IRGP4069DPBF
IGBT, 76 A, 1.6 V, 268 W, 600 V, TO-247AC, 3 Pins
- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Power Dissipation: 268W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247AC
- Operating Temperature Max: 175°C
- Continuous Collector Current: 76A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.6V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 3.02 € |
| Current stock | 10+ |
| Lead time | 30 days |
## _**INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE**_
## IRGP4069DPbF IRGP4069D-EPbF
## **Features**
- Low VCE (ON) Trench IGBT Technology
- Low Switching Losses
- Maximum Junction Temperature 175 °C
- 5 μS short circuit SOA
- Square RBSOA
- 100% of The Parts Tested for ILM
- Positive VCE (ON) Temperature Coefficient
- Tight Parameter Distribution
- Lead Free Package
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C<br>VCES = 600V<br>I = 35A<br>C(Nominal)<br>G tSC ≥ 5μs, TJ(max) = 175°C<br>E VCE(on) typ. = 1.6V<br>n-channel<br>**----- End of picture text -----**<br>
## **Benefits**
- High Efficiency in a Wide Range of Applications
- Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses
- Rugged Transient Performance for Increased Reliability
- Excellent Current Sharing in Parallel Operation
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C C<br>G [C E] G [C E]<br>TO-247AC TO-247AD<br>IRGP4069DPbF IRGP4069D-EPbF<br>**----- End of picture text -----**<br>
|**G**|**C**|**E**|
|---|---|---|
|Gate|Collector|Emitter|
## **Absolute Maximum Ratings**
||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VCES<br>~~——{———~~|Collector-to-Emitter Voltage<br>~~——{———~~|600<br>~~——{———~~|V|
|IC@ TC =25°C<br>~~——{———~~|Continuous Collector Current<br>~~oe~~<br>~~——{———~~|76<br>50<br>35<br>105<br>140<br>76<br>50<br>140<br>~~oe~~<br>~~a~~<br>~~oo~~<br>~~——{———~~<br>~~SO~~<br>~~LS~~<br>~~a~~<br>~~LO~~|A|
|IC @TC= 100°C<br>~~——{———~~|ContinuousCollectorCurrent<br>~~a~~<br>~~——{———~~|||
|INOMINAL<br>~~——{———~~|Nominal Current<br>~~oo~~<br>~~——{———~~|||
|ICM<br>~~——{———~~|Pulse Collector Current,VGE= 15V<br>~~——{———~~|||
|ILM<br>~~——{———~~|Clamped Inductive Load Current,VGE= 20V<br>~~——{———~~<br>~~SO~~|||
|IF @TC= 25°C<br>~~——{———~~|DiodeContinous ForwardCurrent<br>~~——{———~~<br>~~LS~~|||
|IF @TC= 100°C<br>~~——{———~~|DiodeContinous ForwardCurrent<br>~~——{———~~<br>~~a~~|||
|IFM<br>~~——{———~~|Diode Maximum Forward Current<br>~~——{———~~<br>~~LO~~|||
|VGE<br>~~——{———~~|ContinuousGate-to-Emitter Voltage<br>~~——{———~~<br>~~oe~~<br>~~en~~|±20<br>±30<br>~~——{———~~<br>~~oe~~<br>~~en~~|V<br>~~en~~|
||Transient Gate-to-Emitter Voltage<br>~~en~~|||
|PD @TC= 25°C|Maximum Power Dissipation<br>~~ope~~<br>~~ee~~|268<br>134<br>~~ope~~<br>~~ee~~<br>~~ee~~|W<br>~~ee~~|
|PD@ TC =100°C|Maximum Power Dissipation<br>~~ee~~<br>~~ee~~|||
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range<br>~~ee~~|-55 to +175<br>300 (0.063 in. (1.6mm) from case)<br>~~ee~~<br>~~a~~<br>~~ON-NT-"-"—-—.——~~|°C<br>~~ON-NT-"-"—-—.——~~<br>~~EE~~|
|~~TT~~|Soldering Temperature, for 10 sec.<br>~~ee~~<br>~~a~~<br>~~TT~~<br>~~ON-NT-"-"—-—.——~~|||
|~~TT~~|MountingTorque, 6-32 or M3 Screw<br>~~ee~~<br>~~TT~~<br>~~ON-NT-"-"—-—.——~~|10lbf·in(1.1 N·m)<br>~~ee~~<br>~~ON-NT-"-"—-—.——~~|~~ON-NT-"-"—-—.——~~<br>~~EE~~|
www.irf.com 10/2/09
1
## IRGP4069DPbF/IRGP4069D-EPbF
## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**
||**Parameter**<br>~~a~~|**Min.**<br>~~DD~~|**Typ.**<br>~~DD~~|**Max.**<br>~~GD~~|**Units **<br>~~GD~~|**Conditions**<br>~~©~~|
|---|---|---|---|---|---|---|
|V(BR)CES|Collector-to-Emitter Breakdown Voltage<br>~~a~~<br>~~GO~~|600<br>~~DD~~<br>~~GO~~|—<br>~~DD~~<br>~~GO~~<br>~~a~~|—<br>~~GD~~<br>~~GO~~<br>~~NO~~|V<br>~~GD~~<br>~~GO~~<br>~~NO~~|VGE= 0V,IC= 100μA<br>~~GO~~<br>~~©~~<br>~~®~~|
|ΔV(BR)CES/ΔTJ|Temperature Coeff. of Breakdown Voltage<br>~~GO~~|—<br>~~GO~~|1.3<br>~~GO~~<br>~~a~~|—<br>~~GO~~<br>~~NO~~|mV/°C <br>~~GO~~<br>~~NO~~|VGE= 0V,IC= 1mA(25°C-175°C)<br>~~©~~<br>~~GO~~<br>~~®~~|
|VCE(on)|Collector-to-Emitter Saturation Voltage|—|1.6<br>~~a~~|1.85<br>~~NO~~|V<br>~~NO~~|IC= 35A,VGE= 15V,TJ= 25°C<br>~~®~~|
|||—|1.9<br>~~a~~|—||IC= 35A,VGE= 15V,TJ= 150°C<br>®|
|||—|2.0<br>~~fT~~|—<br>~~fT~~||IC= 35A,VGE= 15V,TJ= 175°C<br>~~®~~|
|VGE(th)|Gate Threshold Voltage<br>~~GO~~<br>~~a~~|4.0<br>~~GO~~|—<br>~~GO~~|6.5<br>~~GO~~<br>~~GO~~|V<br>~~GO~~<br>~~GO~~|VCE= VGE,IC= 1.0mA<br>~~GO~~|
|ΔVGE(th)/ΔTJ|Threshold Voltage temp. coefficient<br>~~GG~~<br>~~a~~|—<br>~~GG~~|-18<br>~~GG~~|—<br>~~GG~~<br>~~GO~~|mV/°C <br>~~GG~~<br>~~GO~~|VCE= VGE,IC= 1.0mA(25°C - 175°C)<br>~~GG~~|
|gfe|Forward Transconductance<br>~~a~~|—|25<br>~~GO~~|—<br>~~GO~~<br>~~GO~~|S<br>~~GO~~<br>~~GO~~|VCE= 50V,IC= 35A,PW = 60μs|
|ICES|Collector-to-Emitter Leakage Current<br>~~a~~<br>~~es~~<br>~~ee~~|—<br>~~es~~|1.0<br>~~GO~~<br>~~es~~|70<br>~~GO~~<br>~~GO~~|μA<br>~~GO~~<br>~~GO~~<br>~~_~~|VGE= 0V,VCE= 600V<br>~~——~~|
|||—<br>~~es~~<br>~~ee~~|770<br>~~es~~<br>~~PT~~<br>|—<br>~~PT~~<br>||VGE= 0V,VCE= 600V,TJ= 175°C<br>~~——~~<br>~~_~~|
|VFM|Diode Forward Voltage Drop<br>~~ee~~|—<br>~~ee~~|2.2<br>~~PT~~<br>|3.8<br>~~PT~~<br>|V<br>~~_~~|IF= 35A<br>~~_~~|
|||—<br>~~ee~~|1.4<br>~~PT~~<br><br>~~a~~|—<br>~~PT~~<br><br>~~a~~<br>~~OU~~||IF= 35A,TJ= 175°C<br>~~_~~|
|IGES|Gate-to-Emitter Leakage Current<br>~~ee~~<br>~~GD~~|—<br>~~ee ~~<br>~~GD~~|—<br>~~PT~~<br> <br>~~a~~<br>~~GD~~|±100<br>~~PT~~<br> <br>~~a~~<br>~~GD~~<br>~~OU~~|nA<br> ~~_~~<br>~~GD~~|VGE= ±20V<br>~~_~~<br>~~GD~~|
|**Switching Characteristics @ TJ = 25°C(unless otherwise specified)**<br>~~OU~~|||||||
||**Parameter**<br>~~a~~|**Min.**<br>~~I~~|**Typ.**<br>~~GO~~|**Max.**<br>~~GO~~|**Units**<br>~~GO~~|**Conditions**<br>~~GO~~|
|Qg|Total Gate Charge(turn-on)|—|69|104|nC|IC= 35A<br>VGE= 15V<br>VCC= 400V|
|Qge|Gate-to-Emitter Charge(turn-on)<br>~~a~~|—<br>~~a~~|18<br>~~a~~|27<br>~~a~~|||
|Qgc<br>~~a~~|Gate-to-Collector Charge(turn-on)<br>~~a~~<br>~~a~~|—<br>~~a~~<br>|29<br>~~a~~<br>|44<br>~~a~~<br>|||
|Eon<br>~~a~~|Turn-On SwitchingLoss<br>~~a~~<br>~~a~~|—<br>~~a~~<br>|390<br>~~a~~<br>|508<br>~~a~~<br>|μJ|IC= 35A, VCC= 400V, VGE= 15V<br>RG= 10Ω, L = 200μH, LS= 150nH, TJ= 25°C<br>Energylosses include tail & diode reverse recovery|
|Eoff<br>~~a~~|Turn-Off SwitchingLoss<br>~~aee~~|—<br>~~ee~~|632<br>~~ee~~|753<br>~~ee~~|||
|Etotal|Total SwitchingLoss|—|1022|1261|||
|td(on)|Turn-On delaytime<br>~~a~~|—<br>~~a~~|46<br>~~a~~|56<br>~~a~~|I<br>ns|IC= 35A, VCC= 400V, VGE= 15V<br>RG= 10Ω, L = 200μH, LS= 150nH, TJ= 25°C|
|tr|Rise time|—|33|42|||
|td(off)|Turn-Off delaytime<br>~~a~~|—<br>~~a~~|105<br>~~a~~|117<br>~~a~~|||
|tf|Fall time|—|44|54|||
|Eon|Turn-On SwitchingLoss<br>~~a~~|—<br>~~a~~|1013<br>~~a~~|—<br>~~a~~|I<br>μJ|IC= 35A, VCC= 400V, VGE=15V<br>RG=10Ω, L=200μH, LS=150nH, TJ= 175°C<br>Energylosses include tail & diode reverse recovery|
|Eoff|Turn-Off SwitchingLoss|—|929|—|||
|Etotal<br>~~a~~|Total SwitchingLoss<br>~~a~~<br>~~a~~|—<br>~~a~~<br>|1942<br>~~a~~<br>|—<br>~~a~~<br>|||
|td(on)<br>~~a~~|Turn-On delaytime<br>~~a~~<br>~~a~~|—<br>~~a~~<br>|43<br>~~a~~<br>|—<br>~~a~~<br>|I<br>ns|IC= 35A, VCC= 400V, VGE= 15V<br>RG= 10Ω, L = 200μH, LS= 150nH<br>TJ= 175°C|
|tr<br>~~a~~<br>~~a~~|Rise time<br>~~aa~~<br>~~a~~|—<br>~~a~~<br>|35<br>~~a~~<br>|—<br>~~a~~<br>|||
|td(off)<br>~~a~~|Turn-Off delaytime<br>~~a~~|—<br>|127<br>|—<br>|||
|tf<br>~~a~~<br>~~a~~|Fall time<br>~~aa~~<br>~~a~~|—<br>~~a~~<br>|61<br>~~a~~<br>|—<br>~~a~~<br>|||
|Cies<br><br>~~a~~|Input Capacitance<br>~~a~~<br>~~a~~|—<br>~~a~~<br>|2113<br>~~a~~<br>|—<br>~~a~~<br>|pF|VGE= 0V<br>VCC= 30V<br>f = 1.0Mhz|
|Coes<br>~~a~~<br>~~a~~|Output Capacitance<br>~~aa~~<br>~~a~~|—<br>~~a~~|197<br>~~a~~|—<br>~~a~~|||
|Cres<br>~~a~~|Reverse Transfer Capacitance<br>~~a~~|—|65|—|||
|RBSOA<br>~~a~~|Reverse Bias Safe Operating Area<br>~~a~~|FULL SQUARE||||TJ= 175°C, IC= 140A<br>VCC= 480V, Vp =600V<br>Rg= 10Ω,VGE= +20V to 0V|
|SCSOA<br>~~a~~|Short Circuit Safe Operating Area<br>~~a~~|5|—|—|μs|VCC= 400V, Vp =600V<br>Rg= 10Ω,VGE= +15V to 0V|
|Erec<br>~~a~~<br>~~a~~|Reverse RecoveryEnergyof the Diode<br>~~a~~<br>~~a~~|—<br>|304<br>|—<br>|μJ<br>|TJ= 175°C<br>VCC= 400V, IF= 35A<br>VGE= 15V,Rg= 10Ω,L =210μH,Ls= 150nH|
|trr<br>~~a~~<br>~~a~~|Diode Reverse RecoveryTime<br>~~a~~<br>~~a~~|—<br>|120<br>|—<br>|ns<br>||
|Irr<br>~~a~~|Peak Reverse RecoveryCurrent<br>~~aa~~|—<br>~~a~~|25<br>~~a~~|—<br>~~a~~|A<br>~~a~~||
## **Notes:**
VCC = 80% (VCES), VGE = 20V, L = 19μH, RG = 10 Ω .
Pulse width limited by max. junction temperature.
> Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
> R θ is measured at TJ of approximately 90°C.
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2
## IRGP4069DPbF/IRGP4069D-EPbF
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TER Rectifier<br>80<br>70 Ne<br>60<br>50 Pet INE Ef<br>40<br>30 \<br>FERNS<br>20<br>IN<br>10 Pf} | | | KA<br>0 rE LLIN<br>25 50 75 100 125 150 175<br> TC (°C)<br>IC (A)<br>**----- End of picture text -----**<br>
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300<br>250<br>200<br>NS<br>150<br>CASE<br>100<br>PRK<br>50<br>,<br>BREN<br>0<br>25 50 75 100 125 150 175<br> TC (°C)<br>Ptot (W)<br>**----- End of picture text -----**<br>
**Fig. 1** - Maximum DC Collector Current vs. Case Temperature
**Fig. 2** - Power Dissipation vs. Case Temperature
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1000<br>100<br>100μsec<br>10μsec<br>10 1msec<br>DC<br>1<br>Tc = 25°C<br>Tj = 175°C<br>Single Pulse i Ci<br>0.1<br>1 10 100 1000<br>VCE (V)<br>Fig. 3 - Forward SOA<br>TC = 25°C, TJ ≤ 175°C; VGE =15V<br>140<br>VGE = 18V<br>120 | ee V GE = 15V<br>VGE = 12V<br>100 m4 V GE = 10V<br>me VGE = 8.0V<br>80<br>|<br>60 | | Yer<br>40 | YY | |<br>20<br>fA<br>0 (ACCEL<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>IC (A)<br>**----- End of picture text -----**<br>
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1000<br>100<br>10<br>ell<br>1<br>10 100 1000<br>VCE (V)<br>IC (A)<br>**----- End of picture text -----**<br>
**Fig. 4** - Reverse Bias SOA TJ = 175°C; VGE =20V
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140<br>VGE = 18V<br>120 ya VGE = 15V<br>VGE = 12V<br>100 | [[fA] VGE = 10V<br>VGE = 8.0V<br>na”,<br>80<br>60 | YYvA<br>40 | Vl<br>20<br>|<br>-yLE<br>0 fTIT | |<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>
**Fig. 5** - Typ. IGBT Output Characteristics TJ = -40°C; tp = ≤ 60μs
**Fig. 6** - Typ. IGBT Output Characteristics TJ = 25°C; tp = ≤ 60μs
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3
## IRGP4069DPbF/IRGP4069D-EPbF
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140<br>VGE = 18V<br>120 V GE = 15V Jn<br>VGE = 12V<br>100 V GE = 10V Vy | |<br>VGE = 8.0V<br>80<br>60<br>| | AS |<br>40<br>20<br>aN<br>0 AL | | |<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>
**Fig. 7** - Typ. IGBT Output Characteristics TJ = 175°C; tp = ≤ 60μs
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20<br>18 PLT UT<br>PAT<br>16<br>PA<br>14<br>12 Felt I CE = 18A<br>10 | ICE = 35A<br>86 |nlaATTuy I CE = 70A<br>4 ee<br>2 ee | [A] ee ee<br>0 es eseee<br>5 10 15 20<br> VGE (V)<br>Fig. 9 - Typical VCE vs. VGE<br>TJ = -40°C<br>20<br>18<br>16 a<br>14<br>oe<br>12<br>cy ICE = 18A<br>10<br>ICE = 35A<br>8 I CE = 70A<br>6 7<br>4<br>aa<br>2<br>0 SS<br>5 10 15 20<br> VGE (V)<br>VCE (V)<br>VCE (V)<br>**----- End of picture text -----**<br>
**Fig. 11** - Typical VCE vs. VGE TJ = 175°C
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140<br>120 ie<br>100<br>ee oe<br>-40°C<br>80 25°C<br>175°C<br>60<br>a0,<br>40<br>20<br>s/o<br>0 LAF|<br>0.0 1.0 2.0 3.0 4.0<br> VF (V)<br>IF (A)<br>**----- End of picture text -----**<br>
**Fig. 8** - Typ. Diode Forward Characteristics tp = 80μs
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2018 i|<br>16<br>ee<br>14<br>12 ee<br>ICE = 18A<br>10 ee I CE = 35A<br>86 ||inde ICE = 70A<br>4 ik<br>2 a ae ee<br>0 eses ee<br>5 10 15 20<br> VGE (V)<br>Fig. 10 - Typical VCE vs. VGE<br>TJ = 25°C<br>140<br>120<br>oe<br>TJ = 25°C<br>100<br>SRRREeO/ 48<br>80<br>Sann0//400 TJ = 175°C<br>60<br>/<br>40<br>20<br>San7 An00n8<br>0 EPZARREEeE<br>4 5 6 7 8 9 10 11 12 13 14<br> VGE, Gate-to-Emitter Voltage (V)<br>VCE (V)<br>IC, Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br>
**Fig. 12** - Typ. Transfer Characteristics VCE = 50V; tp = 60μs
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4
IRGP4069DPbF/IRGP4069D-EPbF
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TER Rectifier<br>4000<br>3500<br>3000 FEE<br>2500 //)<br>EON<br>2000 pA<br>1500<br>EOFF<br>1000500 TaZ<br>aan<br>0<br>0 10 20 30 40 50 60 70<br>IC (A)<br>Fig. 13 - Typ. Energy Loss vs. ICC<br>TJ = 175°C; L = 200μH; VCE = 400V, RG = 10J = 175°C; L = 200μH; VCE = 400V, RG = 10 = 175°C; L = 200μH; VCE = 400V, RG = 10CE = 400V, RG = 10= 400V, RG = 10G = 10= 10 Ω ; VGE GE = 15V<br>3000<br>2500<br>EON<br>2000 ow<br>EOFF<br>1500 waa<br>1000<br>{~<br>500 KL ft |<br>0 25 50 75 100<br>Rg ( Ω )<br>Fig. 15 - Typ. Energy Loss vs. RGG<br>TJ = 175°C; L = 210μH; VCE = 400V, ICE = 35A; VGE J = 175°C; L = 210μH; VCE = 400V, ICE = 35A; VGE = 175°C; L = 210μH; VCE = 400V, ICE = 35A; VGE CE = 400V, ICE = 35A; VGE = 400V, ICE = 35A; VGE CE = 35A; VGE = 35A; VGE GE = 15V<br>35<br>RG = 10 Ω<br>30<br>RQREEE<br>25 R G = 22 Ω CTT<br>20 RG = 47 Ω =<br>SS<br>15<br>RG = P 100 | Ω fr<br>ttt<br>10<br>10 20 30 40 50 60 70<br>IF (A)<br>Energy (μJ)<br>Energy (μJ)<br>IRR (A)<br>**----- End of picture text -----**<br>
**Fig. 13** - Typ. Energy Loss vs. ICC TJ = 175°C; L = 200μH; VCE = 400V, RG = 10J = 175°C; L = 200μH; VCE = 400V, RG = 10 = 175°C; L = 200μH; VCE = 400V, RG = 10CE = 400V, RG = 10= 400V, RG = 10G = 10= 10 Ω ; VGE GE = 15V
**Fig. 15** - Typ. Energy Loss vs. RGG TJ = 175°C; L = 210μH; VCE = 400V, ICE = 35A; VGE J = 175°C; L = 210μH; VCE = 400V, ICE = 35A; VGE = 175°C; L = 210μH; VCE = 400V, ICE = 35A; VGE CE = 400V, ICE = 35A; VGE = 400V, ICE = 35A; VGE CE = 35A; VGE = 35A; VGE GE = 15V
**Fig. 17** - Typ. Diode IRR vs. IF TJ = 175°C
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1000 TTT yyy<br>ne td OFF<br>100 pooeeee<br>tF<br>—~prt<br>tdON<br>it<br>tR<br>PEE4eeeee<br>10<br>0 10 20 30 40 50 60 70<br>IC (A)<br>Fig. 14 - Typ. Switching Time vs. ICC<br> = 175°C; L = 200μH; VCE = 400V, RG = 10CE = 400V, RG = 10= 400V, RG = 10G = 10= 10 Ω ; VGE GE = 15V<br>1000<br>Fe<br>tdOFF<br>100<br>==ee tF ee ee a eee<br>tdON<br>tR<br>10 pp<br>0 10 20 30 40 50<br>RG ( Ω )<br>Swiching Time (ns)<br>Swiching Time (ns)<br>**----- End of picture text -----**<br>
**Fig. 14** - Typ. Switching Time vs. ICC TJ = 175°C; L = 200μH; VCE = 400V, RG = 10CE = 400V, RG = 10= 400V, RG = 10G = 10= 10 Ω ; VGE GE = 15V
**Fig. 16** - Typ. Switching Time vs. RG TJ = 175°C; L = 210μH; VCE = 400V, ICE = 35A; VGE = 15V
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26<br>24<br>22 AL TT [I<br>nema<br>20<br>Ne<br>18 aN<br>16<br>| |<br>EStN<br>14<br>0 20 40 60 80 100<br>RG ( Ω)<br>IRR (A)<br>**----- End of picture text -----**<br>
**Fig. 18** - Typ. Diode IRR vs. RG TJ = 175°C
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5
## IRGP4069DPbF/IRGP4069D-EPbF
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26<br>24<br>P| | pee<br>22<br>ae<br>20<br>|A | |<br>18<br>Yi | | |<br>16 /| | | ft<br>14 ye] of | |<br>200 300 400 500 600 700<br>diF /dt (A/μs)<br>IRR (A)<br>**----- End of picture text -----**<br>
**Fig. 19** - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 35A; TJ = 175°C
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2500<br>2250<br>pitty 10 Ω<br>2000 35A<br>70A<br> 22 Ω<br>1750 hea<br>LA \<br> 47 Ω<br>18A<br>1500<br>MA ST<br>100 Ω<br>1250 A<br>1000 PEELEE LL<br>100 200 300 400 500 600 700 800 900<br>diF /dt (A/μs)<br>QRR (nC)<br>**----- End of picture text -----**<br>
**Fig. 20** - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C
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400<br>RG = 10 Ω<br>350 pt | |<br>300 | | | pt RG = 22 + Ω<br>250<br>Pannen<br>RG = 47 Ω<br>ean<br>200<br>150 - RG = 100 Ω<br>endscan<br>100<br>10 20 30 40 50 60 70<br>IF (A)<br>Fig. 21 - Typ. Diode ERR vs. IF<br>TJ = 175°C<br>10000<br>Cies<br>1000<br>$e<br>Nae<br>Coes<br>100<br>CiSS=<br>Cres<br>ee<br>10 ed _|<br>0 100 200 300 400 500<br>VCE (V)<br>Energy (μJ)<br>Capacitance (pF)<br>**----- End of picture text -----**<br>
**Fig. 23** - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
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20 300<br>Isc<br>15 225<br>Tsc<br>10 150<br>5 75<br>0 0<br>8 10 12 14 16 18<br>VGE (V)<br>Fig. 22 - VGE vs. Short Circuit Time<br>VCC = 400V; TC = 25°C<br>16<br>14 V CES = 400V<br>VCES = 300V<br>12<br>10<br>a<br>8<br>a<br>6<br>4<br>VEEP<br>2 Ae<br>0 FEE<br>0 10 20 30 40 50 60 70<br>Q G, Total Gate Charge (nC)<br>Time (μs)<br>VGE, Gate-to-Emitter Voltage (V)<br>Current (A)<br>**----- End of picture text -----**<br>
**Fig. 24** - Typical Gate Charge vs. VGE ICE = 35A; L = 740μH
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6
IRGP4069DPbF/IRGP4069D-EPbF
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**----- Start of picture text -----**<br>
1<br>a er<br>D = 0.50<br>eta TT TT TTI<br>ery<br>0.20<br>0.1 eee ene cael<br>0.10<br>aar 0.05 τ J τ Jem J cme R 1R1 oie R 2R2 den R 3R3 R 4 R4 τ C τ Ri 0.01041 0.000006(°C/W) τ i (sec) LH CH<br>0.01 — 0.01 0.02 [ee] ee)LU [TI] | τ 1 Ci= τ to 1 Ci τ i / Rii / Ri t τ 2 τ 2 LL τ 3 τ 3 Lb τ 4 τ 4 0.15911 0.23643 0.0020350.15465 0.000142 0.013806 |] |<br>a 4 OG OO GO 6 OO<br>| SINGLE PULSE ee eee ee eee Notes: 0 re ee<br>1. Duty Factor D = t1/t2<br>LZ ( THERMAL RESPONSE ) a Baill<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001 Gini i ll<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)<br>10<br>A OQ OO GG 6 GG OO<br>1 A<br>D = 0.50<br>0.20 ee<br>0.1 mn 0.10 a > gl |<br>0.05 R1R1 R2R2 R3R3 R4R4 Ri (°C/W) τ i (sec)<br>ee 0.02 τ J τ ieee J τ C τ 0.01716 0.000031<br>0.01 0.01 τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 τ 4 τ 4 0.35875 0.41334 0.004192 0.000517<br>— Se er TE PT<br>a a Oo Ci= Ci τ i / Ri i / Ri a 0.20121 0.024392<br>Notes:<br>0.001 ea LL<br>SINGLE PULSE 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>— ( THERMAL RESPONSE ) a H<br>er<br>0.0001 ee eee eel<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>
**Fig. 26.** Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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7
## IRGP4069DPbF/IRGP4069D-EPbF
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L<br>DUT VCC<br>0<br>1K<br>**----- End of picture text -----**<br>
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L<br>80 V +<br>- DUT VCC<br>Rg<br>**----- End of picture text -----**<br>
**Fig.C.T.1** - Gate Charge Circuit (turn-off)
**Fig.C.T.2** - RBSOA Circuit
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4X<br>DC VCC<br>DUT<br>**----- End of picture text -----**<br>
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diode clamp /<br>DUT<br>L<br>_ :<br>-5V<br>DUT /<br>VCC<br>DRIVER<br>|<br>Rg<br>**----- End of picture text -----**<br>
SCSOA
**Fig.C.T.3** - S.C. SOA Circuit
**Fig.C.T.4** - Switching Loss Circuit
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R = [VCC]<br>ICM<br>VCC<br>DUT<br>Rg<br>**----- End of picture text -----**<br>
**Fig.C.T.5** - Resistive Load Circuit
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C force<br>100K<br>D1 22K<br>C sense<br>DUT<br>G force 0.0075μF<br>E sense<br>E force<br>**----- End of picture text -----**<br>
**Fig.C.T.6** - BVCES Filter Circuit
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8
IRGP4069DPbF/IRGP4069D-EPbF
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600 60 600 60<br>TEST<br>tf CURRENT<br>500 50 500 a ae 50<br>tr<br>400 40 400 40<br>90% ICE<br>300 30 300 30<br>—— AE lt<br>90% test<br>current<br>200 20 200 20<br>5% VCE 10% test 5% V CE<br>100 10 100 10<br>5% ICE current<br>0 Ke 0 0 ia 0<br>Eon<br>Eoff Loss Loss<br>-100 -10<br>-100 puna dine -10<br>-0.5 0 0.5 1 1.5 2<br>6.4 6.6 6.8 7 7.2<br>time(µs)<br>time (µs)<br>Fig. WF1 - Typ. Turn-off Loss Waveform Fig. WF2 - Typ. Turn-on Loss Waveform<br>@ TJ = 175°C using Fig. CT.4 @ TJ = 175°C using Fig. CT.4<br>40 700 350<br>ICE<br>QRR 600 300<br>30<br>tRR 500 250<br>20 ren A<br>400 200<br>10<br>VCE<br>300 150<br>0 an yee ipy<br>200 100<br>10%<br>-10 Peak<br>Peak<br>IRR IRR 100 50<br>-20 AS} 0 Ep 0<br>-30 en A -100 |ce -50<br>-0.3 -0.2 -0.1 0 0.1 0.2 -4.5 0.5 5.5 10.5<br>time (µS) Time (uS)<br> (V) (A) (V) (A)<br>VCE ICE VCE ICE<br> (V)F (A)<br>V Vce (V) ICE<br>**----- End of picture text -----**<br>
**Fig. WF3** - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4
**Fig. WF4** - Typ. S.C. Waveform @ TJ = 25°C using Fig. CT.3
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9
## IRGP4069DPbF/IRGP4069D-EPbF
TO-247AC package is not recommended for Surface Mount Application.
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10
## IRGP4069DPbF/IRGP4069D-EPbF
TO-247AD package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site.
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 10/09
www.irf.com
11
Updated at February 9, 2023
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