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IRGB4062DPBF
IGBT, 48 A, 1.65 V, 250 W, 600 V, TO-220, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Power Dissipation: 250W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220
- Operating Temperature Max: 175°C
- Continuous Collector Current: 48A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.65V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 3.8 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## _**INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE**_ **==> picture [265 x 248] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>VCES = 600V<br>IC = 24A, TC = 100°C<br>G tSC 5μs, TJ(max) = 175°C<br>E VCE(on) typ. = 1.65V<br>n-channel<br>_<br>C C C<br>E E<br>E C C<br>“~ e. G e. G<br>G [C]<br>TO-220AB TO-247AC TO-247AD<br>IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF<br>**----- End of picture text -----**<br> ## _**Features**_ - Low VCE (ON) Trench IGBT Technology - Low switching losses - Maximum Junction temperature 175 °C - 5 μS short circuit SOA - Square RBSOA - 100% of the parts tested for ILM - Positive VCE (ON) Temperature co-efficient - Ultra fast soft Recovery Co-Pak Diode - Tight parameter distribution - Lead Free Package ## _**Benefits**_ - High Efficiency in a wide range of applications - Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses - Rugged transient Performance for increased reliability - Excellent Current sharing in parallel operation - Low EMI |**_Absolute Maximum Ratings_**|**_Absolute Maximum Ratings_**<br>**_Parameter_**|**_Max._**|**_Units_**| |---|---|---|---| |VCES|Collector-to-Emitter Voltage<br>~~a~~|600<br>~~a~~|V<br>~~a~~| |IC@ TC= 25°C|Continuous CollectorCurrent<br>~~a~~<br><br>~~©~~|48<br>~~a~~<br><br>~~©~~|A<br>~~a~~<br>~~a7~~| |IC@ TC= 100°C|Continuous CollectorCurrent<br>~~a~~<br>~~©~~|24<br>~~a~~<br>~~©~~|| |ICM|Pulse Collector Current,VGE= 15V<br><br>~~©~~<br>~~Rt~~|72<br><br>~~©~~|| |ILM|Clamped Inductive Load Current,VGE= 20V<br><br>~~©~~<br>~~Rt~~|96<br><br>~~©~~|| |IF@ TC= 25°C|Diode Continous Forward Current<br><br>~~©~~<br>~~Rt~~<br>~~a~~|48<br><br>~~©~~<br>~~a~~|| |IF@ TC= 100°C<br>~~a~~|Diode ContinousForward Current<br><br>~~©~~<br>~~a~~<br>~~a~~|24<br><br>~~©~~<br>~~a~~<br>~~DT~~|| |IFM<br>~~a~~|Diode Maximum Forward Current<br><br>~~©~~<br>~~a~~|96<br><br>~~©~~<br>~~DT~~|| |VGE<br>~~a~~<br>~~Ce~~|Continuous Gate-to-Emitter Voltage<br>~~a~~<br>~~ee~~|±20<br>~~DT~~<br>~~ee~~|V<br>~~ee~~| ||TransientGate-to-Emitter Voltage<br>~~ee~~<br>~~Ce~~|±30<br>~~ee~~|| |PD@ TC= 25°C<br>~~Ce~~|Maximum Power Dissipation<br>~~ee~~<br>~~a~~<br>~~Ce~~|250<br>~~ee~~<br>~~a~~|W<br>~~ee~~<br>~~po~~| |PD@ TC= 100°C<br>~~Ce~~<br>~~po~~|Maximum Power Dissipation<br>~~Ce~~<br>~~po~~|125<br>~~po~~|| |TJ<br>TSTG<br>~~Ce~~<br>~~po~~|Operating Junction and<br>Storage Temperature Range<br>~~Ce~~<br>~~po~~|-55 to +175<br>~~po~~|°C<br>~~po~~| |~~po~~|Soldering Temperature, for 10 sec.<br>~~po~~|300 (0.063 in. (1.6mm) from case)<br>~~po~~|| |~~po~~|MountingTorque, 6-32or M3 Screw<br>~~po~~<br>~~a~~|10lbf·in(1.1 N·m)<br>~~po~~<br>~~a~~|~~po~~<br>~~a~~| ## _**Thermal Resistance**_ ||**_Parameter_**|**_Min._**|**_Typ._**|**_Max._**|**_Units_**| |---|---|---|---|---|---| |R JC (IGBT)|Thermal Resistance Junction-to-Case-(each IGBT)TO-220AB|–––|–––|0.60|°C/W| |R JC (Diode)|Thermal Resistance Junction-to-Case-(each Diode)TO-220AB|–––|–––|1.53|| |R JC (IGBT)|Thermal Resistance Junction-to-Case-(each IGBT)TO-247|–––|–––|0.65|| |R JC (Diode)|Thermal Resistance Junction-to-Case-(each Diode)TO-247|–––|–––|1.62|| |R CS|Thermal Resistance,Case-to-Sink(flat, greased surface)|–––|0.50|–––|| |R JA|Thermal Resistance,Junction-to-Ambient(typical socket mount)|–––|80|–––|| ���������������������������������������� ## _**Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**_ ||**_Parameter_**|**_Min._**|**_Typ._**|**_Max. _**|**_Units _**|**_Conditions_**|**_Ref.Fig_**| |---|---|---|---|---|---|---|---| |V(BR)CES|Collector-to-Emitter Breakdown Voltage|600|—|—|V|VGE= 0V, IC= 100μA�|CT6| |V(BR)CES/TJ|Temperature Coeff. of Breakdown Voltage|—|0.30|—|V/°C|VGE= 0V,IC= 1mA(25°C-175°C)|CT6| |VCE(on)|Collector-to-Emitter Saturation Voltage|—|1.60|1.95|V|IC= 24A, VGE= 15V, TJ= 25°C|5,6,7<br>9,10,11| |||—|2.03|—||IC= 24A,VGE= 15V,TJ= 150°C|| |||—|2.04|—||IC= 24A, VGE= 15V, TJ= 175°C|| |VGE(th)|Gate Threshold Voltage|4.0|—|6.5|V|VCE= VGE,IC= 700μA|9, 10,<br>11, 12| |VGE(th)/TJ|Threshold Voltage temp. coefficient|—|-18|—|mV/°C|VCE= VGE, IC= 1.0mA(25°C - 175°C)|| |gfe|Forward Transconductance|—|17|—|S|VCE= 50V,IC= 24A,PW = 80μs|| |ICES|Collector-to-Emitter Leakage Current|—|2.0|25|μA|VGE= 0V, VCE= 600V|| |||—|775|—||VGE= 0V,VCE= 600V,TJ= 175°C|| |VFM|Diode Forward Voltage Drop|—|1.80|2.6|V|IF= 24A|8| |||—|1.28|—||IF= 24A,TJ= 175°C|| |IGES|Gate-to-Emitter Leakage Current|—|—|±100|nA|VGE= ±20V|| ## _**Switching Characteristics @ TJ = 25°C (unless otherwise specified)**_ ||**_Parameter_**|**_Min._**|**_Typ._**|**_Max. _**|**_Units_**|**_Conditions_**|**_Ref.Fig_**| |---|---|---|---|---|---|---|---| |Qg|Total Gate Charge(turn-on)|—|50|75|nC|IC= 24A<br>VGE= 15V<br>VCC= 400V|24<br>CT1| |Qge|Gate-to-Emitter Charge(turn-on)|—|13|20|||| |Qgc|Gate-to-Collector Charge(turn-on)|—|21|31|||| |Eon|Turn-On SwitchingLoss|—|115|201|μJ|IC= 24A, VCC= 400V, VGE= 15V<br>RG= 10, L = 200μH, LS= 150nH, TJ= 25°C<br>Energylosses include tail & diode reverse recovery|CT4| |Eoff|Turn-Off SwitchingLoss|—|600|700|||| |Etotal|Total SwitchingLoss|—|715|901|||| |td(on)|Turn-On delaytime|—|41|53|<br>ns|IC= 24A, VCC= 400V, VGE= 15V<br>RG= 10, L = 200μH, LS= 150nH, TJ= 25°C|CT4| |tr|Rise time|—|22|31|||| |td(off)|Turn-Off delaytime|—|104|115|||| |tf|Fall time|—|29|41|||| |Eon|Turn-On SwitchingLoss|—|420|—|<br>μJ|IC= 24A, VCC= 400V, VGE=15V<br>RG=10, L= 200μH, LS=150nH, TJ= 175°C��<br>Energylosses include tail & diode reverse recovery|13, 15<br>CT4<br>WF1, WF2| |Eoff|Turn-Off SwitchingLoss|—|840|—|||| |Etotal|Total SwitchingLoss|—|1260|—|||| |td(on)|Turn-On delaytime|—|40|—|<br>ns|IC= 24A, VCC= 400V, VGE= 15V<br>RG= 10, L = 200μH, LS= 150nH<br>TJ= 175°C|14, 16<br>CT4<br>WF1<br>WF2| |tr|Rise time|—|24|—|||| |td(off)|Turn-Off delaytime|—|125|—|||| |tf|Fall time|—|39|—|||| |Cies|Input Capacitance|—|1490|—|pF|VGE= 0V<br>VCC= 30V<br>f = 1.0Mhz|23| |Coes|Output Capacitance|—|129|—|||| |Cres|Reverse Transfer Capacitance|—|45|—|||| |RBSOA|Reverse Bias Safe Operating Area|FULL SQUARE||||TJ= 175°C, IC= 96A<br>VCC= 480V, Vp =600V<br>Rg= 10, VGE= +20V to 0V|4<br>CT2| |SCSOA|Short Circuit Safe Operating Area|5|—|—|μs|VCC= 400V, Vp =600V<br>Rg= 10, VGE= +15V to 0V|22, CT3<br>WF4| |Erec|Reverse RecoveryEnergyof the Diode|—|621|—|μJ|TJ= 175°C<br>VCC= 400V, IF= 24A<br>VGE= 15V,Rg= 10,L =200μH,Ls= 150nH|17, 18, 19<br>20, 21<br>WF3| |trr|Diode Reverse RecoveryTime|—|89|—|ns||| |Irr|Peak Reverse RecoveryCurrent|—|37|—|A||| ## _**Notes:**_ > � VCC = 80% (VCES), VGE = 20V, L = 100μH, RG = 10 > � This is only applied to TO-220AB package. - Pulse width limited by max. junction temperature. - Refer to AN-1086 for guidelines for measuring V(BR)CES safely. � ��������������������������������������������������������������������������������������������������������������������������������������� **==> picture [201 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>45<br>4035 PNT]TINSELET y-<br>30 PT<br> TIN ETT |<br>25 PTEENRE ELE<br>20<br>EEEEENCEE<br>15 aA<br>10<br>CEE IN ER<br>5<br>PEEEEEERae RS<br>0<br>0 20 40 60 80 100 120 140 160 180<br> TC (°C)<br>IC (A)<br>**----- End of picture text -----**<br> _**Fig. 1**_ - Maximum DC Collector Current vs. Case Temperature **==> picture [207 x 194] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>10μsec<br>10 LILI NSIS TTT aI TT<br>100μsec<br>poe ONS eee se<br>1 1msec<br>Tc = 25°C<br>DC<br>Tj = 175°C<br>0.1 Single Pulse 000<br>1 10 100 1000 10000<br>VCE (V)<br>IC (A)<br>**----- End of picture text -----**<br> _**Fig. 3**_ - Forward SOA TC = 25°C, TJ 175°C; VGE =15V **==> picture [196 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> 90<br>80<br>an eS<br>70 V GE = 18V<br>| ||<br>VGE = 15V<br>60 VGE = 12V<br>| VGE = 10V<br>50 VGE = 8.0V<br>40<br>| | | yj<br>30<br>Zee<br>2010 |W]PTT[| Zt |<br>| REEL<br>0<br>0 1 2 3 4 5 6 7 8<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br> _**Fig. 5**_ - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80μs **==> picture [205 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> 300<br>250<br>PEL EEE<br>N<br>200<br>ENG<br>SeRNGEEEe<br>150 N\<br>PAPEETE<br>100 aN<br>50 PT EELIE NE<br>0 SARRSSERS N<br>0 20 40 60 80 100 120 140 160 180<br> TC (°C)<br>Ptot (W)<br>**----- End of picture text -----**<br> _**Fig. 2**_ - Power Dissipation vs. Case Temperature **==> picture [205 x 433] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>eeleGe<br>10 ee ill<br>1 lll<br>10 100 1000<br>VCE (V)<br>Fig. 4 - Reverse Bias SOA<br>TJ = 175°C; VGE =20V<br>90<br>80<br>it tat | |<br>70<br>Si NSE<br>VGE = 18V<br>60 VGE = 15V<br>50 |S VGE = 12V<br>VGE = 10V<br>VGE = 8.0V<br>40<br>| | Wt<br>30<br>|| | |<br>2010 IAogttt<br>0 WW|AL][|] [|<br>0 1 2 3 4 5 6 7 8<br> VCE (V)<br>ICE (A)<br>IC (A)<br>**----- End of picture text -----**<br> _**Fig. 6**_ - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80μs **==> picture [474 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> 9080 V GE = 18V | fl/ — 120<br>VGE = 15V 100<br>70 VGE = 12V<br>VGE = 10V<br>60 VGE = 8.0V anne 80 -40°c =<br>25°C<br>50<br>175°C<br>40 / aN 60 ~S 7<br>30 40<br>HA<br>20<br>Te of<br>20<br>10 TAT<br>0 ACCEL 0 TY |<br>0 1 2 3 4 5 6 7 8 0.0 1.0 2.0 3.0<br> VF (V)<br> VCE (V)<br>ICE (A) IF (A)<br>**----- End of picture text -----**<br> _**Fig. 7**_ - Typ. IGBT Output Characteristics TJ = 175°C; tp = 80μs **==> picture [195 x 422] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>18 ee<br>16<br>14<br>12 I CE = 12A<br>10 ICE = 24A<br>8 ee I CE = 48A<br>6 a<br>4<br>es a<br>2<br>i AA<br>0 ee ee<br>5 10 15 20<br> VGE (V)<br>Fig. 9 - Typical VCE vs. VGE<br>TJ = -40°C<br>20<br>18<br>aa<br>16<br>14 i<br>12 I CE = 12A<br>10 otf ICE = 24A<br>8 I CE = 48A<br>nee<br>6<br>4<br>2<br>SS<br>0<br>5 10 15 20<br> VGE (V)<br>VCE (V)<br>VCE (V)<br>**----- End of picture text -----**<br> _**Fig. 11**_ - Typical VCE vs. VGE TJ = 175°C _**Fig. 8**_ - Typ. Diode Forward Characteristics tp = 80μs **==> picture [206 x 420] intentionally omitted <==** **----- Start of picture text -----**<br> 20 a<br>18<br>16<br>14<br>12 I CE = 12A<br>10 ICE = 24A<br>8 nie I CE = 48A<br>| ot<br>6<br>4 ie |<br>2 ee<br>0 eeee<br>5 10 15 20<br> VGE (V)<br>Fig. 10 - Typical VCE vs. VGE<br>TJ = 25°C<br>120<br>100 | |<br>TJ = 25°C<br>80 T e/ J = 175°C a<br>60 of<br>40 fe<br>200 YF<br>0 5 10 15<br> VGE (V)<br>VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br> _**Fig. 12**_ - Typ. Transfer Characteristics VCE = 50V; tp = 10μs **==> picture [506 x 655] intentionally omitted <==** **----- Start of picture text -----**<br> 1800 1000<br>1600<br>Ee ee es<br>1400 TTF]J FPP tdOFF ee<br>1200 a Ae 100 ppee ee<br>1000 EOFF tdON<br>800 ff t F<br>600 Sf EON | 10 SSFae tR<br>400<br>200 PF —<br>0 Oey, | 1 ————Feee es<br>0 10 20 30 40 50 60 10 20 30 40 50<br>IC (A)<br>IC (A)<br>Fig. 13 - Typ. Energy Loss vs. ICC Fig. 14 - Typ. Switching Time vs. IC<br> = 175°C; L = 200μH; VCE = 400V, RG = 10; VGE = 15VCE = 400V, RG = 10; VGE = 15V= 400V, RG = 10; VGE = 15VG = 10; VGE = 15V= 10; VGE = 15V; VGE = 15V; VGE = 15VGE = 15V= 15V TJ = 175°C; L = 200μH; VCE = 400V, RG = 10; VGE = 15V<br>1600 1000<br>1400<br>1200 44i ae ——— tdOFF LT<br>EON<br>1000 Aaa |<br>EOFF<br>800 100<br>600 A a tdON<br>400 PORE| <aeea<br>t F<br>200 f+ tR eee eee<br>0 es T_T 10 TriFf| iy.ft<br>0 25 50 75 100 125 0 25 50 75 100 125<br>Rg () RG ()<br>Fig. 15 - Typ. Energy Loss vs. RGG Fig. 16 - Typ. Switching Time vs. RG<br> = 175°C; L = 200μH; VCE = 400V, ICE = 24A; VGE = 15VCE = 400V, ICE = 24A; VGE = 15V= 400V, ICE = 24A; VGE = 15VCE = 24A; VGE = 15V= 24A; VGE = 15VGE = 15V= 15V TJ = 175°C; L = 200μH; VCE = 400V, ICE = 24A; VGE = 15V<br>40 45<br>RG = 10 Fe<br>40<br>35<br>A<br>3530<br>30<br>RG = 22 30 F\Aeif|Aeif| ft<br>25 25<br>RG = 47 20<br>20 Nee<br>ee<br>RG = 100 1510<br>15<br>10 P||| ff<br>ee<br>10 5<br>0 10 20 30 40 50 60 0 25 50 75 100 125<br>IF (A) RG (<br>Energy (μJ)<br>Swiching Time (ns)<br>Swiching Time (ns)<br>IRR (A) IRR (A)<br>Energy (μJ)<br>**----- End of picture text -----**<br> _**Fig. 13**_ - Typ. Energy Loss vs. ICC TJ = 175°C; L = 200μH; VCE = 400V, RG = 10; VGE = 15VCE = 400V, RG = 10; VGE = 15V= 400V, RG = 10; VGE = 15VG = 10; VGE = 15V= 10; VGE = 15V; VGE = 15V; VGE = 15VGE = 15V= 15V _**Fig. 15**_ - Typ. Energy Loss vs. RGG TJ = 175°C; L = 200μH; VCE = 400V, ICE = 24A; VGE = 15VCE = 400V, ICE = 24A; VGE = 15V= 400V, ICE = 24A; VGE = 15VCE = 24A; VGE = 15V= 24A; VGE = 15VGE = 15V= 15V **==> picture [201 x 194] intentionally omitted <==** **----- Start of picture text -----**<br> 45<br>Fe<br>40<br>A<br>3530 if|| ft<br>F\Aeif|Aeif|<br>25<br>20<br>Nee<br>ee<br>1510 P||| ff<br>ee<br>5<br>0 25 50 75 100 125<br>RG (<br>IRR (A)<br>**----- End of picture text -----**<br> _**Fig. 17**_ - Typ. Diode IRR vs. IF TJ = 175°C _**Fig. 18**_ - Typ. Diode IRR vs. RG TJ = 175°C **==> picture [204 x 194] intentionally omitted <==** **----- Start of picture text -----**<br> 4540 a ee<br>35<br>Sy<br>30<br>25<br>20<br>PO<br>15 Ze<br>105 nna ee ee<br>0 500 1000 1500<br>diF /dt (A/μs)<br>IRR (A)<br>**----- End of picture text -----**<br> _**Fig. 19**_ - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 24A; TJ = 175°C **==> picture [205 x 427] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>800<br>TA RG = 47<br>RG = 10<br>600<br>neu R = 22<br>G<br>R G = 100<br>400<br>200<br>0<br>0 10 20 30 40 50 60<br>IF (A)<br>Fig. 21 - Typ. Diode ERR vs. IF<br>TJ = 175°C<br>10000<br>—EE—EE Eee eee<br>1000 Cies<br>===<br>SS<br>——— =<br>100 ASR Coes<br>Cres<br>10 es ee<br>0 20 40 60 80 100<br>VCE (V)<br>Energy (μJ)<br>Capacitance (pF)<br>**----- End of picture text -----**<br> _**Fig. 23**_ - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz **==> picture [233 x 427] intentionally omitted <==** **----- Start of picture text -----**<br> 4000<br>48A<br>me<br>3500<br>10<br>3000<br>ER 22<br>2500<br> 47<br>100 24A<br>2000<br>oar,<br>1500<br>aes 12A<br>1000 Pp be |<br>500 Pf<br>0 500 1000 1500<br>diF /dt (A/μs)<br>Fig. 20 - Typ. Diode QRR vs. diF/dt<br>VCC = 400V; VGE = 15V; TJ = 175°C<br>16 280<br>14 240<br>12 200<br>10 160<br>8 120<br>6 80<br>4 40<br>8 10 12 14 16 18<br>VGE (V)<br>QRR (nC)<br>Time (μs) Current (A)<br>**----- End of picture text -----**<br> _**Fig. 22**_ - VGE vs. Short Circuit Time VCC = 400V; TC = 25°C **==> picture [194 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>14 VCES = 300V<br>VCES = 400V<br>12 V7 |<br>ea<br>10 aa Yi | |<br>8<br>eee<br>6<br>PLY ELT LLL<br>4<br>2<br>0 7CCCEEEE<br>0 5 10 15 20 25 30 35 40 45 50 55<br>Q G, Total Gate Charge (nC)<br>VGE, Gate-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br> _**Fig. 24**_ - Typical Gate Charge vs. VGE ICE = 24A; L = 600μH **==> picture [439 x 521] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>D = 0.50<br>0.2 0<br>0.1<br>ee 0.10 ese ceed<br>0.05 R1 R1 R2 R2 Ri (°C/W) i (sec)<br>0.01 0. 0.0102 J J1 1 2 2 C 0.2329 0.0002340.3631 0.007009<br>Ci= iRi<br>SINGLE PULSE Ci iRi<br>0.001 aiee ( THERMAL RESPONSE )<br>Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>HEHEHE<br>0.0001 PT ll<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-220AB<br>10<br>1 D = 0.50<br>0.20<br>0 .10<br>0.1 0.05<br>0.020.01 J J R1R1 R2R2 R3R3 CRi (0.476 0.000763°C/W) i (sec)<br>0.01 11 2 2 33 0.647 0.003028<br>HE [PPP]<br>=e Ci= iRi 0.406 0.023686<br>Ci iRi<br>0.001 err<br>SINGLE PULSE Notes:<br>a ( THERMAL RESPONSE ) Oe 1. Duty Factor D = t1/t2 meaall<br>2. Peak Tj = P dm x Zthjc + Tc<br>PE ll<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br> _**Fig. 26.**_ Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) TO-220AB **==> picture [445 x 545] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>eee eee ent eee ee<br>ee ee ee es ee ee ee ee<br>D = 0.50<br>Pe eee TH<br>Sta<br>0 . 20<br>0.1 msAae<br>0.10<br>Ti 0 . 0 5 tt ey | tt R 1R1 R 2R2 Ri (°C/W) i (sec) mal<br>ST Ai J J C [ 0.2782 0.000311 eal<br>P| 0.02 eer nme 1 1 22 — 0.3715 0.006347 TT<br>0.01 0.01<br>=ee Ci= iRi IN<br>ee Ci iRi<br>(Ee er =<br>Ee ee e e 2 Ose eere OeeeOe Oe ee ee QseeQe Q e Oe OOeOnOQ QOee QOee QOeeOO lO eeQOee eeeOO OOO<br>a ann SINGLE PULSE ee ee ee ee Notes: etel<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001 PailAM iin SELL LEA Baal ll<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 27. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-247<br>10<br>es Oe 1 ee OO On On<br>1 ee D = 0.50 ee St<br>0.20<br>i 0.10 a a a a Oa a en ee ee<br>0.1 0.05<br>See eee alll<br>0.02 R1R1 R2R2 R3R3 Ri (°C/W) i (sec)<br>0.01 J J C 0.693 0.001222<br>0.01 Sen 11 2 2 3 3 0.621 0.005254<br>ee eee -— il<br>Ci= iRi 0.307 0.038140<br>| | Ci iRi |<br>0.001 a SINGLE PULSE SUrr<br>Notes:<br>( THERMAL RESPONSE )<br>1. Duty Factor D = t1/t2<br>a ee ee ee ee ee eee el 2. Peak Tj = P dm x Zthjc + Tc LT<br>0.0001 Sr Seer Seeti SSetsi | ener,<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br> _**Fig. 28.**_ Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) TO-247 **==> picture [231 x 50] intentionally omitted <==** **----- Start of picture text -----**<br> L<br>VCC<br>DUT<br>0<br>1K<br>**----- End of picture text -----**<br> _**Fig.C.T.1**_ - Gate Charge Circuit (turn-off) **==> picture [86 x 51] intentionally omitted <==** **----- Start of picture text -----**<br> 4x<br>DC 0V<br>DUT<br>**----- End of picture text -----**<br> _**Fig.C.T.3**_ - S.C. SOA Circuit **==> picture [192 x 91] intentionally omitted <==** **----- Start of picture text -----**<br> L<br>N0Q<br>><br>80 V<br>DUT<br>480V<br>Rg<br>**----- End of picture text -----**<br> _**Fig.C.T.2**_ - RBSOA Circuit **==> picture [219 x 109] intentionally omitted <==** **----- Start of picture text -----**<br> diode clamp /<br>DU T<br>L<br>- 5V<br>DU T /<br>D RIVER VCC<br>|<br>Rg<br>**----- End of picture text -----**<br> _**Fig.C.T.4**_ - Switching Loss Circuit **==> picture [206 x 138] intentionally omitted <==** **----- Start of picture text -----**<br> VCC<br>R =<br>ICM<br>DUT<br>VCC<br>Rg<br>**----- End of picture text -----**<br> _**Fig.C.T.5**_ - Resistive Load Circuit _**Fig.C.T.6**_ - BVCES Filter Circuit **==> picture [213 x 258] intentionally omitted <==** **----- Start of picture text -----**<br> 600 30<br>tf<br>500 25<br>90% ICE<br>400 20<br>ICE VCE<br>300 C 15<br>200 op 10<br>5% VCE<br>100 ivan 5<br>5% ICE<br>0 on 0<br>EOFF Loss<br>-100 -5<br>-0.40 0.10 0.60<br>Time(μs)<br> (V)<br>CE<br>V<br>**----- End of picture text -----**<br> _**Fig. WF1**_ - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 **==> picture [204 x 254] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>QRR<br>20 mtireney |<br>10<br>en t ne RR<br>0<br>-10<br>Peak<br>ot wt 10%<br>-20 IRR Peak<br>IRR<br>-30-40 inlye| en\y<br>-50 Se<br>-0.15 -0.05 0.05 0.15 0.25<br>time (μS)<br> (A)<br>IRR<br>**----- End of picture text -----**<br> _**Fig. WF3**_ - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 **==> picture [212 x 258] intentionally omitted <==** **----- Start of picture text -----**<br> 600 60<br>500 50<br>VCE<br>C tr<br>400 40<br>ICE<br>300 C 30<br>90% test<br>200 Be aee 20<br>10% ICE<br>100 yr 10<br>5% VCE<br>0 oe 0<br>EON<br>-100 -10<br>11.70 11.90 12.10 12.30<br>Time (μs)<br> (V)<br>CE<br>V<br>**----- End of picture text -----**<br> _**Fig. WF2**_ - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 **==> picture [221 x 256] intentionally omitted <==** **----- Start of picture text -----**<br> 600 300<br>ICE<br>ae<br>500400 PoP NN 250200<br>300 VCE 150<br>200 oy 100<br>100 50<br>yf |e<br>0 |} 0<br>-100 —LL -50<br>-5.00 0.00 5.00 10.00<br>time (μS)<br> (V) (A)<br>VCE ICE<br>**----- End of picture text -----**<br> _**Fig. WF4**_ - Typ. S.C. Waveform @ TJ = 25°C using Fig. CT.3 TO-220AB package is not recommended for Surface Mount Application. TO-247AC package is not recommended for Surface Mount Application. TO-247AD package is not recommended for Surface Mount Application.
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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