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IRGP4640D-EPBF
IGBT, 65 A, 1.6 V, 250 W, 600 V, TO-247AD, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:65A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AD; No. of P
- MSL: -
- SVHC: No SVHC (08-Jul-2021)
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 250W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247AD
- Operating Temperature Max: 175°C
- Continuous Collector Current: 65A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.6V
| Delivery and price | |
|---|---|
| Units per pack | 400 |
| Price | 3.28 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF ~~a~~
## ore ~~Cinfineon~~
## _**Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode**_
|VCES= 600V<br>IC= 40A, TC=100°C<br>tSC ≥5µs, TJ(max)= 175°C<br>VCE(ON)typ. = 1.60V @ IC= 24A<br>IRGP4640DPbF<br>TO-247AC<br>IRGP4640D-EPbF<br>TO-247AD<br>E<br>G<br>n-channel<br>C<br>C<br>E<br>G<br>IRGS4640DPbF<br>D2Pak<br>C<br>E<br>G<br>IRGB4640DPbF<br>TO-220AC<br>CE<br>G<br>CE<br>G<br>IRGSL4640DPbF<br>TO-262Pak<br>E<br>GC|
|---|
|**Applications**|
|•<br>Industrial Motor Drive<br>•<br>Inverters<br>G<br>C<br>E<br>Gate<br>Collector<br>Emitter<br>~~[_ts~~|
|•<br>UPS|
|•<br>Welding|
|**Features**<br>**Benefits**|
|Low VCE(ON)and switching losses<br>High efficiency in a wide range of applications and switching<br>Square RBSOA and maximum junction temperature 175°CImproved reliability due to rugged hard switching<br>performance and high power capability<br>Positive VCE (ON)temperature coefficient<br>Excellent current sharinginparallel operation<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~Ge~~|
|5µs Short Circuit SOA<br>Enables short circuit protection scheme<br>~~eG~~|
|Lead-Free, RoHS Compliant<br>Environmentally friendly|
||
|**Base part number**<br>**Package Type**<br>**Standard Pack**<br>**Form**<br>**Quantity**<br>**Orderable Part Number**|
|Tube<br>50<br>IRGS4640DPbF|
|IRGS4640DPbF<br>D2Pak<br>Tape and Reel Right<br>800<br>IRGS4640DTRRPbF|
|Tape and Reel Left<br>800<br>IRGS4640DTRLPbF|
|IRGSL4640DPbF<br>TO-262<br>Tube<br>50<br>IRGSL4640DPbF|
|IRGB4640DPbF<br>TO-220AB<br>Tube<br>50<br>IRGB4640DPbF|
|IRGP4640DPbF<br>TO-247AC<br>Tube<br>25<br>IRGP4640DPbF|
|IRGP4640D-EPbF<br>TO-247AD<br>Tube<br>25<br>IRGP4640D-EPbF|
|**Absolute Maximum Ratings**|
|**Parameter**<br>**Max.**<br>**Units**<br>VCES<br>Collector-to-Emitter Voltage<br>600<br>V<br>~~es~~<br>~~Oe~~|
|IC @TC= 25°C<br>Continuous Collector Current<br>65<br>~~eG~~|
|A<br>IC@ TC =100°C<br>Continuous Collector Current<br>40<br>ICM<br>Pulse Collector Current, VGE=15V<br>72<br>~~eG~~|
|ILM<br>Clamped Inductive Load Current, VGE=20V<br>96|
|IF @TC= 25°C<br>Diode Continuous Forward Current<br>65<br>~~sO~~|
|IF @TC= 100°C<br>Diode Continuous Forward Current<br>40<br>VGE<br>Continuous Gate-to-Emitter Voltage<br>±20<br>V<br>PD @TC= 25°C<br>Maximum Power Dissipation<br>250<br>W<br>PD@ TC =100°C<br>Maximum Power Dissipation<br>125<br>TJ<br>Operating Junction and<br>-55 to +175<br>C<br>TSTG<br>Storage Temperature Range<br>Soldering Temperature, for 10 sec. (1.6mm from case)<br>300<br>Mounting Torque, 6-32 or M3 Screw (TO-220, TO-247)<br>10 lbf·in (1.1 N·m)<br>IFM<br>Diode Maximum Forward Current<br>96<br>Transient Gate to Emitter Voltage<br>±30<br>~~sO~~<br>~~Se nnn~~<br>~~STO"~~<br>~~—~~<br>~~esSe~~<br>~~ne~~<br>~~es~~<br>~~esee~~|
Notes through are on page 8 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback January 20, 2015 ~~COC OO~~
IRGS/SL/B/P4640D/EPbF ~~a~~
## ~~TR~~
## **Thermal Resistance**
|~~es~~||||||
|---|---|---|---|---|---|
|~~es~~<br>~~—_——————~~|**Parameter**<br>~~—_——————~~|**Min.**<br>~~—_——————~~|**Typ.**<br>~~—_——————~~|**Max. Units**<br>~~—_——————~~|**Max. Units**|
|RθJC(IGBT)<br>~~es~~<br>~~—_——————~~<br>~~**a**~~<br>~~pO~~|Thermal Resistance Junction-to-Case (D2Pak, TO-220, TO-262)<br>~~—_——————~~<br>~~**a**~~<br>|–––<br>~~—_——————~~<br>|–––<br>~~—_——————~~<br>|0.60<br>~~—_——————~~<br>|°C/W|
||Thermal Resistance Junction-to-Case (TO-247)<br>~~—_——————~~<br>~~**a**~~<br>|–––<br>~~—_——————~~<br>|–––<br>~~—_——————~~<br>|0.60<br>~~—_——————~~<br>||
|RθJC(Diode)<br>~~—_——————~~<br>~~**a**~~<br>~~pO—————~~|Thermal Resistance Junction-to-Case (D2Pak, TO-220, TO-262)<br>~~—_——————~~<br>~~**a**~~<br>|–––<br>~~—_——————~~<br>|–––<br>~~—_——————~~<br>|1.53<br>~~—_——————~~<br>||
||Thermal Resistance Junction-to-Case (TO-247)<br>~~**a**~~<br>~~—————~~|–––<br>~~—————~~|–––<br>~~—————~~|1.62<br>~~—————~~||
|RθCS<br>~~**a**~~<br>~~pO—————~~|Thermal Resistance, Case-to-Sink (flat, greased surface– TO 220, D2Pak, TO-262)<br>~~**a**~~<br>~~—————~~|–––<br>~~—————~~|0.50<br>~~—————~~|–––<br>~~—————~~||
||Thermal Resistance, Case-to-Sink (flat, greased surface– TO 247)<br>~~—————~~<br>~~ee~~|–––<br>~~—————~~<br>~~ee~~|0.24<br>~~—————~~<br>~~ee~~|–––<br>~~—————~~<br>~~ee~~||
|RθJA<br>~~—————~~<br>~~ee~~|Thermal Resistance, Junction-to-Ambient (PCB Mount - D2Pak, TO-262)<br>~~—————~~<br>~~ee~~<br>~~ee~~|–––<br>~~—————~~<br>~~ee~~<br>|–––<br>~~—————~~<br>~~ee~~<br>|40<br>~~—————~~<br>~~ee~~<br>||
||Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-247)<br>~~ee~~|–––<br>|–––<br>|40<br>||
||Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-220)<br>~~eeee~~|–––<br>~~ee~~|–––<br>~~ee~~|62<br>~~ee~~||
|~~a~~<br>~~ee~~|**Parameter**<br>~~a~~<br>~~a~~<br>|**Min.**<br>|**Typ.**<br>|**Max.**<br>~~GO~~<br>|**Units**<br>~~GO~~<br>|**Conditions**<br>|
|---|---|---|---|---|---|---|
|V(BR)CES<br>~~a~~<br>~~ee~~|Collector-to-Emitter Breakdown Voltage<br>~~a~~<br>~~se~~<br>|600<br>~~se~~<br>|—<br>~~se~~<br>|—<br>~~se~~<br>~~GO~~<br>|V<br>~~se~~<br>~~GO~~<br>|VGE= 0V, IC= 100µA<br>~~se~~<br>|
|ΔV(BR)CES/ΔTJ<br>~~ee~~|Temperature Coeff. of Breakdown Voltage<br>~~ee~~|—<br>~~ee~~|0.30<br>~~ee~~|—<br>~~GO~~<br>~~ee~~|V/°C V<br>~~GO~~<br>~~ee~~|V/°C VGE= 0V, IC= 1mA (25°C-175°C)<br>~~ee~~|
|VCE(on)<br>~~ee~~<br>~~ee~~<br>~~es~~|Collector-to-Emitter Saturation Voltage<br><br>~~**e**e~~|—<br><br>~~a~~<br><br>~~a~~|1.60<br><br>~~a~~<br><br>|1.90<br>~~GO~~<br><br>~~a~~<br>~~e~~<br>|V<br>~~GO~~<br><br>~~ee~~<br>~~ee~~|IC= 24A, VGE= 15V, TJ= 25°C<br>|
|||—<br>~~ee~~<br>~~a~~|1.90<br>~~ee~~<br>~~ee~~|—<br>~~eee~~<br>~~ee~~||IC= 24A, VGE= 15V, TJ= 150°C|
|||—<br><br>~~a~~|2.0<br><br>~~ee~~|—<br>~~e~~<br>~~ee~~||IC= 24A, VGE= 15V, TJ= 175°C|
|VGE(th)<br>~~ee~~<br>~~es~~|Gate Threshold Voltage<br>~~**e**e~~|4.0<br><br>~~a ~~|—<br><br> ~~ee~~|6.5<br>~~e~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~|VCE= VGE, IC= 700µA|
|ΔVGE(th)/ΔTJ<br>~~ee~~<br>~~es~~|Threshold Voltage Temp. Coefficient<br>~~**e**e~~|—<br>|-18<br> ~~ee~~<br>~~G~~|—<br>~~ee ~~<br>~~G~~|mV/°C V<br> ~~ee~~<br>~~G~~|mV/°C VCE= VGE, IC= 1.0mA (25°C-175°C)<br>~~G~~|
|gfe<br><br>~~es~~<br>~~a ~~|Forward Transconductance<br>~~**e**e~~<br> ~~a~~|—|17|—|S|VCE= 50V, IC= 24A, PW = 80µs|
|ICES|Collector-to-Emitter Leakage Current|—|2.0|25|µA<br>|VGE= 0V, VCE= 600V|
|||—<br>~~a~~|775<br>~~a~~|—<br>~~a ~~||VGE= 0V, VCE= 600V, TJ= 175°C<br> ~~ee~~|
|IGES<br>~~EO~~|Gate-to-Emitter Leakage Current<br>~~EO~~|—<br>~~EO~~|—<br>~~EO~~|±100<br>~~EO~~|nA<br>~~EO~~|VGE= ±20V<br>~~EO~~|
|VFM<br>~~ER~~|Diode Forward Voltage Drop<br>~~ER~~|—<br>~~ER~~|1.8<br>~~ER~~|2.6<br>~~ER~~|V<br>~~ER~~|IF= 24A<br>~~ER~~|
|||—<br>~~ER~~<br>~~ee~~|1.28<br>~~ER~~<br>~~ee~~|—<br>~~ER~~<br>~~ee~~||IF= 24A, TJ= 175°C<br>~~ER~~|
2 ~~=~~
—
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## ~~TR~~
|~~a ~~|**Parameter**<br> ~~GO~~|**Min.**<br>~~GO~~|**Typ.**<br>~~GO~~|**Max**<br>~~GO~~|**Units**<br>~~GO~~|**Conditions**<br>~~GO~~|
|---|---|---|---|---|---|---|
|Qg<br>~~a~~<br>~~Rs~~|Total Gate Charge|—|50|75|nC|IC= 24A<br>VGE= 15V<br>VCC= 400V|
|g<br>Qge<br>~~Rs~~|Gate-to-Emitter Charge|—|13|20|||
|ge<br>Qgc<br>~~Rs~~<br>~~Rs~~|Gate-to-Collector Charge<br>~~Rs~~|—<br>~~Rs~~|21<br>~~Rs~~|31<br>~~Rs~~|||
|gc<br>Eon<br>~~Rs~~<br>~~Re~~|Turn-OnSwitchingLoss<br>~~Rs~~<br>~~Re~~|—<br>~~Rs~~<br>~~Re~~|115<br>~~Rs~~<br>~~Re~~|201<br>~~Rs~~<br>~~Re~~|µJ|IC= 24A, VCC= 400V, VGE=15V<br>RG= 10Ω, L = 200µH, LS= 150nH,<br>TJ= 25°C<br>Energy losses include tail & diode<br>reverse recovery|
|Eoff<br>~~se~~<br>~~es~~|Turn-Off Switching Loss<br>~~se~~|—<br>~~se~~|600<br>~~se~~|700<br>~~se~~|||
|Etotal<br>~~es~~<br>~~ee~~|TotalSwitchingLoss|—|715|901|||
|td(on)<br>~~es~~<br>~~ee~~<br>~~ee~~|Turn-On delay time|—|41|53|ns||
|d(on)<br>tr<br>~~ee~~<br>~~ee~~<br>~~ee~~|Rise time|—|22|31|||
|td(off)<br>~~ee~~<br>~~ee~~<br>~~Rs~~|Turn-Off delay time|—|104|115|||
|d(off)<br>tf<br>~~ee~~<br>~~Rs~~<br>~~ee~~|Fall time<br>~~ee~~|—<br>~~ee~~|29<br>~~ee~~|41<br>~~ee~~|||
|Eon<br>~~Rs~~<br>~~ee~~|Turn-On SwitchingLoss<br>~~ee~~|—<br>~~ee~~|420<br>~~ee~~|—<br>~~ee~~|µJ|IC= 24A, VCC= 400V, VGE=15V<br>RG= 10Ω, L = 200µH, LS= 150nH,<br>TJ= 175°C<br>Energy losses include tail & diode<br>reverse recovery|
|Eoff<br>~~ee~~<br>~~se~~<br>~~ee~~|Turn-Off Switching Loss<br>~~ee~~<br>~~se~~|—<br>~~ee~~<br>~~se~~|840<br>~~ee~~<br>~~se~~|—<br>~~ee~~<br>~~se~~|||
|Etotal<br>~~ee~~|Total Switching Loss|—|1260|—|||
|td(on)<br>~~ee~~<br>~~a~~<br>~~Rs~~|Turn-On delay time|—|40|—|ns||
|tr<br>~~Rs~~|Rise time|—|24|—|||
|td(off)<br>~~Rs~~<br>~~Rs~~<br>~~Rs~~|Turn-Off delay time<br>~~Rs~~|—<br>~~Rs~~|125<br>~~Rs~~|—<br>~~Rs~~|||
|d(off)<br>tf<br>~~Rs~~<br>~~Rs~~|Fall time<br>~~Rs~~|—<br>~~Rs~~|39<br>~~Rs~~|—<br>~~Rs~~|||
|Cies<br>~~Rs~~<br>~~sf~~|Input Capacitance<br>~~sf~~|—<br>~~sf~~|1490<br>~~sf~~|—<br>~~sf~~|pF|VGE= 0V<br>VCC= 30V<br>f = 1.0MHz|
|Coes<br>~~ee~~|Output Capacitance<br>~~ee~~|—<br>~~ee~~|129<br>~~ee~~|—<br>~~ee~~|||
|Cres<br>~~a~~|Reverse Transfer Capacitance|—|45|—|||
|RBSOA|Reverse Bias Safe Operating Area|FULL SQUARE||||TJ= 175°C, IC= 96A<br>VCC= 480V, Vp ≤ 600V<br>RG= 10Ω,VGE= +20V to 0V|
|SCSOA<br>~~a~~|Short Circuit Safe Operating Area|5.0|—|—|µs|VCC= 400V, Vp ≤ 600V<br>RG= 10Ω,VGE= +15V to 0V|
|Erec<br>~~a~~<br>~~es~~|Reverse Recovery Energy of the Diode<br>|—<br>|621<br><br>~~G~~|—<br>|µJ<br>|TJ= 175°C<br>VCC= 400V, IF= 24A, VGE= 15V,<br>Rg=10Ω,L=200µH, LS =150nH|
|trr<br>~~se~~<br>~~es~~|DiodeReverseRecoveryTime<br>~~se~~|—<br>~~se~~|89<br>~~se~~<br>~~G~~|—<br>~~se~~|ns<br>~~se~~||
|Irr<br>~~es~~|Peak Reverse RecoveryCurrent|—|37<br>~~G~~|—|A||
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IRGS/SL/B/P4640D/EPbF
## TGR
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70<br>60 RT<br>50<br>PINE}<br>40<br>PT [NE]<br>30<br>ANE<br>20 CA<br>100 aaanePEIN<br>25 50 75 100 125 150 175<br> TC (°C)<br>IC (A)<br>**----- End of picture text -----**<br>
**Fig. 1** - Maximum DC Collector Current vs. Case Temperature
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1000<br>100<br>10µsec<br>10<br>Sil Sch sti<br>100µsec<br>1 po 1msec<br>Tc = 25°C<br>DC<br>Tj = 175°C<br>Single Pulse<br>ME<br>0.1<br>1 10 100 1000 10000<br>VCE (V)<br>Fig. 3 - Forward SOA<br>TC = 25°C; TJ ≤ 175°C; VGE = 15V<br>90<br>80 | | | At |<br>70 V GE = 18V<br>VGE = 15V<br>60 VGE = 12V<br>| LAS<br>VGE = 10V<br>50 VGE = 8.0V<br>fe<br>40<br>PEL ye<br>30 a cee<br>20 n/a<br>10<br>PIT<br>0 | EET Ty 7<br>0 1 2 3 4 5 6 7 8<br> VCE (V)<br>ICE (A)<br>IC (A)<br>**----- End of picture text -----**<br>
**Fig. 5** - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs
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300<br>250 | | tf<br>200 Nop<br>a\Unem<br>150<br>| tt<br>PINT<br>100<br>\<br>50 SEEENG<br>EN<br>0<br>25 50 75 100 125 150 175<br> TC (°C)<br>Ptot (W)<br>**----- End of picture text -----**<br>
**Fig. 2** - Power Dissipation vs. Case Temperature
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1000<br>10 0<br>10<br>1<br>10 100 1000<br>VCE (V)<br>IC (A)<br>**----- End of picture text -----**<br>
**Fig. 4** - Reverse Bias SOA TJ = 175°C; VGE = 20V
**==> picture [194 x 197] intentionally omitted <==**
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9080 H/<br>70<br>VGE = 18V<br>60 | |TIN VGE = 15V<br>VGE = 12V<br>50<br>VGE = 10V<br>ES VGE = 8.0V<br>40 | | ft |<br>3020 nyifetapes<br>10<br>tT | tt<br>0 2/2D4<br>0 1 2 3 4 5 6 7 8<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>
**Fig. 6** - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs
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## TGR
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**----- Start of picture text -----**<br>
90<br>80 V GE = 18V Fane<br>VGE = 15V<br>70 VGE = 12V<br>VGE = 10V<br>60 VGE = 8.0V (nnn<br>50<br>40<br>30 n/a<br>20<br>ay Zeneee<br>10 CALE<br>0 AECL EI<br>0 1 2 3 4 5 6 7 8<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>
**==> picture [197 x 195] intentionally omitted <==**
**----- Start of picture text -----**<br>
120<br>|<br>100<br>80 -40°c J<br>25°C<br>175°C<br>6040 e/aAe<br>20<br>:<br>0 ZF| |<br>0.0 1.0 2.0 3.0<br> VF (V)<br>IF (A)<br>**----- End of picture text -----**<br>
**Fig. 8** - Typ. Diode Forward Voltage Drop Characteristics
**Fig. 7** - Typ. IGBT Output Characteristics TJ = 175°C; tp = 80µs
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20 20<br>181614 aa 181614 eaee<br>12 I CE = 12A 12 I CE = 12A<br>10 ICE = 24A 10 ICE = 24A<br>8 CAS I CE = 48A 8 219 I CE = 48A<br>6 6<br>4 hi 4 i}<br>2 2<br>i | ie a<br>0 ne 0 es<br>5 10 15 20 5 10 15 20<br> VGE (V) VGE (V)<br>Fig. 9 - Typical VCE vs. VGE Fig. 10 - Typical VCE vs. VGE<br>TJ = -40°C TJ = 25°C<br>20<br>120<br>18<br>16 ee 100 Ff]<br>14 TJ = 25°C<br>12 eel I CE = 12A 80 T . J = 175°C of<br>10 ee ICE = 24A pf<br>60<br>8 I CE = 48A<br>6 40<br>4<br>re aa<br>20<br>2<br>0 a Ae<br>0<br>5 10 15 20<br>0 5 10 15<br> VGE (V)<br> VGE (V)<br>Fig. 11 - Typical VCE vs. VGE CE vs. VGE vs. VGE GE Fig. 12 - Typ. Transfer Characteristics<br>TJ = 175°C J = 175°C = 175°C VCE = 50V; tp = 10µs<br>ICE (A)<br>VCE (V) VCE (V)<br>VCE (V)<br>**----- End of picture text -----**<br>
**Fig. 11** - Typical VCE vs. VGE CE vs. VGE vs. VGE GE TJ = 175°C J = 175°C = 175°C
5 ~~——~~
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TGR<br>**----- End of picture text -----**<br>
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1800<br>1600<br>1400<br>1200<br>EOFF<br>1000<br>800<br>EON<br>600<br>400<br>200<br>0<br>0 10 20 30 40 50 60<br>IC (A)<br>Energy (µJ)<br>**----- End of picture text -----**<br>
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1000<br>tdOFF<br>100<br>tdON<br>t F<br>10 tR<br>1<br>10 20 30 40 50<br>IC (A)<br>Swiching Time (ns)<br>**----- End of picture text -----**<br>
**Fig. 13** - Typ. Energy Loss vs. IC TJ = 175°C; L = 200µH; VCE = 400V, RG = 10 Ω ; VGE = 15V
**Fig. 14** - Typ. Switching Time vs. IC TJ = 175°C; L = 200µH; VCE = 400V, RG = 10 Ω ; VGE = 15V
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1600 1000<br>1400<br>1200 tdOFFOFF<br>EON<br>1000<br>EOFF<br>800600 100 tdONON |<br>400<br>200 tRR<br>0 10<br>0 25 50 75 100 125<br>0 25 50 75<br>Rg ( Ω ) RG ( Ω )<br>Fig. 15 - Typ. Energy Loss vs. RG G Fig. 16<br>= 175°C; L = 200µH; VCE = 400V, ICE = 24A; VGE = 15V CE = 400V, ICE = 24A; VGE = 15V = 400V, ICE = 24A; VGE = 15V CE = 24A; VGE = 15V = 24A; VGE = 15V GE = 15V = 15V TJ = 175°C; L = 200µH; VCEJ = 175°C; L = 200µH; VCE= 175°C; L = 200µH; VCECE = 400V, ICE = 24A; VGE = 15V<br>40<br>45<br>RG = 10 Ω<br>35 40<br>3530<br>30<br>RG = 22 Ω 30 F\i | |<br>25<br>25<br>RG = 47 Ω<br>20 20<br>RG = 100 Ω 15 Ph<br>15<br>10 Ffft<br>10 ae 5 PN | |<br>0 10 20 30 40 50 60<br>0 25 50 75<br>IF (A)<br>RG ( Ω)<br>Fig. 17 - Typ. Diode IRR vs. IF Fig. 18 - Typ. Diode IRR vs. RG<br> TJ = 175°C TJ = 175°C<br>Energy (µJ)<br>IRR (A)<br>Swiching Time (ns)<br>IRR (A)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
1000<br>tdOFFOFF<br>100 |<br>tdONON<br>t F<br>tRR<br>10<br>0 25 50 75 100 125<br>RG ( Ω )<br>Swiching Time (ns)<br>**----- End of picture text -----**<br>
**Fig. 16** - Typ. Switching Time vs. RG TJ = 175°C; L = 200µH; VCEJ = 175°C; L = 200µH; VCE= 175°C; L = 200µH; VCECE = 400V, ICE = 24A; VGE = 15V
**Fig. 15** - Typ. Energy Loss vs. RG G TJ = 175°C; L = 200µH; VCE = 400V, ICE = 24A; VGE = 15V CE = 400V, ICE = 24A; VGE = 15V = 400V, ICE = 24A; VGE = 15V CE = 24A; VGE = 15V = 24A; VGE = 15V GE = 15V = 15V
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**----- Start of picture text -----**<br>
45<br>ee<br>40<br>ee<br>3530 F\i | | |<br>25<br>inne<br>20<br>Ph ee<br>15<br>10 Ffft<br>5 FfPN | ff| |<br>0 25 50 75 100 125<br>RG ( Ω)<br>IRR (A)<br>**----- End of picture text -----**<br>
**Fig. 18** - Typ. Diode IRR vs. RG
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IRGS/SL/B/P4640D/EPbF ~~a~~
## ~~TGR~~
**==> picture [504 x 435] intentionally omitted <==**
**----- Start of picture text -----**<br>
45 4000<br>48A<br>40 es ee ee 3500 ee<br>35 10 Ω<br>3000<br>30 22 Ω<br>2500<br> 47 Ω<br>ae<br>25 100 Ω 24A<br>a 2000 eee<br>a A)<br>20<br>4 1500 pp<br>15<br>12A<br>be<br>10 ee ee ee 1000 Pp<br>5 ee ee ee 500 Pe<br>0 500 1000 1500 0 500 1000 1500<br>diF /dt (A/µs) diF /dt (A/µs)<br>Fig. 19 - Typ. Diode IRR vs. diF/dt Fig. 20 - Typ. Diode QRR vs. diF/dt<br>VCC = 400V; VGE = 15V; IF = 24A; TJ = 175°C VCC = 400V; VGE = 15V; TJ = 175°C<br>1000 16 280<br>14 240<br>800<br>tit Zl RG = 47G = 47= 47 47 Ω<br>RG =G == 10 Ω 12 200<br>600<br>RG = 22G = 22= 22 Ω 10 160<br>400 RG = 100G = 100= 100 100 Ω<br>8 120<br>|a<br>200<br>0 eittt 64 8040<br>0 10 20 30 40 50 60 8 10 12 14 16 18<br>IF (A) VGE (V)<br>Time (µs)<br>IRR (A)<br>QRR (nC)<br>Current (A)<br>**----- End of picture text -----**<br>
**==> picture [455 x 467] intentionally omitted <==**
**----- Start of picture text -----**<br>
1000 16<br>14<br>800<br>tit Zl RG = 47G = 47= 47 47 Ω<br>RG =G == 10 Ω 12<br>600<br>RG = 22G = 22= 22 Ω 10<br>400 RG = 100G = 100= 100 100 Ω<br>8<br>|a<br>200<br>ttt<br>0 eittt 464<br>0 10 20 30 40 50 60 8 10 12 14 16<br>IF (A) VGE (V)<br>Fig. 21 - Typ. Diode ERR vs. IF Fig. 22 - VGEGE vs. Short Circuit Time<br>TJ = 175°C VCC = 400V; TC = 25°C CC = 400V; TC = 25°C = 400V; TC = 25°C C = 25°C = 25°C<br>10000 16<br>14 VCES = 300V<br>cL VCES = 400VCES = 400V = 400V<br>12<br>1000 es Cies<br>Ti FF<br>10<br>8<br>100 \=I Coes 6 c Lafaf ==” 4008Vane<br>= —<br>N 4 CAEL<br>2<br>Cres<br>peeTT CECCCEEEETCETCE<br>10 0<br>0 20 40 60 80 100 0 5 10 15 20 25 30 35 40 45<br>VCE (V) Q G, Total Gate Charge (nC)<br>Fig. 23 - Typ. Capacitance vs. VCE Fig. 24 - Typical Gate Charge vs. VGE<br> VGE= 0V; f = 1MHz ICE = 24A; L = 600µH<br>Time (µs)<br>Capacitance (pF)<br>VGE, Gate-to-Emitter Voltage (V)<br>Energy (µJ)<br>**----- End of picture text -----**<br>
**Fig. 22** - VGEGE vs. Short Circuit Time VCC = 400V; TC = 25°C CC = 400V; TC = 25°C = 400V; TC = 25°C C = 25°C = 25°C
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**----- Start of picture text -----**<br>
16<br>14 VCES = 300V<br>cL VCES = 400VCES = 400V = 400V Wy<br>12<br>|<br>FF<br>10<br>8<br>6 c Lafaf ==” 4008Vane<br>4 CAEL<br>2<br>CECCCEEEETCETCE EEE<br>0<br>0 5 10 15 20 25 30 35 40 45 50 55<br>Q G, Total Gate Charge (nC)<br>VGE, Gate-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br>
**Fig. 24** - Typical Gate Charge vs. VGE
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~~TézR = Cinfineon~~
IRGS/SL/B/P4640D/EPbF ~~a~~
**==> picture [412 x 455] intentionally omitted <==**
**----- Start of picture text -----**<br>
1<br>D = 0.50<br>0 .2 0<br>Se dE e e ermaa<br>0.1<br>Sa 0.10 eeall | |<br>J{ntl 0.050.02 To at τ J τ J τ 1 τ 1 R 1 R 1 τ 2 τ R22 R 2 τ C τ C aill Ri (°C/W) 0.2568 0.000311 τ i (sec)<br>0.01 = 0.01 Ta Ci= Ci τ =i /τ Rii / Ri —— 0.3429 0.006347<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>Hl |<br>0.001<br>CoA ee Un |= Fr<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig. 25 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT-TO247 Pak)<br>10<br>1 D = 0.50<br>0.20<br>0.10<br>0.1 0.05<br>= 0.02 R 1 R1 R 2 R2 R 3 R3 Al Ri (°C/W) en τ i (sec)<br>0.01 0.01 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 τ C τ C 0.693 0.621 0.001222 0.005254<br>Ci= Ci= τ i / τ Ri i / Ri 0.307 0.038140<br>aii anil ee ee<br>0.001 SINGLE PULSE<br>Notes:<br>( THERMAL RESPONSE )<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.0001<br>they AeLt UECre |<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>
**Fig. 25 -** Maximum Transient Thermal Impedance, Junction-to-Case (IGBT-TO247 Pak)
**Fig. 26 -** Maximum Transient Thermal Impedance, Junction-to-Case (DIODE– TO-247 Pak)
## **Notes:**
- VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 10Ω.
- R θ is measured at TJ of approximately 90°C.
- Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
- Pulse width limited by maximum junction temperature.
- Values influenced by parasitic L and C in measurement.
- When mounted on 1” square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.http://www.irf.com/technical-info/appnotes/an-994.pdf
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~~TézR = Cinfineon~~
IRGS/SL/B/P4640D/EPbF ~~___lLLL_LLLLLLL~~
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**----- Start of picture text -----**<br>
1<br>D = 0.50 TT EAE EE<br>Serr<br>0.20<br>0.1<br>Lt 0.10 UTaTT || Iii<br>-_ 0.05 a<br>ch AA<br>0.02<br>Tie<br>0.01<br>0.01<br>= | SINGLE PULSE Lat τ J τ J τ 1 τ 1 R 1R 1 τ 2 τ R 2 2R 2 τ C τ C ||} Ri (°C/W) 0.2329 Ey 0.000234 τ i (sec)<br>0.001 aaa ( THERMAL RESPONSE ) Ci= Ci= ee τ i /τ Rii / Ri ee 0.3631 0.007009<br>Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.0001 fil me Tt<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT-TO-220Pak)<br>10<br>1 D = 0.50<br>a<br>0.20<br>0.10 Heise<br>0.1 0.05 = UE CHITA [ill<br>0.02 R1R1 R2R2 R3R 3 Ri (°C/W) τ i (sec)<br>0.01 —— 0.01 oh τ J τ J a τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 ee τ C τ C ee 0.476 0.647 0.000763 0.003028<br>Ci= Ci= τ i / τ Ri i / Ri 0.406 0.023686<br>Lem il + 4]<br>0.001<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.0001 a crererits ET<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>
**Fig. 28 -** Maximum Transient Thermal Impedance, Junction-to-Case (DIODE-TO-220Pak)
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IRGS/SL/B/P4640D/EPbF ~~___lLLL_LLLLLLL~~
## ~~TGR~~
**==> picture [264 x 58] intentionally omitted <==**
**----- Start of picture text -----**<br>
L<br>DUT VCC<br>0<br>1K<br>**----- End of picture text -----**<br>
**==> picture [202 x 106] intentionally omitted <==**
**----- Start of picture text -----**<br>
L<br>80 V +<br>- DUT VCC<br>Rg<br>**----- End of picture text -----**<br>
**Fig.C.T.1** - Gate Charge Circuit (turn-off)
**Fig.C.T.2** - RBSOA Circuit
**==> picture [95 x 127] intentionally omitted <==**
**----- Start of picture text -----**<br>
4X<br>DC VCC<br>DUT<br>RSH<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
diode clamp /<br>DUT<br>L<br>><br>-5V<br>DUT /<br>VCC<br>DRIVER :<br>Rg<br>**----- End of picture text -----**<br>
**Fig.C.T.3** - S.C. SOA Circuit
**Fig.C.T.4** - Switching Loss Circuit
**==> picture [171 x 100] intentionally omitted <==**
**----- Start of picture text -----**<br>
R = [VCC]<br>ICM<br>VCC<br>DUT<br>Rg<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
C force<br>100K<br>D1 22K<br>C sense<br>DUT<br>G force 0.0075µF<br>E sense<br>E force<br>**----- End of picture text -----**<br>
**Fig.C.T.5** - Resistive Load Circuit **Fig.C.T.6** - BVCES Filter Circuit
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IRGS/SL/B/P4640D/EPbF
**==> picture [190 x 232] intentionally omitted <==**
**----- Start of picture text -----**<br>
600 30<br>tf<br>500 25<br>90% ICE<br>400 20<br>CURRENICE VCE<br>300 CURREN 15<br>200 10<br>5% VCE<br>100 5<br>5% ICE<br>0 0<br>EOFF Loss<br>-100 -5<br>-0.40 0.10 0.60<br>Time(µs)<br> (V)<br>CE<br>V<br>**----- End of picture text -----**<br>
**Fig. WF1** - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4
**==> picture [189 x 235] intentionally omitted <==**
**----- Start of picture text -----**<br>
30<br>QRR<br>20<br>10<br>tRR<br>0<br>-10<br>Peak<br>10%<br>-20 IRR Peak<br>IRR<br>-30<br>-40<br>-50<br>-0.15 -0.05 0.05 0.15 0.25<br>time (µS)<br> (A)<br>IRR<br>**----- End of picture text -----**<br>
**Fig. WF3** - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4
**==> picture [191 x 233] intentionally omitted <==**
**----- Start of picture text -----**<br>
600 60<br>500 50<br>CURRVCE tr<br>400 40<br>ICE<br>300 CURREN 30<br>90% test<br>200 20<br>10% ICE<br>100 10<br>5% VCE<br>0 0<br>EON<br>-100 -10<br>11.70 11.90 12.10 12.30<br>Time (µs)<br> (V)<br>CE<br>V<br>**----- End of picture text -----**<br>
**Fig. WF2** - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4
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**----- Start of picture text -----**<br>
600 300<br>ICE<br>500 250<br>400 200<br>300 VCE 150<br>200 100<br>100 50<br>0 0<br>-100 -50<br>-5.00 0.00 5.00 10.00<br>time (µS)<br> (V) (A)<br>VCE ICE<br>**----- End of picture text -----**<br>
**Fig. WF4** - Typ. S.C. Waveform @ TJ = 150°C using Fig. CT.3
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**==> picture [155 x 37] intentionally omitted <==**
**----- Start of picture text -----**<br>
TEAR = infineon<br>**----- End of picture text -----**<br>
## D[2] -PAK (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
## D[2] -Pak (TO-263AB) Part Marking Information
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**----- Start of picture text -----**<br>
THIS IS AN IRF530S WITH<br>PART NUMBER<br>LOT CODE 8024 INTERNATIONAL<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S<br>IN THE ASSEMBLY LINE "L" LOGO<br>DATE CODE<br>YEAR 0 = 2000<br>ASSEMBLY<br>LOT CODE WEEK 02<br>LINE L<br>OR<br>PART NUMBER<br>INTERNATIONAL<br>RECTIFIER F530S<br>LOGO DATE CODE<br>P = DESIGNATES LEAD - FREE<br>PRODUCT (OPTIONAL)<br>ASSEMBLY<br>YEAR 0 = 2000<br>LOT CODE<br>: WEEK 02<br>A = ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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## ~~TGR~~
## TO-220AB Package Outline
(Dimensions are shown in millimeters (inches))
## TO-220AB Part Marking Information
E X A M P L E : T H IS IS A N IR F 1 0 1 0 L O T C O D E 1 7 8 9 A S S E M B L E D O N W W 1 9 , 2 0 0 0 IN T H E A S S E M B L Y L IN E "C "
N o t e : "Pin" ind ic aa t es sse "Lm eb aly lind - Fe pr e oe "s it io n
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**----- Start of picture text -----**<br>
P A R T N U M B E R<br>IN T E R N A T IO N A L<br>R E C T IF IE R<br>L O G O<br>D A T E C O D E<br>Y E A R 0 = 2 0 0 0<br>A S S E M B L Y<br>L O T C O D E W E E K 1 9<br>L IN E C<br>**----- End of picture text -----**<br>
TO-220AB package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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## ~~ay~~
## TO-262 Package Outline
Dimensions are shown in millimeters (inches)
## TO-262 Part Marking Information
**==> picture [288 x 192] intentionally omitted <==**
**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>INTERNATIONAL<br>ASSEMBLED ON WW 19, 1997 RECTIFIER<br>IN THE ASSEMBLY LINE "C" LOGO<br>DATE CODE<br>YEAR 7 = 1997<br>ASSEMBLY<br>LOT CODE WEEK 19<br>LINE C<br>OR<br>PART NUMBER<br>INTERNATIONAL<br>RECTIFIER<br>LOGO<br>DATE CODE<br>P = DESIGNATES LEAD-FREE<br>ASSEMBLY<br>LOT CODE PRODUCT (OPTIONAL)<br>YEAR 7 = 1997<br>WEEK 19<br>A = ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRGS/SL/B/P4640D/EPbF ~~a~~
**==> picture [155 x 37] intentionally omitted <==**
**----- Start of picture text -----**<br>
TEAR = infineon<br>**----- End of picture text -----**<br>
## TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
## TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
**==> picture [454 x 98] intentionally omitted <==**
**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRFPE30<br>WITH ASSEMBLY PART NUMBER<br>LOT CODE 5657 INTERNATIONAL Do<br>ASSEMBLED ON WW 35, 2001 RECTIFIER IRFPE30<br>LOGO 135H<br>IN THE ASSEMBLY LINE "H"<br>= 56 57<br>DATE CODE<br>ASSEMBLY YEAR 1 = 2001<br>Note: "P" in assembly line position<br>LOT CODE WEEK 35<br>indicates "Lead-Free"<br>LINE H<br>**----- End of picture text -----**<br>
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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~~TEAR = infineon~~
IRGS/SL/B/P4640D/EPbF ~~a~~
## TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
## TO-247AD Part Marking Information
**==> picture [398 x 90] intentionally omitted <==**
**----- Start of picture text -----**<br>
E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D -E<br>W IT H A S S E M B L Y P A R T N U M B E R<br>L O T C O D E 5 6 5 7 IN T E R N A T IO N A L men<br>A S S E M B L E D O N W W 3 5 , 2 0 0 0 R E C T IF IE R<br>L O G O I@R 0 3 5 H |<br>IN T H E A S S E M B L Y L IN E "H "<br>5 6 5 7<br>D A T E C O D E<br>A S S E M B L Y YE A R 0 = 2 0 0 0<br>N o te : "P " in a s s e m b ly lin e p o s itio n<br>L O T C O D E W E E K 3 5<br>in d ic a te s "L e a d -F re e "<br>L IN E H<br>**----- End of picture text -----**<br>
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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~~TGR~~
IRGS/SL/B/P4640D/EPbF ~~___lLLL_LLLLLLL~~
## D[2] Pak Tape & Reel Information
(Dimensions are shown in millimeters (inches))
**==> picture [420 x 159] intentionally omitted <==**
**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
FEED DIRECTION<br>**----- End of picture text -----**<br>
**==> picture [410 x 185] intentionally omitted <==**
**----- Start of picture text -----**<br>
13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173) MIN.<br> MAX.<br>30.40 (1.197)<br>NOTES : MAX.<br>1. COMFORMS TO EIA-418.<br>26.40 (1.039) 4<br>2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3. DIMENSION MEASURED @ HUB. 3<br>**----- End of picture text -----**<br>
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRGS/SL/B/P4640D/EPbF ~~nd~~
## ~~TGR~~
## **Qualification Information[† ]**
|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F)††||
|**Moisture Sensitivity Level**|D2Pak|MSL1|
||TO-220AB|N/A|
||TO-262|N/A|
||TO-247AC|N/A|
||TO-247AD|N/A|
|**RoHS Compliant**|Yes||
- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
- †† Applicable version of JEDEC standard at the time of product release.
**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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Submit Datasheet Feedback January 20, 2015 ~~OO~~
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
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When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
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We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
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