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IRGIB15B60KD1P
IGBT, 19 A, 2.2 V, 52 W, 600 V, TO-220FP, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Power Dissipation: 52W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220FP
- Operating Temperature Max: 175°C
- Continuous Collector Current: 19A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 2.2V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.31 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
PD- 94914 ## IRGIB15B60KD1P ## INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE **==> picture [197 x 96] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>VCES = 600V<br>IC = 12A, TC=100°C<br>G<br>tsc > 10µs, TJ=150°C<br>E<br>n-channel VCE(on) typ. = 1.80V<br>**----- End of picture text -----**<br> ## **Features** - Low VCE (on) Non Punch Through IGBT Technology. - Low Diode VF. - 10µs Short Circuit Capability. - Square RBSOA. - Ultrasoft Diode Reverse Recovery Characteristics. - Positive VCE (on) Temperature Coefficient. - Maximum Junction Temperature Rated at 175°C - Lead-Free ## **Benefits** - Benchmark Efficiency for Motor Control. - Rugged Transient Performance. - Low EMI. - Excellent Current Sharing in Parallel Operation. ## TO-220 **Absolute Maximum Ratings** Full-Pak |~~CO~~|**Parameter**<br>~~CO~~|**Max.**<br>~~CO~~|**Units**<br>~~CO~~| |---|---|---|---| |VCES<br>~~CO~~<br>~~a~~|Collector-to-Emitter Voltage<br>~~CO~~<br>~~a~~|600<br>~~CO~~<br>~~a~~|V<br>~~CO~~<br>~~a~~| |IC@ TC= 25°C<br>~~=~~|Continuous Collector Current<br>~~=~~|19<br>~~=~~|A<br>~~=~~| |IC@ TC= 100°C<br>~~=~~<br>~~Ca~~|Continuous Collector Current<br>~~=~~<br>~~Ca~~|12<br>~~=~~<br>~~Ca~~|| |ICM<br>~~=~~<br>~~ees~~|Pulse Collector Current(Ref.Fig.C.T.5)<br>~~=~~<br>~~ees~~|38<br>~~=~~<br>~~ees~~|| |ILM<br>~~=~~<br>~~ees~~<br>~~nT~~|Clamped Inductive Load current<br>~~=~~<br>~~ees~~<br>~~nT~~|38<br>~~=~~<br>~~ees~~<br>~~nT~~|| |IF@ TC= 25°C<br>~~=~~<br>~~ees~~|Diode Continuous Forward Current<br>~~=~~<br>~~ees~~|19<br>~~=~~<br>~~ees~~|| |IF@ TC= 100°C<br>~~=~~<br>~~ees~~<br>~~Ca~~|Diode Continuous Forward Current<br>~~=~~<br>~~ees~~<br>~~Ca~~|12<br>~~=~~<br>~~ees~~<br>~~Ca~~|| |IFM<br>~~=~~|Diode Maximum Forward Current<br>~~=~~|38<br>~~=~~|| |VISOL<br>~~=~~<br>~~Ca~~|RMS Isolation Voltage,Terminal to Case,t = 1 min<br>~~=~~<br>~~Ca~~|2500<br>~~=~~<br>~~Ca~~|V<br>~~=~~| |VGE<br>~~—ss~~|Gate-to-Emitter Voltage<br>~~ss~~|±20|| |PD@ TC= 25°C<br>~~—ss~~|Maximum Power Dissipation<br>~~ss~~|52|W| |PD@ TC= 100°C <br>~~ss~~<br>~~ees~~|Maximum Power Dissipation<br>~~ss~~<br>~~ees~~|26<br>~~ees~~|| |TJ<br>TSTG<br>~~ss~~<br>~~ees~~<br>~~eee~~|Operating Junction and<br>Storage Temperature Range<br>~~ss~~<br>~~ees~~<br>~~eee~~|-55 to +175<br>~~ees~~<br>~~eee~~|°C<br>~~eee~~| |~~eee~~<br>~~Ca~~|SolderingTemperature for 10 sec.<br>~~eee~~<br>~~Ca~~|300(0.063 in.(1.6mm)from case)<br>~~eee~~<br>~~Ca~~|| |~~CO~~|MountingTorque,6-32 or M3 Screw<br>~~CO~~|10 lbf.in(1.1N.m)<br>~~CO~~|~~CO~~| ## **Thermal / Mechanical Characteristics** ||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units**| |---|---|---|---|---|---| |RθJC|Junction-to-Case- IGBT|–––|–––|2.9|°C/W| |RθJC|Junction-to-Case- Diode|–––|–––|4.6|| |RθCS|Case-to-Sink,flat, greased surface|–––|0.50|–––|| |RθJA|Junction-to-Ambient,typical socket mount|–––|–––|62|| |Wt|Weight|–––|2.0|–––|g| www.irf.com 1 12/30/03 ## IRGIB15B60KD1P **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** **==> picture [458 x 547] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---| |Parameter|Min.|Typ.|Max.|Units Conditions|Ref.Fig.| |Rs|QO|GO|GOD|GO|GO| |CG|V(BR)CES|Collector-to-Emitter Breakdown Voltage|600|—|—|V|VGE = 0V, IC = 500µA| |∆V(BR)CES/∆TJ|Temperature Coeff. of Breakdown Voltage|—|0.32|—|V/°C|VGE = 0V, IC = 1mA (25°C-150°C)| |ee|GO|GOGO| |a|—|1.80|2.20|IC = 15A, VGE = 15V, TJ = 25°C|5,6,7| |VCE(on)|Collector-to-Emitter Voltage|a|—|2.05|ee|2.50|V|IC = 15A, VGE = 15V, TJ = 150°C|9,10,11| |—|2.10|2.60|IC = 15A, VGE = 15V, TJ = 175°C| |VGE(th)|Gate Threshold Voltage|3.5|4.5|5.5|V|VCE = VGE, IC = 250µA|9,10,11| |∆VGE(th)/∆TJ|Threshold Voltage temp. coefficient|—|-10|—|mV/°C VCE = VGE, IC = 1mA (25°C-150°C)|12| |Cees|gfe|Forward Transconductance|GOa|—|GO|10|eeGO|—|GD|S|GOPo|VCE = 50V, IC = 15A, PW = 80µs| |es|ee|GO|QO| |—|1.0|150|VGE = 0V, VCE = 600V| ||||||ee| |ICES|Zero Gate Voltage Collector Current|a|—|163|500|µA|VGE = 0V, VCE = 600V, TJ = 150°C| |a|—|829|1800|VGE = 0V, VCE = 600V, TJ = 175°C| |VFM|Diode Forward Voltage Drop|||—|1.69|2.30|V|IF = 15A, VGE = 0V|8| |||—|||1.31|||1.75|P|IF = 15A, VGE = 0V, T|rC|J = 150°C| |—|1.25|1.65|IF = 15A, VGE = 0V, TJ = 175°C| |ee|IGES|Gate-to-Emitter Leakage Current|GOa|—|—|±100|GO|nA|VGE = ±20V, VCE = 0V| |Switching Characteristics @ TJ = 25°C (unless otherwise specified)| |es|ee|Parameter|Q|Min.|Typ.|Max.|Units|O|Conditions|Ref.Fig.| |ee|Qg|Total Gate Charge (turn-on)|—|56|84|IC = 15A|23| |Qge|Gate-to-Emitter Charge (turn-on)|—|7.0|10|nC|VCC = 400V|CT1| |esa| |Qgc|Gate-to-Collector Charge (turn-on)|—|26|39|VGE = 15V| |ee| |Eon|Turn-On Switching Loss|—|127|140|IC = 15A, VCC = 400V|CT4| |ee| |Eoff|Turn-Off Switching Loss|—|334|422|µJ|VGE = 15V, RG = 22Ω, L = 1.07mH| |a| |Etot|Total Switching Loss|—|461|556|Ls= 150nH, TJ = 25°C| |Rs|®| |td(on)|Turn-On delay time|—|30|39|IC = 15A, VCC = 400V| |ee| |tr|Rise time|—|25|35|ns|VGE = 15V, RG = 22Ω, L = 1.07mH|CT4| |ee| |td(off)|Turn-Off delay time|—|173|188|Ls= 150nH, TJ = 25°C| |a| |tf|Fall time|—|41|53| |Rs| |Eon|Turn-On Switching Loss|—|258|282|IC = 15A, VCC = 400V|CT4| |ee| |Eoff|Turn-Off Switching Loss|—|570|646|µJ|VGE = 15V, RG = 22Ω, L = 1.07mH|13,15| |es| |a|Etot|Total Switching Loss|—|829|915|Ls= 150nH, TJ = 150°C|@|WF1,WF2| |td(on)|Turn-On delay time|—|30|39|IC = 15A, VCC = 400V|14,16| |ee| |tr|Rise time|—|25|35|ns|VGE = 15V, RG = 22Ω, L = 1.07mH|CT4| |ee| |td(off)|Turn-Off delay time|—|194|207|Ls= 150nH, TJ = 150°C|WF1| |a| |tf|Fall time|—|56|73|WF2| |es| |LE|Internal Emitter Inductance|—|7.5|—|nH|Measured 5 mm from package| |ee|GO|GD|GO| |Cies|Input Capacitance|—|850|1275|VGE = 0V| |ee| |Coes|Output Capacitance|—|100|150|pF|VCC = 30V|22| |a| |Cres|Reverse Transfer Capacitance|—|32|48|f = 1.0MHz| |RBSOA|Reverse Bias Safe Operating Area|FULL SQUARE|TJ = 150°C, IC = 38A, Vp = 600V|4| |VCC=500V,VGE = +15V to 0V,RG = 22Ω|CT2| |ee|SCSOA|Short Circuit Safe Operating Area|ee|10|ee|—|—|ee|µs|TJ = 150°C, Vp = 600V, RG = 22Ω|CT3| |VCC=360V,VGE = +15V to 0V|WF4| |ISC (PEAK)|Peak Short Circuit Collector Current|—|140|—|A|WF4| |CT|ef| |Erec|Reverse Recovery Energy of the Diode|—|267|347|µJ|TJ = 150°C|17,18,19| |RsGO| |trr|Diode Reverse Recovery Time|—|67|87|ns|VCC = 400V, IF = 15A, L = 1.07mH|20,21| |RsGO| |Irr|Peak Reverse Recovery Current|—|23|30|A|VGE = 15V, RG = 22Ω|CT4,WF3| |eeee| |Qrr|Diode Reverse Recovery Charge|—|984|1279|nC|di/dt = 875A/µs| |ee| |(0)|Vcc =80% (VCES), VGE = 15V, L =100µH, RG = 22Ω.|®@|Energy losses include "tail" and diode reverse recovery.| **----- End of picture text -----**<br> Energy losses include "tail" and diode reverse recovery. www.irf.com 2 ## IRGIB15B60KD1P **==> picture [438 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> 20 55<br>50<br>on e MT T TTI<br>16 | NY 45 i<br>N 40 PT OINE EELS<br>35<br>12 \ PRE<br>30<br>x PPPPSX ELL<br>25<br>8<br>COPOPN TT} 20 GEREN<br>NS PONE<br>15<br>4 \ 10 NT<br>CCOOOONE) = EERE REE<br>5<br>0 \ 0 PPE rreeee Ni<br>0 POOCTEE) 20 40 60 80 100 120 140 160 180 = 0 EREEEF 20 40 60 80 100 120 ERS 140 160 180<br> TC (°C) TC (°C)<br>IC (A)<br>Ptot (W)<br>**----- End of picture text -----**<br> **Fig. 1** - Maximum DC Collector Current vs. Case Temperature **Fig. 2** - Power Dissipation vs. Case Temperature **==> picture [205 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>UU JAMIE I HH<br>10 µs<br>10 CALaiTIINNSQTIISS.TEAIIEui an a LEH<br>ANTE<br>A a Sa<br>CATALIN SCHR 100 µs ILI<br>1 EU UI TSE LTH<br>|FFA ANWIE 1ms Ael<br>DC<br>0.1 LV CHINE LPN LET<br>1 10 100 1000 10000<br> VCE (V)<br>IC (A)<br>**----- End of picture text -----**<br> **==> picture [215 x 197] intentionally omitted <==** **----- Start of picture text -----**<br> 100 es ee ee ee ee eee<br>EEE EEE<br>10<br>[||<br>eee eet<br>ee es eei<br>EAE<br>1<br>10 100 1000<br>VCE (V)<br>IC A)<br>**----- End of picture text -----**<br> **Fig. 3** - Forward SOA TC = 25°C; TJ ≤ 150°C **Fig. 4** - Reverse Bias SOA TJ = 150°C; VGE =15V www.irf.com 3 ## IRGIB15B60KD1P **==> picture [197 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>18 ee |<br>16<br>14 VGE = 18V<br>VGE = 15V<br>12 VGE = 12V<br>VGE = 10V<br>10 RS<br>8 n/a VGE = 8.0V<br>a<br>6 Se<br>4 f o<br>2 a a<br>><br>0<br>0 2 4 6<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br> **Fig. 5** - Typ. IGBT Output Characteristics TJ = -40°C; tp = 60µs **==> picture [197 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>___<br>18<br>16<br>14 oFS~n.~...] VGE = 18V<br>VGE = 15V<br>12 VGE = 12V<br>—_f- VGE = 10V<br>10<br>VGE = 8.0V<br>8 ff<br>6<br>p f<br>4<br>2 A<br>A<br>0<br>0 2 4 6<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br> **Fig. 7** - Typ. IGBT Output Characteristics TJ = 150°C; tp = 60µs **==> picture [197 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>18 Md<br>16<br>14 VGE = 18V<br>VGE = 15V<br>12 VGE = 12V<br>VGE = 10V<br>10 ae =<br>ee VGE = 8.0V<br>8<br>/i<br>6 s e ee<br>4 a ee eee<br>Ae<br>2<br>0 > eeee<br>0 2 4 6<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br> **Fig. 6** - Typ. IGBT Output Characteristics TJ = 25°C; tp = 60µs **==> picture [201 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> 70<br>-40°C<br>60 25°C<br>150°C<br>50 HP a H<br>40<br>ae) se<br>30<br>ieee, ae<br>20<br>P| | Sf |<br>10<br>Lf<br>0 | Ley | |<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br> VF (V)<br>IF (A)<br>**----- End of picture text -----**<br> **Fig. 8** - Typ. Diode Forward Characteristics tp = 60µs www.irf.com 4 ## IRGIB15B60KD1P **==> picture [199 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>18 PTT<br>16 Pott<br>14 | ee<br>ite<br>12 ICE = 7.5A<br>10 | it | CE ICE = 15A<br>8 Wes ICE = 30A<br>6 He<br>| ce<br>4<br>20 ee ee<br>5 10 15 20<br> VGE (V)<br>VCE (V)<br>**----- End of picture text -----**<br> **Fig. 9** - Typical VCE vs. VGE TJ = -40°C **==> picture [198 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>18<br>1<br>16 Pf<br>14<br>12 ICE = 7.5A<br>aime<br>10 ICE = 15A<br>Ripe ICE = 30A<br>8 Ae=<br>6 P A<br>4<br>2 cee<br>0 ee<br>5 10 15 20<br> VGE (V)<br>VCE (V)<br>**----- End of picture text -----**<br> **Fig. 11** - Typical VCE vs. VGE TJ = 150°C **==> picture [199 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>18 Pett<br>16 Pett,<br>14 |<br>12 mine ICE = 7.5A<br>10 miti~a ICE = 15A<br>ICE = 30A<br>8 Whe<br>6 =<br>4 6a oa<br>2<br>0 es ee<br>5 10 15 20<br> VGE (V)<br>VCE (V)<br>**----- End of picture text -----**<br> **Fig. 10** - Typical VCE vs. VGE TJ = 25°C **==> picture [209 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> 70<br>60 TJ = 25°C ——<br>50 TJ = 150°C YY<br>40 ee ae<br>30 a a<br>20 a ae<br>TJ = 150°C<br>10<br>ey T ee J = 25°C<br>0 4a<br>0 5 10 15<br> VGE (V)<br>ICE (A)<br>**----- End of picture text -----**<br> **Fig. 12** - Typ. Transfer Characteristics VCE = 50V; tp = 10µs www.irf.com 5 ## IRGIB15B60KD1P **==> picture [437 x 197] intentionally omitted <==** **----- Start of picture text -----**<br> 14001200 P f fo ff dd 1000 Fe Tsdf]ffdffdfsfidffésf<br>tdOFF<br>1000 e e<br>EOFF 100<br>800 pp A EON P tF e<br>600 tdON<br>tR<br>|| | Pe l a a<br>10<br>400<br>pee aeeeeeeee<br>200<br>0<br>1<br>0 5 10 15 20 25 30<br>pre 0 EP 5 [EE] 10 15 20 25 30<br> IC (A)<br>IC (A)<br>Energy (µJ)<br>Swiching Time (ns)<br>**----- End of picture text -----**<br> **Fig. 13** - Typ. Energy Loss vs. IC TJ = 150°C; L=1.07mH; VCE= 400V RG= 22Ω; VGE= 15V **Fig. 14** - Typ. Switching Time vs. IC TJ = 150°C; L=1.07mH; VCE= 400V RG= 22Ω; VGE= 15V **==> picture [437 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> 1200 10000<br>1000 EOFF<br>j t pt pp<br>800 EON 1000<br>A<br>600 tdOFF<br>400 Se 100 f a<br>tF<br>200 F OS) tdON Kee<br>tR<br>0 | | ft 10 E an<br>0 50 100 150 200 0 50 100 150 200<br>RG (Ω) RG (Ω)<br>Swiching Time (ns)<br>Energy (µJ)<br>**----- End of picture text -----**<br> **Fig. 15** - Typ. Energy Loss vs. RG TJ = 150°C; L=1.07mH; VCE= 400V ICE= 15A; VGE= 15V **Fig. 16** - Typ. Switching Time vs. RG TJ = 150°C; L=1.07mH; VCE= 400V ICE= 15A; VGE= 15V www.irf.com 6 ## IRGIB15B60KD1P **==> picture [436 x 198] intentionally omitted <==** **----- Start of picture text -----**<br> 25 24<br>RG = 22 Ω 20<br>20 |b ey ] LLL<br>RG = 47 Ω 16<br>15 P fr ULE CALNN I<br>RG = 100 Ω 12<br>10<br>RG = 200 Ω 8<br>5 a 4 P | | ||<br>Titty} E|E|<br>0 0<br>0 5 10 15 20 25 30 0 40 80 120 160 200<br>IF (A) RG (Ω)<br>IRR (A) IRR (A)<br>**----- End of picture text -----**<br> **Fig. 17** - Typical Diode IRR vs. IF TJ = 150°C **Fig. 18** - Typical Diode IRR vs. RG TJ = 150°C; IF = 15A **==> picture [215 x 197] intentionally omitted <==** **----- Start of picture text -----**<br> 24<br>20<br>Pt<br>16<br>GEREDZAnEe<br>12 BER Ananee<br>8 BEVARREREE<br>4 BERR REREEE<br>0<br>TY EET TT TE<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRR (A)<br>**----- End of picture text -----**<br> **==> picture [210 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> 1500<br>30A<br>1000<br>15A<br>7.5A<br>22Ω<br>500 47Ω<br>100 Ω<br> 200Ω<br>0<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br> **Fig. 19** - Typical Diode IRR vs. diF/dt VCC= 400V; VGE= 15V; ICE= 15A; TJ = 150°C **Fig. 20** - Typical Diode QRR VCC= 400V; VGE= 15V;TJ = 150°C www.irf.com 7 ## IRGIB15B60KD1P **==> picture [438 x 479] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>160<br>TIT<br>120<br>ae72e<br>200 Ω<br>100 Ω<br>80 b ul<br> 47 Ω<br> 22 Ω<br>E ee<br>40<br>0 5 10 15 20 25<br>IF (A)<br>Fig. 21 - Typical Diode ERR vs. IF<br>TJ = 150°C<br>10000 16<br>14<br>TTT] F E 300V E<br>12 400V<br>Cies<br>1000<br>Vi t i 10<br>ty} p f<br>8<br>6<br>100 Coes<br>ANNea e e| 4 eo7-<br>Cres 2<br>ee e ) 0 Fe<br>10<br>0 20 40 60 80<br>0 20 40 60 80 100<br>Q G, Total Gate Charge (nC)<br>VCE (V)<br>VGE (V)<br>Capacitance (pF)<br>Energy (µJ)<br>**----- End of picture text -----**<br> **Fig. 22** - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz **Fig. 23** - Typical Gate Charge vs. VGE ICE = 15A; L = 2500µH www.irf.com 8 ## IRGIB15B60KD1P **==> picture [440 x 486] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1 D = 0.50 0 a a 8 a e m<br>= 0.20 |<br>0.10 h h e e | | Ty<br>Sre e mani met em |<br>0.1 ca P 0.0.020.01 0 5 arrmeeTr P I τJ τJτ1τ1 R1 R1 τ2 τR22 R2 Rτ33Rτ “I 33 τCτ Ri (°C/W) 0.437 0.0005421.087 0.127526 PCH τi (sec) LAH|1<br>0.01 A Ci= Ciτi/τRii/Ri -— 1.376 2.702 |<br>e g en | et Notes: FEAT<br>P A SINGLE PULSE 1. Duty Factor D = t1/t2 |<br>( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc<br>may I PS Hil<br>ae FPA Ay<br>0.001 PAT | E E |<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)<br>10<br>F HTHT<br>He TT T ee cee ee eh ame TTTT TT T T TTT<br>D = 0.50<br>siiiiosamom ntti amma Ee |<br>1 0.20 ee<br>R e 0. 1 0 eee nse oat —aeannitlelt OeT | | ||<br>P 0.05 e R1 R1 R2 R2 R3 R3 R4R4 Ri (°C/W) eee ee τi (sec)<br>0.1 Mee — 0.020.01 inATcritieeeay | N|| τJ P τ 6 Jτ1τ | 1 | τ2τ2 | τ3τ3 τ4τ4 6 τCτ ee 0.8631 0.0002020.6432 0.0010531.1937 0.055415<br>Ci= τi/Ri 1.9013 2.335<br>0.01 Pi AN i Ci i/Ri<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br> thJC )<br>Thermal Response ( Z<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br> **Fig 25.** Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 9 ## IRGIB15B60KD1P **==> picture [408 x 86] intentionally omitted <==** **----- Start of picture text -----**<br> L<br>L<br>DUT VCC 80 V + DUT<br>0 - 480V<br>1K Rg<br>**----- End of picture text -----**<br> **Fig.C.T.1** - Gate Charge Circuit (turn-off) **Fig.C.T.2** - RBSOA Circuit **==> picture [314 x 273] intentionally omitted <==** **----- Start of picture text -----**<br> diode clamp /<br>DUT<br>Driver L<br>- 5V<br>DC 360V<br>DUT /<br>DRIVER VCC<br>DUT Rg<br>\VJ<br>Fig.C.T.4 - Switching Loss Circuit<br>VCC<br>R =<br>ICM<br>DUT VCC<br>Rg<br>. |YT<br>**----- End of picture text -----**<br> **Fig.C.T.3** - S.C.SOA Circuit **Fig.C.T.5** - Resistive Load Circuit www.irf.com 10 ## IRGIB15B60KD1P **==> picture [211 x 512] intentionally omitted <==** **----- Start of picture text -----**<br> 600 30<br>500 ee 25<br>tf<br>400 20<br>90% ICE<br>300 15<br>200 10<br>5% VCE<br>100 5% I CE 5<br>0 0<br>Eoff Loss<br>-100 -5<br>0.1 0.3 0.5 0.7<br>time(µs)<br>Fig. WF1- Typ. Turn-off Loss Waveform<br>@ TJ = 150°C using Fig. CT.4<br>100 20<br>0 i 15<br>QRR<br>-100 10<br>tRR<br>-200 5<br>-300 Ve 0<br>-400 -5<br>Peak<br>-500 -10<br>IRR<br>10%<br>-600 -15<br>Peak<br>-700 IRR -20<br>-800 ho -25<br>-900 fF -30<br>0.10 0.20 0.30 0.40 0.50<br>time (µS)<br> (V) (A)<br>VCE ICE<br> (V)VF (A)IF<br>**----- End of picture text -----**<br> Fig. WF3- Typ. Diode Recovery Waveform @ TJ = 150°C using Fig. CT.4 **==> picture [208 x 236] intentionally omitted <==** **----- Start of picture text -----**<br> 800 40<br>700 35<br>OC<br>TEST CURRENT<br>600 30<br>tr<br>500 25<br>90% test current<br>400 20<br>300 15<br>200 10<br>10% test current<br>100 5% V CE 5<br>0 0<br>Eon Loss<br>-100 -5<br>0.2 0.4 0.6<br>time (µs)<br> (V) (A)<br>VCE ICE<br>**----- End of picture text -----**<br> Fig. WF2- Typ. Turn-on Loss Waveform @ TJ = 150°C using Fig. CT.4 **==> picture [204 x 261] intentionally omitted <==** **----- Start of picture text -----**<br> 450 400<br>400 | 350<br>350300 oe 300250<br>ee oe<br>250 200<br>200 150<br>150 100<br>100 50<br>50 0<br>0 -50<br>ee<br>0 10 20 30 40 50<br>Time (uS)<br>Fig. WF4- Typ. S.C Waveform<br>@ TC = 150°C using Fig. CT.3<br> (V) (A)<br>VCE I CE<br>**----- End of picture text -----**<br> www.irf.com 11 ## IRGIB15B60KD1P ## TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) ## TO-220 Full-Pak Part Marking Information **==> picture [300 x 58] intentionally omitted <==** **----- Start of picture text -----**<br> E XAMP L E : T H IS IS AN IR F I840G<br>WIT H AS S E MB L Y P AR T N U M B E R<br>L OT COD E 3432 IN T E R N AT ION AL<br>AS S E MB L E D ON WW 24 1999 R E CT IF IE R IR F I840G<br>IN T H E AS S E MB L Y L IN E "K " L OGO 9 24K<br>Note: position indicates "Lead-Free" "P" in assembly line AS S E M B L Y 34 32 D AT E COD EY E AR 9 = 1999<br>L OT COD E W E E K 24<br>L IN E K<br>**----- End of picture text -----**<br> ## **TO-220 FullPak packages are not recommended for Surface Mount Application.** Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. **IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 12/03 www.irf.com 12 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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