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IRGP35B60PDPBF
IGBT, 60 A, 2.15 V, 308 W, 600 V, TO-247AC, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Power Dissipation: 308W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247AC
- Operating Temperature Max: 150°C
- Continuous Collector Current: 60A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 2.15V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 3.45 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**SMPS IGBT** ## IRGP35B60PDPbF ## WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE ## **Applications** - Telecom and Server SMPS - PFC and ZVS SMPS Circuits - Uninterruptable Power Supplies - Consumer Electronics Power Supplies - Lead-Free ## **Features** - NPT Technology, Positive Temperature Coefficient **==> picture [80 x 116] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>G<br>E<br>n-channel<br>**----- End of picture text -----**<br> VCES = 600V VCE(on) typ. = 1.85V @ VGE = 15V IC = 22A **Equivalent MOSFET Parameters** RCE(on) typ. = 84mΩ ID (FET equivalent) = 35A - Lower VCE(SAT) - Lower Parasitic Capacitances - Minimal Tail Current - HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode - Tighter Distribution of Parameters - Higher Reliability ## **Benefits** - Parallel Operation for Higher Current Applications - Lower Conduction Losses and Switching Losses **==> picture [56 x 51] intentionally omitted <==** **----- Start of picture text -----**<br> E<br>C<br>G<br>TO-247AC<br>**----- End of picture text -----**<br> - Higher Switching Frequency up to 150kHz **Absolute Maximum Ratings** ||**Parameter**|**Max.**|**Units**| |---|---|---|---| |VCES|Collector-to-Emitter Voltage<br>~~i~~|600<br>~~i~~|V<br>~~i~~| |IC@ TC =25°C|ContinuousCollectorCurrent<br>~~i~~<br>~~**a**~~|60<br>~~i~~<br>~~**a**~~|A<br>~~i~~<br>~~-~~| |IC@ TC =100°C|Continuous Collector Current<br>~~**a**~~|34<br>~~**a**~~|| |ICM|PulseCollectorCurrent(Ref. Fig.C.T.4)<br>~~**a**~~|120<br>~~**a**~~|| |ILM|Clamped Inductive Load Current<br>~~**a**~~<br>~~LO~~|120<br>~~**a**~~<br>~~LO~~|| |IF@ TC =25°C|DiodeContinous ForwardCurrent<br>~~**a**~~<br>~~a~~|40<br>~~**a**~~<br>~~a~~|| |IF@ TC =100°C|Diode Continous Forward Current<br>~~**a**~~<br>~~oes~~|15<br>~~**a**~~<br>~~oes~~|| |IFRM|Maximum Repetitive Forward Current<br>~~**a**~~|60<br>~~**a**~~|| |VGE|Gate-to-Emitter Voltage<br>~~ee~~|±20<br>~~ee~~|V<br>~~ee~~| |PD@ TC =25°C|Maximum Power Dissipation<br>~~ee~~|308<br>~~ee~~|W<br>~~ee~~<br>~~po~~| |PD@ TC =100°C<br>~~po~~|Maximum Power Dissipation<br>~~ee~~<br>~~oes~~<br>~~po~~|123<br>~~ee~~<br>~~oes~~<br>~~po~~|| |TJ<br>TSTG<br>~~po~~|Operating Junction and<br>Storage Temperature Range<br>~~po~~|-55 to +150<br>~~po~~|°C<br>~~po~~| |~~po~~|SolderingTemperature for 10sec.<br>~~po~~|300 (0.063in.(1.6mm)from case)<br>~~po~~|| |~~po~~|MountingTorque,6-32 or M3 Screw<br>~~po~~<br>~~LG~~|10 lbf·in(1.1 N·m)<br>~~po~~<br>~~LG~~|~~po~~<br>~~LG~~| ## **Thermal Resistance** ||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units**| |---|---|---|---|---|---| |RθJC (IGBT)|Thermal Resistance Junction-to-Case-(each IGBT)|–––|–––|0.41|°C/W| |RθJC (Diode)|Thermal Resistance Junction-to-Case-(each Diode)|–––|–––|1.7|| |RθCS|Thermal Resistance,Case-to-Sink(flat, greased surface)|–––|0.24|–––|| |RθJA|Thermal Resistance,Junction-to-Ambient(typical socket mount)|–––|–––|40|| ||Weight|–––|6.0 (0.21)|–––|g (oz)| 6/2/04 ## IRGP35B60PDPbF ## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** |V(BR)CES<br>∆V(BR)CES/∆TJ<br>RG|**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units Conditions**<br>**Ref.Fig**<br>Collector-to-Emitter Breakdown Voltage<br>600<br>—<br>—<br>V<br>VGE= 0V, IC= 500µA<br>Temperature Coeff. of Breakdown Voltage<br>—<br>0.78<br>—<br>V/°C VGE= 0V, IC= 1mA(25°C-125°C)<br>Internal Gate Resistance<br>—<br>1.7<br>—<br>Ω<br>1MHz, Open Collector<br>—<br>1.85<br>2.15<br>IC= 22A, VGE= 15V<br>4, 5,6,8,9<br>~~ee~~<br>~~a~~<br>~~GO~~<br>~~GO~~<br>~~TT~~|**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units Conditions**<br>**Ref.Fig**<br>Collector-to-Emitter Breakdown Voltage<br>600<br>—<br>—<br>V<br>VGE= 0V, IC= 500µA<br>Temperature Coeff. of Breakdown Voltage<br>—<br>0.78<br>—<br>V/°C VGE= 0V, IC= 1mA(25°C-125°C)<br>Internal Gate Resistance<br>—<br>1.7<br>—<br>Ω<br>1MHz, Open Collector<br>—<br>1.85<br>2.15<br>IC= 22A, VGE= 15V<br>4, 5,6,8,9<br>~~ee~~<br>~~a~~<br>~~GO~~<br>~~GO~~<br>~~TT~~| |---|---|---| |VCE(on)|Collector-to-Emitter Saturation Voltage<br>—<br>2.25<br>2.55<br>V<br>IC= 35A, VGE= 15V<br>~~TT~~|| ||—<br>2.37<br>2.80<br>IC= 22A, VGE= 15V, TJ= 125°C<br>~~TT~~|| |VGE(th)<br>∆VGE(th)/∆TJ<br>gfe<br>ICES<br>VFM<br>IGES|—<br>3.00<br>3.45<br>IC= 35A, VGE= 15V, TJ= 125°C<br>Gate Threshold Voltage<br>3.0<br>4.0<br>5.0<br>V<br>IC= 250µA<br>7,8,9<br>Threshold Voltage temp. coefficient<br>—<br>-10<br>—<br>mV/°C VCE= VGE, IC= 1.0mA<br>Forward Transconductance<br>—<br>36<br>—<br>S<br>VCE= 50V, IC= 22A, PW = 80µs<br>Collector-to-Emitter Leakage Current<br>—<br>3.0<br>375<br>µA<br>VGE= 0V, VCE= 600V<br>—<br>0.35<br>—<br>mA<br>VGE= 0V, VCE= 600V, TJ= 125°C<br>Diode Forward Voltage Drop<br>—<br>1.30<br>1.70<br>V<br>IF= 15A, VGE= 0V<br>10<br>—<br>1.20<br>1.60<br>IF= 15A, VGE= 0V, TJ= 125°C<br>Gate-to-Emitter Leakage Current<br>—<br>—<br>±100<br>nA<br>VGE= ±20V, VCE= 0V<br>~~PT~~<br>~~ee~~<br>~~ee~~<br>~~GN QO~~<br>~~DD~~<br>~~GO~~<br>~~Ee~~<br>~~a~~<br>~~ee~~<br>~~EE~~<br>~~TT~~<br>~~GO~~<br>~~GO~~|| |**Switching Characteristics @ T**|**Characteristics @ TJ = 25°C(unless otherwise specified)**|| ||**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units**<br>**Conditions**|**Ref.Fig**| |Qg|Total Gate Charge(turn-on)<br>—<br>160<br>240<br>IC= 22A<br>~~a~~|17| |Qgc|Gate-to-Collector Charge(turn-on)<br>—<br>55<br>83<br>nC<br>VCC= 400V<br>~~a~~|CT1| |Qge|Gate-to-Emitter Charge(turn-on)<br>—<br>21<br>32<br>VGE= 15V<br>~~a~~|| |Eon|Turn-On SwitchingLoss<br>—<br>220<br>270<br>IC= 22A, VCC= 390V<br>~~a~~|CT3| |Eoff<br>Etotal<br>td(on)|Turn-Off SwitchingLoss<br>—<br>215<br>265<br>µJ<br>VGE= +15V, RG= 3.3Ω, L = 200µH<br>Total SwitchingLoss<br>—<br>435<br>535<br>TJ= 25°C<br>Turn-On delaytime<br>—<br>26<br>34<br>IC= 22A, VCC= 390V<br>~~a~~<br>~~a~~<br>~~®~~<br>~~a~~|CT3| |tr|Rise time<br>—<br>6.0<br>8.0<br>ns<br>VGE= +15V, RG= 3.3Ω, L = 200µH<br>~~a~~|| |td(off)|Turn-Off delaytime<br>—<br>110<br>122<br>TJ= 25°C<br>~~a~~<br>@|| |tf|Fall time<br>—<br>8.0<br>10<br>~~a~~|| |Eon|Turn-On SwitchingLoss<br>—<br>410<br>465<br>IC= 22A, VCC= 390V<br>~~a~~|CT3| |Eoff<br>Etotal<br>td(on)|Turn-Off SwitchingLoss<br>—<br>330<br>405<br>µJ<br>VGE= +15V, RG= 3.3Ω, L = 200µH<br>Total SwitchingLoss<br>—<br>740<br>870<br>TJ= 125°C<br>Turn-On delaytime<br>—<br>26<br>34<br>IC= 22A, VCC= 390V<br>~~a~~<br>~~a~~<br>~~@~~<br>~~a~~|11,13<br>WF1,WF2<br>CT3| |tr|Rise time<br>—<br>8.0<br>11<br>ns<br>VGE= +15V, RG= 3.3Ω, L = 200µH<br>~~a~~|12,14| |td(off)|Turn-Off delaytime<br>—<br>130<br>150<br>TJ= 125°C<br>~~a~~<br>@|WF1,WF2| |tf|Fall time<br>—<br>12<br>16<br>~~ee~~|| |Cies|Input Capacitance<br>—<br>3715<br>—<br>VGE= 0V<br>~~a~~|16| |Coes|Output Capacitance<br>—<br>265<br>—<br>VCC= 30V<br>~~P—CCOE~~|| |Cres<br>Coeseff.<br>Coeseff.(ER)<br>RBSOA<br>trr|Reverse Transfer Capacitance<br>—<br>47<br>—<br>pF<br>f = 1Mhz<br>Effective Output Capacitance (Time Related)<br>—<br>135<br>—<br>VGE= 0V, VCE= 0V to 480V<br>15<br>Effective Output Capacitance (Energy Related)<br>—<br>179<br>—<br>TJ= 150°C, IC= 120A<br>3<br>Reverse Bias Safe Operating Area<br>FULL SQUARE<br>VCC= 480V, Vp =600V<br>CT2<br>Rg= 22Ω, VGE= +15V to 0V<br>Diode Reverse Recovery Time<br>—<br>42<br>60<br>ns<br>TJ= 25°C<br>IF= 15A, VR= 200V,<br>19<br>—<br>74<br>120<br>TJ= 125°C<br>di/dt = 200A/µs<br>~~a~~<br>~~a~~<br>~~P|~~<br>~~eK~~<br>~~pe~~|| |Qrr|Diode Reverse Recovery Charge<br>—<br>80<br>180<br>nC<br>TJ= 25°C<br>IF= 15A, VR= 200V,<br>21<br>—<br>220<br>600<br>TJ= 125°C<br>di/dt = 200A/µs<br>~~FE~~<br>~~ee~~<br>~~PT~~|| |Irr|Peak Reverse Recovery Current<br>—<br>4.0<br>6.0<br>A<br>TJ= 25°C<br>IF= 15A, VR= 200V,<br>19,20,21,22<br>—<br>6.5<br>10<br>TJ= 125°C<br>di/dt = 200A/µs<br>CT5<br>~~a~~<br>~~Pt~~|| |Notes:||| |RCE(on)typ. = equivalent on-resistance = V<br>®|typ. = equivalent on-resistance = VCE(on)typ./ IC, where VCE(on)typ.= 1.85V and IC=22A. ID(FET Equivalent) is the equivalent MOSFET ID|| |rating @ 25°C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.||| |VCC= 80% (V<br>oO)|= 80% (VCES), VGE= 15V, L = 28 µH, RG= 22Ω.|| Notes: Pulse width limited by max. junction temperature. Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06. Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES. Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES. www.irf.com 2 IRGP35B60PDPbF **==> picture [208 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> 70<br>60<br>pt t tt tt<br>50 E NE<br>40 Pt<br>30 PL ENE LL<br>20 P| PLN<br>10 P| ft tL IN |<br>0 Pf} ft t |ttLINNY<br>0 20 40 60 80 100 120 140 160<br> TC (°C)<br>IC (A)<br>**----- End of picture text -----**<br> **Fig. 1** - Maximum DC Collector Current vs. Case Temperature **==> picture [207 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>ee |<br>10<br>1 PPI EP<br>10 100 1000<br>VCE (V)<br>IC A)<br>**----- End of picture text -----**<br> **Fig. 3** - Reverse Bias SOA TJ = 150°C; VGE =15V **==> picture [203 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> 70<br>VGE = 15V<br>60 pL VGE = 12V Yi<br>VGE = 10V<br>50 VGE = 8.0V<br>VGE = 6.0V<br>40<br>30 i) Vi<br><a<br>20<br>NS<br>10<br>YA |<br>0<br>0 1 2 3 4 5<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br> **Fig. 5** - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs **==> picture [208 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> 350<br>300<br>pe ] | tt<br>250 P LN<br>200 EL EL<br>150 pt iN Tt<br>100 SRR RNee<br>500 pitt SERRPtL E TAT RNEEE<br>0 20 40 60 80 100 120 140 160<br> TC (°C)<br>Ptot (W)<br>**----- End of picture text -----**<br> **==> picture [159 x 22] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 2 - Power Dissipation vs. Case<br>Temperature<br>**----- End of picture text -----**<br> **==> picture [203 x 431] intentionally omitted <==** **----- Start of picture text -----**<br> 70<br>VGE = 15V<br>60 VGE = 12V<br>VGE = 10V<br>VGE = 8.0V<br>50<br>VGE = 6.0V<br>40 oo<br>30<br>20<br>100 YT TT<br>0 1 2 3 4 5<br> VCE (V)<br>Fig. 4 - Typ. IGBT Output Characteristics<br>TJ = -40°C; tp = 80µsJ = -40°C; tp = 80µs = -40°C; tp = 80µs<br>70<br>VGE = 15V<br>60 —\ VGE = 12V |<br>VGE = 10V<br>50 VGE = 8.0V<br>VGE = 6.0V<br>40<br>30 NVA<br>WN ae<br>20<br>7 a<br>10<br>ane<br>0<br>0 1 2 3 4 5<br> VCE (V)<br>ICE (A)<br>ICE (A)<br>**----- End of picture text -----**<br> **Fig. 4** - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µsJ = -40°C; tp = 80µs = -40°C; tp = 80µs **Fig. 6** - Typ. IGBT Output Characteristics TJ = 125°C; tp = 80µs www.irf.com 3 ## IRGP35B60PDPbF **==> picture [210 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> 800<br>T = 25°C<br>700 J<br>T = 125°C<br>J<br>600 —- s NYt<br>500 a o n<br>D<br>400<br>e/a<br>300<br>ee Ane<br>200<br>TJ = 125°C<br>100 TJ = 25°C<br>0<br>0 5 10 15 20<br> VGE (V)<br>ICE (A)<br>**----- End of picture text -----**<br> **Fig. 7** - Typ. Transfer Characteristics VCE = 50V; tp = 10µs **==> picture [198 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>9<br>8 ee | ee<br>7<br>ee |<br>6 rT ICE = 11A<br>ICE = 22A<br>5 Ee ICE = 35A<br>4 IE<br>3<br>2<br>1<br>0 5 10 15 20<br> VGE (V)<br>VCE (V)<br>**----- End of picture text -----**<br> **Fig. 8** - Typical VCE vs. VGE TJ = 25°C **==> picture [469 x 429] intentionally omitted <==** **----- Start of picture text -----**<br> 10 100<br>9<br>8 FES] Fee<br>7<br>ICE = 11A<br>6<br>e ee ICE = 22A ee 10 Ene Aen<br>5 ICE = 35A<br>T = 150°CJ<br>4 = C ae =eee T = 125°CJ<br>3 | a I+ T = 25°CJ<br>2<br>a Aa a”<br>1 ee ee 1 Vaan<br>0.8 1.2 1.6 2.0 2.4<br>0 5 10 15 20 Forward Voltage Drop - V (V)FM<br> VGE (V)<br>Fig. 9 - Typical VCE vs. VGE Fig. 10 - Typ. Diode Forward Characteristics<br>TJ = 125°C tp = 80µs<br>800 1000<br>700<br>600 SEE ee = ee es<br>EON tdOFF<br>100<br>500<br>a a n |<br>400 tdON<br>EOFF<br>300 LS 10 tF |_|<br>200<br>tR<br>100 A e e<br>0 Ft tt | | ft 1 ee ee ee ee<br>0 5 10 15 20 25 30 35 40 0 10 20 30 40<br> IC (A) IC (A)<br>F<br>Instantaneous Forward Current - I (A)<br>Swiching Time (ns)<br>VCE (V)<br>Energy (µJ)<br>**----- End of picture text -----**<br> **Fig. 10** - Typ. Diode Forward Characteristics tp = 80µs **Fig. 11** - Typ. Energy Loss vs. IC TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3Ω; VGE = 15V. Diode clamp used: 30ETH06 (See C.T.3) **Fig. 12** - Typ. Switching Time vs. IC TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3Ω; VGE = 15V. Diode clamp used: 30ETH06 (See C.T.3) www.irf.com 4 IRGP35B60PDPbF **==> picture [206 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> 800<br>700<br>600<br>EON<br>500400 |Ltt| Ler| ||<br>EOFF<br>300<br>a n<br>200100 eofPf fTtT<br>0 Ff ft tT<br>0 10 20 30 40 50<br>RG (Ω)<br>Energy (µJ)<br>**----- End of picture text -----**<br> **Fig. 13** - Typ. Energy Loss vs. RG TJ = 125°C; L = 200µH; VCE = 390V, ICE = 22A; VGE = 15V Diode clamp used: 30ETH06 (See C.T.3) **==> picture [216 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>25 ERR<br>20 ERs<br>15<br>10<br>Y<br>5 EEV4GEe<br>0 eo a<br>0 100 200 300 400 500 600 700<br>VCE (V)<br>Eoes (µJ)<br>**----- End of picture text -----**<br> **Fig. 15** - Typ. Output Capacitance Stored Energy vs. VCE **==> picture [201 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>14<br>12 400V<br>10<br>8<br>6<br>4<br>2<br>0<br>0 50 100 150 200<br>Q G, Total Gate Charge (nC)<br>VGE (V)<br>**----- End of picture text -----**<br> **Fig. 17** - Typical Gate Charge vs. VGE ICE = 22A **==> picture [201 x 190] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>tdOFF<br>100 Aj of||<br>a tdON e<br>a tF<br>10<br>a<br>tR<br>i ee on Ss So<br>1 eeFtee[ ee[| es| ee|<br>0 10 20 30 40 50<br>RG (Ω)<br>Swiching Time (ns)<br>**----- End of picture text -----**<br> **Fig. 14** - Typ. Switching Time vs. RG TJ = 125°C; L = 200µH; VCE = 390V, ICE = 22A; VGE = 15V Diode clamp used: 30ETH06 (See C.T.3) **==> picture [205 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>Cies<br>— — _<br>es ==<br>ee ee ee ee<br>1000 a<br>Coes<br>100<br>Aa<br>Cres<br>—<br>fen<br>10 S ee ee eeee a aee ee<br>0 20 40 60 80 100<br>VCE (V)<br>Capacitance (pF)<br>**----- End of picture text -----**<br> **Fig. 16** - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz **==> picture [201 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> 1.4<br>1.2<br>1.0<br>0.8<br>-50 0 50 100 150 200<br>TJ (°C)<br>Normalized VCE(on) (V)<br>**----- End of picture text -----**<br> **Fig. 18** - Normalized Typ. VCE(on) vs. Junction Temperature IC = 22A, VGE= 15V www.irf.com 5 ## IRGP35B60PDPbF **==> picture [200 x 235] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>corn<br>V = 200VR<br>T = 125°CJ<br>T = 25°CJ<br>80 pompttLt<br>I = 30AF<br>ee<br>60<br>I = 15AF<br>wan<br>ane—<br>40 —— — I = 5.0AF a e<br>p S<br>oh<br>20 ||| Pr<br>100 1000<br>di /dt - (A/µs)f<br>rr<br>t - (ns)<br>**----- End of picture text -----**<br> **==> picture [202 x 238] intentionally omitted <==** **----- Start of picture text -----**<br> 100 ———<br>V = 200VR<br>| T = 125°CT = 25°CJJ yt<br>LSettT<br>a I = 30AF<br>=<br>ee I = 15AF<br>10<br>Ft s—i‘izdz 2% 19 4g4m<br>ee ae<br>I = 5.0AF<br>werSs Lo( | |<br>Va n e<br>1 ll<br>100 1000<br>di /dt - (A/µs)f<br>IRRM<br>I - (A)<br>**----- End of picture text -----**<br> **==> picture [484 x 238] intentionally omitted <==** **----- Start of picture text -----**<br> 800 1000 )——#£—_<br>en V = 200VT = 125°CT = 25°CRJJ OL || V = 200VT = 125°CT = 25°CRJJ Are|__| | | glAyYZ<br>600<br>I = 30AF<br>ell —<br>= eee ry Aan<br>anes I = 5.0AF Wy<br>400<br>I = 15AF a a > |f I = 15AF | f 7 y .<br>e I = 5.0AF a I = 30AF Vyf<br>et NL y<br>200<br>—S——<br>0 100<br>100 1000 100 1000<br>di /dt - (A/µs)f di /dt - (A/µs)f<br>RR<br>Q - (nC)<br>di(rec)M/dt - (A/µs)<br>**----- End of picture text -----**<br> www.irf.com 6 IRGP35B60PDPbF **==> picture [478 x 468] intentionally omitted <==** **----- Start of picture text -----**<br> Tear Rectitier<br>1<br>D = 0.50<br>me TTT<br>0.1 0.20<br>CC<br>0.10 e e ee et 0 ee ee ee ee ee eee ee ee ee<br>0.01 0.050.01 SS anhaeH τJ τ ee J R1 R1 R2 R2 R3R3 τ e Cτ 0S Ri (°C/W) 0.139 0.000257 ee ee τi (sec) |<br>0.02 τ1τ1 τ2 τ2 τ3τ3 0.077 0.001418<br>a e T T T -—<br>0.001 e s ei ee ee| ee TT Ci= Ciτi/Rii/Ri rd 0.194 0.020178 l<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>a ee ee eee ee eee 2. Peak Tj = P dm x Zthjc + Tc LI<br>0.0001 PT il<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)<br>10<br>a a a a | |<br>1 D = 0.50<br>0.2 0 e e | | mmm | | | tity<br>0.1 0.050.10 AS ecN τJ τ e J | ign R1 R1 R2 R2 R3R3 || τCτRi (°C/W) 0.363 0.000112 τi (sec) |<br>— 0.02 S 0.01 et τ1τ1 τ2 τ2 τ3τ3 0.864 0.001184<br>ea ee ee ee |<br>Ci= τi/Ri 0.473 0.032264<br>0.01 Ci i/Ri<br>Notes:<br>SINGLE PULSE<br>1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE )<br>| | ee ee 2. Peak Tj = P dm x Zthjc + Tc al<br>a a |<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br> **Fig. 24.** Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 7 IRGP35B60PDPbF **==> picture [436 x 92] intentionally omitted <==** **----- Start of picture text -----**<br> L<br>L<br>VCC<br>DUT 80 V DUT<br>0 480V<br>1K Rg<br>**----- End of picture text -----**<br> **Fig.C.T.1** - Gate Charge Circuit (turn-off) **Fig.C.T.2** - RBSOA Circuit **==> picture [448 x 96] intentionally omitted <==** **----- Start of picture text -----**<br> VCC<br>PFC diode L R =<br>ICM<br>DUT /<br>VCC<br>DRIVER DUT VCC<br>Rg<br>Rg<br>**----- End of picture text -----**<br> **Fig.C.T.3** - Switching Loss Circuit **Fig.C.T.4** - Resistive Load Circuit ## REVERSE RECOVERY CIRCUIT **==> picture [105 x 100] intentionally omitted <==** **----- Start of picture text -----**<br> V = 200VR<br>0.01 Ω<br>L = 70µH<br>D.U.T.<br>D<br> dif/dt<br>ADJUST G IRFP250<br>S<br>**----- End of picture text -----**<br> **Fig. C.T.5** - Reverse Recovery Parameter Test Circuit www.irf.com 8 ## IRGP35B60PDPbF **==> picture [231 x 234] intentionally omitted <==** **----- Start of picture text -----**<br> 450400 Poh A 4540<br>tf<br>350 35<br>300 30<br>250 90% ICE 25<br>200 20<br>5% VCE<br>150 15<br>100 10<br>5% ICE<br>50 5<br>0 i, [aes 0<br>Eoff Loss<br>-50 -5<br>-0.20 0.00 0.20 0.40 0.60 0.80<br>Time(µs)<br> (V) (A)<br>VCE ICE<br>**----- End of picture text -----**<br> **Fig. WF1** - Typ. Turn-off Loss Waveform @ TJ = 25°C using Fig. CT.3 **==> picture [228 x 235] intentionally omitted <==** **----- Start of picture text -----**<br> 450 45<br>400 ee | ee 40<br>TEST CURRENT<br>350 35<br>300 ‘ 7 30<br>tr m i a<br>250 25<br>90% test current<br>200 20<br>10% test current<br>150 15<br>100 10<br>50 5% V CE 5<br>0 — = Eon Loss — 0<br>-50 -5<br>9.00 9.20 9.40 9.60<br>Time (µs)<br> (V) (A)<br>VCE ICE<br>**----- End of picture text -----**<br> **Fig. WF2** - Typ. Turn-on Loss Waveform @ TJ = 25°C using Fig. CT.3 **==> picture [312 x 140] intentionally omitted <==** **----- Start of picture text -----**<br> 3<br>IF trr<br>ta tb<br>0<br>H<br>H<br>: :: y“ 4<br>Q rr<br>:Po:oO 2 I RRM ’“ 0.5 I RRM<br>H: 2<br>:‘¢ di(rec)M/dt 5<br>0.75 IRRM<br>a—<br>1 di /dtf<br>**----- End of picture text -----**<br> **Fig. WF3** - Reverse Recovery Waveform and Definitions www.irf.com 9 ## IRGP35B60PDPbF **==> picture [268 x 77] intentionally omitted <==** **----- Start of picture text -----**<br> EXAMPLE: THIS IS AN IRFPE30<br>WITH ASSEMBLY PART NUMBER<br>LOT CODE 5657 INTERNATIONAL Dod<br>ASSEMBLED ON WW 35, 2000 RECTIFIER IRFPE30<br>LOGO 035H<br>IN THE ASSEMBLY LINE "H"<br>on 56 57 7<br>Note: "P" in assembly line DATE CODE<br>position indicates "Lead-Free" ASSEMBLY YEAR 0 = 2000<br>LOT CODE WEEK 35<br>LINE H<br>**----- End of picture text -----**<br> ## **TO-247AC package is not recommended for Surface Mount Application.** Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. **IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 6/04 www.irf.com 10 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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