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IRGP30B120KD-EP
IGBT, 60 A, 2.28 V, 300 W, 1.2 kV, TO-247AD, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Power Dissipation: 300W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247AD
- Operating Temperature Max: 150°C
- Continuous Collector Current: 60A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 2.28V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 4.83 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE**
## **Features**
- Low VCE(on) Non Punch Through (NPT) Technology
- Low Diode VF (1.76V Typical @ 25A & 25°C)
- 10 μs Short Circuit Capability
- Square RBSOA
- Ultrasoft Diode Recovery Characteristics
- Positive VCE(on) Temperature Coefficient
- Extended Lead TO-247AD Package
## **Motor Control Co-Pack IGBT**
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C<br>VCES = 1200V<br>V = 2.28V<br>CE(on) typ.<br>G<br>VGE = 15V, IC = 25A, 25°C<br>E<br>N-channel<br>**----- End of picture text -----**<br>
- Lead-Free
## **Benefits**
- Benchmark Efficiency for Motor Control Applications
- Rugged Transient Performance
- Low EMI
- Significantly Less Snubber Required
- Excellent Current Sharing in Parallel Operation
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TO-247AD<br>**----- End of picture text -----**<br>
- Longer leads for Easier Mounting
|**Form**<br>**Quantity**<br>**Package Type**<br>**Standard Pack**<br>**Orderable Part Number**<br>**Base Part Number**|**Orderable Part Number**|**Orderable Part Number**|
|---|---|---|
|IRGP30B120KD-EP<br>TO-247AD<br>Tube<br>25<br>IRGP30B120KD-EP|||
|**Absolute Maximum Ratings**|||
|**Parameter**<br>**Max.**<br>VCES<br>Collector-to-Emitter Breakdown Voltage<br>1200<br>IC@ TC= 25°C<br>Continuous Collector Current(Fig.1)<br>60<br>IC@ TC= 100°C<br>Continuous Collector Current(Fig.1)<br>30<br>ICM<br>Pulsed Collector Current(Fig.3, Fig. CT.5)<br>120<br>ILM<br>Clamped Inductive Load Current(Fig.4, Fig. CT.2)<br>120<br>IF@ TC= 100°C<br>Diode Continuous Forward Current<br>30<br>IFM<br>Diode Maximum Forward Current<br>120<br>VGE<br>Gate-to-Emitter Voltage<br>± 20<br>PD@ TC= 25°C<br>Maximum Power Dissipation(Fig.2)<br>300<br>PD@ TC= 100°C<br>Maximum Power Dissipation(Fig.2)<br>120<br>TJ<br>Operating Junction and<br>-55 to + 150<br>TSTG<br>Storage Temperature Range<br>SolderingTemperature, for 10 seconds<br>300, (0.063 in. (1.6mm) from case)<br>Mounting Torque, 6-32 or M3 screw.<br>10 lbf•in (1.1N•m)<br>~~**e**een G~~<br>~~PO~~<br>~~es~~<br>~~es~~<br>~~esOo~~<br>~~a~~<br>~~a+.~~<br>~~Sp~~<br>~~a~~<br>~~ee ee~~<br>~~a~~||**Units**<br>V<br>A<br>V<br>°C<br>~~W~~|
|**Thermal Resistance**|||
|**Parameter**<br>**Min.**<br>**Typ.**<br>**Max.**<br>RθJC<br>Junction-to-Case - IGBT<br>–––<br>–––<br>0.42<br>RθJC<br>Junction-to-Case - Diode<br>–––<br>–––<br>0.83<br>~~**e**s~~<br>~~G~~<br>~~GG~~<br>~~GG~~||**Units**<br>°C/W|
|RθCS<br>Case-to-Sink, flat,greased surface<br>–––<br>0.24<br>–––<br>RθJA<br>Junction-to-Ambient, typical socket mount<br>–––<br>–––<br>40<br>~~**a**~~|||
|Wt<br>Weight<br>–––<br>6(0.21)<br>–––<br>~~ee~~||g (oz)|
|ZθJC<br>Transient Thermal Impedance Junction-to-Case(Fig.24)|||
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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**
||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|**Fig.**|
|---|---|---|---|---|---|---|---|
|V(BR)CES|Collector-to-Emitter Breakdown Voltage|1200|||V|VGE= 0V,Ic=250μA||
|ΔV(BR)CES/ΔTj|Temperature Coeff. of Breakdown Voltage||+1.2||V/°C|VGE= 0V,Ic= 1 mA(25 -125oC)||
|VCE(on)|Collector-to-Emitter Saturation<br>Voltage||2.28|2.48|V|IC= 25A, VGE= 15V|5, 6<br>7, 9<br>10<br>11|
||||2.46|2.66||IC= 30A, VGE= 15V||
||||3.43|4.00||IC= 60A, VGE= 15V||
||||2.74|3.10||IC= 25A, VGE= 15V, TJ= 125°C||
||||2.98|3.35||IC= 30A, VGE= 15V, TJ= 125°C||
|VGE(th)|Gate Threshold Voltage|4.0|5.0|6.0|V|VCE= VGE, IC= 250μA|9,10,11,12|
|ΔVGE(th)/ΔTj|Temperature Coeff. of Threshold Voltage||- 1.2||mV/oC|VCE= VGE,IC= 1 mA(25 -125oC)||
|gfe|Forward Transconductance|14.8|16.9|19.0|S|VCE= 50V, IC= 25A, PW=80μs||
|ICES|Zero Gate Voltage Collector Current|||250|μA|VGE= 0V,VCE= 1200V||
||||325|675||VGE= 0v, VCE= 1200V, TJ=125°C||
|||||2000||VGE= 0v, VCE= 1200V, TJ=150°C||
|VFM|Diode Forward Voltage Drop||1.76|2.06|V|IC= 25A|8|
||||1.86|2.17||IC= 30A||
||||1.87|2.18||IC= 25A, TJ= 125°C||
||||2.01|2.40||IC= 30A, TJ= 125°C||
|IGES|Gate-to-Emitter Leakage Current|||±100|nA|VGE= ±20V||
|**Switching Characteristics @ TJ = 25°C**||**(unless otherwise specified)**||||||
||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|**Fig.**|
|Qg|Total Gate charge(turn-on)||169|254|nC|IC= 25A<br>VCC=600V<br>VGE= 15V|23<br>CT 1|
|Qge|Gate - Emitter Charge(turn-on)||19|29||||
|Qgc|Gate - Collector Charge (turn-on)||82|123||||
|Eon|Turn-On SwitchingLoss||1066|1250|μJ|IC= 25A, VCC= 600V<br>VGE= 15V, Rg = 5Ω,L=200μH<br>TJ= 25oC, Energy losses include tail<br>and diode reverse recovery|CT 4<br>WF1<br>WF2|
|Eoff|Turn-Off SwitchingLoss||1493|1800||||
|Etot|Total Switching Loss||2559|3050||||
|Eon|Turn-on SwitchingLoss||1660|1856|μJ|Ic =25A, VCC=600V<br>VGE= 15V, Rg = 5Ω,L=200μH<br>TJ= 125oC, Energy losses include tail<br>and diode reverse recovery|13, 15<br>CT 4<br>WF1 & 2|
|Eoff|Turn-off SwitchingLoss||2118|2580||||
|Etot|Total Switching Loss||3778|4436||||
|td(on)|Turn - on delaytime||50|65|ns|Ic =25A, VCC=600V<br>VGE= 15V, Rg = 5Ω,L=200μH<br>TJ= 125oC,|14, 16<br>CT 4<br>WF1<br>WF2|
|tr|Rise time||25|35||||
|td(off)|Turn - off delaytime||210|230||||
|tf|Fall time||60|75||||
|Cies|Input Capacitance||2200||pF|VGE= 0V<br>VCC= 30V<br>f = 1.0 MHz|22|
|Coes|Output Capacitance||210|||||
|Cres|Reverse Transfer Capacitance||85|||||
|RBSOA|Reverse bias safe operating area|FULL SQUARE||||TJ=150oC, Ic = 120A<br>VCC= 1000V, VP= 1200V<br>Rg= 5Ω, VGE= +15V to 0 V|4<br>CT 2|
|SCSOA|Short Circuit Safe Operating Area|10|----|----|μs|TJ= 150oC<br>VCC= 900V,VP= 1200V<br>Rg= 5Ω, VGE= +15V to 0 V|CT 3<br>WF4|
|Erec|Reverse recoveryenergyof the diode||1820|2400|μJ|TJ= 125oC<br>VCC= 600V, Ic = 25A<br>VGE= 15V, Rg= 5Ω,L=200μH|17,18,19<br>20, 21<br>CT 4, WF3|
|trr|Diode Reverse recoverytime||300||ns|||
|Irr|Peak Reverse Recovery Current||34|38|A|||
|Le|Internal Emitter Inductance||13||nH|Measured 5 mm from thepackage.||
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_Fig.1 - Maximum DC Collector Current vs. Case Temperature_
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70<br>ee<br>ee<br>60 TN NX<br>50 PONE<br>PCP NEE<br>40<br>Po NN<br>rs oN<br>30<br>ee<br>PeaoN<br>20<br>ee<br>i<br>10 \<br>oN<br>a<br>0<br>0 40 80 120 160<br>T C (°C)<br> ( A )<br>C<br>I<br>**----- End of picture text -----**<br>
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Fig.3 - Forward SOA<br>T C=25°C; Tj < 150°C<br>1000<br>PULSED<br>LIE I |<br>2μs<br>100 ae<br>Ed 10μs<br>100μs<br>10 PU NUIN ENTE TE<br>SEEN Nr 1ms<br>1<br>a NT 10ms<br>SS DC<br>0.1 BEET NERAhacen EN<br>1 10 100 1000 10000<br>V CE (V)<br> ( A )<br>C<br>I<br>**----- End of picture text -----**<br>
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Fig.2 - Power Dissipation vs. Case<br>Temperature<br>**----- End of picture text -----**<br>
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320<br>a<br>280 a<br>240 P|pf ANY | tfTttftT<br>EN<br>200<br>NS<br>PINE<br>160 ee a<br>PEP NE<br>120<br>PpPy<br>80<br>Pf ttt KET<br>ee<br>ee<br>40 A4-4-4<br>aNJ<br>0<br>0 40 80 120 160<br>T C (°C)<br> ( W )<br>t o t<br>P<br>**----- End of picture text -----**<br>
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Fig.4 - Reverse Bias SOA<br>Tj = 150°C, V GE = 15V<br>1000<br>aee<br>TTT<br>100<br>A<br>AA<br>10<br>Sei mectideett atc<br>TT Bail)<br>1 Oy UIT LAL<br>1 10 100 1000 10000<br>V CE (V)<br> ( A )<br>C<br>I<br>**----- End of picture text -----**<br>
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Fig.5 - Typical IGBT Output<br>Characteristics<br>Tj= -40°C; tp=300μs<br>60<br>V GE = 18V<br>55 V GE = 15V po<br>50 V GE = 12V | ae<br>V GE = 10V<br>45<br>V GE = 8V > a<br>40 \ |i<br>35 — \IN<br>30 en) Ge<br>—<br>25 OK<br>2015 — ff \<br>10<br>JSnn<br>5 7 Ane<br>0<br>0 1 2 3 4 5 6<br>V CE (V)<br>Fig.7 - Typical IGBT Output<br>Characteristics<br>Tj=125°C; tp=300μs<br>60<br>55 V GE = 18V Tf<br>50 V GE = 15V<br>V GE = 12V<br>45 V GE = 10V NYYY / UA<br>40 V GE = 8V HW SZ -<br>35<br>30 ee a|)<br>25<br>KR<br>20 e/a<br>15 UN<br>10<br>5 Fa"4<br>0 Ane<br>0 1 2 3 4 5 6<br>V CE (V)<br> ( A )<br>C<br>I<br> ( A )<br>C<br>I<br>**----- End of picture text -----**<br>
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Fig.6 - Typical IGBT Output<br>Characteristics<br>Tj=25°C; tp=300μs<br>60<br>55 V GE = 18V YT}<br>V GE = 15V<br>50<br>V GE = 12V SY [f]<br>45 V GE = 10V<br>I} ——<br>40 V GE = 8V YT [fo]<br>35 Yo<br>3025 eeeee|/| ae e<br>20<br>15 ee eee<br>10<br>5 y<br>0 Ae<br>0 1 2 3 4 5 6<br>V CE (V)<br>Fig.8 - Typical Diode Forward<br>Characteristic<br>tp=300μs<br>60<br>55 - 40°C fof<br> 25°C<br>50<br>125°C<br>45 - SUP<br>YO<br>40 eee pief<br>35<br>30 ee eeese<br>25<br>22) eee<br>20 fe<br>15 | ae<br>10<br>5 /{<br>4A<br>0<br>0 1 2 3 4<br>V F (V)<br> ( A )<br>C<br>I<br> ( A )<br>F<br>I<br>**----- End of picture text -----**<br>
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Fig.9 - Typical V CE vs V GE<br>Tj= -40°C<br>20 1 eee<br>18 nt ee<br>161412 itet eeeee<br>ite<br>10 I CE =10A<br>8 nn ee I CE =25A<br>I CE =50A<br>6<br>IY,<br>4 404 oe<br>2 (kA<br>0 | TLL<br>6 8 10 12 14 16 18 20<br>V GE (V)<br>Fig.11 - Typical V CE vs V GE<br>Tj= 125°C<br>20<br>18<br>TPE<br>16 PPP<br>a0 ee<br>14<br>PPP<br>12 TEL<br>10<br>I CE =10A<br>8 ate, I CE =25A<br>I CE =50A<br>6 LLY<br>4<br>WOK<br>2<br>oC.7<br>0<br>6 8 10 12 14 16 18 20<br>V GE (V)<br> ( V )<br>C E<br>V<br> ( V )<br>C E<br>V<br>**----- End of picture text -----**<br>
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Fig.10 - Typical V CE vs V GE<br>Tj= 25°C<br>20<br>18 TTT<br>16 {Tp<br>14 TEP<br>12 0<br>10 TTT I CE =10A<br>I CE =25A<br>8 ee,<br>I CE =50A<br>6<br>mip<br>4 HT fe<br>2 ~eo-—<br>0 |TTT<br>6 8 10 12 14 16 18 20<br>V GE (V)<br>Fig.12 - Typ. Transfer Characteristics<br>V CE=20V; tp=20μs<br>250<br>Tj=25°C<br>225<br>Tj=125°C<br>oY<br>200 /a<br>175 ee<br>150 eeae<br>125 ee ae<br>100<br>fe<br>75 ee ae<br>50<br>fe<br>Tj=125°C<br>25<br>Tj=25°C<br>0 if\<br>0 4 8 12 16 20<br>V GE (V)<br> ( V )<br>C E<br>V<br> ( A )<br>C<br>I<br>**----- End of picture text -----**<br>
_Fig.13 - Typical Energy Loss vs Ic Tj=125°C; L=200μH; V CE =600V; Rg=22_ Ω _; V GE =15V_
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Fig.14 - Typical Switching Time vs Ic<br>Tj=125°C; L=200μH; V CE =600V;<br>Rg=22 Ω ;V GE =15V<br>**----- End of picture text -----**<br>
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8000 1000<br>Eon<br>7000<br>tdoff<br>6000 2, eEEEEL<br>Eoff<br>=e LPP SCE<br>5000<br>tf<br>tr<br>oae/4n CCePErP eee<br>4000 100<br>Ya<br>3000<br>tdon<br>2000<br>Of cere<br>1000<br>0 ATTanna 10 etLEE<br>0 10 20 30 40 50 60<br>0 10 20 30 40 50 60<br>I C (A) I C (A)<br>Fig.15 - Typical Energy Loss vs Rg Fig.16 - Typical Switching Time vs Rg<br>Tj=125°C; L=200μH; V CE =600V; Tj=125°C; L=200μH; V CE =600V;<br>I CE =25A; V GE =15V I CE =25A; V GE =15V<br>3500 1000<br>3300 Eon tdoff<br>3100 PS a Binpeceaeee<br>2900 PLL TE LY aS? 4Seeeen5<br>TTT YY EZenneeeeee<br>2700<br>Eoff<br>tdon<br>2500 100<br>ot ITE<br>2300 tr<br>tf<br>2100 ZT o> aeeeeee<br>1900<br>Yo Bagh<br>1700<br>1500 ECC 10 ELLER LE<br>0 5 10 15 20 25 30 35 40 45 50 55 0 5 10 15 20 25 30 35 40 45 50 55<br>Rg (ohms) Rg (ohms)<br>t ( n S )<br>E n e r g y ( μ J )<br>t ( n S )<br>E n e r g y ( u J )<br>**----- End of picture text -----**<br>
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Fig.17 - Typical Diode I RR vs I F Fig.18 - Typical Diode I RR vs Rg<br>Tj=125°C Tj=125°C; I F=25A<br>45 COO 45 a<br>40 PEEP EEE rrr 40 a<br>PEEP Ere rrr a<br>35 35<br>SN pees uusuee<br>Rg=5 Ω<br>30 LAKE 30 a<br>[COE ERX EEE AEE<br>25 ota ee \enne 25 FACE<br>Rg=10 Ω<br>20 DE ANSREER 20 FERC EEEEE EY<br>Rg=22 Ω<br>15 oN 15 PS<br>tN CCE ETS<br>Rg=51 Ω<br>10 PO FP E PSRETEEEPN-A 10 a<br>5 5<br>Sane ann PEER<br>0 PEEP Err rr 0 FEE EEE<br>0 10 20 30 40 50 60 0 5 10 15 20 25 30 35 40 45 50 55<br>I F (A) Rg (ohms)<br>Fig.19 - Typical Diode I RR vs dI F /dt<br>Fig.20 - Typical Diode Q RR<br>V CC =600V; V GE=15V V CC =600V; V GE =15V; Tj=125°C<br>45 I F =25A; Tj=125°C 7000<br>10 Ω 5 Ω<br>40 P| | Tt 6500 _ 22 Ω 50A<br>35 Rg=5 Ω 6000 51 Ω<br>40A<br>30 ye 5500 vae<br>30A<br>PP ye ioe<br>25 5000<br>25A<br>oven mifiae<br>Rg=10 Ω<br>20 4500<br>awa eam 20A<br>15 aA Rg=22 Ω 4000 Pen<br>10 Rg=51 Ω 3500<br>5 aPf yt || 3000 —f ftp<br>0 Pt | TyTt 2500 tet|e|<br>0 500 1000 1500<br>0 500 1000 1500<br>dI F / dt (A/μs) dI F / dt (A/μs)<br> ( A ) ( A )<br>R R R R<br>I I<br> ( A ) ( n C )<br>R R R R<br>I Q<br>**----- End of picture text -----**<br>
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Fig.21 - Typ. Diode E rec vs. I F<br>Tj=125°C<br>2400<br>TTL LETT<br>5 Ω<br>2200 COCO<br>10 Ω<br>22 Ω<br>2000 PoSEnnenyee<br>po oo<br>51 Ω<br>1800 fhya<br>OW<br>1600 sen0///4eeen0<br>Sen)///eeene<br>1400 oe0//eeeueee<br>Se////ARReeee<br>1200 on//Seneeeee<br>on//Aeeeeeee<br>1000 n/Senses<br>COCO<br>800 Seeeeeeeeeee<br>0 10 20 30 40 50 60<br>I F (A)<br>E n e r g y ( u J )<br>**----- End of picture text -----**<br>
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Fig.22 - Typical Capacitance vs V CE<br>V GE =0V; f=1MHz<br>10000 =S===S====<br>C ies<br>EEenGnnaeerr<br>1000 PTET [ET] [TT]<br>==<br>ee<br>ISS C oes<br>100 KOPP SSE<br>NJ |<br>a= SSSSSeE[—<br>Ef Ce |<br>Po<br>10 PPE<br>0 20 40 60 80 100<br>V CE (V)<br>C a p a c I t a n c e ( p F )<br>**----- End of picture text -----**<br>
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Fig.23 - Typ. Gate Charge vs. V GE<br>I C=25A; L=600μH<br>16<br>14 SSeSSeeeee 600V<br>12 .ooeee| 800V ae<br>Seeeeny) aan<br>10 eee /7Geee<br>Seen 45558<br>8<br>SAE =<br>6<br>EEE Ceo<br>Ey<br>4<br>FEEEEEEEE<br>2<br>[i<br>OCC eee<br>0 i<br>0 40 80 120 160 200<br>Q G , Total Gate Charge (nC)<br> ( V )<br>G E<br>V<br>**----- End of picture text -----**<br>
## _Fig.24 - Normalized Transient Thermal Impedance, Junction-to-Case_
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10 — a<br>A GO GO<br>aa eeA a A OC OOeeeCeeOO eeCOee eeCOeee<br>pT EP<br> ESHIEE HIE HIE ETEFEES<br>|<br>1<br>D =0.5<br>SSat Saasee eeSee.a a |<br>a — ee eeeee<br>a Py<br>0.2<br>/ | hE al|<br>Mj<br>0.1 —_ GQ oy<br>BA | i<br>0.1 | [UU] Apoe| LI ip, (| i opp|iypepe| YT<br>0.05<br>= eeeO—iCa ee 0 ee eee II<br>P DM<br>ee | 9 All en)<br>0.02<br>= A t 1 |<br>0.01<br>0.01 pA fl |<br>pt | om t 2 ia<br>|ago i Notes: p , iJ<br>wr ty St l<br>PT TT 1. Duty factor D = t 1 / t 2 |<br>SINGLE 2. Peak T J = P DM x Z thJC + T C<br>PULSE<br>0.001<br>0.00001 0.00010 0.00100 0.01000 0.10000 1.00000 10.00000<br>t 1 , Rectangular Pulse Duration (sec)<br>θ<br>**----- End of picture text -----**<br>
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L<br>L<br>VCC 80 V<br>DUT<br>DUT<br>0 1000V<br>Rg<br>1K<br>**----- End of picture text -----**<br>
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Driver<br>DC 900V<br>DUT<br>**----- End of picture text -----**<br>
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diode clamp /<br>DUT<br>L<br>- 5V<br>DUT /<br>DRIVER VCC<br>Rg<br>**----- End of picture text -----**<br>
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VCC<br>R =<br>ICM<br>DUT<br>VCC<br>Rg<br>**----- End of picture text -----**<br>
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800 40<br>700 35<br>600 30<br>90% ICE<br>500 25<br>400 20<br>t f<br>300 15<br>200 10<br>5% VCE<br>100 5<br>5% ICE<br>0 0<br>Eoff Loss<br>-100 -5<br>-0.5 0.0 0.5 1.0 1.5 2.0 2.5<br>t I me (μs)<br> ( V ) ( A )<br>C E C E<br>V I<br>**----- End of picture text -----**<br>
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0 30<br>-200 20<br>QRR<br>tRR<br>-400 10<br>-600 0<br>10%<br>Peak<br>-800 -10<br>IRR<br>Peak<br>IRR<br>-1000 -20<br>-1200 -30<br>-0.5 0.0 0.5 1.0<br>t I me (μS)<br> ( V ) ( A )<br>V C E I C E<br>**----- End of picture text -----**<br>
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900 45<br>800 40<br>700 35<br>TEST CURRENT<br>600 30<br>500 25<br>90% test current<br>400 20<br>t r<br>300 15<br>10% test current<br>200 10<br>5% VCE<br>100 5<br>0 0<br>Eon Loss<br>-100 -5<br>4.0 4.1 4.2 4.3 4.4 4.5<br>t I me (μs)<br> ( V ) ( A )<br>C E C E<br>V I<br>**----- End of picture text -----**<br>
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1200 250<br>1000 200<br>800 150<br>600 100<br>400 50<br>200 0<br>0 -50<br>-10 0 10 20 30<br>t i me (μs)<br> ( V ) ( A )<br>C E C E<br>V I<br>**----- End of picture text -----**<br>
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EXAMPLE: THIS IS AN IRGP30B120KD-E<br>WITH ASSEMBLY PART NUMBER<br>LOT CODE 5657 INTERNATIONAL Dog<br>ASSEMBLED ON WW 35, 2000 RECTIFIER | IRG P SOB 120KD -E<br>LOGO IeaR 035H<br>IN THE ASSEMBLY LINE "H"<br>56 57<br>DATE CODE<br>ASSEMBLY YEAR 0 = 2000<br>Note: "P" in assembly line position<br>LOT CODE WEEK 35<br>indicates "Lead-Free"<br>LINE H<br>**----- End of picture text -----**<br>
**Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/**
|**Qualification information**<br>†|||
|---|---|---|
|Qualification level|Industrial<br>(per JEDEC JES D47F<br>††guidelines)||
|Moisture Sensitivity Level|TO-247AD|N/A|
|RoHS compliant|Yes||
- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
- †† Applicable version of JEDEC standard at the time of product release
## **Revision History**
|**Date**|**Comment**|
|---|---|
||•Updated data sheet with IR corporate template.|
|5/29/2014|•Updated package outline on page 12.<br>•Added pin assignment "G,C,E" on page 1.|
||•Added Qualification table-Qual level"Industrial"on page 13.|
**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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