Image not available
Illustrative purposes only
IRGPS60B120KDP
IGBT, 105 A, 2.75 V, 595 W, 1.2 kV, TO-247AA, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Product Range: IRGP
- Power Dissipation: 595W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247AA
- Operating Temperature Max: 150°C
- Continuous Collector Current: 105A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 2.75V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 7.73 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IRGPS60B120KDP ## INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE ## Motor Control Co-Pack IGBT **==> picture [192 x 95] intentionally omitted <==** **----- Start of picture text -----**<br> ||| |---|---| |C| |VCES = 1200V| |VCE(on) typ. = 2.50V| |G| |@ VGE = 15V,| |E| |N-channel|ICE = 60A, Tj=25°C| **----- End of picture text -----**<br> ## **Features** - Low VCE (on) Non Punch Through IGBT Technology. - Low Diode VF. - 10µs Short Circuit Capability. - Square RBSOA. - Ultrasoft Diode Reverse Recovery Characteristics. - Positive VCE (on) Temperature Coefficient. - Super-247 Package. - Lead-Free ## **Benefits** - Benchmark Efficiency for Motor Control. - Rugged Transient Performance. - Low EMI. - Significantly Less Snubber Required - Excellent Current Sharing in Parallel Operation. **Super** - **247™** **Absolute Maximum Ratings** **==> picture [432 x 283] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||||| |---|---|---|---|---|---|---|---| |SO|Parameter|Max.|Units| |VCES|Collector-to-Emitter Voltage|1200|V| |pe|IC @ TC = 25°C|Continuous Collector Current|105| |IC @ TC = 100°C|Continuous Collector Current|60| |>|ICM|—#_t_o—|Pulsed Collector Current|240|A| |OI|ILM|Clamped Inductive Load Current|240| |a|IF @ TC = 25°C|Diode Continuous Forward Current|——|yt|120| |es|IF @ TC = 100°C|a|Diode Continuous Forward Current|60| |es|IFM|QO|Diode Maximum Forward Current|240| |—————|VGE|Gate-to-Emitter Voltage|± 20|;|V| |a|PD @ TC = 25°C|=|Maximum Power Dissipation|ee|—#_—|595|ee| |PD @ TC = 100°C|Maximum Power Dissipation|238| |TJ|Operating Junction and|-55 to +150| |St|TSTG|Storage Temperature Range|°C| |Soldering Temperature, for 10 sec.|300 (0.063 in. (1.6mm) from case)| |pf| |Thermal Resistance| |Parameter|Min.|Typ.|Max.|Units| |RθJC|Junction-to-Case - IGBT|–––|–––|0.20| |RθJC|Junction-to-Case - Diode|–––|–––|0.41|°C/W| |RθCS|Case-to-Sink, flat, greased surface|–––|0.24|–––| |RθJA|Junction-to-Ambient, typical socket mount|–––|–––|40| |–––|–––| |Recommended Clip Force|20 (2)|N(kgf)| |Wt|Weight|–––|6.0 (0.21)|–––|g|(oz)| |Le|Internal Emitter Inductance (5mm from package)|–––|13|–––|nH| **----- End of picture text -----**<br> www.irf.com 1 9/22/04 ## IRGPS60B120KDP |Rs||ts<br>|es<br>|es<br>|||| |---|---|---|---|---|---|---|---| |**Parameter**<br>aes<br>Rs|**Parameter**<br>es<br>|**Min. **<br>es<br>ts<br>|**Typ. **<br>es<br>es<br>|**Max.**<br>es<br>es<br>|**Units**<br>es<br>|**Conditions**<br>es<br>|**Ref.Fig.**<br>es| |V(BR)CES<br>Rs**GC**<br>Rs|Collector-to-Emitter Breakdown Voltage<br>**GC**|1200<br>ts<br>**GC**|–––<br>es<br>**GC**|–––<br>es<br>**GC**|V<br>**GC**|VGE= 0V, IC= 500µA<br>**GC**|| |∆V(BR)CES/∆TJ<br>Rs**GC**<br>Rs|Temperature Coeff. of Breakdown Voltage<br>**GC**|–––<br>ts <br>**GC**|0.40<br> es <br>**GC**|–––<br> es<br>**GC**|V/°C<br>**GC**|VGE= 0V, IC= 1.0mA, (25°C-125°C)<br>**GC**|| |VCE(on)<br>**GC**<br>Rs<br>Rs|Collector-to-Emitter Saturation Voltage<br>**GC**<br>|–––<br>**GC**<br>Pt|2.33<br>**GC**<br>Pt|2.50<br>**GC**<br>Pt|V<br>**GC**<br>|IC= 50A<br>VGE= 15V<br>IC= 60A<br>IC= 50A, TJ= 125°C<br>IC= 60A, TJ= 125°C<br>**GC**<br>|5, 6<br>7, 9<br>10<br>11<br>| |||–––<br>PT|2.50<br>PT|2.75<br>PT|||| |||–––<br>PT|2.79<br>PT|3.1<br>PT|||| |||–––<br>Pt<br>|3.04<br>Pt<br>|3.5<br>Pt<br>|||| |VGE(th)<br>RsGC<br>es|Gate Threshold Voltage<br>GC|4.0<br>Pt<br>GC|5.0<br>Pt<br>GC<br>**G**O|6.0<br>Pt<br>GC<br>O|GC<br>GOD|VCE= VGE, IC= 250µA<br>GC<br>GO|9,10<br>11 ,12<br>GC<br>GO<br>GO| |∆VGE(th)/∆TJ<br>Rs<br>GO<br>es|Temperature Coeff. of Threshold Voltage <br><br>GO<br>GO|–––<br>Pt<br><br>GO<br>GO|-12<br>Pt<br><br>GO<br>**G**O<br>O|––– <br>Pt<br><br>GO<br>O<br>GO|mV/°C<br><br>GO<br>GOD<br>GO|VCE= VGE, IC= 1.0mA, (25°C-125°C)<br><br>GO<br>GO|| |gfe<br>es|Forward Transconductance<br>GO|–––<br>GO<br>cee|34.4<br>**G**O<br>O<br>cee|–––<br>O<br>GO<br>|S<br>GOD<br>GO<br>**e**|VCE= 50V, IC= 60A, PW=80µs<br>GO<br>**e**ee|GO| |ICES<br>es<br>ee|Zero Gate Voltage Collector Current<br>GO<br>ee|–––<br>GO<br>ee<br>cee<br>aee|–––<br>**G**O<br>O<br>ee<br>cee<br>ee|500<br>O <br>GO<br>ee<br><br>ee|µA<br> GOD<br>GO<br>ee<br>**e**<br>e<br>|VGE= 0V, VCE= 1200V<br>GO<br>ee<br>**e**ee|GO<br>ee<br>Ps| |||–––<br>ee<br>cee<br>aee<br>a|650<br>ee<br>cee<br>ee<br>ee|1350<br>ee<br><br>ee<br>ee||VGE= 0V, VCE= 1200V, TJ= 125°C<br>ee<br>**e**ee<br>Ps|| |VFM<br>a|Diode Forward Voltage Drop<br>|–––<br>cee<br>aee<br>a|1.82<br>cee <br>ee<br>ee|2.10<br> <br>ee<br>ee|V<br> **e**<br>e<br> <br> <br>|IC= 50A<br>**e**ee<br>Ps|8<br>Ps<br>|| |||–––<br>a<br>a|1.93<br>ee <br>|2.20<br> ee <br>||IC= 60A<br> Ps<br>|| |||–––<br>PT|1.96<br>PT|2.20<br>PT||IC= 50A, TJ= 125°C<br>||| |||–––<br>PT<br>a<br><br>GO|2.13<br>PT<br><br>GO|2.40<br>PT <br>||IC= 60A, TJ= 125°C<br> |<br>||<br>es| |IGES<br>aes|Gate-to-Emitter Leakage Current<br>es|–––<br>a<br>es<br>GO|–––<br>es<br>GO|±100<br>es|nA<br>es|VGE= ±20V<br>es|| |**Switching Characteristics @ TJ = 25°C (unless otherwise specified)**<br>a<br>a<br>GO<br>RsRO<br>GOGO<br>es|||||||| |**Parameter**<br>Rs<br>es|**Parameter**<br>RO|**Min.**<br>RO|**Typ. **<br>RO<br>GO|**Max.**<br>RO<br>|**Units**<br>RO<br>GO|**Conditions**<br>RO<br>GO|**Ref.Fig.**| |Qg<br>Rs<br>es<br>ee|Total Gate Charge (turn-on)<br>RO|–––<br>RO|340<br>RO<br>GO|510<br>RO<br>|nC<br>RO<br> GO|IC= 60A<br>VCC= 600V<br>VGE= 15V<br>RO<br>GO|23<br>CT1| |Qge<br>es<br>ee<br>es|Gate - Emitter Charge (turn-on)|–––|40<br>GO|60<br>|||| |Qgc<br>ee<br>es<br>es|Gate - Collector Charge (turn-on)|–––|165|248|||| |gc<br>Eon<br>es<br>es|Turn-On Switching Loss|–––|3214|4870|µJ|IC= 60A, VCC= 600V<br>VGE= 15V,RG= 4.7Ω,L =200µH<br>Ls = 150nH<br>TJ= 25°C<br>TJ= 125°C<br>Energy losses include "tail" and<br>diode reverse recovery.|CT4<br>WF1<br>WF2<br>13,15| |Eoff<br>es<br>I<br>es|Turn-Off Switching Loss|–––|4783|5450|||| |Etot<br>es<br>ee|Total Switching Loss<br>ee|–––<br>ee<br>ee|8000 <br>ee|10320<br>ee|||| |Eon<br>es<br>ee|Turn-On Switching Loss<br>ee|–––<br>ee<br>ee|5032 <br>ee|6890<br>ee|µJ||| |Eoff<br>ee<br>ee<br>es|Turn-Off Switching Loss<br>ee<br>ee|–––<br>ee<br>ee<br>ee|7457 <br>ee<br>ee|8385<br>ee<br>ee|||| |Etot<br>es<br>es|Total Switching Loss<br>eG|––– <br>eG|12500 15275<br>eG|12500 15275<br>eG|||| |td(on)<br>es<br>es<br>es|Turn-On Delay Time<br>eG|–––<br>eG|72<br>eG|94<br>eG|ns|IC= 15A, VCC= 600V<br>VGE= 15V, RG= 4.7ΩL =200µH<br>Ls = 150nH, TJ= 125°C|14, 16<br>CT4<br>WF1<br>WF2| |tr<br>es<br>es<br>es|Rise Time<br>eG<br>RG|–––<br>eG<br>RG|32<br>eG<br>RG|45<br>eG<br>RG|||| |td(off)<br>es<br>es|Turn-Off Delay Time<br>RG|–––<br>RG|366<br>RG|400<br>RG|||| |tf<br>es<br>Rs|Fall Time<br>RG|–––<br>RG|45<br>RG|58<br>RG|||| |Cies<br>Rs<br>es|Input Capacitance|–––|4300|–––|pF|VGE= 0V<br>VCC= 30V<br>f = 1.0MHz|22| |Coes<br>Rs<br>es<br>es|Output Capacitance|–––|395|–––|||| |Cres<br>es<br>es|Reverse Transfer Capacitance|–––|160|–––|||| |RBSOA<br>es|Reverse Bias Safe Operting Area|FULL SQUARE||||TJ= 150°C, IC= 240A, Vp =1200V<br>VCC= 1000V, VGE= +15V to 0V<br>RG= 4.7Ω|4<br>CT2| |SCSOA<br>es|Short Circuit Safe Operting Area|10<br>ee|–––|–––|µs|TJ= 150°C, Vp =1200V<br>VCC= 900V, VGE= +15V to 0V,<br>RG= 4.7Ω|CT3<br>WF4| |Erec<br>aes|Reverse Recovery energy of the diode<br>es|–––<br>es<br>ee|3346<br>es|–––<br>es|µJ<br>es|TJ= 125°C<br>VCC= 600V, IF= 60A, L =200µH<br>VGE= 15V,RG= 4.7Ω,Ls = 150nH|17,18,19<br>20, 21<br>CT4,WF3| |trr<br>Diode Reverse Recovery time<br>I||–––<br>ee<br>I<br>ee|180<br>I<br>es|–––<br>I|ns<br>I||| |Irr<br>Diode Peak Reverse Recovery Current<br>es||–––<br>es<br>ee|50<br>es<br>es|–––<br>es|A<br>es||| www.irf.com 2 ## IRGPS60B120KDP **==> picture [440 x 480] intentionally omitted <==** **----- Start of picture text -----**<br> 140 700<br>LIMITED BY PACKAGE<br>12010080 pitELPSE eeT| 600500<br>60 P TL [LN] N | E| | 400300<br>40 P te; NE<br>200<br>20<br>P P ENG 100<br>E ERE<br>0<br>0<br>0 20 40 60 80 100 120 140 160<br>0 50 100 150 200<br> TC (°C)<br>TC (°C)<br>Fig. 1 - Maximum DC Collector Current vs. Fig. 2 - Power Dissipation vs. Case<br>Case Temperature © Temperature<br>1000 1000<br>100 P AKAKCLM NAN 2 µs ee<br>F S S 10 µs 100 E T|<br>NNRNTE Ss ee eT Ge<br>10 NAAN 100 µs FLEE TE<br>p f [|] E|<br>—— DC —o en ee |<br>1ms<br>10<br>1 10ms<br>0.1<br>ee 1 a a ll<br>1 10 100 1000 10000<br>10 100 1000 10000<br> VCE (V)<br>VCE (V)<br>IC A)<br>IC (A) P tot (W)<br>IC (A)<br>**----- End of picture text -----**<br> **Fig. 3** - Forward SOA TC = 25°C; TJS ≤ 150°C **Fig. 4** - Reverse Bias SOA TJ = 150°C; VGE =15V www.irf.com 3 ## IRGPS60B120KDP **==> picture [433 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> 120 120<br>VGE = 18V VGE = 18V<br>100 VGE = 15V 100 VGE = 15V<br>VGE = 12V VGE = 12V<br>80 VGE = 10V Wa 80 FO VGE = 10V IE<br>VGE = 8.0V VGE = 8.0V<br>60 60<br>40 K R 40<br>20 20<br>C TfN| Of GS<br>0 0<br>0 eee 1 2 3 4 5 ee 0 1 2 3 4 5<br> VCE (V) VCE (V)<br>ICE (A) ICE (A)<br>**----- End of picture text -----**<br> **Fig. 5** - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs **Fig. 6** - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs **==> picture [197 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>V = 18V<br>GE<br>100 VGE = 15V<br>VGE = 12V<br>80 T VGE = 10V O<br>VGE = 8.0V<br>NY/Z<br>60<br>40<br>20<br>f =<br>A S}<br>0<br>0 1 2 3 4 5<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br> **==> picture [196 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>-40°C<br>100 25°C<br>125°C<br>80 F OF<br>NA<br>60<br>40<br>20<br>[ Lf<br>0 L F<br>0 1 2 3<br> VF (V)<br>IF (A)<br>**----- End of picture text -----**<br> **Fig. 7** - Typ. IGBT Output Characteristics TJ = 125°C; tp = 80µs **Fig. 8** - Typ. Diode Forward Characteristics tp = 80µs www.irf.com 4 ## IRGPS60B120KDP **==> picture [198 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>1816 Te TTe 1 TT<br>14<br>1210 o| e IICECE = 30A= 60A<br>8 ICE = 120A<br>m n. ee<br>6<br>4<br>20 nes es S<br>5 10 15 20<br> VGE (V)<br>VCE (V)<br>**----- End of picture text -----**<br> **==> picture [199 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>1816 ae eeeeee<br>14<br>1210 H| | t IICECE = 30A= 60A e e<br>8 ICE = 120A<br>m e es<br>6<br>4<br>20 Pee AR ee<br>5 10 15 20<br> VGE (V)<br>VCE (V)<br>**----- End of picture text -----**<br> **Fig. 9** - Typical VCE vs. VGE TJ = -40°C **Fig. 10** - Typical VCE vs. VGE TJ = 25°C **==> picture [433 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> 20 500<br>18 e ee 450 P | TJ = 25°C Ti<br>16 400 TJ = 125°C<br>ee 350<br>14 a ee | ff<br>12 a nal ICE = 30A 300 a ee ee<br>ICE = 60A 250<br>a D en a ee ae<br>10 Stee ICE = 120A 200 a Ae<br>8<br>m ee 150 e e A<br>6 100 TJ = 125°C<br>42 PF|a |TTL ij) ——— 500 aAa X24 TJ = 25°C<br>5 10 15 20 0 5 10 15 20<br> VGE (V) VGE (V)<br>VCE (V) ICE (A)<br>**----- End of picture text -----**<br> **Fig. 11** - Typical VCE vs. VGE TJ = 125°C **Fig. 12** - Typ. Transfer Characteristics VCE = 50V; tp = 10µs www.irf.com 5 ## IRGPS60B120KDP **==> picture [433 x 451] intentionally omitted <==** **----- Start of picture text -----**<br> 1200010000 To o], 1000 S tdOFF e<br>8000<br>t y) [ e S<br>E<br>OFF<br>6000 Sy // 100 ee tdON e<br>4000 EON tF<br>2000 tR<br>0 po Ep<br>10<br>0 20 40 60 80 100<br>20 40 60 80 100<br> IC (A)<br>IC (A)<br>Fig. 13 - Typ. Energy Loss vs. IC Fig. 14 - Typ. Switching Time vs. IC<br>TJ = 125°C; L=200µH; VCE= 600V TJ = 125°C; L=200µH; VCE= 600V<br>RG= 4.7Ω; VGE= 15V RG= 4.7Ω; VGE= 15V<br>25000 10000<br>tdOFF<br>20000<br>EON<br>1000<br>TA ) LS<br>15000<br>E tdON<br>OFF<br>10000 ZA ) 7 tR<br>100 tF<br>50000 Zoee ) 10 ee<br>Energy (µJ)<br>Swiching Time (ns)<br>Swiching Time (ns)<br>Energy (µJ)<br>**----- End of picture text -----**<br> **==> picture [179 x 23] intentionally omitted <==** **----- Start of picture text -----**<br> 0 50 100 150<br>RG (Ω)<br>**----- End of picture text -----**<br> **==> picture [180 x 24] intentionally omitted <==** **----- Start of picture text -----**<br> 0 50 100 150<br>RG (Ω)<br>**----- End of picture text -----**<br> **Fig. 15** - Typ. Energy Loss vs. RG TJ = 125°C; L=200µH; VCE= 600V ICE= 60A; VGE= 15V **Fig. 16** - Typ. Switching Time vs. RG TJ = 125°C; L=200µH; VCE= 600V ICE= 60A; VGE= 15V www.irf.com 6 ## IRGPS60B120KDP **==> picture [438 x 203] intentionally omitted <==** **----- Start of picture text -----**<br> 70 60<br>RG = 4.7Ω<br>60<br>T T T TT] 6 50<br>e e L I<br>50<br>40<br>40 to RG =22 t Ω e} e e<br>30<br>i [ Py<br>30 RG =47 Ω<br>20<br>20 — RG =100 Ω mH] L = R<br>10 lT e ee}ee a ee ee 10 b eeotee<br>0 0<br>0 20 40 60 80 100 0 50 100 150<br>IF (A) RG (Ω)<br>IRR (A) IRR (A)<br>**----- End of picture text -----**<br> **Fig. 17** - Typical Diode IRR vs. IF TJ = 125°C **Fig. 18** - Typical Diode IRR vs. RG TJ = 125°C; IF = 60A **==> picture [214 x 202] intentionally omitted <==** **----- Start of picture text -----**<br> 60<br>RG = 4.7Ω<br>50<br>sae<br>40<br>RG =22 Ω<br>30<br>RG =47 Ω<br>4<br>20 ee<br>RG =100 Ω<br>10<br>Pf<br>0<br>0 500 1000 1500<br>diF /dt (A/µs)<br>IRR (A)<br>**----- End of picture text -----**<br> **==> picture [203 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 12<br>4.7Ω<br>11 90A<br>10 22Ω<br>60A<br>9 w 47 Ω e<br>8<br>7<br> 100Ω<br>6<br>30A<br>5 ee<br>4<br>3 e e<br>e e<br>2 ee<br>0 500 1000 1500<br>diF /dt (A/µs)<br>QRR (µC)<br>**----- End of picture text -----**<br> **Fig. 19** - Typical Diode IRR vs. diF/dt VCC= 600V; VGE= 15V; ICE= 60A; TJ = 125°C **Fig. 20** - Typical Diode QRR VCC= 600V; VGE= 15V;TJ = 125°C www.irf.com 7 ## IRGPS60B120KDP **==> picture [212 x 197] intentionally omitted <==** **----- Start of picture text -----**<br> 40003500 | ||Le|fr<br>3000 | iT|<br>2500 4.7Ω ZLH+ CE<br>22Ω<br>A | |<br>2000<br>47Ω TT<br>1500<br>100Ω<br>1000 f T<br>5000 PF fffFfT<br>0 20 40 60 80 100<br>IF (A)<br>Energy (µJ)<br>**----- End of picture text -----**<br> **Fig. 21** - Typical Diode ERR vs. IF TJ = 125°C **==> picture [213 x 197] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>Cies<br>es ee ee es ee<br>1000<br>Coes<br>——<br>Cres<br>100 ee<br>— —————<br>ee ee ee eee ee<br>10 ee<br>0 20 40 60 80 100<br>VCE (V)<br>Capacitance (pF)<br>**----- End of picture text -----**<br> **==> picture [201 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>14<br>600V<br>12 f7 800V<br>10<br>8 fT<br>6<br>H Y TT Tt tT<br>4<br>y i | | tt tt<br>2<br>p et} | ty<br>0<br>0 Pi 50 [itiji] 100 150 200 250 300 | 350 400<br>Q G, Total Gate Charge (nC)<br>VGE (V)<br>**----- End of picture text -----**<br> **Fig. 22** - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz **Fig. 23** - Typical Gate Charge vs. VGE ICE = 60A; L = 600µH www.irf.com 8 ## IRGPS60B120KDP **==> picture [436 x 204] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>Ee se ee ee ee ee ee ee ee eee ee ee<br>e A OO SOee eeOOee ee0 esOOQe QeeOe OO Or Oe0QOQO QOOOOOO SR QeOOOO OOO<br>1 e e<br>D = 0.50 Seeee<br>p orn FTee eee eee<br>a a ee<br>0.20<br>0.10<br>0.1 PC eeE rr|rr eeTiti| PTH| LTH|<br>= 0.05 =S5:--- a eS SS SS SS ee seer<br>0.01<br>|__ oe0 OO Oe eeOO eee Notes: 0 eeee ee e ee<br>= 0.02 CTT SINGLE PULSE 0 sO 1. Duty Factor D = t1/t2 meen<br>( THERMAL RESPONSE )<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.01<br>1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br> **Fig 24.** Normalized Transient Thermal Impedance, Junction-to-Case (IGBT) **==> picture [435 x 204] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>a ee ee ee ee ee ee ee ee ee ee<br>AsEe eeOOee ee0 8 QO ee eeOOee eeROOee Qe Oe Oe Oe Oe Oe0QQ OOOOOOO OR QQOOOOO<br>1 S D = 0.50 SS SSSaa Seeeee a eee eee e e<br>R oo” rrr<br>a aega<br>0.20<br>TTI<br>0.1 p 0.10 ae— ooer ||<br>0.05 ceee<br>cles 0.01 Notes: a<br>0 ee OO 0 meee<br>0.02 SINGLE PULSE 1. Duty Factor D = t1/t2<br>= t e e e 2 ee ee ee<br>2. Peak Tj = P dm x Zthjc + Tc<br>( THERMAL RESPONSE )<br>0.01<br>1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br> **Fig 25.** Normalized Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 9 ## IRGPS60B120KDP **==> picture [415 x 88] intentionally omitted <==** **----- Start of picture text -----**<br> L<br>L<br>VCC<br>80 V<br>DUT DUT<br>0 1000V<br>1K Rg<br>**----- End of picture text -----**<br> **Fig.C.T.1** - Gate Charge Circuit (turn-on) **Fig.C.T.2** - RBSOA Circuit **==> picture [266 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> diode clamp /<br>DUT<br>L<br>*<br>- 5V<br>900V<br>DUT /<br>DRIVER VCC<br>Rg<br>|<br>Fig.C.T.4 - RBSOA Circuit<br>VCC<br>R =<br>ICM<br>DUT VCC<br>Rg<br>**----- End of picture text -----**<br> **==> picture [92 x 68] intentionally omitted <==** **----- Start of picture text -----**<br> Driver<br>DC 900V<br>DUT<br>**----- End of picture text -----**<br> **Fig.C.T.3** - RBSOA Circuit **Fig.C.T.5** - RBSOA Circuit www.irf.com 10 ## IRGPS60B120KDP _Fig. WF1 - Typ. Turn-off Loss Waveform @ Tj=125°C using Fig. CT.4_ **==> picture [202 x 498] intentionally omitted <==** **----- Start of picture text -----**<br> 900 90<br>800 yd 80<br>700 70<br>ee 90% ICE<br>600 7 60<br>tr<br>500 oa 50<br>400 Le 40<br>300 30<br>onl<br>200 ye 20<br>5% VCE<br>100 | rs 10<br>5% ICE<br>0 | ces 0<br>Eoff Loss<br>-100 ~ -10<br>-0.50 0.50 1.50 2.50<br>Time (µs)<br>Fig. WF.3 - Typ. Diode Recovery<br>Waveform<br>@ Tj=125°C using Fig. CT.4<br>400 80<br>200 | 60<br>QRR<br>0 | 40<br>tRR<br>-200 Wy 20<br>-400 ye 0<br>Peak<br>-600 10% -20<br>IRR Peak<br>-800 \/ IRR -40<br>-1000 laa -60<br>-0.25 0.25 0.75<br>time (µS)<br> (V) (A)<br>VCE ICE<br> (V) (A)<br>VF IF<br>**----- End of picture text -----**<br> _Fig. WF2 - Typ. Turn-On Loss Waveform_ _@ Tj=125°C using Fig. CT.4_ **==> picture [202 x 233] intentionally omitted <==** **----- Start of picture text -----**<br> 800 120<br>700 a 105<br>600 pf 90<br>TEST CURRENT<br>—<br>500 75<br>pe<br>400 60<br>\f oo 90% test current ™-<br>300 45<br>WA<br>tr 10% test current<br>200 PV 30<br>5% V CE<br>100 ft 15<br>0 J 0<br>Eon Loss<br>-100 TO -15<br>4.10 4.30 4.50 4.70<br>Time (µs)<br> (V) (A)<br>VCE ICE<br>**----- End of picture text -----**<br> _Fig. WF.4 - Typ. S.C. Waveform @ TC=150°C using Fig. CT.3_ **==> picture [164 x 204] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 500<br>900 450<br>VCE<br>800 400<br>700 350<br>600 I CE 300<br>500 250<br>400 200<br>300 150<br>200 100<br>100 50<br>0 0<br>-5.00 0.00 5.00 10.00 15.00<br>time (µS)<br> (V) (A)<br>VCE ICE<br>**----- End of picture text -----**<br> www.irf.com 11 ## IRGPS60B120KDP ## Super-247™ Package Outline **==> picture [401 x 226] intentionally omitted <==** **----- Start of picture text -----**<br> 0.13 [.005]<br>5.50 [.216] [oe] 0.25 [.010] @ B | A<br>2X R 3.00 [.118]2.00 [.079] 16.10 [.632]15.10 [.595] A 4.50 [.178] 1.45 [.058]2.15 [.084] 13.90 [.547]13.30 [.524]<br>— s e Gt<br>1.30 [.051]<br>0.70 [.028]<br>20.80 [.818] 4 16.10 [.633]15.50 [.611] 4<br>19.80 [.780]<br>C<br>1 2 3<br>B<br>Ø 1.60 [.063] E E<br>14.80 [.582]13.80 [.544] 4.25 [.167] MAX.<br>3.85 [.152]<br>be b p<br>5.45 [.215] AT 3X [1.60 [.062]] 1.45 [.058] 3X 1.30 [.051]1.10 [.044] 1 1.65 [.065]2.35 [.092] SECTION E-E eh LEAD ASSIGNMENTS<br>2X 0.25 [.010] B A NOTES:1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994. 1 - GATE a MOSFET 1 - GATE _ IGBT<br>2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES] 2 - DRAIN 2 - COLLECTOR<br>3. CONTROLLING DIMENSION: MILLIMETER 3 - SOURCE 3 - EMITTER<br>4. OUTLINE CONFORMS TO JEDEC OUTLINE TO-274AA 4 - DRAIN 4 - COLLECTOR<br>**----- End of picture text -----**<br> ## Super-247 (TO-274AA) Part Marking Information Notes: **==> picture [233 x 127] intentionally omitted <==** **----- Start of picture text -----**<br> EXAMPLE: THIS IS AN IRFPS37N50A WITH<br> ASSEMBLY LOT CODE 1789<br>ASSEMBLED ON WW 19, 1997<br>IN THE ASSEMBLY LINE "C"<br>PART NUMBER<br>INTERNATIONAL RECTIFIER<br> LOGO IRFPS37N50A719C<br>17 89 DATE CODE<br>YEAR 7 = 1997<br>ASSEMBLY LOT CODE<br>WEEK 19<br>LINE C<br>al<br>Note: "P" in assembly line position TOP<br>indicates "Lead-Free"<br>**----- End of picture text -----**<br> VCC = 80% (VCES), VGE = 20V, L = 100 µH, RG = 4.7Ω. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 105A. Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. **IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/04 www.irf.com 12
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →