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IRGB15B60KDPBF
IGBT, 31 A, 1.8 V, 139 W, 600 V, TO-220AB, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Power Dissipation: 139W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220AB
- Operating Temperature Max: 150°C
- Continuous Collector Current: 31A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.8V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 1.37 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IRGB15B60KDPbF IRGS15B60KD IRGSL15B60KD ## INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE **==> picture [197 x 96] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>VCES = 600V<br>IC = 15A, TC=100°C<br>G<br>tsc > 10µs, TJ=150°C<br>E<br>n-channel VCE(on) typ. = 1.8V<br>**----- End of picture text -----**<br> ## **Features** - Low VCE (on) Non Punch Through IGBT Technology. - Low Diode VF. - 10µs Short Circuit Capability. - Square RBSOA. - Ultrasoft Diode Reverse Recovery Characteristics. - Positive VCE (on) Temperature Coefficient. - TO-220 is available in PbF as a Lead-Free ## **Benefits** - Benchmark Efficiency for Motor Control. - Rugged Transient Performance. - Low EMI. - Excellent Current Sharing in Parallel Operation. |D2Pak<br>TO-220AB<br>TO-262| |---| |IRGS15B60KD<br>IRGB15B60KDPbF<br>IRGSL15B60KD| |**Absolute Maximum Ratings**| |**Parameter**<br>**Max.**<br>**Units**<br>VCES<br>Collector-to-Emitter Voltage<br>600<br>V<br>IC@ TC= 25°C<br>Continuous Collector Current<br>31<br>IC@ TC= 100°C<br>Continuous Collector Current<br>15<br>ICM<br>Pulsed Collector Current<br>62<br>ILM<br>Clamped Inductive Load Current<br>62<br>A<br>IF@ TC= 25°C<br>Diode Continuous Forward Current<br>31<br>IF@ TC= 100°C<br>Diode Continuous Forward Current<br>15<br>IFM<br>Diode Maximum Forward Current<br>64<br>VGE<br>Gate-to-Emitter Voltage<br>± 20<br>V<br>PD@ TC= 25°C<br>Maximum Power Dissipation<br>208<br>PD@ TC= 100°C<br>Maximum Power Dissipation<br>83<br>a<br>Ceee<br>:<br>a<br>><br>o><br>lL —<br>><br>a<br>—_—[——<br>—/<br>sh|| |TJ<br>Operating Junction and<br>-55 to +150| |TSTG<br>Storage Temperature Range<br>°C| |Soldering Temperature, for 10 sec.<br>300 (0.063 in. (1.6mm) from case)<br>**Thermal Resistance**<br>es| |**Parameter**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Units**<br>RθJC<br>Junction-to-Case - IGBT<br>–––<br>–––<br>0.6<br>RθJC<br>Junction-to-Case - Diode<br>–––<br>–––<br>2.1<br>RθCS<br>Case-to-Sink, flat, greased surface<br>–––<br>0.50<br>–––<br>°C/W<br>RθJA<br>Junction-to-Ambient, typical socket mount<br>–––<br>–––<br>62<br>RθJA<br>Junction-to-Ambient (PCB Mount, steady state)<br>–––<br>–––<br>40<br>Wt<br>Weight<br>–––<br>1.44<br>–––<br>g<br>ae<br>ee<br>ee<br>a<br>—<br>ee<br>aee<br>oo<br>aes<br>esee| |www.irf.com<br>1| |09/15/04| ## IRGB15B60KDPbF/S/SL15B60KD |**Parameter**<br>ee<br>es|**Parameter**<br>ee|**Min.**<br>ee|**Typ. **<br>ee|**Max. **<br>ee|**Units**<br>ee|**Conditions**|**Ref.Fig.**| |---|---|---|---|---|---|---|---| |Qg<br>ee<br>es<br>Re|Total Gate Charge (turn-on)<br>ee|–––<br>ee|56<br>ee|84<br>ee|nC<br>ee|IC= 15A<br>VCC= 400V<br>VGE= 15V|CT1| |Qge<br>es<br>Re<br>es|Gate - Emitter Charge (turn-on)|–––|7.0|10|||| |Qgc<br>Re<br>es<br>es|Gate - Collector Charge (turn-on)<br>ee|–––<br>ee|26<br>ee|39<br>ee|||| |Eon<br>es<br>es<br>ee|Turn-On Switching Loss<br>ee|–––<br>ee|220<br>ee|330<br>ee|µJ<br>ee|IC= 15A, VCC= 400V<br>VGE= 15V,RG= 22Ω,L = 200µH<br>Ls = 150nH<br>TJ= 25°C<br>®|CT4| |Eoff<br>es<br>ee<br>ee|Turn-Off Switching Loss<br>ee<br>ee|–––<br>ee<br>ee|340<br>ee|455<br>ee|||| |Etot<br>ee<br>ee<br>ee<br>es|Total Switching Loss<br>ee<br>ee|–––<br>ee<br>ee<br>ee|560<br>ee<br>ee|785<br>ee<br>ee|||| |td(on)<br>ee<br>ee<br>es|Turn-On Delay Time<br>ee <br>ee|–––<br> ee<br>ee<br>ee|34<br>ee<br>ee|44<br>ee<br>ee|ns<br>ee|IC= 15A, VCC= 400V<br>VGE= 15V, RG= 22Ω,L = 200µH<br>Ls = 150nH, TJ= 25°C<br>®|CT4| |tr<br>ee<br>es<br>Rs|Rise Time<br>ee|–––<br>ee<br>ee|16<br>ee<br>ee|22<br>ee<br>ee|||| |td(off)<br>es<br>Rs<br>Re|Turn-Off Delay Time|–––<br>ee|184<br> ee|200<br>ee|||| |tf<br>Rs<br>Re<br>es|Fall Time|–––|20|26|||| |Eon<br>Re<br>es<br>Rs|Turn-On Switching Loss|–––|355|470|µJ|IC= 15A, VCC= 400V<br>VGE= 15V,RG= 22Ω,L = 200µH<br>Ls = 150nH<br>TJ= 150°C<br>®|CT4<br>13,15<br>WF1WF2| |Eoff<br>es<br>Rs<br>es|Turn-Off Switching Loss|–––|490|600|||| |Etot<br>Rs<br>es<br>es|Total Switching Loss|–––|835|1070|||| |td(on)<br>es<br>es<br>es|Turn-On Delay Time|–––|34|44|ns|IC= 15A, VCC= 400V<br>VGE= 15V, RG= 22Ω,L = 200µH<br>Ls = 150nH, TJ= 150°C<br>®|14, 16<br>CT4<br>WF1<br>WF2| |tr<br>es<br>es|Rise Time|–––|18|25|||| |td(off)<br>es<br>aee|Turn-Off Delay Time<br>ee|–––<br>ee|203<br>ee|226<br>ee|||| |tf<br>a<br>ee<br>Rs|Fall Time<br>a<br>ee|–––<br>a<br>ee<br>ee|28<br>a<br>ee|36<br>a<br>ee|||| |Cies<br>ee<br>Rs|Input Capacitance<br>ee|–––<br>ee<br>ee|850<br>ee|–––<br>ee|pF|VGE= 0V<br>VCC= 30V<br>f = 1.0MHz|| |Coes<br>ee<br>Rs<br>Le|Output Capacitance<br>ee<br>a|–––<br>ee<br>ee|75<br>ee|–––<br>ee|||| |Cres<br>Rs<br>Le|Reverse Transfer Capacitance<br>a|–––<br>ee|35|–––|||| |RBSOA<br>Le|Reverse Bias Safe Operting Area<br>a|FULL SQUARE||||TJ= 150°C, IC= 62A, Vp =600V<br>VCC= 500V, VGE= +15V to 0V,<br>RG= 22Ω|4<br>CT2| |SCSOA<br>Le<br>es|Short Circuit Safe Operting Area<br>a|10<br>ee|–––<br>ee|–––<br>ee|µs|TJ= 150°C, Vp =600V,RG= 22Ω<br>VCC= 360V, VGE= +15V to 0V|CT3<br>WF4| |Erec<br>a<br>es|Reverse Recovery energy of the diode<br>ee|–––<br>ee<br>ee|540<br>ee<br>ee|720<br>ee<br>ee|µJ<br>ee|TJ= 150°C<br>VCC= 400V, IF= 15A, L = 200µH<br>VGE= 15V,RG= 22Ω,Ls = 150nH|17,18,19<br>20,21<br>CT4,WF3| |trr<br>es|Diode Reverse Recovery time|–––<br>ee<br>ee|92<br>ee|111<br>ee|ns||| |Irr<br>es<br>a|Diode Peak Reverse Recovery Current<br>ee|–––<br>ee<br>ee<br>ee|29<br>ee<br>ee|33<br>ee<br>ee|A<br>ee||| Note (0) to ® are on page 15 2 www.irf.com ## IRGB15B60KDPbF/S/SL15B60KD **==> picture [208 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> 35<br>30<br>A t | tt tt<br>25<br>P ASE<br>20<br>E RNE<br>15<br>P i TT Net<br>10<br>P t Te EN [I<br>5<br>E ReeeeNe<br>0 EERE<br>0 20 40 60 80 100 120 140 160<br> TC (°C)<br>IC (A)<br>**----- End of picture text -----**<br> **==> picture [208 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> 240<br>200<br>N ER<br>160 A NS<br>120 TT NTT<br>80 TPN<br>x<br>40<br>ttt IN<br>PPE TN<br>0<br>0 20 40 60 80 100 120 140 160<br> TC (°C)<br>Ptot (W)<br>**----- End of picture text -----**<br> **Fig. 1** - Maximum DC Collector Current vs. Case Temperature **Fig. 2** - Power Dissipation vs. Case Temperature **==> picture [206 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10 µs<br>10<br>100 µs<br>1<br>1ms<br>DC<br>0.1<br>CIE DI CTR Ci<br>1 10 100 1000 10000<br> VCE (V)<br>IC (A)<br>**----- End of picture text -----**<br> **==> picture [208 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10<br>1<br>0 PIP CT<br>10 100 1000<br>VCE (V)<br>IC A)<br>**----- End of picture text -----**<br> **Fig. 3** - Forward SOA TC = 25°C; TJ ≤ 150°C **Fig. 4** - Reverse Bias SOA TJ = 150°C; VGE =15V www.irf.com 3 ## IRGB15B60KDPbF/S/SL15B60KD **==> picture [196 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>90 VGE = 18V —_ AVL<br>80 VGE = 15V NTT<br>VGE = 12V<br>70 VGE = 10V SQY/7<br>VGE = 8.0V<br>60<br>50 T T I WLNR<br>40 T _T<br>30 T WN<br>20 n n Aen<br>a<br>10<br>T AT<br>0<br>0 1 2 3 4 5 6<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br> **==> picture [197 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>90 VGE = 18V _ TIAA<br>80 VGE = 15V NT<br>VGE = 12V<br>70 VGE = 10V Nw/Ans<br>VGE = 8.0V<br>60<br>50 P INSXWKZ<br>40 P RR<br>30 T _T. [f7Rr_f_]<br>20 Y e<br>a Za<br>10<br>T A<br>0<br>0 1 2 3 4 5 6<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br> **Fig. 5** - Typ. IGBT Output Characteristics TJ = -40°C; tp = 300µs **Fig. 6** - Typ. IGBT Output Characteristics TJ = 25°C; tp = 300µs **==> picture [197 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>90 VGE = 18V T_T]<br>80 VGE = 15V NE_L_IA<br>VGE = 12V<br>70 VGE = 10V Nae<br>VGE = 8.0V<br>60<br>SAR<br>50 B EEN 7424<br>40 > ) 2<br>30 r o OPPS TI<br>20<br>10 e y 26<br>> _<<br>0<br>0 1 2 3 4 5 6<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br> **==> picture [209 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> 60<br>-40°C 7<br>25°C<br>50<br>40 Z|L z 150°C yfE|<br>30<br>20<br>|<br>10<br>e e ee<br>0 Al<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br> VF (V)<br>IF (A)<br>**----- End of picture text -----**<br> **Fig. 7** - Typ. IGBT Output Characteristics TJ = 150°C; tp = 300µs **Fig. 8** - Typ. Diode Forward Characteristics tp = 80µs www.irf.com 4 ## IRGB15B60KDPbF/S/SL15B60KD **==> picture [209 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>T TT<br>18<br>T T ee<br>16<br>14 T ee<br>12 T PT I ICE = 5.0A |<br>10 n ies ICE = 15A |<br>8 m ines ICE = 30A |<br>6 n de ce rtd<br>4 T re<br>2 P e<br>><br>0<br>4 6 8 10 12 14 16 18 20<br> VGE (V)<br>VCE (V)<br>**----- End of picture text -----**<br> **==> picture [208 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>T TI.<br>18<br>P TT<br>16<br>14 P TT<br>12 r T ICE = 5.0A _<br>10 m innie ICE = 15A _<br>8 e ee, ICE = 30A _<br>6 4 2s ec<br>4 id<br>2 P TAA<br>( yee<br>0<br>4 6 8 10 12 14 16 18 20<br> VGE (V)<br>VCE (V)<br>**----- End of picture text -----**<br> **Fig. 9** - Typical VCE vs. VGE TJ = -40°C **Fig. 10** - Typical VCE vs. VGE TJ = 25°C **==> picture [427 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> 20 160<br>18 T TI. T T = 25°C a<br>140 J<br>16 TJ = 150°C<br>P T itt | tt 120 P | NO<br>14<br>12 oT Ts ICE = 5.0A | 100 a Y<br>10 m ales ICE = 15A = 80 e e<br>8 m ines ICE = 30A ae<br>60<br>| | e ee Ane<br>6 tye| 40 Ann<br>4 TJ = 150°C<br>2 fen ee eee r, 20 Y TJ = 25°C<br>0 ee 0 fe -<br>4 6 8 10 12 14 16 18 20 0 5 10 15 20<br> VGE (V) VGE (V)<br>VCE (V) ICE (A)<br>**----- End of picture text -----**<br> **Fig. 11** - Typical VCE vs. VGE TJ = 150°C **Fig. 12** - Typ. Transfer Characteristics VCE = 50V; tp = 10µs www.irf.com 5 ## IRGB15B60KDPbF/S/SL15B60KD **==> picture [432 x 198] intentionally omitted <==** **----- Start of picture text -----**<br> 1800 1000<br>1600<br>1400 H A/ F es ee esEee ee<br>tdOFF<br>1200 7 A P y<br>E<br>OFF<br>1000<br>+ ff EON | 100 P | || ft<br>800<br>600 7 / 4 — ————<br>td<br>ON<br>400 a n a e<br>200 A A tF rs |<br>0 a 10 tR “|| | |<br>0 10 20 30 40 50<br>0 10 20 30 40 50<br> IC (A)<br>IC (A)<br>Swiching Time (ns)<br>Energy (µJ)<br>**----- End of picture text -----**<br> **Fig. 13** - Typ. Energy Loss vs. IC TJ = 150°C; L=200µH; VCE= 400V RG= 22Ω; VGE= 15V **Fig. 14** - Typ. Switching Time vs. IC TJ = 150°C; L=200µH; VCE= 400V RG= 22Ω; VGE= 15V **==> picture [435 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> 900 1000<br>td<br>OFF<br>800 [ sd — — =<br>E<br>OFF<br>700 a a a o<br>600 EON<br>500<br>FE |<br>100<br>400 tdON<br>300 a — — tR<br>200 tF<br>100 e e ee ea<br>0 e e 10 ~~ | |<br>0 50 100 150 0 50 100 150<br>RG (Ω) RG (Ω)<br>Swiching Time (ns)<br>Energy (µJ)<br>**----- End of picture text -----**<br> **Fig. 15** - Typ. Energy Loss vs. RG TJ = 150°C; L=200µH; VCE= 400V ICE= 15A; VGE= 15V **Fig. 16** - Typ. Switching Time vs. RG TJ = 150°C; L=200µH; VCE= 600V ICE= 15A; VGE= 15V www.irf.com 6 ## IRGB15B60KDPbF/S/SL15B60KD **==> picture [433 x 198] intentionally omitted <==** **----- Start of picture text -----**<br> 35 40<br>RG = 10 Ω<br>35<br>30 - T T [TTT]<br>30<br>RG = 22 Ω<br>25<br>[™ 25 P N ff fF ff<br>RG = 47 Ω<br>20 20<br>RG = 68 Ω<br>o —S 15 A SSES<br>15 | 6 E E<br>RG = 100 Ω 10<br>10 Py Pe<br>5<br>—f fTtTe]lUC UP MfEtf ftEff<br>5 | | |) 0 6 E RT<br>0 10 20 30 40 50 0 20 40 60 80 100 120<br>IF (A) RG (Ω)<br>IRR (A) IRR (A)<br>**----- End of picture text -----**<br> **Fig. 17** - Typical Diode IRR vs. IF TJ = 150°C **Fig. 18** - Typical Diode IRR vs. RG TJ = 150°C; IF = 15A **==> picture [437 x 198] intentionally omitted <==** **----- Start of picture text -----**<br> 35 3000<br> 10Ω 40A<br>22Ω<br>30 2500 47Ω 30A<br>68 Ω<br>25<br>Z 2000 1 00 Ω o a<br>15A<br>20<br>a a<br>1500<br>10A<br>15<br>1000<br>e a | wet<br>10<br>500<br>5 — ———— | ft<br>o r 0 Ft<br>0<br>0 500 1000 1500<br>0 500 1000 1500<br>diF /dt (A/µs)<br>diF /dt (A/µs)<br>IRR (A) QRR (µC)<br>**----- End of picture text -----**<br> **Fig. 19** - Typical Diode IRR vs. diF/dt VCC= 400V; VGE= 15V; ICE= 15A; TJ = 150°C **Fig. 20** - Typical Diode QRR VCC= 400V; VGE= 15V;TJ = 150°C www.irf.com 7 ## IRGB15B60KDPbF/S/SL15B60KD **==> picture [210 x 197] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>900 10Ω<br>—a E e<br>800<br>700 P asa 22 Ω<br>600<br>47 Ω<br>500<br>100 Ω<br>400300200 eaae a eee<br>100<br>0 e e ee ee ee<br>0 10 20 30 40<br>IF (A)<br>Energy (µJ)<br>**----- End of picture text -----**<br> **Fig. 21** - Typical Diode ERR vs. IF TJ = 150°C **==> picture [435 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> 10000 16<br>14<br>300V<br>12<br>400V<br>Cies<br>1000 mw | ft | 10 a Ae<br>8<br>ee ee 6 a e eee<br>100<br>Coes 4<br>ee<br>SS Cres 2<br>ee — ee e e<br>0<br>10 ee ae l 7Po<br>0 20 40 60<br>0 20 40 60 80 100<br>Q G, Total Gate Charge (nC)<br>VCE (V)<br>Capacitance (pF)<br>VGE (V)<br>**----- End of picture text -----**<br> **Fig. 22** - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz **Fig. 23** - Typical Gate Charge vs. VGE ICE = 15A; L = 600µH www.irf.com 8 ## IRGB15B60KDPbF/S/SL15B60KD **==> picture [440 x 487] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>ee ee een<br>e D = 0 .5 0 rrr a ti<br>0.20 HH e B HTH TH R<br>0.1 e t IEE<br>0.10 R1 R1 R2 R2 R3R3 Ri (°C/W) τi (sec)<br>p 0.05 A τJ τJ a LL Lt τCτ 0.231 0.000157 |<br>0.010.02 τ1τ1 τ2 τ2 τ3τ3 0.175 0.000849<br>0.01 oaeE eye Aec SINGLE PULSE Qaatl|l eeeall H Ci= T Ciτi/Rii/ || Ri EET T Notes: -—aWee 0.201 0.011943 HHLAE||<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>o p I IE LL<br>2. Peak Tj = P dm x Zthjc + Tc<br>TTI Ee CEC<br>0.001<br>1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)<br>10<br>eA ee | Oe REEmnAII<br>1 D = 0.50<br>0.20<br>|A 0. 10 Sn | em a een a a ee R1 R1 R2 R2 Ri (°C/W) τi (sec)<br>0.1 0 .0 5 τJ τJ τCτ 1.164 0.000939<br>0.010.02 τ1 τ1 τ2τ2 0.9645 0.035846<br>Str ee LLL Ci= τi/Ri r |<br>Ci i/Ri<br>0.01<br>Notes:<br>SINGLE PULSE 1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc<br>AGail CT —EHE-E F EA |<br>0.001<br>1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0<br>t1 , Rectangular Pulse Duration (sec)<br> thJC )<br>Thermal Response ( Z<br> thJC )<br>Thermal Response ( Z<br>**----- End of picture text -----**<br> **Fig 25.** Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 9 ## IRGB15B60KDPbF/S/SL15B60KD **==> picture [408 x 86] intentionally omitted <==** **----- Start of picture text -----**<br> L<br>L<br>DUT VCC 80 V + DUT<br>0 - 480V<br>1K Rg<br>**----- End of picture text -----**<br> **Fig.C.T.1** - Gate Charge Circuit (turn-off) **Fig.C.T.2** - RBSOA Circuit **==> picture [86 x 65] intentionally omitted <==** **----- Start of picture text -----**<br> Driver<br>DC 360V<br>DUT<br>**----- End of picture text -----**<br> **==> picture [166 x 84] intentionally omitted <==** **----- Start of picture text -----**<br> diode clamp /<br>DUT<br>L<br>“<br>- 5V<br>DUT /<br>DRIVER VCC<br>Rg<br>**----- End of picture text -----**<br> **Fig.C.T.3** - S.C.SOA Circuit **Fig.C.T.4** - Switching Loss Circuit **==> picture [137 x 86] intentionally omitted <==** **----- Start of picture text -----**<br> VCC<br>R =<br>ICM<br>DUT VCC<br>Rg<br>**----- End of picture text -----**<br> **Fig.C.T.5** - Resistive Load Circuit www.irf.com 10 ## IRGB15B60KDPbF/S/SL15B60KD **==> picture [208 x 506] intentionally omitted <==** **----- Start of picture text -----**<br> 600 30<br>t F<br>500 25<br>400 fe 20<br>90% IC E<br>300 oo 15<br>5% IC E<br>200 om 10<br>5% V C E<br>100 5<br>yo<br>0 0<br>E o ff L o s s<br>-100 cee -5<br>-0.5 0.0 0.5 1.0 1.5<br>t (µS )<br>WF.1- Typ. Turn-off Loss<br>@ TJ = 150°C using CT.4<br>100 20<br>Q R R<br>0 10<br>t R R<br>-100 MWe 0<br>10 %<br>-200 Pe ak -10<br>Pe a k IR R<br>IR R<br>-300 Wyivan -20<br>-400 -30<br>Wee<br>-500 Mw -40<br>-0.06 0.04 0.14<br>t (µS )<br> (V) (A)<br>VCE ICE<br> (V) (A)<br>VCE ICE<br>**----- End of picture text -----**<br> WF.3- Typ. Reverse Recovery @ TJ = 150°C using CT.4 **==> picture [203 x 503] intentionally omitted <==** **----- Start of picture text -----**<br> 500 50<br>400 40<br>oN<br>300 30<br>90% test current<br>Tf<br>200 20<br> test current<br>100 10<br>tR 10% test current<br>5% V CE<br>0 sa 0<br>Eon Loss<br>-100 -10<br>-0.2 -0.1 0.0 0.1<br>t (µS)<br>WF.2- Typ. Turn-on Loss<br>@ TJ = 150°C using Fig. CT.4<br>5 0 0 2 50<br>4 0 0 V C E 2 00<br>3 0 0 1 50<br>ae<br>IC E<br>2 0 0 KR 1 00<br>1 0 0 ef]—>-+— 5 0<br>0 0<br>LI<br>-1 0 0 ee -5 0<br>-1 0 0 1 0 2 0 3 0<br>t (µS )<br> (V) (A)<br>VCE ICE<br> (V) (A)<br>VCE ICE<br>**----- End of picture text -----**<br> WF.4- Typ. Short Circuit @ TJ = 150°C using CT.3 www.irf.com 11 ## IRGB15B60KDPbF/S/SL15B60KD Dimensions are shown in millimeters (inches) **==> picture [377 x 190] intentionally omitted <==** **----- Start of picture text -----**<br> 10.54 (.415) 3.78 (.149) - B -<br>2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)<br>2.62 (.103) - A - 4.20 (.165) 1.32 (.052)<br>7 g 1.22 (.048)<br>6.47 (.255)<br>4 6.10 (.240)<br>ar y ED aa<br>15.24 (.600)<br>14.84 (.584)<br>LEAD ASSIGNMENTS<br>1.15 (.045) LEAD ASSIGNMENTS<br> MIN HEXFET 1 - GATE IGBTs, CoPACK<br>| 1 2 3 | 1- GATE 2 - DRAIN 1- GATE<br>2- DRAIN 3 - SOURCE 2- COLLECTOR<br>3- SOURCE 4 - DRAIN 3- EMITTER<br>4- DRAIN 4- COLLECTOR<br>14.09 (.555)<br>13.47 (.530) 4.06 (.160)<br>3.55 (.140)<br>| IF<br>3X [1.40 (.055)] 3X [0.93 (.037)] 0.69 (.027) 3X [0.55 (.022)] 0.46 (.018)<br>1.15 (.045) 0.36 (.014) M B A M 2.92 (.115)<br>T<br>2.64 (.104)<br>ee 2.54 (.100) ; ~<br>2X<br>**----- End of picture text -----**<br> NOTES: - 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. - 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. E XAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN T HE AS S E MBLY LINE "C" **Note:** "P" in assembly line position indicates "Lead-Free" **==> picture [219 x 73] intentionally omitted <==** **----- Start of picture text -----**<br> PART NUMBER<br>INTE RNAT IONAL<br>RE CT IFIER<br>LOGO<br>17 89 DAT E CODE<br>YEAR 7 = 1997<br>AS S EMBLY<br>LOT CODE WEE K 19<br>LINE C<br>**----- End of picture text -----**<br> www.irf.com 12 ## IRGB15B60KDPbF/S/SL15B60KD **==> picture [187 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> Dimensions are shown in millimeters (inches)<br>**----- End of picture text -----**<br> **==> picture [244 x 146] intentionally omitted <==** **----- Start of picture text -----**<br> THIS IS AN IRF530S WITH PART NUMBER<br>LOT CODE 8024AS S EMBLED ON WW 02, 2000 INT ERNATIONALRECTIFIER a F530S |<br>IN THE AS S EMBLY LINE "L" LOGO Ie3R 002.<br>Note: "P" in assembly linepos ition indicates "Lead-Free" ASS EMBLYLOT CODE 80 WT GOoT, U 24 DATE CODEYEAR 0 = 2000WEEK 02LINE L<br>PART NUMBER<br>INT ERNAT IONALRE CT IF IER a F 530S |<br>LOGO TeaRP002A)<br>80 24 DAT E CODE<br>ASSE MBLYLOT CODE WUGG H 64 YEAR 0 =P = DESIGNAT ES LEAD-FREEPRODUCT (OPT IONAL) 2000<br>WEE K 02<br>A = ASSE MBLY S ITE CODE<br>**----- End of picture text -----**<br> **==> picture [60 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> www.irf.com<br>**----- End of picture text -----**<br> 13 ## IRGB15B60KDPbF/S/SL15B60KD ## TO-262 Package Outline ## Dimensions are shown in millimeters (inches) ## TO-262 Part Marking Information **==> picture [301 x 163] intentionally omitted <==** **----- Start of picture text -----**<br> EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>AS S E MBLED ON WW 19, 1997IN THE AS S EMBLY LINE "C" INTERNATIONALRECTIFIERLOGO cSIORIRL3103L719¢<br>Note: "P" in assembly line 17 89 DAT E CODE<br>position indicates "Lead-Free" AS S EMBLY YE AR 7 = 1997<br>LOT CODE WEEK 19<br>LINE C<br>OR<br>PART NUMBER<br>INTERNATIONAL |<br>RECTIFIER IRL3103L<br>LOGO TeaRP719A<br>DATE CODE<br>17 89<br>P = DES IGNATE S LEAD-FREE<br>AS S EMBLY PRODUCT (OPTIONAL)<br>LOT CODE YEAR 7 = 1997<br>WEE K 19<br>A = AS S EMBLY S ITE CODE<br>**----- End of picture text -----**<br> www.irf.com 14 ## IRGB15B60KDPbF/S/SL15B60KD Dimensions are shown in millimeters (inches) **==> picture [270 x 290] intentionally omitted <==** **----- Start of picture text -----**<br> TRR<br>1.60 (.063)<br>1.50 (.059)<br>4.10 (.161)3.90 (.153) 1.60 (.063)1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457) 1,<br>1.65 (.065) 11.40 (.449) 15.42 (.609)15.22 (.601) 24.30 (.957)23.90 (.941)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>° 12.80 (.504) 23.90 (.941) _ 4 dp<br>330.00 60.00 (2.362)<br>(14.173) MIN.<br> MAX.<br>| F<br>NOTES : TT iL 30.40 (1.197) MAX.<br>1. COMFORMS TO EIA-418.2. CONTROLLING DIMENSION: MILLIMETER. 26.40 (1.039)24.40 (.961) I 4<br>3. DIMENSION MEASURED @ HUB. 3<br>5 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.<br>**----- End of picture text -----**<br> ## Notes: ® This is only applied to TO-220AB package 0) This is applied to D[2] Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. 6) Energy losses include "tail" and diode reverse recovery. ® VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 22Ω. TO-220 package is not recommended for Surface Mount Application Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. **IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/04 www.irf.com 15
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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