Image not available
Illustrative purposes only
IRGP4068D-EPBF
IGBT, 96 A, 1.65 V, 330 W, 600 V, TO-247AD, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Power Dissipation: 330W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247AD
- Operating Temperature Max: 175°C
- Continuous Collector Current: 96A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.65V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 4.79 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## _**INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS**_ ## IRGP4068DPbF IRGP4068D-EPbF ## **Features** - Low VCE (ON) Trench IGBT Technology - Low Switching Losses - Maximum Junction temperature 175 °C - 5 μS short circuit SOA - Square RBSOA - 100% of the parts tested for ILM - Positive VCE (ON) Temperature co-efficient - Ultra-low VF Hyperfast Diode - Tight parameter distribution **==> picture [264 x 116] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>VCES = 600V<br>IC = 48A, TC = 100°C<br>G tSC ≥ 5μs, TJ(max) = 175°C<br>E VCE(on) typ. = 1.65V<br>n-channel<br>**----- End of picture text -----**<br> - Lead Free Package ## **Benefits** - Device optimized for induction heating and soft switching applications - High Efficiency due to Low VCE(on), Low Switching Losses and Ultra-low VF - Rugged transient Performance for increased reliability - Excellent Current sharing in parallel operation - Low EMI C C[E] G[C] G[C E] TO-247AC TO-247AD IRGP4068DPbF IRGP4068D-EPbF **G C E** Gate Collector Emitter Gate ## **Absolute Maximum Ratings** ||**Parameter**|**Max.**|**Units**| |---|---|---|---| |VCES|Collector-to-Emitter Voltage<br>~~=~~|600<br>~~=~~|V<br>~~=~~| |IC@ TC =25°C|Continuous Collector Current<br>~~=~~|96<br>48<br>144<br>192<br>8.0<br>175<br>100<br>~~=~~<br>~~a~~<br>~~=~~<br>~~—~~<br>~~LC~~<br>~~a~~<br>~~TO~~<br>~~LO~~|A<br>~~=~~<br>~~a~~<br>~~=~~| |IC @TC= 100°C|ContinuousCollectorCurrent<br>~~a~~||| |ICM|Pulse Collector Current,VGE= 15V<br>~~=~~||| |ILM|Clamped Inductive Load Current,VGE= 20V<br>~~LC~~||| |IF @TC= 160°C|Diode Continous Forward Current<br>~~a~~||| |IFSM|Diode Non Repetitive Peak Surge Current @ TJ= 25°C<br>~~TO~~||| |IFRM@Tc = 100°C|Diode Repetitive Peak Forward Current at tp=10μs<br>~~LO~~||| |VGE|Continuous Gate-to-Emitter Voltage<br>~~LO~~<br>~~eee~~<br>~~ee~~|±20<br>±30<br>~~LO~~<br>~~eee~~<br>~~ee~~<br>~~ee~~|V<br>~~ee~~| ||TransientGate-to-Emitter Voltage<br>~~ee~~<br>~~es ee~~||| |PD@ TC =25°C|Maximum Power Dissipation<br>~~ee~~<br>~~es ee~~|330<br>170<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|W<br>~~ee~~| |PD@ TC =100°C<br>~~TT~~|Maximum Power Dissipation<br>~~es ee~~<br>~~TT~~||| |TJ<br>TSTG<br>~~TT~~|Operating Junction and<br>Storage Temperature Range<br>~~es ee~~<br>~~ee~~<br>~~TT~~|-55 to +175<br>300(0.063 in.(1.6mm)from case)<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ON~~<br>~~-nr-n-.-"~~|°C| |~~TT~~|SolderingTemperature,for 10 sec.<br>~~TTON~~||| |~~TT~~|Mounting Torque, 6-32 or M3 Screw<br>~~TTON~~<br>~~IKE~~|10 lbf·in (1.1 N·m)<br>~~ee~~<br>~~ON~~<br>~~-nr-n-.-"~~<br>~~IKE~~|~~IKE~~| ## **Thermal Resistance** ||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units**| |---|---|---|---|---|---| |RθJC (IGBT)|Thermal Resistance Junction-to-Case-(each IGBT)|–––|–––|0.45<br>2.0<br>–––<br>40|°C/W| |RθJC (Diode)|Thermal Resistance Junction-to-Case-(each Diode)|–––|–––||| |RθCS|Thermal Resistance,Case-to-Sink(flat, greased surface)|–––|0.24||| |RθJA|Thermal Resistance,Junction-to-Ambient(typical socket mount)|–––|–––||| www.irf.com 1 07/27/09 ## IRGP4068DPbF/IRGP4068D-EPbF ## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** |V(BR)CES<br>ΔV(BR)CES/ΔTJ|**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units Conditions**<br>**Ref.Fig**<br>Collector-to-Emitter Breakdown Voltage<br>600<br>—<br>—<br>V<br>VGE= 0V,IC= 100μA<br>CT6<br>Temperature Coeff. of Breakdown Voltage<br>—<br>0.30<br>—<br>V/°C VGE= 0V,IC= 1mA(25°C-175°C)<br>CT6<br>—<br>1.65<br>2.14<br>IC= 48A,VGE= 15V,TJ= 25°C<br>4,5,6<br>~~a~~<br>~~DD I CO~~<br>~~GO~~<br>~~ID IDOD~~<br>~~GO~~<br>~~OD GO GO~~<br>~~a~~|**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units Conditions**<br>**Ref.Fig**<br>Collector-to-Emitter Breakdown Voltage<br>600<br>—<br>—<br>V<br>VGE= 0V,IC= 100μA<br>CT6<br>Temperature Coeff. of Breakdown Voltage<br>—<br>0.30<br>—<br>V/°C VGE= 0V,IC= 1mA(25°C-175°C)<br>CT6<br>—<br>1.65<br>2.14<br>IC= 48A,VGE= 15V,TJ= 25°C<br>4,5,6<br>~~a~~<br>~~DD I CO~~<br>~~GO~~<br>~~ID IDOD~~<br>~~GO~~<br>~~OD GO GO~~<br>~~a~~|**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units Conditions**<br>**Ref.Fig**<br>Collector-to-Emitter Breakdown Voltage<br>600<br>—<br>—<br>V<br>VGE= 0V,IC= 100μA<br>CT6<br>Temperature Coeff. of Breakdown Voltage<br>—<br>0.30<br>—<br>V/°C VGE= 0V,IC= 1mA(25°C-175°C)<br>CT6<br>—<br>1.65<br>2.14<br>IC= 48A,VGE= 15V,TJ= 25°C<br>4,5,6<br>~~a~~<br>~~DD I CO~~<br>~~GO~~<br>~~ID IDOD~~<br>~~GO~~<br>~~OD GO GO~~<br>~~a~~| |---|---|---|---| |VCE(on)|Collector-to-Emitter Saturation Voltage<br>—<br>2.0<br>—<br>V<br>~~PT~~|IC= 48A,VGE= 15V,TJ= 150°C|8,9,10| |VGE(th)<br>gfe<br>ICES|—<br>2.05<br>—<br>IC= 48A,VGE= 15V,TJ= 175°C<br>Gate Threshold Voltage<br>4.0<br>—<br>6.5<br>V<br>VCE= VGE,IC= 1.4mA<br>8,9,10,11,20<br>Forward Transconductance<br>—<br>32<br>—<br>S<br>VCE= 50V,IC= 48A,PW = 80μs<br>Collector-to-Emitter Leakage Current<br>—<br>1.0<br>150<br>μA<br>VGE= 0V,VCE= 600V<br>—<br>450<br>1000<br>VGE= 0V,VCE= 600V,TJ= 175°C<br>~~PT~~<br>~~GO~~<br>~~GO~~<br>~~GO GO~~<br>~~CP~~<br>~~rrrrrrrr———.C C ss |~~<br>~~Se~~<br>~~PT~~||| |VFM<br>IGES|Diode Forward Voltage Drop<br>—<br>0.96<br>1.05<br>V<br>IF= 8.0A<br>7<br>—<br>0.81<br>0.86<br>IF= 8.0A,TJ= 150°C<br>Gate-to-Emitter Leakage Current<br>—<br>—<br>±100<br>nA<br>VGE= ±20V<br>~~ES~~<br>~~a~~<br>~~a~~<br>~~GD IDONGO~~||| |**Switching Characteristics @ T**|**Characteristics @ TJ = 25°C(unless otherwise specified)**||| |Qg<br>Qge|**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units**<br>Total Gate Charge(turn-on)<br>—<br>95<br>140<br>Gate-to-Emitter Charge(turn-on)<br>—<br>28<br>42<br>nC<br>~~aee~~|IC= 48A<br>VGE= 15V<br>**Conditions**|**Ref.Fig**<br>18<br>CT1| |Qgc|Gate-to-Collector Charge(turn-on)<br>—<br>35<br>53<br>~~ee~~|VCC= 400V|| |||IC= 48A, VCC= 400V, VGE= 15V|| |Eoff|Turn-Off Switching Loss<br>—<br>1275<br>1481<br>μJ|RG= 10Ω, L = 200μH,TJ= 25°C|CT4| |||Energylosses include tail|| |td(off)|Turn-Off delaytime<br>—<br>145<br>176<br>ns|IC= 48A, VCC= 400V, VGE= 15V|| |tf|Fall time<br>—<br>35<br>46<br>~~ee~~|RG= 10Ω,L = 200μH,TJ= 25°C|| |||IC= 48A, VCC= 400V, VGE= 15V|| |Eoff|Turn-Off Switching Loss<br>—<br>1585<br>—<br>μJ|RG= 10Ω, L = 200μH,TJ= 175°C|CT4| |||Energylosses include tail|| |td(off)|Turn-Off delaytime<br>—<br>165<br>—<br>ns|IC= 48A, VCC= 400V, VGE= 15V|WF1| |tf|Fall time<br>—<br>45<br>—<br>~~ee~~|RG=10Ω,L=200μH,TJ= 175°C|| |Cies|Input Capacitance<br>—<br>3025<br>—<br>~~a~~|VGE= 0V|17| |Coes|Output Capacitance<br>—<br>245<br>—<br>pF<br>~~ee~~|VCC= 30V|| |Cres|Reverse Transfer Capacitance<br>—<br>90<br>—<br>~~ee~~|f = 1.0Mhz|| |||TJ= 175°C, IC= 192A|3| |RBSOA|Reverse Bias Safe Operating Area<br>FULL SQUARE|VCC= 480V, Vp =600V|CT2| |||Rg= 10Ω,VGE= +20V to 0V|| |SCSOA|Short Circuit Safe Operating Area<br>5<br>—<br>—<br>μs|VCC= 400V, Vp =600V|16, CT3| |||Rg= 10Ω,VGE= +15V to 0V|WF2| ## **Notes:** VCC = 80% (VCES), VGE = 20V, L = 200μH, RG = 10 Ω . Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. fsw = 20KHz, refer to figure 19. Sinusoidal half wave, t=10ms. www.irf.com 2 **==> picture [540 x 223] intentionally omitted <==** **----- Start of picture text -----**<br> International IRGP4068DPbF/IRGP4068D-EPbF<br>TOR Rectifier<br>10090 ee 350 =<br>300<br>80<br>70 rE ALLLLL, 250 \<br>NE | PN<br>60<br>50 Pt+NtN Py 200 PENEE<br>40 TPE KELL, 150 PP EINE EE<br>30<br>TINE 100 PT LIN EL<br>20<br>See eNee 50 Pie LIN LI<br>10 TFL ELN TL<br>0 TOE ELI 0 Pit} EEN<br>0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200<br> TC (°C) TC (°C)<br>Ptot (W)<br>IC (A)<br>**----- End of picture text -----**<br> **Fig. 1** - Maximum DC Collector Current vs. Case Temperature **==> picture [205 x 432] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>a a<br>100<br>10<br>Pt<br>pe<br>1 ee<br>10 100 1000<br>VCE (V)<br>Fig. 3 - Reverse Bias SOA<br>TJ = 175°C; VGE = 20V<br>200<br>180 Ty<br>160 P| RSS<br>VGE = 18V<br>140 VGE = 15V<br>VGE = 12V<br>120<br>VGE = 10V<br>HAS VGE = 8.0V<br>100<br>80 re Zt 4}<br>60 IZ Tt _t<br>40 a<br>20 7 (ae<br>0 STr_L_f_<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>IC (A)<br>**----- End of picture text -----**<br> **Fig. 5** - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80μs **Fig. 2** - Power Dissipation vs. Case Temperature **==> picture [199 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>180<br>160 L—-< VGE = 18V<br>VGE = 15V<br>140<br>VGE = 12V<br>120 VGE = 10V<br>VGE = 8.0V<br>100<br>80<br>60 htt +<br>40<br>20 ss<br>0 (AAS SE<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br> **Fig. 4** - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80μs **==> picture [199 x 198] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>180 VGE = 18V T7711<br>VGE = 15V<br>160 VGE = 12V Aa<br>VGE = 10V<br>140<br>VGE = 8.0V<br>120<br>eS<br>100<br>80 y/o<br>60 WAS<br>40 n/a<br>20 2<br>0 PAL<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br> **Fig. 6** - Typ. IGBT Output Characteristics TJ = 175°C; tp = 80μs www.irf.com 3 ## IRGP4068DPbF/IRGP4068D-EPbF **Fig. 7** - Typ. Diode Forward Voltage Drop Characteristics **==> picture [205 x 422] intentionally omitted <==** **----- Start of picture text -----**<br> 2018 PFi ttf<br>161412 |i| | I CE = 24A<br>10 mie ICE = 48A<br>86 |nineiE I CE = 96A<br>4 a a<br>2 PLAS<br>0 es ee<br>5 10 15 20<br> VGE (V)<br>Fig. 9 - Typical VCE vs. VGE<br>TJ = 25°C<br>200<br>180<br>as TJ = 25°C<br>160 T = 175°C<br>J<br>140 po<br>120<br>100 es e/a<br>80<br>a<br>60 a ee (ee<br>40 oe so<br>20<br>0 FT—EOPa<br>0 5 10 15<br> VGE (V)<br>VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br> **Fig. 11** - Typ. Transfer Characteristics VCE = 50V; tp = 10μs **==> picture [208 x 659] intentionally omitted <==** **----- Start of picture text -----**<br> 2018 eeee<br>16<br>14<br>a<br>12 | I = 24A<br>CE<br>10 ICE = 48A<br>8 I CE = 96A<br>6<br>4<br>2 ee<br>0<br>a<br>5 10 15 20<br> VGE (V)<br>Fig. 8 - Typical VCE vs. VGE<br>TJ = -40°C<br>2018 neee<br>16 a<br>1412 Fett I CE = 24A<br>10 man) ICE = 48A<br>86 |triLo I CE = 96A<br>4 |a eee | til<br>2 ee<br>0 fe...eeee<br>5 10 15 20<br> VGE (V)<br>Fig. 10 - Typical VCE vs. VGE<br>TJ = 175°C<br>6000<br>5000 Tf<br>4000 PO EOFF<br>3000 /<br>2000 n/a<br>1000 pfeT<br>0<br>0 25 50 75 100<br>IC (A)<br>Energy (μJ)<br>VCE (V)<br>VCE (V)<br>**----- End of picture text -----**<br> **Fig. 12** - Typ. Energy Loss vs. IC TJ = 175°C; L = 200μH; VCE = 400V, RG = 10 Ω ; VGE = 15V www.irf.com 4 ## IRGP4068DPbF/IRGP4068D-EPbF **==> picture [236 x 208] intentionally omitted <==** **----- Start of picture text -----**<br> IGR R 1000 ectifier<br>a<br>td OFF<br>fo -=<br>100<br>|<br>a<br>tF<br>eeee ee e es ee ee<br>ee<br>10<br>0 20 40 60 80 100<br>IC (A)<br>Swiching Time (ns)<br>**----- End of picture text -----**<br> **==> picture [208 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 5000<br>4500<br>EOFF<br>4000<br>3500<br>3000<br>2500<br>2000<br>1500<br>1000<br>0 25 50 75 100 125<br>Energy (μJ)<br>**----- End of picture text -----**<br> Rg ( Ω ) **Fig. 14** - Typ. Energy Loss vs. RG TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15V **Fig. 13** - Typ. Switching Time vs. IC TJ = 175°C; L = 200μH; VCE = 400V, RG = 10 Ω ; VGE = 15V **==> picture [205 x 430] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>td OFF<br>TT A<br>eae<br>Tt<br>100<br>tF<br>ae<br>tet |<br>ee<br>ee<br>10<br>0 25 50 75 100 125<br>RG ( Ω )<br>Fig. 15 - Typ. Switching Time vs. RGG<br> = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE CE = 400V, ICE = 48A; VGE = 400V, ICE = 48A; VGE CE = 48A; VGE = 48A; VGE GE = 15V<br>10000<br>Cies<br>===<br>—}—}—<br>1000<br>a<br>Coes<br>Nea<br>100<br>A —<br>Cres<br>ee—— a<br>10<br>0 20 40 60 80 100<br>VCE (V)<br>Swiching Time (ns)<br>Capacitance (pF)<br>**----- End of picture text -----**<br> **==> picture [235 x 430] intentionally omitted <==** **----- Start of picture text -----**<br> 18 400<br>16 350<br>ena Tsc<br>Isc<br>14 TN IAL 300<br>12 250<br>ae<br>10 200<br>TTX Ll<br>8 150<br>a<br>64 NeeFf| BI 10050<br>8 10 12 14 16 18<br>VGE (V)<br>Fig. 16 - VGE vs. Short Circuit<br> VCC = 400V; TC = 25°C<br>16<br>14 po VCES = 300V Lye<br>VCES = 400V<br>12<br>_ Jy<br>10 a a<br>8<br>fo<br>6<br>4 fi<br>2 fifoj|| |<br>0<br>| |<br>0 25 50 75 100<br>Q G, Total Gate Charge (nC)<br>Time (μs)<br>VGE, Gate-to-Emitter Voltage (V)<br>Current (A)<br>**----- End of picture text -----**<br> **Fig. 15** - Typ. Switching Time vs. RGG TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE CE = 400V, ICE = 48A; VGE = 400V, ICE = 48A; VGE CE = 48A; VGE = 48A; VGE GE = 15V **Fig. 18** - Typical Gate Charge vs. VGE ICE = 48A; L = 600μH **Fig. 17** - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz www.irf.com 5 ## IRGP4068DPbF/IRGP4068D-EPbF **==> picture [464 x 683] intentionally omitted <==** **----- Start of picture text -----**<br> 160 1.0<br>a SJ IC = 1.4mA<br>140 D=0.1<br>PASSTE 0.9<br>120 OOPNaPNaa D=0.2=0.20.2 TE 0.8 ~— aN .<br>100<br>80 SFRKAEAA D=0.5 0.7 CCPNCE<br>a \<br>60 es ee<br>Square Pulse,quare Pulse,uare Pulse, sx 0.6<br>f = 20KHz<br>40 D = t/T<br>5 9 ONNeate 0.5<br>20 a t PENA<br>0 2 T = 50us PENSEBNSEBN 0.4 CEEEee<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>Case Temperature (°C) TJ , Temperature (°C)<br> Maximum Diode Repetitive Forward Fig 20. Typical Gate Threshold Voltage<br>Peak Current vs. Case Temperature (Normalized) vs. Junction Temperature<br>1<br>a ee eee ee eee eee ___...____.__._.__.._..<br>a | ee ee nn eee<br>D = 0.50<br>Tamme)CTI<br>0.1 eet 0.20<br>Sl= 0.05 0.02 0.10 TeyArr ppp τ J τ J τ 1 τ 1 R 1 R1 τ 2 τ R 2 | 2 R2 R τ 33 R τ 3 3 τ R 4 τ 4 R 4 4 | τ C τ |——} Ri (0.0248 0.0000140.0652 0.000050 0.1537 0.001041 °C/W) τ i (sec)<br>0.01<br>Sea 0.01 a i Ci= eee Ci τ i / Rii / Ri 0.2065 0.013663<br>| | | SINGLE PULSE a Notes: ee<br>AV ( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2 ee<br>2. Peak Tj = P dm x Zthjc + Tc<br>eal i PECEELTee annl |<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 21. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)<br>10<br>1 a D = 0.50<br>0.20<br>Sn 0.10 ETI a ea|<br>0.1 0.05<br>0.01 cep— 0.020.01 (ee τ J τ J τ 1 τ 1 R1R1 τ 2 τ R22R2 R τ 33R τ 33 τ R4 τ 4R4 4 τ C τ Ri i111 0.0400 0.000030 0.7532 0.000717 0.8317 0.004860(°C/W om ) τ i (sec)<br>email TT TA ——I<br>Sei Ci= Ci τ i / Rii / Ri a 0.3766 0.036590<br>SINGLE PULSE<br>0.001<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>PEP il<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>VGE(th), Gate Threshold Voltage (Normalized)<br>Thermal Response ( Z thJC ) °C/W<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br> **==> picture [197 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 160<br>a<br>140 D=0.1<br>PASSTE<br>120<br>OOPNaPNaa<br>D=0.2=0.20.2<br>100<br>D=0.5<br>80 SFRKAEAA<br>a \<br>60 es ee<br>Square Pulse,quare Pulse,uare Pulse, sx<br>f = 20KHz<br>40 D = t/T<br>5 9 NeateONNeate<br>20 a t PENA<br>T = 50us<br>0 2 PENSEBNSEBN<br>25 50 75 100 125 150 175<br>Repetitive Peak Current (A)<br>**----- End of picture text -----**<br> **Fig 19.** Maximum Diode Repetitive Forward Peak Current vs. Case Temperature **Fig. 22.** Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 6 ## IRGP4068DPbF/IRGP4068D-EPbF **==> picture [231 x 50] intentionally omitted <==** **----- Start of picture text -----**<br> L<br>VCC<br>DUT<br>0<br>1K<br>**----- End of picture text -----**<br> **==> picture [192 x 90] intentionally omitted <==** **----- Start of picture text -----**<br> L<br>DUO<br>><br>80 V<br>DUT<br>480V<br>Rg<br>**----- End of picture text -----**<br> **Fig.C.T.1** - Gate Charge Circuit (turn-off) **Fig.C.T.2** - RBSOA Circuit **==> picture [86 x 52] intentionally omitted <==** **----- Start of picture text -----**<br> 4x<br>DC 360V<br>DUT<br>**----- End of picture text -----**<br> **==> picture [204 x 120] intentionally omitted <==** **----- Start of picture text -----**<br> DIODE CLAMP /<br>DUT<br>L<br>><br>- 5V<br>DUT /<br>VCC<br>DRIVER<br>I Rg |<br>**----- End of picture text -----**<br> **Fig.C.T.3** - S.C. SOA Circuit **Fig.C.T.4** - Switching Loss Circuit **==> picture [206 x 138] intentionally omitted <==** **----- Start of picture text -----**<br> VCC<br>R =<br>ICM<br>DUT<br>VCC<br>Rg<br>**----- End of picture text -----**<br> **==> picture [225 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> C force<br>400μH<br>D1 10K<br>C sense<br>G force DUT 0.0075μ<br>E sense<br>E force<br>**----- End of picture text -----**<br> **Fig.C.T.5** - Resistive Load Circuit **Fig.C.T.6** - BVCES Filter Circuit www.irf.com 7 ## IRGP4068DPbF/IRGP4068D-EPbF **==> picture [202 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 700 140<br>600 120<br>500 100<br>400 80<br>tf<br>300 oe eee 60<br>90% ICE<br>200 40<br>5% VCE<br>100 20<br>5% ICE<br>0 aed eee 0<br>EOFF Loss<br>-100 -20<br>-0.40 0.10 0.60 1.10<br>Time(µs)<br> (V)<br>CE<br>V<br>**----- End of picture text -----**<br> **Fig. WF1** - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 **==> picture [211 x 263] intentionally omitted <==** **----- Start of picture text -----**<br> 600 600<br>500 500<br>ICE<br>VCE<br>400 i i | —" 4 7 400<br>300 300<br>™<br>200 200<br>100 100<br>0 0<br>ar<br>-100 -100<br>-5.00 0.00 5.00 10.00<br>time (µS)<br> (V) (A)<br>VCE ICE<br>**----- End of picture text -----**<br> **Fig. WF2** - Typ. S.C. Waveform @ TJ = 25°C using Fig. CT.3 www.irf.com 8 ## IRGP4068DPbF/IRGP4068D-EPbF TO-247AC package is not recommended for Surface Mount Application. www.irf.com 9 ## IRGP4068DPbF/IRGP4068D-EPbF TO-247AD Package Outline TO-247AD package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. **IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/09 www.irf.com 10
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →