Image not available
Illustrative purposes only
IRL6372PBF
Dual MOSFET, N Channel, 30 V, 8.1 A, 0.014 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- Transistor Polarity:Dual N Channel; Continuous Drain Current Id:8.1A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 2W
- Power Dissipation P Channel: -
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: -
- Continuous Drain Current Id N Channel: 8.1A
- Continuous Drain Current Id P Channel: -
- Drain Source On State Resistance N Channel: 0.014ohm
- Drain Source On State Resistance P Channel: -
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.239 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IRL6372PbF ## HEXFET ® Power MOSFET |**VDS**<br>~~a~~|**30**<br>~~a~~|**V**<br>~~a~~| |---|---|---| |**VGS**|**±12**|**V**| |**RDS(on) max**<br>(@VGS= 4.5V)|**17.9**|**m**Ω| |**Qg (typical)**|**11**|**nC**| |**g(yp)**<br>**ID**<br>(@TA= 25°C)|**8.1**|**A**| **==> picture [24 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> SO-8<br>**----- End of picture text -----**<br> ## **Applications** - - - ## **Features and Benefits** ## **Features** Industry-Standard SO-8 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification ⇒ ## **Resulting Benefits** Multi-Vendor Compatibility Environmentally Friendlier Increased Reliability |**Orderable part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Note**| |---|---|---|---|---| |||**Form**|**Quantity**|| |IRL6372PBF|SO-8|Tube/Bulk|**Quantity**<br>95|| |IRL6372TRPBF|SO-8|Tape and Reel|4000|| ## **Absolute Maximum Ratings** |**Absolute Maximum Ratings**|**Absolute Maximum Ratings**<br>**Parameter**|**Max.**|**Units**| |---|---|---|---| |VDS|Drain-to-Source Voltage<br>~~es~~|30<br>~~es~~|V| |VGS|Gate-to-Source Voltage<br>~~ee~~|±12<br>~~ee~~|| |ID@ TA= 25°C|Continuous Drain Current, VGS@ 4.5V<br>~~ee~~|8.1<br>~~ee~~|A| |ID@ TA= 70°C<br>~~a~~|Continuous Drain Current, VGS@ 4.5V<br>~~ee~~<br>~~a~~|6.5<br>~~ee~~|| |IDM<br>~~a~~<br>~~a~~|Pulsed Drain Current<br>~~a~~<br>~~a~~|65|| |PD@TA= 25°C<br>~~a~~<br>~~a~~<br>~~a~~|Power Dissipation<br>~~a~~<br>~~a~~<br>~~a~~|2.0<br>|W| |PD@TA= 70°C<br>~~a~~<br>~~a~~|Power Dissipation<br>~~a~~<br>~~a~~|1.3<br>|| |~~a~~|Linear Derating Factor<br>~~aee~~|0.02<br>~~ee~~|W/°C| |TJ<br>TSTG<br>|Operating Junction and<br>Storage Temperature Range<br>~~ee~~|-55 to + 150<br>~~ee~~|°C| > Notes ® through ) are on page 2 www.irf.com 1 01/17/2011 **Static @ TJ = 25°C (unless otherwise specified)** ||**Parameter**|**Min.**|**Typ.**|**Max.**<br>~~QO~~|**Units**<br>~~QO~~|**Conditions**<br>~~(OR~~| |---|---|---|---|---|---|---| |BVDSS|Drain-to-Source Breakdown Voltage<br>~~GN~~|30<br>~~GN~~<br>~~GD~~|–––<br>~~GN~~<br>~~PR~~|–––<br>~~GN~~<br>~~QO~~<br>~~ID~~|V<br>~~GN~~<br>~~QO~~<br>~~QO~~|VGS= 0V, ID= 250µA<br>~~GN~~<br>~~(OR~~<br>~~(OO~~| |∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~en~~|–––<br>~~en~~<br>~~GD~~|23<br>~~en~~<br>~~PR~~|–––<br>~~QO~~<br>~~en~~<br>~~ID~~|mV/°C<br>~~QO ~~<br>~~en~~<br>~~QO~~|Reference to 25°C, ID= 1mA<br> ~~(OR~~<br>~~en~~<br>~~(OO~~| |RDS(on)|Static Drain-to-Source On-Resistance<br>~~ee~~|–––<br>~~GD ~~<br>~~ee~~<br>~~ee~~|14.0<br> ~~PR~~<br>~~ee~~<br>~~ee~~|17.9<br>~~ID~~<br>~~ee~~<br>~~ee~~|mΩ<br>~~QO ~~<br>~~ee~~<br>~~ee~~|VGS= 4.5V, ID= 8.1A<br> ~~(OO~~<br>~~ee~~<br>~~®~~| |||–––<br>~~ee~~<br>~~ee~~|17.0<br>~~ee~~<br>~~ee~~|23.0<br>~~ee~~<br>~~ee~~||VGS= 2.5V, ID= 6.5A<br>~~ee~~<br>~~®~~| |VGS(th)|Gate Threshold Voltage<br>~~Sa~~|0.5<br>~~ee ~~<br>~~Sa~~|–––<br> ~~ee ~~|1.1<br> ~~ee~~|V<br>~~ee~~|VDS= VGS, ID= 10µA<br>~~®~~<br>~~EE~~| |∆VGS(th)|Gate Threshold Voltage Coefficient<br>~~DQ~~|–––<br>~~DQ~~<br>~~a~~|-4.0<br>~~DQ~~|–––<br>~~DQ~~<br>~~EE~~|mV/°C<br>~~DQ~~<br>~~EE~~|| |IDSS|Drain-to-Source Leakage Current<br>~~Ee~~|–––<br>~~Ee~~<br>~~a~~|–––<br>~~Ee~~<br>~~ee~~|1.0<br>~~Ee~~<br>~~EE~~|µA<br>~~Ee~~<br>~~EE~~|VDS= 24V, VGS= 0V<br>~~Ee~~<br>~~EE~~| |||–––<br>~~Ee~~<br>~~a~~|–––<br>~~Ee~~<br>~~ee~~|150<br>~~Ee~~<br>~~EE~~||VDS= 24V, VGS= 0V, TJ= 125°C<br>~~Ee~~<br>~~EE~~| |IGSS|Gate-to-Source Forward Leakage<br>~~Ee~~|–––<br>~~Ee~~<br>~~a~~|–––<br>~~Ee~~<br>~~ee~~|100<br>~~Ee~~<br>~~EE~~|nA<br>~~Ee~~<br>~~EE~~<br>~~QO~~|VGS= 12V<br>~~Ee~~<br>~~EE~~| ||Gate-to-Source Reverse Leakage<br>~~a~~|–––<br>~~a~~<br>~~Rs~~|–––<br>~~a~~<br>~~ID~~|-100<br>~~a~~<br>~~QO~~||VGS= -12V<br>~~(O~~| |gfs|Forward Transconductance<br>~~a~~<br>~~PD~~|30<br>~~a~~<br>~~PD~~<br>~~Rs~~|–––<br>~~a~~<br>~~PD~~<br>~~ID~~|–––<br>~~a~~<br>~~PD~~<br>~~QO~~|S<br>~~PD~~<br>~~QO~~|VDS= 10V, ID= 6.5A<br>~~PD~~<br>~~(O~~| |Qg|Total Gate Charge<br>~~es~~|–––<br>~~Rs ~~<br>~~es~~|11<br> ~~ID~~<br>~~es~~|–––<br>~~QO~~<br>~~es~~|nC<br>~~QO ~~<br>~~OO~~|VGS= 4.5V<br>VDS= 15V<br>ID= 6.5A<br> ~~(O~~<br>~~(OO~~| |Qgs1|Pre-Vth Gate-to-Source Charge<br>~~Qs~~|–––<br>~~Qs~~<br>~~(~~|0.01<br>~~Qs~~<br>~~(~~|–––<br>~~Qs~~||| |Qgs2|Post-Vth Gate-to-Source Charge<br>~~es~~|–––<br>~~es~~<br>~~(~~|0.50<br>~~es~~<br>~~(~~|–––<br>~~es~~||| |Qgd|Gate-to-Drain Charge<br>~~Qs~~|–––<br>~~(~~<br>~~Qs~~<br>~~(~~|4.8<br>~~(~~<br>~~Qs~~<br>~~(~~|–––<br>~~Qs~~||| |Qgodr|Gate Charge Overdrive<br>~~es~~|–––<br>~~es~~<br>~~(~~|5.69<br>~~es~~<br>~~(~~|–––<br>~~es~~||| |Qsw<br>~~a~~|Switch Charge(Qgs2+ Qgd)<br>~~Qs~~<br>~~a~~|–––<br>~~(~~<br>~~Qs~~<br>~~GON~~|5.3<br>~~(~~<br>~~Qs~~<br>~~GRD~~|–––<br>~~Qs~~<br>~~ID~~||| |RG<br>~~a~~|Gate Resistance<br>~~en~~<br>~~a~~|–––<br>~~en~~<br>~~GON~~|2.2<br>~~en~~<br>~~GRD~~|–––<br>~~en~~<br>~~ID~~|Ω<br>~~en~~<br>~~OO~~|~~en~~<br>~~(OO~~| |td(on)<br>~~a~~|Turn-On DelayTime<br>~~a~~|–––<br>~~GON~~|5.9<br>~~GRD~~|–––<br>~~ID~~|ns<br> ~~OO ~~|See Figs. 18<br>RG= 6.8Ω<br>VDD= 15V, VGS= 4.5V<br>ID= 6.5A<br> ~~(OO~~<br>@| |tr<br>~~a~~|Rise Time<br>~~a~~<br>~~Qs~~|–––<br>~~GON ~~<br>~~Qs~~<br>~~(~~|13<br> ~~GRD ~~<br>~~Qs~~<br>~~(~~|–––<br> ~~ID ~~<br>~~Qs~~||| |td(off)|Turn-Off DelayTime<br>~~es~~|–––<br>~~es~~<br>~~(~~|34<br>~~es~~<br>~~(~~|–––<br>~~es~~||| |tf|Fall Time<br>~~Qs~~|–––<br>~~(~~<br>~~Qs~~<br>~~(~~|15<br>~~(~~<br>~~Qs~~<br>~~(~~|–––<br>~~Qs~~||| |Ciss|Input Capacitance<br>~~es~~|–––<br>~~es~~<br>~~(~~|1020<br>~~es~~<br>~~(~~|–––<br>~~es~~|pF|ƒ= 1.0MHz<br>VGS= 0V<br>VDS= 25V| |Coss|Output Capacitance<br>~~Qs~~|–––<br>~~(~~<br>~~Qs~~|98<br>~~(~~<br>~~Qs~~|–––<br>~~Qs~~||| |Crss|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee~~|68<br>~~ee~~|–––<br>~~ee~~||| Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400µs; duty cycle ≤ 2%. When mounted on 1 ich square copper board. R θ is measured at TJ of approximately 90°C. www.irf.com 2 **==> picture [211 x 200] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>VGS<br>TOP 10V<br>4.5V<br>3.5V<br>2.5V<br>10 S LM Tr | 2.0V<br>1.8V<br>1.5V<br>BOTTOM 1.3V<br>1 C L | il<br>ema ≤ 60µs PULSE WIDTH<br>0.1 Tj = 25°C<br>1.3V<br>0.01 coatPenannies<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br> **Fig 1.** Typical Output Characteristics **==> picture [207 x 205] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>ee ee ee ee eee<br>T = 150°C<br>J<br>10 3a w / A tt<br>ey 0 ee ee ee eee<br>TJ = 25°C<br>1 v s a<br>2 ee ee ee<br>VDS = 15V<br>0.1 V_[iJie| ≤ 60µs PULSE WIDTH<br>1.0 1.5 2.0 2.5 3.0 3.5<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br> **Fig 3.** Typical Transfer Characteristics **==> picture [216 x 200] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>VGS = 0V, f = 1 MHZ<br>Ciss = C gs + Cgd, C ds SHORTED<br>C = C<br>rss gd<br>C = C + C<br>F - oss ds gd E<br>C<br>1000 — iss<br>So oo<br>Se Coss eeere<br>Crss<br>100 SOPSa PESA HEEEHHTIeea a!<br>10 aee ee ll<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br> **Fig 5.** Typical Capacitance vs.Drain-to-Source Voltage **==> picture [204 x 201] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>VGS<br>TOP 10V<br>4.5V<br>3.5V<br>2.5V<br>7 || 2.0V<br>1.8V<br>10 1.5V<br>BOTTOM 1.3V<br>Yo<br>1 a | |<br>1.3V<br>≤ 60µs PULSE WIDTH<br>0.1 aie Bn | Tj = 150°C eT<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br> **Fig 2.** Typical Output Characteristics **==> picture [215 x 425] intentionally omitted <==** **----- Start of picture text -----**<br> ID = 8.1A<br>1.6 VGS = 4.5V )<br>LLL<br>1.4 YA<br>1.2 L LYZ|<br>1.0 wa<br>0.8 T EE ELL<br>0.6<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>Fig 4. Normalized On-Resistance vs. Temperature<br>14.0<br>ID= 6.5A<br>12.0<br>VDS= 24V<br>a= VDS= 15V oy"<br>10.0<br>VDS= 6.0V<br>2<br>fo<br>8.0<br>6.0<br>a 4<br>4.0<br>2.00.0 |a—r ” y nyi 7 | y Ae| | | ff | if<br>0 5 10 15 20 25 30<br> QG, Total Gate Charge (nC)<br>RDS(on) , Drain-to-Source On Resistance (Normalized)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br> **Fig 4.** Normalized On-Resistance vs. Temperature **Fig 6.** Typical Gate Charge vs.Gate-to-Source Voltage www.irf.com 3 **==> picture [207 x 203] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>TJ = 150°C<br>T = 25°C<br>J<br>10<br>PP AP<br>VGS = 0V<br>1.0 Sieh ft |<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br> **==> picture [209 x 428] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100<br>1 00µ sec<br>1msec<br>10msec<br>10<br>DC<br>1 I C r S n<br>TA = 25°C<br>Tj = 150°C<br>Single Pulse<br>0.1 RHE FH<br>0.1 1.0 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 8. Maximum Safe Operating Area<br>1.4<br>1.2<br>P RT TT<br>FessSSeiilessSSeiil<br>1.0<br>ASSES<br>0.8<br>B ERSUE<NE<br>ID = 10µAD = 10µA = 10µA<br>0.6 ID = 250µAD = 250µA = 250µA PALNS<br>ID = 1.0mAD = 1.0mA = 1.0mA<br>0.4<br>CIN<br>0.2 PEL LELLEL LELL LELLL E LLINO<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br> **Fig 7.** Typical Source-Drain Diode Forward Voltage **==> picture [460 x 442] intentionally omitted <==** **----- Start of picture text -----**<br> 9 1.4<br>8<br>1.2<br>7<br>m I P RT<br>P P FessSSeiilessSSeiil<br>6 1.0<br>5 e s a ASSES<br>0.8<br>a B ERSUE<NE<br>4<br>ID = 10µAD = 10µA = 10µA<br>3 e e 0.6 ID = 250µAD = 250µA = 250µA<br>ID = 1.0mAD = 1.0mA = 1.0mA<br>2<br>0.4<br>1 t t<br>0 es 0.2 PEL LELLEL LELL LELLL E<br>25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100<br> TC , Case Temperature (°C) TJ , Temperature ( °C )<br>Fig 9. Maximum Drain Current vs.<br>Fig 10. Threshold Voltage vs. Temperature<br>Case (Bottom) Temperature<br>100<br>D = 0.50<br>10 0.20<br>0.10<br>0.05<br>0.02<br>1<br>0.01<br>0.1<br>0.01 Notes:<br>SINGLE PULSE<br>1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE )<br>2. Peak Tj = P dm x Zthja + TA<br>P e cm pail PETE HEP |<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>ID, Drain Current (A)<br>VGS(th), Gate threshold Voltage (V)<br>Thermal Response ( Z thJA ) °C/W<br>**----- End of picture text -----**<br> **Fig 10.** Threshold Voltage vs. Temperature **Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) www.irf.com 4 **==> picture [459 x 429] intentionally omitted <==** **----- Start of picture text -----**<br> 40 70<br>ID = 8.1A<br>35<br>60<br>30<br>50<br>Pee} | Ee<br>25 Vgs = 2.5V<br>TJ = 125°C 40<br>20<br>30<br>15 \eeanneen et] | VC<br>20 Vgs = 4.5V<br>10 T = 25°C<br>ianunaaaeee J | Ty t<br>CECE | aee<br>5 10<br>LL EEE SSELT I<br>1 2 3 4 5 6 7 8 9 10 11 12 0 10 20 30 40 50 60<br>ID, Drain Current (A)<br>VGS, Gate -to -Source Voltage (V)<br>Fig 12. On-Resistance vs. Gate Voltage Fig 13. Typical On-Resistance vs. Drain Current<br>250 25000<br>ID<br>TOP 1.2A<br>200 1.8A 20000<br>BOTTOM 6.5A<br>\ \<br>150 15000<br>N \ \<br>100 10000<br>50 5000<br>T BSee I LlICHUlICHUCHU<br>0 0<br>TS. its<br>25 50 75 100 125 150 1E-8 1E-7 1E-6 1E-5 1E-4<br>Starting TJ , Junction Temperature (°C) Time (sec)<br>) Ω<br>RDS(on), Drain-to -Source On Resistance (m<br>) Ω<br>RDS(on), Drain-to -Source On Resistance (m<br>EAS , Single Pulse Avalanche Energy (mJ)<br>Power (W)<br>**----- End of picture text -----**<br> **Fig 13.** Typical On-Resistance vs. Drain Current **==> picture [216 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> 25000<br>20000<br>\<br>15000<br>\<br>10000<br>5000<br>I LlICHUlICHUCHU<br>0<br>its<br>1E-8 1E-7 1E-6 1E-5 1E-4 1E-3<br>Time (sec)<br>Power (W)<br>**----- End of picture text -----**<br> **Fig 15.** Typical Power vs. Time **Fig 14.** Maximum Avalanche Energy vs. Drain Current **==> picture [414 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> Driver Gate Drive<br>P.W.<br>D.U.T + +——— P.W. Period — — D = —— Period<br>VGS=10<br>’ • |<br> •<br>Pp ©) - Circuit • GroundLowLayout Leakage PlaneConsiderationsInductance 2) D.U.T. ISD Waveform |<br>+<br>Reverse<br>Recovery Body Diode Forward<br>® - a = Current Transformer - ® + Current r Current = di/dt /<br>00 ® D.U.T. VDS Waveform Diode Recoverydv/dt \ —7<br>VDD<br>• Re-Applied<br>• + Voltage Body Diode Forward Drop<br>Ro ( 4 • widteontolled byRe out Vop - Inductor Curent re<br>•<br>D.U.T. - Device Under Test es ee<br>® Ripple ≤ 5% ISD<br>Iopcontoled [by][ Duty][ Factor "D"]<br>**----- End of picture text -----**<br> **Fig 16.** or N-Channel HEXFET ® ower MOSFETs www.irf.com 5 **==> picture [227 x 132] intentionally omitted <==** **----- Start of picture text -----**<br> L<br>VCC<br>DUT<br>0<br>1K S<br>nel<br>**----- End of picture text -----**<br> **Fig 17a.** Gate Charge Test Circuit **==> picture [150 x 99] intentionally omitted <==** **----- Start of picture text -----**<br> 15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>ve 20V<br>tp 0.01 Ω<br>**----- End of picture text -----**<br> **Fig 18a.** Unclamped Inductive Test Circuit **==> picture [10 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br> 0.1<br>**----- End of picture text -----**<br> **Fig 19a.** Switching Time Test Circuit **==> picture [202 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br> **Fig 17b.** Gate Charge Waveform **==> picture [152 x 314] intentionally omitted <==** **----- Start of picture text -----**<br> V(BR)DSS<br><e— tp —><br>/<br>/ |<br>/ |<br>IAS<br>Fig 18b.<br>V<br>DS<br>90% J<br>10%<br>V<br>GS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br> **Fig 18b.** Unclamped Inductive Waveforms **Fig 19b.** Switching Time Waveforms www.irf.com 6 Dimensions are shown in milimeters (inches) ## **SO-8 Part Marking Information** http://www.irf.com/package/ www.irf.com 7 ## **SO-8 Tape and Reel** **==> picture [204 x 320] intentionally omitted <==** **----- Start of picture text -----**<br> TERMINAL NUMBER 1<br>oO oO 6<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) _ FEED DIRECTION<br>| 330.00<br>(12.992)<br> MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br> NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. ## **Qualification information**[†] |**Qualification information**[†]||| |---|---|---| |Qualification level|Consumer<br>††<br>(per JEDEC JES D47F<br>†††guidelines)|| |Moisture Sensitivity Level|SO-8|MS L1<br>(per JEDEC J-S T D-020D<br>†††)| |RoHS compliant|Yes|| i http://www.irf.com/product-info/reliability ne Qualification standards can be found at International Rectifier’s web site - Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Hoo Applicable version of JEDEC standard at the time of product release. Data and specifications subject to change without notice. **IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 01/2011 www.irf.com 8
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →