IRLHS6276TRPBF

## HEXFET Power MOSFET 

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|||||
|---|---|---|---|
|VDS|20|V|
|VGS|±12|V|
|R|
|DS(on) max|45|m|Ω|
|(@VGS = 4.5V)|
|R|
|DS(on) max|
|62|m|Ω|
|(@VGS = 2.5V)|
|ID|3.4|A|
|(@Tc(Bottom) = 25°C)|

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2mm x 2mm Dual PQFN<br>**----- End of picture text -----**<br>


## **Applications** 

## • 

## • 

## **Features and Benefits** 

## **Features** 

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|||
|---|---|
|Low RDSon|(≤ 45mΩ)|
|Low Thermal Resistance to PCB (≤ 19°C/W)|
|Low Profile (≤ 1.0mm)|results in|
|Industry-Standard Pinout|⇒|
|Compatible with Existing Surface Mount Techniques|
|RoHS Compliant Containing no Lead, no Bromide and no Halogen|

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## **Resulting Benefits** 

Lower Conduction Losses Enable better thermal dissipation Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier 

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|---|---|---|---|---|
|Orderable part number|Package Type|Standard Pack|Note|
|Form|Quantity|
|IRLHS6276TRPBF|PQFN Dual 2mm x 2mm|Tape and Reel|4000|
|IRLHS6276TR2PBF|PQFN Dual 2mm x 2mm|Tape and Reel|400|EOL notice #259|

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## **Absolute Maximum Ratings** 

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||||||
|---|---|---|---|---|
|Parameter|Max.|Units|
|VDS|Drain-to-Source Voltage|20|
|CO|V|
|VGS|Gate-to-Source Voltage|±12|
|a|
|ID @ TA = 25°C|a (”|Continuous Drain Current, VGS @ 4.5V|4.5|
|ID @ TA = 70°C|a (”|Continuous Drain Current, VGS @ 4.5V|3.6|
|ID @ TC(Bottom) = 25°C|(”|Continuous Drain Current, VGS @ 4.5V|9.6|
|a|A|
|ID @ TC(Bottom) = 100°C|a|Continuous Drain Current, VGS @ 4.5V|6.1|
|ID @ TC(Bottom) = 25°C|a|Continuous Drain Current, VGS @ 4.5V (Package Limited)|3.4|
|IDM|Pulsed Drain Current|40|
|PD @TA = 25°C|a|Power Dissipation|1.5|W|
|PD @TC(Bottom) = 25°C|Power Dissipation|6.6|
|a|
|aQO|Linear Derating Factor|0.012|W/°C|
|TJ|Operating Junction and|-55  to + 150|°C|
|TSTG|Storage Temperature Range|

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Notes O) through © are on page 2 

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## **Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage|20|–––|–––|V|VGS= 0V,ID= 250µA|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient|–––|9.3|–––|mV/°C|Reference to 25°C,ID= 1mA|
|RDS(on)|Static Drain-to-Source On-Resistance|–––|33|45|mΩ|VGS= 4.5V,ID= 3.4A��|
|||–––|46|62||VGS= 2.5V,ID= 3.4A��|
|VGS(th)|Gate Threshold Voltage|0.5|0.8|1.1|V|VDS= VGS, ID= 10µA|
|∆VGS(th)|Gate Threshold Voltage Coefficient|–––|-3.8|–––|mV/°C||
|IDSS|Drain-to-Source Leakage Current|–––|–––|1.0|µA|VDS= 16V,VGS= 0V|
|||–––|–––|150||VDS= 16V,VGS= 0V,TJ= 125°C|
|IGSS|Gate-to-Source Forward Leakage|–––|–––|100|nA|VGS= 12V|
||Gate-to-Source Reverse Leakage|–––|–––|-100||VGS= -12V|
|gfs|Forward Transconductance|8.8|–––|–––|S|VDS= 10V,ID= 3.4A�|
|Qg|Total Gate Charge�|–––|3.1|–––|nC|VDS= 10V<br>ID= 3.4A� (See Fig.17 & 18)<br>VGS= 4.5V|
|Qgs|Gate-to-Source Charge�|–––|0.22|–––|||
|Qgd|Gate-to-Drain Charge�|–––|1.3|–––|||
|RG|Gate Resistance|–––|4.0|–––|Ω||
|td(on)|Turn-On DelayTime|–––|4.4|–––|ns|VDD= 10V, VGS= 4.5V<br>RG=1.8Ω<br>ID = 3.4A�<br>See Fig.15|
|tr|Rise Time|–––|9.3|–––|||
|td(off)|Turn-Off DelayTime|–––|10|–––|||
|tf|Fall Time|–––|4.9|–––|||
|Ciss|Input Capacitance|–––|310|–––|pF|VGS= 0V<br>VDS= 10V<br>ƒ= 1.0MHz|
|Coss|Output Capacitance|–––|79|–––|||
|Crss|Reverse Transfer Capacitance|–––|49|–––|||
|**Diode Characteristics**|||||||
||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|IS|Continuous Source Current<br>(Body Diode)|–––|–––|9.6�|A|S<br>D<br>G<br>showing  the<br>integral reverse<br>p-n junction diode.<br>MOSFET symbol|
|ISM|<br>Pulsed Source Current<br>(Body Diode)��|–––|–––|40|||
|VSD|<br>Diode Forward Voltage|–––|–––|1.2|V|TJ= 25°C,IS= 3.4A�,VGS= 0V�<br>|
|trr|Reverse RecoveryTime|–––|5.2|7.8|ns|TJ= 25°C, IF= 3.4A�, VDD= 10V<br>di/dt = 126A/µs��|
|Qrr|Reverse RecoveryCharge|–––|5.0|7.5|nC||
|ton|Forward Turn-On Time|Time is dominated by parasitic Inductance|||||



## **Thermal Resistance** 

|**Thermal Resistance**|||||
|---|---|---|---|---|
||**Parameter**|**Typ.**|**Max.**|**Units**|
|RθJC (Bottom)|Junction-to-Case�|–––|19|°C/W|
|RθJC (Top)|Junction-to-Case�|–––|175||
|RθJA|Junction-to-Ambient�|–––|86||
|RθJA (<10s)|Junction-to-Ambient�|–––|69||



## **������** 

- Repetitive rating;  pulse width limited by max. junction temperature. 

- Current limited by package. 

- Pulse width ≤ 400µs; duty cycle ≤ 2%. 

- When mounted on 1 inch square copper board. 

- Rθ is measured at TJ of approximately 90°C. 

- For DESIGN AID ONLY, not subject to production testing. 

� ��������������������������������������������� ������������������������� ���������������������������������������� 

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100<br>VGS<br>TOP           10V<br>4.5V<br>3.0V<br>2.5V<br>10 | — — ——EEeEESoo 2.0V<br>1.8V<br>1.5V<br>BOTTOM 1.4V<br>1 P oe | |<br>ee rete<br>1.4V<br>0.1 p ee et TE ETI<br>Sa ee ee ee eeet<br>≤60µs PULSE WIDTH<br>P| TT Tj = 25°C<br>0.01 in _ anti<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>100<br>< Es ee ee=ee eee<br>10<br>T = 150°C<br>J<br>p e<br>1 T = 25°C<br>J<br>Se se ee ee<br>Ee 2 eee VDS = 10V |<br>≤60µs PULSE WIDTH<br>0.1<br>0.0 1.0 2.0 3.0 4.0 5.0<br>VGS, Gate-to-Source Voltage (V)<br>Fig 3.   Typical Transfer Characteristics<br>10000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = C gs + Cgd,  C ds SHORTED<br>| Crss    = Cgd<br>C = C + C<br>= oss   ds  gd<br>1000<br>rP E r<br>C<br>iss<br>E L Coss llteee<br>100 Crss est et<br>rT e esCE cE rree eel<br>a a<br>Pci<br>10<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs.Drain-to-Source Voltage 

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100<br>VGS<br>TOP           10V<br>4.5V<br>3.0V<br>2.5V<br>TTA, ——<br>WS 2.0V<br>1.8V<br>10 1.5V<br>BOTTOM 1.4V<br>| oo<br>1<br>Z e<br>1.4V<br>o e<br>aa<br>≤60µs PULSE WIDTH<br>Tj = 150°C<br>0.1 CUI LLL<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>1.6<br>ID = 3.4A<br>VGS = 4.5V<br>LLL/<br>1.4<br>1.2<br>y<br>1.0<br>0.8 xX<br>4<br>0.6<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>Fig 4.   Normalized On-Resistance vs. Temperature<br>14.0<br>ID= 3.4A<br>12.0 P o, ft<br>VDS= 16V<br>10.0 VDS= 10V =——//an<br>VDS= 4.0V<br>8.06.0 |7 ~/AGeW/LD/)// |<br>4.0 V/ :<br>2.0 |r WS F|) | |<br>0.0 | | |<br>0 2 4 6 8 10<br> QG,  Total Gate Charge (nC)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

**Fig 6.** Typical Gate Charge vs.Gate-to-Source Voltage 

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100<br>ee —_<br>ee ee ee ee<br>10<br>a Ae<br>TJ = 150°C<br>ey 4 ee<br>PR TJ = 25°C<br>1<br>p i [ff]<br>ee ee ee ee ee<br>VGS = 0V<br>0.1 | PPP ote |<br>0.0 0.4 0.8 1.2 1.6 2.0<br>VSD, Source-to-Drain Voltage (V)<br>  Typical Source-Drain Diode Forward Voltage<br>10<br>9<br>ee ee<br>Limited By Package<br>8<br>76 | | fl ss]<br>543 |pf x7 {| NA | S|<br>2 a’<br>1<br>0<br>25 50 75 100 125 150<br> TC , Case Temperature (°C)<br>ISD, Reverse Drain Current (A)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 9.** Maximum Drain Current vs. Case (Bottom) Temperature 

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100<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>vA<br>P A e t |Bll<br>10 Aa) ,|<br>100µsec<br>ee aan Ah dl<br>Limited by<br>Wire Bond 1msec<br>1 ns<br>ee |<br>10msec<br>Tc = 25°C s h HBG<br>Tj = 150°C<br>DC<br>Single Pulse<br>0.1 ==ll ee Bll ll<br>0 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 8.   Maximum Safe Operating Area<br>1.2 |<br>1.0<br>0.8 \<br>0.6 ID = 25µA IN \<br>0.4 \<br>0.2<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 10.** Threshold Voltage vs. Temperature 

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100<br>ee eee ee<br>10 e D = 0.50 erer TTT<br>0.20<br>r rr<br>0.10<br>| mm iT 6} ) FTTH TT<br>1 P t 0.05 Lo<br>0.02<br>ee 0.01<br>0.1 c s ee eeell<br>SINGLE PULSE Notes:<br>oa | | ttl ( THERMAL RESPONSE ) a ee eee 1. Duty Factor D = t1/t2 LU<br>| 2. Peak Tj = P dm x Zthjc + Tc il<br>0.01<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 

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100<br>ID = 3.4A<br>80<br>60 T J  = 125°C<br>40<br>T = 25°C<br>J<br>20 ER<br>0<br>0 2 4 6 8 10 12<br>VGS, Gate -to -Source Voltage  (V)<br>Fig 12.  On-Resistance vs. Gate Voltage<br>60<br>ID<br>TOP         0.89A<br>50<br>1.8A<br>BOTTOM 3.4A<br>40 \<br>30<br>20 eN<br>WN IAT LL<br>10<br>m s im IN :<br>|| PRESSi. —<br>0<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>) Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 14.** Maximum Avalanche Energy vs. Drain Current 

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250<br>200<br>VGS = 2.5V<br>150<br>100<br>VGS = 4.5V<br>50 P F T<br>0<br>t Tf<br>0 5 10 15 20 25 30<br>ID, Drain Current (A)<br>)Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On-Resistance vs. Drain Current 

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1000<br>800<br>600<br>\<br>400 \<br>200<br>Ssi<br>S TimpL<br>0<br>1E-5 1E-4 1E-3 1E-2 1E-1 1E+0<br>Time (sec)<br>Single Pulse Power (W)<br>**----- End of picture text -----**<br>


**Fig 15.** Typical Power vs. Time 

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Driver Gate Drive<br>P.W.<br>D.U.T + {+ P.W. Period ——— + D = —— Period<br>) [©)] Circuit    • Layout Considerations | t V i GS=10<br>•<br>— - •  GroundowLeakagePlaneInductance ®@ D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [1] Current Transformer - ® + Current r Current di/dt AN<br>00 1) D.U.T. VDS Waveform Diode Recoverydv/dt \ ny<br>VDD<br>•  Re-Applied<br>Re •  Driver same type as D.U.T. + Voltage Body Diode  Forward Drop iv<br>( a8 •  vidt controlled byRg Vpp - Inductor Curent<br>•<br>D.U.T. - Device Under Test SO<br>Ripple  ≤ 5% ISD<br>sp controlled byDuty Factor"D" @<br>**----- End of picture text -----**<br>


or N-Channel 

**Fig 16.** eak Diode HEXFET ® 

ower MOSFETs 

Submit Datasheet Feedback 

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L<br>VCC<br>DUT<br>0<br>1K S<br>**----- End of picture text -----**<br>


**Fig 17a.** Gate Charge Test Circuit 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>ww IAS<br>g 20V Jt<br>tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 18a.** Unclamped Inductive Test Circuit 

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 1<br> 0.1<br>**----- End of picture text -----**<br>


**Fig 19a.** Switching Time Test Circuit 

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Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 17b.** Gate Charge Waveform 

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V(BR)DSS<br>qe tp -><br>fi<br>IAS —<br>Fig 18b.<br>V<br>DS<br>90%<br>10% / /\<br>V<br>GS it it<br>o—' ey!<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Unclamped Inductive Waveforms 

**Fig 19b.** Switching Time Waveforms 

## **PQFN Dual 2x2 Outline Package Details** 

## **PQFN Dual 2x2 Outline  Part Marking** 

**PQFN Dual 2x2 Outline  Tape and Reel** 

## **Qualification information**[†] 

|**Qualification information**[†]|**Qualification information**[†]|**Qualification information**[†]|
|---|---|---|
|Qualification level|Industrial<br>(per JEDEC JES D47F<br>††guidelines )||
|Moisture Sensitivity Level|PQFN Dual 2mm x 2mm|MS L1<br>(per JEDEC J-S T D-020D<br>††)|
|RoHS compliant|Yes||



T Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Ho Applicable version of JEDEC standard at the time of product release. 

|**Date**|**Comment**|
|---|---|
|1/9/2014|•Updated ordering information to reflect the End-Of-Life (EOL) of the mini-reel option (EOL notice #259).<br>•Updated data sheet with the new IR corporate template.<br>•Updated the qualification level from Consumer to Industrial level.|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.