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IRGP4066D-EPBF
IGBT, 140 A, 1.7 V, 454 W, 600 V, TO-247AD, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:140A; Collector Emitter Saturation Voltage Vce(on):1.7V; Power Dissipation Pd:454W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AD; No. of Pins:
- SVHC: No SVHC (27-Jun-2018)
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 454W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247AD
- Operating Temperature Max: 175°C
- Continuous Collector Current: 140A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.7V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 8.06 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## _**INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE**_
## IRGP4066DPbF IRGP4066D-EPbF
## **Features**
- Low VCE (ON) Trench IGBT Technology
- Low Switching Losses
- Maximum Junction Temperature 175 °C
- 5 μS short circuit SOA
- Square RBSOA
- 100% of The Parts Tested for ILM
- Positive VCE (ON) Temperature Coefficient
- Tight Parameter Distribution
- Lead Free Package
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C<br>VCES = 600V<br>I = 75A<br>C(Nominal)<br>G tSC ≥ 5μs, TJ(max) = 175°C<br>E VCE(on) typ. = 1.70V<br>n-channel<br>**----- End of picture text -----**<br>
## **Benefits**
- High Efficiency in a Wide Range of Applications
- Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses
- Rugged Transient Performance for Increased Reliability
- Excellent Current Sharing in Parallel Operation
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C<br>C<br>E<br>C [E] C<br>G G<br>**----- End of picture text -----**<br>
TO-247AC TO-247AD IRGP4066DPbF IRGP4066D-EPbF
|**G**|**C**|**E**|
|---|---|---|
|Gate|Collector|Emitter|
## **Absolute Maximum Ratings**
||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VCES<br>~~——~~|Collector-to-Emitter Voltage<br>~~——~~|600<br>~~——~~|V<br>~~——~~|
|IC@ TC =25°C<br>~~——~~|Continuous Collector Current<br>~~oe~~<br>~~——~~|140<br>~~oe~~<br>~~——~~|A<br>~~——~~|
|IC @TC= 100°C<br>~~——~~|ContinuousCollectorCurrent<br>~~a~~<br>~~——~~|90<br>~~a~~<br>~~——~~||
|INOMINAL<br>~~——~~|Nominal Current<br>~~a~~<br>~~——~~|75<br>~~a~~<br>~~O~~<br>~~——~~||
|ICM<br>~~——~~|Pulse Collector Current,VGE= 15V<br>~~——~~|225<br>~~——~~||
|ILM<br>~~——~~|Clamped Inductive Load Current,VGE= 20V<br>~~——~~<br>~~On~~|300<br>~~——~~<br>~~On~~||
|IF @TC= 25°C<br>~~——~~|DiodeContinous ForwardCurrent<br>~~——~~<br>~~a~~|140<br>~~——~~<br>~~a~~||
|IF @TC= 100°C<br>~~——~~|DiodeContinous ForwardCurrent<br>~~——~~<br>~~a~~|90<br>~~——~~<br>~~a~~||
|IFM<br>~~——~~|Diode Maximum Forward Current<br>~~——~~<br>~~7~~|300<br>~~——~~<br>~~7~~||
|VGE<br>~~——~~|ContinuousGate-to-Emitter Voltage<br>~~——~~<br>~~oes~~<br>~~ee~~|±20<br>~~——~~<br>~~oes~~<br>~~ee~~|V<br>~~——~~<br>~~ee~~|
||Transient Gate-to-Emitter Voltage<br>~~ee~~|±30<br>~~ee~~||
|PD @TC= 25°C|Maximum Power Dissipation<br>~~SS~~<br>~~i~~|454<br>~~SS~~<br>~~i~~|W<br>~~i~~|
|PD@ TC =100°C|Maximum Power Dissipation<br>~~i~~<br>~~ee~~|227<br>~~i~~||
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range<br>~~ee~~|-55 to +175|°C<br>~~EET~~|
||Soldering Temperature, for 10 sec.<br>~~ee~~|300 (0.063 in. (1.6mm) from case)<br>~~—@~~<br>~~TT~~||
||MountingTorque, 6-32 or M3 Screw<br>~~ee~~<br>~~TTT~~|10lbf·in(1.1 N·m)<br>~~TTT~~<br>~~—@~~<br>~~TT~~|~~TTT~~<br>~~EET~~|
1
10/08/2010
## IRGP4066DPbF/IRGP4066D-EPbF
## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**
|~~PC~~|**Parameter**<br>~~a~~<br>~~PC~~<br>~~eS~~|**Min.**<br>~~GD~~<br><br>~~sc“te Te~~|**Typ.**<br>~~GD~~<br><br>~~Te~~|**Max.**<br>~~I~~<br><br>~~Te~~|**Units **<br>~~GO~~<br><br>~~Te~~|**Conditions**<br>~~GO~~<br>|
|---|---|---|---|---|---|---|
|V(BR)CES<br>~~PC~~|Collector-to-Emitter Breakdown Voltage<br>~~a~~<br>~~PCrrrrrrr—,—C~~<br>~~eS~~|600<br>~~GD~~<br>~~rrrrrrr—,—C~~<br>~~sc“te Te~~|—<br>~~GD ~~<br>~~rrrrrrr—,—C~~<br>~~Te~~|—<br> ~~I~~<br>~~rrrrrrr—,—C~~<br>~~Te~~|V<br>~~GO~~<br>~~rrrrrrr—,—C~~<br>~~Te~~|VGE= 0V,IC= 100μA<br>~~GO~~<br>~~rrrrrrr—,—C~~|
|ΔV(BR)CES/ΔTJ<br>~~PC~~|Temperature Coeff. of Breakdown Voltage<br>~~PC~~<br>~~eS~~|—<br><br>~~sc“te Te~~|0.30<br><br>~~Te~~|—<br><br>~~Te~~<br>~~GO~~|V/°C<br><br>~~Te~~<br>~~GO~~|VGE= 0V,IC= 2.0mA(25°C-175°C)<br><br>~~GO~~|
|VCE(on)|Collector-to-Emitter Saturation Voltage<br>~~eS~~|—<br>~~sc“te Te~~|1.70<br>~~Te~~<br>~~a~~|2.10<br>~~Te~~<br>~~a~~|V<br>~~Te~~<br>~~a~~<br>~~a~~<br>~~GO~~|IC= 75A,VGE= 15V,TJ= 25°C<br>~~a®~~|
|||—|2.0<br>~~a~~|—<br>~~a~~||IC= 75A,VGE= 15V,TJ= 150°C<br>~~a~~®|
|||—|2.1<br>~~a~~<br>~~GOR~~|—<br>~~GOR~~||IC= 75A,VGE= 15V,TJ= 175°C<br>®<br>~~GO~~|
|VGE(th)|Gate Threshold Voltage<br>~~DD~~|4.0<br>~~DD~~|—<br>~~DD~~<br>~~GOR~~<br>~~I~~|6.5<br>~~DD~~<br>~~GOR~~|V<br>~~DD~~<br>~~GO~~|VCE= VGE,IC= 2.1mA<br>~~DD~~<br>~~GO~~|
|ΔVGE(th)/ΔTJ|Threshold Voltage temp. coefficient<br>~~DD~~|—<br>~~DD~~<br>~~SD~~|-21<br>~~GOR~~<br>~~DD~~<br>~~I~~<br>~~I~~|—<br>~~GOR ~~<br>~~DD~~<br>~~I~~|mV/°C <br> ~~GO~~<br>~~DD~~|VCE= VGE,IC= 2.1mA(25°C - 175°C)<br>~~GO~~<br>~~DD~~|
|gfe|Forward Transconductance<br>~~DD~~<br>~~nD~~|—<br>~~DD~~<br>~~nD~~<br>~~SD~~|50<br>~~DD~~<br>~~I~~<br>~~nD~~<br>~~I~~|—<br>~~DD~~<br>~~nD~~<br>~~I~~|S<br>~~DD~~<br>~~nD~~|VCE= 50V,IC= 75A,PW = 60μs<br>~~DD~~<br>~~nD~~|
|ICES|Collector-to-Emitter Leakage Current<br>~~ee~~|—<br>~~SD ~~<br>~~ee~~|1.0<br> ~~I ~~<br>~~ee~~|100<br> ~~I~~<br>~~ee~~|μA<br>~~ee~~|VGE= 0V,VCE= 600V<br>~~ee~~|
|||—<br>~~ee~~|1040<br>~~ee~~<br>~~a~~|—<br>~~ee~~<br>~~a~~||VGE= 0V,VCE= 600V,TJ= 175°C<br>~~ee~~|
|VFM|Diode Forward Voltage Drop<br>~~EEE~~|—<br>~~EEE~~|2.23<br>~~EEE~~|3.0<br>~~EEE~~|V<br>~~EEE~~|IF= 75A<br>~~EEE~~|
|||—<br>~~EEE~~|1.8<br>~~EEE~~<br>~~fT~~|—<br>~~EEE~~<br>~~fT~~||IF= 75A,TJ= 175°C<br>~~EEE~~|
|IGES|Gate-to-Emitter Leakage Current<br>~~DD~~|—<br>~~DD~~|—<br>~~DD ~~|±200<br> ~~GO~~|nA<br>~~GO~~|VGE= ±20V<br>~~GO~~|
|**Switching Characteristics @ TJ = 25°C(unless otherwise specified)**<br>~~a~~<br>~~GD OSGO~~|||||||
|~~a~~|**Parameter**<br>~~a~~<br>~~a~~|**Min.**<br>~~GD~~<br>|**Typ.**<br>~~GD OS~~<br>|**Max.**<br>~~OS~~<br>|**Units**<br>~~G~~|**Conditions**<br>~~GO~~|
|Qg<br>~~a~~|Total Gate Charge(turn-on)<br>~~a~~<br>~~a~~|—<br>~~GD~~<br>|150<br>~~GD OS~~<br>|225<br>~~OS~~<br>|nC<br>~~G~~|IC= 75A<br>VGE= 15V<br>VCC= 400V<br>~~GO~~|
|Qge<br>~~a~~|Gate-to-Emitter Charge(turn-on)<br>~~aes~~|—<br>~~es~~|40<br>~~es~~|60<br>~~es~~|||
|Qgc|Gate-to-Collector Charge(turn-on)<br>~~es~~|—<br>~~es~~|60<br>~~es~~|90<br>~~es~~|||
|Eon|Turn-On SwitchingLoss<br>~~a~~|—<br>~~a~~|2465<br>~~a~~|3360<br>~~a~~|μJ|IC= 75A, VCC= 400V, VGE= 15V<br>RG= 10Ω, L = 200μH, TJ= 25°C<br>Energylosses include tail & diode reverse recovery|
|Eoff|Turn-Off SwitchingLoss<br>~~es~~|—<br>~~es~~|2155<br>~~es~~|3040<br>~~es~~|||
|Etotal<br>~~a~~|Total SwitchingLoss<br>~~es~~<br>~~a~~|—<br>~~es~~<br>|4620<br>~~es~~<br>|6400<br>~~es~~<br>|||
|td(on)<br>~~a~~|Turn-On delaytime<br>~~a~~|—<br>|50<br>|70<br>|I<br>ns|IC= 75A, VCC= 400V, VGE= 15V<br>RG= 10Ω, L = 200μH, TJ= 25°C|
|tr<br>~~a~~|Rise time<br>~~aes~~|—<br>~~es~~|70<br>~~es~~|90<br>~~es~~|||
|td(off)|Turn-Off delaytime<br>~~a~~|—<br>~~a~~|200<br>~~a~~|225<br>~~a~~|||
|tf<br>~~a~~|Fall time<br>~~es~~<br>~~a~~|—<br>~~es~~<br>|60<br>~~es~~<br>|80<br>~~es~~<br>|||
|Eon<br>~~a~~|Turn-On SwitchingLoss<br>~~a~~|—<br>|3870<br>|—<br>|I<br>μJ|IC= 75A, VCC= 400V, VGE=15V<br>RG=10Ω, L=200μH, TJ= 175°C<br>Energylosses include tail & diode reverse recovery|
|Eoff<br>~~a~~|Turn-Off SwitchingLoss<br>~~aes~~|—<br>~~es~~|2815<br>~~es~~|—<br>~~es~~|||
|Etotal|Total SwitchingLoss<br>~~es~~|—<br>~~es~~|6685<br>~~es~~|—<br>~~es~~|||
|td(on)|Turn-On delaytime<br>~~a~~|—<br>~~a~~|50<br>~~a~~|—<br>~~a~~|I<br>ns|IC= 75A, VCC= 400V, VGE= 15V<br>RG= 10Ω, L = 200μH<br>TJ= 175°C|
|tr|Rise time<br>~~es~~|—<br>~~es~~|70<br>~~es~~|—<br>~~es~~|||
|td(off)|Turn-Off delaytime<br>~~es~~|—<br>~~es~~|240<br>~~es~~|—<br>~~es~~|||
|tf|Fall time<br>~~es~~|—<br>~~es~~|70<br>~~es~~|—<br>~~es~~|||
|Cies|Input Capacitance<br>~~es~~|—<br>~~es~~|4440<br>~~es~~|—<br>~~es~~|pF|VGE= 0V<br>VCC= 30V<br>f = 1.0Mhz<br>~~ee~~|
|Coes|Output Capacitance<br>~~es~~|—<br>~~es~~|245<br>~~es~~|—<br>~~es~~|||
|Cres|Reverse Transfer Capacitance<br>~~es~~|—<br>~~es~~<br>~~e~~|130<br>~~es~~<br>~~e~~|—<br>~~es~~<br>~~e~~|||
|RBSOA<br>~~a~~|Reverse Bias Safe Operating Area<br>~~es~~<br>~~e~~<br>~~a~~|FULL SQUARE<br>~~es~~<br>~~e~~~~**e**~~<br>~~e~~<br>~~eeee e~~<br>|||~~**e**~~<br>~~e~~<br>|TJ= 175°C, IC= 300A<br>VCC= 480V, Vp<br>600V<br>Rg= 10Ω,VGE= +20V to 0V<br>~~**e**~~<br>~~ee~~<br>~~ee~~|
|SCSOA<br>~~a~~|Short Circuit Safe Operating Area<br>~~e~~<br>~~ee~~<br>~~a~~|5<br>~~e~~<br>~~e~~<br>~~ee~~<br>|—<br>~~e~~<br>~~e~~<br>~~ee~~<br>~~ee~~<br>|—<br>~~e~~~~**e**~~<br>~~e~~<br>~~ee~~<br>~~ee e~~<br>|μs<br>~~**e**~~<br>~~ee~~<br>~~e~~<br>|VCC= 400V, Vp<br>600V<br>Rg= 10Ω,VGE= +15V to 0V<br>~~**e**~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|Erec<br>~~a~~|Reverse RecoveryEnergyof the Diode<br>~~a~~|—<br>|470<br>~~ee~~<br>|—<br>~~ee e~~<br>|μJ<br>~~e~~<br>|TJ= 175°C<br>VCC= 400V, IF= 75A<br>VGE= 15V, Rg= 10Ω, L = 60μH<br>~~ee~~|
|trr<br>~~a~~<br>~~a~~|Diode Reverse RecoveryTime<br>~~aes~~<br>~~a~~|—<br>~~es~~|155<br>~~ee ~~<br>~~es~~|—<br> ~~ee e~~<br>~~es~~|ns<br>~~e~~<br>~~es~~||
|Irr<br>~~a~~|Peak Reverse RecoveryCurrent<br>~~a~~|—|27|—|A||
## **Notes:**
VCC = 80% (VCES), VGE = 20V, L = 10μH, RG = 10 Ω .
Pulse width limited by max. junction temperature.
> Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
> R θ is measured at TJ of approximately 90°C.
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2
## IRGP4066DPbF/IRGP4066D-EPbF
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TER Rectifier<br>140<br>120 Swan<br>100<br>SA<br>80<br>FPSSEAE<br>60<br>ENC<br>40 EN<br>20<br>PEEEEN)<br>0 pt | | dt A<br>25 50 75 100 125 150 175<br> TC (°C)<br>IC (A)<br>**----- End of picture text -----**<br>
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400<br>300<br>SON<br>PNUD<br>200<br>XK<br>BERNE<br>100 LEDS<br>0 I~<br>25 50 75 100 125 150 175<br> TC (°C)<br>Ptot (W)<br>**----- End of picture text -----**<br>
**Fig. 1** - Maximum DC Collector Current vs. Case Temperature
**Fig. 2** - Power Dissipation vs. Case Temperature
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1000<br>100 10μsec<br>100μsec<br>1msec<br>10<br>po DC NS<br>1<br>Tc = 25°C<br>Tj = 175°C<br>Single Pulse<br>0.1 PCIE Fri<br>1 10 100 1000<br>VCE (V)<br>Fig. 3 - Forward SOA<br>TC = 25°C, TJ ≤ 175°C; VGE =15V<br>300<br>250<br>| A<br>VGE = 18V<br>200 V GE = 15V<br>oS<br>VGE = 12V<br>150 VGE = 10V<br>VGE = 8.0V<br>100 a<br>=m<br>50<br>a a2ne<br>AA | |<br>0<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>IC (A)<br>**----- End of picture text -----**<br>
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1000<br>100<br>10 | el<br>1 ll<br>10 100 1000<br>VCE (V)<br>Fig. 4 - Reverse Bias SOA<br>TJ = 175°C; VGE =20V<br>300<br>250<br>TIT<br>200 V GE = 18V<br>AS VGE = 15V<br>150 VGE = 12V<br>VGE = 10V<br>VGE = 8.0V<br>100 Se<br>n/Aeam<br>50<br>wave<br>0 ABR}<br>+<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>IC (A)<br>**----- End of picture text -----**<br>
**Fig. 5** - Typ. IGBT Output Characteristics TJ = -40°C; tp = ≤ 60μs
**Fig. 6** - Typ. IGBT Output Characteristics TJ = 25°C; tp = ≤ 60μs
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3
## IRGP4066DPbF/IRGP4066D-EPbF
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300<br>VGE = 18VGE = 18V = 18V<br>250 V GE = 15V<br>TA | |<br>VGE = 12VGE = 12V= 12V<br>200 VGE = 10VGE = 10V= 10V<br>VGE = 8.0VGE = 8.0V= 8.0V<br>150<br>100<br>50<br>0 ALLL<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>
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300 300<br>VGE = 18VGE = 18V = 18V<br>250 V GE = 15V 250<br>TA | | ay [a]<br>VGE = 12VGE = 12V= 12V<br>200 VGE = 10VGE = 10V= 10V 200<br>VGE = 8.0VGE = 8.0V= 8.0V<br>150 150<br>100 100 -40 ° C<br>25°C<br>175°C<br>50 50<br>VA<br>0 ALLL 0 |<br>0 2 4 6 8 10 0.0 1.0 2.0 3.0 4.0<br> VF (V)<br> VCE (V)<br>Fig. 7 - Typ. IGBT Output Characteristics Fig. 8 - Typ. Diode Forward Characteristics<br>TJ = 175°C; tp = ≤ 60μs tp = 80μs<br>20 20<br>18 en 18 ee<br>se rth<br>1614 | 1614 en<br>12 I CE = 38A 12 ICE = 38A<br>10 CTE ICE = 75A 10 inl I CE = 75A<br>8 I CE = 150A 8 ICE = 150A<br>64 eesnies ae 64 ee62id<br>2 a 2 es<br>0 'Zes ee ee 0 esZee ee<br>5 10 15 20 5 10 15 20<br> VGE (V) VGE (V)<br>Fig. 9 - Typical VCE vs. VGE Fig. 10 - Typical VCE vs. VGE<br>TJ = -40°C TJ = 25°C<br>20 300<br>18<br>250<br>16 PA Ean TJ = 25°C An<br>14 TJ = 175°C<br>200<br>Hf<br>12<br>10 ICE = 38A 150<br>CT ICE = 75A San/eae<br>8 I CE = 150A<br>100<br>6<br>rae fo<br>4<br>50<br>2 ea Sey See<br>0 SS 0 AL]| lf<br>5 10 15 20 4 6 8 10 12 14 16 18<br> VGE (V) VGE, Gate-to-Emitter Voltage (V)<br>IC, Collector-to-Emitter Current (A)<br>IF (A)<br>VCE (V) VCE (V)<br>VCE (V)<br>**----- End of picture text -----**<br>
**Fig. 11** - Typical VCE vs. VGE TJ = 175°C
**Fig. 12** - Typ. Transfer Characteristics VCE = 50V; tp = 60μs
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4
## IRGP4066DPbF/IRGP4066D-EPbF
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12000 1000<br>10000<br>{| tii ly — td OFF<br>8000<br>Pitty —<br>EON<br>tF<br>6000 100<br>nae aS<br>4000<br>SK ———<br>EOFF td ON<br>2000 tR<br>ezae Aa<br>0 Panne 10 py<br>0 25 50 75 100 125 150 0 50 100 150<br>IC (A)<br>IC (A)<br>Fig. 13 - Typ. Energy Loss vs. ICC Fig. 14 - Typ. Switching Time vs. ICC<br> = 175°C; L = 200μH; VCE = 400V, RG = 10CE = 400V, RG = 10= 400V, RG = 10G = 10= 10 Ω ; VGE = 15VGE = 15V= 15V TJ = 175°C; L = 200μH; VCE = 400V, RG = 10J = 175°C; L = 200μH; VCE = 400V, RG = 10 = 175°C; L = 200μH; VCE = 400V, RG = 10CE = 400V, RG = 10= 400V, RG = 10G = 10= 10 Ω ; VGE GE = 15V<br>11000 10000<br>9000 4 ===<br>1000<br>7000 tdOFF<br>— AL Ee<br>EON t F<br>5000<br>tR<br>100<br>EOFF<br>3000 td ON<br>1000 10<br>“tt tf PE<br>0 25 50 75 100 0 20 40 60 80 100 120<br>Rg ( Ω ) RG ( Ω )<br>Fig. 15 - Typ. Energy Loss vs. RGG Fig. 16 - Typ. Switching Time vs. RGG<br> = 175°C; L = 200μH; VCE = 400V, ICE = 75A; VGE = 15VCE = 400V, ICE = 75A; VGE = 15V= 400V, ICE = 75A; VGE = 15VCE = 75A; VGE = 15V= 75A; VGE = 15VGE = 15V= 15V TJ = 175°C; L = 200μH; VCE = 400V, ICE = 75A; VGE J = 175°C; L = 200μH; VCE = 400V, ICE = 75A; VGE = 175°C; L = 200μH; VCE = 400V, ICE = 75A; VGE CE = 400V, ICE = 75A; VGE = 400V, ICE = 75A; VGE CE = 75A; VGE = 75A; VGE GE = 15V<br>35 30<br>RG = 5.0 Ω<br>30<br>RG = 10 Ω 25<br>25<br>20 R G = 47 Ω<br>20<br>15<br>RG = 100 Ω<br>10 15<br>20 40 60 80 100 120 140 160 0 20 40 60 80 100<br>IF (A) RG ( Ω)<br>Energy (μJ)<br>Swiching Time (ns)<br>Swiching Time (ns)<br>IRR (A) IRR (A)<br>Energy (μJ)<br>**----- End of picture text -----**<br>
**Fig. 13** - Typ. Energy Loss vs. ICC TJ = 175°C; L = 200μH; VCE = 400V, RG = 10CE = 400V, RG = 10= 400V, RG = 10G = 10= 10 Ω ; VGE = 15VGE = 15V= 15V
**Fig. 14** - Typ. Switching Time vs. ICC TJ = 175°C; L = 200μH; VCE = 400V, RG = 10J = 175°C; L = 200μH; VCE = 400V, RG = 10 = 175°C; L = 200μH; VCE = 400V, RG = 10CE = 400V, RG = 10= 400V, RG = 10G = 10= 10 Ω ; VGE GE = 15V
**Fig. 16** - Typ. Switching Time vs. RGG TJ = 175°C; L = 200μH; VCE = 400V, ICE = 75A; VGE J = 175°C; L = 200μH; VCE = 400V, ICE = 75A; VGE = 175°C; L = 200μH; VCE = 400V, ICE = 75A; VGE CE = 400V, ICE = 75A; VGE = 400V, ICE = 75A; VGE CE = 75A; VGE = 75A; VGE GE = 15V
**Fig. 15** - Typ. Energy Loss vs. RGG TJ = 175°C; L = 200μH; VCE = 400V, ICE = 75A; VGE = 15VCE = 400V, ICE = 75A; VGE = 15V= 400V, ICE = 75A; VGE = 15VCE = 75A; VGE = 15V= 75A; VGE = 15VGE = 15V= 15V
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30<br>25<br>20<br>15<br>0 20 40 60 80 100<br>RG ( Ω)<br>IRR (A)<br>**----- End of picture text -----**<br>
**Fig. 17** - Typ. Diode IRR vs. IF TJ = 175°C
**Fig. 18** - Typ. Diode IRR vs. RG TJ = 175°C
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5
## IRGP4066DPbF/IRGP4066D-EPbF
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30<br>25<br>TH)TALL<br>20<br>canna<br>15<br>200 300 400 500 600 700<br>diF /dt (A/μs)<br>IRR (A)<br>**----- End of picture text -----**<br>
**Fig. 19** - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 75A; TJ = 175°C
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400<br>RG = 10 Ω<br>I]<br>350<br>300 RG = 22 Ω<br>EanEE=<br>250<br>Pannen<br>RG = 47 Ω<br>200<br>150 RG = 100 Ω<br>cena<br>100 Ean<br>10 20 30 40 50 60 70<br>IF (A)<br>Energy (μJ)<br>**----- End of picture text -----**<br>
**Fig. 21** - Typ. Diode ERR vs. IF TJ = 175°C
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10000<br>Tf Cies<br>= SS]<br>1000<br>| ff<br>—————=<br>KE Coes<br>100<br>Cres<br>ee<br>10<br>0 100 200 300 400 500<br>VCE (V)<br>Capacitance (pF)<br>**----- End of picture text -----**<br>
**Fig. 23** - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
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3000<br>5.0 Ω<br>150A 10 Ω<br> 47 Ω<br>2500<br>100 Ω AD 75A<br>2000 fa 38A a<br>1500 LLeae<br>200 300 400 500 600 700<br>diF /dt (A/μs)<br>Fig. 20 - Typ. Diode QRR vs. diF/dt<br>VCC = 400V; VGE = 15V; TJ = 175°C<br>20 800<br>Tsc<br>15 600<br>EGnnE Isc<br>10 400<br>EXUAn<br>5 200<br>0 et Ltd 0<br>8 10 12 14 16 18<br>VGE (V)<br>Time (μs)<br>QRR (nC)<br>Current (A)<br>**----- End of picture text -----**<br>
**Fig. 22** - VGE vs. Short Circuit Time VCC = 400V; TC = 25°C
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16<br>14 TI VCES = 400V yy<br>xt<br>VCES = 300V<br>12<br>10 A<br>ey<br>8 PT<br>VEEL<br>6<br>4<br>2 PECEELLE<br>0<br>0 20 40 60 80 100 120 140 160<br>Q G, Total Gate Charge (nC)<br>VGE, Gate-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br>
**Fig. 24** - Typical Gate Charge vs. VGE ICE = 75A; L = 485μH
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6
## IRGP4066DPbF/IRGP4066D-EPbF
**==> picture [435 x 526] intentionally omitted <==**
**----- Start of picture text -----**<br>
1<br>a eee ee ee<br>D = 0.50<br>eee — 0001 ALL Al<br>0.1 ee a eee el<br>0.20<br>—e 0.10 Oa a a°cOO eS<br>0.01 eaPeeTpeareeee 0.050.010.02 eeeea ELee ee ee eeeeefp τ J τ J τ 1 τ Lobi 1 R ne 1 R i 1 τ 2 τ R22 R pwr 2 Lei R τ 33 R τ 3 3 T τ R4 τ 4R4 4 τ C τ Ri 00.09441 0.13424 0.002834 . ( 00 °C/W 738 ) 00.000179 τ .000009 i (sec) HI|il1]aHT<br>0.001 ||| || SINGLE PULSE Ci= Ci τ i / Rii / Ri 0.09294 0.0182 llil<br>( THERMAL RESPONSE )<br>Same es On OU 0 1 ee Oe On 000QO 00 OO OO 0 Notes: | |<br>a ee ee a ee el mean<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>FEA EAE ee<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)<br>10<br>eeee ee eee<br>1 earee en ee<br>D = 0.50<br>P| 0.20 eA aa A ee es ec ee<br>0.1 oe 0.050.10 R1R1 R2R2 R3R3 R4R 4 Ri (°C/W) τ i (sec) |<br>0.01 ee—Fee 0.020.01 ceeae τ J τ eee J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 τ 4 τ 4 τ C τ 0.02738 0.000053 0.34077 0.41380 0.005203 0.000485 il|<br>ae eee CiCi= τ i / Rii / Ri 0.22819 0.034407 LT<br>Notes:<br>0.001<br>SINGLE PULSE 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>( THERMAL RESPONSE )<br>samcaaaimmmes| | etaaeee eeaee aUT<br>a | | |<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>
**Fig. 26.** Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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7
## IRGP4066DPbF/IRGP4066D-EPbF
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L<br>DUT VCC<br>0<br>1K<br>**----- End of picture text -----**<br>
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L<br>80 V +<br>- DUT VCC<br>Rg<br>**----- End of picture text -----**<br>
**Fig.C.T.1** - Gate Charge Circuit (turn-off)
**Fig.C.T.2** - RBSOA Circuit
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4X<br>DC VCC<br>DUT<br>**----- End of picture text -----**<br>
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diode clamp /<br>DUT<br>L<br>_ :<br>-5V<br>DUT /<br>VCC<br>DRIVER<br>|<br>Rg<br>**----- End of picture text -----**<br>
SCSOA
**Fig.C.T.3** - S.C. SOA Circuit
**Fig.C.T.4** - Switching Loss Circuit
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R = [VCC]<br>ICM<br>VCC<br>DUT<br>Rg<br>**----- End of picture text -----**<br>
**Fig.C.T.5** - Resistive Load Circuit
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C force<br>100K<br>D1 22K<br>C sense<br>DUT<br>G force 0.0075μF<br>E sense<br>E force<br>**----- End of picture text -----**<br>
**Fig.C.T.6** - BVCES Filter Circuit
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8
## IRGP4066DPbF/IRGP4066D-EPbF
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600 120 600 120<br>tf tr<br>500 100 500 100<br>TEST<br>90% ICE CURRENT<br>90%<br>400 80 400 I CE 80<br>300 on te 60 300 LA 60<br>200 aE 40 200 a 40<br>100 lb 5% VCE 20 100 YM 10% ICE \ 5% VCE 20<br>5% ICE<br>0 0 0 0<br>Ae an Eon Ae<br>Eoff Loss Loss<br>-100 -20 -100 -20<br>-0.4 -0.2 0.0 0.2 0.4 0.6 7.6 7.8 8.0 8.2<br>time(µs) time (µs)<br> (V) (A) (V) (A)<br>VCE ICE VCE ICE<br>**----- End of picture text -----**<br>
**Fig. WF1** - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4
**Fig. WF2** - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4
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90<br>oO<br>80<br>70 QRR<br>ee<br>60<br>50 VP<br>tRR<br>40<br>HERE<br>30<br>20<br>10 OMEhotPE<br>0<br>-10<br>Peak IRR<br>-20 TK<br>-30<br>-40<br>-50<br>Co<br>-0.20 -0.10 0.00 0.10 0.20 0.30 0.40<br>time (µS)<br> (V)<br>F<br>V<br>**----- End of picture text -----**<br>
**Fig. WF3** - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4
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700 700<br>600 600<br>VCE<br>500 500<br>of<br>400 400<br>LPO<br>300 300<br>ICE<br>|e<br>200 200<br>100 100<br>fot<br>eee<br>0 0<br>-100 | -100<br>-3 0 3 6 9 12<br>Time (uS)<br> (A)<br>CE<br>Vce (V) I<br>**----- End of picture text -----**<br>
**Fig. WF4** - Typ. S.C. Waveform @ TJ = 25°C using Fig. CT.3
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9
## IRGP4066DPbF/IRGP4066D-EPbF
TO-247AC package is not recommended for Surface Mount Application.
www.irf.com
10
## IRGP4066DPbF/IRGP4066D-EPbF
TO-247AD package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site.
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 10/2010
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11
Updated at June 9, 2026
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