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IRLHS6376TRPBF
Dual MOSFET, N Channel, 30 V, 30 V, 3.6 A, 3.6 A, 0.048 ohm
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- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- Transistor Polarity:Dual N Channel; Continuous Drain Current Id:3.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.048ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage V
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: HEXFET Series
- Qualification: -
- Transistor Case Style: DFN2020
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.5W
- Power Dissipation P Channel: 1.5W
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 3.6A
- Continuous Drain Current Id P Channel: 3.6A
- Drain Source On State Resistance N Channel: 0.048ohm
- Drain Source On State Resistance P Channel: 0.048ohm
| Delivery and price | |
|---|---|
| Units per pack | 2000 |
| Price | 0.171 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## HEXFET Power MOSFET
|**VDS**|**30**|**V**|
|---|---|---|
|**VGS**|**±12**|**V**|
|**RDS(on) max**<br>(@VGS= 4.5V)|**63**|**m**Ω|
|**RDS(on) max**<br>(@VGS= 2.5V)|**82**|**m**Ω|
|**ID **<br>(@Tc(Bottom)= 25°C)|**3.4**<br>@|**A**|
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p2<br>2mm x 2mm Dual PQFN<br>**----- End of picture text -----**<br>
## **Applications**
## •
## •
## **Features and Benefits**
## **Resulting Benefits**
|**Features and Benefits**||**Resulting Benefits**|
|---|---|---|
|**Features**||**Resulting Benefits**|
|Low RDSon (≤63mΩ)||Lower Conduction Losses|
|Low Thermal Resistance to PCB (≤19°C/W)||Enable better thermal dissipation|
|Low Profile (≤1.0mm)|results in|Increased Power Density|
|Industry-Standard Pinout|⇒|Multi-Vendor Compatibility|
|Compatible with Existing Surface Mount Techniques||Easier Manufacturing|
|RoHS Compliant Containing no Lead, no Bromide and no Halogen||Environmentally Friendlier|
|**Orderable part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Note**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRLHS6376TRPBF|PQFN Dual 2mm x 2mm|Tape and Reel|4000||
|~~IRLHS6376TR2PBF~~|~~PQFN Dual 2mm x 2mm~~|~~Tape and Reel~~|~~400~~|EOL notice #259|
## **Absolute Maximum Ratings**
||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS<br>Drain-to-Source Volta<br>~~a~~|Drain-to-Source Voltage<br>~~a~~|30<br>~~a~~|V<br>~~a~~|
|VGS<br>Gate-to-Source Volta|Gate-to-Source Voltage|±12||
|ID@ TA= 25°C<br>Continuous Drain Current<br>~~a~~|Continuous Drain Current,VGS@ 4.5V<br>~~a~~|3.6<br>~~a~~|A<br>~~a~~<br>~~a~~<br>~~a~~|
|ID@ TA= 70°C<br>Continuous Drain Current<br>~~a~~<br>~~a~~|Continuous Drain Current,VGS@ 4.5V<br>~~a~~<br>~~a~~|2.9<br>~~a~~<br>~~a~~||
|ID@ TC(Bottom)= 25°C<br>Continuous Drain Current<br>~~a~~|Continuous Drain Current,VGS@ 4.5V<br>~~a~~|7.6<br>~~a~~||
|ID@ TC(Bottom)= 100°C<br>Continuous Drain Current<br>~~a~~<br>~~a~~<br>~~a~~|Continuous Drain Current,VGS@ 4.5V<br>~~a~~<br>~~a~~<br>~~a~~|4.9<br>~~a~~<br>~~a~~<br>~~a~~||
|ID@ TC(Bottom)= 25°C<br>Continuous Drain Current<br>~~a~~<br>~~a~~|Continuous Drain Current,VGS@ 4.5V(Package Limited)<br>~~a~~<br>~~a~~|3.4<br>~~a~~<br>||
|IDM<br>Pulsed Drain Current<br>~~a~~<br>~~a~~|Pulsed Drain Current<br>~~a~~<br>~~a~~|30<br>~~a~~<br>||
|PD@TA= 25°C<br>Power Dissipation<br>~~aee~~<br>~~a~~|Power Dissipation<br>~~aee~~<br>~~a~~|1.5<br>~~ee~~|W|
|PD@TC(Bottom)= 25°C<br>Power Dissipation<br>~~a~~<br>~~a~~|Power Dissipation<br>~~a~~<br>~~a~~|6.6||
|Linear Derating Factor<br>~~a~~<br>~~a~~|Linear Derating Factor<br>~~a~~<br>~~a~~|0.012|W/°C|
|Linear Derating Factor<br>TJ<br>Operating Junction and<br>TSTG<br>Stora<br>~~a~~|Linear Derating Factor<br>Operating Junction and<br>Storage Temperature Range<br>~~a~~|-55 to + 150|°C|
Notes O) through © are on page 2
������������
## **Static @ TJ = 25°C (unless otherwise specified)**
||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage|30|–––|–––|V|VGS= 0V,ID= 250µA|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient|–––|0.023|–––|V/°C|Reference to 25°C,ID= 1mA|
|RDS(on)|Static Drain-to-Source On-Resistance|–––|48|63|mΩ|VGS= 4.5V,ID= 3.4A��|
|||–––|61|82||VGS= 2.5V,ID= 3.4A��|
|VGS(th)|Gate Threshold Voltage|0.5|0.8|1.1|V|VDS= VGS, ID= 10µA|
|∆VGS(th)|Gate Threshold Voltage Coefficient|–––|-3.6|–––|mV/°C||
|IDSS|Drain-to-Source Leakage Current|–––|–––|1.0|µA|VDS= 24V,VGS= 0V|
|||–––|–––|150||VDS= 24V,VGS= 0V,TJ= 125°C|
|IGSS|Gate-to-Source Forward Leakage|–––|–––|100|nA|VGS= 12V|
||Gate-to-Source Reverse Leakage|–––|–––|-100||VGS= -12V|
|gfs|Forward Transconductance|8.8|–––|–––|S|VDS= 10V,ID= 3.4A�|
|Qg|Total Gate Charge�|–––|2.8|–––|nC|VDS= 15V<br>VGS= 4.5V<br>ID= 3.4A� (See Fig.17 & 18)|
|Qgs|Gate-to-Source Charge�|–––|0.13|–––|||
|Qgd|Gate-to-Drain Charge�|–––|1.1|–––|||
|RG|Gate Resistance|–––|4.6|–––|Ω||
|td(on)|Turn-On DelayTime|–––|4.4|–––|ns|See Fig.15<br>RG=1.8Ω<br>ID = 3.4A�<br>VDD= 10V, VGS= 4.5V|
|tr|Rise Time|–––|11|–––|||
|td(off)|Turn-Off DelayTime|–––|11|–––|||
|tf|Fall Time|–––|9.4|–––|||
|Ciss|Input Capacitance|–––|270|–––|pF|ƒ= 1.0MHz<br>VGS= 0V<br>VDS= 25V|
|Coss|Output Capacitance|–––|32|–––|||
|Crss|Reverse Transfer Capacitance|–––|20|–––|||
|**Diode Characteristics**|||||||
||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units**|**Conditions**|
|IS|Continuous Source Current<br>(Body Diode)|–––|–––|7.6�|A|S<br>D<br>G<br>MOSFET symbol<br>showing the<br>integral reverse<br>p-n junction diode.|
|ISM|Pulsed Source Current<br>(Body Diode)��|–––|–––|30|||
|VSD|<br>Diode Forward Voltage|–––|–––|1.2|V|TJ= 25°C, IS= 3.4A�, VGS= 0V�|
|trr|Reverse RecoveryTime|–––|8.0|12|ns|TJ= 25°C, IF= 3.4A�, VDD= 15V<br>di/dt = 260A/µs��|
|Qrr|Reverse RecoveryCharge|–––|5.9|8.9|nC||
|ton|Forward Turn-On Time|Time is dominated by parasitic Inductance|||||
## **Thermal Resistance**
|**Thermal Resistance**|||||
|---|---|---|---|---|
||**Parameter**|**Typ.**|**Max.**|**Units**|
|RθJC (Bottom)|Junction-to-Case�|–––|19|°C/W|
|RθJC (Top)|Junction-to-Case�|–––|175||
|RθJA|Junction-to-Ambient�|–––|86||
|RθJA (<10s)|Junction-to-Ambient�|–––|69||
## **������**
- Repetitive rating; pulse width limited by max. junction temperature.
- Current limited by package.
- Pulse width ≤ 400µs; duty cycle ≤ 2%.
- When mounted on 1 inch square copper board.
- Rθ is measured at TJ of approximately 90°C.
- For DESIGN AID ONLY, not subject to production testing.
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100<br>VGS<br>TOP 10V<br>4.5V<br>3.0V<br>2.5V<br>10 | | Lg“ 2.0V<br>1.8V<br>1.5V<br>BOTTOM 1.4V<br>1 Z e | |<br>Pain aaae<br>0.1 1.4V<br>≤60µs PULSE WIDTH<br>0.01 Pe _ Tj = 25°C ll<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1. Typical Output Characteristics<br>100<br>Es ee ee es ee<br>10 P | LATpA<br>T = 150°C<br>J<br>1 pfe e<br>T = 25°C<br>J<br>eeeeSS osee ee V ee DS = 15V esaee<br>0.1 | aa TT ≤60µs PULSE WIDTH<br>0.0 1.0 2.0 3.0 4.0 5.0<br>VGS, Gate-to-Source Voltage (V)<br>Fig 3. Typical Transfer Characteristics<br>10000<br>VGS = 0V, f = 1 MHZ<br>Ciss = C gs + Cgd, C ds SHORTED<br>| Crss = Cgd<br>C = C + C<br>oss ds gd<br>=<br>1000<br>H C EH<br>iss<br>0 ee<br>100 a Coss nnie<br>ee C<br>rss<br>S Ee eeERREee eee<br>a a<br>10 Pern ET<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>
**Fig 5.** Typical Capacitance vs.Drain-to-Source Voltage
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100<br>VGS<br>TOP 10V<br>4.5V<br>3.0V<br>2.5V<br>Pr 2.0V<br>1.8V<br>10 1.5V<br>BOTTOM 1.4V<br>OF F<br>1 U 7<br>1.4V<br>≤60µs PULSE WIDTH<br>0.1 aie Tj = 150°C<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2. Typical Output Characteristics<br>1.8<br>ID = 7.6A<br>1.6 VGS = 4.5V<br>1.4 LLYY|<br>1.2 L EELA<br>1.0 va<br>0.8 A Z|LLEL<br>A LLL EEL<br>0.6<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br> Normalized On-Resistance vs. Temperature<br>14.0<br>ID= 3.4A<br>12.0 P ELt LL<br>VDS= 24V<br>a |G<br>10.0 VDS= 15V [> Sf<br>VDS= 6.0V<br>8.0<br>hp<br>Y),<br>6.0<br>S an” e008<br>4.02.0 E2 IfAiyYW Zn |<br>0.0 rT tT} tt<br>0 1 2 3 4 5 6 7 8<br> QG, Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance (Normalized)<br>**----- End of picture text -----**<br>
**Fig 4.** Normalized On-Resistance vs. Temperature
**Fig 6.** Typical Gate Charge vs.Gate-to-Source Voltage
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**----- Start of picture text -----**<br>
100<br>re ee ee<br>pop<br>ee ee ee<br>10 a a<br>TJ = 150°C<br>ee ee Ae) ee<br>ee ee ee T ee = 25°C ee<br>J<br>1 p f fe<br>ee a<br>VGS = 0V<br>0.1 a ee<br>| tt<br>0.0 0.4 0.8 1.2 1.6<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>
**Fig 7.** Typical Source-Drain Diode Forward Voltage
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87 ee | |<br>Limited By Package<br>P|<br>6<br>5<br>p o [Z] y [s]<br>..<br>4 :<br>4 ~<br>3 tt |<br>2 PN<br>1<br>0<br>pot | Tt<br>25 50 75 100 125 150<br> TC , Case Temperature (°C)<br>ID, Drain Current (A)<br>**----- End of picture text -----**<br>
**Fig 9.** Maximum Drain Current vs. Case (Bottom) Temperature
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100<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>Se<br>e e<br>Pt TAL et PTs RG<br>100µsec<br>10 7 A 0 1msec<br>a re e h<br>Limited by 4 P at t 10msec ail<br>Wire Bond<br>1 pee<br>r ee wll<br>DC<br>Tc = 25°C Er s te<br>Tj = 150°C<br>Single Pulse<br>0.1 eeea Elleeail<br>0 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 8. Maximum Safe Operating Area<br>1.1<br>1.0 P Et ttt tt<br>0.9 P NP<br>0.8<br>SS<br>E RNE<br>E RRRNEREE<br>0.7<br>ID = 10µA<br>0.6 | Nea<br>0.5<br>- ANC<br>0.4<br>0.3<br>0.2<br>PTE EEE TTT<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>ID, Drain-to-Source Current (A)<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>
**Fig 10.** Threshold Voltage vs. Temperature
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100<br>PTW HE PEAR EE EE<br>10 D = 0.50<br>0.20<br>SS ee et el ee ee |<br>0.10<br>az mm | EHH oP dR FEAT<br>1 0.05<br>0.02<br>a 0.01<br>0.1 S R |<br>SINGLE PULSE Notes:<br>Za a ( THERMAL RESPONSE ) eeeeell 1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc iil<br>0.01<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>
**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
| www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
January 21, 2014
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140 |<br>ID = 3.4A<br>120<br>100<br>TJ = 125°C<br>80<br>60<br>T = 25°C<br>J<br>40<br>_ | eR<br>0 2 4 6 8 10 12<br>VGS, Gate -to -Source Voltage (V)<br>) Ω<br>RDS(on), Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>
**Fig 12.** On-Resistance vs. Gate Voltage
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**----- Start of picture text -----**<br>
50<br>ID<br>TOP 0.78A<br>40 1.6A<br>BOTTOM 3.4A<br>30<br>\<br>20<br>\<br>10 e SE><br>0<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>
**Fig 14.** Maximum Avalanche Energy vs. Drain Current
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300<br>250<br>200 VGS = 2.5V<br>150<br>100<br>VGS = 4.5V<br>50<br>0<br>0 5 10 15 20 25 30<br>ID, Drain Current (A)<br>)Ω<br>RDS(on), Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>
**Fig 13.** Typical On-Resistance vs. Drain Current
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**----- Start of picture text -----**<br>
400<br>300<br>200 h \|<br>IN<br>100<br>ih1 ae<br>0<br>1E-5 1E-4 1E-3 1E-2 1E-1 1E+0<br>Time (sec)<br>Single Pulse Power (W)<br>**----- End of picture text -----**<br>
**Fig 15.** Typical Power vs. Time
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+<br>) [©)] Circuit • Low SiLayoutIndConsiderations<br>•<br>- • owLeakage Inductance<br>+ Current Transformer<br>7<br>- a - ® +<br>00<br>•<br>Re • Driver same type as D.U.T. +<br>( a8 • vidt controlled byRg Vpp -<br>•<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
Driver Gate Drive<br>P.W.<br>{+ P.W. Period ——— + D = —— Period<br>) t V i GS=10<br>®@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current Current<br>JI" di/dt JN<br>1) D.U.T. VDS Waveform Diode Recoverydv/dt \ ny<br>VDD<br>Re-Applied<br>Voltage Body Diode Forward Drop iv<br>Inductor Curent<br>SO<br>Ripple ≤ 5% ISD<br>@<br>**----- End of picture text -----**<br>
or N-Channel
**Fig 16.** eak Diode HEXFET ®
ower MOSFETs Submit Datasheet Feedback
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**----- Start of picture text -----**<br>
L<br>VCC<br>DUT<br>0<br>1K S<br>**----- End of picture text -----**<br>
**Fig 17a.** Gate Charge Test Circuit
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**----- Start of picture text -----**<br>
15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>Ww IAS<br>g 20V Jt<br>tp 0.01Ω<br>**----- End of picture text -----**<br>
**Fig 18a.** Unclamped Inductive Test Circuit
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**----- Start of picture text -----**<br>
1<br> 0.1<br>**----- End of picture text -----**<br>
**Fig 19a.** Switching Time Test Circuit
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**----- Start of picture text -----**<br>
Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>
**Fig 17b.** Gate Charge Waveform
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V(BR)DSS<br>qe tp -><br>/<br>/ |<br>fi<br>IAS —<br>**----- End of picture text -----**<br>
**Fig 18b.** Unclamped Inductive Waveforms
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**----- Start of picture text -----**<br>
V<br>DS<br>90%<br>10%<br>V<br>GS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>
**Fig 19b.** Switching Time Waveforms
## **PQFN Dual 2x2 Outline Package Details**
## **PQFN Dual 2x2 Outline Part Marking**
**PQFN Dual 2x2 Outline Tape and Reel**
## **Qualification information**[†]
|**Qualification information**[†]|**Qualification information**[†]|**Qualification information**[†]|
|---|---|---|
|Qualification level|Industrial<br>(per JEDEC JES D47F<br>††guidelines )||
|Moisture Sensitivity Level|PQFN Dual 2mm x 2mm|MS L1<br>(per JEDEC J-S T D-020D<br>††)|
|RoHS compliant|Yes||
T Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Ho Applicable version of JEDEC standard at the time of product release.
|**Date**|**Comment**|
|---|---|
|1/20/2014|•Updated ordering information to reflect the End-Of-Life (EOL) of the mini-reel option (EOL notice #259).<br>•Updated data sheet with the new IR corporate template.<br>•Updated the qual level from Consumer to Industrial, on page 9.|
**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/
## **IMPORTANT NOTICE**
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ).
## **WARNINGS**
Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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