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IRGB4615DPBF
IGBT, 23 A, 1.55 V, 99 W, 600 V, TO-220AB, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Power Dissipation: 99W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220AB
- Operating Temperature Max: 175°C
- Continuous Collector Current: 23A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.55V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.178 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
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C<br>VcES =600V Cc C gil<br>=<br>Ic 15A, Te = 100°C @<br>E<br>G C<br>tse > 5us, Timax = 175°C G G<br>E<br>=<br>typ. 1.55V@ 8A D [2] -Pak TO-220AB<br>n-channel<br>IRGS4615DPbF IRGB4615DPbF<br>G C E<br>Gate Collector Emitter<br>**----- End of picture text -----**<br>
## Applications
- Appliance Drives
- Inverters
- UPS
|**Features**<br>**Benefits**<br>→|**Features**<br>**Benefits**<br>→|
|---|---|
|Low VCE(ON)and switchinglosses|Highefficiencyinawiderange ofapplications and switchingfrequencies|
|Square RBSOA and maximum junction temperature 175°C|Improved reliability due to rugged hard switching performance and higher<br>powercapability|
|Positive VCE(ON)temperature coefficient and tighter distribution of<br>parameters|Excellent current sharing in parallel operation|
|5μs short circuit SOA|Enables short circuit protectionscheme|
|Lead-free,RoHS compliant|Environmentallyfriendly|
|**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRGS4615DPbF|D2PAK|Tube|50|IRGS4615DPbF|
|IRGS4615DTRRPbF||Tape and Reel Right|800|IRGS4615DTRRPbF|
|IRGS4615DTRLPbF||Tape and Reel Left|800|IRGS4615DTRLPbF|
|IRGB4615DPbF|TO-220AB|Tube|50|IRGB4615DPbF|
## **Absolute Maximum Ratings**
|**Absolute Maximum Ratings**<br>~~es~~|**Absolute Maximum Ratings**|||
|---|---|---|---|
|~~es~~|**Parameter**|**Max.**|**Units**|
|VCES<br>~~es~~<br>~~eG~~<br>~~a~~|Collector-to-Emitter Breakdown Voltage<br>~~eG~~|600<br>~~eG~~|V<br>~~eG~~|
|IC@ TC= 25°C<br>~~a~~|Continuous Collector Current|23|A|
|IC@ TC= 100°C<br>~~a~~<br>~~a~~|Continuous Collector Current<br>|15<br>||
|ICM<br>~~eC~~|Pulsed Collector Current,VGE= 15V<br>~~eC~~|24<br>~~eC~~||
|ILM<br>~~©~~|Clamped Inductive Load Current,VGE= 20V<br>~~©~~|32<br>~~©~~||
|IF@TC=25°C<br>~~Ge~~<br>~~ee~~|Diode Continuous Forward Current<br>~~Ge~~|14<br>~~Ge~~||
|IF@TC=100°C<br>~~ee~~<br>~~re~~|Diode Continuous Forward Current<br>~~>~~|9||
|IFM<br>~~ee~~<br>~~re~~|Diode Maximum Forward Current<br>~~>~~|32||
|VGE<br>~~re~~|Continuous Gate-to-Emitter Voltage<br>~~>~~<br>~~RG~~|± 20<br>~~RG~~|V|
||Transient Gate-to-Emitter Voltage<br>~~RO~~|±30<br>~~RO~~||
|PD@ TC=25°<br>~~Ge~~|Emitter Voltage<br>Maximum Power Dissipation<br>~~Ge~~|99<br>~~Ge~~|W|
|PD@ TC=100°<br>~~I~~<br>~~ff~~|Maximum Power Dissipation<br>~~I~~<br>~~ff~~|50||
|TJ<br>TSTG<br>~~I~~<br>~~ff~~|Operating Junction and<br>Storage Temperature Range<br>~~I~~<br>~~ff~~|-40 to + 175|°C|
|~~ff~~|Soldering Temperature, for 10 seconds (1.6mm from case)<br>~~ff~~|300||
|~~ff~~<br>~~a~~|Mounting Torque, 6-32 or M3 Screw TO-220<br>~~ff~~|10lbf. In(1.1 N.m)||
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## **Thermal Resistance**
||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|---|
|RθJC|Thermal Resistance, Junction-to-Case -(each IGBT) �|–––|–––|1.51|°C/W|
|RθJC|Thermal Resistance, Junction-to-Case -(each Diode) �|–––|–––|3.66||
|RθCS|Thermal Resistance,Case-to-Sink(flat, greased surface)|–––|0.5|–––||
|RθJA|Thermal Resistance, Junction-to-Ambient (PCB mount D2PAK)�|–––|–––|40||
||<br>Thermal Resistance,Junction-to-Ambient(Socket mount: TO-220)|–––|–––|62||
## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**
||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units **|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)CES|Collector-to-Emitter Breakdown Voltage|600|—|—|V|VGE= 0V,Ic=100μA�|
|ΔV(BR)CES/ΔTJ|Temperature Coeff. of Breakdown Voltage|—|0.3|—|V/°C|VGE=0V,Ic= 250μA(25-175<br>oC )|
|VCE(on)|Collector-to-Emitter Saturation Voltage|—|1.55|1.85|V|IC= 8.0A,VGE= 15V,TJ= 25°C|
|||—|1.95|—||IC= 8.0A,VGE= 15V,TJ= 150°C|
|||—|2.00|—||IC= 8.0A,VGE= 15V,TJ= 175°C|
|VGE(th)|Gate Threshold Voltage|4.0|—|6.5|V|VCE= VGE,IC= 250μA|
|ΔVGE(th)/ΔTJ|Threshold Voltage temp. coefficient|—|-18|—|mV/°C|VCE= VGE,IC= 250μA(25-175<br>oC )|
|gfe|Forward Transconductance|—|5.6|—|S|VCE= 50V,IC= 8.0A,PW =80μs|
|ICES|Collector-to-Emitter Leakage Current|—|—|25|μA|VGE= 0V,VCE= 600V|
|||—|400|—||VGE= 0V,VCE= 600V,TJ=175°C|
|VFM|Diode Forward Voltage Drop|—|1.80|2.8|V|IF= 8.0A|
|||—|1.30|—||IF= 8.0A,TJ= 175°C|
|IGES|Gate-to-Emitter Leakage Current|—|—|±100|nA|VGE= ± 20 V|
## **Switching Characteristics @ TJ = 25°C (unless otherwise specified)**
||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|Qg|Total Gate Charge(turn-on)|—|19|—|nC|IC= 8.0A<br>VCC= 400V<br>VGE= 15V|
|Qge|Gate-to-Emitter Charge(turn-on)|—|5|—|||
|Qgc|Gate-to-Collector Charge(turn-on)|—|8|—|||
|Eon|Turn-On SwitchingLoss|—|70|—|μJ|IC= 8.0A, VCC= 400V, VGE= 15V<br>RG= 47Ω, L=1mH, LS= 150nH, TJ= 25°C<br>Energylosses include tail and diode reverse recovery �|
|Eoff|Turn-Off SwitchingLoss|—|145|—|||
|Etotal|Total SwitchingLoss|—|215|—|||
|td(on)|Turn-On delaytime|—|30|—|<br>ns|IC= 8.0A, VCC= 400V<br>RG= 47Ω, L=1mH, LS= 150nH<br>TJ= 25°C|
|tr|Rise time|—|15|—|||
|td(off)|Turn-Off delaytime|—|95|—|||
|tf|Fall time|—|20|—|||
|Eon|Turn-On SwitchingLoss|—|165|—|<br>μJ|IC= 8.0A, VCC= 400V, VGE= 15V<br>RG= 47Ω, L=1mH, LS= 150nH, TJ= 175°C<br>Energylosses include tail and diode reverse recovery �|
|Eoff|Turn-Off SwitchingLoss|—|240|—|||
|Etotal|Total SwitchingLoss|—|405|—|||
|td(on)|Turn-On delaytime|—|28|—|<br>ns|IC= 8.0A, VCC= 400V<br>RG= 47Ω, L=1mH, LS= 150nH<br>TJ= 175°C|
|tr|Rise time|—|17|—|||
|td(off)|Turn-Off delaytime|—|117|—|||
|tf|Fall time|—|35|—|||
|Cies|Input Capacitance|—|535|—|pF|VGE= 0V<br>VCC= 30V<br>f = 1Mhz|
|Coes|Output Capacitance|—|45|—|||
|Cres|Reverse Transfer Capacitance|—|15|—|||
|RBSOA|Reverse Bias Safe Operating Area|FULL SQUARE||||TJ= 175°C, IC= 32A<br>VCC= 480V, Vp =600V<br>RG= 47Ω,VGE= +20V to 0V|
|SCSOA|Short Circuit Safe Operating Area|5|—|—|μs|VCC= 400V, Vp =600V<br>RG= 47Ω,VGE= +15V to 0V|
|Erec|Reverse recoveryenergyof the diode|—|165|—|μJ|TJ= 175oC<br>VCC= 400V, IF= 8.0A<br>VGE= 15V,Rg= 47Ω,L=1mH,LS=150nH|
|trr|DiodeReverserecovery time|—|60|—|ns||
|Irr|Peak Reverse RecoveryCurrent|—|14|—|A||
Notes:
- VCC = 80% (VCES), VGE = 20V, L = 100 μH, RG = 47 Ω.
- R θ is measured at TJ approximately 90°C �
- Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
- Pulse width limited by max. junction temperature.
- Values influenced by parasitic L and C in measurement
- When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
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24<br>22<br>pw ft | ft<br>20<br>18<br>16 2NEE<br>14 a Ne ee<br>12 ee ee<br>10 Pt A<br>8 PT EE KT<br>6 Pot EE EN<br>4<br>2 EERE<br>0 | | | tT Tl hldT CN<br>25 50 75 100 125 150 175<br> TC (°C)<br>IC (A)<br>**----- End of picture text -----**<br>
**Fig. 1** - Maximum DC Collector Current vs. Case Temperature
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100<br>10μs<br>10<br>100μs<br>1 DC 1ms<br>Tc = 25°C<br>Tj = 175°C Ssiiee serial<br>Single Pulse<br>0.1 iia<br>1 10 100 1000<br>VCE (V)<br>IC (A)<br>**----- End of picture text -----**<br>
**Fig. 3** - Forward SOA, TC = 25°C; TJ ≤ 175°C
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30<br>VGE = 18V<br>VGE = 15V<br>25 VGE = 12V<br>VGE = 10V<br>VGE = 8.0V<br>20<br>We<br>15<br>10<br>5<br>Se<br>0 Ae<br>0 2 4 6 8<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>
**Fig. 5** - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80μs
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110<br>100<br>ee<br>90<br>SEE<br>80<br>=<br>70 PNET<br>60<br>50 Nee<br>40 P ott dETN [KE]<br>30 Pot tT ENN<br>20<br>EEE NG<br>10<br>ee N<br>0<br>25 50 75 100 125 150 175<br> TC (°C)<br>Ptot (W)<br>**----- End of picture text -----**<br>
**Fig. 2** - Power Dissipation vs. Case Temperature
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100<br>10<br>Pe EC<br>ECHL<br>1<br>10 100 1000<br>VCE (V)<br>IC A)<br>**----- End of picture text -----**<br>
**Fig. 4** - Reverse Bias SOA TJ = 175°C; VCE = 15V
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30<br>VGE = 18V<br>25<br>VGE = 15V<br>VGE = 12V<br>VGE = 10V<br>20<br>VGE = 8.0V<br>2<br>15<br>10<br>5<br>a<br>Ann<br>0<br>0 2 4 6 8<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>
**Fig. 6** - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80μs
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30<br>VGE = 18V<br>25 VGE = 15V<br>VGE = 12V<br>VGE = 10V<br>20 VGE = 8.0V ia<br>15<br>10 en)PX2 eee<br>Ane<br>5 FL yr<br>0<br>0 2 4 6 8<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>
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80<br>70<br>60<br>ee) -40°C<br>50 25 ° C ff<br>175°C<br>40<br>30<br>e/av/a<br>20<br>ff<br>100 TDSD<br>0.0 1.0 2.0 3.0 4.0<br> VF (V)<br>IF (A)<br>**----- End of picture text -----**<br>
**Fig. 7** - Typ. IGBT Output Characteristics TJ = 175°C; tp = 80μs
**Fig. 8** - Typ. Diode Forward Characteristics tp = 80μs
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20<br>1816 ee<br>16<br>14 I CE = 4.0A<br>ICE = 8.0A<br>12 are<br>ICE = 16A<br>10 mnipize<br>a ae<br>864 anes<br>64 a<br>4 a ee<br>20 es ee<br>5 10 15 20<br> VGE (V)<br>Fig. 10 - Typical VCE vs. VGE<br>TJ = 25°C<br>35<br>T = 25°C<br>30 J<br>T = 175°C<br>J<br>Fly<br>25 [<br>20<br>ff<br>15<br>10 a ae<br>a<br>5<br>0 Ae<br>0 5 10 15<br> VGE (V)<br>ICE (A)<br>VCE (V)<br>**----- End of picture text -----**<br>
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20 20<br>1816 Dma 1816<br>14 | I CE = 4.0A 14<br>ICE = 8.0A<br>12 maize 12<br>ICE = 16A<br>10 mae 10 a<br>864 aeael is 864 a<br>20 C—O 020<br>5 10 15 20 5<br> VGE (V)<br>Fig. 9 - Typical VCE vs. VGE<br>TJ = -40°C<br>20 35<br>18 Pottto<br>30<br>16<br>14 |Tet]ft I CE = 4.0A 25<br>ICE = 8.0A<br>12<br>ICE = 16A 20<br>meee<br>10<br>15<br>8<br>6 re 10<br>4<br>fC<br>5<br>2 | |UPS__]<br>0 SEeEeSeSewy 0<br>5 10 15 20 0<br> VGE (V)<br>ICE (A)<br>VCE (V) VCE (V)<br>VCE (V)<br>**----- End of picture text -----**<br>
**Fig. 12** - Typ. Transfer Characteristics VCE = 50V; tp = 10μs
**Fig. 11** - Typical VCE vs. VGE TJ = 175°C
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500<br>450<br>Sa<br>400<br>350 Af<br>300 OSS<br>EOFF<br>250<br>200 SP E ON<br>150 LZ<br>100<br>Zee<br>50<br>0 ae<br>0 5 10 15 20<br> IC (A)<br>Energy (μJ)<br>**----- End of picture text -----**<br>
**Fig. 13** - Typ. Energy Loss vs. IC
TJ = 175°C; L = 1mH; VCE = 400V, RG = 47 Ω ; VGE = 15V.
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1000<br>_—<br>en tdOFF<br>100<br>— tF<br>tdON<br>SS<br>10 tR — {|<br>===<br>1 es ee ee<br>0 5 10 15 20<br>IC (A)<br>Swiching Time (ns)<br>**----- End of picture text -----**<br>
**Fig. 14** - Typ. Switching Time vs. IC TJ = 175°C; L=1mH; VCE= 400V RG= 47 Ω ; VGE= 15V
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350 1000<br>300<br>EOFF<br>a eee<br>250<br>td OFF<br>200 EON<br>100<br>| pp<br>150<br>100 Yl ee td ON<br>| | | ——— t R<br>50 tF<br>0 7Ft | ft ft 10 SS/—+|T|<br>0 25 50 75 100 125 0 25 50 75 100 125<br>RG ( Ω ) RG ( Ω )<br>Energy (μJ)<br>Swiching Time (ns)<br>**----- End of picture text -----**<br>
**Fig. 15** - Typ. Energy Loss vs. RG
TJ = 175°C; L = 1mH; VCE = 400V, ICE = 8A; VGE = 15V
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30<br>25 R G = 10 Ω<br>20 R G = 22 Ω<br>a<br>15 a RG =47 Ω<br>10 RG = 100 Ω<br>5 osS|<br>0 |<br>0 5 10 15 20<br>IF (A)<br>IRR (A)<br>**----- End of picture text -----**<br>
**Fig. 17** - Typical Diode IRR vs. IF TJ = 175°C
**Fig. 16** - Typ. Switching Time vs. RG TJ = 175°C; L=1mH; VCE= 400V
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ICE= 8A; VGE= 15V<br>25<br>20<br>15<br>10<br>5<br>0<br>0 25 50 75 100 125<br>RG ( Ω)<br>IRR (A)<br>**----- End of picture text -----**<br>
**Fig. 18** - Typical Diode IRR vs. RG TJ = 175°C; IF = 8.0A
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25 1400<br>10 Ω<br>1200 16A<br>22 Ω<br>20<br>a 47 Ω<br>1000<br> 100 Ω<br>15 800 a7 8.0A<br>600 | |VYNTT —<br>10 4.0A<br>400 fie<br>5 a ee|<br>2000 eeee eee<br>0<br>0 500 1000 1500<br>0 500 1000<br>diF /dt (A/μs)<br>diF /dt (A/μs)<br>IRR (A) QRR (nC)<br>**----- End of picture text -----**<br>
**Fig. 19** - Typical Diode IRR vs. diF/dt VCC= 400V; VGE= 15V; ICE= 8A; TJ = 175°C
**Fig. 20** - Typical Diode QRR VCC= 400V; VGE= 15V; TJ = 175°C
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500<br>450<br>400<br>——o<br>350 es ae<br>300<br>4a$4<br>250<br>200 10 Ω Vos<br>22 Ω<br>150 aan<br>47 Ω<br>100 100 Ω a<br>50 ee<br>0 ee<br>0 5 10 15 20<br>IF (A)<br>Fig. 21 - Typical Diode ERR vs. IF<br>TJ = 175°C<br>1000<br>Cies<br>anes<br>100<br>Coes<br>10<br>Sees Cres<br>Pp<br>ee ee<br>1<br>0 20 40 60 80 100<br>VCE (V)<br>Energy (μJ)<br>Capacitance (pF)<br>**----- End of picture text -----**<br>
**Fig. 23** - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
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18 80<br>16 70<br>14 AC 60<br>;<br>12 Poi \LFf 50<br>10 P| VAT | 40<br>8 | 30<br>P| ANF |<br>6 PY] 20<br>N\ |<br>4 Ffft EN\ | 10<br>8 10 12 14 16 18<br>VGE (V)<br>Fig. 22 - Typ. VGE vs Short Circuit Time<br>VCC=400V, TC =25°C<br>16<br>14<br>300V<br>400V<br>12 Op<br>10<br>8<br>6<br>fe<br>4<br>2<br>Pe<br>0 foi| |<br>0 5 10 15 20<br>Q G, Total Gate Charge (nC)<br>Time (μs)<br>VGE (V)<br>Current (A)<br>**----- End of picture text -----**<br>
**Fig. 24** - Typical Gate Charge vs. VGE ICE = 8A, L=600μH
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10<br>a a a | | |<br>1<br>D = 0.50<br>0.20<br>Pt 0.10 th<br>0.1 at 0.05 rt R1R1 R2R2 R3R3 Ri (°C/W) τι (sec)<br>0.010.02 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 τ C τ 0.5555790.590565 0.0002160.00117<br>Ci= τ i / Ri<br>0.01 ete ae ee tT Ci= τ i / Ri yf 0.365255 rT 0.009076<br>oe? 26 [|<br>SINGLE PULSE<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001 breFT TE TEre EE HEil<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)<br>10<br>D = 0.50<br>ES cert<br>1 Pt 0.20 TT TY om<br>0.10<br>0.05<br>| HePh<br>0.1 PT 0.02 I rrr | LTPP<br>R1R1 R2R2 R3R3 Ri (°C/W) τι (sec)<br>RS 0.01 τ J τ J τ C τ 0.821094 0.000233<br>τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 1.913817 0.001894<br>6 | T T T ——>—<br>0.01 mp7SS 2S25 SINGLE PULSE 11FE Ci= Ci= τ et i /τ Rii / Ri te—}— 0.926641 0.014711<br>( THERMAL RESPONSE ) Notes:<br>PIE EI EE 1. Duty Factor D = t1/t2 il<br>2. Peak Tj = P dm x Zthjc + Tc<br>Seee eer elleet eee | a ll<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>
**Fig. 26.** Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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L<br>VCC<br>DUT<br>0<br>1K<br>**----- End of picture text -----**<br>
**Fig.C.T.1** - Gate Charge Circuit (turn-off)
**Fig.C.T.3** - S.C.SOA Circuit
**Fig.C.T.5** - Resistive Load Circuit
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L<br>80 V + DUT<br>- 480V<br>Rg<br>**----- End of picture text -----**<br>
**Fig.C.T.2** - RBSOA Circuit
**Fig.C.T.4** - Switching Loss Circuit
**Fig.C.T.6** - Typical Filter Circuit for V Measurement (BR)CES
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500 25<br>400 20<br>300 | 90% ICE 15<br>tf<br>200 10<br>5% ICE<br>|e<br>100 5<br>5% VCE<br>0 0<br>EOFF Loss<br>-100 -5<br>-0.40 0.10 0.60 1.10<br>Time(μs)<br> (V)<br>CE<br>V<br>**----- End of picture text -----**<br>
**Fig. WF1** - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4
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15<br>QRR<br>10<br>tRR<br>5<br>0<br>10%<br>-5<br>Peak<br>Peak<br>IRR<br>-10 IRR<br>-15<br>-20<br>-0.05 0.05 0.15<br>time (μS)<br> (A)<br>RR<br>I<br>**----- End of picture text -----**<br>
WF.3- Typ. Reverse Recovery Waveform @ TJ = 175°C using CT.4
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500 25<br>400 20<br>tr<br>A<br>300 15<br>TEST<br>90% test<br>200 fl t 10<br>100 10% test current 5<br>5% VCE<br>0 0<br>EON Loss<br>-100 -5<br>11.70 11.90 12.10<br>Time (μs)<br>Fig. WF2 - Typ. Turn-on Loss Waveform<br>@ TJ = 175°C using Fig. CT.4<br>500 100<br>VCE<br>400 80<br>ht ICE<br>300 60<br>200 40<br>100 20<br>eo<br>0 0<br>-100 -20<br>-5.00 0.00 5.00 10.00<br>time (μS)<br> (V)<br>CE<br>V<br> (V) (A)<br>VCE ICE<br>**----- End of picture text -----**<br>
WF.4- Typ. Short Circuit Waveform @ TJ = 25°C using CT.3
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EXAMPLE: THIS IS AN IRF1010<br>LOT CODE 1789 INTERNATIONAL PART NUMBER<br>ASSEMBLED ON WW 19, 2000 RECTIFIER I RF 1010<br>IN THE ASSEMBLY LINE "C" LOGO TOR 019¢<br>17 89 DATE CODE<br>YEAR 0 = 2000<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead - Free" LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>
TO-220AB packages are not recommended for Surface Mount Application.
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THIS IS AN IRF530S WITH<br>LOT CODE 8024<br>ASSEMBLED ON WW 02, 2000<br>IN THE ASSEMBLY LINE "L"<br>**----- End of picture text -----**<br>
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PART NUMBER<br>INTERNATIONAL<br>(a<br>RECTIFIER F530S<br>LOGO<br>TeaR 002.<br>DATE CODE<br>80 24<br>YEAR 0 = 2000<br>ASSEMBLY<br>LOT CODE 7 7 , WEEK 02<br>u u LINE L<br>PART NUMBER<br>INTERNATIONAL<br>c S<br>RECTIFIER F530S<br>LOGO TEAR P002 A DATE CODE<br>P = DESIGNATES LEAD - FREE<br>80 24<br>PRODUCT (OPTIONAL)<br>ASSEMBLY J U L<br>LOT CODE T at YEAR 0 = 2000<br>U L WEEK 02<br>A = ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>
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OR<br>**----- End of picture text -----**<br>
## Dimensions are shown in millimeters (inches))
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TRR<br>00°90<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>= 0.342 (.0135)<br>FEED DIRECTION 2 _____ 1.85 (.073) J eogoe als ol 11.60 (.457) - |<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>= 16.10 (.634) | r 4.52 (.178)<br>15.90 (.626)<br>a —_ N<br>FEED DIRECTION<br>**----- End of picture text -----**<br>
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13.50 (.532) 27.40 (1.079)<br>g 12.80 (.504) 23.90 (.941) a e<br>4<br>330.00 60.00 (2.362)<br>g (14.173) al g MIN.<br> MAX.<br>30.40 (1.197)<br>NOTES : MAX.<br>1. COMFORMS TO EIA-418.2. CONTROLLING DIMENSION: MILLIMETER. 26.40 (1.03924.40 (.961) T ) c 4<br>3. DIMENSION MEASURED @ HUB.<br>3<br>**----- End of picture text -----**<br>
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
## **Qualification Information[† ]**
|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br> (per JEDEC JESD47F)<br>††||
|**Moisture Sensitivity Level**|D<br>2Pak|MSL1|
||TO-220|N/A|
|**RoHS Compliant**|Yes||
- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
- †† Applicable version of JEDEC standard at the time of product release
|**Revision History**|**Revision History**|
|---|---|
|**Date**<br>~~a~~|**Comments**|
|11/14/2014|•Added note<br>IFMDiode Maximum Forward Current on page 1.<br>•Added note<br>switching losses test condition on page 2.<br>• Updated package outline on page 10.<br>6)|
**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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