reverse Recovery Time|trr|IF= 1 A, dIF/dt = 100 A/�s, VR= 30 V||−|38|45|ns|
|||IF= 18 A, dIF/dt = 100 A/�s, VR= 30 V||−|60|70|ns|
|Reverse Recovery Time|trr|IF= 18 A,<br>dIF/dt = 200 A/�s,<br>VR= 780 V,<br>TC= 25°C||−|300|−|ns|
|Reverse Recovery Current|Irr|||−|6.5|−|A|
|Reverse Recovered Charge|Qrr|||−|950|−|nC|
|Reverse Recovery Time|trr|IF= 18 A,<br>dIF/dt = 200 A/�s,<br>VR= 780 V,<br>TC= 125°C||−|400|−|ns|
|Softness Factor (tb/ta)|S|||−|7.0|−|−|
|Reverse Recovery Current|Irr|||−|8.0|−|A|
|Reverse Recovered Charge|Qrr|||−|2.0|−|�C|
|Reverse Recovery Time|trr|IF= 18 A,<br>dIF/dt = 1000 A/�s,<br>VR= 780 V,<br>TC= 125°C||−|235|−|ns|
|Softness Factor (tb/ta)|S|||−|5.2|−|−|
|Reverse Recovery Current|Irr|||−|22|−|A|
|Reverse Recovered Charge|Qrr|||−|2.1|−|�C|
|Maximum di/dt During tb|dIM/dt|||−|370|−|A/�s|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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**3** 

**ISL9R18120G2, ISL9R18120S3S** 

**TYPICAL PERFORMANCE CURVES** 

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30<br>25<br>20 —— off<br>15 fTP| ]|ell Offyy |<br>10<br>aie pfAe<br>5 Ar]> 4a<br>0 ——=i<br>0.25 0.75 1.25 1.75 2.25 2.75 3.25<br>VF, Forward Voltage (V)<br> Forward Current (A)<br>IF,<br>**----- End of picture text -----**<br>


**Figure 1. Forward Current vs. Forward Voltage** 

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600<br>Vp = 780V,Tg = 125°C<br>500400 PTTL [IN] ALT- Nae_ [|<br>300<br>ech aa<br>200<br>Hee<br>1000 KLEeeees SO<br>0 3 6 9 12 15 18 21 24 27 30<br>IF, Forward Current (A)<br>t, Recovery Times (ns)<br>**----- End of picture text -----**<br>


**Figure 3. ta and tb Curves vs. Forward Current** 

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2025 [SLES<br>15 TAT Le|<br>10 AT |<br>5 ATLL TLL lt<br>0 3 6 9 12 15 18 21 24 27 30<br>IF, Forward Current (A)<br> Max Reverse Recovery Current (A)<br>IRR,<br>**----- End of picture text -----**<br>


**Figure 5. Maximum Reverse Recovery Current vs. Forward Current** 

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1000<br>100<br>=== =<br>10<br>SS<br>1 Pe]a1008 FP<br>0.1 meas+SSesSSee ee ee ee ee ee<br>0.01 — | [| | | [| [| [| J| [| f[ |<br>0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2<br>VR, Reverse Voltage (kV)<br>A)<br>, Reverse Current (<br>IR<br>**----- End of picture text -----**<br>


**Figure 2. Reverse Current vs. Reverse Voltage** 

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600 _<br>500400 LNIN | narieetnay 7aD<br>300<br>NIA WAZ<br>200<br>WO 27<br>1000 |Le e eeteeel<br>200 400 600 800 1000 1200 1400<br>dIF/dt, Current Rate of Change (A/ Uu s)<br>Figure 4. ta and tb Curves vs. dIF/dt<br>t, Recovery Times (ns)<br>**----- End of picture text -----**<br>


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25 Foe<br>20<br>||<br>15<br>y 7fAe-<br>10<br>4a<br>5<br>200 400 600 800 1000 1200 1400<br>dIF/dt, Current Rate of Change (A/ Uu s)<br> Max Reverse Recovery Current (A)<br>IRR,<br>**----- End of picture text -----**<br>


**Figure 6. Maximum Reverse Recovery Current vs. dIF/dt** 

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**4** 

**ISL9R18120G2, ISL9R18120S3S** 

## **TYPICAL PERFORMANCE CURVES** (continued) 

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10 3600<br>9 _ 3200 a<br>a<br>8 PON J | | | 2800 +t<br>7 Pot NE 2400 Pot f [ | ff<br>6 Se ee 2000 Sens<br>54 eeneeee 16001200 —TSTTera||.|<br>3 800<br>200 400 600 800 1000 1200 1400 200 400 600 800 1000 1200 1400<br>dIF/dt, Current Rate of Change (A/ Uu s) dIF/dt Current Rate of Change (A/ Uu s)<br>Figure 7. Reverse Recovery Softness Factor Figure 8. Reverse Recovered Charge<br>vs. dIF/dt vs. dIF/dt<br>1200 −8.5 400<br>CTI] −9.0 7 | 380<br>1000<br>se Nw<br>−9.5 360<br>SOICN CET | |<br>800<br>−10.0 340<br>ne PF [[NE]<br>600 CNC −10.5 | Fs] 320<br>COC TCC == −11.0  SASFee 300<br>400<br>−11.5 280<br>200 COC TMNCMIETM = LE NN=<br>−12.0 260<br>0 CTCMt = −12.5 lL |4-4| | |NSYS 240<br>0.01 0.1 1 10 100 25 50 75 100 125 150<br>VR, Reverse Voltage (V) TC, Case Temperature ( ° C)<br>Figure 9. Junction Capacitance vs. Reverse Figure 10. Reverse Recovery Current and Times<br>Voltage vs. Case Temperature<br>60<br>40<br>20<br>0 CEN<br>25 50 75 100 125 150 175<br>TC, Case Temperature ( ° C)<br>, Reverse Recovered Charge (nC)<br>RR<br>S, Reverse Recovery Softness Factor Q<br>, Recovery Times (ns)<br>, Junction Capacitance (pF)J , Max Reverse Recovery Current (A) tRR<br>C IRM(REC)<br> Average Forward Current (A)<br>IF(AV),<br>**----- End of picture text -----**<br>


**Figure 11. DC Current Derating Curve** 

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**5** 

**ISL9R18120G2, ISL9R18120S3S** 

## **TYPICAL PERFORMANCE CURVES** (continued) 

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**Figure 12. Normalized Maximum Transient Thermal Impedance** 

## **TEST CIRCUIT AND WAVEFORMS** 

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VGE AMPLITUDE AND<br>RG CONTROL dIF/dt L<br>t1 AND t2 Control IF<br>RG DUT CURRENTSENSE + IF dIdtF ta trr tb<br>VGE | t1 tot MOSFET −VDD 0 4<br>0.25 IRM<br>t2 IRM<br>Figure 13. trr Test Circuit Figure 14. trr Waveforms and Definitions<br>I = 1 A<br>L = 40 mH<br>R < 0.1  Q<br>VDD = 50 V<br>EAVL = 1/2LI [2]  [VR(AVL)/(VR(AVL) − VDD)]<br>Q1 = IGBT (BVCES > DUT VR(AVL) VAVL<br>L R<br>CURRENT +<br>SENSE VDD IL IL<br>Q1 I V<br>VDD<br>DUT −<br>t0 t1 t2 t<br>**----- End of picture text -----**<br>


**Figure 15. Avalanche Energy Test Circuit** 

**Figure 16. Avalanche Current and Voltage Waveforms** 

STEALTH is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. 

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**6** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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TO−247−2LD<br>CASE 340CL<br>ISSUE A<br>**----- End of picture text -----**<br>


DATE 03 DEC 2019 

## **GENERIC** 

**MARKING DIAGRAM*** ~~|~~ ) ( AYWWZZ XXXX = Specific Device Code XXXXXXX A = Assembly Location XXXXXXX Y = Year WW = Work Week ZZ = Assembly Lot Code ~~|~~ *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. 

## **DOCUMENT NUMBER:** 

## **98AON13850G** 

**DESCRIPTION: TO−247−2LD** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

**PAGE 1 OF 1** 

ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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## MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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D [2] PAK−3 (TO−263, 3−LEAD)<br>CASE 418AJ<br>ISSUE F<br>SCALE 1:1<br>**----- End of picture text -----**<br>


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XXXXXX = Specific Device Code<br>OP TI ON A L CONS T RUC TI ONS<br>A = Assembly Location<br>GENERIC MARKING DIAGRAMS* WL = Wafer Lot<br>Y = Year<br>WW = Work Week<br>XX AYWW W = Week Code (SSG)<br>XXXXXXXXX XXXXXXXXG XXXXXXXXG XXXXXX M = Month Code (SSG)<br>AWLYWWG AYWW  AKA XXYMW G = Pb−Free Package<br>AKA = Polarity Indicator<br>*This information is generic. Please refer to<br>device data sheet for actual part marking.<br>Pb−Free indicator, “G” or microdot “ ”,<br>may or may not be present. Some products<br>IC Standard Rectifier SSG may not follow the Generic Marking.<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98AON56370E Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: D [2] PAK−3 (TO−263, 3−LEAD) PAGE 1 OF 1<br>**----- End of picture text -----**<br>


ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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