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IRGP20B60PDPBF
IGBT, 40 A, 2.35 V, 220 W, 600 V, TO-247AC, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Product Range: IRGP
- Power Dissipation: 220W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247AC
- Operating Temperature Max: 150°C
- Continuous Collector Current: 40A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 2.35V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 3.51 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **SMPS IGBT**
## IRGP20B60PDPbF
## WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
## **Applications**
- Telecom and Server SMPS
- PFC and ZVS SMPS Circuits
- Uninterruptable Power Supplies
- Consumer Electronics Power Supplies
- Lead-Free
## **Features**
- NPT Technology, Positive Temperature Coefficient
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C<br>G<br>E<br>n-channel<br>**----- End of picture text -----**<br>
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VCES = 600V<br>VCE(on) typ. = 2.05V<br>@ VGE = 15V IC = 13.0A<br>**----- End of picture text -----**<br>
**Equivalent MOSFET Parameters** RCE(on) typ. = 158mΩ ID (FET equivalent) = 20A
- Lower VCE(SAT)
- Lower Parasitic Capacitances
- Minimal Tail Current
- HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
- Tighter Distribution of Parameters
- Higher Reliability
## **Benefits**
- Parallel Operation for Higher Current Applications
- Lower Conduction Losses and Switching Losses
- Higher Switching Frequency up to 150kHz
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E<br>G [C]<br>TO-247AC<br>**----- End of picture text -----**<br>
## **Absolute Maximum Ratings**
|**Absolute Maximum Ratings**|**Absolute Maximum Ratings**<br>**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VCES|Collector-to-Emitter Voltage<br>~~[i~~|600<br>~~[i~~|V<br>~~[i~~|
|IC @TC= 25°C|Continuous Collector Current<br>~~[i~~|40<br>~~[i~~<br>~~[~~|A<br>~~[i~~<br>~~[~~|
|IC @TC= 100°C|ContinuousCollectorCurrent<br>~~a~~|22<br>~~a~~||
|ICM|Pulse Collector Current(Ref. Fig. C.T.4)<br>~~a~~|80<br>~~a~~||
|ILM|Clamped Inductive Load Current<br>~~a~~|80<br>~~a~~||
|IF @TC= 25°C|Diode Continous Forward Current<br>~~a~~|31<br>~~a~~||
|IF @TC= 100°C|DiodeContinous ForwardCurrent<br>~~a~~|12<br>~~a~~||
|IFRM|Maximum Repetitive Forward Current<br>~~LC~~|42<br>~~LC~~||
|VGE|Gate-to-Emitter Voltage|±20|V|
|PD @TC= 25°C|Maximum Power Dissipation<br>~~ae~~<br>~~a~~|220<br>~~ae~~<br>~~a~~|W<br>~~ae~~|
|PD @TC= 100°C<br>~~po~~|Maximum Power Dissipation<br>~~ae~~<br>~~po~~|86<br>~~ae~~||
|TJ<br>TSTG<br>~~po~~|Operating Junction and<br>Storage Temperature Range<br>~~ae~~<br>~~ee~~<br>~~po~~|-55 to +150<br>~~ae~~<br>~~ee~~|°C<br>~~ae~~<br>~~ZZ~~|
|~~po~~|SolderingTemperature,for 10sec.<br>~~po~~|300 (0.063in.(1.6mm)from case)||
|~~po~~|MountingTorque,6-32 or M3 Screw<br>~~po~~<br>~~ooo~~|10 lbf·in(1.1 N·m)<br>~~ooo~~|~~ooo~~<br>~~ZZ~~|
## **Thermal Resistance**
||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|---|
|RθJC (IGBT)|Thermal Resistance Junction-to-Case-(each IGBT)|–––|–––|0.58|°C/W|
|RθJC (Diode)|Thermal Resistance Junction-to-Case-(each Diode)|–––|–––|2.5||
|RθCS|Thermal Resistance,Case-to-Sink(flat, greased surface)|–––|0.24|–––||
|RθJA|Thermal Resistance,Junction-to-Ambient(typical socket mount)|–––|–––|40||
||Weight|–––|6 (0.21)|–––|g (oz)|
## IRGP20B60PDPbF
## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**
|~~a~~|**Parameter**<br>~~a~~|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|**Ref.Fig**|
|---|---|---|---|---|---|---|---|
|Qg<br>~~a~~<br>~~PC~~|Total Gate Charge(turn-on)<br>~~a~~<br>~~PC~~|—<br>|68<br>|102<br>|nC|IC= 13A<br>VCC= 400V<br>VGE= 15V|17<br>CT1|
|Qgc<br>~~a~~<br>~~PC~~|Gate-to-Collector Charge(turn-on)<br>~~a~~<br>~~PC—OTC“‘SEE~~|—<br>~~—OTC“‘SEE~~|24<br>~~—OTC“‘SEE~~|36<br>~~—OTC“‘SEE~~||||
|Qge<br>~~PC~~<br>~~PC~~|Gate-to-Emitter Charge(turn-on)<br>~~PC~~<br>~~a~~<br>~~PC~~|—<br><br>~~a~~<br>|10<br><br>~~a~~<br>|15<br><br>~~a~~<br>||||
|Eon<br>~~PC~~|Turn-On SwitchingLoss<br>~~PC—OTC“‘SEE~~|—<br>~~—OTC“‘SEE~~|95<br>~~—OTC“‘SEE~~|140<br>~~—OTC“‘SEE~~|µJ|IC= 13A, VCC= 390V<br>VGE= +15V, RG= 10Ω, L = 200µH<br>TJ= 25°C<br>~~®~~|CT3|
|Eoff<br>~~PC~~<br>~~PC~~|Turn-Off SwitchingLoss<br>~~PC~~<br>~~a~~<br>~~PC~~<br>~~—OTC“‘SEE~~|—<br><br>~~a~~<br>~~—OTC“‘SEE~~|100<br><br>~~a~~|145<br><br>~~a~~||||
|Etotal<br>~~PC~~|Total SwitchingLoss<br>~~PC~~<br>~~—OTC“‘SEE~~|—<br>~~—OTC“‘SEE~~|195|285||||
|td(on)<br>~~PC~~<br>~~PC~~|Turn-On delaytime<br>~~PC~~<br>~~—OTC“‘SEE~~<br>~~a~~<br>~~PC~~|—<br>~~—OTC“‘SEE~~<br>~~a~~<br>|20<br>~~a~~<br>|26<br>~~a~~<br>|I<br>ns|IC= 13A, VCC= 390V<br>VGE= +15V, RG= 10Ω, L = 200µH<br>TJ= 25°C<br>~~®~~<br>®|CT3|
|tr<br>~~PC~~|Rise time<br>~~PC—OTC“‘SEE~~|—<br>~~—OTC“‘SEE~~|5.0<br>~~—OTC“‘SEE~~|7.0<br>~~—OTC“‘SEE~~||||
|td(off)<br>~~PC~~<br>~~PC~~|Turn-Off delaytime<br>~~PC~~<br>~~a~~<br>~~PC~~|—<br><br>|115<br><br>|135<br><br>||||
|tf<br>~~PC~~|Fall time<br>~~PC—OTC“‘SEE~~|—<br>~~—OTC“‘SEE~~|6.0<br>~~—OTC“‘SEE~~|8.0<br>~~—OTC“‘SEE~~||||
|Eon<br>~~PC~~<br>~~PC~~|Turn-On SwitchingLoss<br>~~PC~~<br>~~a~~<br>~~PC~~|—<br><br>~~a~~<br>|165<br><br>~~a~~<br>|215<br><br>~~a~~<br>|I<br>µJ|IC= 13A, VCC= 390V<br>VGE= +15V, RG= 10Ω, L = 200µH<br>TJ= 125°C<br>®|CT3<br>11,13<br>WF1,WF2|
|Eoff<br>~~PC~~|Turn-Off SwitchingLoss<br>~~PC—OTC“‘SEE~~|—<br>~~—OTC“‘SEE~~|150<br>~~—OTC“‘SEE~~|195<br>~~—OTC“‘SEE~~||||
|Etotal<br>~~PC~~<br>~~PC~~|Total SwitchingLoss<br>~~PC~~<br>~~a~~<br>~~PC~~|—<br><br>|315<br><br>|410<br><br>||||
|td(on)<br>~~PC~~|Turn-On delaytime<br>~~PC—OTC“‘SEE~~|—<br>~~—OTC“‘SEE~~|19<br>~~—OTC“‘SEE~~|25<br>~~—OTC“‘SEE~~|I<br>ns|IC= 13A, VCC= 390V<br>VGE= +15V, RG= 10Ω, L = 200µH<br>TJ= 125°C<br>co)|CT3<br>12,14<br>WF1,WF2|
|tr<br>~~PC~~<br>~~PC~~|Rise time<br>~~PC~~<br>~~a~~<br>~~PC~~<br>~~—CC“~~|—<br><br>~~a~~|6.0<br><br>~~a~~|8.0<br><br>~~a~~||||
|td(off)<br>~~PC~~<br>~~a~~|Turn-Off delaytime<br>~~PC~~<br>~~—CC“~~<br>~~a~~|—<br>|125<br>|140<br>||||
|tf<br>~~PC~~<br>~~a~~|Fall time<br>~~PC~~<br>~~—CC“~~<br>~~a~~|—<br>|13<br>|17<br>||||
|Cies<br>~~a~~|Input Capacitance<br>~~aa~~|—<br>~~a~~|1570<br>~~a~~|—<br>~~a~~|pF|VGE= 0V<br>VCC= 30V<br>f = 1Mhz|16|
|Coes|Output Capacitance<br>~~a~~|—<br>~~a~~|130<br>~~a~~|—<br>~~a~~||||
|Cres|Reverse Transfer Capacitance<br>~~a~~|—<br>~~a~~|20<br>~~a~~|—<br>~~a~~||||
|Coeseff.|Effective Output Capacitance (Time Related)<br>~~Ce~~|—|94|—||VGE= 0V, VCE= 0V to 480V|15|
|Coeseff.(ER)|Effective Output Capacitance (Energy Related)<br>~~a~~|—<br>~~a~~|76<br>~~a~~|—<br>~~a~~||||
|RBSOA|Reverse Bias Safe Operating Area|FULL SQUARE<br>~~SO~~|||~~SO~~|TJ= 150°C, IC= 80A<br>VCC= 480V, Vp =600V<br>Rg= 22Ω, VGE= +15V to 0V<br>~~SO~~|3<br>CT2|
|trr|Diode Reverse Recovery Time<br>~~ee~~|—<br>~~ee~~|42<br>~~ee~~|60<br>~~ee~~<br>~~SO~~|ns<br>~~ee~~<br>~~SO~~|TJ= 25°C<br>IF= 12A, VR= 200V,<br>TJ= 125°C<br>di/dt = 200A/µs<br>~~ee~~<br>~~SO~~|19<br>~~ee~~|
|||—<br>~~ee~~|80<br>~~ee~~|120<br>~~ee~~<br>~~SO~~||||
|Qrr|Diode Reverse Recovery Charge<br>~~ee~~<br>~~a~~|—<br>~~ee~~<br>~~a~~|80<br>~~ee~~<br>~~a~~|180<br>~~ee~~<br>~~SO~~<br>~~a~~|nC<br>~~ee~~<br>~~SO~~<br>~~a~~|TJ= 25°C<br>IF= 12A, VR= 200V,<br>TJ= 125°C<br>di/dt = 200A/µs<br>~~ee~~<br>~~SO~~<br>~~a~~|21<br>~~ee~~<br>~~a~~|
|||—<br>~~a~~|220<br>~~a~~<br>~~PT~~|600<br>~~a~~<br>~~PT~~||||
|Irr|Peak Reverse Recovery Current<br>~~a~~|—|3.5<br>~~Pt~~|6.0<br>~~Pt~~|A|TJ= 25°C<br>IF= 12A, VR= 200V,<br>TJ= 125°C<br>di/dt = 200A/µs|19,20,21,22<br>CT5|
|||—|5.6<br>~~Pt~~|10<br>~~Pt~~||||
Notes:
RCE(on) typ. = equivalent on-resistance = VCE(on) typ. / IC, where VCE(on) typ. = 2.05V and IC = 13A. ID (FET Equivalent) is the equivalent MOSFET ID rating @ 25°C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
VCC = 80% (VCES), VGE = 15V, L = 28µH, RG = 22Ω.
Pulse width limited by max. junction temperature.
Energy losses include "tail" and diode reverse recovery. Data generated with use of Diode 8ETH06.
Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES. Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES.
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IRGP20B60PDPbF
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TOR Rectifier<br>45<br>40<br>35<br>o A<br>30<br>P N<br>25<br>C OOP<br>20<br>T OO E CE<br>C OOP ONC<br>15<br>10<br>S eeeeeNe<br>5<br>0 TELE LEN<br>0 20 40 60 80 100 120 140 160<br> TC (°C)<br>IC (A)<br>**----- End of picture text -----**<br>
**Fig. 1** - Maximum DC Collector Current vs. Case Temperature
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100<br>10<br>1<br>n l<br>0 Ft Tq ETT<br>10 100 1000<br>VCE (V)<br>IC A)<br>**----- End of picture text -----**<br>
**Fig. 3** - Reverse Bias SOA TJ = 150°C; VGE =15V
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40<br>VGE = 15V<br>35 TiAl<br>VGE = 12V<br>VGE = 10V<br>30<br>VGE = 8.0V<br>25 a VGE = 6.0V N on<br>Vine<br>20<br>ee ah<br>15<br>e y<br>10 P | Nee<br>5 | | FFYl \INT|.<br>0 [YA |<br>0 1 2 3 4 5 6<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>
**Fig. 5** - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs
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250<br>200<br>f oo<br>150 E NT<br>x<br>100 P LT NT. Fd]<br>50<br>G ENE<br>ELLLNG<br>0 FL<br>0 20 40 60 80 100 120 140 160<br> TC (°C)<br>Ptot (W)<br>**----- End of picture text -----**<br>
**Fig. 2** - Power Dissipation vs. Case Temperature
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40<br>35 VGE = 15V<br>VGE = 12V<br>30 VGE = 10V<br>VGE = 8.0V<br>25 VGE = 6.0V<br>20<br>15<br>10 a Ne<br>50 | ¥ort<br>0 1 2 3 4 5 6<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>
**Fig. 4** - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs
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40<br>35 | | VGE = 18V Ga/74<br>VGE = 15V<br>30 VGE = 12V<br>VGE = 10V<br>25 N VGE = 8.0V / a<br>a N 4m<br>20<br>| | >)<br>15<br>a<br>10 a w ANE<br>5 | | |Alfs| |<br>0 TAT<br>0 1 2 3 4 5 6<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>
**Fig. 6** - Typ. IGBT Output Characteristics TJ = 125°C; tp = 80µs
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## IRGP20B60PDPbF
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450 10<br>400 9<br>T T T_T T y.Tear<br>8<br>350<br>T = 25°C ICE = 20A<br>J 7<br>300 T = 125°C ICE = 13A<br>J<br>250 6 ICE = 8.0A<br>nas 5 e e eee<br>200 n/a i e<br>4<br>150 | f4 — es<br>3<br>| s s<br>100<br>2<br>50 1<br>> |<br>0 Ale 0 es<br>0 5 10 15 20 0 5 10 15 20<br> VGE (V) VGE (V)<br>Fig. 7 - Typ. Transfer Characteristics Fig. 8 - Typical VCE vs. VGE<br>VCE = 50V; tp = 10µs TJ = 25°C<br>10<br>100<br>9<br>8 H f} ICE = 20A SS<br>7 | : ICE = 13A HA<br>ICE = 8.0A<br>6<br>5 p ies Seen T = 150°CJ eapde<br>10 T = 125°CJ<br>4 T = 25°CJ<br>3<br>2<br>1<br>0 ee ee —a e e/a2<br>0 5 10 15 20 1<br>0.4 Sp [IeY] 0.8 1.2 1.6 Td 2.0 2.4<br> VGE (V) Forward Voltage Drop - V (V)FM<br>Fig. 9 - Typical VCE vs. VGE Fig. 10 - Typ. Diode Forward Characteristics<br>TJ = 125°C tp = 80µs<br>350 1000<br>300<br>250 a EON Sa tdOFF<br>—f 100 p p<br>200<br>eZ a<br>EOFF tdON<br>150<br>| | fA a<br>10 tF<br>100<br>tR<br>50 p e ) P BB<br>0 P| | tt 1 es<br>0 5 10 15 20 25 0 5 10 15 20 25<br> IC (A) IC (A)<br>F<br>Instantaneous Forward Current - I (A)<br>Energy (µJ)<br>Swiching Time (ns)<br>ICE (A) VCE (V)<br>VCE (V)<br>**----- End of picture text -----**<br>
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Fig. 10 - Typ. Diode Forward Characteristics<br> tp = 80µs<br>**----- End of picture text -----**<br>
**Fig. 12** - Typ. Switching Time vs. IC TJ = 125°C; L = 200µH; VCE = 390V, RG = 10Ω; VGE = 15V. Diode clamp used: 8ETH06 (See C.T.3)
**Fig. 11** - Typ. Energy Loss vs. IC
TJ = 125°C; L = 200µH; VCE = 390V, RG = 10Ω; VGE = 15V. Diode clamp used: 8ETH06 (See C.T.3)
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## IRGP20B60PDPbF
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250<br>EON<br>200<br>tee }<br>EOFF<br>pes ec en<br>150 T ELE<br>100<br>50<br>0 5 10 15 20 25 30 35<br>RG (Ω)<br>Energy (µJ)<br>**----- End of picture text -----**<br>
**Fig. 13** - Typ. Energy Loss vs. RG
TJ = 125°C; L = 200µH; VCE = 390V, ICE = 13A; VGE = 15V Diode clamp used: 8ETH06 (See C.T.3)
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18<br>16<br>14 - +++-++4-<br>12<br>10<br>8<br>6 P EAT<br>4<br>2 A aa<br>0<br>pet<br>0 100 200 300 400 500 600 700<br>VCE (V)<br>Fig. 15 - Typ. Output Capacitance<br>Stored Energy vs. VCE<br>16<br>14<br>P t i tt tt<br>400V<br>12<br>S EE EY e<br>10<br>{ ttt yt<br>8<br>p it} Yi | |<br>6 p pt [ty] | | |<br>4 P CE<br>2<br>A ttiEE [ttt]<br>0<br>0 10 20 30 40 50 60 70 80<br>Q G, Total Gate Charge (nC)<br>Eoes (µJ)<br>VGE (V)<br>**----- End of picture text -----**<br>
**Fig. 17** - Typical Gate Charge vs. VGE ICE = 13A
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1000<br>tdOFF<br>| 100<br>= | | tdON<br>10 tF<br>—a ——oee ee eee<br>tR<br>p i<br>1<br>fy |<br>0 10 20 30 40<br>RG (Ω)<br>Swiching Time (ns)<br>**----- End of picture text -----**<br>
**Fig. 14** - Typ. Switching Time vs. RG TJ = 125°C; L = 200µH; VCE = 390V, ICE = 13A; VGE = 15V Diode clamp used: 8ETH06 (See C.T.3)
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10000<br>Cies<br>1000 P SF Teee y e fee<br>; N es<br>Coes<br>100<br>S Cres See eee<br>10<br>S S<br>1<br>p t<br>0 20 40 60 80 100<br>VCE (V)<br>Fig. 16 - Typ. Capacitance vs. VCE<br> VGE= 0V; f = 1MHz<br>1.6<br>1.5<br>O e<br>1.4<br>e e<br>1.3<br>1.2<br>e sa<br>1.1<br>e A<br>1<br>a ee<br>0.9<br>ae ee<br>0.8<br>0.7<br>i<br>Z t<br>0.6<br>-50 0 50 100 150 200<br>TJ, Junction Temperature (°C)<br>Fig. 18 - Normalized Typical VCE(on) vs.<br>Junction Temperature<br> ICE = 13A, VGE = 15V<br>Normalized VCE(on) (V)<br>Capacitance (pF)<br>**----- End of picture text -----**<br>
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## IRGP20B60PDPbF
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80<br>I = 16AF<br>eTA al I = 8.0AFF<br>I = 4.0AF<br>ae |<br>60<br>Be rT<br>BRE 4020 a,<br>[= V = 200V R<br>T = 125°CJ<br>T = 25°CJ<br>0 ——<br>100 1000<br>di /dt - (A/µs)f<br>**----- End of picture text -----**<br>
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500<br>V = 200VR<br>T = 125°CJ<br>T = 25°CJ<br>400<br>I = 16AF<br>I = 8.0AF ST ?<br>I = 4.0AF<br>300<br>200<br>es<br>I<br>100<br>ge<br>0 tttee ee<br>100 1000<br>di /dt - (A/µs)f<br>**----- End of picture text -----**<br>
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20<br>V = 200VR<br>T = 125°CJ<br>oe T = 25°CJ<br>16<br>L= I = 16AF }<br>I = 8.0AF<br>I = 4.0AF<br>12 - See 1,<br>8 esZA<br>4<br>oot<br>ae<br>el<br>0<br>100 1000<br>di /dt - (A/µs)f<br>**----- End of picture text -----**<br>
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10000<br>V = 200VR<br>T = 125°CJ<br>T = 25°CJ<br>r I = 16AF eee<br>I = 8.0AF<br>I = 4.0AF<br>1000<br>|) ger<br>Bh mann<br>|<br>“a<br>100<br>100 1000<br>di /dt - (A/µs)f<br>**----- End of picture text -----**<br>
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## IRGP20B60PDPbF
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1<br>a oe lloe nni|<br>aa D = 0. 50 aa cna ee a eea ee ee<br>0.20<br>0.1 t e<br>Pai 0.100.05 AHpop τJ τJ O R1 R p 1 R2 R2 py R3 R3 R4R4 τCτ Ri (°C/W) 0.12003 0.000034 τi (sec) I<br>0.010.02 τ1τ1 τ2 τ2 τ3τ3 τ4τ4 0.05001 0.23292 0.0000340.000970<br>0.01 a 9 441 e aie e Ci= aT Ciτi/Rii/Ri TeeT T 0.17719 0.011265 II|<br>Ft SINGLE PULSE IE $Y AHH<br>( THERMAL RESPONSE ) Notes:<br>A ES SE HHH 1. Duty Factor D = t1/t2 FAH EHH<br>an Beet eee | 2. Peak Tj = P dm x Zthjc + Tc een<br>Cet Cee CATE CC<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)<br>10<br>Bf eT TT<br>D = 0.50<br>1<br>0.2 0<br>0.1 = 0.100.05 tt 1 —r [|] [<r] τJ τJ R1 R1 R2 R2 τCτ eel Ri (°C/W) 0.8667 0.000121 τi (sec)<br>—T 0.020.01 A| τ1 τ1 τ2τ2 | 1.6349 0.001726 |<br>Ci= τi/Ri<br>Ci i/Ri<br>tt A} I A} I ee<br>0.01 P e EE SINGLE PULSE<br>( THERMAL RESPONSE ) Notes:<br>i eee nti Ii FA<br>1. Duty Factor D = t1/t2<br>ee eee eG eat 2. Peak Tj = P dm x Zthjc + Tc aaal|<br>ert ee ee eel Hl<br>0.001 ee ee en |<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>
**Fig. 24.** Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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## IRGP20B60PDPbF
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L<br>L<br>VCC<br>80 V<br>DUT DUT<br>0 480V<br>1K Rg<br>**----- End of picture text -----**<br>
**Fig.C.T.1** - Gate Charge Circuit (turn-off)
**Fig.C.T.2** - RBSOA Circuit
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VCC<br>PFC diode L R = ICM<br>DUT /<br>VCC DUT<br>DRIVER VCC<br>Rg Rg<br>**----- End of picture text -----**<br>
**Fig.C.T.3** - Switching Loss Circuit
**Fig.C.T.4** - Resistive Load Circuit
## REVERSE RECOVERY CIRCUIT
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V = 200VR<br>0.01 Ω<br>L = 70µH<br>D.U.T.<br>D<br> dif/dt<br>ADJUST G IRFP250<br>S<br>**----- End of picture text -----**<br>
**Fig. C.T.5** - Reverse Recovery Parameter Test Circuit
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## IRGP20B60PDPbF
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450 18<br>400 16<br>tf<br>350 14<br>300 12<br>250 90% I CE 10<br>200 8<br>5% V CE<br>150 6<br>100 4<br>50 / 5% ICE 2<br>!<br>0 0<br>4a ! , rN a !<br>Eoff Loss<br>-50 -2<br>-0.20 0.00 0.20 0.40 0.60 0.80<br>Time(µs)<br> (V) (A)<br>VCE ICE<br>**----- End of picture text -----**<br>
**Fig. WF1** - Typ. Turn-off Loss Waveform @ TJ = 125°C using Fig. CT.3
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450 45<br>400 40<br>TEST CURRENT<br>350 35<br>300 30<br>tr > I.<br>250 25<br>90% test current<br>200 20<br>10% test current<br>150 15<br>100 10<br>50 /| 5% V CE 5<br>0 0<br>— 1i ii Eon Loss —_, —— [|]<br>-50 ine -5<br>7.75 7.85 7.95 8.05 8.15<br>Time (µs)<br> (V) (A)<br>VCE ICE<br>**----- End of picture text -----**<br>
**Fig. WF2** - Typ. Turn-on Loss Waveform @ TJ = 125°C using Fig. CT.3
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3<br>trr<br>IF<br>ta tb<br>0<br>: co<br>iG 4<br>4<br>::o Q rr<br>:: :: O 2 I RRM // 0.5 I RRM<br>H t td<br>: : ¢ di(rec)M/dt 5<br>0.75 IRRM<br>—_ _<br>1 di /dtf<br>**----- End of picture text -----**<br>
**Fig. WF3** - Reverse Recovery Waveform and Definitions
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## IRGP20B60PDPbF
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EXAMPLE: THIS IS AN IRFPE30<br>WITH ASSEMBLY PART NUMBER<br>LOT CODE 5657 INTERNATIONAL yen<br>ASSEMBLED ON WW 35, 2000 RECTIFIER IRFPE30<br>IN THE ASSEMBLY LINE "H" Note: "P" in assembly line LOGO . IgR 56 57 035H DATE CODE<br>position indicates "Lead-Free" ASSEMBLY YEAR 0 = 2000<br>LOT CODE WEEK 35<br>LINE H<br>**----- End of picture text -----**<br>
## **TO-247AC package is not recommended for Surface Mount Application.**
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site.
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/04
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/
Updated at February 9, 2023
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