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IRLD110PBF

Power MOSFET, N Channel, 100 V, 1 A, 0.54 ohm, DIP, Through Hole

  • Manufacturer: VISHAY
  • Product type: Single MOSFETs
  • Transistor Polarity:N Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Power Dissipat
  • No. of Pins: 4Pins
  • Channel Type: N Channel
  • Product Range: -
  • Qualification: -
  • Power Dissipation: 1.3W
  • Transistor Mounting: Through Hole
  • Rds(on) Test Voltage: 5V
  • Transistor Case Style: DIP
  • Drain Source Voltage Vds: 100V
  • Operating Temperature Max: 175°C
  • Continuous Drain Current Id: 1A
  • Drain Source On State Resistance: 0.54ohm
  • Gate Source Threshold Voltage Max: 2V
Delivery and price
Units per pack 500
Price 0.738 €
Current stock 1000+
Lead time 7 days

Updated at March 14, 2026