IRLZ24PBF

**IRLZ24** 

Vishay Siliconix 

www.vishay.com 

## **Power MOSFET** 

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TO-220AB<br>**----- End of picture text -----**<br>


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D<br>G<br>S<br>D<br>G S<br>N-Channel MOSFET<br>**----- End of picture text -----**<br>


## **FEATURES** 

- Dynamic dV/dt rating 

- Logic-level gate drive 

Available Available RoHS 

- RDS(on) specified at VGS = 4 V and 5 V 

- 175 °C operating temperature 

- Fast switching 

- Ease of paralleling 

- Simple drive requirements 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

**Note** 

|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|
|---|---|---|
|VDS(V)|60||
|RDS(on)(Ω)|VGS= 5.0 V|0.10|
|Qg(Max.) (nC)|18||
|Qgs(nC)|4.5||
|Qgd(nC)|12||
|Configuration|Single||



- This    datasheet    provides    information    about    parts    that    are RoHS-compliant and / or parts that are non RoHS-compliant.  For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details 

## **DESCRIPTION** 

Third generation power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. 

The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. 

**ORDERING INFORMATION** Package TO-220AB Lead (Pb)-free IRLZ24PbF Lead (Pb)-free and halogen-free IRLZ24PbF-BE3 

**ABSOLUTE MAXIMUM RATINGS** (TC = 25 °C, unless otherwise noted) ~~Cn a~~ **PARAMETER SYMBOL LIMIT UNIT** Drain-source voltage VDS 60 V ~~S~~ Gate-source voltage ~~SS~~ VGS ± 10 TC = 25 °C 17 Continuous drain current VGS at 5 V ~~|~~ ID ~~Pp~~ TC = 100 °C 12 A ~~rea~~ Pulsed drain current[ a] ~~ee ee~~ IDM 68 ~~ee a~~ Linear derating factor 0.40 W/°C ~~a~~ Single pulse avalanche energy[b] EAS 64.1 mJ ~~a~~ Maximum power dissipation TC = 25 °C PD 60 W ~~a~~ Peak diode recovery dV/dt[c] dV/dt 4.5 V/ns Operating junction and storage temperature range TJ, Tstg -55 to +175 °C ~~a~~ Soldering recommendations (peak temperature)[d] For 10 s 300[ d] Mounting torque 6-32 or M3 screw ~~ee~~ 10 lbf · in 1.1 N · m ~~a eeeeee~~ 

## **Notes** 

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 25 V, starting TJ = 25 °C, L = 444 μH, Rg = 25 Ω, IAS = 17 A (see fig. 12) c. ISD ≤ 17 A, dI/dt ≤ 140 A/μs, VDD ≤ VDS, TJ ≤ 175 °C d. 1.6 mm from case 

S21-1046-Rev. E, 25-Oct-2021 

Document Number: 91326 

**1** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRLZ24** 

www.vishay.com 

Vishay Siliconix 

|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TYP.**|**MAX.**|**UNIT**|
|Maximum junction-to-ambient|RthJA|-|62|°C/W|
|Case-to-sink, flat, greased surface|RthCS|0.50|-||
|Maximum junction-to-case (drain)|RthJC|-|2.5||



|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|**Static**||||||||
|Drain-source breakdown voltage|VDS|VGS= 0 V, ID= 250 μA||60|-|-|V|
|VDStemperature coefficient|ΔVDS/TJ|Reference to 25 °C, ID= 1 mA||-|0.060|-|V/°C|
|Gate-source threshold voltage|VGS(th)|VDS= VGS, ID= 250 μA||1.0|-|2.0|V|
|Gate-source leakage|IGSS|VGS=±10||-|-|± 100|nA|
|Zero gate voltage drain current|IDSS|VDS= 60 V, VGS= 0 V||-|-|25|μA|
|||VDS= 48 V, VGS= 0 V, TJ= 150 °C||-|-|250||
|Drain-source on-state resistance|RDS(on)|VGS= 5.0 V|ID= 10 Ab|-|-|0.10|Ω|
|||VGS= 4.0 V|ID= 8.5 Ab|-|-|0.14||
|Forward transconductance|gfs|VDS= 25 V, ID= 10 Ab||7.3|-|-|S|
|**Dynamic**||||||||
|Input capacitance|Ciss|VGS= 0 V,<br>VDS= 25 V,<br>f = 1.0 MHz, see fig. 5||-|870|-|pF|
|Output capacitance|Coss|||-|360|-||
|Reverse transfer capacitance|Crss|||-|53|-||
|Total gate charge|Qg|VGS= 5.0 V|ID= 17 A, VDS= 48 V,<br>see fig. 6 and 13b|-|-|18|nC|
|Gate-source charge|Qgs|||-|-|4.5||
|Gate-drain charge|Qgd|||-|-|12||
|Turn-on delay time|td(on)|VDD= 30 V, ID= 17 A,<br>Rg= 9.0Ω, RD= 1.7Ω, see fig. 10b||-|11|-|ns|
|Rise time|tr|||-|110|-||
|Turn-off delay time|td(off)|||-|23|-||
|Fall time|tf|||-|41|-||
|Internal drain inductance|LD|Between lead,<br>6 mm (0.25") from<br>package and center of<br>die contact<br>D<br>S<br>G||-|4.5|-|nH|
|Internal source inductance|LS|||-|7.5|-||
|**Drain-Source Body Diode Characteristics**||||||||
|Continuous source-drain diode current|IS|MOSFET symbol<br>showing the<br>integral reverse<br>p - n junction diode<br>S<br>D<br>G||-|-|17|A|
|Pulsed diode forward currenta|ISM|||-|-|68||
|Body diode voltage|VSD|TJ= 25 °C, IS= 17 A, VGS= 0 Vb||-|-|1.5|V|
|Body diode reverse recovery time|trr|TJ= 25 °C, IF= 17 A, dI/dt = 100 A/μsb||-|110|260|ns|
|Body diode reverse recovery charge|Qrr|||-|0.49|1.5|μC|
|Forward turn-on time|ton|Intrinsic turn-on time is negligible (turn-on is dominated by LSand LD)||||||



## **Notes** 

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % 

S21-1046-Rev. E, 25-Oct-2021 

Document Number: 91326 

**2** 

For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRLZ24** Vishay Siliconix 

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www.vishay.com<br>**----- End of picture text -----**<br>


## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

**Fig. 1 - Typical Output Characteristics, TC = 25 °C** 

**Fig. 3 - Typical Transfer Characteristics** 

**Fig. 2 - Typical Output Characteristics, TC = 175 °C** 

**Fig. 4 - Normalized On-Resistance vs. Temperature** 

S21-1046-Rev. E, 25-Oct-2021 

Document Number: 91326 

**3** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRLZ24** Vishay Siliconix 

## www.vishay.com 

**Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage** 

**Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage** 

**Fig. 7 - Typical Source-Drain Diode Forward Voltage** 

**Fig. 8 - Maximum Safe Operating Area** 

S21-1046-Rev. E, 25-Oct-2021 

Document Number: 91326 

**4** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRLZ24** 

www.vishay.com 

Vishay Siliconix 

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, Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Fig. 9 - Maximum Drain Current vs. Case Temperature** 

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RD<br>VDS<br>VGS<br>D.U.T.<br>R<br>g + - VDD<br>5.0 V<br>Pulse width ≤ 1 µs<br>Duty factor ≤ 0.1 %<br>Fig. 10a - Switching Time Test Circuit<br>VDS<br>90 % AY, ——*"<br>| i]!|<br>10 % /\ |I<br>VGS _nneya<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig. 10b - Switching Time Waveforms** 

**Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case** 

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L  VDS<br>V DS  t<br>Vary trequired Ip to obtain AS  /<*— p S| VDD<br>/<br>Rg D.U.T. +  VDS<br>-  [V ][DD ]<br>I AS  / |\<br>t+ 5.0 V aeiL // \ J<br>t p  0.01 Ω IAS _ / Lo<br>Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms<br>**----- End of picture text -----**<br>


S21-1046-Rev. E, 25-Oct-2021 

Document Number: 91326 

**5** 

For technical questions, contact: hvm@vishay.com 

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRLZ24** 

Vishay Siliconix 

www.vishay.com 

**Fig. 12c - Maximum Avalanche Energy vs. Drain Current** 

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Current regulator<br>Same type as D.U.T.<br>QG  50 kΩ<br>5.0 V 12 V 0.2 µF<br>0.3 µF<br>QGS  QGD  +<br>D.U.T. - VDS<br>VG  VGS<br>3 mA<br>77 Charge  |<br>IG ID<br>Current sampling resistors<br>**----- End of picture text -----**<br>


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Fig. 13a - Basic Gate Charge Waveform<br>**----- End of picture text -----**<br>


**Fig. 13b - Gate Charge Test Circuit** 

S21-1046-Rev. E, 25-Oct-2021 

Document Number: 91326 

**6** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRLZ24** 

Vishay Siliconix 

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www.vishay.com<br>**----- End of picture text -----**<br>


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Peak Diode Recovery dV/dt Test Circuit<br>+ Circuit layout considerations<br>D.U.T.<br>•  Low stray inductance<br>•  Ground plane<br>•  Low leakage inductance<br>current transformer<br>-<br>+<br>- - +<br>Rg •  dV/dt controlled by Rg +<br>••   Driver same type as D.U.T.ISD controlled by duty factor “D” - VDD<br>•  D.U.T. - device under test<br>Driver gate drive<br>Period D = P.W.<br>P.W. Period<br>VGS = 10 V [a]<br>D.U.T. lSD waveform<br>Reverse<br>recovery Body diode forward<br>current current dI/dt<br>D.U.T. VDS waveform Diode recovery<br>dV/dt<br>VDD<br>Re-applied<br>voltage<br>Body diode forward drop<br>Inductor current<br>Ripple ≤ 5 % ISD<br>Note<br>a. VGS = 5 V for logic level devices<br>**----- End of picture text -----**<br>


**Fig. 14 - For N-Channel** 

_Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91326._ 

Document Number: 91326 

S21-1046-Rev. E, 25-Oct-2021 

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For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Package Information** 

Vishay Siliconix 

www.vishay.com 

## **TO-220-1** 

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A<br>E<br>F<br>Ø P<br>1 2 3<br>M [*]<br>b(1)<br>C<br>b<br>e<br>J(1)<br>e(1)<br>Q<br>H(1)<br>D<br>L(1)<br>L<br>**----- End of picture text -----**<br>


|**DIM.**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|
|---|---|---|---|---|
||**MIN.**|**MAX.**|**MIN.**|**MAX.**|
|A|4.24|4.65|0.167|0.183|
|b|0.69|1.02|0.027|0.040|
|b(1)|1.14|1.78|0.045|0.070|
|c|0.36|0.61|0.014|0.024|
|D|14.33|15.85|0.564|0.624|
|E|9.96|10.52|0.392|0.414|
|e|2.41|2.67|0.095|0.105|
|e(1)|4.88|5.28|0.192|0.208|
|F|1.14|1.40|0.045|0.055|
|H(1)|6.10|6.71|0.240|0.264|
|J(1)|2.41|2.92|0.095|0.115|
|L|13.36|14.40|0.526|0.567|
|L(1)|3.33|4.04|0.131|0.159|
|Ø P|3.53|3.94|0.139|0.155|
|Q|2.54|3.00|0.100|0.118|
|ECN: E21-0621-Rev. D, 04-Nov-2021<br>DWG: 6031|||||
||||||



## **Note** 

- M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM 

Revison: 04-Nov-2021 

Document Number: 66542 

**1** 

For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

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## **Disclaimer** 

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Revision: 09-Jul-2021 

Document Number: 91000 

**1**