IRGP6630DPBF
IGBT, 47 A, 1.65 V, 192 W, 600 V, TO-247AC, 3 Pins
- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Power Dissipation: 192W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247AC
- Operating Temperature Max: 175°C
- Continuous Collector Current: 47A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.65V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 3.25 € |
| Current stock | 10+ |
| Lead time | 30 days |
International IRGP6630DPbF IRGP6630D-EPbF ## _**Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode**_ VCES = 600V C C C IC = 30A, TC =100°C tSC 5µs, TJ(max) = 175°C G C E C E G G VCE(ON) typ. = 1.65V @ IC = 18A E IRGP6630DPbF IRGP6630D‐EPbF n-channel TO‐247AC TO‐247AD **Applications** Welding G C E H Bridge Converters ~~es~~ Gate Collector Emitter **Features Benefits** Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications ~~a~~ ~~I~~ Optimized Diode for Full Bridge Hard Switch Converters Optimized for Welding and H Bridge Converters Improved Reliability due to Rugged Hard Switching Square RBSOA and Maximum Temperature of 175°C Performance and High Power Capability ~~I~~ 5µs Short Circuit Enables Short Circuit Protection Operation ~~I~~ Positive VCE (ON) Temperature Co-efficient Excellent Current Sharing in Parallel Operation ~~a~~ Lead-free, RoHS compliant Environmentally friendly |**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**| |---|---|---|---|---| |||**Form**|**Quantity**|| |IRGP6630DPbF|TO-247AC|Tube|25|IRGP6630DPbF| |IRGP6630D-EPbF|TO-247AD|Tube|25|IRGP6630D-EPbF| **Absolute Maximum Ratings** |**Absolute Maximum Ratings**<br>~~ee~~|**Absolute Maximum Ratings**<br>~~rr~~||| |---|---|---|---| |~~ee~~|**Parameter**<br>~~rr~~|**Max.**|**Units**| |VCES<br>~~ee~~<br>~~a ~~<br>~~es~~<br>~~SSS~~|Collector-to-Emitter Voltage<br>~~rr~~<br> ~~QO~~<br>~~SSS~~|600<br>~~QO~~<br>~~SSS~~|V<br>~~QO~~<br>~~SSS~~| |IC@ TC= 25°C<br>~~es~~<br>~~es~~<br>~~SSS~~|Continuous Collector Current<br>~~nD~~<br>~~SSS~~|47<br>~~nD~~<br>~~SSS~~|A<br>~~SSS~~| |IC @TC= 100°C<br>~~es~~<br>~~es~~<br>~~SSS~~|Continuous Collector Current<br>~~nD~~<br>~~SSS~~|30<br>~~nD~~<br>~~SSS~~|| |ICM<br>~~es~~<br>~~nD~~<br>~~es~~<br>~~SSS~~|Pulse Collector Current, VGE=15V<br>~~nD~~<br>~~nD~~<br>~~nD~~<br>~~SSS~~|54<br>~~nD~~<br>~~nD~~<br>~~nD~~<br>~~SSS~~|| |ILM<br>~~es~~<br>~~SSS~~|Clamped Inductive Load Current, VGE=20V<br>~~nD~~<br>~~SSS~~|72<br>~~nD~~<br>~~SSS~~|| |IFRM@ TC= 100°C<br>~~es~~<br>~~SSS~~|Diode Repetitive Peak Forward Current<br>~~nD~~<br>~~SSS~~|15<br>~~nD~~<br>~~SSS~~|| |IFM<br>~~SSS~~|Diode Maximum Forward Current<br>~~SSS~~|72<br>~~SSS~~|| |VGE<br>~~SSS~~<br>~~Pee~~<br>~~Sp~~|Continuous Gate-to-Emitter Voltage<br>~~SSS~~<br>~~Pee~~<br>~~Sp~~|±20<br>~~SSS~~<br>~~Pee~~|V<br>~~SSS~~<br>~~Pee~~| |PD @TC= 25°C<br>~~Sp~~|Maximum Power Dissipation<br>~~Sp~~|192|W| |PD @TC= 100°C<br>~~Sp~~<br>~~I~~|Maximum Power Dissipation<br>~~Sp~~<br>~~I~~|96<br>~~I~~|| |TJ<br>TSTG<br>~~Sp~~<br>~~I~~<br>~~a~~|Operating Junction and<br>Storage Temperature Range<br>~~Sp~~<br>~~I~~<br>~~a~~|-40 to +175<br>~~I~~<br>~~a~~|°C<br>~~(Ot~~| |~~I~~<br>~~ee~~|SolderingTemperature,for 10 sec.<br>~~I~~<br>~~(Ot~~|300(0.063 in.(1.6mm)from case)<br>~~I~~<br>~~(Ot~~|| |~~ee~~|Mounting Torque, 6-32 or M3 Screw<br>~~(Ot~~|10 lbf·in (1.1 N·m)<br>~~(Ot~~|~~(Ot~~| 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 ~~a~~ IRGP6630DPbF/IRGP6630D-EPbF ~~(nnn~~ ## ~~IGR~~ ## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** |~~———————~~|**Parameter**<br>~~———————~~|**Min.**<br>~~e~~~~**e**~~|**Typ. **<br>~~e~~~~**e**~~|**Max**<br>~~ee~~|**Units**<br>~~ee~~|**Conditions**<br>~~ee~~| |---|---|---|---|---|---|---| |Qg<br>~~es~~<br>~~———————~~|Total Gate Charge (turn-on)<br>~~es~~<br>~~———————~~|—<br>~~es~~<br>~~e~~~~**e**~~|30<br>~~es~~<br>~~e~~~~**e**~~|—<br>~~es~~<br>~~ee~~|nC<br>~~es~~<br>~~ee~~|IC= 18A<br>VGE= 15V<br>VCC= 400V<br>~~es~~<br>~~ee~~<br>~~ee~~| |g<br>Qge<br>~~es~~<br>~~———————~~|Gate-to-Emitter Charge (turn-on)<br>~~es~~<br>~~———————~~|—<br>~~es~~<br>~~e~~~~**e**~~|10<br>~~es~~<br>~~e~~~~**e**~~|—<br>~~es~~<br>~~ee~~||| |ge<br>Qgc<br>~~es~~<br>~~———————~~<br>~~ee~~<br>~~===~~|Gate-to-Collector Charge (turn-on)<br>~~es~~<br>~~———————~~<br><br>~~===~~|—<br>~~es~~<br>~~e~~~~**e**~~<br>~~o~~<br><br>~~===~~|15<br>~~es~~<br>~~e~~~~**e**~~<br>~~o~~<br><br>~~===~~|—<br>~~es~~<br>~~ee~~<br>||| |gc<br>Eon<br>~~———————~~<br>~~ee~~<br>~~===~~|Turn-On Switching Loss<br>~~———————~~<br><br>~~===~~|—<br>~~e~~~~**e**~~<br>~~o~~<br><br>~~===~~|75<br>~~e~~~~**e**~~<br>~~o~~<br><br>~~===~~|—<br>~~ee~~<br>|µJ <br>~~ee~~|IC= 18A, VCC= 400V, VGE=15V<br>RG= 22, TJ= 25°C<br>Energy losses include tail & diode<br>reverse recovery<br>~~ee~~<br>~~ee~~| |Eoff<br>~~———————~~<br>~~ee~~<br>~~===~~|Turn-OffSwitchingLoss<br>~~———————~~<br>~~es~~<br>~~===~~|—<br>~~e~~~~**e**~~<br>~~o~~<br>~~es~~<br>~~===~~|350<br>~~e~~~~**e**~~<br>~~o~~<br>~~es~~<br>~~===~~|—<br>~~ee~~<br>~~es~~||| |Etotal<br>~~———————~~<br>~~ee~~<br>~~es~~<br>~~===~~|TotalSwitchingLoss<br>~~———————~~<br>~~es~~<br>~~es~~<br>~~===~~|—<br>~~e~~~~**e**~~<br>~~o~~<br>~~es~~<br>~~es~~<br>~~===~~|425<br>~~e~~~~**e**~~<br>~~o~~<br>~~es~~<br>~~es~~<br>~~===~~|—<br>~~ee~~<br>~~es~~<br>~~es~~||| |td(on)<br>~~———————~~<br>~~ee~~<br>~~es~~<br>~~===~~|Turn-On delay time<br>~~———————~~<br><br>~~es~~<br>~~===~~|—<br>~~e~~~~**e** ~~<br>~~o~~<br><br>~~es~~<br>~~===~~|40<br> ~~e~~~~**e** ~~<br>~~o~~<br><br>~~es~~<br>~~===~~|—<br> ~~ee~~<br><br>~~es~~|ns<br>~~ee~~|| |d(on)<br>tr<br>~~===~~<br>~~—_~~|Rise time<br>~~===~~<br>~~—_~~|—<br>~~===~~|25<br>~~===~~|—||| |td(off)<br>~~===~~<br>~~—_~~|Turn-Off delay time<br>~~===~~<br>~~—_~~|—<br>~~===~~|95<br>~~===~~|—||| |d(off)<br>tf<br>~~===~~<br>~~—_~~|Fall time<br>~~===~~<br>~~—_~~|—<br>~~===~~|20<br>~~===~~|—||| |Eon<br>~~===~~<br>~~—_~~<br>~~—~~|Turn-On SwitchingLoss<br>~~===~~<br>~~—_~~<br>~~ae~~|—<br>~~===~~<br>~~ae~~|230<br>~~===~~<br>~~ae~~|—<br>~~ae~~|µJ<br>~~ae~~|IC= 18A, VCC= 400V, VGE=15V<br>RG= 22, TJ= 175°C<br>Energy losses include tail & diode<br>reverse recovery<br>~~ee~~| |Eoff<br>~~—_~~<br>~~—~~|Turn-Off Switching Loss<br>~~—_~~<br>~~ae~~|—<br>~~ae~~|570<br>~~ae~~|—<br>~~ae~~||| |Etotal<br>~~—~~|Total Switching Loss<br>~~ae~~|—<br>~~ae~~|800<br>~~ae~~|—<br>~~ae~~||| |td(on)<br>~~—————~~|Turn-On delay time<br>~~—————~~|—<br>~~—————~~|30<br>~~—————~~|—<br>~~—————~~|ns<br>~~—————~~|| |d(on)<br>tr<br>~~—————~~|Rise time<br>~~—————~~|—<br>~~—————~~|25<br>~~—————~~|—<br>~~—————~~||| |td(off)<br>~~—————~~|Turn-Off delay time<br>~~—————~~|—<br>~~—————~~|100<br>~~—————~~|—<br>~~—————~~||| |d(off)<br>tf<br>~~—————~~|Fall time<br>~~—————~~|—<br>~~—————~~|80<br>~~—————~~|—<br>~~—————~~||| |Cies<br>~~FE~~|Input Capacitance<br>~~FE~~|—<br>~~FE~~|1080|—|pF|VGE= 0V<br>VCC= 30V<br>f = 1.0MHz<br>~~——$§—~~| |Coes<br>~~FE~~|Output Capacitance<br>~~FE~~|—<br>~~FE~~|70|—||| |Cres<br>~~FE~~<br>~~pj~~|Reverse Transfer Capacitance<br>~~FE~~<br>~~pj$$]~~|—<br>~~FE~~<br>~~$$]~~|30<br>~~$$]~~|—||| |RBSOA<br>~~pj~~|Reverse Bias Safe Operating Area<br>~~pj$$]~~|FULL SQUARE<br>~~$$]~~||||TJ= 175°C, IC= 72A<br>VCC= 480V, Vp ≤ 600V<br>VGE= +20V to 0V<br>~~——$§—~~| |SCSOA<br>~~pj~~|Short Circuit Safe Operating Area<br>~~pj$$]~~<br>~~es~~|5<br>~~$$]~~|—<br>~~$$]~~|—|µs|TJ= 150°C,VCC= 400V, Vp ≤ 600V<br>VGE= +15V to 0V<br>~~——$§—~~| |Erec<br>~~pj~~<br>~~———~~|ReverseRecoveryEnergy oftheDiode<br>~~pj$$]~~<br>~~———~~<br>~~es~~|—<br>~~$$]~~<br>~~———~~|180<br>~~$$]~~<br>~~———~~|—<br>~~———~~|µJ<br>~~———~~|TJ= 175°C<br>VCC= 400V, IF= 6A, VGE= 15V<br>Rg = 22L = 0.68mH, L=150nH<br>~~——$§—~~<br>~~———~~| |trr<br>~~pj~~<br>~~———~~|DiodeReverseRecoveryTime<br>~~pj $$]~~<br>~~———~~<br>~~es~~|—<br>~~$$]~~<br>~~———~~|70<br>~~$$]~~<br>~~———~~|—<br>~~———~~|ns<br>~~———~~|| |Irr<br>~~———~~|Peak Reverse RecoveryCurrent<br>~~———~~<br>~~es~~|—<br>~~———~~|15<br>~~———~~|—<br>~~———~~|A<br>~~———~~|| - R is measured at TJ of approximately 90°C. - Refer to AN-1086 for guidelines for measuring V(BR)CES safely. - Pulse width limited by max. junction temperature. - Values influenced by parasitic L and C in measurement. - fsw =40KHz, refer to figure 26. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 ~~LeaR~~ IRGP6630DPbF/IRGP6630D-EPbF ~~ee~~ **==> picture [437 x 235] intentionally omitted <==** **----- Start of picture text -----**<br> 60<br>For both:<br>Duty cycle : 50%<br>TOLL Tj = 175°C<br>50 Tcase = 100°C<br>Gate drive as specified<br>Power Dissipation = 103W<br>40<br>COSS<br>Square Wave:<br>VCC<br>30 TIS<br>I<br>20<br>Diode as specified<br>Co PS<br>2 I Co<br>10<br>0.1 1 10 100<br>f , Frequency ( kHz )<br>Fig. 1 - Typical Load Current vs. Frequency<br> (Load Current = IRMS of fundamental)<br>Load Current ( A )<br>**----- End of picture text -----**<br> **==> picture [200 x 194] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>40<br>SOE<br>30 PASC<br>20 C CPNCE<br>10 C CEEN=<br>0 CCECN<br>25 50 75 100 125 150 175<br> TC (°C)<br>IC (A)<br>**----- End of picture text -----**<br> **==> picture [485 x 456] intentionally omitted <==** **----- Start of picture text -----**<br> 50 200<br>40<br>SOE<br>150<br>30 PASC<br>100<br>20 C CPNCE<br>50<br>10 C CEEN=<br>0 CCECN 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br> TC (°C) TC (°C)<br>Fig. 2 - Maximum DC Collector Current vs. Fig. 3 - Power Dissipation vs.<br>Case Temperature<br>Case Temperature<br>100 100<br>10µsec<br>100µsec<br>10<br>ey 1msec 10 Oe<br>1 DC<br>Tc = 25°C<br>Tj = 175°C<br>Single Pulse<br>0.1 Ay 1 ee<br>1 10 100 1000 10 100 1000<br>VCE (V) VCE (V)<br>Fig. 4 - Forward SOA Fig. 5 - Reverse Bias SOA<br>TC = 25°C; TJ ≤ 175°C; VGE = 15V TJ = 175°C; VGE = 20V<br>IC (A)<br>IC (A) IC (A)<br>Ptot (W)<br>**----- End of picture text -----**<br> **Fig. 2** - Maximum DC Collector Current vs. 3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 ~~ee~~ ~~16é4R~~ IRGP6630DPbF/IRGP6630D-EPbF ~~ee~~ **==> picture [479 x 665] intentionally omitted <==** **----- Start of picture text -----**<br> 72 72<br>VGE = 18V VGE = 18V<br>60 V GE = 15V 60 V GE = 15V<br>VGE = 12V VGE = 12V<br>VGE = 10V VGE = 10V<br>48 VGE = 8.0V 48 VGE = 8.0V<br>36 FyTE = 36 TTAWE<br>24 24<br>12 fe 12<br>0 aa 0 PEEEIE<br>0 2 4 6 8 10 0 2 4 6 8 10<br> VCE (V) VCE (V)<br>Fig. 6 - Typ. IGBT Output Characteristics Fig. 7 - Typ. IGBT Output Characteristics<br>TJ = -40°C; tp = 20µs TJ = 25°C; tp = 20µs J = 25°C; tp = 20µs = 25°C; tp = 20µs<br>72 72<br>VGE = 18V -40°C<br>60 V GE = 15V 60 25°C<br>VGE = 12V 175°C<br>VGE = 10V<br>48 V GE = 8.0V a= 48 aanEet/e<br>EP souen/40<br>36 a 36 Sean, 4a0<br>24 Tea 24 S aa0 00<br>12 T= 12 fon/ace<br>0 FBS 0 PA<br>0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br> VCE (V) VF (V)<br>Fig. 8 - Typ. IGBT Output Characteristics Fig. 9 - Typ. Diode Forward Voltage Drop<br>TJ = 175°C; tp = 20µs Characteristics<br>8 8<br>6 I CE = 9.0A 6<br>ICE = 18A ICE = 9.0A<br>ICE = 36A ICE = 18A<br>4 |7| 4 a iei ICE = 36A<br>2 2<br>i (a<br>0 fF 0 fr<br>5 10 15 20 5 10 15 20<br> VGE (V) VGE (V)<br>ICE (A) ICE (A)<br>ICE (A)<br>VCE (V) VCE (V)<br>IF (A)<br>**----- End of picture text -----**<br> **Fig. 7** - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20µs J = 25°C; tp = 20µs = 25°C; tp = 20µs **Fig. 9** - Typ. Diode Forward Voltage Drop **Fig. 10** - Typical VCE vs. VGE TJ = -40°C **Fig. 11** - Typical VCE vs. VGE TJ = 25°C 4 ~~—~~ 4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGP6630DPbF/IRGP6630D-EPbF ~~ee~~ ## ~~1I6aR~~ **==> picture [209 x 667] intentionally omitted <==** **----- Start of picture text -----**<br> 8<br>6 I CE = 9.0A<br>ICE = 18A<br>ICE = 36A<br>4 HE<br>2<br>oS<br>0<br>5 10 15 20<br> VGE (V)<br>Fig. 12 - Typical VCE vs. VGE<br>TJ = 175°C<br>2000<br>1600<br>1200<br>800 EOFF<br>400 E ON<br>Z|<br>0<br>0 10 20 30 40<br>IC (A)<br>Fig. 14 - Typ. Energy Loss vs. ICC<br>TJ = 175°C; ; VCE = 400V, RG = 22; VGEJ = 175°C; ; VCE = 400V, RG = 22; VGE = 175°C; ; VCE = 400V, RG = 22; VGECE = 400V, RG = 22; VGE= 400V, RG = 22; VGEG = 22; VGE = 22; VGE; VGE; VGEGE = 15V<br>1000<br>800<br>ZA<br>600 E OFF<br>400 EON<br>200<br>4<br>0<br>0 20 40 60 80 100<br>Rg ()<br>VCE (V)<br>J)<br><br>Energy (<br>J)<br><br>Energy (<br>**----- End of picture text -----**<br> **Fig. 14** - Typ. Energy Loss vs. ICC TJ = 175°C; ; VCE = 400V, RG = 22; VGEJ = 175°C; ; VCE = 400V, RG = 22; VGE = 175°C; ; VCE = 400V, RG = 22; VGECE = 400V, RG = 22; VGE= 400V, RG = 22; VGEG = 22; VGE = 22; VGE; VGE; VGEGE = 15V **==> picture [207 x 668] intentionally omitted <==** **----- Start of picture text -----**<br> 72<br>60 T J = 25°C<br>TJ = 175°C<br>48<br>36 ph<br>24<br>12<br>0 ip<br>4 6 8 10 12 14 16<br> VGE (V)<br>Fig. 13 - Typ. Transfer Characteristics<br>VCE = 50V; tp = 20µs CE = 50V; tp = 20µs = 50V; tp = 20µs<br>1000<br>td OFF<br>100<br>tF<br>—<br>t R<br>10 4 td ON<br>1 WE<br>0 10 20 30 40<br>IC (A)<br>Fig. 15 - Typ. Switching Time vs. ICC<br>TJ = 175°C; VCE = 400V, RG = 22; VGEJ = 175°C; VCE = 400V, RG = 22; VGE = 175°C; VCE = 400V, RG = 22; VGECE = 400V, RG = 22; VGE = 400V, RG = 22; VGEG = 22; VGE = 22; VGE; VGE; VGEGE = 15V<br>1000<br>td OFF<br>100<br>tF<br>td ON<br>t R<br>10 EZaal<br>0 20 40 60 80 100<br>RG ()<br>ICE (A)<br>Swiching Time (ns)<br>Swiching Time (ns)<br>**----- End of picture text -----**<br> **Fig. 13** - Typ. Transfer Characteristics VCE = 50V; tp = 20µs CE = 50V; tp = 20µs = 50V; tp = 20µs **Fig. 15** - Typ. Switching Time vs. ICC TJ = 175°C; VCE = 400V, RG = 22; VGEJ = 175°C; VCE = 400V, RG = 22; VGE = 175°C; VCE = 400V, RG = 22; VGECE = 400V, RG = 22; VGE = 400V, RG = 22; VGEG = 22; VGE = 22; VGE; VGE; VGEGE = 15V **Fig. 17** - Typ. Switching Time vs. RG TJ = 175°C; VCE = 400V, ICE = 18A; VGE = 15V J = 175°C; VCE = 400V, ICE = 18A; VGE = 15V = 175°C; VCE = 400V, ICE = 18A; VGE = 15V CE = 400V, ICE = 18A; VGE = 15V = 400V, ICE = 18A; VGE = 15V CE = 18A; VGE = 15V = 18A; VGE = 15V GE = 15V = 15V **Fig. 16** - Typ. Energy Loss vs. RG G TJ = 175°C; VCE = 400V, ICE = 18A; VGE = 15V TJ = 175°C; VCE = 400V, ICE = 18A; VGE = 15V J = 175°C; VCE = 400V, ICE = 18A; VGE = 15V = 175°C; VCE = 400V, ICE = 18A; VGE = 15V CE = 400V, ICE = 18A; VGE = 15V = 400V, ICE = 18A; VGE = 15V CE = 18A; VGE = 15V = 18A; VGE = 15V GE = 15V = 15V 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 ~~ys ©~~ **==> picture [558 x 228] intentionally omitted <==** **----- Start of picture text -----**<br> IRGP6630DPbF/IRGP6630D-EPbF<br>i#4,k<br>25 25<br>RG = 10<br>20 20<br>[te |ft<br>RG = 22<br>15 Zanes 15 ft ff<br>RG = 47<br>10 10<br>ey tt — ptRUREeSATRUREeSATSAT<br>5 +7 RG = 100 5 |<br>0 et ft ft 0 eft|tfPtefft|tfPtef|tfPteftfPteffPtefPteff<br>2 4 6 8 10 12 0 20 40 60 80 100<br>IF (A) RG (<br>IRR (A) IRR (A)<br>**----- End of picture text -----**<br> **==> picture [201 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> 25<br>20<br>15 |ft ff<br>10<br>ptRUREeSATRUREeSATSAT<br>|<br>5<br>0 eft|tfPtefft|tfPtef|tfPteftfPteffPtefPteff<br>0 20 40 60 80 100<br>RG (<br>IRR (A)<br>**----- End of picture text -----**<br> **Fig. 19** - Typ. Diode IRR vs. RG TJ = 175°C **Fig. 18** - Typ. Diode IRR vs. IF TJ = 175°C **==> picture [212 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> 2000<br>1500<br>12A<br>10<br>1000 47 22<br>100<br>6A<br>500<br>3A<br>0<br>0 200 400 600 800 1000 1200 1400<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br> **==> picture [204 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> 25<br>20<br>15<br>10<br>5<br>0 200 400 600 800 1000 1200<br>diF /dt (A/µs)<br>IRR (A)<br>**----- End of picture text -----**<br> **Fig. 20** - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 6A; TJ = 175°C **Fig. 21** - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C **==> picture [200 x 201] intentionally omitted <==** **----- Start of picture text -----**<br> 350<br>RG = 10<br>300 C R t G = 22 TT<br>RG = 47<br>250<br>RG = 100<br>200<br>ZZ<br>150<br>CFE<br>100<br>50<br>TTI<br>0<br>2 4 6 8 10 12<br>IF (A)<br>Energy (µJ)<br>**----- End of picture text -----**<br> **==> picture [233 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> 20 100<br>16 80<br>Tsc Isc<br>12 60<br>NZ<br>8 x 40<br>4 20<br>0 FEEL 0<br>9 10 11 12 13 14 15 16<br>VGE (V)<br>Time (µs) Current (A)<br>**----- End of picture text -----**<br> **Fig. 23** - VGE vs. Short Circuit Time VCC = 400V; TC = 150°C **Fig. 22** - Typ. Diode ERR vs. IF TJ = 175°C 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 ~~=°°—~~ IRGP6630DPbF/IRGP6630D-EPbF **==> picture [489 x 717] intentionally omitted <==** **----- Start of picture text -----**<br> 10000 16<br>TeoR<br>14 VCES = 400VCES = 400V= 400V<br>1000 Tn Cies 12 =foo VCES = 300VCES = 300V = 300V Va<br>10<br>100 PTT yyy 8 op EE EE<br>Coes 6<br>S=am aceon<br>10 NSS Cres EE 4 CVE<br>2<br>1 Seeeee 0 AZAZA<br>0 100 200 300 400 500 600 0 5 10 15 20 25 30<br>VCE (V) Q G, Total Gate Charge (nC)<br>Fig. 24 - Typ. Capacitance vs. VCE Fig. 25 - Typical Gate Charge vs. VGE<br> VGE= 0V; f = 1MHz ICE = 18A CE = 18A = 18A<br>50<br>40<br>D=0.1<br>30 =<br>D=0.2<br>20 PSION<br>D=0.5<br>10<br>~LSA<br>0 aN<br>100 125 150 175<br>Case Temperature (°C)<br>Fig 26. Maximum Diode Repetitive Forward Peak Current vs. Case Temperature<br>1<br>D = 0.50<br>0.20<br>0.1 Him caneCae ULTTT LlTT<br>0.10<br>0.05 R1R1 R2R2 R3R3 Ri (°C/W) i (sec)<br> J J C C 0.21694 0.00021<br>0.02 1 1 2 2 3 3 0.29812 0.000939<br>0.01<br>0.01 Ci Ci = = i Ri iRi 0.26453 0.008391<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>te<br>0.001<br>cue AME LL<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Repetitive Peak Current (A)<br>Capacitance (pF)<br>VGE, Gate-to-Emitter Voltage (V)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br> **==> picture [200 x 222] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>14 VCES = 400VCES = 400V= 400V<br>12 foo=foo VCES = 300VCES = 300V = 300V Va<br>10<br>op EE EE<br>8<br>6<br>aceon<br>4 CVE<br>2<br>AZAZA<br>0<br>0 5 10 15 20 25 30 35<br>Q G, Total Gate Charge (nC)<br>Fig. 25 - Typical Gate Charge vs. VGE<br> ICE = 18A CE = 18A = 18A<br>VGE, Gate-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br> **Fig. 27 -** Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 ~~ee~~ ~~LR~~ IRGP6630DPbF/IRGP6630D-EPbF ~~ee~~ **==> picture [435 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>D = 0.50 LU ao<br>1 0.20<br>0.10<br>Si AFBae ee coal<br>0.05<br>°<br>Ri ( C/W) i (sec)<br>0.1 0.02 0.01 J J 1 1 R 1R1 2 R2 2R2 R 33R 3 3 R 4 4R 4 4 C C 0.40747 1.84187 2.51697 0.000104 0.000268 0.002634<br>Ci= iRi<br>0.01 Dall ed Ci= iRi<br>Beall ee 1.13369 eee 0.026058 ee<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>Si ena<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br> **Fig. 28 -** Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 8 ~~—~~ 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGP6630DPbF/IRGP6630D-EPbF **==> picture [264 x 58] intentionally omitted <==** **----- Start of picture text -----**<br> L<br>DUT VCC<br>0<br>1K<br>**----- End of picture text -----**<br> **==> picture [202 x 106] intentionally omitted <==** **----- Start of picture text -----**<br> L<br>80 V +<br>- DUT VCC<br>Rg<br>**----- End of picture text -----**<br> **Fig.C.T.1** - Gate Charge Circuit (turn-off) **Fig.C.T.2** - RBSOA Circuit **==> picture [527 x 488] intentionally omitted <==** **----- Start of picture text -----**<br> diode clamp /<br>DUT<br>4X L<br>DC VCC<br>-5V<br>DUT DUT / VCC<br>DRIVER<br>Rg<br>RSH<br>Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit<br>C force<br>R = [VCC]<br>ICM<br>100K<br>D1 22K<br>C sense<br>VCC<br>DUT DUT<br>G force 0.0075µF<br>Rg<br>E sense<br>fib<br>E force<br>Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit<br>9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014<br>**----- End of picture text -----**<br> IRGP6630DPbF/IRGP6630D-EPbF ~~_~~ ## ~~IGOR~~ **==> picture [541 x 635] intentionally omitted <==** **----- Start of picture text -----**<br> 600 30 600 30<br>tr<br>TEST<br>tf<br>CURRENT<br>500 25 500 25<br>400 20 400 20<br>90% ICE<br>300 Te 15 300 fw 15<br>90% ICE<br>200 10 200 10<br>oe ee<br>10% VCE 10%ICE<br>100 5 100 5<br>yi re i 10% VCE<br>10% ICE<br>0 0 0 0<br>Bone YE<br>Eon Loss<br>Eoff Loss<br>-100 -5 -100 -5<br>-0.2 0 0.2 0.4 0.6 0.8 -0.4 0 0.4 0.8 1.2<br>time (µs)<br>time(µs)<br>Fig. WF1 - Typ. Turn-off Loss Waveform Fig. WF2 - Typ. Turn-on Loss Waveform<br>@ TJ = 175°C using Fig. CT.4 @ TJ = 175°C using Fig. CT.4<br>600 120<br>20<br>500 100<br>15 oo a<br>QRR VCE<br>400 80<br>10 ~<br>tRR ICE<br>5 300 60<br>0 200 40<br>-5<br>Peak 100 20<br>IRR<br>We s<br>-10<br>0 0<br>Ll J<br>-15<br>-100 -20<br>-20 -10.00 -5.00 0.00 5.00<br>an as<br>-0.15 -0.05 0.05 0.15 0.25 0.35<br>Time (uS)<br>time (µS)<br> (V) (A)<br> (V) (A) VCE ICE<br>VCE ICE<br> (A)IF Ice (A)<br>Vce (V)<br>**----- End of picture text -----**<br> **Fig. WF3** - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 **Fig. WF4** - Typ. S.C. Waveform @ TJ = 150°C using Fig. CT.3 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 ~~—Iae~~ IRGP6630DPbF/IRGP6630D-EPbF ~~ee~~ ## ~~LéaR~~ ## TO-247AC Package Outline Dimensions are shown in millimeters (inches) ## TO-247AC Part Marking Information Notes: This part marking information applies to devices produced after 02/26/2001 **==> picture [454 x 98] intentionally omitted <==** **----- Start of picture text -----**<br> EXAMPLE: THIS IS AN IRFPE30<br>WITH ASSEMBLY PART NUMBER<br>LOT CODE 5657 INTERNATIONAL<br>ASSEMBLED ON WW 35, 2001 RECTIFIER IRFPE30<br>LOGO Po 135H d<br>IN THE ASSEMBLY LINE "H"<br>_ —- 56 57<br>DATE CODE<br>ASSEMBLY YEAR 1 = 2001<br>Note: "P" in assembly line position<br>LOT CODE WEEK 35<br>indicates "Lead-Free"<br>LINE H<br>**----- End of picture text -----**<br> TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 ~~LZ:~~ IRGP6630DPbF/IRGP6630D-EPbF ~~ee~~ ## ~~LeaR~~ ## TO-247AD Package Outline Dimensions are shown in millimeters (inches) ## TO-247AD Part Marking Information E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D -E W IT H A S S E M B L Y L O T C O D E 5 6 5 7 A S S E M B L E D O N W W 3 5 , 2 0 0 0 IN T H E A S S E M B L Y L IN E "H " N o te : "P " in a s s e m b ly lin e p o s itio n in d ic a te s "L e a d -F re e " **==> picture [209 x 80] intentionally omitted <==** **----- Start of picture text -----**<br> P A R T N U M B E R<br>IN T E R N A T IO N A L<br>R E C T IF IE RL O G O IRGIeRP30B1 20KD 0 3 5 H -E |<br>5 6 5 7<br>D A T E C O D E<br>A S S E M B L Y YE A R 0 = 2 0 0 0<br>L O T C O D E W E E K 3 5<br>L IN E H<br>**----- End of picture text -----**<br> TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 12 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 ~~1I6aR~~ IRGP6630DPbF/IRGP6630D-EPbF ~~ee~~ ## **Qualification Information[† ]** |**Qualification Information[† ]**||| |---|---|---| |**Qualification Level**|Industrial|| |**Moisture Sensitivity Level**|TO-247AC|N/A| ||TO-247AD|| |**RoHS Compliant**|Yes|| - Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ - †† Applicable version of JEDEC standard at the time of product release. ## **Revision History** |**Revision History**|**Revision History**| |---|---| |**Date**|**Comments**| |11/14/2014|Added IFMDiode Maximum Forward Current = 72A with the noteon page 1.<br>Removed notefrom switching losses test condition on page 2.| **IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 13 www.irf.com ~~a~~ 13 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 ~~a _~~
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →