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IRGB4056DPBF
IGBT, 24 A, 1.55 V, 140 W, 600 V, TO-220, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Power Dissipation: 140W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220
- Operating Temperature Max: 175°C
- Continuous Collector Current: 24A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.55V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 3.25 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IRGB4056DPbF ## _**INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE**_ ## **Features** - Low VCE (ON) Trench IGBT Technology - Low switching losses - Maximum Junction temperature 175 °C - 5 µS short circuit SOA - Square RBSOA - 100% of the parts tested for 4X rated current (ILM) - Positive VCE (ON) Temperature co-efficient - Ultra fast soft Recovery Co-Pak Diode - Tight parameter distribution **==> picture [264 x 116] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>VCES = 600V<br>IC = 12A, TC = 100°C<br>G tSC ≥ 5µs, TJ(max) = 175°C<br>E VCE(on) typ. = 1.55V<br>n-channel<br>**----- End of picture text -----**<br> - Lead Free Package ## **Benefits** **==> picture [65 x 88] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>E<br>G [C]<br>TO-220AB<br>**----- End of picture text -----**<br> - High Efficiency in a wide range of applications - Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses - Rugged transient Performance for increased reliability - Excellent Current sharing in parallel operation ||• Low EMI<br>TO-220AB||| |---|---|---|---| ||**G**<br>**C**<br>**E**||| ||Gate<br>Collector<br>Emitter||| ||**Absolute Maximum Ratings**||| |**Parameter**<br>**Max.**<br>**Units**<br>VCES<br>Collector-to-Emitter Voltage<br>600<br>V<br>IC@ TC= 25°C<br>Continuous Collector Current<br>24<br>IC@ TC= 100°C<br>Continuous Collector Current<br>12<br>ICM<br>Pulse Collector Current<br>48<br>ILM<br>Clamped Inductive Load Current<br>48<br>A<br>IF@ TC= 25°C<br>Diode Continous Forward Current<br>24<br>IF@ TC= 100°C<br>Diode Continous Forward Current<br>12<br>IFM<br>Diode Maximum Forward Current<br>48<br>VGE<br>Continuous Gate-to-Emitter Voltage<br>±20<br>V<br>Transient Gate-to-Emitter Voltage<br>±30<br>PD@ TC= 25°C<br>Maximum Power Dissipation<br>140<br>W<br>PD@ TC= 100°C<br>Maximum Power Dissipation<br>70<br>TJ<br>Operating Junction and<br>-55 to +175<br>TSTG<br>Storage Temperature Range<br>°C<br>SolderingTemperature,for 10 sec.<br>300(0.063 in.(1.6mm)from case)<br>MountingTorque,6-32 or M3 Screw<br>10 lbf·in(1.1 N·m)<br>~~aan~~<br>~~7~~<br>~~**L**n~~<br>~~a~~<br>~~a~~<br>~~LO~~<br>~~O~~<br>~~oo~~<br>~~Ce~~<br>~~LO~~<br>~~Be~~<br>~~po~~<br>~~TTT~~<br>~~Ee~~|||| ||**Thermal Resistance**||| ||**Parameter**<br>**Min.**<br>**Typ.**<br>**Max.**||**Units**| ||RθJC (IGBT)<br>Thermal Resistance Junction-to-Case-(each IGBT)<br>–––<br>–––<br>1.07||°C/W| ||RθJC (Diode)<br>Thermal Resistance Junction-to-Case-(each Diode)<br>–––<br>–––<br>3.66||| ||RθCS<br>Thermal Resistance,Case-to-Sink(flat, greased surface)<br>–––<br>0.50<br>–––||| ||RθJA<br>Thermal Resistance,Junction-to-Ambient(typical socket mount)<br>–––<br>80<br>–––||| www.irf.com 04/11/08 1 ## IRGB4056DPbF ## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** ||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|**Ref.Fig**| |---|---|---|---|---|---|---|---| |Qg|Total Gate Charge(turn-on)<br>~~a~~|—<br>~~a~~|25<br>~~a~~|38<br>~~a~~|nC|IC= 12A<br>VGE= 15V<br>VCC= 400V|24<br>CT1| |Qge|Gate-to-Emitter Charge(turn-on)<br>~~a~~|—<br>~~a~~|7.0<br>~~a~~|11<br>~~a~~|||| |Qgc|Gate-to-Collector Charge(turn-on)<br>~~es~~|—<br>~~es~~|11<br>~~es~~|16<br>~~es~~|||| |Eon|Turn-On SwitchingLoss<br>~~a~~|—<br>~~a~~|75<br>~~a~~|118<br>~~a~~|µJ|IC= 12A, VCC= 400V, VGE= 15V<br>RG= 22Ω, L = 200µH, LS= 150nH, TJ= 25°C<br>Energylosses include tail & diode reverse recovery|CT4| |Eoff|Turn-Off SwitchingLoss<br>~~ee~~|—<br>~~ee~~|225<br>~~ee~~|273<br>~~ee~~|||| |Etotal|Total SwitchingLoss<br>~~a~~|—<br>~~a~~|300<br>~~a~~|391<br>~~a~~|||| |td(on)|Turn-On delaytime<br>~~ee~~|—<br>~~ee~~|31<br>~~ee~~|40<br>~~ee~~|I<br>ns|IC= 12A, VCC= 400V, VGE= 15V<br>RG= 22Ω, L = 200µH, LS= 150nH, TJ= 25°C|CT4| |tr|Rise time<br>~~a~~|—<br>~~a~~|17<br>~~a~~|24<br>~~a~~|||| |td(off)|Turn-Off delaytime<br>~~ee~~|—<br>~~ee~~|83<br>~~ee~~|94<br>~~ee~~|||| |tf|Fall time<br>~~a~~|—<br>~~a~~|24<br>~~a~~|31<br>~~a~~|||| |Eon|Turn-On SwitchingLoss<br>~~ee~~|—<br>~~ee~~|185<br>~~ee~~|—<br>~~ee~~|I<br>µJ|IC= 12A, VCC= 400V, VGE=15V<br>RG=22Ω, L=100µH, LS=150nH, TJ= 175°C<br>Energylosses include tail & diode reverse recovery<br>co)|13, 15<br>CT4<br>WF1, WF2| |Eoff|Turn-Off SwitchingLoss<br>~~a~~|—|355|—|||| |Etotal|Total SwitchingLoss<br>~~ee~~|—<br>~~ee~~|540<br>~~ee~~|—<br>~~ee~~|||| |td(on)|Turn-On delaytime<br>~~a~~|—<br>~~a~~|30<br>~~a~~|—<br>~~a~~|I<br>ns|IC= 12A, VCC= 400V, VGE= 15V<br>RG= 22Ω, L = 200µH, LS= 150nH<br>TJ= 175°C|14, 16<br>CT4<br>WF1<br>WF2| |tr|Rise time<br>~~ee~~|—<br>~~ee~~|18<br>~~ee~~|—<br>~~ee~~|||| |td(off)|Turn-Off delaytime<br>~~a~~|—<br>~~a~~|102<br>~~a~~|—<br>~~a~~|||| |tf|Fall time<br>~~en~~|—<br>~~en~~|41<br>~~en~~|—<br>~~en~~|||| |Cies|Input Capacitance<br>~~en~~<br>~~a~~|—<br>~~en~~<br>~~a~~|765<br>~~en~~<br>~~a~~|—<br>~~en~~<br>~~a~~|pF|VGE= 0V<br>VCC= 30V<br>f = 1.0Mhz|23| |Coes|Output Capacitance<br>~~ee~~<br>~~rn~~|—<br>~~ee~~<br>~~rn~~|52<br>~~ee~~<br>~~rn~~|—<br>~~ee~~<br>~~rn~~|||| |Cres|Reverse Transfer Capacitance<br>~~rn~~|—<br>~~rn~~|23<br>~~rn~~|—<br>~~rn~~|||| |RBSOA|Reverse Bias Safe Operating Area<br>~~rn~~|FULL SQUARE<br>~~rn~~||||TJ= 175°C, IC= 48A<br>VCC= 480V, Vp =600V<br>Rg= 22Ω, VGE= +15V to 0V|4<br>CT2| |SCSOA|Short Circuit Safe Operating Area<br>~~rn ~~<br>~~EE~~|5<br> ~~rn~~<br>~~EE~~|—<br>~~rn~~|—<br>~~rn~~|µs|VCC= 400V, Vp =600V<br>Rg= 22Ω, VGE= +15V to 0V|22, CT3<br>WF4| |Erec|Reverse RecoveryEnergyof the Diode<br>~~C—O~~<br>~~EE~~|—<br>~~C—O~~<br>~~EE~~|280<br>~~C—O~~|—<br>~~C—O~~|µJ<br>~~C—O~~|TJ= 175°C<br>VCC= 400V, IF= 12A<br>VGE= 15V,Rg= 22Ω,L =200µH,Ls= 150nH|17, 18, 19<br>20, 21<br>WF3| |trr|Diode Reverse RecoveryTime<br>~~EE~~<br>~~es~~|—<br>~~EE~~<br>~~es~~|68<br>~~es~~|—<br>~~es~~|ns<br>~~es~~||| |Irr|Peak Reverse RecoveryCurrent<br>~~a~~|—<br>~~a~~|19<br>~~a~~|—<br>~~a~~|A<br>~~a~~||| ## **Notes:** > VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 22Ω. This is only applied to TO-220AB package. > Pulse width limited by max. junction temperature. > Refer to AN-1086 for guidelines for measuring V(BR)CES safely. www.irf.com 2 IRGB4056DPbF **==> picture [202 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> 25<br>20 T NE]\ Ey Ed.<br>15<br>N EE)<br>10 A LLEL ANGELL<br>5 P OPPIN<br>xe<br>0 P ELLLLEIA<br>0 20 40 60 80 100 120 140 160 180<br> TC (°C)<br>IC (A)<br>**----- End of picture text -----**<br> **Fig. 1** - Maximum DC Collector Current vs. Case Temperature **==> picture [208 x 432] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10 10µsec<br>Tn |<br>100µsec<br>1<br>1msec<br>Tc = 25°C<br>Tj = 175°C DC<br>Single Pulse<br>qa<br>0.1<br>1 10 100 1000 10000<br>VCE (V)<br>Fig. 3 - Forward SOA<br>TC = 25°C, TJ ≤ 175°C; VGE =15V<br>45<br>40 || [TKI | tf<br>35<br>PT<br>| TANT VGE = 18V<br>30<br>VGE = 15V<br>25 | | URSWAY VGE = 12V<br>VGE = 10V<br>20 PL 7 fe VGE = 8.0V<br>15 | | VLE<br>10 rI|MWI)<br>5<br>IVT LIA |<br>0 | Feee | yyctf Ty<br>0 1 2 3 4 5 6 7 8<br> VCE (V)<br>ICE (A)<br>IC (A)<br>**----- End of picture text -----**<br> **Fig. 5** - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs **==> picture [204 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> 150<br>125 C N EEL<br>\<br>100<br>E NE<br>75<br>\<br>50<br>P TTL IN EL<br>25<br>P LETE TING<br>P ELL<br>0 AN.<br>0 20 40 60 80 100 120 140 160 180<br> TC (°C)<br>Ptot (W)<br>**----- End of picture text -----**<br> **Fig. 2** - Power Dissipation vs. Case Temperature **==> picture [206 x 432] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10<br>p e<br>AEH<br>1<br>10 100 1000<br>VCE (V)<br>Fig. 4 - Reverse Bias SOA<br>TJ = 175°C; VGE =15V<br>45<br>40 | |TAT<br>35 V GE = 18V<br>tt<br>VGE = 15V<br>30 Thee VGE = 12V |<br>VGE = 10V<br>25 | | 7AS| VGE = 8.0V ||<br>20 | | | iZ te<br>15 ny Zen<br>10 ee<br>5<br>n/a<br>0 nADann<br>0 1 2 3 4 5 6 7 8<br> VCE (V)<br>IC (A)<br>ICE (A)<br>**----- End of picture text -----**<br> **Fig. 6** - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs www.irf.com 3 ## IRGB4056DPbF **==> picture [197 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> 45<br>40 V GE = 18V<br>CVT [TT]<br>VGE = 15V<br>35 VGE = 12V<br>7/2<br>VGE = 10V<br>30 VGE = 8.0V<br>25 tt<br>20<br>ae Akene<br>15 PT IYERE | I<br>10<br>PTY TN TT<br>5<br>JSS<br>0 » 4m<br>0 1 2 3 4 5 6 7 8<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br> **Fig. 7** - Typ. IGBT Output Characteristics TJ = 175°C; tp = 80µs **==> picture [195 x 422] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>a ee<br>181614 eae eiae |<br>12 ICE = 6.0A<br>10 a ie ICE = 12A<br>864 nme eistaesa ICE = 24A ee<br>2 a 0 ee<br>0 es ee<br>5 10 15 20<br> VGE (V)<br>Fig. 9 - Typical VCE vs. VGE<br>TJ = -40°C<br>20<br>18<br>16 n e ee<br>14<br>12 ICE = 6.0A<br>10 ICE = 12A<br>8 ICE = 24A<br>a ise<br>6<br>4<br>2 Wes<br>a<br>0<br>5 10 15 20<br> VGE (V)<br>VCE (V)<br>VCE (V)<br>**----- End of picture text -----**<br> **Fig. 11** - Typical VCE vs. VGE TJ = 175°C **==> picture [196 x 194] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>n y<br>70<br>60 a<br>a -40°c a<br>50<br>TC 25°C O<br>175°C<br>40<br>n ><br>30<br>, / Ae<br>20<br>p | Of |<br>10<br>w /a<br>T D<br>0<br>0.0 1.0 2.0 3.0 4.0<br> VF (V)<br>IF (A)<br>**----- End of picture text -----**<br> **Fig. 8** - Typ. Diode Forward Characteristics tp = 80µs **==> picture [205 x 422] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>a ee<br>18161412 PFaa eintteef I T CE = 6.0A<br>10 P L ICE = 12A<br>8 n ears ICE = 24A<br>6 m iata<br>4 e e a ee<br>2<br>a e a<br>0 es<br>5 10 15 20<br> VGE (V)<br>Fig. 10 - Typical VCE vs. VGE<br>TJ = 25°C<br>50<br>T = 25°C<br>J<br>40 S | T = 175°C 7<br>J<br>30<br>20<br>o f<br>10<br>L L<br>A ne<br>0<br>0 5 10 15<br> VGE (V)<br>VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br> **Fig. 12** - Typ. Transfer Characteristics VCE = 50V; tp = 10µs www.irf.com 4 IRGB4056DPbF **==> picture [478 x 428] intentionally omitted <==** **----- Start of picture text -----**<br> 800 1000<br>700<br>————<br>Sa eea<br>600 tdOFF<br>100<br>500 EOFF tF<br>400 a ee ee<br>tdON<br>300 —Lny , f f EON | |—_ ————<br>ae 10 —T<br>tR<br>200<br>100 a o a<br>0 | ofZ 1 e es eeee e es<br>0 10 20 30 5 10 15 20 25<br>IC (A)<br>IC (A)<br>Fig. 13 - Typ. Energy Loss vs. ICC Fig. 14 - Typ. Switching Time vs. ICC<br> = 175°C; L = 200µH; VCE = 400V, RG = 22Ω; VGE = 15VCE = 400V, RG = 22Ω; VGE = 15V= 400V, RG = 22Ω; VGE = 15VG = 22Ω; VGE = 15V= 22Ω; VGE = 15VΩ; VGE = 15V; VGE = 15VGE = 15V= 15V TJ = 175°C; L = 200µH; VCE = 400V, RG = 22Ω; VGE J = 175°C; L = 200µH; VCE = 400V, RG = 22Ω; VGE = 175°C; L = 200µH; VCE = 400V, RG = 22Ω; VGE CE = 400V, RG = 22Ω; VGE = 400V, RG = 22Ω; VGE G = 22Ω; VGE = 22Ω; VGE Ω; VGE ; VGE GE = 15V<br>500 1000<br>450<br>400 EOFF<br>350<br>> a Ee ee ee ee ee<br>300 tdOFF<br>poet 100 a a<br>250 EON<br>200 (7 i tF ie<br>150 fo | S E ERo<br>tdON<br>100<br>tR<br>50 “TL 7T_t_tt 10 p am]Ffft<br>0 25 50 75 100 125 0 25 50 75 100 125<br>Ω) RG (Ω)<br>Energy (µJ)<br>Energy (µJ)<br>Swiching Time (ns)<br>Swiching Time (ns)<br>**----- End of picture text -----**<br> **Fig. 13** - Typ. Energy Loss vs. ICC TJ = 175°C; L = 200µH; VCE = 400V, RG = 22Ω; VGE = 15VCE = 400V, RG = 22Ω; VGE = 15V= 400V, RG = 22Ω; VGE = 15VG = 22Ω; VGE = 15V= 22Ω; VGE = 15VΩ; VGE = 15V; VGE = 15VGE = 15V= 15V **Fig. 14** - Typ. Switching Time vs. ICC TJ = 175°C; L = 200µH; VCE = 400V, RG = 22Ω; VGE J = 175°C; L = 200µH; VCE = 400V, RG = 22Ω; VGE = 175°C; L = 200µH; VCE = 400V, RG = 22Ω; VGE CE = 400V, RG = 22Ω; VGE = 400V, RG = 22Ω; VGE G = 22Ω; VGE = 22Ω; VGE Ω; VGE ; VGE GE = 15V Rg (Ω) **Fig. 16** - Typ. Switching Time vs. RG TJ = 175°C; L = 200µH; VCE = 400V, ICE = 12A; VGE = 15V **Fig. 15** - Typ. Energy Loss vs. RG TJ = 175°C; L = 200µH; VCE = 400V, ICE = 12A; VGE = 15V **==> picture [199 x 194] intentionally omitted <==** **----- Start of picture text -----**<br> 25<br>RG = 10Ω<br>20<br>RG = 22Ω<br>15<br>RG = 47Ω<br>10<br>RG = 100Ω<br>5<br>0<br>0 10 20 30<br>IF (A)<br>IRR (A)<br>**----- End of picture text -----**<br> **==> picture [202 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> 25<br>20 K \ELL<br>15<br>E NEIN<br>10<br>| tt<br>5<br>0 25 50 75 100 125<br>RG (Ω)<br>IRR (A)<br>**----- End of picture text -----**<br> **Fig. 17** - Typ. Diode IRR vs. IF TJ = 175°C **Fig. 18** - Typ. Diode IRR vs. RG TJ = 175°C www.irf.com 5 ## IRGB4056DPbF **==> picture [499 x 441] intentionally omitted <==** **----- Start of picture text -----**<br> 25 1400<br>1200<br>20<br>24A<br>10Ω<br>1000<br>15 22Ω<br>Wa<br>800 47Ω<br>10 12A<br>600<br>100Ω<br>5<br>400 6.0A<br>0 A 200 oP<br>0 500 1000 1500 0 500 1000 1500<br>diF /dt (A/µs) diF /dt (A/µs)<br>Fig. 19 - Typ. Diode IRR vs. diF/dt Fig. 20 - Typ. Diode QRR vs. diF/dt<br>VCC = 400V; VGE = 15V; IF = 12A; TJ = 175°C VCC = 400V; VGE = 15V; TJ = 175°C<br>400 20 120<br>RG =G == 10ΩΩ 18 a a ee ee 110<br>350 RG = 22ΩG = 22Ω= 22ΩΩ 16 e eee 100<br>300<br>14 A e 90<br>250 RG = 47ΩG = 47Ω= 47Ω 47ΩΩ 12 PFf [\lee e e 80<br>200 10 | |NZLfF | ] 70<br>8 PF |Yi| 60<br>150<br>RG = 100ΩG = 100Ω= 100Ω 100ΩΩ 6 P | f f 50<br>100<br>4 | OX 40<br>5000 20 |ee YY| ee fl| ee [|| ee | | 3020<br>0 10 20 30 8 10 12 14 16 18<br>IF (A) VGE (V)<br>Energy (µJ)<br>Time (µs)<br>IRR (A) QRR (µC)<br>Current (A)<br>**----- End of picture text -----**<br> **==> picture [200 x 194] intentionally omitted <==** **----- Start of picture text -----**<br> 400<br>RG =G == 10ΩΩ<br>350<br>RG = 22ΩG = 22Ω= 22ΩΩ<br>300<br>250 RG = 47ΩG = 47Ω= 47Ω 47ΩΩ<br>200<br>150<br>RG = 100ΩG = 100Ω= 100Ω 100ΩΩ<br>100<br>5000<br>0 10 20 30<br>IF (A)<br>Energy (µJ)<br>**----- End of picture text -----**<br> **Fig. 22** - VGE vs. Short Circuit Time VCC = 400V; TC = 25°C **Fig. 21** - Typ. Diode ERR vs. IF TJ = 175°C **==> picture [195 x 194] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>14 VCES = 300V<br>VCES = 400V<br>12<br>10 P |<br>8<br>a<br>6<br>4<br>2 A na<br>0<br>0 5 10 15 20 25 30<br>Q G, Total Gate Charge (nC)<br>VGE, Gate-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br> **==> picture [205 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>1000 Cies<br>aaa<br>Nao<br>100<br>Coes<br>Cres<br>e e<br>10<br>0 20 40 60 80 100<br>VCE (V)<br>Capacitance (pF)<br>**----- End of picture text -----**<br> **Fig. 24** - Typical Gate Charge vs. VGE ICE = 12A; L = 600µH **Fig. 23** - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz www.irf.com 6 IRGB4056DPbF **==> picture [437 x 534] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>eet<br>Pee ie<br>1 E MI CCT rT<br>Se D = 0.50 ees c ee ee se et eee ee eee<br>; a a a a ctO e<br>ee 0 .20 | ee<br>0.1 Ph 0.10 tr a oe| R1 R | 1 R2 R2 R3R3 | Ri (°C/W) PLA τ FETE i (sec) |<br>0.05 τJ τJ τCτ 0.358 0.000171<br>|__| — 0.02 eeTgd |a τ1τ1 Ok τ2 τ2 τ3τ3 OS 0.424 0.001361 LI]i<br>— 0.01 oo) A || T T T il<br>0.01 — ane SINGLE PULSE i Ci= Ciτi/Rii/Ri 0.287 0.009475<br>( THERMAL RESPONSE ) Notes:<br>lla een a es 1. Duty Factor D = t1/t2 HT<br>0.001 aZot emrscta ese e t eetell| eR 2. Peak Tj = P dm x Zthjc + Tc Hil<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)<br>10<br>D = 0.50<br>0 ae e n a tt |<br>1 P t 0 .20 TT rm<br>0.10<br>pSa 0.05 t YL TTmRT<br>0.1 ct gg 0.02 gg 7 | R1 R1 R2 R2 R3R3 Ri (°C/W) τi (sec)<br>0.01 i e τJ τJ τCτ EAE 0.821094 0.000233 ETH<br>τ1τ1 τ2 τ2 τ3τ3 1.913817 0.001894<br>P CA T T T il<br>0.01 SINGLE PULSE Ci= Ciτi/Rii/Ri 0.926641 0.014711<br>er ( THERMAL RESPONSE ) eee eet ee Notes:<br>Aes | ee 0 | 1. Duty Factor D = t1/t2 HT<br>0.001 PE 2. Peak Tj = P dm x Zthjc + Tc ll<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br> **Fig. 26.** Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 7 ## IRGB4056DPbF **==> picture [231 x 50] intentionally omitted <==** **----- Start of picture text -----**<br> L<br>VCC<br>DUT<br>0<br>1K<br>**----- End of picture text -----**<br> **Fig.C.T.1** - Gate Charge Circuit (turn-off) **==> picture [86 x 52] intentionally omitted <==** **----- Start of picture text -----**<br> 4x<br>DC 360V<br>DUT<br>**----- End of picture text -----**<br> **Fig.C.T.3** - S.C. SOA Circuit **==> picture [206 x 138] intentionally omitted <==** **----- Start of picture text -----**<br> VCC<br>R =<br>ICM<br>DUT<br>VCC<br>Rg<br>**----- End of picture text -----**<br> **==> picture [192 x 90] intentionally omitted <==** **----- Start of picture text -----**<br> L<br>N09<br>><br>80 V<br>DUT<br>480V<br>Rg<br>**----- End of picture text -----**<br> **Fig.C.T.2** - RBSOA Circuit **==> picture [230 x 393] intentionally omitted <==** **----- Start of picture text -----**<br> diode clamp /<br>DU T<br>L<br>:<br>- 5V<br>DU T / :<br>D RIVER VCC<br>Rg<br>Fig.C.T.4 - Switching Loss Circuit<br>C force<br>400µH<br>D1 10K<br>C sense<br>G force DUT 0.0075µ<br>E sense<br>E force<br>**----- End of picture text -----**<br> **Fig.C.T.5** - Resistive Load Circuit **Fig.C.T.6** - BVCES Filter Circuit www.irf.com 8 IRGB4056DPbF **==> picture [180 x 236] intentionally omitted <==** **----- Start of picture text -----**<br> 500 25<br>400 20<br>300 Pf 15<br>i tf<br>90% ICE<br>200 10<br>ae<br>5% ICE<br>100 |e 5<br>5% VCE<br>i<br>0 0<br>EOFF Loss<br>-100 -5<br>-0.50 0.00 0.50 1.00 1.50 2.00<br>Time(µs)<br> (V)<br>CE<br>V<br>**----- End of picture text -----**<br> **Fig. WF1** - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 **==> picture [174 x 244] intentionally omitted <==** **----- Start of picture text -----**<br> 25<br>20<br>QRR<br>LL<br>15 ! \<br>tRR<br>10<br>5 ey<br>0<br>-5 18 10%<br>Peak<br>Peak<br>-10 Vy I RR IRR<br>-15<br>Vv<br>-20 eM|<br>-25 a<br>-0.05 0.05 0.15<br>time (µS)<br> (A)<br>IRR<br>**----- End of picture text -----**<br> **Fig. WF3** - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 **==> picture [181 x 238] intentionally omitted <==** **----- Start of picture text -----**<br> 500 50<br>400 40<br>tr<br>300 ae 30<br>TEST<br>200 90% test C 20<br>\<br>100 \\ 10<br>10% test<br>5% VCE<br>oR<br>0 a one 0<br>EON<br>-100 -10<br>11.70 11.80 11.90 12.00 12.10<br>Time (µs)<br> (V)<br>CE<br>V<br>**----- End of picture text -----**<br> **Fig. WF2** - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 **==> picture [196 x 245] intentionally omitted <==** **----- Start of picture text -----**<br> 500 250<br>400 200<br>[Ore oe<br>VCE<br>300 150<br>a<br>ICE<br>200 100<br>oy<br>100 50<br>TS<br>0 | LL. 0<br>-100 a -50<br>-5.00 0.00 5.00 10.00<br>time (µS)<br> (V) (A)<br>VCE ICE<br>**----- End of picture text -----**<br> **Fig. WF4** - Typ. S.C. Waveform @ TJ = 25°C using Fig. CT.3 www.irf.com 9 ## IRGB4056DPbF TO-220AB Package Outli TO-220AB package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. **IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 04/08 www.irf.com 10
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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