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IRGS4610DPBF
IGBT, 16 A, 1.7 V, 77 W, 600 V, TO-263 (D2PAK), 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:16A; Collector Emitter Saturation Voltage Vce(on):1.7V; Power Dissipation Pd:77W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-263; No. of Pins:3
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 77W
- Transistor Mounting: Surface Mount
- Transistor Case Style: TO-263 (D2PAK)
- Operating Temperature Max: 175°C
- Continuous Collector Current: 16A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.7V
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.778 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
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C C<br>Cc<br>= VcES =600V Cc ‘@<br>E<br>t. c NS C<br>Ictsc >10A,SUS, TimaxTc == 100°C175°C G SG $.G Ne G<br>D-Pak<br>E D [2] -Pak<br>VcE(on)typ. = 1.7V@6A n-channel IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF TO-220AB<br>G C E<br>Gate Collector Emitter<br>**----- End of picture text -----**<br>
- Appliance Drives
- Inverters
- UPS
|**G**<br>**C**<br>**E**<br>Gate<br>Collector<br>Emitter<br>• Appliance Drives<br>• Inverters<br>• UPS|**G**<br>**C**<br>**E**<br>Gate<br>Collector<br>Emitter<br>• Appliance Drives<br>• Inverters<br>• UPS|
|---|---|
|**Features**<br>**Benefits**<br>→||
|Low VCE(ON)and switchinglosses|Highefficiencyinawiderange ofapplications and switchingfrequencies|
|Square RBSOA and maximum junction temperature 175°C|Improved reliability due to rugged hard switching performance and higher<br>powercapability|
|Positive VCE(ON)temperature coefficient and tighter distribution of<br>parameters|Excellent current sharing in parallel operation|
|5μs short circuit SOA|Enables short circuit protection scheme|
|Lead-free,RoHS compliant|Environmentallyfriendly|
|**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRGR4610DPbF|D-PAK|Tube|75|IRGR4610DPbF|
|||Tape and Reel|2000|IRGR4610DTRPbF|
|||Tape and Reel Right|3000|IRGR4610DTRRPbF|
|||Tape and Reel Left|3000|IRGR4610DTRLPbF|
|IRGS4610DPbF|D<br>2PAK|Tube|50|IRGS4610DPbF|
|||Tape and Reel Right|800|IRGS4610DTRRPbF|
|||Tape and Reel Left|800|IRGS4610DTRLPbF|
|IRGB4610DPbF|TO-220AB|Tube|50|IRGB4610DPbF|
## **Absolute Maximum Ratings**
|~~A~~|**Parameter**<br>|**Max.**<br>|**Units**<br>|
|---|---|---|---|
|VCES<br>~~se~~|Collector-to-Emitter Breakdown Voltage<br>~~se~~|600<br>~~se~~|V<br>~~se~~|
|IC@ TC= 25°C<br>~~se~~<br>~~GO~~|Continuous Collector Current<br>~~se~~<br>~~GO~~|16<br>~~se~~<br>~~GO~~|A<br>~~se~~<br>~~|_|~~|
|IC@ TC= 100°C<br>~~sO~~|Continuous Collector Current<br>~~sO~~|10<br>~~sO~~||
|ICM<br>~~a~~|Pulsed Collector Current,VGE= 15V<br>~~a~~|18<br>~~a~~||
|ILM<br>~~©~~|Clamped Inductive Load Current,VGE= 20V<br>~~©~~|24<br>~~©~~||
|IF@ TC= 25°C<br>~~sO~~|Diode Continuous Forward Current<br>~~sO~~|10<br>~~sO~~||
|IF@ TC=100°C<br>~~Ge~~|Diode Continuous Forward Current<br>~~Ge~~|6<br>~~Ge~~||
|IFM<br>~~rH~~|Diode Maximum Forward Current<br>~~rH~~|24<br>~~rH~~||
|VGE<br>~~Re~~<br>~~rH~~|Continuous Gate-to-Emitter Voltage<br>~~Re~~<br>~~rH~~|± 20<br>~~Re~~<br>~~rH~~|V<br>~~|_|~~|
||Transient Gate-to-Emitter Voltage<br>~~rH~~|± 30<br>~~rH~~||
|PD@ TC=25°<br>~~rH~~<br>~~Ge~~|Maximum Power Dissipation<br>~~rH~~<br>~~Ge~~|77<br>~~rH~~<br>~~Ge~~|W<br>~~|_|~~<br>~~eee~~|
|PD@ TC=100°<br>~~fe~~<br>~~ee~~|Maximum Power Dissipation<br>~~fe~~<br>~~ee~~|39<br>~~fe~~<br>~~eee~~||
|TJ<br>TSTG<br>~~fe~~<br>~~ee~~|Operating Junction and<br>Storage Temperature Range<br>~~fe~~<br>~~ee~~|-40 to + 175<br>~~fe~~<br>~~eee~~|°C<br>~~eee~~|
|~~ee~~|SolderingTemperature,for 10 seconds (1.6mm fromcase)<br>~~ee~~|300<br>~~eee~~||
|~~ee~~<br>~~A~~|MountingTorque, 6-32or M3 Screw TO-220<br>~~ee ~~|10lbf. In(1.1 N.m)<br> ~~eee~~||
## ����������������
## **Thermal Resistance**
||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|---|
|RθJC|Thermal Resistance, Junction-to-Case -(IGBT)�|–––|–––|1.9|°C/W|
|RθJC|Thermal Resistance, Junction-to-Case -(Diode)�|–––|–––|6.3||
|RθCS|Thermal Resistance,Case-to-Sink(flat, greased surface) (TO-220)|–––|0.5|–––||
|RθJA|Thermal Resistance, Junction-to-Ambient (PCB mount) (D-PAK)�|–––|–––|50||
||Thermal Resistance, Junction-to-Ambient (D-PAK)|–––|–––|110||
||Thermal Resistance, Junction-to-Ambient (PCB mount, Steady State)<br>(D<br>2PAK)�|–––|–––|40||
||Thermal Resistance, Junction-to-Ambient ( Socket mount) (TO-220)|–––|–––|62||
## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**
||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units **|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)CES|Collector-to-Emitter Breakdown Voltage|600|—|—|V|VGE= 0V,Ic=100μA�|
|ΔV(BR)CES/ΔTJ|Temperature Coeff. of Breakdown Voltage|—|0.36|—|V/°C|VGE=0V,Ic= 250μA(25-175<br>oC )|
|VCE(on)|Collector-to-Emitter Saturation Voltage|—|1.7|2.0|V|IC= 6.0A,VGE= 15V,TJ= 25°C|
|||—|2.07|—||IC= 6.0A,VGE= 15V,TJ= 150°C|
|||—|2.14|—||IC= 6.0A,VGE= 15V,TJ= 175°C|
|VGE(th)|Gate Threshold Voltage|4.0|—|6.5|V|VCE= VGE,IC= 150μA|
|ΔVGE(th)/ΔTJ|Threshold Voltage temp. coefficient|—|-13|—|mV/°C|VCE= VGE,IC= 250μA(25-175<br>oC )|
|gfe|Forward Transconductance|—|5.8|—|S|VCE= 25V,IC= 6.0A,PW =80μS|
|ICES|Collector-to-Emitter Leakage Current|—|—|25|μA|VGE= 0V,VCE= 600V|
|||—|—|250||VGE= 0V,VCE= 600V,TJ=175°C|
|VFM|Diode Forward Voltage Drop|—|1.60|2.30|V|IF= 6.0A|
|||—|1.30|—||IF= 6.0A,TJ= 175°C|
|IGES|Gate-to-Emitter Leakage Current|—|—|±100|nA|VGE= ± 20 V|
Notes:
- VCC = 80% (VCES), VGE = 20V, L = 1.0mH, RG = 100 Ω.
- R θ is measured at TJ approximately 90°C �
- Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
- Pulse width limited by max. junction temperature.
- Values influenced by parasitic L and C in measurement
- When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
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## **Switching Characteristics @ TJ = 25°C (unless otherwise specified)**
||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|Qg|Total Gate Charge(turn-on)|—|13|—|nC|IC= 6.0A<br>VCC= 400V<br>VGE= 15V|
|Qge|Gate-to-Emitter Charge(turn-on)|—|3.0|—|||
|Qgc|Gate-to-Collector Charge(turn-on)|—|6.4|—|||
|Eon|Turn-On SwitchingLoss|—|56|—|μJ|IC= 6.0A, VCC= 400V, VGE= 15V<br>RG= 47Ω, L=1mH, LS= 150nH, TJ= 25°C<br>Energylosses include tail and diode reverse recovery|
|Eoff|Turn-Off SwitchingLoss|—|122|—|||
|Etotal|Total SwitchingLoss|—|178|—|||
|td(on)|Turn-On delaytime|—|27|—|<br>ns|IC= 6.0A, VCC= 400V<br>RG= 47Ω, L=1mH, LS= 150nH<br>TJ= 25°C�|
|tr|Rise time|—|11|—|||
|td(off)|Turn-Off delaytime|—|75|—|||
|tf|Fall time|—|17|—|||
|Eon|Turn-On SwitchingLoss|—|140|—|<br>μJ|IC= 6.0A, VCC= 400V, VGE= 15V<br>RG= 47Ω, L=1mH, LS= 150nH, TJ= 175°C<br>Energylosses include tail and diode reverse recovery|
|Eoff|Turn-Off SwitchingLoss|—|189|—|||
|Etotal|Total SwitchingLoss|—|329|—|||
|td(on)|Turn-On delaytime|—|26|—|<br>ns|IC= 6.0A, VCC= 400V<br>RG= 47Ω, L=1mH, LS= 150nH<br>TJ= 175°C�|
|tr|Rise time|—|12|—|||
|td(off)|Turn-Off delaytime|—|95|—|||
|tf|Fall time|—|32|—|||
|Cies|Input Capacitance|—|350|—|pF|VGE= 0V<br>VCC= 30V<br>f = 1Mhz|
|Coes|Output Capacitance|—|29|—|||
|Cres|Reverse Transfer Capacitance|—|10|—|||
|RBSOA|Reverse Bias Safe Operating Area|FULL SQUARE||||TJ= 175°C, IC= 24A<br>VCC= 500V, Vp =600V<br>RG= 100Ω,VGE= +20V to 0V|
|SCSOA|Short Circuit Safe Operating Area|5|—|—|μs|VCC= 400V, Vp =600V<br>RG= 100Ω,VGE= +15V to 0V|
|Erec|Reverse recoveryenergyof the diode|—|178|—|μJ|TJ= 175~~o~~C<br>VCC= 400V, IF= 6.0A<br>VGE= 15V,Rg= 47Ω,L=1mH,LS=150nH|
|trr|Diode Reverse recoverytime|—|74|—|ns||
|Irr|Peak Reverse RecoveryCurrent|—|12|—|A||
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1816 Pot | tl<br>14 Sa<br>12 TST<br>10 Pot IN<br>8<br>Pet ft KA<br>6 P| | | KX<br>4 Po NT<br>2 eea ee<br>0<br>25 50 75 100 125 150 175<br> TC (°C)<br>IC (A)<br>**----- End of picture text -----**<br>
**Fig. 1** - Maximum DC Collector Current vs. Case Temperature
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100<br>10 a Sih el 10μsec<br>100μsec<br>Sa Sree<br>DC<br>1<br>Tc = 25°C<br>Tj = 175°C Si Sst<br>Single Pulse<br>0.1 Sa<br>1 10 100 1000<br>VCE (V)<br>IC (A)<br>**----- End of picture text -----**<br>
**Fig. 3** - Forward SOA, TC = 25°C, TJ ≤ 175°C, VGE = 15V
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20<br>15 PoZan Top VGE = 18V<br>V = 15V<br>GE<br>VGE = 12V<br>V = 10V<br>GE<br>Bae Bottom VGE = 8.0V<br>10<br>5<br>pao<br>0 TES[$—————_—_—<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>
**Fig. 5** - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80μs
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80<br>7060 NEPNINTEEt<br>50 Nee<br>40<br>eae<br>30<br>.<br>20<br>aw<br>10 Pet | ot EN<br>0 aN<br>25 50 75 100 125 150 175<br> TC (°C)<br>Fig. 2 - Power Dissipation vs. Case<br>Temperature<br>100<br>10<br>||<br>Sect<br>1 Ser Sec<br>0 Saal asaaiili<br>10 100 1000<br>VCE (V)<br>Fig. 4 - Reverse Bias SOA<br>TJ = 175°C, VGE = 20V<br>Ptot (W)<br>IC A)<br>**----- End of picture text -----**<br>
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20<br>{fit Sa<br>15 | Top V ft GE = 18V<br>V = 15V<br>GE<br>VGE = 12V<br>V = 10V<br>GE<br>10 WA Bottom V GE = 8.0V<br>5<br>An<br>0 EEEAT [ | | |<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>
**Fig. 6** - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80μs
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20<br>Top VGE = 18V<br>V = 15V<br>GE<br>VGE = 12V<br>V = 10V<br>GE<br>15 Bottom V GE = 8.0V<br>Th]<br>fan<br>10<br>pay<br>5<br>poo<br>0 FA<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>
**Fig. 7** - Typ. IGBT Output Characteristics TJ = 175°C; tp = 80μs
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10<br>8 ain<br>6 I CE = 3.0A<br>fh ICE = 6.0A<br>4 I CE = 12A<br>2 mia<br>0<br>5 10 15 20<br> VGE (V)<br>Fig. 9 - Typical VCE vs. VGE<br>TJ = -40°C<br>10<br>8<br>Tt]<br>ICE = 3.0A<br>6 tt I CE = 6.0A<br>ICE = 12A<br>4 et<br>2<br>mies<br>0 | fT TT<br>5 10 15 20<br> VGE (V)<br>VCE (V)<br>VCE (V)<br>**----- End of picture text -----**<br>
**Fig. 11** - Typical VCE vs. VGE TJ = 175°C
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20<br>18<br>16<br>-40°C<br>14 ESE 25°C<br>175°C<br>12<br>SSi<br>10<br>8<br>6<br>Fe<br>4<br>2<br>0 a) Am<br>0.0 1.0 2.0 3.0<br> VF (V)<br>IF (A)<br>**----- End of picture text -----**<br>
**Fig. 8** - Typ. Diode Forward Characteristics tp = 80μs
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10 tt<br>8<br>6 I CE = 3.0A<br>ot ICE = 6.0A<br>4 I CE = 12A<br>RE<br>2<br>0<br>5 10 15 20<br> VGE (V)<br>Fig. 10 - Typical VCE vs. VGE<br>TJ = 25°C<br>20<br>18<br>TJ = 25°C<br>16 T J = 175°C<br>oS<br>14<br>12 s/n<br>10<br>8 oe on<br>6<br>4<br>asec<br>2<br>0<br>an<br>4 6 8 10 12 14 16<br> VGE, Gate-to-Emitter Voltage (V)<br>VCE (V)<br>IC, Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br>
**Fig. 12** - Typ. Transfer Characteristics VCE = 50V; tp = 10μs
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400<br>350 PT TA<br>300<br>e/a<br>250<br>Of<br>200 EOFF<br>150 ca aae<br>100 | EON<br>50 44 HER<br>0 2 4 6 8 10 12 14<br>IC (A)<br>Energy (μJ)<br>**----- End of picture text -----**<br>
**Fig. 13** - Typ. Energy Loss vs. IC
TJ = 175°C; L = 1mH; VCE = 400V, RG = 47 Ω ; VGE = 15V.
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220<br>200<br>EOFF<br>180<br>Se]<br>160<br>Lf<br>140 E ON<br>120 ef<br>TP<br>100<br>80 / |<br>a<br>60<br>0 25 50 75 100 125<br>Rg ( Ω )<br>Fig. 15 - Typ. Energy Loss vs. RG<br> = 175°C; L = 1mH; VCE = 400V, ICE = 6.0A; VCE = 400V, ICE = 6.0A; V= 400V, ICE = 6.0A; VCE = 6.0A; V= 6.0A; VGE = 15V<br>3025 Pf fot fd<br>RG = 10 Ω<br>20 Pp<br>15 R G = 22 Ω<br>10 R G = 47 Ω<br>Ae<br>5 Ser R G = 100 Ω<br>|TT ft<br>0 ff ft<br>2 4 6 8 10 12 14<br>IF (A)<br>IRR (A)<br>Energy (μJ)<br>**----- End of picture text -----**<br>
TJ = 175°C; L = 1mH; VCE = 400V, ICE = 6.0A; VCE = 400V, ICE = 6.0A; V= 400V, ICE = 6.0A; VCE = 6.0A; V= 6.0A; VGE = 15V
**Fig. 17** - Typical Diode IRR vs. IF TJ = 175°C
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1000 SS<br>td OFF<br>Se<br>100<br>SS] t F<br>tdON<br>10<br>SS<br>tR<br>Pre<br>1 eteeeELee ee<br>2 4 6 8 10 12 14<br>IC (A)<br>Swiching Time (ns)<br>**----- End of picture text -----**<br>
**Fig. 14** - Typ. Switching Time vs. IC TJ = 175°C; L=1mH; VCE= 400V RG= 47 Ω ; VGE= 15V
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1000<br>tdOFF<br>FLL<br>100<br>—— tF<br>tdON<br>Se<br>10 a ae<br>tR<br>FR<br>1 es ee<br>0 25 50 75 100 125<br>RG ( Ω )<br>Fig. 16 - Typ. Switching Time vs. RG<br>TJ = 175°C; L=1mH; VCE= 400V<br>ICE= 6.0A; VGE= 15V<br>22<br>20<br>Ff | | ft<br>18<br>NESE<br>16<br>14<br>12<br>= ERE 10<br>NE<br>8<br>6 PfttER<br>0 25 50 75 100 125<br>RG ( Ω)<br>Swiching Time (ns)<br>IRR (A)<br>**----- End of picture text -----**<br>
**Fig. 18** - Typical Diode IRR vs. RG TJ = 175°C; IF = 6.0A
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20 1200<br>18<br>TTT. IA CTT<br>1000<br>12A<br>16<br>10 Ω<br>HAH 1 22 Ω<br>800<br>14<br> 47 Ω<br>ys ae<br>12 TIA 600 (Ll 6.0A<br>10 100 Ω<br>yr an<br>400<br>8 3.0A<br>6 4Pree. 200 TL<br>0 200 400 600 800 1000 1200 0 500 1000 1500<br>diF /dt (A/μs) diF /dt (A/μs)<br>Fig. 19 - Typical Diode IRR vs. diF/dt Fig. 20 - Typical Diode QRR<br>VCC= 400V; VGE= 15V; VCC= 400V; VGE= 15V; TJ = 175°C<br>ICE= 6.0A; TJ = 175°C<br>350 20 50<br>300<br>To RG = 10 Ω 15 = Tsc f 40<br>250 Isc<br>RG = 22 Ω<br>200 HERS 10 NS 30<br>pet SL<br>RG = 47 Ω<br>150<br>Uae RG = 100 Ω 5 ene 20<br>100<br>50 AT,“LTT |] [| 0 24nnn| 10<br>2 4 6 8 10 12 14 8 10 12 14 16 18<br>IF (A) VGE (V)<br>Fig. 21 - Typical Diode ERR vs. IF Fig. 22 - Typ. VGE vs. Short Circuit Time<br>TJ = 175°C VCC=400V, TC =25°C<br>1000 16<br>Cies<br>14 VCES = 400V<br>=a - VCES = 300V +<br>12<br>100<br>Saaa5 10 annie<br>8<br>Coes<br>6<br>10<br>Sonne Ge e 4 annee<br>Cres<br>2<br>1 es ee 0 Anni<br>0 100 200 300 400 500 0 2 4 6 8 10 12 14<br>VCE (V) Q G, Total Gate Charge (nC)<br>IRR (A)<br>Energy (μJ)<br>VGE, Gate-to-Emitter Voltage (V)<br>QRR (nC)<br>Time (μs)<br>Capacitance (pF)<br>Current (A)<br>**----- End of picture text -----**<br>
**Fig. 23** - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
**Fig. 24** - Typical Gate Charge vs. VGE ICE = 6.0A, L=600μH
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10<br>a a ee a a a | eee<br>1 D = 0.50<br>0.20<br>ee<br>0.1 ct 0.100.02 0.05 0.01 Cor τ J τ J τ 1 τ 1 R 1 R1 PF τ 2 τ R 22 R2 R τ 3 3 R τ 3 3 τ R4 TTT τ 4R 4 4 τ C τ || Ri 00.7262 0.0000760.7721 0.000810.(0°C/W415 ) 0 τ .i 000005(sec)<br>es ieee Tt 7 > =<br>Pt er} Ci= Ci τ i / Ri i / Ri EY=H 0.4016 0.004929<br>0.01 ai SINGLE PULSE 0 eee eee ereet<br>( THERMAL RESPONSE )<br>Notes:<br>a a ee ee ee ee ee ee ee ee ee eee maaan<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>FEHR0 F EEE EE pH ll<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)<br>10<br>ne<br>D = 0.50<br>me eer<br>0 . 20 atmrEeeeek tT LTT<br>1 A<br>0.10<br>Ss a a a ce eee ee ee ee cel<br>———e 0 .0 5 rT | | gO A R 1R1 R 2R2 R 3R3 R 4R 4 Ri ( ° C/W) τ i (sec)<br>0.1 Ptp—ealSeer 0.02 0.01 ATIee τ J τ peppy J τ 1 Ci τ 1= τ i / Ri τ 2 τ 2 τ 3 τ 3 τ 4 τ 4 τ C τ a—____} 0.2195 0.0000231.7733 0.000165 2.9352 0.0014931.3704 0.013255 ||<br>Aa ee eeOO”,a eeOOOee eee Ci i / Ri eeseee<br>PT Notes: a ee ee i<br>SINGLE PULSE 1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc<br>A A 0 ee ee<br>0.01 th ull EE cull<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>
**Fig. 26.** Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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L<br>VCC<br>DUT<br>0<br>1K<br>**----- End of picture text -----**<br>
**Fig.C.T.1** - Gate Charge Circuit (turn-off)
**Fig.C.T.3** - S.C.SOA Circuit
**Fig.C.T.5** - Resistive Load Circuit
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L<br>80 V + DUT<br>- 480V<br>Rg<br>**----- End of picture text -----**<br>
**Fig.C.T.2** - RBSOA Circuit
**Fig.C.T.4** - Switching Loss Circuit
**Fig.C.T.6** - Typical Filter Circuit for V Measurement (BR)CES
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600 12<br>500 10<br>400 8<br>tf<br>300 6<br>{oT<br>90% ICE<br>200 4<br>5% ICE<br>100 ne 2<br>5% VCE<br>0 0<br>Eoff Loss<br>-100 -2<br>-0.2 0 0.2 0.4 0.6 0.8 1<br>time(μs)<br> (V)<br>CE<br>V<br>**----- End of picture text -----**<br>
**Fig. WF1** - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4
**==> picture [212 x 247] intentionally omitted <==**
**----- Start of picture text -----**<br>
100 15<br>0 Q RR 10<br>tRR<br>-100 5<br>-200 0<br>ipsam 10%<br>Peak<br>-300 Peak -5<br>IRR<br>IRR<br>TW<br>-400 -10<br>-500 -15<br>-600 et -20<br>-0.05 0.05 0.15 0.25<br>time (μS)<br> (V)<br>F<br>V<br>**----- End of picture text -----**<br>
WF.3- Typ. Diode Recovery Waveform @ TJ = 175°C using CT.4
**==> picture [207 x 254] intentionally omitted <==**
**----- Start of picture text -----**<br>
600 30<br>500 tr 25<br>TEST<br>CURRENT<br>400 20<br>90% test<br>300 15<br>ano current<br>200 10<br>10% test<br>current<br>100 5<br>a a 5% VCE<br>0 0<br>Eon Loss<br>-100 -5<br>4.3 4.5 4.7<br>time (μs)<br> (V)<br>CE<br>V<br>**----- End of picture text -----**<br>
**Fig. WF2** - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4
**==> picture [210 x 248] intentionally omitted <==**
**----- Start of picture text -----**<br>
500 80<br>450 VCE 70<br>400 60<br>350 50<br>300 40<br>250 i 30<br>ICE<br>200 20<br>150 + > 10<br>100 0<br>50 -10<br>0 —I -20<br>-2 -1 0 1 2 3 4 5 6 7 8<br>Time (uS)<br>Vce (V)<br>**----- End of picture text -----**<br>
WF.4- Typ. Short Circuit Waveform @ TJ = 25°C using CT.3
EXAMPLE: THIS IS AN IRFR120 PART NUMBER WITH ASSEMBLY INTERNATIONAL c ~~S~~ LOT CODE 1234 RECTIFIER IRFU120 DATE CODE ASSEMBLED ON WW 16, 1999 LOGO 916A YEAR 9 = 1999 IN THE ASSEMBLY LINE "A" 12 34 WEEK 16 LINE A ASSEMBLY LOT CODE
**==> picture [494 x 122] intentionally omitted <==**
**----- Start of picture text -----**<br>
TR TRR TRL<br>SOOO OO : oo O ©<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>**----- End of picture text -----**<br>
NOTES :
## 1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
**==> picture [373 x 223] intentionally omitted <==**
**----- Start of picture text -----**<br>
13 INCH<br>Z O or G)<br>16 mm<br>NOTES :<br>**----- End of picture text -----**<br>
1. OUTLINE CONFORMS TO EIA-481.
THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L"
**==> picture [262 x 221] intentionally omitted <==**
**----- Start of picture text -----**<br>
PART NUMBER<br>INTERNATIONAL<br>YN<br>RECTIFIER F530S<br>LOGO<br>I¢aR 002.<br>DATE CODE<br>80 24<br>YEAR 0 = 2000<br>ASSEMBLY<br>LOT CODE VY b e WEEK 02<br>u u LINE L<br>PART NUMBER<br>INTERNATIONAL<br>S S<br>RECTIFIER F530S<br>LOGO I¢eaR P002 A DATE CODE<br>P = DESIGNATES LEAD - FREE<br>80 24<br>PRODUCT (OPTIONAL)<br>ASSEMBLY P u<br>LOT CODE Tent YEAR 0 = 2000<br>L L WEEK 02<br>A = ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>
## OR
## Dimensions are shown in millimeters (inches))
## TRR
1.60 (.063) 1.50 (.059) 1.60 (.063) 4.10 (.161) 1.50 (.059) 3.90 (.153) 0.368 (.0145) 0.342 (.0135) ~~4 lal :~~ FEED DIRECTION ________* 1.85 (.073) ~~ooo~~ 6 4/S ~~ol~~ 11.60 (.457) - i} ee 1.65 (.065) ~~|~~ 11.40 (.449) 24.30 (.957) 15.42 (.609) 23.90 (.941) 15.22 (.601) TRL o aos J 1.75 (.069) 10.90 (.429) 1.25 (.049) 10.70 (.421) 4.72 (.136) ~~=~~ 16.10 (.634) | ~~r~~ 4.52 (.178) 15.90 (.626)
## FEED DIRECTION
**==> picture [387 x 205] intentionally omitted <==**
**----- Start of picture text -----**<br>
13.50 (.532) 27.40 (1.079)<br>7) 12.80 (.504) 23.90 (.941) a ie<br>4<br>330.00 60.00 (2.362)<br>(14.173) aN g MIN.<br> MAX.<br>30.40 (1.197)<br> MAX.<br>26.40 (1.039 7 ) F 4<br>24.40 (.961)<br>3<br>**----- End of picture text -----**<br>
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
**==> picture [348 x 73] intentionally omitted <==**
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EXAMPLE: THIS IS AN IRF1010<br>LOT CODE 1789 INTERNATIONAL PART NUMBER<br>ASSEMBLED ON WW 19, 2000 RECTIFIER I RF 1010<br>IN THE ASSEMBLY LINE "C" LOGO IR 019C<br>17 39 DATE CODE<br>YEAR 0 = 2000<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead - Free" LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>
TO-220AB packages are not recommended for Surface Mount Application.
## **Qualification Information[† ]**
|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F)††||
|**Moisture Sensitivity Level**|D-Pak|MSL1|
||D<br>2Pak||
||TO-220|N/A|
|**RoHS Compliant**|Yes||
- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release
|**Revision History**|**Revision History**|
|---|---|
|**Date**<br>~~a~~|**Comments**|
|11/14/2014|•Added note<br>IFMDiode Maximum Forward Current on page 1.<br>•Removed note<br>switching losses test condition on page 3.<br>• Updated package outline on page 15.<br>®|
**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/
Updated at June 9, 2026
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