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ISG0613N04NM6HATMA1
Dual MOSFET, Dual N Channel, 40 V, 299 A, 880 µohm
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- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 10Pins
- Channel Type: Dual N Channel
- Product Range: OptiMOS 6 Series
- Qualification: -
- Transistor Case Style: VITFN-U01
- Operating Temperature Max: 175°C
- Power Dissipation N Channel: 167W
- Power Dissipation P Channel: -
- Drain Source Voltage Vds N Channel: 40V
- Drain Source Voltage Vds P Channel: -
- Continuous Drain Current Id N Channel: 299A
- Continuous Drain Current Id P Channel: -
- Drain Source On State Resistance N Channel: 880µohm
- Drain Source On State Resistance P Channel: -
| Delivery and price | |
|---|---|
| Units per pack | 9000 |
| Price | 1.34 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **ISG0613N04NM6H** SS[Gefineon] _— **MOSFET OptiMOS[TM]** 6 Power-Transistor, 40 V V PG-VITFN-10 **==> picture [376 x 93] intentionally omitted <==** **----- Start of picture text -----**<br> 40 V V PG-VITFN-10<br>6 7<br>8<br>9<br>drives and battery powered applications<br>SMPS<br>5 10<br>4<br>DS(on) 3 2 1<br>**----- End of picture text -----**<br> ## **Features** **==> picture [489 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> Q1 Drain<br>Product validation Q1 Gate la Pin 6-7 n *1 Q1<br>Pin 5<br>Fully qualified according to JEDEC for Industrial Applications ARDY 1 Q1 Source<br>2 Q1 Source<br>3 Q2 Drain<br>4 Q2 Drain<br>Q2 Gate *1 Q2<br>Pin 10<br>Table 1 Key Performance Parameters ap<br>Q2 Source<br>Parameter Value Unit Pin 8-9<br>*1: Internal body diode<br>V DS 40 V<br>R DS(on),max 0.88 m Ω<br>I D 299 A<br>Q oss 76 nC<br>Q (0V..10V) 69 nC<br>**----- End of picture text -----**<br> |Type<br>~~/OrderingCode~~|**Package**<br>~~|~~|**Marking**<br>~~|~~|~~ReelatedLinks~~| |---|---|---|---| |ISG0613N04NM6H<br>~~/ Ordering Code~~|PG-VITFN-10<br>~~|~~|613N04N6H<br>~~|~~|-<br>~~Reelated Links~~| Final Data Sheet 1 **OptiMOS[TM] 6�Power-Transistor,�40�V ISG0613N04NM6H** **==> picture [120 x 53] intentionally omitted <==** ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.�2.0,��2023-12-05 **OptiMOS[TM] 6�Power-Transistor,�40�V ISG0613N04NM6H** **==> picture [120 x 53] intentionally omitted <==** **1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified ## **Table�2�����Maximum�ratings** |**Table2Maximumratings**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Continuous drain current1)|_I_D|-<br>-<br>-|-<br>-<br>-|299<br>219<br>42|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,_R_THJA=50°C/W2)| |Pulsed drain current3)|_I_D,pulse|-|-|1196|A|_T_A=25°C| |Avalanche energy, single pulse4)|_E_AS|-|-|366|mJ|_I_D=50A,_R_GS=25Ω| |Gate source voltage|_V_GS|-20|-|20|V|-| |Power dissipation|_P_tot|-<br>-|-<br>-|167<br>3.0|W|_T_C=25°C<br>_T_A=25°C,_R_THJA=50°C/W2)| |Operatingand storage temperature|_T_j,_T_stg|-55|-|175|°C|-| ## **2�����Thermal�characteristics** ## **Table�3�����Thermal�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Thermal resistance,junction - case|_R_thJC|-|0.6|0.9|°C/W|-| |Thermal resistance, junction - ambient,<br>6 cm² cooling area2)|_R_thJA|-|-|50|°C/W|-| > 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. > 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. > 3) See Diagram 3 for more detailed information > 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.�2.0,��2023-12-05 **OptiMOS[TM] 6�Power-Transistor,�40�V ISG0613N04NM6H** **==> picture [120 x 53] intentionally omitted <==** ## **3�����Electrical�characteristics** at� _T_ j=25�°C,�unless�otherwise�specified ## **Table�4�����Static�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Drain-source breakdown voltage|_V_(BR)DSS|40|-|-|V|_V_GS=0V,_I_D=1mA| |Gate threshold voltage|_V_GS(th)|1.8|2.3|2.8|V|_V_DS=_V_GS,_I_D=780µA| |Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=40V,_V_GS=0V,_T_j=25°C<br>_V_DS=40V,_V_GS=0V,_T_j=125°C| |Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V| |Drain-source on-state resistance|_R_DS(on)|-<br>-|0.62<br>0.73|0.88<br>1.20|mΩ|_V_GS=10V,_I_D=50A<br>_V_GS=6V,_I_D=25A| |Gate resistance|_R_G|-|1.0|-|Ω|-| |Transconductance1)|_g_fs|140|-|-|S||_V_DS|≥2|_I_D|_R_DS(on)max,_I_D=50A| ## **Table�5�����Dynamic�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Input capacitance|_C_iss|-|4800|6200|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz| |Output capacitance1)|_C_oss|-|1560|2030|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz| |Reverse transfer capacitance1)|Crss|-|31|54|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz| |Turn-on delay time|_t_d(on)|-|15|-|ns|_V_DD=20V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=1.6Ω| |Rise time|_t_r|-|9.3|-|ns|_V_DD=20V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=1.6Ω| |Turn-off delay time|_t_d(off)|-|32|-|ns|_V_DD=20V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=1.6Ω| |Fall time|_t_f|-|6.1|-|ns|_V_DD=20V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=1.6Ω| ## **Table�6�����Gate�charge�characteristics[2)]** |**Table6Gatechargecharacte**|**ristics2)**|||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Gate to source charge|_Q_gs|-|16|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V| |Gate charge at threshold|_Q_g(th)|-|11|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V| |Gate to drain charge1)|_Q_gd|-|9.6|14|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V| |Switchingcharge|_Q_sw|-|15|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V| |Gate charge total1)|_Q_g|-|69|104|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V| |Gate plateau voltage|_V_plateau|-|3.4|-|V|_V_DD=20V,_I_D=50A,_V_GS=0to10V| |Gate charge total, sync. FET|_Q_g(sync)|-|65|-|nC|_V_DS=0.1V,_V_GS=0to10V| |Output charge1)|_Q_oss|-|76|99|nC|_V_DS=20V,_V_GS=0V| > 1) Defined by design. Not subject to production test. > 2) See ″ Gate charge waveforms ″ for parameter definition Final Data Sheet Rev.�2.0,��2023-12-05 4 **OptiMOS[TM] 6�Power-Transistor,�40�V ISG0613N04NM6H** **==> picture [120 x 53] intentionally omitted <==** ## **Table�7�����Reverse�diode** |**Table7Reversediode**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Diode continuous forward current|_I_S|-|-|164|A|_T_C=25°C| |Diode pulse current|_I_S,pulse|-|-|1196|A|_T_C=25°C| |Diode forward voltage|_V_SD|-|0.79|1|V|_V_GS=0V,_I_F=50A,_T_j=25°C| |Reverse recoverytime|_t_rr|-|40|-|ns|_V_R=20V,_I_F=50A,d_i_F/d_t_=500A/µs| |Reverse recoverycharge|_Q_rr|-|154|-|nC|_V_R=20V,_I_F=50A,d_i_F/d_t_=500A/µs| Final Data Sheet Rev.�2.0,��2023-12-05 5 **OptiMOS[TM]** 6 Power-Transistor, 40 V **ISG0613N04NM6H** **==> picture [539 x 633] intentionally omitted <==** **----- Start of picture text -----**<br> 175 350<br>150 300<br>R E EEE Ep EEE<br>N \ e e ™\ee<br>125 250<br>\ \<br>100 PP INE EE 200 LEE INE<br>75 150<br>PP PIN ELIF EE EAL<br>\ ~<br>50 100<br>tN an<br>25 50<br>0 0<br>0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T C [°C] T C [°C]<br>a P tot=f( T C) I D=f( T C V GS ≥<br>10 [4] 10 [1]<br>single pulse<br>0.01<br>0.02<br>0.05<br>10 [3] en a 0.1 TMC<br>1 µs 0.2<br>10 [0] 0.5<br>10 µs<br>10 [2]<br>- ER 100 µs 10 [-1]<br>ae eee ee NL<br>ee PE eae<br>10 [1] 1 ms<br>=a Seat oeA<br>DC<br>10 [-2]<br>10 [0] Ea NS 10 ms FYE CN<br>SS ee CT Ti TT TTT}<br>SSS CCTM CITI CUI<br>TAI TEP CAUCE<br>10 [-1] 10 [-3] TTT TIN ET<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS [V] t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>P tot I D<br>I D thJC<br>Z<br>**----- End of picture text -----**<br> Final Data Sheet 6 **OptiMOS[TM]** 6 **ISG0613N04NM6H** **==> picture [528 x 633] intentionally omitted <==** **----- Start of picture text -----**<br> 1200 2.4<br>6 V<br>fpf TL ELEL ELL<br>7 V<br>1000 iy<br>10 V | tT tT | yy} Py 2.0<br>4 V<br>5 V<br>Stes} 4.5 V CO<br>800<br>Hoes<br>1.6<br>Wl ae| Sf<br>600<br>zc f/f EDU anne<br>| / Ao 1.2 TL ELT LEE LL<br>400 4.5 V<br>ye) COeer<br>4 V 5 V<br>ff “T_T Tyr<br>200 Po 0.8 a 6 V<br>7 V<br>10 V<br>Poo =————<br>0 0.4<br>pi | i | tT | CA) FETT<br>0 1 2 3 4 0 100 200 300 400 500 600<br>V DS I D<br>[Vv] [A]<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>1200 2.8<br>I jit<br>25 °C<br>1000 2.4<br>ee ff teefee|| tt| f t<br>175 °C Wt<br>800 2.0<br>ff | tp<br>of fp ff<br>Wot<br>600 1.6<br>cfs ft | ttt<br>400 fe fe 1.2 NEopYop] |tt 175 °C =<br>200 0.8<br>eee) ae Nee<br>e/a a 25 °C<br>a Ae |}<br>0 0.4<br>pt | tf yt<br>2.0 2.5 3.0 3.5 4.0 4.5 5.0 3 6 9 12 15<br>V GS V GS<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j R DS(on)=f( V GS I D T j<br>] Ω<br>I D<br>DS(on)<br>R<br>] Ω<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br> Final Data Sheet 7 **==> picture [540 x 744] intentionally omitted <==** **----- Start of picture text -----**<br> OptiMOS [TM]<br>6 Power-Transistor, 40 V Cinfi neon J<br>ISG0613N04NM6H<br>2.0 3.0<br>A) LO<br>1.8<br>ee ——<br>PEELE AT ANE | td<br>2.5<br>1.6<br>ae a SON<br>— PPP rT) LL NNN EE<br>1.4<br>2 | |i} ty} Yi tt yy TT TINNY TT<br>ECL A ie 2.0 ~NeaN<br>7800 µA<br>1.2 780 µA<br>PERSE) TSN<br>2 TLL YELLE oN<br>1.0<br>PEEL YEE ELL 1.5 YEP Ey LAIN |<br>TELIA LLL<br>0.8 TTP FT ELEEN<br>0.6 TT ELLE LLL 1.0<br>-75 -50 -25 0 25 50 75 100 125 150 175 200 -75 -50 -25 0 25 50 75 100 125 150 175 200<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th=f( T j V GS= V DS I D<br>10 [4] 10 [4]<br>25 °C<br>175 °C<br>== a Ciss ee<br>10 [3]<br>pf fff ft | ft | |te<br>Coss<br>10 [3]<br>ee ee ee =<br>SS SSS ft<br>Ne ee es|<br>a ee ee ee) 10 [2]<br>Ne ee So<br>10 [2]<br>Ee i<br>SO \ 10 [1] || | y | ify tl |<br>——— SSSS<br>4 Crss pf<br>10 [1] ft ft a 10 [0] ea<br>0 5 10 15 20 25 30 35 40 0.2 0.4 0.6 0.8 1.0 1.2<br>V DS V SD<br>OC—COOCOCCOOCOCO C =f( V DS V GS f COOCCCOCSC“‘(NNNNN I F=f( V SD)<br>Powe [V] [V]<br>GS(th)<br>V<br>DS(on)<br>R<br>C I F<br>**----- End of picture text -----**<br> Final Data Sheet 8 **OptiMOS[TM] ISG0613N04NM6H** **==> picture [526 x 283] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [2] 10<br>8 V<br>PE a ee 9 Ee 20 V y<br>32 V<br>Po oy<br>a e n a<br>NN | 8 Yd<br>25 °C<br>7<br>HINSHINENE | Ly<br>CCTM NTI STi | }<br>6<br>100 °C<br>z 10 [1] CLAIM LI M A LN| Je 5 ;<br>PoTN<br>or 4 fl] UO<br>150 °C<br>oot AT ,<br>PI | e m] |<br>PT TT PNT 3 ~<br>a ee S| 2 Ft [| fo ff<br>1<br>10 [0] 0<br>10 [0] 10 [1] 10 [2] 10 [3] 0 10 20 30 40 50 60 70<br>t AV [us] Q gate [nC]<br>I AS=f( t AV R GS Ω T j,start V GS=f( Q gate I D T j V DD<br>I AV V GS<br>**----- End of picture text -----**<br> **==> picture [259 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 44<br>43<br>42 fo<br>/,<br>41 /|<br>40<br>39 Lf<br>38<br>-75 -50 -25 0 25 50 75 100 125 150 175 200<br>T j [°C]<br>V BR(DSS)=f( T j I D<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br> ## **Diagram Gate charge waveforms** ~~On~~ Final Data Sheet 9 **OptiMOS[TM] 6�Power-Transistor,�40�V ISG0613N04NM6H** **==> picture [120 x 53] intentionally omitted <==** ## **5�����Package�Outlines** |PACKAGE - GROU<br>NUMBER:|PACKAGE - GROU<br>NUMBER:| |---|---| |**DIMENSIONS**|| |**A**|---| |**A1**|---| |**b**|0.55| |**c**|---| |**D**|| |**D1**|2.00| |**D2**|1.05| |**E**|| |**E1**|3.51| |**E2**|0.80| |**E3**|0.45| |**e**|| |**M**|| |**M1**|| |**K**|| ## **Figure�1�����Outline�PG-VITFN-10,�dimensions�in�mm** Final Data Sheet 10 Rev.�2.0,��2023-12-05 **OptiMOS[TM] ISG0613N04NM6H** ## ISG0613N04NM6H |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects (major changes since last revision)| |2.0|2023-12-05|Release of final version| ## **Trademarks** ## **erratum@infineon.com** ## **Information** ## **Warnings** Final Data Sheet 11
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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